Pub Date : 2014-06-19DOI: 10.1109/IMFEDK.2014.6867071
A. Matsumura, Takahiro Fuchiya, Y. Maeda, T. Kadonome, Takumi Tanaka, T. Matsuda, M. Kimura
We have evaluated an artificial retina using thin-film devices driven by wireless power supply. It is found that the illumination profile can be correctly detected as the output voltage profile even if it is driven using unstable wireless power supply. Particularly in this presentation, we confirm correct working of pattern recognition.
{"title":"Artificial retina using thin-film devices driven by wireless power supply — Working confirmation of pattern recognition","authors":"A. Matsumura, Takahiro Fuchiya, Y. Maeda, T. Kadonome, Takumi Tanaka, T. Matsuda, M. Kimura","doi":"10.1109/IMFEDK.2014.6867071","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867071","url":null,"abstract":"We have evaluated an artificial retina using thin-film devices driven by wireless power supply. It is found that the illumination profile can be correctly detected as the output voltage profile even if it is driven using unstable wireless power supply. Particularly in this presentation, we confirm correct working of pattern recognition.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115031666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-19DOI: 10.1109/IMFEDK.2014.6867067
K. Nishiguchi, T. Hashizume
Using a dual-gate transistor structure, we have evaluated the effect of off-bias-stress spatially induced surface charging at the AlGaN/GaN surface. Pulsed voltage stress on the drain access region led only to increase in the on-resistance, whereas the stress on the source region additionally decreased the saturation drain current. In addition, significant surface charging in the access region resulted in a threshold voltage shift. The 2D potential simulation indicated that surface negative charges modulate the potential distribution near the gate edge. It was also found that such surface charging can extend as far as 0.5 μm from the stressing gate edge.
{"title":"Surface charging effects on current stability of AlGaN/GaN HEMTs","authors":"K. Nishiguchi, T. Hashizume","doi":"10.1109/IMFEDK.2014.6867067","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867067","url":null,"abstract":"Using a dual-gate transistor structure, we have evaluated the effect of off-bias-stress spatially induced surface charging at the AlGaN/GaN surface. Pulsed voltage stress on the drain access region led only to increase in the on-resistance, whereas the stress on the source region additionally decreased the saturation drain current. In addition, significant surface charging in the access region resulted in a threshold voltage shift. The 2D potential simulation indicated that surface negative charges modulate the potential distribution near the gate edge. It was also found that such surface charging can extend as far as 0.5 μm from the stressing gate edge.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"48 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114032198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-19DOI: 10.1109/IMFEDK.2014.6867053
Tatsuya Yamana, N. Mori
We have performed non-equilibrium Green's function simulation of n-type ultra-small V-groove junctionless field-effect transistors (JL-FETs) on a silicon-on-insulator substrate under the ballistic condition. We find that the ON-current is determined mainly by the gap thickness and the subthreshold swing becomes the minimum at a gap-thickness of about 0.6 nm for the gate-length of 7.2 nm.
{"title":"Quantum transport simulation of ultra-small V-groove junctionless transistors","authors":"Tatsuya Yamana, N. Mori","doi":"10.1109/IMFEDK.2014.6867053","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867053","url":null,"abstract":"We have performed non-equilibrium Green's function simulation of n-type ultra-small V-groove junctionless field-effect transistors (JL-FETs) on a silicon-on-insulator substrate under the ballistic condition. We find that the ON-current is determined mainly by the gap thickness and the subthreshold swing becomes the minimum at a gap-thickness of about 0.6 nm for the gate-length of 7.2 nm.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133570312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-19DOI: 10.1109/IMFEDK.2014.6867092
H. Okazaki, S. Sawada, T. Matsuda, M. Kimura
Artificial muscles employing soft actuators are recently promising for many applications, and ionic polymer-metal composites (IPMCs) are particularly remarkable. In this research, we have developed soft actuators using IPMCs driven with ionic liquid. It is expected that the bending ability continues for a long time regardless of the atmospheric humidity because of the non-volatileness.
{"title":"Soft actuator using ionic polymer-metal composite driven with ionic liquid","authors":"H. Okazaki, S. Sawada, T. Matsuda, M. Kimura","doi":"10.1109/IMFEDK.2014.6867092","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867092","url":null,"abstract":"Artificial muscles employing soft actuators are recently promising for many applications, and ionic polymer-metal composites (IPMCs) are particularly remarkable. In this research, we have developed soft actuators using IPMCs driven with ionic liquid. It is expected that the bending ability continues for a long time regardless of the atmospheric humidity because of the non-volatileness.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133511939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-19DOI: 10.1109/IMFEDK.2014.6867087
Tatsuya Yanagi, H. Otake, K. Nakahara
This paper focuses on revealing the mechanism of parasitic oscillation observed when SiC MOSFETs (metal-oxide-semiconductor field-effect transistors) operate in halfbridge configuration. The relatively large parasitic feed-back capacitance (Cgd) of SiC MOSFETs, especially if the transistors have a low threshold voltage, enhances unintentional turn-on of the device, entailing parasitic oscillation in a half bridge circuit. The wide-band gap semiconductor power device should possess a structure of as low Cgd as possible in addition to a device-specific circuit design, if the general advantage of wide band-gap power devices is utilized to facilitate high-speed switching.
{"title":"The mechanism of parasitic oscillation in a half bridge circuit including wide band-gap semiconductor devices","authors":"Tatsuya Yanagi, H. Otake, K. Nakahara","doi":"10.1109/IMFEDK.2014.6867087","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867087","url":null,"abstract":"This paper focuses on revealing the mechanism of parasitic oscillation observed when SiC MOSFETs (metal-oxide-semiconductor field-effect transistors) operate in halfbridge configuration. The relatively large parasitic feed-back capacitance (Cgd) of SiC MOSFETs, especially if the transistors have a low threshold voltage, enhances unintentional turn-on of the device, entailing parasitic oscillation in a half bridge circuit. The wide-band gap semiconductor power device should possess a structure of as low Cgd as possible in addition to a device-specific circuit design, if the general advantage of wide band-gap power devices is utilized to facilitate high-speed switching.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"437 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116014639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-19DOI: 10.1109/IMFEDK.2014.6867083
Rie Yamane, H. Iwasaki, Yoshiaki Dei, J. Cui, T. Matsuoka
This study proposes a capacitance detection circuit for on-chip microparticle manipulation. The designed circuit employs the charge-based capacitance measurement technique to convert a capacitance value to a digital output code. Experimental results reveal capacitance measurement within error of 4 fF.
{"title":"A capacitance detection circuit for on-chip microparticle manipulation","authors":"Rie Yamane, H. Iwasaki, Yoshiaki Dei, J. Cui, T. Matsuoka","doi":"10.1109/IMFEDK.2014.6867083","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867083","url":null,"abstract":"This study proposes a capacitance detection circuit for on-chip microparticle manipulation. The designed circuit employs the charge-based capacitance measurement technique to convert a capacitance value to a digital output code. Experimental results reveal capacitance measurement within error of 4 fF.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127277003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-19DOI: 10.1109/IMFEDK.2014.6867057
T. Ito, S. Sato, Y. Omura
This paper considers aspects of low-frequency noise in the inversion-channel SOI nMOSFET and the buried-channel SOI pMOSFET. Analyses suggest that the inversion channel is strongly influenced by interface traps, which also weakly influence the buried-channel. It is demonstrated that such aspects are significant in the subthreshold bias range.
{"title":"Characterization of noise behavior of ultrathin inversion-channel and buried-channel SOI MOSFETs in the subthreshold bias range","authors":"T. Ito, S. Sato, Y. Omura","doi":"10.1109/IMFEDK.2014.6867057","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867057","url":null,"abstract":"This paper considers aspects of low-frequency noise in the inversion-channel SOI nMOSFET and the buried-channel SOI pMOSFET. Analyses suggest that the inversion channel is strongly influenced by interface traps, which also weakly influence the buried-channel. It is demonstrated that such aspects are significant in the subthreshold bias range.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123557928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-02-06DOI: 10.1109/IMFEDK.2014.6867047
Yunjian Jiang, Y. Ishikawa, S. Yoshinaga, T. Honda, Y. Uraoka
In order to reduce the back-contact silicon solar cell manufacturing process cost, polysilazane solution is used to form SiO2 diffusion barrier layer in this study. The thickness and refractive index of SiO2 film is evaluated by spectroscopic ellipsometer measurement. Sheet resistance measurement and SIMS measurement revealed that polysilazane-derived SiO2 layer presents excellent barrier effect for boron and phosphorous diffusion process, while SiO2 deposited by plasma chemical vapor deposition is available for only phosphorous diffusion process.
{"title":"Development of solution-derived diffusion barrier layer for back-contact crystalline silicon solar cell","authors":"Yunjian Jiang, Y. Ishikawa, S. Yoshinaga, T. Honda, Y. Uraoka","doi":"10.1109/IMFEDK.2014.6867047","DOIUrl":"https://doi.org/10.1109/IMFEDK.2014.6867047","url":null,"abstract":"In order to reduce the back-contact silicon solar cell manufacturing process cost, polysilazane solution is used to form SiO2 diffusion barrier layer in this study. The thickness and refractive index of SiO2 film is evaluated by spectroscopic ellipsometer measurement. Sheet resistance measurement and SIMS measurement revealed that polysilazane-derived SiO2 layer presents excellent barrier effect for boron and phosphorous diffusion process, while SiO2 deposited by plasma chemical vapor deposition is available for only phosphorous diffusion process.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124999419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/imfedk.2014.6867054
Y. Goto, A. Hiroki, A. Matsuda, M. Nakamura, J. Yoon
This paper describes gate voltage dependence of channel length modulation for Ge p-channel MOSFETs. The gate voltage dependence of the channel length modulation is extracted from experimental current voltage characteristics. It is found that Ge p-channel MOSFETs show the gate voltage dependence of channel length modulation. To investigate the effects of the VGS dependence of λ on the current voltage characteristics, the analytical MOSFET model is compared with the experimental data. It is found that the VGS dependence of λ is essential in simulation of the current voltage characteristics for Ge p-channel MOSFETs.
{"title":"Gate voltage dependence of channel length modulation for Ge p-channel MOSFETs","authors":"Y. Goto, A. Hiroki, A. Matsuda, M. Nakamura, J. Yoon","doi":"10.1109/imfedk.2014.6867054","DOIUrl":"https://doi.org/10.1109/imfedk.2014.6867054","url":null,"abstract":"This paper describes gate voltage dependence of channel length modulation for Ge p-channel MOSFETs. The gate voltage dependence of the channel length modulation is extracted from experimental current voltage characteristics. It is found that Ge p-channel MOSFETs show the gate voltage dependence of channel length modulation. To investigate the effects of the VGS dependence of λ on the current voltage characteristics, the analytical MOSFET model is compared with the experimental data. It is found that the VGS dependence of λ is essential in simulation of the current voltage characteristics for Ge p-channel MOSFETs.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114797456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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