Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516043
Rei Nishio, S. Tanabe, R. Suzuki, Kosuke Nemoto, T. Miyamoto
Epitaxial growth of GaP on a Si substrate with a GaInP interlayer by a low-pressure metalorganic chemical vapor deposition were investigated using the atomic force microscopy. The surface roughness Ra was decreased from 2.7 nm to 1.3 nm by only inserting the GaInP interlayer under the 600°C. The GaP layer using the GaInP interlayer was optimized under various growth temperature between 500°C and 650°C. The surface roughness Ra was drastically decreased to 0.5 nm when both the GaP and the GaInP interlayer was grown at 550°C.
{"title":"Reduction of surface roughness of GaP on Si substrate using strained GaInP interlayer by MOCVD","authors":"Rei Nishio, S. Tanabe, R. Suzuki, Kosuke Nemoto, T. Miyamoto","doi":"10.1109/ICIPRM.2010.5516043","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516043","url":null,"abstract":"Epitaxial growth of GaP on a Si substrate with a GaInP interlayer by a low-pressure metalorganic chemical vapor deposition were investigated using the atomic force microscopy. The surface roughness Ra was decreased from 2.7 nm to 1.3 nm by only inserting the GaInP interlayer under the 600°C. The GaP layer using the GaInP interlayer was optimized under various growth temperature between 500°C and 650°C. The surface roughness Ra was drastically decreased to 0.5 nm when both the GaP and the GaInP interlayer was grown at 550°C.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134034749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516152
F. Lelarge, N. Chimot, B. Rousseau, F. Martin, R. Brenot, A. Accard
Static and dynamic properties of InP-based Quantum Dashes of 1.55µm directly modulated lasers are reported. Using growth and design optimization, we demonstrate linewidth enhancement factor above threshold as low as 2 and decreasing with injected current. This unique chirp behavior leads to uncompensated and non-amplified SMF 10Gb/s transmissions at a constant bias current from back-to-back up to 65km. This result opens the way to the fabrication of a low cost DML for access and metro applications.
{"title":"Chirp optimization of 1550nm InAs/InP Quantum Dash based directly modulated lasers for 10Gb/s SMF transmission up to 65Km","authors":"F. Lelarge, N. Chimot, B. Rousseau, F. Martin, R. Brenot, A. Accard","doi":"10.1109/ICIPRM.2010.5516152","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516152","url":null,"abstract":"Static and dynamic properties of InP-based Quantum Dashes of 1.55µm directly modulated lasers are reported. Using growth and design optimization, we demonstrate linewidth enhancement factor above threshold as low as 2 and decreasing with injected current. This unique chirp behavior leads to uncompensated and non-amplified SMF 10Gb/s transmissions at a constant bias current from back-to-back up to 65km. This result opens the way to the fabrication of a low cost DML for access and metro applications.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131878734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516281
M. Nomura, S. Iwamoto, Y. Arakawa
We demonstrate laser oscillation in InAs/GaAs single quantum dot (SQD) and photonic crystal nanocavity coupled systems. The coupling SQD provides most of the gain and distinct SQD feature is observed in the photon statistics. Depending on the light-matter coupling strength, laser oscillation starts in the weak- or strong-coupling regime. It is significant that the polariton doublet is still observed at the threshold pump power in the strongly coupled system. This fact indicates that the coherent exchange of quanta between the SQD and the cavity is still sustained under laser oscillation in the intermediate state.
{"title":"Single quantum dot laser using photonic crystal nanocavity","authors":"M. Nomura, S. Iwamoto, Y. Arakawa","doi":"10.1109/ICIPRM.2010.5516281","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516281","url":null,"abstract":"We demonstrate laser oscillation in InAs/GaAs single quantum dot (SQD) and photonic crystal nanocavity coupled systems. The coupling SQD provides most of the gain and distinct SQD feature is observed in the photon statistics. Depending on the light-matter coupling strength, laser oscillation starts in the weak- or strong-coupling regime. It is significant that the polariton doublet is still observed at the threshold pump power in the strongly coupled system. This fact indicates that the coherent exchange of quanta between the SQD and the cavity is still sustained under laser oscillation in the intermediate state.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133819763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516345
I. Nagai, Tomohisa Kato, Tomonori Miura, Hiroyuki Kamata, K. Naoe, K. Sanada, H. Okumura
Aluminum nitride (AlN) bulk single crystals up to 45 mm in diameter and 10 mm in thickness have been successfully grown on 6H-SiC(0001) substrates by the sublimation method. Moreover, high growth rate of 200μm/h has been achieved by high temperature homo-epitaxial AlN growth on AlN(0001) substrate. The Raman spectrum indicates that the polytype of the grown AlN single crystals is a Wurtzite-2H type structure, and the crystals do not include any impurity phases. In both the hetero- and homo-epitaxial AlN bulk single crystal growth, the quality at the top of the crystal improves as the crystal thickness increases along the <0001> direction during the growth: low etch pit density 7 × 104 cm−2 and 1 × 104 cm−2 have been achieved at a thickness of 8 mm and 2 mm in the hetero- and homo-epitaxial growth, respectively.
{"title":"AlN bulk single crystal growth on SiC and AlN substrates by sublimation method","authors":"I. Nagai, Tomohisa Kato, Tomonori Miura, Hiroyuki Kamata, K. Naoe, K. Sanada, H. Okumura","doi":"10.1109/ICIPRM.2010.5516345","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516345","url":null,"abstract":"Aluminum nitride (AlN) bulk single crystals up to 45 mm in diameter and 10 mm in thickness have been successfully grown on 6H-SiC(0001) substrates by the sublimation method. Moreover, high growth rate of 200μm/h has been achieved by high temperature homo-epitaxial AlN growth on AlN(0001) substrate. The Raman spectrum indicates that the polytype of the grown AlN single crystals is a Wurtzite-2H type structure, and the crystals do not include any impurity phases. In both the hetero- and homo-epitaxial AlN bulk single crystal growth, the quality at the top of the crystal improves as the crystal thickness increases along the <0001> direction during the growth: low etch pit density 7 × 104 cm−2 and 1 × 104 cm−2 have been achieved at a thickness of 8 mm and 2 mm in the hetero- and homo-epitaxial growth, respectively.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115843744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516309
R. Kunkel, H. Bach, D. Hoffmann, G. Mekonnen, R. Zhang, D. Schmidt, M. Schell, A. O. Moñux, R. Halir, Í. Molina-Fernández
An InP-based 90° hybrid OEIC with integrated pin-photodiodes is presented. It operates unaffected in the temperature range of 15°–35° C, offering low PDL <1 dB, and stable performance in the wavelengths of 1530 nm to 1565 nm.
{"title":"Athermal InP-based 90°-hybrid Rx OEICs with pin-PDs >60 GHz for coherent DP-QPSK photoreceivers","authors":"R. Kunkel, H. Bach, D. Hoffmann, G. Mekonnen, R. Zhang, D. Schmidt, M. Schell, A. O. Moñux, R. Halir, Í. Molina-Fernández","doi":"10.1109/ICIPRM.2010.5516309","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516309","url":null,"abstract":"An InP-based 90° hybrid OEIC with integrated pin-photodiodes is presented. It operates unaffected in the temperature range of 15°–35° C, offering low PDL <1 dB, and stable performance in the wavelengths of 1530 nm to 1565 nm.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117133929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516301
Seok-Hwan Jeong, K. Morito
We proposed a novel 90° hybrid using a paired-interference based linearly tapered 2×4 multimode interference (MMI) coupler and a 2×2 MMI coupler. We theoretically calculated and experimentally demonstrated that the proposed 90° hybrid has very short device length of ~227 μm and is never accompanied by any waveguide intersections for performing balanced detection. The proposed device exhibited quadrature phase response with a relative phase deviation of <±5° over C-band spectral range.
{"title":"Compact InP-based 90° hybrid using a tapered 2×4 MMI and a 2×2 MMI coupler","authors":"Seok-Hwan Jeong, K. Morito","doi":"10.1109/ICIPRM.2010.5516301","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516301","url":null,"abstract":"We proposed a novel 90° hybrid using a paired-interference based linearly tapered 2×4 multimode interference (MMI) coupler and a 2×2 MMI coupler. We theoretically calculated and experimentally demonstrated that the proposed 90° hybrid has very short device length of ~227 μm and is never accompanied by any waveguide intersections for performing balanced detection. The proposed device exhibited quadrature phase response with a relative phase deviation of <±5° over C-band spectral range.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"124 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116331127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5515974
D. Lackner, O. Pitts, M. Martine, Y. Cherng, P. Mooney, M. Thewalt, E. Plis, S. Watkins
III-V semiconductor materials are under active investigation for use as optical detectors in the mid infrared wavelength region from 3 to 12 µm. In this paper we summarize recent progress on the development of III-V materials for this application based on the material InAsSb. We first present the results of investigations in the use of strained balanced type II superlattices of InAsSb/InAs to extend the absorption wavelength of this material system beyond the limits of the maximum InAsSb bulk value. We present results on the growth of InPSb heterojunction structures with the aim of reducing thermal diffusion current and surface leakage. Finally we present some preliminary device results indicating the promise of this material system.
{"title":"InAsSb and InPSb materials for mid infrared photodetectors","authors":"D. Lackner, O. Pitts, M. Martine, Y. Cherng, P. Mooney, M. Thewalt, E. Plis, S. Watkins","doi":"10.1109/ICIPRM.2010.5515974","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5515974","url":null,"abstract":"III-V semiconductor materials are under active investigation for use as optical detectors in the mid infrared wavelength region from 3 to 12 µm. In this paper we summarize recent progress on the development of III-V materials for this application based on the material InAsSb. We first present the results of investigations in the use of strained balanced type II superlattices of InAsSb/InAs to extend the absorption wavelength of this material system beyond the limits of the maximum InAsSb bulk value. We present results on the growth of InPSb heterojunction structures with the aim of reducing thermal diffusion current and surface leakage. Finally we present some preliminary device results indicating the promise of this material system.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"42 28","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120812851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5515954
V. Nodjiadjim, M. Riet, A. Scavennec, P. Berdaguer, S. Piotrowicz, O. Jardel, J. Godin, P. Bove, M. Lijadi
This paper presents multi-finger InP/GaAsSb/InP HBTs designed for millimeter-wave applications. The 0.7×10 µm2 emitter size 4- and 8- finger devices demonstrated fT and fmax above 200 GHz and 400 GHz respectively, a current gain of 28 and an emitter breakdown voltage of 7V. We also report on the performances of a 2-stage power amplifier based on more conservative devices (1×15 µm2 two-emitter finger). This circuit delivers an output power above 15 dBm at 60 GHz.
{"title":"400 GHz FMAX InP/GaAsSb HBT for millimeter-wave applications","authors":"V. Nodjiadjim, M. Riet, A. Scavennec, P. Berdaguer, S. Piotrowicz, O. Jardel, J. Godin, P. Bove, M. Lijadi","doi":"10.1109/ICIPRM.2010.5515954","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5515954","url":null,"abstract":"This paper presents multi-finger InP/GaAsSb/InP HBTs designed for millimeter-wave applications. The 0.7×10 µm<sup>2</sup> emitter size 4- and 8- finger devices demonstrated f<inf>T</inf> and f<inf>max</inf> above 200 GHz and 400 GHz respectively, a current gain of 28 and an emitter breakdown voltage of 7V. We also report on the performances of a 2-stage power amplifier based on more conservative devices (1×15 µm<sup>2</sup> two-emitter finger). This circuit delivers an output power above 15 dBm at 60 GHz.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125752588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516369
Toshiyuki Yoshida, T. Hashizume
A novel air-gap capacitance-Voltage (C-V) method is introduced. This method is powerful tool for characterizing electrical properties of "free" or ultrathin-insulator-covered surfaces for III-V semiconductors. Air-gap C-V characteristics of p-InP surfaces with and without natural oxide are reported for the first time. Unexpectedly, the surface with natural oxide gives relatively low-density surface states. Surfaces covered with ultrathin Al2O3 film were also measured, indicating the importance for further investigation and optimization of surface process.
{"title":"Air-gap capacitance-Voltage analysis of p-InP surfaces","authors":"Toshiyuki Yoshida, T. Hashizume","doi":"10.1109/ICIPRM.2010.5516369","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516369","url":null,"abstract":"A novel air-gap capacitance-Voltage (C-V) method is introduced. This method is powerful tool for characterizing electrical properties of \"free\" or ultrathin-insulator-covered surfaces for III-V semiconductors. Air-gap C-V characteristics of p-InP surfaces with and without natural oxide are reported for the first time. Unexpectedly, the surface with natural oxide gives relatively low-density surface states. Surfaces covered with ultrathin Al2O3 film were also measured, indicating the importance for further investigation and optimization of surface process.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126105398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516072
C. Jin, O. Kojima, T. Inoue, S. Ohta, T. Kita, O. Wada, M. Hopkinson, K. Akahane
We have investigated at the first time an all-optical switch using self-assembled InAs/GaAs quantum dots (QDs) within a vertical cavity structure. The optical nonlinearity of the QD switch has been optimized by an asymmetric cavity to achieve the maximum differential reflectivity. Optical switching via QD excited states exhibits a fast decay with a time constant down to 23 ps and a wavelength tunability over 30 nm. By compared to the theoretical design, the absorption strength of QD layers within the cavity has been determined.
{"title":"All-optical switch using InAs quantum dots in a vertical cavity","authors":"C. Jin, O. Kojima, T. Inoue, S. Ohta, T. Kita, O. Wada, M. Hopkinson, K. Akahane","doi":"10.1109/ICIPRM.2010.5516072","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516072","url":null,"abstract":"We have investigated at the first time an all-optical switch using self-assembled InAs/GaAs quantum dots (QDs) within a vertical cavity structure. The optical nonlinearity of the QD switch has been optimized by an asymmetric cavity to achieve the maximum differential reflectivity. Optical switching via QD excited states exhibits a fast decay with a time constant down to 23 ps and a wavelength tunability over 30 nm. By compared to the theoretical design, the absorption strength of QD layers within the cavity has been determined.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116212749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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