Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516406
Wei-Zhi He, Heng-Kuang Lin, P. Chiu, J. Chyi, C. Ko, T. Kuan, Meng-Kuei Hsieh, Wen-Chin Lee, C. Wann
In this work, N+-InGaAs/InAlAs recessed gates for InAs/AlSb HFET development are presented. Highly doped N+-InGaAs cap layers are used to decrease the parasitic resistances in contact and access regions. As-grown modulation-doped epitaxy materials exhibit a Hall mobility of 14,200 cm2/V s and a sheet density of 6.15 ×1012 cm−2, while a mobility of 14,600 cm2/V s and a sheet density of 5.61×1012 cm−2 are shown after removal of the N+-InGaAs cap. Benefiting the energy band lowering using the highly doped cap layers, a low contact resistance of 0.06 Ω-mm is achieved. DC performances of IDSS=862mA/mm and gm, peak=927mS/mm and RF performances of fT=24GHz and fmax=51GHz are demonstrated in a 2.1μm-gate-length device. An fT-Lg product is as high as 51 GH-μm.
{"title":"N+-InGaAs/InAlAs recessed gates for InAs/AlSb HFET development","authors":"Wei-Zhi He, Heng-Kuang Lin, P. Chiu, J. Chyi, C. Ko, T. Kuan, Meng-Kuei Hsieh, Wen-Chin Lee, C. Wann","doi":"10.1109/ICIPRM.2010.5516406","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516406","url":null,"abstract":"In this work, N<sup>+</sup>-InGaAs/InAlAs recessed gates for InAs/AlSb HFET development are presented. Highly doped N<sup>+</sup>-InGaAs cap layers are used to decrease the parasitic resistances in contact and access regions. As-grown modulation-doped epitaxy materials exhibit a Hall mobility of 14,200 cm<sup>2</sup>/V s and a sheet density of 6.15 ×10<sup>12</sup> cm<sup>−2</sup>, while a mobility of 14,600 cm<sup>2</sup>/V s and a sheet density of 5.61×10<sup>12</sup> cm<sup>−2</sup> are shown after removal of the N<sup>+</sup>-InGaAs cap. Benefiting the energy band lowering using the highly doped cap layers, a low contact resistance of 0.06 Ω-mm is achieved. DC performances of I<inf>DSS</inf>=862mA/mm and g<inf>m, peak</inf>=927mS/mm and RF performances of f<inf>T</inf>=24GHz and f<inf>max</inf>=51GHz are demonstrated in a 2.1μm-gate-length device. An f<inf>T</inf>-L<inf>g</inf> product is as high as 51 GH-μm.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122583031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5515966
Y. K. Fukai, K. Kurishima, N. Kashio, S. Yamahata
The reliability of sub-micrometers InP-based heterostructure bipolar transistors (HBTs), which are being applied in over-100-Gbit/s ICs, was examined at high current injection conditions. These HBTs had a ledge structure and an emitter electrode consisting with a refractory metal of W, which suppressed surface degradation and metal diffusion, respectively. We conducted bias-temperature (BT) stress tests in several stress conditions of current densities, Jc, up to 10 mA/μιη2 in order to investigate the stability of InP/InGaAs emitter-base (E-B) junction. At 10 mA/μιη2 operation with the junction temperature of 210 °C, dc current gain, ß, was stable for 1000 h. The activation energy for the reduction of β, however, decreased to 1.1 eV, which is suggesting the degradation of the emitter-base (E-B) junction. For the reliability of sub-micrometer, high-speed and low-power InP HBTs at high current densities, stability around the E-B junction has become more dominant.
{"title":"Reliability study on InP/InGaAs emitter-base junction for high-speed and low-power InP HBT","authors":"Y. K. Fukai, K. Kurishima, N. Kashio, S. Yamahata","doi":"10.1109/ICIPRM.2010.5515966","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5515966","url":null,"abstract":"The reliability of sub-micrometers InP-based heterostructure bipolar transistors (HBTs), which are being applied in over-100-Gbit/s ICs, was examined at high current injection conditions. These HBTs had a ledge structure and an emitter electrode consisting with a refractory metal of W, which suppressed surface degradation and metal diffusion, respectively. We conducted bias-temperature (BT) stress tests in several stress conditions of current densities, Jc, up to 10 mA/μιη2 in order to investigate the stability of InP/InGaAs emitter-base (E-B) junction. At 10 mA/μιη2 operation with the junction temperature of 210 °C, dc current gain, ß, was stable for 1000 h. The activation energy for the reduction of β, however, decreased to 1.1 eV, which is suggesting the degradation of the emitter-base (E-B) junction. For the reliability of sub-micrometer, high-speed and low-power InP HBTs at high current densities, stability around the E-B junction has become more dominant.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122833463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516180
Yasunori Kobayashi, J. Motohisa, K. Tomioka, S. Hara, K. Hiruma, T. Fukui
We grew InAsP and InP/InAsP/InP heterostructure NWs (NWs) by selective-area MOVPE and carried out micro-photoluminescence (µ-PL) measurement. We investigated growth conditions for InAsP NWs and that embedded in InP NWs, and obtained exciton and biexciton emissions from InAsP QDs at optimized growth conditions. Negative binding energy of biexciton was observed due to the strong Coulomb interaction between the holes in the QDs.
{"title":"Selective-area MOVPE growth and optical properties of single InAsP quantum dots embedded in InP NWs","authors":"Yasunori Kobayashi, J. Motohisa, K. Tomioka, S. Hara, K. Hiruma, T. Fukui","doi":"10.1109/ICIPRM.2010.5516180","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516180","url":null,"abstract":"We grew InAsP and InP/InAsP/InP heterostructure NWs (NWs) by selective-area MOVPE and carried out micro-photoluminescence (µ-PL) measurement. We investigated growth conditions for InAsP NWs and that embedded in InP NWs, and obtained exciton and biexciton emissions from InAsP QDs at optimized growth conditions. Negative binding energy of biexciton was observed due to the strong Coulomb interaction between the holes in the QDs.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127719002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516293
A. Majumdar, A. Faraon, D. Englund, Erik D. Kim, I. Fushman, Hyochul Kim, P. Petroff, J. Vučković
Quantum dots (QDs) coupled to photonic crystal cavities are interesting both as a testbed for fundamental cavity quantum electrodynamics (CQED) experiments, as well as nano-scale devices for optical quantum and classical information processing. In addition to providing a scalable, robust, on-chip, semiconductor platform, this coupled system also enables very large dipole-field interaction strength, as a result of the field localization inside of sub-cubic wavelength volume (vacuum Rabi frequency is in the range of 10s of GHz). In this paper, we describe some of the recent experiments performed on this system in our group.
{"title":"Quantum and classical information processing with a single quantum dot in photonic crystal cavity","authors":"A. Majumdar, A. Faraon, D. Englund, Erik D. Kim, I. Fushman, Hyochul Kim, P. Petroff, J. Vučković","doi":"10.1109/ICIPRM.2010.5516293","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516293","url":null,"abstract":"Quantum dots (QDs) coupled to photonic crystal cavities are interesting both as a testbed for fundamental cavity quantum electrodynamics (CQED) experiments, as well as nano-scale devices for optical quantum and classical information processing. In addition to providing a scalable, robust, on-chip, semiconductor platform, this coupled system also enables very large dipole-field interaction strength, as a result of the field localization inside of sub-cubic wavelength volume (vacuum Rabi frequency is in the range of 10s of GHz). In this paper, we describe some of the recent experiments performed on this system in our group.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128638470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5515922
T. Kanazawa, K. Wakabayashi, H. Saito, R. Terao, Tomonori Tajima, S. Ikeda, Y. Miyamoto, K. Furuya
We demonstrated a high-mobility InP 5 nm/InGaAs 12 nm composite channel MOSFET with MOVPE regrown n+-source/drain region for low series resistance and high source injection current. A gate dielectric was SiO2 and thickness was 20 nm. A carrier density of regrown InGaAs source/drain layer was over 4 × 1019 cm−3. In the measurement of submicron (= 150 nm) device, the drain current was 0.93 mA/µm at Vg = 3 V, Vd = 1 V and the peak transconductance was 0.53 mS/µm at Vd = 0.65 V, respectively. The channel length dependence of transconductance indicated the good relativity.
{"title":"Submicron InP/InGaAs composite channel MOSFETs with selectively regrown N+-source/drain buried in channel undercut","authors":"T. Kanazawa, K. Wakabayashi, H. Saito, R. Terao, Tomonori Tajima, S. Ikeda, Y. Miyamoto, K. Furuya","doi":"10.1109/ICIPRM.2010.5515922","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5515922","url":null,"abstract":"We demonstrated a high-mobility InP 5 nm/InGaAs 12 nm composite channel MOSFET with MOVPE regrown n<sup>+</sup>-source/drain region for low series resistance and high source injection current. A gate dielectric was SiO<inf>2</inf> and thickness was 20 nm. A carrier density of regrown InGaAs source/drain layer was over 4 × 10<sup>19</sup> cm<sup>−3</sup>. In the measurement of submicron (= 150 nm) device, the drain current was 0.93 mA/µm at V<inf>g</inf> = 3 V, V<inf>d</inf> = 1 V and the peak transconductance was 0.53 mS/µm at V<inf>d</inf> = 0.65 V, respectively. The channel length dependence of transconductance indicated the good relativity.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121222622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516010
E. Lind, M. Egard, Sofia Johansson, A. Johansson, B. Borg, C. Thelander, Karl‐Magnus Persson, A. Dey, L. Wernersson
We report on RF characterization of vertical, 100-nm-gate length InAs nanowire MOSFETs, utilizing wrap-gate technology and Al2O3 high-K gate oxide. The transistors show ft=5.6 GHz and fmax=22 GHz, mainly limited by parasitic capacitances. The RF device performance is described using a hybrid-π model taking hole generation at the drain into account. Electrostatic modeling of the parasitic capacitances for arrays of vertical nanowires indicates that a strong reduction in extrinsic capacitances can be achieved for devices with a small inter-wire separation.
{"title":"High frequency performance of vertical InAs nanowire MOSFET","authors":"E. Lind, M. Egard, Sofia Johansson, A. Johansson, B. Borg, C. Thelander, Karl‐Magnus Persson, A. Dey, L. Wernersson","doi":"10.1109/ICIPRM.2010.5516010","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516010","url":null,"abstract":"We report on RF characterization of vertical, 100-nm-gate length InAs nanowire MOSFETs, utilizing wrap-gate technology and Al<inf>2</inf>O<inf>3</inf> high-K gate oxide. The transistors show f<inf>t</inf>=5.6 GHz and f<inf>max</inf>=22 GHz, mainly limited by parasitic capacitances. The RF device performance is described using a hybrid-π model taking hole generation at the drain into account. Electrostatic modeling of the parasitic capacitances for arrays of vertical nanowires indicates that a strong reduction in extrinsic capacitances can be achieved for devices with a small inter-wire separation.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121360517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5515970
W. Bewley, C. Canedy, C. Kim, M. Kim, J. Lindle, J. Abell, I. Vurgaftman, J. Meyer
We discuss the growth and state-of-the-art performance characteristics of mid-infrared interband cascade lasers. Broad-area devices with 5 active stages display pulsed threshold current densities as low as 400 A/cm2 at room temperature, owing to an unexpectedly strong suppression of Auger recombination. New designs also produce lasers with internal losses as low as ≈ 6 cm−1 at room temperature. We also study the performance of narrow ridges that dissipate heat efficiently for high-temperature cw operation. The degradations of the threshold current density and differential slope efficiency are modest until the ridge width is decreased to 3 μm. A 13-μm-wide uncoated ridge produces up to 45 mW of cw power at 293 K, and displays a maximum wall-plug efficiency of 3.5%. A 5-μm-wide 3-mm-long ridge without any facet coatings operates cw to 345 K, which is a new record high temperature for any semiconductor laser emitting in the 3.0–4.6 μm spectral range.
{"title":"Advances in the growth and performance of antimonide-based mid-infrared interband cascade lasers","authors":"W. Bewley, C. Canedy, C. Kim, M. Kim, J. Lindle, J. Abell, I. Vurgaftman, J. Meyer","doi":"10.1109/ICIPRM.2010.5515970","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5515970","url":null,"abstract":"We discuss the growth and state-of-the-art performance characteristics of mid-infrared interband cascade lasers. Broad-area devices with 5 active stages display pulsed threshold current densities as low as 400 A/cm2 at room temperature, owing to an unexpectedly strong suppression of Auger recombination. New designs also produce lasers with internal losses as low as ≈ 6 cm−1 at room temperature. We also study the performance of narrow ridges that dissipate heat efficiently for high-temperature cw operation. The degradations of the threshold current density and differential slope efficiency are modest until the ridge width is decreased to 3 μm. A 13-μm-wide uncoated ridge produces up to 45 mW of cw power at 293 K, and displays a maximum wall-plug efficiency of 3.5%. A 5-μm-wide 3-mm-long ridge without any facet coatings operates cw to 345 K, which is a new record high temperature for any semiconductor laser emitting in the 3.0–4.6 μm spectral range.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116144288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516140
S. Kraus, I. Kallfass, R. Makon, J. Rosenzweig, R. Driad, M. Moyal, D. Ritter
We present a high linearity 2-bit digital-to-analog converter (DAC) implemented in an InP/GaInAs DHBT technology. The DAC is based upon the current steering architecture. Cascode structure and layout techniques, i.e. static shuffling and dummy devices, have been used to enhance the linearity. The DAC exhibits static integral/differential nonlinearities of 5.5×10−3 LSB, equivalent to a resolution of 9.2 bits. Dynamic measurements qualitatively show proper behavior at 6 GS/s, while simulations with typical on-chip load exhibit sufficiently fast settling at 20 GS/s.
{"title":"High linearity 2-bit current steering InP/GaInAs DHBT digital-to-analog converter","authors":"S. Kraus, I. Kallfass, R. Makon, J. Rosenzweig, R. Driad, M. Moyal, D. Ritter","doi":"10.1109/ICIPRM.2010.5516140","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516140","url":null,"abstract":"We present a high linearity 2-bit digital-to-analog converter (DAC) implemented in an InP/GaInAs DHBT technology. The DAC is based upon the current steering architecture. Cascode structure and layout techniques, i.e. static shuffling and dummy devices, have been used to enhance the linearity. The DAC exhibits static integral/differential nonlinearities of 5.5×10−3 LSB, equivalent to a resolution of 9.2 bits. Dynamic measurements qualitatively show proper behavior at 6 GS/s, while simulations with typical on-chip load exhibit sufficiently fast settling at 20 GS/s.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"156 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116323526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516160
K. Shinoda, S. Makino, T. Fukamachi, K. Adachi, Y. Lee, H. Hayashi, S. Tanaka, M. Aoki, S. Tsuji
Recent advances in integrated photonic devices for next-generation Ethernet are described. In particular, 1.3-µm-range uncooled photonic devices (namely, electroabsorption modulator integrated lasers, directly modulated lasers, and lens integrated devices) are focused on. A key technology for uncooled operation is an InGaAlAs multiple quantum well (MQW), which produces a strong electron confinement. The electroabsorption modulator integrated lasers, which incorporated an InGaAlAs-MQW absorption layer, exhibit uncooled 25.8-Gbit/s and 43-Gbit/s single-mode fiber 10-km transmissions. The 1.3-µm directly modulated laser, which consists of an InGaAlAs MQW distributed feedback (DFB) active stripe, exhibits uncooled direct modulation at 25 Gbit/s. To improve the optical coupling of the directly modulated laser, we developed a lens-integrated surface-emitting laser, which incorporates an InGaAlAs DFB active stripe. This lens-integrated laser exhibits 25-Gbit/s direct modulation up to 100°C. Furthermore, the lens-integrated photodiode exhibited high speed (35 GHz), high responsivity (0.8 A/W), and large alignment tolerance (26 µm) for direct coupling to a single-mode fiber. These photonic devices have demonstrated their potential for implementation in cost-effective 100-Gbit/s and 40-Gbit/s Ethernet.
{"title":"Very-high-bit-rate integrated photonic devices for next-generation Ethernet","authors":"K. Shinoda, S. Makino, T. Fukamachi, K. Adachi, Y. Lee, H. Hayashi, S. Tanaka, M. Aoki, S. Tsuji","doi":"10.1109/ICIPRM.2010.5516160","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516160","url":null,"abstract":"Recent advances in integrated photonic devices for next-generation Ethernet are described. In particular, 1.3-µm-range uncooled photonic devices (namely, electroabsorption modulator integrated lasers, directly modulated lasers, and lens integrated devices) are focused on. A key technology for uncooled operation is an InGaAlAs multiple quantum well (MQW), which produces a strong electron confinement. The electroabsorption modulator integrated lasers, which incorporated an InGaAlAs-MQW absorption layer, exhibit uncooled 25.8-Gbit/s and 43-Gbit/s single-mode fiber 10-km transmissions. The 1.3-µm directly modulated laser, which consists of an InGaAlAs MQW distributed feedback (DFB) active stripe, exhibits uncooled direct modulation at 25 Gbit/s. To improve the optical coupling of the directly modulated laser, we developed a lens-integrated surface-emitting laser, which incorporates an InGaAlAs DFB active stripe. This lens-integrated laser exhibits 25-Gbit/s direct modulation up to 100°C. Furthermore, the lens-integrated photodiode exhibited high speed (35 GHz), high responsivity (0.8 A/W), and large alignment tolerance (26 µm) for direct coupling to a single-mode fiber. These photonic devices have demonstrated their potential for implementation in cost-effective 100-Gbit/s and 40-Gbit/s Ethernet.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128073428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5515990
Shinsuke Tanaka, Seok-Hwan Jeong, A. Uetake, S. Yamazaki, K. Morito
We developed a highly uniform monolithically integrated 8-input and 1-output (8:1) SOA gate switch for a large-scale high-speed switching system. The gain fluctuation due to an internal interference was suppressed with a low loss 8:1 tapered MMI coupler. The device exhibited a very small gain deviation of <2.0 dB for all wavelengths in the C-band, together with a high extinction ratio of >50 dB and an ON-state gain of >10 dB. We also demonstrated a penalty-free amplification of 8×10 Gb/s WDM signals with a large input power dynamic range of >9.8 dB
{"title":"Monolithically-integrated 8:1 SOA gate switch with small gain deviation and large input power dynamic range for WDM signals","authors":"Shinsuke Tanaka, Seok-Hwan Jeong, A. Uetake, S. Yamazaki, K. Morito","doi":"10.1109/ICIPRM.2010.5515990","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5515990","url":null,"abstract":"We developed a highly uniform monolithically integrated 8-input and 1-output (8:1) SOA gate switch for a large-scale high-speed switching system. The gain fluctuation due to an internal interference was suppressed with a low loss 8:1 tapered MMI coupler. The device exhibited a very small gain deviation of <2.0 dB for all wavelengths in the C-band, together with a high extinction ratio of >50 dB and an ON-state gain of >10 dB. We also demonstrated a penalty-free amplification of 8×10 Gb/s WDM signals with a large input power dynamic range of >9.8 dB","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130849590","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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