Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516060
J. Ng, S. Tan, Y. L. Goh, C. H. Tan, J. David, J. Allam, S. Sweeney, A. Adams
Two issues with using InGaAsN as absorber in avalanche photodiodes (APDs) for 1310nm wavelength applications are addressed here. Firstly, we demonstrated InGaAsN p-i-n diodes with stable photoresponse around 1310nm but reverse leakage current density slightly above the acceptable limit of ~0.2mA/cm2 at 150kV/cm. We also investigated whether or not InGaAsN as absorber is compatible with Al0.8Ga0.2As (the proposed avalanche material in our separate-absorption-multiplication APD design) in terms of the relationship between α and β in InGaAsN. Our observations suggest α ~ β in InGaAsN, making it compatible with Al0.8Ga0.2As.
{"title":"InGaAsN as absorber in APDs for 1.3 micron wavelength applications","authors":"J. Ng, S. Tan, Y. L. Goh, C. H. Tan, J. David, J. Allam, S. Sweeney, A. Adams","doi":"10.1109/ICIPRM.2010.5516060","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516060","url":null,"abstract":"Two issues with using InGaAsN as absorber in avalanche photodiodes (APDs) for 1310nm wavelength applications are addressed here. Firstly, we demonstrated InGaAsN p-i-n diodes with stable photoresponse around 1310nm but reverse leakage current density slightly above the acceptable limit of ~0.2mA/cm<sup>2</sup> at 150kV/cm. We also investigated whether or not InGaAsN as absorber is compatible with Al<inf>0.8</inf>Ga<inf>0.2</inf>As (the proposed avalanche material in our separate-absorption-multiplication APD design) in terms of the relationship between α and β in InGaAsN. Our observations suggest α ~ β in InGaAsN, making it compatible with Al<inf>0.8</inf>Ga<inf>0.2</inf>As.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127808105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516128
Chao-Min Chang, Shu-Han Chen, Sheng-Yu Wang, J. Chyi
We report on the characterization of InP-based heterojunction bipolar transistors (HBTs) with low turn-on voltage and high current gain by using InGaAsSb as the base layer. The low turn-on voltage of 0.43 V is attributed to the smaller band gap of the In0.25Ga0.75As072Sb0.28 material. High current gain of 74 is observed despite a heavily Be-doped (9.0×1019 cm−3) base is used, suggesting a long minority carrier lifetime (τn) in the InGaAsSb material. Moreover, low specific contact resistivity of 5×10−8 Ω-cm2 is also demonstrated on separate In0.25Ga0.75As072Sb0.28 samples.
{"title":"Characterization of InAlAs/In0.25Ga0.75As0.72Sb0.28/InGaAs double heterojunction bipolar transistors","authors":"Chao-Min Chang, Shu-Han Chen, Sheng-Yu Wang, J. Chyi","doi":"10.1109/ICIPRM.2010.5516128","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516128","url":null,"abstract":"We report on the characterization of InP-based heterojunction bipolar transistors (HBTs) with low turn-on voltage and high current gain by using InGaAsSb as the base layer. The low turn-on voltage of 0.43 V is attributed to the smaller band gap of the In<inf>0.25</inf>Ga<inf>0.75</inf>As<inf>072</inf>Sb<inf>0.28</inf> material. High current gain of 74 is observed despite a heavily Be-doped (9.0×10<sup>19</sup> cm<sup>−3</sup>) base is used, suggesting a long minority carrier lifetime (τ<inf>n</inf>) in the InGaAsSb material. Moreover, low specific contact resistivity of 5×10<sup>−8</sup> Ω-cm<sup>2</sup> is also demonstrated on separate In<inf>0.25</inf>Ga<inf>0.75</inf>As<inf>072</inf>Sb<inf>0.28</inf> samples.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133649979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516265
H. Sugiyama, H. Matsuzaki, H. Yokoyama, T. Enoki
Metal-organic vapor-phase epitaxy (MOVPE) growth of In-rich InxGa1−xAs on InP was investigated as a way to obtain extremely high electron mobility in modulation-doped (MD) structures. High-quality In0.53Ga0.47As/In0.8Ga0.2As composite-channel (CC) MD structures were successfully grown without significant lowering of growth temperature. The room-temperature electron mobility in the CC MD reached 150,000 cm2/Vs at the sheet carrier concentration (Ns) of 2.1×1012 cm−2, which is one of the highest ever reported in MOVPE-grown InP-based InGaAs/InAlAs MD structures.
{"title":"High-electron-mobility In0.53Ga0.47As/In0.8Ga0.2As composite-channel modulation-doped structures grown by metal-organic vapor-phase epitaxy","authors":"H. Sugiyama, H. Matsuzaki, H. Yokoyama, T. Enoki","doi":"10.1109/ICIPRM.2010.5516265","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516265","url":null,"abstract":"Metal-organic vapor-phase epitaxy (MOVPE) growth of In-rich In<inf>x</inf>Ga<inf>1−x</inf>As on InP was investigated as a way to obtain extremely high electron mobility in modulation-doped (MD) structures. High-quality In<inf>0.53</inf>Ga<inf>0.47</inf>As/In<inf>0.8</inf>Ga<inf>0.2</inf>As composite-channel (CC) MD structures were successfully grown without significant lowering of growth temperature. The room-temperature electron mobility in the CC MD reached 150,000 cm<sup>2</sup>/Vs at the sheet carrier concentration (Ns) of 2.1×10<sup>12</sup> cm<sup>−2</sup>, which is one of the highest ever reported in MOVPE-grown InP-based InGaAs/InAlAs MD structures.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125555876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516273
K. Kim, Y. Sakai, D. Krishnamurthy, S. Hasegawa, H. Asahi
TlInGaAsN/TlGaAsN triple quantum wells (TQWs) with different In and N concentration in the quantum wells (QWs) and barriers were grown by gas-source molecular beam epitaxy. The higher Tl incorporation was obtained for the TlInGaAsN/TlGaAsN TQWs having higher N concentration in the QWs region. Temperature dependencies of the photoluminescence (PL) spectra for the TlInGaAsN /TlGaAsN TQWs with different Tl incorporation in active region were compared and studied. Reduction in the temperature dependence of the PL peak energy was observed by increased Tl incorporation in the active region.
{"title":"Growth and characterization of TlInGaAsN/TlGaAsN triple quantum wells on GaAs substrates","authors":"K. Kim, Y. Sakai, D. Krishnamurthy, S. Hasegawa, H. Asahi","doi":"10.1109/ICIPRM.2010.5516273","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516273","url":null,"abstract":"TlInGaAsN/TlGaAsN triple quantum wells (TQWs) with different In and N concentration in the quantum wells (QWs) and barriers were grown by gas-source molecular beam epitaxy. The higher Tl incorporation was obtained for the TlInGaAsN/TlGaAsN TQWs having higher N concentration in the QWs region. Temperature dependencies of the photoluminescence (PL) spectra for the TlInGaAsN /TlGaAsN TQWs with different Tl incorporation in active region were compared and studied. Reduction in the temperature dependence of the PL peak energy was observed by increased Tl incorporation in the active region.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122180758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516237
J. Engelstaedter, B. Roycroft, F. Peters, B. Corbett
We present a novel tunable laser concept. The device employs an active interleaved rear mirror for wavelength selection and tuning enhancement. Rapid wavelength switching in the laser is investigated using a heterodyne method for time resolved spectral characterization. A very short transition time of 60 ps and SMSR recovery after less than 2 ns are observed.
{"title":"Fast wavelength switching in interleaved rear reflector laser","authors":"J. Engelstaedter, B. Roycroft, F. Peters, B. Corbett","doi":"10.1109/ICIPRM.2010.5516237","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516237","url":null,"abstract":"We present a novel tunable laser concept. The device employs an active interleaved rear mirror for wavelength selection and tuning enhancement. Rapid wavelength switching in the laser is investigated using a heterodyne method for time resolved spectral characterization. A very short transition time of 60 ps and SMSR recovery after less than 2 ns are observed.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134205849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516217
Daisuke Kondo, T. Okumura, H. Ito, Seunghun Lee, T. Amemiya, N. Nishiyama, S. Arai
A lateral junction type photodiode grown on a semi-insulating InP substrate was realized by 3-step OMVPE growth. The responsivity of 0.27 A/W, 3 dB bandwidth of 6 GHz and 7.5 GHz at a bias voltage of 0 V and −2 V, respectively, were obtained for the stripe width of 1.4 µm and device length of 220µm. An error free transmissions up to 6 Gbps at 0 V were confirmed.
{"title":"Lateral junction waveguide type photodiode for membrane photonic circuits","authors":"Daisuke Kondo, T. Okumura, H. Ito, Seunghun Lee, T. Amemiya, N. Nishiyama, S. Arai","doi":"10.1109/ICIPRM.2010.5516217","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516217","url":null,"abstract":"A lateral junction type photodiode grown on a semi-insulating InP substrate was realized by 3-step OMVPE growth. The responsivity of 0.27 A/W, 3 dB bandwidth of 6 GHz and 7.5 GHz at a bias voltage of 0 V and −2 V, respectively, were obtained for the stripe width of 1.4 µm and device length of 220µm. An error free transmissions up to 6 Gbps at 0 V were confirmed.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134377471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516333
T. Hoshi, H. Sugiyama, H. Yokoyama, K. Kurishima, M. Ida, S. Yamahata
This paper reports metal-organic chemical vapor deposition (MOCVD) growth of undoped and C-doped InxGa1−xAs1−ySby on (001) InP substrates for the first time. We investigated the relationship between the InxGa1−xAs1−ySby alloy composition and molar flow ratio of group-III and group-V precursors in both undoped and C-doped InxGa1−xAs1−ySby and found a characteristic etching effect caused by the decomposition of carbon tetrabromide (CBr4). C-doped InGaAsSb films with high hole concentrations of over 2×1019 cm−3 were obtained for the In composition of less or equal to 0.10. The effect of hydrogen passivation of C-acceptors in C-doped InGaAsSb was negligibly small and similar to that in C-doped GaAsSb.
{"title":"Carbon-doped InxGa1−xAs1−ySby on InP grown by metal-organic chemical vapor deposition","authors":"T. Hoshi, H. Sugiyama, H. Yokoyama, K. Kurishima, M. Ida, S. Yamahata","doi":"10.1109/ICIPRM.2010.5516333","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516333","url":null,"abstract":"This paper reports metal-organic chemical vapor deposition (MOCVD) growth of undoped and C-doped In<inf>x</inf>Ga<inf>1−x</inf>As<inf>1−y</inf>Sb<inf>y</inf> on (001) InP substrates for the first time. We investigated the relationship between the In<inf>x</inf>Ga<inf>1−x</inf>As<inf>1−y</inf>Sb<inf>y</inf> alloy composition and molar flow ratio of group-III and group-V precursors in both undoped and C-doped In<inf>x</inf>Ga<inf>1−x</inf>As<inf>1−y</inf>Sb<inf>y</inf> and found a characteristic etching effect caused by the decomposition of carbon tetrabromide (CBr<inf>4</inf>). C-doped InGaAsSb films with high hole concentrations of over 2×10<sup>19</sup> cm<sup>−3</sup> were obtained for the In composition of less or equal to 0.10. The effect of hydrogen passivation of C-acceptors in C-doped InGaAsSb was negligibly small and similar to that in C-doped GaAsSb.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114762892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516080
K. Chuang, C. Kuo, T. Tzeng, D. Feng, T. Lay
We have investigated the electro-optic effect for the vertically coupled InGaAs quantum dots. In addition to large TE-polarized electro-optic coefficient, TM-polarized electro-optic effect is observed. The linear and quadratic electro-optic coefficients are larger than GaAs-base multiple quantum well structures.
{"title":"Enhanced TE/TM electro-optic effect in vertically coupled InGaAs quantum dots","authors":"K. Chuang, C. Kuo, T. Tzeng, D. Feng, T. Lay","doi":"10.1109/ICIPRM.2010.5516080","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516080","url":null,"abstract":"We have investigated the electro-optic effect for the vertically coupled InGaAs quantum dots. In addition to large TE-polarized electro-optic coefficient, TM-polarized electro-optic effect is observed. The linear and quadratic electro-optic coefficients are larger than GaAs-base multiple quantum well structures.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115884168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5515946
Y. Ishikawa, K. Kounoike, M. Nishioka, T. Kawase, K. Kaminaka, K. Nanbu
N-type InP substrates have been manufactured using Vertical Boat (VB) Technique. In this paper, we will report improvement in etch-pit density (EPD) distribution for 2-inch S-doped, 2-inch-Sn-doped and 4-inch S-doped VB InP substrates in comparison to VCZ (SEI's proprietary Vapor pressure controlled Czochralski) InP substrates. EPD of 2-inch S-doped VB InP substrate is lower than SEI's standard EPD specification 500 cm−2 from seed-end to tail-end. Etch-pit densities are drastically reduced compared to those of VCZ with carrier concentration ranging from 3E18 cm−3 to 4E18 cm−3. The VB technique enables a decrease in slip-line defects of S-doped InP with low carrier concentration range. Average lot size of 2-inch S-doped VB InP is almost 1.4 times larger than that of VCZ InP. 4-inch S-doped VB substrates and 2-inch Sn-doped VB substrates are also manufactured using the VB technique.
{"title":"Preparation of n-type InP substrates by Vertical Boat growth","authors":"Y. Ishikawa, K. Kounoike, M. Nishioka, T. Kawase, K. Kaminaka, K. Nanbu","doi":"10.1109/ICIPRM.2010.5515946","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5515946","url":null,"abstract":"N-type InP substrates have been manufactured using Vertical Boat (VB) Technique. In this paper, we will report improvement in etch-pit density (EPD) distribution for 2-inch S-doped, 2-inch-Sn-doped and 4-inch S-doped VB InP substrates in comparison to VCZ (SEI's proprietary Vapor pressure controlled Czochralski) InP substrates. EPD of 2-inch S-doped VB InP substrate is lower than SEI's standard EPD specification 500 cm−2 from seed-end to tail-end. Etch-pit densities are drastically reduced compared to those of VCZ with carrier concentration ranging from 3E18 cm−3 to 4E18 cm−3. The VB technique enables a decrease in slip-line defects of S-doped InP with low carrier concentration range. Average lot size of 2-inch S-doped VB InP is almost 1.4 times larger than that of VCZ InP. 4-inch S-doped VB substrates and 2-inch Sn-doped VB substrates are also manufactured using the VB technique.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116850454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5515914
M. Rodwell, U. Singisetti, M. Wistey, G. Burek, A. Carter, A. Baraskar, J. Law, B. Thibeault, Eun Ji Kim, B. Shin, Yong-ju Lee, S. Steiger, S. Lee, H. Ryu, Y. Tan, G. Hegde, L. Wang, E. Chagarov, A. Gossard, W. Frensley, A. Kummel, C. Palmstrøm, P. McIntyre, T. Boykin, G. Klimek, P. Asbeck
III-V FETs are in development for both THz and VLSI applications. In VLSI, high drive currents are sought at low gate drive voltages, while in THz circuits, high cutoff frequencies are required. In both cases, source and drain access resistivities must be decreased, and transconductance and drain current per unit gate width must be increased by reducing the gate dielectric thickness, reducing the inversion layer depth, and increasing the channel 2-DEG density of states. We here describe both nm self-aligned fabrication processes and channel designs to address these scaling limits.
{"title":"III-V MOSFETs: Scaling laws, scaling limits, fabrication processes","authors":"M. Rodwell, U. Singisetti, M. Wistey, G. Burek, A. Carter, A. Baraskar, J. Law, B. Thibeault, Eun Ji Kim, B. Shin, Yong-ju Lee, S. Steiger, S. Lee, H. Ryu, Y. Tan, G. Hegde, L. Wang, E. Chagarov, A. Gossard, W. Frensley, A. Kummel, C. Palmstrøm, P. McIntyre, T. Boykin, G. Klimek, P. Asbeck","doi":"10.1109/ICIPRM.2010.5515914","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5515914","url":null,"abstract":"III-V FETs are in development for both THz and VLSI applications. In VLSI, high drive currents are sought at low gate drive voltages, while in THz circuits, high cutoff frequencies are required. In both cases, source and drain access resistivities must be decreased, and transconductance and drain current per unit gate width must be increased by reducing the gate dielectric thickness, reducing the inversion layer depth, and increasing the channel 2-DEG density of states. We here describe both nm self-aligned fabrication processes and channel designs to address these scaling limits.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"136 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123590519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：