Pub Date : 2014-06-19DOI: 10.1109/IMFEDK.2014.6867097
Y. Chiang, Jeng-Rern Yang
This paper presents a dual channel switched RF-front-end beamformer to solve the severe interference problem that affects the LTE small-cell base stations. The beamformer system uses new type of hybrid phase shifter that situated at a later stage of the low-noise amplifier. The proposed system has four cases, and each can generate two opposite, non-overlapping coverage radio beams. Thus, the system can receive signals through two independent channels, either at the same frequency or at different frequencies.
{"title":"A dual channel switched RF beamformer for LTE small cell base station receiver","authors":"Y. Chiang, Jeng-Rern Yang","doi":"10.1109/IMFEDK.2014.6867097","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867097","url":null,"abstract":"This paper presents a dual channel switched RF-front-end beamformer to solve the severe interference problem that affects the LTE small-cell base stations. The beamformer system uses new type of hybrid phase shifter that situated at a later stage of the low-noise amplifier. The proposed system has four cases, and each can generate two opposite, non-overlapping coverage radio beams. Thus, the system can receive signals through two independent channels, either at the same frequency or at different frequencies.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121509811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-19DOI: 10.1109/IMFEDK.2014.6867093
A. Shibata, Keiji Watanabe, Takuya Sato, H. Kotaki, P. Schuele, M. A. Crowder, Changqing Zhan, J. Hartzell, R. Nakatani
We demonstrate the orientation-controlled dielectrophoretic alignment of asymmetric Si microrods on a glass substrate with an asymmetric pair of electrodes. By applying AC bias to the electrodes, over 80% of the Si microrods align on the electrode pair so that a particular end of the microrod relates to a certain part of the electrode; the thick and thin ends overlap the thick and thin electrodes, respectively. Furthermore, the orientation of the top and bottom face of the Si microrod is also controllable when the thicknesses of the dielectric film on the top and bottom faces are different.
{"title":"Orientation-controlled dielectrophoretic alignment of silicon microrod on a substrate with high positional accuracy","authors":"A. Shibata, Keiji Watanabe, Takuya Sato, H. Kotaki, P. Schuele, M. A. Crowder, Changqing Zhan, J. Hartzell, R. Nakatani","doi":"10.1109/IMFEDK.2014.6867093","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867093","url":null,"abstract":"We demonstrate the orientation-controlled dielectrophoretic alignment of asymmetric Si microrods on a glass substrate with an asymmetric pair of electrodes. By applying AC bias to the electrodes, over 80% of the Si microrods align on the electrode pair so that a particular end of the microrod relates to a certain part of the electrode; the thick and thin ends overlap the thick and thin electrodes, respectively. Furthermore, the orientation of the top and bottom face of the Si microrod is also controllable when the thicknesses of the dielectric film on the top and bottom faces are different.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121579794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-19DOI: 10.1109/IMFEDK.2014.6867065
S. Ohi, T. Kakegami, H. Tokuda, M. Kuzuhara
This paper describes results of DC characterization in AlGaN/GaN HEMTs passivated with sputter-deposited SiO2, SiN or their multilayered dielectric films. The device with SiO2 passivation exhibited low on-resistance and high breakdown voltage compared to the SiN-passivated device. However, the gate leakage current of the SiO2-passivated device was higher by one order of magnitude than that of the SiN-passivated one. The newly developed SiN/SiO2 multilayer-passivated device exhibited much improved characteristics in leakage current and breakdown voltage.
{"title":"Effect of passivation films on DC characteristics of AlGaN/GaN HEMT","authors":"S. Ohi, T. Kakegami, H. Tokuda, M. Kuzuhara","doi":"10.1109/IMFEDK.2014.6867065","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867065","url":null,"abstract":"This paper describes results of DC characterization in AlGaN/GaN HEMTs passivated with sputter-deposited SiO2, SiN or their multilayered dielectric films. The device with SiO2 passivation exhibited low on-resistance and high breakdown voltage compared to the SiN-passivated device. However, the gate leakage current of the SiO2-passivated device was higher by one order of magnitude than that of the SiN-passivated one. The newly developed SiN/SiO2 multilayer-passivated device exhibited much improved characteristics in leakage current and breakdown voltage.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121812505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-19DOI: 10.1109/IMFEDK.2014.6867086
H. Okumura
The importance of power electronics innovation in the future human society and related technology roadmap is presented. Based on the roadmap, recent progress in widegap semiconductor power electronics is reviewed, especially focused on Silicon Carbide (SiC) technology [1-3].
{"title":"Power electronics innovation by Silicon Carbide power semiconductor devices","authors":"H. Okumura","doi":"10.1109/IMFEDK.2014.6867086","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867086","url":null,"abstract":"The importance of power electronics innovation in the future human society and related technology roadmap is presented. Based on the roadmap, recent progress in widegap semiconductor power electronics is reviewed, especially focused on Silicon Carbide (SiC) technology [1-3].","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115841823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-19DOI: 10.1109/IMFEDK.2014.6867061
T. Kakegami, S. Ohi, K. P. Sengendo, H. Tokuda, M. Kuzuhara
This paper describes comparative study of current collapse in AlGaN/GaN high-electron-mobility transistors (HEMTs) passivated with sputter-deposited SiO2 and SiNx dielectrics. The pulsed I-V measurements are employed to characterize switching response of the devices. It is found that the degree of current collapse for the SiNx-passivated device is superior to that for the SiO2-passivated device.
{"title":"Study of current collapse in AlGaN/GaN HEMTs passivated with sputter-deposited SiO2 and SiNx","authors":"T. Kakegami, S. Ohi, K. P. Sengendo, H. Tokuda, M. Kuzuhara","doi":"10.1109/IMFEDK.2014.6867061","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867061","url":null,"abstract":"This paper describes comparative study of current collapse in AlGaN/GaN high-electron-mobility transistors (HEMTs) passivated with sputter-deposited SiO2 and SiNx dielectrics. The pulsed I-V measurements are employed to characterize switching response of the devices. It is found that the degree of current collapse for the SiNx-passivated device is superior to that for the SiO2-passivated device.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114894064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-19DOI: 10.1109/IMFEDK.2014.6867069
T. Mitsueda, T. Sakamoto, H. Shimoyama, M. Mori, K. Maezawa
This paper discusses characteristics of the InSb films on Ge substrate. To grow high quality InSb films on Ge substrate, we tried to optimize the growth conditions. We carried out the direct growth of the InSb films on Ge(111) substrate by using two-step growth procedure. At first, we studied the effect of the growth temperature and thickness of the first layer.
{"title":"Heteroepitaxial growth of InSb thin films on a Ge(111) substrate","authors":"T. Mitsueda, T. Sakamoto, H. Shimoyama, M. Mori, K. Maezawa","doi":"10.1109/IMFEDK.2014.6867069","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867069","url":null,"abstract":"This paper discusses characteristics of the InSb films on Ge substrate. To grow high quality InSb films on Ge substrate, we tried to optimize the growth conditions. We carried out the direct growth of the InSb films on Ge(111) substrate by using two-step growth procedure. At first, we studied the effect of the growth temperature and thickness of the first layer.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122623896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-19DOI: 10.1109/IMFEDK.2014.6867082
Hiroshi Adachi, M. Motoyoshi, K. Takano, K. Katayama, S. Amakawa, T. Yoshida, M. Fujishima
This paper concerns maximizing the conversion gain of a CMOS push-push doubler, in which the drains of a pair of differentially driven MOSFETs are tied together. We propose to insert transmission lines, which act as resonators at the fundamental frequency, between the drains of the MOSFETs. In the simulation of the proposed circuit, it achieved an output power improvement of 2.2 dB at the 0 dBm input power.
{"title":"Design of CMOS resonating push-push frequency doubler","authors":"Hiroshi Adachi, M. Motoyoshi, K. Takano, K. Katayama, S. Amakawa, T. Yoshida, M. Fujishima","doi":"10.1109/IMFEDK.2014.6867082","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867082","url":null,"abstract":"This paper concerns maximizing the conversion gain of a CMOS push-push doubler, in which the drains of a pair of differentially driven MOSFETs are tied together. We propose to insert transmission lines, which act as resonators at the fundamental frequency, between the drains of the MOSFETs. In the simulation of the proposed circuit, it achieved an output power improvement of 2.2 dB at the 0 dBm input power.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123955356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-19DOI: 10.1109/IMFEDK.2014.6867063
S. Kodama, H. Tokuda, M. Kuzuhara
Interface properties have been investigated for n-GaN MIS diodes. ZrO2/Al2O3 laminated films were used as a gate insulator with varying the deposition sequence of each layer. It was found that the interface state density was decreased with increasing the fraction of Al2O3, and the energy level of the interface state became shallow with increasing the annealing temperature.
{"title":"Interface properties of n-GaN MIS diodes with ZrO2/Al2O3 laminated films as a gate insulator","authors":"S. Kodama, H. Tokuda, M. Kuzuhara","doi":"10.1109/IMFEDK.2014.6867063","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867063","url":null,"abstract":"Interface properties have been investigated for n-GaN MIS diodes. ZrO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> laminated films were used as a gate insulator with varying the deposition sequence of each layer. It was found that the interface state density was decreased with increasing the fraction of Al<sub>2</sub>O<sub>3</sub>, and the energy level of the interface state became shallow with increasing the annealing temperature.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"280 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123430835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-19DOI: 10.1109/IMFEDK.2014.6867077
Akito Yoshikawa, D. Tadokoro, Y. Yamaguchi, T. Matsuda, M. Kimura, T. Ozawa, Koji Aoki, C. Kuo
We have improved magnetic field sensitivities of poly-Si Hall devices by applying high voltages. We achieved the magnetic field sensitivity of 5.13 V/T by applying 580 V. This value is 1000 times higher than the previous magnetic field sensitivity.
{"title":"Magnetic field sensitivity of poly-Si Hall device improved by high voltage application","authors":"Akito Yoshikawa, D. Tadokoro, Y. Yamaguchi, T. Matsuda, M. Kimura, T. Ozawa, Koji Aoki, C. Kuo","doi":"10.1109/IMFEDK.2014.6867077","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867077","url":null,"abstract":"We have improved magnetic field sensitivities of poly-Si Hall devices by applying high voltages. We achieved the magnetic field sensitivity of 5.13 V/T by applying 580 V. This value is 1000 times higher than the previous magnetic field sensitivity.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133164479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-19DOI: 10.1109/IMFEDK.2014.6867091
Yasuo Takahashi, M. Arita
Structural changes of a ReRAM (resistive random access memory) during the resistive switching was successfully observed for the first time by in-situ TEM. We succeeded the observation for the three kinds of ReRAM devices with different ReRAM materials.
{"title":"In-situ TEM observation of ReRAM switching","authors":"Yasuo Takahashi, M. Arita","doi":"10.1109/IMFEDK.2014.6867091","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867091","url":null,"abstract":"Structural changes of a ReRAM (resistive random access memory) during the resistive switching was successfully observed for the first time by in-situ TEM. We succeeded the observation for the three kinds of ReRAM devices with different ReRAM materials.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115716868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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