Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003197
J. Hadzi-Vukovic, M. Jevtic, D. Simic
In this paper, we present an analysis of phase noise distribution. Phase noise, of a designed and realized test oscillator, as a consequence of low frequency (LF) noise up-conversion was simulated. The analysis shows that low frequency noise sources, which are inside the oscillator transistor, give the pure Gaussian distribution of phase noise and LF noise sources located outwith the transistor change this distribution. This behavior could be explained by the influence of the transistor and the transistor's package impedance, which contribute to the signal delay. The microwave test oscillator is designed and realized with AlGaAs/InGaAs HEMTs.
{"title":"Phase noise amplitude distribution as indicator of origin of random phase perturbation in a test oscillator","authors":"J. Hadzi-Vukovic, M. Jevtic, D. Simic","doi":"10.1109/MIEL.2002.1003197","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003197","url":null,"abstract":"In this paper, we present an analysis of phase noise distribution. Phase noise, of a designed and realized test oscillator, as a consequence of low frequency (LF) noise up-conversion was simulated. The analysis shows that low frequency noise sources, which are inside the oscillator transistor, give the pure Gaussian distribution of phase noise and LF noise sources located outwith the transistor change this distribution. This behavior could be explained by the influence of the transistor and the transistor's package impedance, which contribute to the signal delay. The microwave test oscillator is designed and realized with AlGaAs/InGaAs HEMTs.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127628608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003201
V. Vanke
Russian experience in the field of non-traditional microwave electronics based on electron beam transverse waves use is discussed in this short review. Devices studied include the cyclotron wave protector and parametric amplifier, the cyclotron wave electrostatic amplifier, the circularly polarized TWT, and a cyclotron wave converter of microwaves in DC.
{"title":"Non-traditional microwave electronics based on electron beam transverse grouping","authors":"V. Vanke","doi":"10.1109/MIEL.2002.1003201","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003201","url":null,"abstract":"Russian experience in the field of non-traditional microwave electronics based on electron beam transverse waves use is discussed in this short review. Devices studied include the cyclotron wave protector and parametric amplifier, the cyclotron wave electrostatic amplifier, the circularly polarized TWT, and a cyclotron wave converter of microwaves in DC.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123820796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003148
Radivoje Popovic, P. Drljaca, Christian Schott
By integrating a magnetic flux concentrator (IMC) at the surface of a Hall magnetic sensor, we can dramatically improve its characteristics. Here we compare the performance of a new IMC Hall sensor ASIC with the performance of traditional magnetic field sensors, such as AMR, GMR, and conventional Hall sensor ASICs. We find that the detectivities of AMRs and GMRs for AC magnetic fields are much better than those of Hall ASICs; for low-frequency fields, the performance gap is smaller; but for DC fields, the resolution of the IMC Hall ASIC is much better than that of GMRs and approaches the resolution of a nonswitched AMR. Also according other parameters, the IMC Hall ASIC is positioned in the gap between AMRs, GMRs, and the conventional Hall ASIC magnetic field sensors.
{"title":"Bridging the gap between AMR, GMR, and Hall magnetic sensors","authors":"Radivoje Popovic, P. Drljaca, Christian Schott","doi":"10.1109/MIEL.2002.1003148","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003148","url":null,"abstract":"By integrating a magnetic flux concentrator (IMC) at the surface of a Hall magnetic sensor, we can dramatically improve its characteristics. Here we compare the performance of a new IMC Hall sensor ASIC with the performance of traditional magnetic field sensors, such as AMR, GMR, and conventional Hall sensor ASICs. We find that the detectivities of AMRs and GMRs for AC magnetic fields are much better than those of Hall ASICs; for low-frequency fields, the performance gap is smaller; but for DC fields, the resolution of the IMC Hall ASIC is much better than that of GMRs and approaches the resolution of a nonswitched AMR. Also according other parameters, the IMC Hall ASIC is positioned in the gap between AMRs, GMRs, and the conventional Hall ASIC magnetic field sensors.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123035254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003216
M. Scepanovi, I. Hinić, M. Jevtic
The results of photoluminescence (PL) measurements performed for Hg/sub 1-x/Cd/sub x/Te (x=0.165) samples are presented. The surfaces of these samples were modified using long exposure to the atmosphere (series A), etching by 0.5% Br-methanol during 1 minute (series B) and during 5 minutes (series C). For each series samples PL spectra were measured at different temperatures in the range from 16 to 300 K. PL bands at about 2.1 eV and 2.3 eV are recognized in PL spectra of each series samples. The analysis of PL and Raman spectra shows that the band at /spl sim/2.1 eV is caused by presence of the nonstoichiometric oxides. The band at 2.3 eV originates of organic compounds which are deposited at the surface during etching process. PL of the observed samples decreases after irradiation by intense nanosecond pulse of Nd:YAG laser.
{"title":"Photoluminescence caused by presence of defects and oxides at the surface of Hg/sub 1-x/Cd/sub x/Te","authors":"M. Scepanovi, I. Hinić, M. Jevtic","doi":"10.1109/MIEL.2002.1003216","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003216","url":null,"abstract":"The results of photoluminescence (PL) measurements performed for Hg/sub 1-x/Cd/sub x/Te (x=0.165) samples are presented. The surfaces of these samples were modified using long exposure to the atmosphere (series A), etching by 0.5% Br-methanol during 1 minute (series B) and during 5 minutes (series C). For each series samples PL spectra were measured at different temperatures in the range from 16 to 300 K. PL bands at about 2.1 eV and 2.3 eV are recognized in PL spectra of each series samples. The analysis of PL and Raman spectra shows that the band at /spl sim/2.1 eV is caused by presence of the nonstoichiometric oxides. The band at 2.3 eV originates of organic compounds which are deposited at the surface during etching process. PL of the observed samples decreases after irradiation by intense nanosecond pulse of Nd:YAG laser.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127793459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003175
R. Kakanakov, L. Kassamakova-Kolaklieva, N. Hristeva, G. Lepoeva, Konstantinos Zekentes
Ti/Al/p-SiC and Ni/n-SiC ohmic contacts with improved electrical and thermal properties in respect to their application in high power and high temperature SiC devices are reported in this work. Contact resistivity as a function of annealing was investigated over the temperature range of 700/spl deg/C -950/spl deg/C. The lowest resistivity of 1.42/spl times/10/sup -5/ /spl Omega/.cm/sup 2/ for the Ti/Al contact was obtained after annealing at 900/spl deg/C while for the Ni contact the lowest resistivity of 4.9/spl times/10/sup -6/ /spl Omega/ cm/sup 2/ was achieved at 950/spl deg/C. The contact stability during prolonged ageing and at high operating temperatures and current density was studied as a criterion for their reliability. It was found that both contacts were thermally stable during ageing in an inert ambient (N/sub 2/) at high temperature of 600/spl deg/C for 100 hours as well as at operating temperatures up to 450/spl deg/C in air and at current density of 10/sup 3/ A/cm/sup 2/ passed through the contacts during the heating. The improved electrical and thermal properties of the Ti/Al/p-SiC and Ni/n-SiC ohmic contacts were demonstrated in the power p-n SiC diode developed.
{"title":"Thermally stable low resistivity ohmic contacts for high power and high temperature SiC device applications","authors":"R. Kakanakov, L. Kassamakova-Kolaklieva, N. Hristeva, G. Lepoeva, Konstantinos Zekentes","doi":"10.1109/MIEL.2002.1003175","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003175","url":null,"abstract":"Ti/Al/p-SiC and Ni/n-SiC ohmic contacts with improved electrical and thermal properties in respect to their application in high power and high temperature SiC devices are reported in this work. Contact resistivity as a function of annealing was investigated over the temperature range of 700/spl deg/C -950/spl deg/C. The lowest resistivity of 1.42/spl times/10/sup -5/ /spl Omega/.cm/sup 2/ for the Ti/Al contact was obtained after annealing at 900/spl deg/C while for the Ni contact the lowest resistivity of 4.9/spl times/10/sup -6/ /spl Omega/ cm/sup 2/ was achieved at 950/spl deg/C. The contact stability during prolonged ageing and at high operating temperatures and current density was studied as a criterion for their reliability. It was found that both contacts were thermally stable during ageing in an inert ambient (N/sub 2/) at high temperature of 600/spl deg/C for 100 hours as well as at operating temperatures up to 450/spl deg/C in air and at current density of 10/sup 3/ A/cm/sup 2/ passed through the contacts during the heating. The improved electrical and thermal properties of the Ti/Al/p-SiC and Ni/n-SiC ohmic contacts were demonstrated in the power p-n SiC diode developed.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":"165 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125164873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003356
E. Atanassova, D. Spassov
Tantalum pentoxide thin layers (10-100 nm) obtained by thermal oxidation of rf sputtered Ta films on Si have been investigated with respect to their dielectric, structural and electrical properties. It is established that stoichiometric Ta/sub 2/O/sub 5/ detected at the surface of the layers is reduced to tantalum suboxides in their depth. The oxide parameters are discussed in terms of a presence of an unavoidable ultrathin SiO/sub 2/ between Si and Ta/sub 2/O/sub 5/ and bond defects in both the oxide and the interface transition region. Conditions which guarantee obtaining high quality tantalum oxide with a dielectric constant of 32 - 35 and a leakage current less than 10/sup -7/ - 10/sup -8/ A/cm/sup 2/ at 1.5 V (SiO/sub 2/ equivalent thickness of 2.5 - 3 nm) are established. These specifications make the layers obtained suitable alternative to SiO/sub 2/ for high density DRAMs application.
{"title":"Thermal Ta/sub 2/O/sub 5/ - alternative to SiO/sub 2/ for high density dynamic memories","authors":"E. Atanassova, D. Spassov","doi":"10.1109/MIEL.2002.1003356","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003356","url":null,"abstract":"Tantalum pentoxide thin layers (10-100 nm) obtained by thermal oxidation of rf sputtered Ta films on Si have been investigated with respect to their dielectric, structural and electrical properties. It is established that stoichiometric Ta/sub 2/O/sub 5/ detected at the surface of the layers is reduced to tantalum suboxides in their depth. The oxide parameters are discussed in terms of a presence of an unavoidable ultrathin SiO/sub 2/ between Si and Ta/sub 2/O/sub 5/ and bond defects in both the oxide and the interface transition region. Conditions which guarantee obtaining high quality tantalum oxide with a dielectric constant of 32 - 35 and a leakage current less than 10/sup -7/ - 10/sup -8/ A/cm/sup 2/ at 1.5 V (SiO/sub 2/ equivalent thickness of 2.5 - 3 nm) are established. These specifications make the layers obtained suitable alternative to SiO/sub 2/ for high density DRAMs application.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":"39 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131998724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003206
Kh. Khudaverdyan, H. Harutyunyan
The silicide-silicon-silicide type photoreceiving structures recrystallized by laser, currently studied differ efficiently from conventional photoreceivers in their multifunctional operation. In them, the photosensitivity can be controlled by the external voltage and the device can be used as a zero frequency gauge due to dependence of the photocurrent on the external voltage of the mark shift point. This work is the first to investigate the influence of the photoemission from the contact on the spectral characteristics of the afore-mentioned structures.
{"title":"Study of photo-emission current impact on spectral characteristics of double barrier photo-receiving structure [NiSi-Si-TiSi/sub 2/]","authors":"Kh. Khudaverdyan, H. Harutyunyan","doi":"10.1109/MIEL.2002.1003206","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003206","url":null,"abstract":"The silicide-silicon-silicide type photoreceiving structures recrystallized by laser, currently studied differ efficiently from conventional photoreceivers in their multifunctional operation. In them, the photosensitivity can be controlled by the external voltage and the device can be used as a zero frequency gauge due to dependence of the photocurrent on the external voltage of the mark shift point. This work is the first to investigate the influence of the photoemission from the contact on the spectral characteristics of the afore-mentioned structures.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":"152 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131811739","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003372
S.S. Lornakin, G. Zebrev, D.V. Ivashin
It was shown experimentally that above threshold transconductance in investigated n-MOSFETs degrades after irradiation and short-term anneal only in subthreshold and moderate inversion regions. Subsequent durable anneal degrades transconductance on the whole operating gate bias range.
{"title":"Temperature response of irradiated MOSFETs","authors":"S.S. Lornakin, G. Zebrev, D.V. Ivashin","doi":"10.1109/MIEL.2002.1003372","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003372","url":null,"abstract":"It was shown experimentally that above threshold transconductance in investigated n-MOSFETs degrades after irradiation and short-term anneal only in subthreshold and moderate inversion regions. Subsequent durable anneal degrades transconductance on the whole operating gate bias range.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":"251 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115006627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003321
V. Liberali
This paper illustrates a simple model for calculation and experimental evaluation of epi layer resistance. The model can be used during early stages of mixed-signal integrated circuit design, to estimate the effects of switching noise injection from digital cells to analog circuitry. Moreover, the proposed model leads to a simplified equivalent circuit that can be used for fast SPICE-level simulations of crosstalk effects.
{"title":"Evaluation of epi layer resistivity effects in mixed-signal submicron CMOS integrated circuits","authors":"V. Liberali","doi":"10.1109/MIEL.2002.1003321","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003321","url":null,"abstract":"This paper illustrates a simple model for calculation and experimental evaluation of epi layer resistance. The model can be used during early stages of mixed-signal integrated circuit design, to estimate the effects of switching noise injection from digital cells to analog circuitry. Moreover, the proposed model leads to a simplified equivalent circuit that can be used for fast SPICE-level simulations of crosstalk effects.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":"771 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114816862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003305
Ping He, Wensong Chen, L. Tian, Litian Liu, Zhijian Li
Using the variational method, the two dimensional Poisson Equation is solved in the MOSFET device region including the gate oxide region, depletion region and buried oxide region (for SOI device). An analytical expression for the potential distribution together with a new natural gate length scale for MOSFET is derived. The 2-D effects in front gate dielectric, back gate dielectric and silicon film can all be taken into account in this derivation. The validity of electrical equivalent oxide thickness approximation is also investigated using this model. Comparison of the short channel effect for uniform channel doping bulk MOSFET, intrinsic channel doping bulk MOSFET, SOI MOSFET and double gated MOSFET is conducted using our model. The results are verified by 2D numerical simulation using the 2D device simulator MEDICI.
{"title":"Unified MOSFET scaling theory using variational method","authors":"Ping He, Wensong Chen, L. Tian, Litian Liu, Zhijian Li","doi":"10.1109/MIEL.2002.1003305","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003305","url":null,"abstract":"Using the variational method, the two dimensional Poisson Equation is solved in the MOSFET device region including the gate oxide region, depletion region and buried oxide region (for SOI device). An analytical expression for the potential distribution together with a new natural gate length scale for MOSFET is derived. The 2-D effects in front gate dielectric, back gate dielectric and silicon film can all be taken into account in this derivation. The validity of electrical equivalent oxide thickness approximation is also investigated using this model. Comparison of the short channel effect for uniform channel doping bulk MOSFET, intrinsic channel doping bulk MOSFET, SOI MOSFET and double gated MOSFET is conducted using our model. The results are verified by 2D numerical simulation using the 2D device simulator MEDICI.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117043325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：