Pub Date : 2014-06-19DOI: 10.1109/IMFEDK.2014.6867078
K. Takemura, M. Morimoto, S. Nishida, J. Liang, N. Shigekawa
Si/mesa-etched Si p-n junction was fabricated by the reactive ion etching and the surface activated bonding. The SEM observation of their cross section indicated that the height of the mesa was approximately 13 μm. Their capacitance-voltage and current-voltage characteristics were also measured.
{"title":"Fabrication and characterization of Si/ ∼10-μm mesa-etched Si junctions by surface activated bonding","authors":"K. Takemura, M. Morimoto, S. Nishida, J. Liang, N. Shigekawa","doi":"10.1109/IMFEDK.2014.6867078","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867078","url":null,"abstract":"Si/mesa-etched Si p-n junction was fabricated by the reactive ion etching and the surface activated bonding. The SEM observation of their cross section indicated that the height of the mesa was approximately 13 μm. Their capacitance-voltage and current-voltage characteristics were also measured.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129672947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-19DOI: 10.1109/IMFEDK.2014.6867081
H. Kunitake, K. Takano, M. Motoyoshi, K. Katayama, S. Amakawa, T. Yoshida, M. Fujishima
A CMOS transmission line-to-waveguide transitions with a patch antenna for a WR3 waveguide (220-325 GHz) was designed using an electromagnetic-field simulator. The position of inserting the antenna to the waveguide and the size of the antenna were optimized to realize a low insertion loss and a wide bandwidth. As a result, an insertion loss of 0.9 dB and a 3-dB bandwidth of 120GHz were achieved.
{"title":"Design of millimeter-wave CMOS transmission-line-to-waveguide transitions","authors":"H. Kunitake, K. Takano, M. Motoyoshi, K. Katayama, S. Amakawa, T. Yoshida, M. Fujishima","doi":"10.1109/IMFEDK.2014.6867081","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867081","url":null,"abstract":"A CMOS transmission line-to-waveguide transitions with a patch antenna for a WR3 waveguide (220-325 GHz) was designed using an electromagnetic-field simulator. The position of inserting the antenna to the waveguide and the size of the antenna were optimized to realize a low insertion loss and a wide bandwidth. As a result, an insertion loss of 0.9 dB and a 3-dB bandwidth of 120GHz were achieved.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126380062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-19DOI: 10.1109/IMFEDK.2014.6867052
K. Fujii, S. Muraoka, S. Omatu, M. Yano
Thermal conductivity λ of gases was successfully measured by a simple steady state method using a microbridge type MEMS sensor fabricated on a Si substrate. The sensor consisted of a hot wire with two adjacent thermocouples on the surface of a SiO2 microbridge. The temperature increase of the microbridge was measured by supplying step-like electrical power Q to the hot wire. Due to the small heat capacity of the microbridge, the temperature increased to a saturated value ΔT within several tens of millisecond. In moving gas, the difference of the ΔT between upstream and downstream thermocouples gives the flow velocity. In static gas, this difference intrinsically becomes zero, and the heat flow QG from the hot wire to the surrounding gas is calculated using the Q to yield the same ΔT for different gases with known λ. Once QG is obtained, the λ of any unknown gases can be estimated by measuring the Q to yield the same ΔT.
{"title":"Characteristics of a microbridge type MEMS sensor for the thermal conductivity measurement of gases by a steady state method","authors":"K. Fujii, S. Muraoka, S. Omatu, M. Yano","doi":"10.1109/IMFEDK.2014.6867052","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867052","url":null,"abstract":"Thermal conductivity λ of gases was successfully measured by a simple steady state method using a microbridge type MEMS sensor fabricated on a Si substrate. The sensor consisted of a hot wire with two adjacent thermocouples on the surface of a SiO2 microbridge. The temperature increase of the microbridge was measured by supplying step-like electrical power Q to the hot wire. Due to the small heat capacity of the microbridge, the temperature increased to a saturated value ΔT within several tens of millisecond. In moving gas, the difference of the ΔT between upstream and downstream thermocouples gives the flow velocity. In static gas, this difference intrinsically becomes zero, and the heat flow QG from the hot wire to the surrounding gas is calculated using the Q to yield the same ΔT for different gases with known λ. Once QG is obtained, the λ of any unknown gases can be estimated by measuring the Q to yield the same ΔT.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116006358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-19DOI: 10.1109/IMFEDK.2014.6867088
Chaiyanan Kulchaisit, M. Fujii, Y. Ueoka, J. Bermundo, M. Horita, Y. Ishikawa, Y. Uraoka
We investigate the influence of polymer passivation on amorphous Indium Gallium Zinc Oxide (a-IGZO) TFT reliability. We made photosensitive siloxane passivation layer on bottom-gate type a-IGZO TFTs with SiO2/Si substrate. For photosensitive materials, contact holes can be formed by UV photolithography technique without plasma etching process, leading to serious damage to the channel layer. The samples with and without passivation layer were tested in terms of the stability during the positive bias stress (PBS; Vgs = 20 V) for 1000 sec. The stability of a-IGZO TFTs was improved by using the photo-sensitive siloxane passivation layer.
{"title":"Reliability of bottom gate amorphous InGaZnO thin-film transistors with siloxane passivation layer","authors":"Chaiyanan Kulchaisit, M. Fujii, Y. Ueoka, J. Bermundo, M. Horita, Y. Ishikawa, Y. Uraoka","doi":"10.1109/IMFEDK.2014.6867088","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867088","url":null,"abstract":"We investigate the influence of polymer passivation on amorphous Indium Gallium Zinc Oxide (a-IGZO) TFT reliability. We made photosensitive siloxane passivation layer on bottom-gate type a-IGZO TFTs with SiO2/Si substrate. For photosensitive materials, contact holes can be formed by UV photolithography technique without plasma etching process, leading to serious damage to the channel layer. The samples with and without passivation layer were tested in terms of the stability during the positive bias stress (PBS; Vgs = 20 V) for 1000 sec. The stability of a-IGZO TFTs was improved by using the photo-sensitive siloxane passivation layer.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127035640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-19DOI: 10.1109/IMFEDK.2014.6867073
Takahiro Yamaguchi, Yoshinori Sunaga, M. Haruta, T. Noda, K. Sasagawa, T. Tokuda, J. Ohta
We developed and evaluated a miniaturized CMOS image sensor with self-reset function in order to improve signal-to-noise ratio (SNR) of an implantable imaging device. The sensor is capable to image under high intensity illumination where the peak SNR determined by the shot-noise is increased. The pixel size is 15-μm square, which is as small as neural cells and acceptable for implantable image sensor. With illumination of 1.7 × 10-3 W/cm2, and a frame rate of approximately 230 fps, SNR over 60 dB was achieved.
{"title":"Noise performance of an implantable self-reset CMOS image sensor","authors":"Takahiro Yamaguchi, Yoshinori Sunaga, M. Haruta, T. Noda, K. Sasagawa, T. Tokuda, J. Ohta","doi":"10.1109/IMFEDK.2014.6867073","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867073","url":null,"abstract":"We developed and evaluated a miniaturized CMOS image sensor with self-reset function in order to improve signal-to-noise ratio (SNR) of an implantable imaging device. The sensor is capable to image under high intensity illumination where the peak SNR determined by the shot-noise is increased. The pixel size is 15-μm square, which is as small as neural cells and acceptable for implantable image sensor. With illumination of 1.7 × 10-3 W/cm2, and a frame rate of approximately 230 fps, SNR over 60 dB was achieved.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114129746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-19DOI: 10.1109/IMFEDK.2014.6867045
H. Tsuchiya
We discuss the impact of quantum transport and atomistic effects on nano-MOS transistors using computer simulations. We stress the importance of understanding carrier transport at the atomic level to utilize emerging device technologies.
{"title":"Understanding carrier transport in the ultimate physical scaling limit of MOSFETs","authors":"H. Tsuchiya","doi":"10.1109/IMFEDK.2014.6867045","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867045","url":null,"abstract":"We discuss the impact of quantum transport and atomistic effects on nano-MOS transistors using computer simulations. We stress the importance of understanding carrier transport at the atomic level to utilize emerging device technologies.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114773130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-19DOI: 10.1109/IMFEDK.2014.6867048
K. Okamoto, J. Fujita, Masaki Ishikawa, T. Hattori
We demonstrate in this paper that it is possible to operate a certain bipolar transistor as an amplifier using only the emitter and base without using the collector. This study was performed based on the novel hypothesis that the bipolar transistor works by the internal photovoltaic effect.
{"title":"Original amplifier using only emitter and base of a Si bipolar transistor","authors":"K. Okamoto, J. Fujita, Masaki Ishikawa, T. Hattori","doi":"10.1109/IMFEDK.2014.6867048","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867048","url":null,"abstract":"We demonstrate in this paper that it is possible to operate a certain bipolar transistor as an amplifier using only the emitter and base without using the collector. This study was performed based on the novel hypothesis that the bipolar transistor works by the internal photovoltaic effect.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123363587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-19DOI: 10.1109/IMFEDK.2014.6867089
Kahori Kise, M. Fujii, S. Tomai, Y. Ueoka, H. Yamazaki, Satoshi Urakawa, K. Yano, Dapeng Wang, M. Furuta, M. Horita, Y. Ishikawa, Y. Uraoka
Degradation by Joule heating of the thin-film transistors (TFTs) is one of the important issues for realizing next-generation displays. We have investigated the thermal distribution on the channel region of transparent amorphous oxide semiconductor TFT in pulse operation using an infrared imaging system. We also discussed the relationship between the self-heating temperature and the degradation.
{"title":"Analysis of heating phenomenon in oxide thin-film transistor under pulse voltage stress","authors":"Kahori Kise, M. Fujii, S. Tomai, Y. Ueoka, H. Yamazaki, Satoshi Urakawa, K. Yano, Dapeng Wang, M. Furuta, M. Horita, Y. Ishikawa, Y. Uraoka","doi":"10.1109/IMFEDK.2014.6867089","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867089","url":null,"abstract":"Degradation by Joule heating of the thin-film transistors (TFTs) is one of the important issues for realizing next-generation displays. We have investigated the thermal distribution on the channel region of transparent amorphous oxide semiconductor TFT in pulse operation using an infrared imaging system. We also discussed the relationship between the self-heating temperature and the degradation.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129155040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-19DOI: 10.1109/IMFEDK.2014.6867066
K. Kimura, K. Hosotani, T. Ito, H. Shimoyama, T. Sakamoto, M. Mori, K. Maezawa
This paper discusses the characteristics of the InSb/Si heterojunctions. Thin epitaxial layers of the InSb were grown on p-Si substrate by using the surface reconstruction controlled epitaxy. This epitaxial growth technique permits us to grow high quality InSb on Si (111) surface. The n-InSb/p-Si heterojunction pn diodes were fabricated with these samples, and characterized by current-voltage, and capacitance-voltage measurements. The conduction and valence band discontinuities were estimated from these results, and they were discussed compared to those obtained from the electron affinity rule.
{"title":"Electrical characterization of n+-InSb/p-Si heterojunctions grwon by surface reconstruction controlled epitaxy","authors":"K. Kimura, K. Hosotani, T. Ito, H. Shimoyama, T. Sakamoto, M. Mori, K. Maezawa","doi":"10.1109/IMFEDK.2014.6867066","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867066","url":null,"abstract":"This paper discusses the characteristics of the InSb/Si heterojunctions. Thin epitaxial layers of the InSb were grown on p-Si substrate by using the surface reconstruction controlled epitaxy. This epitaxial growth technique permits us to grow high quality InSb on Si (111) surface. The n-InSb/p-Si heterojunction pn diodes were fabricated with these samples, and characterized by current-voltage, and capacitance-voltage measurements. The conduction and valence band discontinuities were estimated from these results, and they were discussed compared to those obtained from the electron affinity rule.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"194 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130053199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-19DOI: 10.1109/IMFEDK.2014.6867064
Y. Sun, T. Maemoto, S. Sasa
We report the fabrication and characterization of fully transparent zinc oxide (ZnO) thin-film transistors (TFTs) by using low resistivity transparent conducting Al-doped ZnO (AZO) thin-films. The AZO thin-films were grown by pulsed laser deposition (PLD) at room temperature. The deposition conditions of AZO layers by PLD were optimized for a transparent electrode. We succeeded in fabricating transparent ZnO-TFTs on glass substrates. A ZnO-TFT with 3-μm-long gate device exhibits a transconductance of 150 μS/mm and an ON/OFF ratio of 6.6×106.
{"title":"Fully transparent ZnO thin-film transistors using conducting AZO films fabricated at room temperature","authors":"Y. Sun, T. Maemoto, S. Sasa","doi":"10.1109/IMFEDK.2014.6867064","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867064","url":null,"abstract":"We report the fabrication and characterization of fully transparent zinc oxide (ZnO) thin-film transistors (TFTs) by using low resistivity transparent conducting Al-doped ZnO (AZO) thin-films. The AZO thin-films were grown by pulsed laser deposition (PLD) at room temperature. The deposition conditions of AZO layers by PLD were optimized for a transparent electrode. We succeeded in fabricating transparent ZnO-TFTs on glass substrates. A ZnO-TFT with 3-μm-long gate device exhibits a transconductance of 150 μS/mm and an ON/OFF ratio of 6.6×106.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128557619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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