Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003352
R. Szewczyk, P. Jablonski, Z. Kulesza, A. Napieralski, J. Cabestany, M. Moreno
In this paper an attempt to design decision part of the iris identification system, which will be able to identify persons just by a look at the camera, is discussed. Proposed system will be cheap in comparison with present ones. Modified Haralick's co-occurrence method with multilayer perceptron is used for extraction and classification of the irises. Some preliminary research results are also presented.
{"title":"Automatic people identification on the basis of iris pattern - extraction features and classification","authors":"R. Szewczyk, P. Jablonski, Z. Kulesza, A. Napieralski, J. Cabestany, M. Moreno","doi":"10.1109/MIEL.2002.1003352","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003352","url":null,"abstract":"In this paper an attempt to design decision part of the iris identification system, which will be able to identify persons just by a look at the camera, is discussed. Proposed system will be cheap in comparison with present ones. Modified Haralick's co-occurrence method with multilayer perceptron is used for extraction and classification of the irises. Some preliminary research results are also presented.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115084681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003338
S. Dordevic, P. Petkovi
This paper presents a new method for hierarchical analysis of large circuits that combine numeric and symbolic simulation. Symbolic analysis is applied only on subcircuits at the lowest hierarchical level. This approach proves beneficial for symbolic and numeric simulation. The time reduction is given on a benchmark example.
{"title":"Symbolic-numeric co-simulation of large analogue circuits","authors":"S. Dordevic, P. Petkovi","doi":"10.1109/MIEL.2002.1003338","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003338","url":null,"abstract":"This paper presents a new method for hierarchical analysis of large circuits that combine numeric and symbolic simulation. Symbolic analysis is applied only on subcircuits at the lowest hierarchical level. This approach proves beneficial for symbolic and numeric simulation. The time reduction is given on a benchmark example.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115294841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003150
G. Meijer, Li Xiujun
The paper reviews the architecture and design of low-cost high-performance sensor systems. These systems consist of a number of multiplexed sensor elements, sensor-specific front ends, modifiers and microcontroller or digital signal processors (DSPs). The object-oriented design approach is introduced as an approach to design low-cost high-performance systems. Constraints for the excitation signals of sensing elements are discussed and it is shown how a selective detection of the measurand can be obtained, with a high immunity for parasitic components, interfering signals and parameter drift. A set-up is presented in which the analog sensor signals are converted to analog signals in the time domain, using period-modulated oscillators. The A/D conversion of the time-domain signal can be implemented in the microcontroller or DSP. It is shown that, also in this case, the principles of the sigma-delta converters can be applied. Two case studies for systems designs are discussed: a universal sensor interface and a dynamic voltage processor.
{"title":"Smart sensor interface electronics","authors":"G. Meijer, Li Xiujun","doi":"10.1109/MIEL.2002.1003150","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003150","url":null,"abstract":"The paper reviews the architecture and design of low-cost high-performance sensor systems. These systems consist of a number of multiplexed sensor elements, sensor-specific front ends, modifiers and microcontroller or digital signal processors (DSPs). The object-oriented design approach is introduced as an approach to design low-cost high-performance systems. Constraints for the excitation signals of sensing elements are discussed and it is shown how a selective detection of the measurand can be obtained, with a high immunity for parasitic components, interfering signals and parameter drift. A set-up is presented in which the analog sensor signals are converted to analog signals in the time domain, using period-modulated oscillators. The A/D conversion of the time-domain signal can be implemented in the microcontroller or DSP. It is shown that, also in this case, the principles of the sigma-delta converters can be applied. Two case studies for systems designs are discussed: a universal sensor interface and a dynamic voltage processor.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124092823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003183
Aleksandar Vujani, Robert Pavelka, Nadja Adamovi, Christoph Kment, Sladjan Miti, Werner Brenner, Gordana Popovi
In this paper we described briefly the activities done in the frame of development of a system for contactless detection of the vibrations of the middle ear ossicle. The system has been constructed in the form of a fiber-optic vibrometer, which can be used as the microphone of a totally implantable hearing aid. The current state of the art is described and the initial measurements are presented and commented upon.
{"title":"Development of a totally implantable hearing aid","authors":"Aleksandar Vujani, Robert Pavelka, Nadja Adamovi, Christoph Kment, Sladjan Miti, Werner Brenner, Gordana Popovi","doi":"10.1109/MIEL.2002.1003183","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003183","url":null,"abstract":"In this paper we described briefly the activities done in the frame of development of a system for contactless detection of the vibrations of the middle ear ossicle. The system has been constructed in the form of a fiber-optic vibrometer, which can be used as the microphone of a totally implantable hearing aid. The current state of the art is described and the initial measurements are presented and commented upon.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128541032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003220
Vitezslav Benda, Zdenek Novak
This paper investigates the problem of evaluating the lifetime of a carrier measured by the OCVD (open circuit voltage decay) method on structures with a non-uniform carrier lifetime distribution. A simple model of two diodes connected in parallel (lumped charge approximation) has been used for evaluating the measured carrier lifetime. The theoretical analysis was experimentally verified.
{"title":"OCVD carrier lifetime measurements on an inhomogeneous diode structure","authors":"Vitezslav Benda, Zdenek Novak","doi":"10.1109/MIEL.2002.1003220","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003220","url":null,"abstract":"This paper investigates the problem of evaluating the lifetime of a carrier measured by the OCVD (open circuit voltage decay) method on structures with a non-uniform carrier lifetime distribution. A simple model of two diodes connected in parallel (lumped charge approximation) has been used for evaluating the measured carrier lifetime. The theoretical analysis was experimentally verified.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128558642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003187
G. Popovic, A. Almansa, E. Chatzitheodoridis, D. Petrović, O. Del Medico, W. Brenner, F. Sumecz, H. Detter
The efforts to bring micro system technology (MST) closer to industrial production have been supported by the European network "handling and assembly of functionally adapted microcomponents" (HAFAM) under the EC programme "training and mobility of researchers". This paper presents some of the final results of the HAFAM network. Topics addressed in the paper are: adaptation of high precision positioning stages to the needs of handling and assembly of microparts; development of tools for handling and assembly and methods for automation; combination of different technologies in one fabrication process for batch assembly purposes; joining techniques; methods and devices for quality control and characterization of various MST structures during and after the assembly process; and finally, norms and standardisation.
{"title":"Handling and assembly in MST - final results of a European network","authors":"G. Popovic, A. Almansa, E. Chatzitheodoridis, D. Petrović, O. Del Medico, W. Brenner, F. Sumecz, H. Detter","doi":"10.1109/MIEL.2002.1003187","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003187","url":null,"abstract":"The efforts to bring micro system technology (MST) closer to industrial production have been supported by the European network \"handling and assembly of functionally adapted microcomponents\" (HAFAM) under the EC programme \"training and mobility of researchers\". This paper presents some of the final results of the HAFAM network. Topics addressed in the paper are: adaptation of high precision positioning stages to the needs of handling and assembly of microparts; development of tools for handling and assembly and methods for automation; combination of different technologies in one fabrication process for batch assembly purposes; joining techniques; methods and devices for quality control and characterization of various MST structures during and after the assembly process; and finally, norms and standardisation.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128710776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003158
J. van der Spiegel, R. Etienne-Cummings, M. Nishimura
The paper starts with a brief discussion of the biological vision system that serves as a model for the three types of vision sensors described later on. A retina-like CCD sensor whose computational properties are embedded in its structure is described first, followed by a CMOS tracking sensor that consists of a fovea for smooth pursuit and a periphery for saccadic motion control. This sensor incorporates logarithmic compression, edge detection, direction-of-motion detection and centroid localization. Finally, a CMOS sensor for the detection of image features is discussed. The sensor extracts lower-level features, such as line orientation, line stops, and intersections, in a hierarchical fashion, similar to what the simple and complex cells do in the biological system.
{"title":"Biologically inspired vision sensors","authors":"J. van der Spiegel, R. Etienne-Cummings, M. Nishimura","doi":"10.1109/MIEL.2002.1003158","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003158","url":null,"abstract":"The paper starts with a brief discussion of the biological vision system that serves as a model for the three types of vision sensors described later on. A retina-like CCD sensor whose computational properties are embedded in its structure is described first, followed by a CMOS tracking sensor that consists of a fovea for smooth pursuit and a periphery for saccadic motion control. This sensor incorporates logarithmic compression, edge detection, direction-of-motion detection and centroid localization. Finally, a CMOS sensor for the detection of image features is discussed. The sensor extracts lower-level features, such as line orientation, line stops, and intersections, in a hierarchical fashion, similar to what the simple and complex cells do in the biological system.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129352910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003222
V. F. Mitin, V. V. Kholevchuk, R. Konakova, E. Venger, V. A. Odarich, O. Rudenko, M. Semen'ko, M. V. Khimenko
Structural, electrical and optical properties of Ge films on semi-insulating GaAs substrates have been investigated. Ge films were obtained using thermal evaporation in a vacuum onto semi-insulated GaAs(100) substrates. During the Ge deposition process the substrate temperature was varied from 120 to 450 /spl deg/C. The film thicknesses were varied from 0.8 up to 1.5 /spl mu/m. X-ray and electron diffraction, atomic force microscopy (AFM), multiangle ellipsometric and galvanomagnetic (Hall effect, resistance and magneto-resistance) measurements have been used for these investigations.
{"title":"Surface structure and electrical properties of Ge films on semi-insulating GaAs substrates","authors":"V. F. Mitin, V. V. Kholevchuk, R. Konakova, E. Venger, V. A. Odarich, O. Rudenko, M. Semen'ko, M. V. Khimenko","doi":"10.1109/MIEL.2002.1003222","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003222","url":null,"abstract":"Structural, electrical and optical properties of Ge films on semi-insulating GaAs substrates have been investigated. Ge films were obtained using thermal evaporation in a vacuum onto semi-insulated GaAs(100) substrates. During the Ge deposition process the substrate temperature was varied from 120 to 450 /spl deg/C. The film thicknesses were varied from 0.8 up to 1.5 /spl mu/m. X-ray and electron diffraction, atomic force microscopy (AFM), multiangle ellipsometric and galvanomagnetic (Hall effect, resistance and magneto-resistance) measurements have been used for these investigations.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128733461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003358
N. Stojadinovic, I. Manic, S. Djoric-Veljkovic, V. Davidovic, D. Danković, S. Golubovic, S. Dimitrijev
Spontaneous recovery of threshold voltage and channel carrier mobility in positive gate bias stressed power VDMOSFETs and the underlying changes in gate oxide-trapped charge and interface trap densities are presented and analysed. Electron tunneling from neutral oxide traps associated with trivalent silicon /spl equiv/Si/sub o//sup ./ defects into the oxide conduction band is proposed as the main mechanism responsible for stress-induced buildup of positive oxide-trapped charge. Subsequent hole tunneling from the charged oxide traps /spl equiv/Si/sub o//sup +/ to interface-trap precursors /spl equiv/Si/sub s/-H is proposed as the dominant mechanism responsible for the interface trap buildup. A chain of mechanisms related to a presence of hydrogen species is proposed in order to explain changes of oxide-trapped charge and interface trap densities during the spontaneous recovery. Interface trap /spl equiv/Si/sub s//sup ./ passivation due to their reaction with hydrogen atoms is proposed as a main mechanism responsible for a decrease of interface trap density. Hydrogen molecule cracking at charged oxide traps /spl equiv/Si/sub o//sup +/, which leads to their neutralization, is proposed as the dominant mechanism responsible for a decrease of oxide-trapped charge density.
{"title":"Spontaneous recovery of positive gate bias stressed power VDMOSFETs","authors":"N. Stojadinovic, I. Manic, S. Djoric-Veljkovic, V. Davidovic, D. Danković, S. Golubovic, S. Dimitrijev","doi":"10.1109/MIEL.2002.1003358","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003358","url":null,"abstract":"Spontaneous recovery of threshold voltage and channel carrier mobility in positive gate bias stressed power VDMOSFETs and the underlying changes in gate oxide-trapped charge and interface trap densities are presented and analysed. Electron tunneling from neutral oxide traps associated with trivalent silicon /spl equiv/Si/sub o//sup ./ defects into the oxide conduction band is proposed as the main mechanism responsible for stress-induced buildup of positive oxide-trapped charge. Subsequent hole tunneling from the charged oxide traps /spl equiv/Si/sub o//sup +/ to interface-trap precursors /spl equiv/Si/sub s/-H is proposed as the dominant mechanism responsible for the interface trap buildup. A chain of mechanisms related to a presence of hydrogen species is proposed in order to explain changes of oxide-trapped charge and interface trap densities during the spontaneous recovery. Interface trap /spl equiv/Si/sub s//sup ./ passivation due to their reaction with hydrogen atoms is proposed as a main mechanism responsible for a decrease of interface trap density. Hydrogen molecule cracking at charged oxide traps /spl equiv/Si/sub o//sup +/, which leads to their neutralization, is proposed as the dominant mechanism responsible for a decrease of oxide-trapped charge density.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":"51 17","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113934192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003153
D. Dubuc, K. Grenier, L. Rabbia, A. Tackac, M. Saadaoui, P. Pons, P. Caudrillier, O. Pascal, H. Aubert, H. Baudrand, J. Tao, P. Combes, J. Graffeuil, R. Plana
This paper presents a new family of components based on the MEMS and NEMS (nano-electromechanical system) concepts. They show very attractive properties for future wireless communications systems. The design of such components involves both electromagnetic simulations and mechanical and thermal modelling in order to get an accurate description of their electrical behavior.
{"title":"MEMS and NEMS technologies for wireless communications","authors":"D. Dubuc, K. Grenier, L. Rabbia, A. Tackac, M. Saadaoui, P. Pons, P. Caudrillier, O. Pascal, H. Aubert, H. Baudrand, J. Tao, P. Combes, J. Graffeuil, R. Plana","doi":"10.1109/MIEL.2002.1003153","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003153","url":null,"abstract":"This paper presents a new family of components based on the MEMS and NEMS (nano-electromechanical system) concepts. They show very attractive properties for future wireless communications systems. The design of such components involves both electromagnetic simulations and mechanical and thermal modelling in order to get an accurate description of their electrical behavior.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122890228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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