Pub Date : 2019-04-01DOI: 10.23919/ICEP.2019.8733546
Kanade Hokari, Shinichiro Suzuki, N. Okamoto, Takeyasu Saito, Isamu Ide, M. Nishikawa, Yoshikazu Onishi
Electric double layer capacitor (EDLC) is one of the promising energy storage devices with high capacity, high durability and rapid charge-discharge capability. However, the improvement of energy density is a big challenge to work on. In this study, we prepared activated carbon by KOH activation for 0 to 0.5 h at 700 to 800°C in N2 flow with carburized furfural resin particles (1 or 10 μm in diameter), then carried out N2 adsorption to evaluate pore structure as well as surface chemical structures. Activated carbon (1 μm in diameter) treated by 750°C-0 h or 800°C-0 h had ca. 2.5 times larger mesopore volume and 1.9 times larger mesopore ratio than the one by 700°C-0.5 h. The relationship between the surface functional group and the pore size distribution, and the EDLC capacity was investigated while the specific surface area was nearly equal value as 1200±100 m2/g. Activated carbon treated by 750°C-0 h (227 F/g) and 800°C-0 h (225 F/g) were higher than 700°C-0.5 h (198 F/g), which shows mesopore ratio plays a crucial role in 6 M KOH electrolyte.
双电层电容器(EDLC)具有高容量、高耐久性和快速充放电能力，是一种很有发展前途的储能器件。然而，能量密度的提高是一个巨大的挑战。在本研究中，我们使用直径为1 μm或10 μm的渗碳糠醛树脂颗粒，在700 ~ 800℃的N2流中，以KOH活化0 ~ 0.5 h制备活性炭，然后进行N2吸附，以评价孔隙结构和表面化学结构。750°C-0 h和800°C-0 h处理的直径为1 μm的活性炭比700°C-0.5 h处理的活性炭的介孔体积大2.5倍，介孔比大1.9倍。在比表面积接近1200±100 m2/g的情况下，研究了表面官能团与孔径分布和EDLC容量的关系。750°C-0 h (227 F/g)和800°C-0 h (225 F/g)处理的活性炭均高于700°C-0.5 h (198 F/g)处理的活性炭，表明中孔比在6 M KOH电解液中起着至关重要的作用。
{"title":"Structural Analysis and Electric Double Layer Capacitor of Furfural Resin -Based Active Carbon with Different Particle Size","authors":"Kanade Hokari, Shinichiro Suzuki, N. Okamoto, Takeyasu Saito, Isamu Ide, M. Nishikawa, Yoshikazu Onishi","doi":"10.23919/ICEP.2019.8733546","DOIUrl":"https://doi.org/10.23919/ICEP.2019.8733546","url":null,"abstract":"Electric double layer capacitor (EDLC) is one of the promising energy storage devices with high capacity, high durability and rapid charge-discharge capability. However, the improvement of energy density is a big challenge to work on. In this study, we prepared activated carbon by KOH activation for 0 to 0.5 h at 700 to 800°C in N2 flow with carburized furfural resin particles (1 or 10 μm in diameter), then carried out N2 adsorption to evaluate pore structure as well as surface chemical structures. Activated carbon (1 μm in diameter) treated by 750°C-0 h or 800°C-0 h had ca. 2.5 times larger mesopore volume and 1.9 times larger mesopore ratio than the one by 700°C-0.5 h. The relationship between the surface functional group and the pore size distribution, and the EDLC capacity was investigated while the specific surface area was nearly equal value as 1200±100 m2/g. Activated carbon treated by 750°C-0 h (227 F/g) and 800°C-0 h (225 F/g) were higher than 700°C-0.5 h (198 F/g), which shows mesopore ratio plays a crucial role in 6 M KOH electrolyte.","PeriodicalId":213025,"journal":{"name":"2019 International Conference on Electronics Packaging (ICEP)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130625009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-04-01DOI: 10.23919/ICEP.2019.8733520
P. Czubarow, Yoshitaka Kamata, Toshiyuki Sato, H. Katz
The electronics industry is always looking for new ways of protecting devices from over-voltage, or over-current scenarios. In the present work we will introduce novel low-voltage epoxy-carbon nanotube composites with high non-linearity values in resistive devices. Some of the non-linearities achieved had alpha values greater than 10. Devices of different dimensions were made on single polyimide film substrates by photolithographic patterning of interdigitated electrode pairs. These devices were tested at different speeds over different voltage ranges, and I-V relationships are compared. Currently we are looking for direct applications of this technology in microelectronics applications.
{"title":"Over-Voltage Protection Epoxy-CNT Composites","authors":"P. Czubarow, Yoshitaka Kamata, Toshiyuki Sato, H. Katz","doi":"10.23919/ICEP.2019.8733520","DOIUrl":"https://doi.org/10.23919/ICEP.2019.8733520","url":null,"abstract":"The electronics industry is always looking for new ways of protecting devices from over-voltage, or over-current scenarios. In the present work we will introduce novel low-voltage epoxy-carbon nanotube composites with high non-linearity values in resistive devices. Some of the non-linearities achieved had alpha values greater than 10. Devices of different dimensions were made on single polyimide film substrates by photolithographic patterning of interdigitated electrode pairs. These devices were tested at different speeds over different voltage ranges, and I-V relationships are compared. Currently we are looking for direct applications of this technology in microelectronics applications.","PeriodicalId":213025,"journal":{"name":"2019 International Conference on Electronics Packaging (ICEP)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123900460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-04-01DOI: 10.23919/ICEP.2019.8733483
H. Kuwae, Kosuke Yamada, Wataru Momose, S. Shoji, J. Mizuno
A low temperature Cu-Cu bonding technique using an atomically thin-Pt intermediate layer deposited by atomic layer deposition (ALD) was recently reported. In this study, we investigated the characteristic of the Cu-Cu quasi-direct bonding using different metal intermediate layers. A thin-Pt or Au intermediate layer were deposited on the Cu surface by ALD in angstrom level. Both the thin-Pt and the Au intermediate layer successfully improved the Cu-Cu bonding strength compared with that without thin-metal intermediate layer. Although Au is widely used as a thick-intermediate layer in conventional Cu-Cu bonding methods, the Cu-Cu quasi-direct bonding with thin-Pt layer obtained three times lager bonding strength (9.52 MPa) than that with thin-Au layer (3.20 MPa). These results are essential for developing low temperature Cu-Cu bonding for highly integrated 3D IC chips.
{"title":"Cu-Cu Quasi-Direct Bonding with Atomically Thin-Au and Pt Intermediate Layer Using Atomic Layer Deposition","authors":"H. Kuwae, Kosuke Yamada, Wataru Momose, S. Shoji, J. Mizuno","doi":"10.23919/ICEP.2019.8733483","DOIUrl":"https://doi.org/10.23919/ICEP.2019.8733483","url":null,"abstract":"A low temperature Cu-Cu bonding technique using an atomically thin-Pt intermediate layer deposited by atomic layer deposition (ALD) was recently reported. In this study, we investigated the characteristic of the Cu-Cu quasi-direct bonding using different metal intermediate layers. A thin-Pt or Au intermediate layer were deposited on the Cu surface by ALD in angstrom level. Both the thin-Pt and the Au intermediate layer successfully improved the Cu-Cu bonding strength compared with that without thin-metal intermediate layer. Although Au is widely used as a thick-intermediate layer in conventional Cu-Cu bonding methods, the Cu-Cu quasi-direct bonding with thin-Pt layer obtained three times lager bonding strength (9.52 MPa) than that with thin-Au layer (3.20 MPa). These results are essential for developing low temperature Cu-Cu bonding for highly integrated 3D IC chips.","PeriodicalId":213025,"journal":{"name":"2019 International Conference on Electronics Packaging (ICEP)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129246679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-04-01DOI: 10.23919/ICEP.2019.8733565
Chih-han Yang, Shiqi Zhou, S. Lin, H. Nishikawa
With the miniaturization and high density of electronic devices, the development of electronic packaging technologies has grown significantly in recent years. In order to eliminate thermal damages of the CTE (Coefficient of thermal expansion) mismatches of materials in packaging modules, low-temperature lead (Pb)-free solders with low cost and high reliability are in demand in the electronic industry. Eutectic Sn-58Bi with high tensile strength and low melting temperature at 139 °C has caught great concerns in the industry. However, the brittle nature of the Bi-rich phase is a significant issue in employing the Sn-58Bi solder. Therefore, the goal is to design proper alloying elements for improving the elongation of the Sn-58Bi solder, while keeping their low melting temperatures. In the literature, it has been found that minor indium (In)-doping can substantially improve the elongation of Sn-58Bi solder; however, the excess amount of In-doping would lead to the formation of brittle BiIn intermetallic compound (IMC). In addition, according to our previous study, minor gallium (Ga) doping into the Sn-Bi solder can effectively suppress the interfacial IMC growth1. In this study, CALPHAD-type thermodynamic calculations using the PANDAT software and corresponding key experiments were performed to design the Sn-Bi-In-Ga (SBIG) quaternary low-temperature solders. Calculated solidification paths based on the lever rule and the Scheil model were employed to design the desired compositional range of the Sn-Bi-In ternary constituents, without the formation of brittle IMC during reflow and solidification processes. The designed Sn-Bi-In-Ga (SBIG) quaternary low-temperature solder is composed of the primary (Sn) phase, the (Sn)+(Bi) eutectic structure and little amount of unreacted excess Ga and the steps of solidification were furtherly verified in the step quenching experiment. Moreover, the different cooling rate made a great influence on the IMC appearing. Because the primary (Sn) phase was solidified more completely with the lower cooling rate such as furnace cooling, BiIn-rich liquid was formed, and the BiIn IMC was easily observed. As for the mechanical properties of the SBIG solder after air cooling, high yield strength, high ultimate tensile strength, and a much better elongation than the conventional Sn-58Bi solder were obtained. Dimple-like morphology was observed in the fracture surface, indicating a ductile fracture. A new low-temperature Pb-free Sn-Bi-In-Ga quaternary solder with good mechanical properties is proposed based on computational thermodynamics and validated in experiments.
随着电子器件的小型化和高密度化，近年来电子封装技术得到了长足的发展。为了消除封装模块中材料CTE(热膨胀系数)失配造成的热损伤，电子行业需要低成本、高可靠性的低温无铅焊料。共晶Sn-58Bi具有较高的抗拉强度和较低的熔点(139℃)，引起了业界的广泛关注。然而，富bi相的脆性是采用Sn-58Bi焊料的一个重要问题。因此，目标是设计合适的合金元素，以提高Sn-58Bi焊料的延伸率，同时保持较低的熔化温度。在文献中发现，少量的铟(In)掺杂可以显著提高Sn-58Bi焊料的延伸率;但是过量的in掺杂会形成脆性的BiIn金属间化合物(IMC)。此外，根据我们之前的研究，少量镓(Ga)掺杂到Sn-Bi焊料中可以有效抑制界面IMC生长1。本研究利用PANDAT软件进行calphad型热力学计算，并进行相应的关键实验，设计Sn-Bi-In-Ga (SBIG)四元低温钎料。基于杠杆规则和Scheil模型计算的凝固路径设计了Sn-Bi-In三元组分的理想组成范围，在回流和凝固过程中不形成脆性IMC。设计的Sn-Bi- in -Ga (SBIG)四元低温焊料由初生(Sn)相、(Sn)+(Bi)共晶组织和少量未反应的过量Ga组成，并在阶梯淬火实验中进一步验证了凝固的步骤。此外，不同冷却速率对内压温度的出现也有很大的影响。由于初生(Sn)相在较低的冷却速率(如炉内冷却)下凝固更彻底，形成了富BiIn液体，容易观察到BiIn IMC。空冷后SBIG焊料的力学性能与传统Sn-58Bi焊料相比，具有较高的屈服强度、抗拉极限强度和伸长率。断口表面呈韧窝状，为韧性断裂。基于计算热力学，提出了一种具有良好力学性能的低温无铅Sn-Bi-In-Ga四元钎料，并进行了实验验证。
{"title":"Development of Sn-Bi-In-Ga quaternary low-temperature solders","authors":"Chih-han Yang, Shiqi Zhou, S. Lin, H. Nishikawa","doi":"10.23919/ICEP.2019.8733565","DOIUrl":"https://doi.org/10.23919/ICEP.2019.8733565","url":null,"abstract":"With the miniaturization and high density of electronic devices, the development of electronic packaging technologies has grown significantly in recent years. In order to eliminate thermal damages of the CTE (Coefficient of thermal expansion) mismatches of materials in packaging modules, low-temperature lead (Pb)-free solders with low cost and high reliability are in demand in the electronic industry. Eutectic Sn-58Bi with high tensile strength and low melting temperature at 139 °C has caught great concerns in the industry. However, the brittle nature of the Bi-rich phase is a significant issue in employing the Sn-58Bi solder. Therefore, the goal is to design proper alloying elements for improving the elongation of the Sn-58Bi solder, while keeping their low melting temperatures. In the literature, it has been found that minor indium (In)-doping can substantially improve the elongation of Sn-58Bi solder; however, the excess amount of In-doping would lead to the formation of brittle BiIn intermetallic compound (IMC). In addition, according to our previous study, minor gallium (Ga) doping into the Sn-Bi solder can effectively suppress the interfacial IMC growth1. In this study, CALPHAD-type thermodynamic calculations using the PANDAT software and corresponding key experiments were performed to design the Sn-Bi-In-Ga (SBIG) quaternary low-temperature solders. Calculated solidification paths based on the lever rule and the Scheil model were employed to design the desired compositional range of the Sn-Bi-In ternary constituents, without the formation of brittle IMC during reflow and solidification processes. The designed Sn-Bi-In-Ga (SBIG) quaternary low-temperature solder is composed of the primary (Sn) phase, the (Sn)+(Bi) eutectic structure and little amount of unreacted excess Ga and the steps of solidification were furtherly verified in the step quenching experiment. Moreover, the different cooling rate made a great influence on the IMC appearing. Because the primary (Sn) phase was solidified more completely with the lower cooling rate such as furnace cooling, BiIn-rich liquid was formed, and the BiIn IMC was easily observed. As for the mechanical properties of the SBIG solder after air cooling, high yield strength, high ultimate tensile strength, and a much better elongation than the conventional Sn-58Bi solder were obtained. Dimple-like morphology was observed in the fracture surface, indicating a ductile fracture. A new low-temperature Pb-free Sn-Bi-In-Ga quaternary solder with good mechanical properties is proposed based on computational thermodynamics and validated in experiments.","PeriodicalId":213025,"journal":{"name":"2019 International Conference on Electronics Packaging (ICEP)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123480819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-04-01DOI: 10.23919/ICEP.2019.8733548
M. Ankenbrand, Y. Eiche, J. Franke
Additive manufacturing technologies open up new paths in the production of Mechatronic Integrated Devices (MID) and enable rapid and cost-efficient fabrication of demonstrators and customer-specific applications with lot size one. The MID technology is used in many applications in the automotive, medical and telecommunication industry and allows a high amount of functional integration. In this work, a 5-axis all in one machine is used to combine Fused Filament Fabrication (FFF) for the additive manufacturing of substrates, a Piezojet print head for generating circuit tracks as well as a vacuum pipette for placing surface mounted devices (SMDs). Conductive paths can be printed with Piezojet on arbitrary freeform surfaces because of the high possible working distance. After the printing process of the part is completed, the utilized conductive silver paste is cured in a convection oven. The SMDs are placed directly into the liquid paste, which also contains adhesives. The 5-axis motion system enables the mounting of components at any position of a hemisphere. On the software side, a CAD/CAM system is extended by a slicer, printed electronics functionality and Pick and Place operations in order to allow the generation of one single machine program for the automatic manufacturing of mechatronic products. A machine simulation is programmed to validate generated programs before executing them on the real system. All tools are mounted in the system simultaneously and are activated by tool change commands in the NC program.
{"title":"Programming and Evaluation of a Multi-Axis/Multi-Process Manufacturing System for Mechatronic Integrated Devices","authors":"M. Ankenbrand, Y. Eiche, J. Franke","doi":"10.23919/ICEP.2019.8733548","DOIUrl":"https://doi.org/10.23919/ICEP.2019.8733548","url":null,"abstract":"Additive manufacturing technologies open up new paths in the production of Mechatronic Integrated Devices (MID) and enable rapid and cost-efficient fabrication of demonstrators and customer-specific applications with lot size one. The MID technology is used in many applications in the automotive, medical and telecommunication industry and allows a high amount of functional integration. In this work, a 5-axis all in one machine is used to combine Fused Filament Fabrication (FFF) for the additive manufacturing of substrates, a Piezojet print head for generating circuit tracks as well as a vacuum pipette for placing surface mounted devices (SMDs). Conductive paths can be printed with Piezojet on arbitrary freeform surfaces because of the high possible working distance. After the printing process of the part is completed, the utilized conductive silver paste is cured in a convection oven. The SMDs are placed directly into the liquid paste, which also contains adhesives. The 5-axis motion system enables the mounting of components at any position of a hemisphere. On the software side, a CAD/CAM system is extended by a slicer, printed electronics functionality and Pick and Place operations in order to allow the generation of one single machine program for the automatic manufacturing of mechatronic products. A machine simulation is programmed to validate generated programs before executing them on the real system. All tools are mounted in the system simultaneously and are activated by tool change commands in the NC program.","PeriodicalId":213025,"journal":{"name":"2019 International Conference on Electronics Packaging (ICEP)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115830605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-04-01DOI: 10.23919/ICEP.2019.8733529
Tsuyoshi Abe, Y. Nishigaki, M. Kozako, M. Hikita
Recently, as power module tends to have higher output density, large-capacity and downsizing of the module are demanded. It also tends to operate at higher temperatures. From the above circumstances, evaluation of high temperature electrical properties of ceramic insulating substrates for application of next generation power module becomes important. However, there are very few reports on the high temperature insulation property of the ceramic insulating substrate. This paper presents dielectric properties (relative permittivity εr´, relative dielectric loss factor εr″ and AC conductivity σac) of ceramic insulating substrate consisting of Silicon Nitride (Si3N4) used for next generation power module up to high temperature of 350 °C. Besides, DC conductivity σdc are evaluated as a function of the temperature of the substrate, from which the activation energy Ea was calculated. Thus obtained results are discussed with the temperature dependence of the permittivity and ac conductivity considered. An attempt is also made to evaluate specific properties of the Si3N4 substrate by comparing with the dielectric properties of Aluminum Nitride (A1N) substrate.
{"title":"High temperature dielectric property of silicon nitride insulating substrate for next generation power module up to 350 degrees Celsius.","authors":"Tsuyoshi Abe, Y. Nishigaki, M. Kozako, M. Hikita","doi":"10.23919/ICEP.2019.8733529","DOIUrl":"https://doi.org/10.23919/ICEP.2019.8733529","url":null,"abstract":"Recently, as power module tends to have higher output density, large-capacity and downsizing of the module are demanded. It also tends to operate at higher temperatures. From the above circumstances, evaluation of high temperature electrical properties of ceramic insulating substrates for application of next generation power module becomes important. However, there are very few reports on the high temperature insulation property of the ceramic insulating substrate. This paper presents dielectric properties (relative permittivity εr´, relative dielectric loss factor εr″ and AC conductivity σac) of ceramic insulating substrate consisting of Silicon Nitride (Si3N4) used for next generation power module up to high temperature of 350 °C. Besides, DC conductivity σdc are evaluated as a function of the temperature of the substrate, from which the activation energy Ea was calculated. Thus obtained results are discussed with the temperature dependence of the permittivity and ac conductivity considered. An attempt is also made to evaluate specific properties of the Si3N4 substrate by comparing with the dielectric properties of Aluminum Nitride (A1N) substrate.","PeriodicalId":213025,"journal":{"name":"2019 International Conference on Electronics Packaging (ICEP)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124779323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-04-01DOI: 10.23919/ICEP.2019.8733600
Masayoshi Otomo, Irma Yolanda Kapoglis, N. Sakai
This paper describes the development of a conductive adhesive which can be cured at low temperature and has a low modulus as a component mounting application on a flexible substrate. With the expanding wearable market, the demand for flexible hybrid electronics (FHE) applications has been growing steadily. FHE applications have several issues with existing materials. It is that a flexible bonding material is required to mount rigid components on a flexible substrate, and that most substrates used for flexible applications, such as thermoplastic polyurethane (TPU), cannot endure high temperatures. In order to solve these issues, conductive adhesives which have flexible / stretchable properties and low temperature curability are being developed. The developed conductive adhesive can perform low temperature curing at 80 degrees Celsius and has low Modulus of 850 MPa, so it can follow the movement of the flexible substrate. In a packaging test imitating actual applications, even when the base material was stretched by 20%, the sample mounted with our developed stretchable conductive adhesive showed integrity of the component up to 20% elongation and still showed good conductivity.
{"title":"Development of Stretchable Conductive Adhesive for Flexible Hybrid Electronics (FHE)","authors":"Masayoshi Otomo, Irma Yolanda Kapoglis, N. Sakai","doi":"10.23919/ICEP.2019.8733600","DOIUrl":"https://doi.org/10.23919/ICEP.2019.8733600","url":null,"abstract":"This paper describes the development of a conductive adhesive which can be cured at low temperature and has a low modulus as a component mounting application on a flexible substrate. With the expanding wearable market, the demand for flexible hybrid electronics (FHE) applications has been growing steadily. FHE applications have several issues with existing materials. It is that a flexible bonding material is required to mount rigid components on a flexible substrate, and that most substrates used for flexible applications, such as thermoplastic polyurethane (TPU), cannot endure high temperatures. In order to solve these issues, conductive adhesives which have flexible / stretchable properties and low temperature curability are being developed. The developed conductive adhesive can perform low temperature curing at 80 degrees Celsius and has low Modulus of 850 MPa, so it can follow the movement of the flexible substrate. In a packaging test imitating actual applications, even when the base material was stretched by 20%, the sample mounted with our developed stretchable conductive adhesive showed integrity of the component up to 20% elongation and still showed good conductivity.","PeriodicalId":213025,"journal":{"name":"2019 International Conference on Electronics Packaging (ICEP)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127199696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-04-01DOI: 10.23919/ICEP.2019.8733415
Hiroaki Ikeda, S. Sekine, Ryuji Kimura, Koichi Shimokawa, K. Okada, H. Shindo, T. Ooi, Rei Tamaki
We have developed a heat resistant joint paste by Cu-Sn IMCC (Intermetallic Compound Composite) for thin joint thickness. The developed IMCC paste contains only IMCC fine particles as a metal composite. Re-melting point of the paste can be above the sintering temperature. For example, 320C remelting point was observed by 280C sintering. The paste is adoptable for heat resistant joint. The paste also indicated there is no whisker in joint area after TCT 1,000cycles (-55~+175C). When the joint thickness to be thin, voids in the joint region becomes conspicuous. There are two root causes to form voids. The first is non-uniform interaction between joint material and objects (joint targets). The second is gas void. For the paste, we chose a simple composition using only IMC source (fine particles which already contains IMC micro-colonies in them) as a metal component to provide moderate and uniform interaction with joint targets. To eliminate gas voids, two-stage sintering process was adopted. The first sintering (pre-sintering) is to evaporate all volatiles from the paste and to make appropriate interconnection with the substrate keeping the paste shape convex and providing enough joint strength for subsequent cleaning treatments. The second sintering (main-sintering) is for the device joint to the paste without voids. For making thin joint thickness around 30μm, weak pressure onto the device (~0.7MPa) is effective. Test sample with Si die (700μm thick, 6mm width) with Ni/Au finished backside metal was mounted on to Cu substrate. The joint region is almost filled by grown IMC layers. The thickness of the joint region is 30μm for entire joint region without voids.
{"title":"Heat Resistant Cu-Sn based Joint Paste for less than 30μm joint thickness","authors":"Hiroaki Ikeda, S. Sekine, Ryuji Kimura, Koichi Shimokawa, K. Okada, H. Shindo, T. Ooi, Rei Tamaki","doi":"10.23919/ICEP.2019.8733415","DOIUrl":"https://doi.org/10.23919/ICEP.2019.8733415","url":null,"abstract":"We have developed a heat resistant joint paste by Cu-Sn IMCC (Intermetallic Compound Composite) for thin joint thickness. The developed IMCC paste contains only IMCC fine particles as a metal composite. Re-melting point of the paste can be above the sintering temperature. For example, 320C remelting point was observed by 280C sintering. The paste is adoptable for heat resistant joint. The paste also indicated there is no whisker in joint area after TCT 1,000cycles (-55~+175C). When the joint thickness to be thin, voids in the joint region becomes conspicuous. There are two root causes to form voids. The first is non-uniform interaction between joint material and objects (joint targets). The second is gas void. For the paste, we chose a simple composition using only IMC source (fine particles which already contains IMC micro-colonies in them) as a metal component to provide moderate and uniform interaction with joint targets. To eliminate gas voids, two-stage sintering process was adopted. The first sintering (pre-sintering) is to evaporate all volatiles from the paste and to make appropriate interconnection with the substrate keeping the paste shape convex and providing enough joint strength for subsequent cleaning treatments. The second sintering (main-sintering) is for the device joint to the paste without voids. For making thin joint thickness around 30μm, weak pressure onto the device (~0.7MPa) is effective. Test sample with Si die (700μm thick, 6mm width) with Ni/Au finished backside metal was mounted on to Cu substrate. The joint region is almost filled by grown IMC layers. The thickness of the joint region is 30μm for entire joint region without voids.","PeriodicalId":213025,"journal":{"name":"2019 International Conference on Electronics Packaging (ICEP)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129703729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-04-01DOI: 10.23919/ICEP.2019.8733588
T. H. Yang, C. Y. Yang, A. Shigetou, C. Kao
Joining of dissimilar materials is extremely important for flexible electronic packaging, that is generally achieved by assembly of pre-patterned electronic components with organic destination substrates in multi-layered architectures via transfer-printing technique. To avoid thermo-mechanical damages during bonding, organic- and inorganic-organic solid-state direct bonding must be achieved. Here we report a novel bonding process enabling both organic- and inorganic-organic material hybridization. Vacuum-induced reorganization of ethanol was used to achieve multiple effects of surface modification in this method, which has been named ethanol-assisted vacuum ultraviolet irradiation (E-VUV) process. In this study, investigation of X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) was conducted to thoroughly understand adhesion mechanism. The analytical results proved that the E-VUV process was applicable to PEEK-and tin-polyimide bonding, and the bonded interfaces are expected to be robust enough for flexible MEMS packaging.
{"title":"A Single Process for Homogeneous and Heterogeneous Bonding in Flexible Electronics : Ethanol-Assisted Vacuum Ultraviolet (E-VUV) Irradiation Process","authors":"T. H. Yang, C. Y. Yang, A. Shigetou, C. Kao","doi":"10.23919/ICEP.2019.8733588","DOIUrl":"https://doi.org/10.23919/ICEP.2019.8733588","url":null,"abstract":"Joining of dissimilar materials is extremely important for flexible electronic packaging, that is generally achieved by assembly of pre-patterned electronic components with organic destination substrates in multi-layered architectures via transfer-printing technique. To avoid thermo-mechanical damages during bonding, organic- and inorganic-organic solid-state direct bonding must be achieved. Here we report a novel bonding process enabling both organic- and inorganic-organic material hybridization. Vacuum-induced reorganization of ethanol was used to achieve multiple effects of surface modification in this method, which has been named ethanol-assisted vacuum ultraviolet irradiation (E-VUV) process. In this study, investigation of X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) was conducted to thoroughly understand adhesion mechanism. The analytical results proved that the E-VUV process was applicable to PEEK-and tin-polyimide bonding, and the bonded interfaces are expected to be robust enough for flexible MEMS packaging.","PeriodicalId":213025,"journal":{"name":"2019 International Conference on Electronics Packaging (ICEP)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132460655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-04-01DOI: 10.23919/icep.2019.8733411
{"title":"Welcome to ICEP 2019","authors":"","doi":"10.23919/icep.2019.8733411","DOIUrl":"https://doi.org/10.23919/icep.2019.8733411","url":null,"abstract":"","PeriodicalId":213025,"journal":{"name":"2019 International Conference on Electronics Packaging (ICEP)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134544575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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