Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003197
J. Hadzi-Vukovic, M. Jevtic, D. Simic
In this paper, we present an analysis of phase noise distribution. Phase noise, of a designed and realized test oscillator, as a consequence of low frequency (LF) noise up-conversion was simulated. The analysis shows that low frequency noise sources, which are inside the oscillator transistor, give the pure Gaussian distribution of phase noise and LF noise sources located outwith the transistor change this distribution. This behavior could be explained by the influence of the transistor and the transistor's package impedance, which contribute to the signal delay. The microwave test oscillator is designed and realized with AlGaAs/InGaAs HEMTs.
{"title":"Phase noise amplitude distribution as indicator of origin of random phase perturbation in a test oscillator","authors":"J. Hadzi-Vukovic, M. Jevtic, D. Simic","doi":"10.1109/MIEL.2002.1003197","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003197","url":null,"abstract":"In this paper, we present an analysis of phase noise distribution. Phase noise, of a designed and realized test oscillator, as a consequence of low frequency (LF) noise up-conversion was simulated. The analysis shows that low frequency noise sources, which are inside the oscillator transistor, give the pure Gaussian distribution of phase noise and LF noise sources located outwith the transistor change this distribution. This behavior could be explained by the influence of the transistor and the transistor's package impedance, which contribute to the signal delay. The microwave test oscillator is designed and realized with AlGaAs/InGaAs HEMTs.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127628608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003201
V. Vanke
Russian experience in the field of non-traditional microwave electronics based on electron beam transverse waves use is discussed in this short review. Devices studied include the cyclotron wave protector and parametric amplifier, the cyclotron wave electrostatic amplifier, the circularly polarized TWT, and a cyclotron wave converter of microwaves in DC.
{"title":"Non-traditional microwave electronics based on electron beam transverse grouping","authors":"V. Vanke","doi":"10.1109/MIEL.2002.1003201","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003201","url":null,"abstract":"Russian experience in the field of non-traditional microwave electronics based on electron beam transverse waves use is discussed in this short review. Devices studied include the cyclotron wave protector and parametric amplifier, the cyclotron wave electrostatic amplifier, the circularly polarized TWT, and a cyclotron wave converter of microwaves in DC.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123820796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003148
Radivoje Popovic, P. Drljaca, Christian Schott
By integrating a magnetic flux concentrator (IMC) at the surface of a Hall magnetic sensor, we can dramatically improve its characteristics. Here we compare the performance of a new IMC Hall sensor ASIC with the performance of traditional magnetic field sensors, such as AMR, GMR, and conventional Hall sensor ASICs. We find that the detectivities of AMRs and GMRs for AC magnetic fields are much better than those of Hall ASICs; for low-frequency fields, the performance gap is smaller; but for DC fields, the resolution of the IMC Hall ASIC is much better than that of GMRs and approaches the resolution of a nonswitched AMR. Also according other parameters, the IMC Hall ASIC is positioned in the gap between AMRs, GMRs, and the conventional Hall ASIC magnetic field sensors.
{"title":"Bridging the gap between AMR, GMR, and Hall magnetic sensors","authors":"Radivoje Popovic, P. Drljaca, Christian Schott","doi":"10.1109/MIEL.2002.1003148","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003148","url":null,"abstract":"By integrating a magnetic flux concentrator (IMC) at the surface of a Hall magnetic sensor, we can dramatically improve its characteristics. Here we compare the performance of a new IMC Hall sensor ASIC with the performance of traditional magnetic field sensors, such as AMR, GMR, and conventional Hall sensor ASICs. We find that the detectivities of AMRs and GMRs for AC magnetic fields are much better than those of Hall ASICs; for low-frequency fields, the performance gap is smaller; but for DC fields, the resolution of the IMC Hall ASIC is much better than that of GMRs and approaches the resolution of a nonswitched AMR. Also according other parameters, the IMC Hall ASIC is positioned in the gap between AMRs, GMRs, and the conventional Hall ASIC magnetic field sensors.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123035254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003216
M. Scepanovi, I. Hinić, M. Jevtic
The results of photoluminescence (PL) measurements performed for Hg/sub 1-x/Cd/sub x/Te (x=0.165) samples are presented. The surfaces of these samples were modified using long exposure to the atmosphere (series A), etching by 0.5% Br-methanol during 1 minute (series B) and during 5 minutes (series C). For each series samples PL spectra were measured at different temperatures in the range from 16 to 300 K. PL bands at about 2.1 eV and 2.3 eV are recognized in PL spectra of each series samples. The analysis of PL and Raman spectra shows that the band at /spl sim/2.1 eV is caused by presence of the nonstoichiometric oxides. The band at 2.3 eV originates of organic compounds which are deposited at the surface during etching process. PL of the observed samples decreases after irradiation by intense nanosecond pulse of Nd:YAG laser.
{"title":"Photoluminescence caused by presence of defects and oxides at the surface of Hg/sub 1-x/Cd/sub x/Te","authors":"M. Scepanovi, I. Hinić, M. Jevtic","doi":"10.1109/MIEL.2002.1003216","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003216","url":null,"abstract":"The results of photoluminescence (PL) measurements performed for Hg/sub 1-x/Cd/sub x/Te (x=0.165) samples are presented. The surfaces of these samples were modified using long exposure to the atmosphere (series A), etching by 0.5% Br-methanol during 1 minute (series B) and during 5 minutes (series C). For each series samples PL spectra were measured at different temperatures in the range from 16 to 300 K. PL bands at about 2.1 eV and 2.3 eV are recognized in PL spectra of each series samples. The analysis of PL and Raman spectra shows that the band at /spl sim/2.1 eV is caused by presence of the nonstoichiometric oxides. The band at 2.3 eV originates of organic compounds which are deposited at the surface during etching process. PL of the observed samples decreases after irradiation by intense nanosecond pulse of Nd:YAG laser.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127793459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003352
R. Szewczyk, P. Jablonski, Z. Kulesza, A. Napieralski, J. Cabestany, M. Moreno
In this paper an attempt to design decision part of the iris identification system, which will be able to identify persons just by a look at the camera, is discussed. Proposed system will be cheap in comparison with present ones. Modified Haralick's co-occurrence method with multilayer perceptron is used for extraction and classification of the irises. Some preliminary research results are also presented.
{"title":"Automatic people identification on the basis of iris pattern - extraction features and classification","authors":"R. Szewczyk, P. Jablonski, Z. Kulesza, A. Napieralski, J. Cabestany, M. Moreno","doi":"10.1109/MIEL.2002.1003352","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003352","url":null,"abstract":"In this paper an attempt to design decision part of the iris identification system, which will be able to identify persons just by a look at the camera, is discussed. Proposed system will be cheap in comparison with present ones. Modified Haralick's co-occurrence method with multilayer perceptron is used for extraction and classification of the irises. Some preliminary research results are also presented.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115084681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003321
V. Liberali
This paper illustrates a simple model for calculation and experimental evaluation of epi layer resistance. The model can be used during early stages of mixed-signal integrated circuit design, to estimate the effects of switching noise injection from digital cells to analog circuitry. Moreover, the proposed model leads to a simplified equivalent circuit that can be used for fast SPICE-level simulations of crosstalk effects.
{"title":"Evaluation of epi layer resistivity effects in mixed-signal submicron CMOS integrated circuits","authors":"V. Liberali","doi":"10.1109/MIEL.2002.1003321","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003321","url":null,"abstract":"This paper illustrates a simple model for calculation and experimental evaluation of epi layer resistance. The model can be used during early stages of mixed-signal integrated circuit design, to estimate the effects of switching noise injection from digital cells to analog circuitry. Moreover, the proposed model leads to a simplified equivalent circuit that can be used for fast SPICE-level simulations of crosstalk effects.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114816862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003358
N. Stojadinovic, I. Manic, S. Djoric-Veljkovic, V. Davidovic, D. Danković, S. Golubovic, S. Dimitrijev
Spontaneous recovery of threshold voltage and channel carrier mobility in positive gate bias stressed power VDMOSFETs and the underlying changes in gate oxide-trapped charge and interface trap densities are presented and analysed. Electron tunneling from neutral oxide traps associated with trivalent silicon /spl equiv/Si/sub o//sup ./ defects into the oxide conduction band is proposed as the main mechanism responsible for stress-induced buildup of positive oxide-trapped charge. Subsequent hole tunneling from the charged oxide traps /spl equiv/Si/sub o//sup +/ to interface-trap precursors /spl equiv/Si/sub s/-H is proposed as the dominant mechanism responsible for the interface trap buildup. A chain of mechanisms related to a presence of hydrogen species is proposed in order to explain changes of oxide-trapped charge and interface trap densities during the spontaneous recovery. Interface trap /spl equiv/Si/sub s//sup ./ passivation due to their reaction with hydrogen atoms is proposed as a main mechanism responsible for a decrease of interface trap density. Hydrogen molecule cracking at charged oxide traps /spl equiv/Si/sub o//sup +/, which leads to their neutralization, is proposed as the dominant mechanism responsible for a decrease of oxide-trapped charge density.
{"title":"Spontaneous recovery of positive gate bias stressed power VDMOSFETs","authors":"N. Stojadinovic, I. Manic, S. Djoric-Veljkovic, V. Davidovic, D. Danković, S. Golubovic, S. Dimitrijev","doi":"10.1109/MIEL.2002.1003358","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003358","url":null,"abstract":"Spontaneous recovery of threshold voltage and channel carrier mobility in positive gate bias stressed power VDMOSFETs and the underlying changes in gate oxide-trapped charge and interface trap densities are presented and analysed. Electron tunneling from neutral oxide traps associated with trivalent silicon /spl equiv/Si/sub o//sup ./ defects into the oxide conduction band is proposed as the main mechanism responsible for stress-induced buildup of positive oxide-trapped charge. Subsequent hole tunneling from the charged oxide traps /spl equiv/Si/sub o//sup +/ to interface-trap precursors /spl equiv/Si/sub s/-H is proposed as the dominant mechanism responsible for the interface trap buildup. A chain of mechanisms related to a presence of hydrogen species is proposed in order to explain changes of oxide-trapped charge and interface trap densities during the spontaneous recovery. Interface trap /spl equiv/Si/sub s//sup ./ passivation due to their reaction with hydrogen atoms is proposed as a main mechanism responsible for a decrease of interface trap density. Hydrogen molecule cracking at charged oxide traps /spl equiv/Si/sub o//sup +/, which leads to their neutralization, is proposed as the dominant mechanism responsible for a decrease of oxide-trapped charge density.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113934192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003372
S.S. Lornakin, G. Zebrev, D.V. Ivashin
It was shown experimentally that above threshold transconductance in investigated n-MOSFETs degrades after irradiation and short-term anneal only in subthreshold and moderate inversion regions. Subsequent durable anneal degrades transconductance on the whole operating gate bias range.
{"title":"Temperature response of irradiated MOSFETs","authors":"S.S. Lornakin, G. Zebrev, D.V. Ivashin","doi":"10.1109/MIEL.2002.1003372","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003372","url":null,"abstract":"It was shown experimentally that above threshold transconductance in investigated n-MOSFETs degrades after irradiation and short-term anneal only in subthreshold and moderate inversion regions. Subsequent durable anneal degrades transconductance on the whole operating gate bias range.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115006627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003338
S. Dordevic, P. Petkovi
This paper presents a new method for hierarchical analysis of large circuits that combine numeric and symbolic simulation. Symbolic analysis is applied only on subcircuits at the lowest hierarchical level. This approach proves beneficial for symbolic and numeric simulation. The time reduction is given on a benchmark example.
{"title":"Symbolic-numeric co-simulation of large analogue circuits","authors":"S. Dordevic, P. Petkovi","doi":"10.1109/MIEL.2002.1003338","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003338","url":null,"abstract":"This paper presents a new method for hierarchical analysis of large circuits that combine numeric and symbolic simulation. Symbolic analysis is applied only on subcircuits at the lowest hierarchical level. This approach proves beneficial for symbolic and numeric simulation. The time reduction is given on a benchmark example.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115294841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003153
D. Dubuc, K. Grenier, L. Rabbia, A. Tackac, M. Saadaoui, P. Pons, P. Caudrillier, O. Pascal, H. Aubert, H. Baudrand, J. Tao, P. Combes, J. Graffeuil, R. Plana
This paper presents a new family of components based on the MEMS and NEMS (nano-electromechanical system) concepts. They show very attractive properties for future wireless communications systems. The design of such components involves both electromagnetic simulations and mechanical and thermal modelling in order to get an accurate description of their electrical behavior.
{"title":"MEMS and NEMS technologies for wireless communications","authors":"D. Dubuc, K. Grenier, L. Rabbia, A. Tackac, M. Saadaoui, P. Pons, P. Caudrillier, O. Pascal, H. Aubert, H. Baudrand, J. Tao, P. Combes, J. Graffeuil, R. Plana","doi":"10.1109/MIEL.2002.1003153","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003153","url":null,"abstract":"This paper presents a new family of components based on the MEMS and NEMS (nano-electromechanical system) concepts. They show very attractive properties for future wireless communications systems. The design of such components involves both electromagnetic simulations and mechanical and thermal modelling in order to get an accurate description of their electrical behavior.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122890228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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