Pub Date : 2010-05-10DOI: 10.1109/IWJT.2010.5474987
Kun Gui, Paul-Chang Lin, Dong Ouyang, Jiwei Zhang, C. Xing
Co-Silicide provides lower contact resistance and better device performance, which is widely used in 0.18um and below technology. Typical Co-Salicide process is composed of Co and Ti/TiN capping layer deposition and two RTA (Rapid Thermal Anneal) process steps. The quality of silicide formation will directly influence its device performance. With the character of Co thin film, which is more sensitive to O2, H2O and other acid contaminations, the micro-contamination control is very critical during Co-silicide formation process steps. In this paper, the Co-Silicide poor formation mechanism is studied and some effective improvement methods are proposed.
co -硅化物具有更低的接触电阻和更好的器件性能，广泛应用于0.18um及以下工艺。典型的Co- salicide工艺由Co和Ti/TiN盖层沉积和两个RTA(快速热退火)工艺步骤组成。硅化物形成的质量将直接影响其器件的性能。由于Co薄膜对O2、H2O等酸性污染更为敏感，因此在Co硅化物形成过程中，微污染控制至关重要。本文对co -硅化物的不良形成机理进行了研究，并提出了一些有效的改善方法。
{"title":"Effective approaches to prevent ambient contaminations impact on the Cobalt Salicide process","authors":"Kun Gui, Paul-Chang Lin, Dong Ouyang, Jiwei Zhang, C. Xing","doi":"10.1109/IWJT.2010.5474987","DOIUrl":"https://doi.org/10.1109/IWJT.2010.5474987","url":null,"abstract":"Co-Silicide provides lower contact resistance and better device performance, which is widely used in 0.18um and below technology. Typical Co-Salicide process is composed of Co and Ti/TiN capping layer deposition and two RTA (Rapid Thermal Anneal) process steps. The quality of silicide formation will directly influence its device performance. With the character of Co thin film, which is more sensitive to O2, H2O and other acid contaminations, the micro-contamination control is very critical during Co-silicide formation process steps. In this paper, the Co-Silicide poor formation mechanism is studied and some effective improvement methods are proposed.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134604549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-10DOI: 10.1109/IWJT.2010.5474979
T. Nagayama, H. Onoda, M. Tanjyo, N. Hamamoto, S. Umisedo, Y. Koga, N. Maehara, Y. Kawamura, Y. Nakashima, Y. Hashino, M. Hashimoto, H. Yoshimi, S. Sezaki, N. Nagai
Phosphorus transient enhanced diffusion (TED) is caused by interstitial diffusion mechanism. It is important for the efficient suppression of phosphorus diffusion that some carbons could be located on lattice point in the initial stage of re-growth during annealing and trap interstitial Silicon. Carbon co-implantation after Germanium, pre-amorphization implantation (PAI) is applied for the applications of n+/p junction formation and the effects of Carbon co-implantation are reported. In our experiments it is shown that suppression of Phosphorus diffusion could be achieved with conventional rapid thermal annealing (RTA) by using cluster Carbon (C16Hx+, C7Hx+) co-implantation for the self-amrphization. Our experimental data suggests that cluster carbon co-implantation enable to suppress phosphorus diffusion without germanium pre-amorphous implantation. In this paper the characteristics of cluster Carbon co-implantation after RTA are introduced from experimental results which were obtained by secondary ion mass spectroscopy (SIMS) measurement, transmission electron microscopy (TEM) and sheet-resistance measurement.
{"title":"Suppression of phosphorus diffusion using cluster Carbon co-implantation","authors":"T. Nagayama, H. Onoda, M. Tanjyo, N. Hamamoto, S. Umisedo, Y. Koga, N. Maehara, Y. Kawamura, Y. Nakashima, Y. Hashino, M. Hashimoto, H. Yoshimi, S. Sezaki, N. Nagai","doi":"10.1109/IWJT.2010.5474979","DOIUrl":"https://doi.org/10.1109/IWJT.2010.5474979","url":null,"abstract":"Phosphorus transient enhanced diffusion (TED) is caused by interstitial diffusion mechanism. It is important for the efficient suppression of phosphorus diffusion that some carbons could be located on lattice point in the initial stage of re-growth during annealing and trap interstitial Silicon. Carbon co-implantation after Germanium, pre-amorphization implantation (PAI) is applied for the applications of n+/p junction formation and the effects of Carbon co-implantation are reported. In our experiments it is shown that suppression of Phosphorus diffusion could be achieved with conventional rapid thermal annealing (RTA) by using cluster Carbon (C16Hx+, C7Hx+) co-implantation for the self-amrphization. Our experimental data suggests that cluster carbon co-implantation enable to suppress phosphorus diffusion without germanium pre-amorphous implantation. In this paper the characteristics of cluster Carbon co-implantation after RTA are introduced from experimental results which were obtained by secondary ion mass spectroscopy (SIMS) measurement, transmission electron microscopy (TEM) and sheet-resistance measurement.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"158 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132746024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-10DOI: 10.1109/IWJT.2010.5474998
Y. Wang, Shaoyin Chen, M. Shen, Xiaoru Wang, Senquan Zhou, J. Hebb, D. Owen
A new dual-beam laser spike annealing (DB-LSA) technology is developed to expand the application space of non-melt laser annealing. In the standard LSA configuration, a single narrow laser beam is used to heat the wafer surface from substrate temperature to the peak annealing temperature close to silicon melt. In DB-LSA, a second wide laser beam is incorporated to preheat the wafer. The dual beam system offers flexibility in tuning the temperature and stress profiles. It also enables lower substrate temperature that is compatible with the middle of line applications. In this paper, we will discuss the new capabilities of DB-LSA. Implications on Rs-Xj scaling, defect curing and silicide formations will also be discussed.
{"title":"Dual beam laser spike annealing technology","authors":"Y. Wang, Shaoyin Chen, M. Shen, Xiaoru Wang, Senquan Zhou, J. Hebb, D. Owen","doi":"10.1109/IWJT.2010.5474998","DOIUrl":"https://doi.org/10.1109/IWJT.2010.5474998","url":null,"abstract":"A new dual-beam laser spike annealing (DB-LSA) technology is developed to expand the application space of non-melt laser annealing. In the standard LSA configuration, a single narrow laser beam is used to heat the wafer surface from substrate temperature to the peak annealing temperature close to silicon melt. In DB-LSA, a second wide laser beam is incorporated to preheat the wafer. The dual beam system offers flexibility in tuning the temperature and stress profiles. It also enables lower substrate temperature that is compatible with the middle of line applications. In this paper, we will discuss the new capabilities of DB-LSA. Implications on Rs-Xj scaling, defect curing and silicide formations will also be discussed.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115265289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-10DOI: 10.1109/IWJT.2010.5474966
Shouheng Xu, Qing Zhang
Back-gated graphene field-effect transistor (FET) with Carrier mobility values over 8000 cm2/Vs is fabricated. Contact resistances and carrier motilities are extracted from an established model. We investigate the asymmetry in its transfer characteristics and attribute it to the differences in contact resistances modulated by the back gate voltages and distinct mobility of electrons and holes. The experimental results are analyzed quantitatively and the mechanisms are discussed.
{"title":"Causes of asymmetry in graphene transfer characteristics","authors":"Shouheng Xu, Qing Zhang","doi":"10.1109/IWJT.2010.5474966","DOIUrl":"https://doi.org/10.1109/IWJT.2010.5474966","url":null,"abstract":"Back-gated graphene field-effect transistor (FET) with Carrier mobility values over 8000 cm2/Vs is fabricated. Contact resistances and carrier motilities are extracted from an established model. We investigate the asymmetry in its transfer characteristics and attribute it to the differences in contact resistances modulated by the back gate voltages and distinct mobility of electrons and holes. The experimental results are analyzed quantitatively and the mechanisms are discussed.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115748185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-10DOI: 10.1109/IWJT.2010.5474993
Hongyu Yu
In this paper, Schottky barrier height (SBH) lowering of Pt silicide/n-Si diodes is demonstrated empirically and we study its implications to Schottky-barrier (SB) source/drain p-FETs. We show that the hole SBH can be lowered through an image-force mechanism by increasing the n-Si substrate doping, which can lead to a substantial gain of the drive current in the long-channel bulk p-SBFETs. Numerical simulations show that the channel doping concentration is also critical for short-channel n- & p- SOI SBFETs performance.
本文实证地证明了硅化铂/n-Si二极管的肖特基势垒高度(SBH)降低，并研究了其对肖特基势垒(SB)源极/漏极p场效应管的影响。我们表明，通过增加n-Si衬底掺杂，可以通过像力机制降低空穴SBH，这可以导致长沟道体p- sbet中的驱动电流大幅增加。数值模拟表明，沟道掺杂浓度对短沟道n-和p- SOI sbfet的性能也至关重要。
{"title":"Substrate doping induced hole barrier lowering in PtSi/n-Si Schottky diode and its implication to PtSi source/drain SBFETs","authors":"Hongyu Yu","doi":"10.1109/IWJT.2010.5474993","DOIUrl":"https://doi.org/10.1109/IWJT.2010.5474993","url":null,"abstract":"In this paper, Schottky barrier height (SBH) lowering of Pt silicide/n-Si diodes is demonstrated empirically and we study its implications to Schottky-barrier (SB) source/drain p-FETs. We show that the hole SBH can be lowered through an image-force mechanism by increasing the n-Si substrate doping, which can lead to a substantial gain of the drive current in the long-channel bulk p-SBFETs. Numerical simulations show that the channel doping concentration is also critical for short-channel n- & p- SOI SBFETs performance.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121066078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-10DOI: 10.1109/IWJT.2010.5474974
T. Aoki, T. Seki, J. Matsuo
Molecular dynamics (MD) simulations of small boron clusters impacting on silicon (100) surface were carried out. The impacts of B10, B18 and B36 accelerated with 2keV, 3.6keV and 7.6keV (200eV per boron atom) showed characteristic irradiation effect, heavy mixing or amourphosization, and crater formation at the impact point. The MD results also suggested, when the incident energy per atom is several hundreds eV/atom and is kept constant for various cluster sizes, the depth profiles of implanted boron atoms and damage increases as the cluster size.
{"title":"MD simulation of small boron cluster implantation","authors":"T. Aoki, T. Seki, J. Matsuo","doi":"10.1109/IWJT.2010.5474974","DOIUrl":"https://doi.org/10.1109/IWJT.2010.5474974","url":null,"abstract":"Molecular dynamics (MD) simulations of small boron clusters impacting on silicon (100) surface were carried out. The impacts of B10, B18 and B36 accelerated with 2keV, 3.6keV and 7.6keV (200eV per boron atom) showed characteristic irradiation effect, heavy mixing or amourphosization, and crater formation at the impact point. The MD results also suggested, when the incident energy per atom is several hundreds eV/atom and is kept constant for various cluster sizes, the depth profiles of implanted boron atoms and damage increases as the cluster size.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127399184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-10DOI: 10.1109/IWJT.2010.5475000
K. Kuhn, Mark Y. Liu, H. Kennel
This paper explores the challenges facing the 22nm process generation and beyond. CMOS transistor architectures such as ultra-thin body, FinFET, and nanowire will be compared and contrasted. Mobility enhancements such as channel stress, alternative orientations, and exotic materials will be explored. Resistance challenges will be reviewed in relation to key process techniques such as silicidation, implantation and anneal. Capacitance challenges with traditional and new architectures will be discussed in light of new materials and processing techniques. The impact of new transistor architectures and enhanced channel materials on traditional junction engineering solutions will be summarized.
{"title":"Technology options for 22nm and beyond","authors":"K. Kuhn, Mark Y. Liu, H. Kennel","doi":"10.1109/IWJT.2010.5475000","DOIUrl":"https://doi.org/10.1109/IWJT.2010.5475000","url":null,"abstract":"This paper explores the challenges facing the 22nm process generation and beyond. CMOS transistor architectures such as ultra-thin body, FinFET, and nanowire will be compared and contrasted. Mobility enhancements such as channel stress, alternative orientations, and exotic materials will be explored. Resistance challenges will be reviewed in relation to key process techniques such as silicidation, implantation and anneal. Capacitance challenges with traditional and new architectures will be discussed in light of new materials and processing techniques. The impact of new transistor architectures and enhanced channel materials on traditional junction engineering solutions will be summarized.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121832405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-10DOI: 10.1109/IWJT.2010.5474909
K. Tsutsui, Norifumi Hoshino, Y. Nakagawa, Masaoki Tanaka, H. Nohira, K. Kakushima, P. Ahemt, Y. Sasaki, B. Mizuno, T. Hattori, H. Iwai
Chemical bonding states of doped impurities such as B, As, P and Sb in Si were analyzed by soft X-ray photoelectron spectroscopy (SXPES). A step-by-step shallow etching and Hall effect measurements were combined with the SXPES to investigate correlation between chemical bonding state and electrical activation, and to clarify depth profiles of concentration of activated and deactivated impurities in shallow junctions. The study of B doped layer revealed that one chemical bonding state is assined to activated B and the other two states are correlated with deactivated B, which probably form B clusters. On the other hand, two different chemical bonding states were detected for each donor type impurity (As, P and Sb), however, these two states could not be necessarily correlated with the electrically activated and deactivated atoms.
{"title":"Depth profiling of chemical bonding states of impurity atoms and their correlation with electrical activity in Si shallow junctions","authors":"K. Tsutsui, Norifumi Hoshino, Y. Nakagawa, Masaoki Tanaka, H. Nohira, K. Kakushima, P. Ahemt, Y. Sasaki, B. Mizuno, T. Hattori, H. Iwai","doi":"10.1109/IWJT.2010.5474909","DOIUrl":"https://doi.org/10.1109/IWJT.2010.5474909","url":null,"abstract":"Chemical bonding states of doped impurities such as B, As, P and Sb in Si were analyzed by soft X-ray photoelectron spectroscopy (SXPES). A step-by-step shallow etching and Hall effect measurements were combined with the SXPES to investigate correlation between chemical bonding state and electrical activation, and to clarify depth profiles of concentration of activated and deactivated impurities in shallow junctions. The study of B doped layer revealed that one chemical bonding state is assined to activated B and the other two states are correlated with deactivated B, which probably form B clusters. On the other hand, two different chemical bonding states were detected for each donor type impurity (As, P and Sb), however, these two states could not be necessarily correlated with the electrically activated and deactivated atoms.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128937459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-10DOI: 10.1109/IWJT.2010.5475009
H. Itokawa, K. Miyano, Y. Oshiki, H. Onoda, M. Nishigoori, I. Mizushima, K. Suguro
Since the lattice constant of silicon-carbon (Si:C) is smaller than that of Si, Si:C embedded in the source and drain (e-Si:C S/D) can induce tensile stress in the channel and improve the electron mobility of n-metal-oxide-semiconductor field-effect transistors (nMOSFETs). In this research, C ion cryo implantation and a metastable recrystallization schemes employed to achieve strained Si:C layers with a high substitutionally incorporated carbon concentration ([C]sub) at a high ratio of substitution, and a high doping activation were studied. we proposed the C cryo implantation for reduced implantation damage, the fast recrystallization by nonmelt laser annealing combined with solid phase epitaxy (SPE) annealing that promote Si regrowth in a high-C-concentration region, and the co-incorporation of phosphorus (P). These processes promoted markedly the recrystallization of C densely incorporated in an amorphous Si layer and realized e-Si:C S/D with high-crystallinity of strained Si:C layer while maintaining a high [C]sub at a high ratio of substitution with a high doping activation.
{"title":"Carbon incorporation into substitutional silicon site by carbon cryo ion implantation and metastable recrystallization annealing as stress technique in n-metal-oxide-semiconductor field-effect transistor","authors":"H. Itokawa, K. Miyano, Y. Oshiki, H. Onoda, M. Nishigoori, I. Mizushima, K. Suguro","doi":"10.1109/IWJT.2010.5475009","DOIUrl":"https://doi.org/10.1109/IWJT.2010.5475009","url":null,"abstract":"Since the lattice constant of silicon-carbon (Si:C) is smaller than that of Si, Si:C embedded in the source and drain (e-Si:C S/D) can induce tensile stress in the channel and improve the electron mobility of n-metal-oxide-semiconductor field-effect transistors (nMOSFETs). In this research, C ion cryo implantation and a metastable recrystallization schemes employed to achieve strained Si:C layers with a high substitutionally incorporated carbon concentration ([C]sub) at a high ratio of substitution, and a high doping activation were studied. we proposed the C cryo implantation for reduced implantation damage, the fast recrystallization by nonmelt laser annealing combined with solid phase epitaxy (SPE) annealing that promote Si regrowth in a high-C-concentration region, and the co-incorporation of phosphorus (P). These processes promoted markedly the recrystallization of C densely incorporated in an amorphous Si layer and realized e-Si:C S/D with high-crystallinity of strained Si:C layer while maintaining a high [C]sub at a high ratio of substitution with a high doping activation.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132389134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-10DOI: 10.1109/IWJT.2010.5474999
H. Kiyama, S. Kato, T. Aoyama, T. Onizawa, K. Ikeda, H. Kondo, K. Hashimoto, H. Murakawa, Toru Kuroiwa
Idea of a very short time annealing technology has evaluated in 1980s. Engineers tried to use Flash lamp, laser or some other lamps [1]. In 1990s, W-halogen lamp annealing replaced furnace annealing in activation and silicidation process. Thermal budget has reduced from minutes to seconds. Eager for Milli-second Annealing (MSA) really came out in 2000s. Since dopant diffusion and an activation ratio have been considered to be more critical obstacle in scaled down microstructure devices, FLA activation technology came into spotlight again [2–9]. A 65nm device was a first product which used Flash Lamp Annealing (FLA) in manufacturing. Today, milli-second process has become an indispensable method in device manufacturing. But device generation keeps proceeding 45nm, 32nm and so on. Furthermore, a new material like high-k/metal is selected as a latest device material. Difficulty in MSA for 32 and 22 generation devices is reported recently.
{"title":"Advanced Flash Lamp Annealing technology for 22nm and further device","authors":"H. Kiyama, S. Kato, T. Aoyama, T. Onizawa, K. Ikeda, H. Kondo, K. Hashimoto, H. Murakawa, Toru Kuroiwa","doi":"10.1109/IWJT.2010.5474999","DOIUrl":"https://doi.org/10.1109/IWJT.2010.5474999","url":null,"abstract":"Idea of a very short time annealing technology has evaluated in 1980s. Engineers tried to use Flash lamp, laser or some other lamps [1]. In 1990s, W-halogen lamp annealing replaced furnace annealing in activation and silicidation process. Thermal budget has reduced from minutes to seconds. Eager for Milli-second Annealing (MSA) really came out in 2000s. Since dopant diffusion and an activation ratio have been considered to be more critical obstacle in scaled down microstructure devices, FLA activation technology came into spotlight again [2–9]. A 65nm device was a first product which used Flash Lamp Annealing (FLA) in manufacturing. Today, milli-second process has become an indispensable method in device manufacturing. But device generation keeps proceeding 45nm, 32nm and so on. Furthermore, a new material like high-k/metal is selected as a latest device material. Difficulty in MSA for 32 and 22 generation devices is reported recently.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"167 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127096379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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