Pub Date : 2014-06-19DOI: 10.1109/IMFEDK.2014.6867055
Shota Wakamiya, N. Matsuo, Takahiro Kobayashi, A. Heya
We presented the novel structure of the solar cell that has the metal-Insulator-semiconductor (MIS) diode at the side wall of the electricity generation layer. It is found that the gate voltage is effective to improve the conversion efficiency of the solar cell with large surface recombination velocities.
{"title":"Study of thin film solar cell with metal-Insulator-semiconductor diode to control carrier recombination","authors":"Shota Wakamiya, N. Matsuo, Takahiro Kobayashi, A. Heya","doi":"10.1109/IMFEDK.2014.6867055","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867055","url":null,"abstract":"We presented the novel structure of the solar cell that has the metal-Insulator-semiconductor (MIS) diode at the side wall of the electricity generation layer. It is found that the gate voltage is effective to improve the conversion efficiency of the solar cell with large surface recombination velocities.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128812604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-19DOI: 10.1109/IMFEDK.2014.6867068
S. Yagi, Masayuki Matsuo, K. Koike, Y. Harada, S. Sasa, M. Yano
We report the postgrowth annealing effects on the structural, optical, and electrical properties of a low-temperature grown β-phase MoO3 film on a c-plane sapphire substrate by molecular beam epitaxy. By employing the postgrowth annealing at 600°C in an oxygen atmosphere, the film was completely transformed from β-phase to thermo-dynamically stable α-phase. On the other hand, oxygen deficient MoO3-x domains were introduced into the film by the annealing at the same temperature in a nitrogen atmosphere. The latter film exhibited a high absorbance in a visible region accompanied by a decrease in resistivity.
{"title":"Postgrowth annealing effects on structural, optical, and electrical properties of β-MoO3 films grown by molecular beam epitaxy","authors":"S. Yagi, Masayuki Matsuo, K. Koike, Y. Harada, S. Sasa, M. Yano","doi":"10.1109/IMFEDK.2014.6867068","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867068","url":null,"abstract":"We report the postgrowth annealing effects on the structural, optical, and electrical properties of a low-temperature grown β-phase MoO3 film on a c-plane sapphire substrate by molecular beam epitaxy. By employing the postgrowth annealing at 600°C in an oxygen atmosphere, the film was completely transformed from β-phase to thermo-dynamically stable α-phase. On the other hand, oxygen deficient MoO3-x domains were introduced into the film by the annealing at the same temperature in a nitrogen atmosphere. The latter film exhibited a high absorbance in a visible region accompanied by a decrease in resistivity.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126585820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-19DOI: 10.1109/IMFEDK.2014.6867051
Shohei Nakamura, N. Matsuo, K. Yamana, A. Heya, T. Takada, Masataka Fukuyama, S. Yokoyama
The carrier behavior in DNA was examined using the DNA channel/SiO2/Si gate structure. The source/drain electrodes with a gap of 120 nm etching a SOI film was prepared and DNA was fixed between the electrodes. The dID/dVD shows the maximum value at the drain voltage of 0.3 V. This phenomenon relates to the trapped and detrapped electrons in DNA. The electrons were trapped by guanine-base, and they were detrapped by the electric field in the channel.
{"title":"Study of the conduction mechanism of the DNA memory FET","authors":"Shohei Nakamura, N. Matsuo, K. Yamana, A. Heya, T. Takada, Masataka Fukuyama, S. Yokoyama","doi":"10.1109/IMFEDK.2014.6867051","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867051","url":null,"abstract":"The carrier behavior in DNA was examined using the DNA channel/SiO2/Si gate structure. The source/drain electrodes with a gap of 120 nm etching a SOI film was prepared and DNA was fixed between the electrodes. The dID/dVD shows the maximum value at the drain voltage of 0.3 V. This phenomenon relates to the trapped and detrapped electrons in DNA. The electrons were trapped by guanine-base, and they were detrapped by the electric field in the channel.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122002624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-19DOI: 10.1109/IMFEDK.2014.6867046
H. Hayami, Y. Ishii, K. Sasagawa, T. Noda, T. Tokuda, J. Ohta
We have developed a prototype of battery-powered implantable image sensor unit and successfully demonstrated its operation in phosphate buffered saline (PBS) solution as simulant body solution. We have also proposed its equivalent circuit model for circuit simulation. The transmitted signal waveforms are in good agreement with the simulation result by using the model. The images taken by the implantable image sensor has been recovered from the signal received outside PBS solution.
{"title":"Body channel digital pulse transmission for biometric measurement by fully implantable CMOS image sensor","authors":"H. Hayami, Y. Ishii, K. Sasagawa, T. Noda, T. Tokuda, J. Ohta","doi":"10.1109/IMFEDK.2014.6867046","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867046","url":null,"abstract":"We have developed a prototype of battery-powered implantable image sensor unit and successfully demonstrated its operation in phosphate buffered saline (PBS) solution as simulant body solution. We have also proposed its equivalent circuit model for circuit simulation. The transmitted signal waveforms are in good agreement with the simulation result by using the model. The images taken by the implantable image sensor has been recovered from the signal received outside PBS solution.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131343843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-19DOI: 10.1109/IMFEDK.2014.6867080
Yi-Wei Liao, Yusuke Sato, H. Kajii, Y. Ohmori
The characteristics of polymer photodetectors using Ga-doped ZnO (GZO) electrode modified by phosphonic acid-based self-assembled monolayer treatment in a short time are investigated. A polymer photodetector based on a blend of a donor, poly(3-hexylthiophene) (P3HT), and an acceptor, fullerene derivative [6-6]phenyl-C61-butyric acid methyl ester (PCBM) with GZO modified by 2,3,4,5,6-pentafluorobenzylphosphonic acid (FBPA) exhibits incident-photon-to-current conversion efficiency (IPCE) of approximately 55% at -2 V under green light irradiation (λ = 500 nm). The characteristics of the device with GZO modified by FBPA treatment are improved. For the P3HT:PCBM device with FBPA, the dark current decreases, which results in the improved photodetector detectivity.
研究了膦酸基自组装单层修饰的ga掺杂ZnO电极在短时间内制备的聚合物光电探测器的特性。基于给体聚(3-己基噻吩)(P3HT)和受体富勒烯衍生物[6-6]苯基c61 -丁酸甲酯(PCBM)与2,3,4,5,6-五氟苯基膦酸(FBPA)修饰的GZO的混合物的聚合物光电探测器在-2 V (λ = 500 nm)下显示出约55%的入射光子电流转换效率(IPCE)。通过FBPA处理改性GZO，提高了器件的性能。对于含有FBPA的P3HT:PCBM器件，暗电流减小，从而提高了光电探测器的探测率。
{"title":"Characteristics of polymer photodetectors using Ga-doped ZnO electrode modified by self-assembled monolayer treatment","authors":"Yi-Wei Liao, Yusuke Sato, H. Kajii, Y. Ohmori","doi":"10.1109/IMFEDK.2014.6867080","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867080","url":null,"abstract":"The characteristics of polymer photodetectors using Ga-doped ZnO (GZO) electrode modified by phosphonic acid-based self-assembled monolayer treatment in a short time are investigated. A polymer photodetector based on a blend of a donor, poly(3-hexylthiophene) (P3HT), and an acceptor, fullerene derivative [6-6]phenyl-C61-butyric acid methyl ester (PCBM) with GZO modified by 2,3,4,5,6-pentafluorobenzylphosphonic acid (FBPA) exhibits incident-photon-to-current conversion efficiency (IPCE) of approximately 55% at -2 V under green light irradiation (λ = 500 nm). The characteristics of the device with GZO modified by FBPA treatment are improved. For the P3HT:PCBM device with FBPA, the dark current decreases, which results in the improved photodetector detectivity.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"526 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131360846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-19DOI: 10.1109/IMFEDK.2014.6867079
L. Chai, J. Liang, S. Nishida, M. Morimoto, N. Shigekawa
Effects of annealing on GaAs/Si bonding interfaces of III-V-on-Si hybrid tandem solar cells were investigated. Using a cross sectional transmission electron microscope, an amorphous layer was observed at the interfaces of GaAs/Si junctions that had been fabricated by the surface active bonding method. The amorphous layer vanished after the annealing at 400°C. We also investigated the effects of the annealing on the current-voltage characteristics of n+-GaAs/n++-Si and p+-GaAs/n++-Si junctions.
{"title":"Effects of annealing on GaAs/Si bonding interfaces for hybrid tandem solar cells","authors":"L. Chai, J. Liang, S. Nishida, M. Morimoto, N. Shigekawa","doi":"10.1109/IMFEDK.2014.6867079","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867079","url":null,"abstract":"Effects of annealing on GaAs/Si bonding interfaces of III-V-on-Si hybrid tandem solar cells were investigated. Using a cross sectional transmission electron microscope, an amorphous layer was observed at the interfaces of GaAs/Si junctions that had been fabricated by the surface active bonding method. The amorphous layer vanished after the annealing at 400°C. We also investigated the effects of the annealing on the current-voltage characteristics of n+-GaAs/n++-Si and p+-GaAs/n++-Si junctions.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114944689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-19DOI: 10.1109/IMFEDK.2014.6867072
S. Hashimoto, Shinpei Fuchida, Syu Ou, K. Yamashita, M. Noda
An MOD-made BaTiO3 (BT) thin film was prepared for investigating the relation between its ferroelectric properties and the behavior of resistive hysteresis. For the ferroelectric 110 nm-thickness BT film, its coercive field is observed to relate quantitatively to the characteristics of resistive hysteresis, where the current on/off ratio is obtained as 1-2 orders of magnitude. We consider that the ferroelectricity in the film makes a different type of behavior in resistive hysteresis and is effective for improving the behavior.
{"title":"Resistive hysteresis of BaTiO3 ferroelectric thin film prepared by MOD method","authors":"S. Hashimoto, Shinpei Fuchida, Syu Ou, K. Yamashita, M. Noda","doi":"10.1109/IMFEDK.2014.6867072","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867072","url":null,"abstract":"An MOD-made BaTiO3 (BT) thin film was prepared for investigating the relation between its ferroelectric properties and the behavior of resistive hysteresis. For the ferroelectric 110 nm-thickness BT film, its coercive field is observed to relate quantitatively to the characteristics of resistive hysteresis, where the current on/off ratio is obtained as 1-2 orders of magnitude. We consider that the ferroelectricity in the film makes a different type of behavior in resistive hysteresis and is effective for improving the behavior.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134452162","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-19DOI: 10.1109/IMFEDK.2014.6867062
G. Wakimura, Y. Yamauchi, T. Matsuoka, Y. Kamakura
We investigate the mechanism of off-leakage current in InGaZnO thin-film transistors using a two dimensional device simulator. In order to reproduce the magnitude of experimental data, deep donor-like trap states probably originating from the oxygen vacancies are introduced in IGZO channel, which significantly affect the off-leakage current. It is shown that the pinning effect of the channel potential causes the plateau behavior of Id-Vg characteristics in off-state region, depending on the amount and depth of the deep states.
{"title":"Mechanism of off-leakage current in InGaZnO thin-film transistors","authors":"G. Wakimura, Y. Yamauchi, T. Matsuoka, Y. Kamakura","doi":"10.1109/IMFEDK.2014.6867062","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867062","url":null,"abstract":"We investigate the mechanism of off-leakage current in InGaZnO thin-film transistors using a two dimensional device simulator. In order to reproduce the magnitude of experimental data, deep donor-like trap states probably originating from the oxygen vacancies are introduced in IGZO channel, which significantly affect the off-leakage current. It is shown that the pinning effect of the channel potential causes the plateau behavior of Id-Vg characteristics in off-state region, depending on the amount and depth of the deep states.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133872808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-19DOI: 10.1109/IMFEDK.2014.6867070
T. Hayashi, J. Liang, S. Nishida, N. Shigekawa, M. Arai
The effects of annealing on n-Si/n-4H-SiC junctions made by the surface activated bonding were investigated. Both the forward and reverse characteristics were improved by annealing at higher temperatures.
{"title":"Improvement in elecrical properties in SAB-based n+-Si/n-4H-SiC junctions by annealing","authors":"T. Hayashi, J. Liang, S. Nishida, N. Shigekawa, M. Arai","doi":"10.1109/IMFEDK.2014.6867070","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867070","url":null,"abstract":"The effects of annealing on n-Si/n-4H-SiC junctions made by the surface activated bonding were investigated. Both the forward and reverse characteristics were improved by annealing at higher temperatures.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122091415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-19DOI: 10.1109/IMFEDK.2014.6867060
Takuma Kobayashi, J. Suda, T. Kimoto
The conduction-type dependent thermal oxidation rate in SiC was discovered. The oxidation was performed for SiC(0001) with nitrogen doping (n-type) in the range from 2.0×1016 cm-3 to 1.0×1019 cm-3, and aluminum doping (p-type) in the range from 2.0×1015 cm-3 to 1.0×1019 cm-3, exhibiting a clear dependence. For n-type SiC the oxide thickness increases for higher doping density, and for p-type the thickness decreases. Note that in the case of Si oxidation, there exists very little difference of oxidation rate between the conduction types in such low doping density, and the dependence is peculiar to SiC. The authors speculate the difference originates from the difference in carrier (electron/hole) density during the oxidation, which can reasonably explain the difference in the oxidation rate between Si and SiC.
{"title":"Conduction-type dependence of thermal oxidation rate on SiC(0001)","authors":"Takuma Kobayashi, J. Suda, T. Kimoto","doi":"10.1109/IMFEDK.2014.6867060","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867060","url":null,"abstract":"The conduction-type dependent thermal oxidation rate in SiC was discovered. The oxidation was performed for SiC(0001) with nitrogen doping (n-type) in the range from 2.0×10<sup>16</sup> cm<sup>-3</sup> to 1.0×10<sup>19</sup> cm<sup>-3</sup>, and aluminum doping (p-type) in the range from 2.0×10<sup>15</sup> cm<sup>-3</sup> to 1.0×10<sup>19</sup> cm<sup>-3</sup>, exhibiting a clear dependence. For n-type SiC the oxide thickness increases for higher doping density, and for p-type the thickness decreases. Note that in the case of Si oxidation, there exists very little difference of oxidation rate between the conduction types in such low doping density, and the dependence is peculiar to SiC. The authors speculate the difference originates from the difference in carrier (electron/hole) density during the oxidation, which can reasonably explain the difference in the oxidation rate between Si and SiC.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130420680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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