Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516031
M. Fukuzawa, R. Kashiwagi, M. Yamada
Strain-induced birefringence has been observed in bulk c-plane GaN substrates. Two-dimensional distribution of index ellipse difference |Δn| revealed a variety of distribution such as gradual U-shape distribution with rotational symmetry and chord- and spot-like patterns with three- and/or six-fold symmetries reflecting the whole manufacturing process of substrates. Although the absolute value of the strain is not obtained yet, because of unknown photoelastic constants, the |Δn| map is useful for qualitative evaluation of strain distribution over the whole substrate.
{"title":"Observation of birefringence distribution caused by residual strain in bulk c-plane GaN substrates","authors":"M. Fukuzawa, R. Kashiwagi, M. Yamada","doi":"10.1109/ICIPRM.2010.5516031","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516031","url":null,"abstract":"Strain-induced birefringence has been observed in bulk c-plane GaN substrates. Two-dimensional distribution of index ellipse difference |Δn| revealed a variety of distribution such as gradual U-shape distribution with rotational symmetry and chord- and spot-like patterns with three- and/or six-fold symmetries reflecting the whole manufacturing process of substrates. Although the absolute value of the strain is not obtained yet, because of unknown photoelastic constants, the |Δn| map is useful for qualitative evaluation of strain distribution over the whole substrate.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"3 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122209128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5515934
Y. Hayakawa
The paper describes microgravity experiment using Chinese recovery satellite and the in-situ measurement of composition profile in the solution by X-ray penetration method to make clear the effect of gravity on the growth of InGaSb ternary alloy semiconductor crystals.
{"title":"Effect of gravity on the growth of ternary alloy semiconductor bulk crystals","authors":"Y. Hayakawa","doi":"10.1109/ICIPRM.2010.5515934","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5515934","url":null,"abstract":"The paper describes microgravity experiment using Chinese recovery satellite and the in-situ measurement of composition profile in the solution by X-ray penetration method to make clear the effect of gravity on the growth of InGaSb ternary alloy semiconductor crystals.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123174542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516184
Y. Chou, D. Leung, M. Biedenbender, D. Eng, D. Buttari, X. Mei, C. H. Lin, R. Tsai, R. Lai, M. Barsky, M. Wojtowicz, A. Oki, T. Block
Accelerated temperature lifetesting at Tchannel of 240, 255, and 270 °C was performed on 0.1-μm Pt-sunken InP HEMT low-noise amplifiers fabricated on 100 mm InP substrates. The reliability performance was evaluated based on ΔS21 < −1 dB at 35 GHz. The lifetesting results exhibit activation energy of approximately 1.8 eV and lifetime projection of 99% reliability and 90% confidence exceeds 1×108 hours at Tchannel of 125 °C. The high reliability demonstration of 0.1-μm Pt-sunken gate InP HEMT low-noise amplifiers on 100 mm InP substrates is essential for advanced military/space applications requiring high reliability performance.
{"title":"High reliability performance of 0.1-μm Pt-sunken gate InP HEMT low-noise amplifiers on 100 mm InP substrates","authors":"Y. Chou, D. Leung, M. Biedenbender, D. Eng, D. Buttari, X. Mei, C. H. Lin, R. Tsai, R. Lai, M. Barsky, M. Wojtowicz, A. Oki, T. Block","doi":"10.1109/ICIPRM.2010.5516184","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516184","url":null,"abstract":"Accelerated temperature lifetesting at T<inf>channel</inf> of 240, 255, and 270 °C was performed on 0.1-μm Pt-sunken InP HEMT low-noise amplifiers fabricated on 100 mm InP substrates. The reliability performance was evaluated based on ΔS21 < −1 dB at 35 GHz. The lifetesting results exhibit activation energy of approximately 1.8 eV and lifetime projection of 99% reliability and 90% confidence exceeds 1×10<sup>8</sup> hours at T<inf>channel</inf> of 125 °C. The high reliability demonstration of 0.1-μm Pt-sunken gate InP HEMT low-noise amplifiers on 100 mm InP substrates is essential for advanced military/space applications requiring high reliability performance.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126440937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516410
H. Rodilla, T. González, M. Malmkvist, E. Lefebvre, G. Moschetti, J. Grahn, J. Mateos
In this work we present a Monte Carlo study of the influence of the presence of a native oxide which isolates the gate in InAs/AlSb high electron mobility transistors (HEMTs) on their dc and ac performance. A good agreement between simulations and experimental results of I-V curves and small signal equivalent circuit parameters has been found for low VDS, where impact ionization is not of importance. The comparison between intrinsic MC simulation results for isolated-gate and Schottky-gate HEMTs reveals a strong influence of the native oxide on the dynamic behavior of the devices, mainly on Cgs, gm and fc.
{"title":"Isolated-gate InAs/AlSb HEMTs: A Monte Carlo study","authors":"H. Rodilla, T. González, M. Malmkvist, E. Lefebvre, G. Moschetti, J. Grahn, J. Mateos","doi":"10.1109/ICIPRM.2010.5516410","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516410","url":null,"abstract":"In this work we present a Monte Carlo study of the influence of the presence of a native oxide which isolates the gate in InAs/AlSb high electron mobility transistors (HEMTs) on their dc and ac performance. A good agreement between simulations and experimental results of I-V curves and small signal equivalent circuit parameters has been found for low VDS, where impact ionization is not of importance. The comparison between intrinsic MC simulation results for isolated-gate and Schottky-gate HEMTs reveals a strong influence of the native oxide on the dynamic behavior of the devices, mainly on Cgs, gm and fc.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130574868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516365
K. Maezawa, Koji Kasahara, M. Mori
This paper proposes a traveling wave amplifier based on composite right/left handed (CRLH) transmission lines (TLs) periodically loaded with resonant tunneling diode (RTD) pairs. This TL can be regarded as a “lossy” TL with a negative loss because of the negative differential resistance of the RTD. This means that the TL can amplify signals while the signal travels along the line. One of the most important points to be investigated to realize this amplifier is the stability of the circuit. We discuss stability of the TLs periodically loaded with RTDs, and show that they can be stabilized by using CRLH TL configuration. It is demonstrated that this amplifier can have a gain for wide frequency range.
{"title":"A traveling wave amplifier based on composite right/left handed (CRLH) transmission lines periodically loaded with resonant tunneling diode pairs","authors":"K. Maezawa, Koji Kasahara, M. Mori","doi":"10.1109/ICIPRM.2010.5516365","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516365","url":null,"abstract":"This paper proposes a traveling wave amplifier based on composite right/left handed (CRLH) transmission lines (TLs) periodically loaded with resonant tunneling diode (RTD) pairs. This TL can be regarded as a “lossy” TL with a negative loss because of the negative differential resistance of the RTD. This means that the TL can amplify signals while the signal travels along the line. One of the most important points to be investigated to realize this amplifier is the stability of the circuit. We discuss stability of the TLs periodically loaded with RTDs, and show that they can be stabilized by using CRLH TL configuration. It is demonstrated that this amplifier can have a gain for wide frequency range.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129797997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516023
H. Nishino, I. Kawahira, F. Machida, S. Hara, H. Fujishiro
We calculate the unstrained and the strained band structures of InAs and InSb by means of the empirical pseudopotential method. The impact ionization threshold energy, Eth, is calculated while keeping the energy and momentum conservation. Then the electron transport in the unstrained and the strained InAs and InSb is investigated by using the Monte Carlo (MC) method. In both InAs and InSb, the average electron velocity, vd, increases monotonically with the electric field strength, f. The tensile strain makes the low field electron mobility, μ, higher, and vice versa, which is resulted from the dependence of the effective mass in the Γ valley, m||∗(Γ), on the strain. At the high f, many electrons are restricted within the bottom of the Γ valley because of losing most of their energy by the impact ionization, which results in keeping vd large at the high f. The tensile strain makes Eth smaller and then the impact ionization coefficient, α, larger, and vice versa. Consequently, vd at the high f becomes larger under the tensile strain and smaller under the compressive strain.
{"title":"Monte Carlo study of strain effect on high field electron transport in InAs and InSb","authors":"H. Nishino, I. Kawahira, F. Machida, S. Hara, H. Fujishiro","doi":"10.1109/ICIPRM.2010.5516023","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516023","url":null,"abstract":"We calculate the unstrained and the strained band structures of InAs and InSb by means of the empirical pseudopotential method. The impact ionization threshold energy, Eth, is calculated while keeping the energy and momentum conservation. Then the electron transport in the unstrained and the strained InAs and InSb is investigated by using the Monte Carlo (MC) method. In both InAs and InSb, the average electron velocity, vd, increases monotonically with the electric field strength, f. The tensile strain makes the low field electron mobility, μ, higher, and vice versa, which is resulted from the dependence of the effective mass in the Γ valley, m||∗(Γ), on the strain. At the high f, many electrons are restricted within the bottom of the Γ valley because of losing most of their energy by the impact ionization, which results in keeping vd large at the high f. The tensile strain makes Eth smaller and then the impact ionization coefficient, α, larger, and vice versa. Consequently, vd at the high f becomes larger under the tensile strain and smaller under the compressive strain.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125755674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516209
T. Ohno, K. Yoshino, Y. Muramoto, K. Sano, S. Kodama, N. Shigekawa
We fabricated 25-Gbit/s receiver optical subassemblies (ROSAs) using a maximized-induced-current photodiode (MIC-PD). By employing a high-speed and high-responsivity MIC-PD, we achieved successful operation at 25 Gbit/s using a flexible printed circuit board and a coaxial package designed for a 10-Gbit/s ROSA.
{"title":"25-Gbit/s receiver optical subassembly using maximized-induced-current photodiode","authors":"T. Ohno, K. Yoshino, Y. Muramoto, K. Sano, S. Kodama, N. Shigekawa","doi":"10.1109/ICIPRM.2010.5516209","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516209","url":null,"abstract":"We fabricated 25-Gbit/s receiver optical subassemblies (ROSAs) using a maximized-induced-current photodiode (MIC-PD). By employing a high-speed and high-responsivity MIC-PD, we achieved successful operation at 25 Gbit/s using a flexible printed circuit board and a coaxial package designed for a 10-Gbit/s ROSA.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132464110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516052
C. Junesand, W. Metaferia, F. Olsson, M. Avella, J. Jiménez, G. Pozina, L. Hultman, S. Lourdudoss
We investigate nano-eptiaxial lateral overgrowth (NELOG) of InP from the nano-sized openings on a seed layer on the silicon wafer, by Hydride Vapor Phase Epitaxy (HVPE). The grown layers were analyzed by cathodoluminescence (CL) in situ a scanning electron microscope (SEM) and transmission electron microscopy (TEM). The results from InP:S growth shows that the boundary plane of the grown layer has a major impact on the luminescence, indicating preferential orientation-dependent doping. Moreover, although there is clear evidence that most of the threading dislocations originating in the InP seed layer/Si interface are blocked by the mask, it appears that new dislocations are generated. Some of these dislocations are bounding planar defects such as stacking faults, possibly generated by unevenness in the mask. Finally, patterns where coalescence takes place at higher thickness seem to result in a rougher surface.
{"title":"Heteroepitaxial growth of Indium phosphide from nano-openings made by masking on a Si(001) wafer","authors":"C. Junesand, W. Metaferia, F. Olsson, M. Avella, J. Jiménez, G. Pozina, L. Hultman, S. Lourdudoss","doi":"10.1109/ICIPRM.2010.5516052","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516052","url":null,"abstract":"We investigate nano-eptiaxial lateral overgrowth (NELOG) of InP from the nano-sized openings on a seed layer on the silicon wafer, by Hydride Vapor Phase Epitaxy (HVPE). The grown layers were analyzed by cathodoluminescence (CL) in situ a scanning electron microscope (SEM) and transmission electron microscopy (TEM). The results from InP:S growth shows that the boundary plane of the grown layer has a major impact on the luminescence, indicating preferential orientation-dependent doping. Moreover, although there is clear evidence that most of the threading dislocations originating in the InP seed layer/Si interface are blocked by the mask, it appears that new dislocations are generated. Some of these dislocations are bounding planar defects such as stacking faults, possibly generated by unevenness in the mask. Finally, patterns where coalescence takes place at higher thickness seem to result in a rougher surface.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"269 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134174419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516188
A. Alt, O. Ostinelli, C. Bolognesi
Al-free HEMTs show advantageous characteristics in terms of LF-noise, low-temperature performance, breakdown behavior, high-frequency power performance as well as reliability [1]. In the present work, we report the technology and performance of 100 nm gate length Al-free GaInP/GaInAs pseudomorphic HEMTs grown by MOVPE on semi-insulating InP substrates. The epitaxial layer structure involves an In-rich channel achieving room temperature mobilities of 8,300 cm2/Vs. The fabrication of 100 nm T-Gate HEMTs gives rise to the highest reported fT = 256 GHz and fMAX = 360 GHz for Al-free GaInP/GaInAs InP pHEMTs. DC characterization yields shows saturation currents < 400 mA/mm and a maximum transconductance of 640 mS/mm.
{"title":"Aluminum-free GaInP/GaInAs pHEMTs for low-noise applications with peak fT = 256 GHz and peak fMAX = 360 GHz","authors":"A. Alt, O. Ostinelli, C. Bolognesi","doi":"10.1109/ICIPRM.2010.5516188","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516188","url":null,"abstract":"Al-free HEMTs show advantageous characteristics in terms of LF-noise, low-temperature performance, breakdown behavior, high-frequency power performance as well as reliability [1]. In the present work, we report the technology and performance of 100 nm gate length Al-free GaInP/GaInAs pseudomorphic HEMTs grown by MOVPE on semi-insulating InP substrates. The epitaxial layer structure involves an In-rich channel achieving room temperature mobilities of 8,300 cm2/Vs. The fabrication of 100 nm T-Gate HEMTs gives rise to the highest reported fT = 256 GHz and fMAX = 360 GHz for Al-free GaInP/GaInAs InP pHEMTs. DC characterization yields shows saturation currents < 400 mA/mm and a maximum transconductance of 640 mS/mm.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"342 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133179179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516088
S. A. Sayid, I. Marko, P. Cannard, Xin Chen, L. Rivers, I. Lealman, S. Sweeney
We have investigated the threshold current Ith and differential quantum efficiency as the function of temperature in InGaAlAs/InP multiple quantum well (MQWs) buried heterostructure (BH) lasers. We find that the temperature sensitivity of Ith is due to non-radiative recombination which accounts for up to ~80% of Jth at room temperature. Analysis of spontaneous emission emitted from the devices show that the dominant non-radiative recombination process is consistent with Auger recombination. We further show that the above threshold differential internal quantum efficiency, ηi, is ~80% at 20°C remaining stable up to 80°C. In contrast, the internal optical loss, αi, increases from 15 cm−1 at 20°C to 22 cm−1 at 80°C, consistent with inter-valence band absorption (IVBA). This suggests that the decrease in power output at elevated temperatures is associated with both Auger recombination and IVBA.
{"title":"Thermal performance of 1.55μm InGaAlAs quantum well buried heterostructure lasers","authors":"S. A. Sayid, I. Marko, P. Cannard, Xin Chen, L. Rivers, I. Lealman, S. Sweeney","doi":"10.1109/ICIPRM.2010.5516088","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516088","url":null,"abstract":"We have investigated the threshold current I<inf>th</inf> and differential quantum efficiency as the function of temperature in InGaAlAs/InP multiple quantum well (MQWs) buried heterostructure (BH) lasers. We find that the temperature sensitivity of I<inf>th</inf> is due to non-radiative recombination which accounts for up to ~80% of J<inf>th</inf> at room temperature. Analysis of spontaneous emission emitted from the devices show that the dominant non-radiative recombination process is consistent with Auger recombination. We further show that the above threshold differential internal quantum efficiency, ηi, is ~80% at 20°C remaining stable up to 80°C. In contrast, the internal optical loss, α<inf>i</inf>, increases from 15 cm<sup>−1</sup> at 20°C to 22 cm<sup>−1</sup> at 80°C, consistent with inter-valence band absorption (IVBA). This suggests that the decrease in power output at elevated temperatures is associated with both Auger recombination and IVBA.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114148195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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