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Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)最新文献

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ESD protection design for RF integrated circuits: new challenges 射频集成电路ESD保护设计:新挑战
Albert Z. H. Wang, H. Feng, R. Zhan, Guang Chen, Q. Wu
The challenge in RF ESD protection circuit design, still a problem in definition, is to address the complex interactions between the ESD protection network and the circuit being protected in both directions. This paper discusses related key factors, e.g., switching and accidental triggering of ESD protection networks, as well as ESD-induced parasitic capacitive, resistive, noise coupling and self-generated noise effects. Evaluation techniques include S-parameter, Q-factor and overall specification examination. Low-parasitic compact structures are the solutions to RF ESD protection.
射频ESD保护电路设计的挑战仍然是一个定义上的问题,即如何解决ESD保护网络与被保护电路在两个方向上的复杂相互作用。本文讨论了ESD保护网络的开关和意外触发等相关关键因素,以及ESD诱导的寄生容性、电阻性、噪声耦合和自生噪声效应。评价技术包括s参数、q因子和总体规格考核。低寄生紧凑结构是射频ESD保护的解决方案。
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引用次数: 32
Delay and power model for current-mode signaling in deep submicron global interconnects 深亚微米全球互连中电流模式信号的延迟和功率模型
R. Bashirullah, Wentai Liu, R. Cavin
In this paper, closed-form expressions of delay and power dissipation based on the effective lumped element resistance and capacitance approximation of distributed RC lines are presented. A new closed-form solution of delay under step input excitation is developed, exhibiting an accuracy that is within 5% for a wide range of parameters. The usefulness of this solution is that both resistive and capacitive load termination is accurately modeled for use in current mode signaling. A new power dissipation model for current-mode signaling is developed to understand the design tradeoffs between current and voltage sensing. Based on these formulations, a comparison between voltage-mode repeater insertion technique and current-mode signaling over long global deep submicron interconnects is presented.
本文提出了基于有效集总元件电阻和电容近似的分布式RC线路延迟和功耗的封闭表达式。提出了一种新的阶跃输入激励下的时滞闭合解,在较宽的参数范围内,其精度在5%以内。该解决方案的有用之处在于,电阻性和容性负载终止都精确建模,以便在电流模式信号中使用。本文提出了一种新的电流模式信号的功耗模型,以理解电流和电压传感之间的设计权衡。基于这些公式,比较了电压模式中继器插入技术和电流模式信号在长全局深亚微米互连中的应用。
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引用次数: 31
A voice processing and control module for cable telephony applications 用于有线电话应用的语音处理和控制模块
J. Nabicht, Jeanne K. Pitz, P. Siniscalchi, C. Betty, Stephen Maggiotto, D. Richardson, S. M. DeSoto, Sucheendran Sridharan, S. Vemulapalli, Kenneth Downs, D. G. Gata, Ali K. Dweik, D. Guidry, Kyle D. Muskoff, Brandon Beckham, Glenn H. Westphal
An IF-baseband multi-chip module, fabricated in 3.3V 0.35/spl mu/m mixed-signal and 1.8V 0.18 /spl mu/m digital CMOS provides OQPSK demodulation with carrier recovery, memory and control, voice-companding codecs, and SLIC interfaces (SIs) for a CATV telephony distribution system. The die area of the mixed-signal IC is 84.9mm/sup 2/ and 15.2mm/sup 2/ for the digital IC. The power dissipation is 660mW.
一个if基带多芯片模块,在3.3V 0.35/spl μ m混合信号和1.8V 0.18 / μ l μ m数字CMOS中制造,为有线电视电话分配系统提供OQPSK解调,具有载波恢复、存储和控制、语音压缩编解码器和SLIC接口(si)。混合信号IC的芯片面积为84.9mm/sup 2/,数字IC的芯片面积为15.2mm/sup 2/,功耗为660mW。
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引用次数: 0
Low-power sequential access memory design 低功耗顺序存取存储器设计
J. Moon, W. Athas, P. Beerel, J. Draper
This paper presents the design and evaluation of a sequential access memory (SAM) that provides low power and high performance by replacing address decoders with special locally-communicating sequencers. A test chip containing one 16/spl times/16-b SAM and one 64/spl times/16-b SAM (consisting of four 16/spl times/16-b banks) has been designed, fabricated, and evaluated using a 0.25-/spl mu/m CMOS process. With a clock frequency of 40 MHz at 1.2 V, the measured worst-case read power dissipations for the 16/spl times/16-b SAM and the 64/spl times/16-b SAM are 344 /spl mu/W and 358 /spl mu/W respectively, demonstrating power dissipation that is largely independent of SAM size.
本文介绍了一种顺序存取存储器(SAM)的设计和评价,该存储器通过用特殊的本地通信序列器代替地址解码器来提供低功耗和高性能。一个测试芯片包含一个16/spl倍/16-b SAM和一个64/spl倍/16-b SAM(由四个16/spl倍/16-b组组成)已经设计,制造,并使用0.25-/spl μ m CMOS工艺进行评估。时钟频率为40mhz, 1.2 V时,16/spl倍/16-b的SAM和64/spl倍/16-b的SAM的最坏情况读取功耗分别为344 /spl mu/W和358 /spl mu/W,表明功耗在很大程度上与SAM大小无关。
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引用次数: 10
A 500-dpi cellular-logic processing array for fingerprint-image enhancement and verification 一种用于指纹图像增强和验证的500 dpi蜂窝逻辑处理阵列
K. Fujii, M. Nakanishi, S. Shigematsu, H. Morimura, T. Hatano, N. Ikeda, T. Shimamura, Y. Okazaki, H. Kyuragi
A 500-dpi cellular-logic processing array performs all fingerprint identification steps on one chip, from image acquisition, enhancement, to verification. Morphological functions for executing these steps are implemented in a 30/spl times/50-/spl mu/m/sup 2/ processing unit. A single-cycle datapath and a shared logic structure enable compact implementation of the processing unit. A fabricated 224/spl times/256-pixel fingerprint identification LSI demonstrates fully-functional image processing and practical accuracy of identification.
500 dpi蜂窝逻辑处理阵列在一个芯片上执行所有指纹识别步骤,从图像采集,增强到验证。用于执行这些步骤的形态学函数在30/spl times/50-/spl mu/m/sup 2/处理单元中实现。单周期数据路径和共享逻辑结构使处理单元的实现更加紧凑。制作的224/spl次/256像素指纹识别LSI具有全功能的图像处理和实用的识别精度。
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引用次数: 13
A 6 MHz-130 MHz DLL with a fixed latency of one clock cycle delay 一个6 MHz-130 MHz的DLL,具有一个时钟周期延迟的固定延迟
Hsiang-Hui Chang, Jyh-Woei Lin, Shen-Iuan Liu
In this paper, a wide range delay-locked loop (DLL) with a fixed latency of one clock cycle is proposed. Using the phase selection circuit and the start-controlled circuit enlarges the operating frequency range of this DLL and eliminates the harmonic locking problems. The operating frequency range of the DLL can be from 1/T/sub Dmin/ to 1/(N/spl times/T/sub Dmax/), where T/sub Dmin/ and T/sub Dmax/ are the minimum and maximum delay of a delay cell, respectively, and N is the number of delay cells used in the delay line theoretically. Fabricated in a 0.35 /spl mu/m 1P3M standard CMOS process, the DLL occupies an active area of 880 /spl mu/m/spl times/515 /spl mu/m and consumes a maximum power of 132 mW at 130 MHz. The measurement results show that the operating frequency range is from 6 MHz to 130 MHz and the latency is just one clock cycle. From the entire operating frequency range, the maximum r.m.s. jitter would not exceed 25 ps.
本文提出了一种固定时延为一个时钟周期的宽范围延迟锁定环(DLL)。采用选相电路和启动控制电路,扩大了动态链接器的工作频率范围,消除了谐波锁紧问题。DLL的工作频率范围可以从1/T/sub Dmin/到1/(N/spl倍/T/sub Dmax/),其中T/sub Dmin/和T/sub Dmax/分别是一个延迟单元的最小和最大延迟,N是理论上用于延迟线的延迟单元的个数。该DLL采用0.35 /spl mu/m 1P3M标准CMOS工艺制造,占用880 /spl mu/m/spl倍/515 /spl mu/m的有效面积,在130 MHz时消耗的最大功率为132 mW。测量结果表明,工作频率范围为6mhz ~ 130mhz,时延仅为一个时钟周期。在整个工作频率范围内,最大均方根抖动不会超过25ps。
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引用次数: 1
Integrated circuits for 3GPP mobile wireless systems 3GPP移动无线系统集成电路
C. Nicol, M. Cooke
This paper describes the architecture of integrated circuits for base-band processing in 3rd Generation (3G) mobile wireless systems. Wideband CDMA receiver functions including the RAKE, rate de/matching, channel de/interleaving, channel de/coding and multi-user detection are described. Silicon implementations of a 3GPP channel decoder and also a multi-user base-band signal processor are presented. The high speed downlink packet access (HSDPA) system providing downlink data rates in excess of 10 Mbps and the 20 Mbps multiple input/multiple output (MIMO) extensions are also described. The architecture of a 21.6 Mbps MIMO HSDPA receiver for mobile terminals with 2 or 4 antennas is shown that uses the V-BLAST MIMO detection algorithm.
本文介绍了第三代移动无线系统中用于基带处理的集成电路体系结构。描述了宽带CDMA接收机的RAKE、速率解/匹配、信道解/交织、信道解/编码和多用户检测等功能。给出了一个3GPP信道解码器和一个多用户基带信号处理器的硅实现。高速下行分组接入(HSDPA)系统提供下行数据速率超过10 Mbps和20 Mbps多输入/多输出(MIMO)扩展。给出了采用V-BLAST MIMO检测算法的移动终端21.6 Mbps MIMO HSDPA接收机的结构。
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引用次数: 5
A 1.8 V fully embedded 10 b 160 MS/s two-step ADC in 0.18 /spl mu/m CMOS 一个1.8 V全嵌入式10 b 160 MS/s两步ADC在0.18 /spl μ m CMOS
M. Clara, A. Wiesbauer, F. Kuttner
A two-step ADC with interleaved fine conversion achieves 9.1 effective bits with a sampling frequency of 160 MHz. The effective resolution exceeds 8.5 bits for signal frequencies up to 66 MHz. The 10 bit converter with on-chip driver and reference measures only 1 mm/sup 2/ in a standard 0.18 /spl mu/m CMOS process and consumes 190 mW from a single 1.8 V supply. The fully embedded design is targeted at SoC-integration.
采用交错精细转换的两步ADC,采样频率为160 MHz,有效位为9.1位。有效分辨率超过8.5位,信号频率高达66mhz。带有片上驱动器和参考的10位转换器在标准的0.18 /spl mu/m CMOS工艺中仅测量1 mm/sup 2/,单个1.8 V电源消耗190 mW。全嵌入式设计以soc集成为目标。
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引用次数: 14
A 2 MHz GFSK IQ receiver for Bluetooth with DC-tolerant bit slicer 一个2兆赫GFSK IQ蓝牙接收机与直流容错位切片器
B. Song, T. Cho, D. Kang, S. Dow
An IQ processor in 0.18 /spl mu/m CMOS implements Bluetooth low-IF functions at 2 MHz with 7/sup th/-order complex Bessel bandpass IF filter, limiter, quadricorrelator baseband FM demodulator, and differential slope sensing bit slicer. The sensitivity is -46 dBm at 0.1% BER. The chip consumes 50 mW at 1.8 V and occupies 2 mm/spl times/2.8 mm.
一个0.18 /spl mu/m CMOS的IQ处理器在2 MHz下实现蓝牙低中频功能,带有7/sup /阶复贝塞尔带通中频滤波器、限幅器、四相关基带调频解调器和差分斜率传感位切分器。在0.1% BER下灵敏度为-46 dBm。该芯片在1.8 V时功耗为50mw,占用2mm /spl倍/2.8 mm。
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引用次数: 15
The effect of supply and substrate noise on jitter in ring oscillators 电源和衬底噪声对环形振荡器抖动的影响
N. Barton, D. Ozis, T. Fiez, K. Mayaram
Measurements, simulations and equations show that differential and single-ended ring oscillators have comparable performance when subjected to the same deterministic noise sources. Both topologies are shown to have a much greater sensitivity to supply noise than substrate noise. It is also shown that symmetrical/asymmetrical noise injection must be considered. The measured results are compared to predictive jitter equations and Spectre/spl reg/ time domain simulations. It is shown that the measurements are in agreement with the simulations and equations.
测量、模拟和方程表明,当受到相同的确定性噪声源时,差分和单端环形振荡器具有相当的性能。这两种拓扑结构都显示出对电源噪声比衬底噪声更敏感。还表明必须考虑对称/不对称噪声注入。测量结果与预测抖动方程和Spectre/spl reg/ time域模拟进行了比较。结果表明,测量结果与模拟结果和方程吻合较好。
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引用次数: 24
期刊
Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)
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