Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003159
C. Chang, T. Chao, H. Lin, C. Chien
Crucial process-related reliability issues, such as boron penetration, plasma charging damage, metal-gate processing, and emerging high-k dielectrics, as device scaling progresses towards sub-100 nm technology nodes are discussed in this paper.
{"title":"Process-related reliability issues toward sub-100 nm device regime","authors":"C. Chang, T. Chao, H. Lin, C. Chien","doi":"10.1109/MIEL.2002.1003159","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003159","url":null,"abstract":"Crucial process-related reliability issues, such as boron penetration, plasma charging damage, metal-gate processing, and emerging high-k dielectrics, as device scaling progresses towards sub-100 nm technology nodes are discussed in this paper.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128611559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003188
T. Nenov, Z. Nenova
The paper deals with V/sub 2/O/sub 5/-based ceramic temperature sensors. They are composed of two integrated sensors: a ceramic based thermistor and a critical temperature resistor formed by additional treatment in the ceramics structure. The main characteristics of the multifunctional temperature sensor are studied in the paper.
{"title":"Multifunctional temperature sensor","authors":"T. Nenov, Z. Nenova","doi":"10.1109/MIEL.2002.1003188","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003188","url":null,"abstract":"The paper deals with V/sub 2/O/sub 5/-based ceramic temperature sensors. They are composed of two integrated sensors: a ceramic based thermistor and a critical temperature resistor formed by additional treatment in the ceramics structure. The main characteristics of the multifunctional temperature sensor are studied in the paper.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131747272","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003294
A. Cerdeira, R. Quintero, M. Estrada, D. Flandre, A. Ortiz-Conde, F. Garcia Sanchez
The harmonic distortion introduced by MOS transistors is a property of major importance regarding their analog applications. In recent papers we presented a new integral function method (IFM) to calculate total harmonic distortion (THD) and the third harmonic component (HD3) of MOSFET based on the direct analysis of the non-linearity of the DC I/sub DS/-V/sub DS/ characteristic of the device for a fixed gate voltage. To evaluate this non-linearity, we defined an integral function, which will be called D hereafter, to calculate an integral equation of the I/sub DS/-V/sub DS/ characteristic, and in order to eliminate the even harmonics, a second function, which we call D3 was also defined. In this paper we generalize the IFM to analyze the case where several MOSFET pairs (balanced 2-MOSFET and double balanced 4-MOSFET structures) are used in order to eliminate the even harmonics. Real transistors always show some mismatch in their parameters that become apparent even in these balanced circuits. For the generalized IFM a new function Da is defined and used to analyze the effect of variation of transistor parameters. The efficiency of the new method is demonstrated analyzing the harmonic distortion in a balanced circuit, where typical variations of the threshold voltage if the transistors is taken into account.
{"title":"Generalization of the integral function method to evaluate distortion in SOI FD MOSFET","authors":"A. Cerdeira, R. Quintero, M. Estrada, D. Flandre, A. Ortiz-Conde, F. Garcia Sanchez","doi":"10.1109/MIEL.2002.1003294","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003294","url":null,"abstract":"The harmonic distortion introduced by MOS transistors is a property of major importance regarding their analog applications. In recent papers we presented a new integral function method (IFM) to calculate total harmonic distortion (THD) and the third harmonic component (HD3) of MOSFET based on the direct analysis of the non-linearity of the DC I/sub DS/-V/sub DS/ characteristic of the device for a fixed gate voltage. To evaluate this non-linearity, we defined an integral function, which will be called D hereafter, to calculate an integral equation of the I/sub DS/-V/sub DS/ characteristic, and in order to eliminate the even harmonics, a second function, which we call D3 was also defined. In this paper we generalize the IFM to analyze the case where several MOSFET pairs (balanced 2-MOSFET and double balanced 4-MOSFET structures) are used in order to eliminate the even harmonics. Real transistors always show some mismatch in their parameters that become apparent even in these balanced circuits. For the generalized IFM a new function Da is defined and used to analyze the effect of variation of transistor parameters. The efficiency of the new method is demonstrated analyzing the harmonic distortion in a balanced circuit, where typical variations of the threshold voltage if the transistors is taken into account.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131349940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003145
Mikael Östling, Sang-Mo Koo, S. Lee, E. Danielsson, M. Domeij, C. Zetterling
Recently, silicon carbide (SiC) has drawn considerable attention as a suitable semiconductor material for high power, high frequency, high temperature and radiation resistant devices. The commercialized substrates and the experimental device prototypes in SiC show the promises while the continued improvements in fabrication techniques are required for economically viable productions to be widespread. This paper reviews the progress and current issues in SiC device process technology and the state-of-the art SiC devices for high voltage and RF power applications.
{"title":"SiC device technology for high voltage and RF power applications","authors":"Mikael Östling, Sang-Mo Koo, S. Lee, E. Danielsson, M. Domeij, C. Zetterling","doi":"10.1109/MIEL.2002.1003145","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003145","url":null,"abstract":"Recently, silicon carbide (SiC) has drawn considerable attention as a suitable semiconductor material for high power, high frequency, high temperature and radiation resistant devices. The commercialized substrates and the experimental device prototypes in SiC show the promises while the continued improvements in fabrication techniques are required for economically viable productions to be widespread. This paper reviews the progress and current issues in SiC device process technology and the state-of-the art SiC devices for high voltage and RF power applications.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116083335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003160
P. Cova, R. Menozzi, M. Portesine
We describe a coupled experimental-numerical study of the effect of proton irradiation on the inductive turn-off of fast-recovery p-i-n diodes for snubberless applications. The goal is to avoid the large overvoltages and spurious oscillations that may arise at switch-off and jeopardize the diode's reliability. We evaluated different proton irradiation profiles in order to extract indications on the optimum trade-off among switching speed, recovery softness, overvoltage and spurious oscillation damping.
{"title":"H/sup +/ irradiation for reverse recovery softness and reliability of power p-i-n diodes for snubberless applications","authors":"P. Cova, R. Menozzi, M. Portesine","doi":"10.1109/MIEL.2002.1003160","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003160","url":null,"abstract":"We describe a coupled experimental-numerical study of the effect of proton irradiation on the inductive turn-off of fast-recovery p-i-n diodes for snubberless applications. The goal is to avoid the large overvoltages and spurious oscillations that may arise at switch-off and jeopardize the diode's reliability. We evaluated different proton irradiation profiles in order to extract indications on the optimum trade-off among switching speed, recovery softness, overvoltage and spurious oscillation damping.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121488903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003190
B. Vojnovic
Measurement of delay-time (arrival-time) of pulse signals from various sensors (optical detectors, radiation detectors, etc.) have important applications in many scientific and technical fields. The measurement chain contains the following parts: sensor (detector), electronic preamplifier of pulse signal from sensor, signal processing circuits, and timing discriminator. We analyze the influence of pulse amplitude and rise-time variations, noise effects and energy (charge) sensitivity of discriminator triggering on the over-all timing resolution for three types of discriminator. The ultimate goal in all measurements is to determine pulse arrival-time with minimum error, which depends on signal parameters as well as on discriminator circuit parameters.
{"title":"Error minimization of sensor pulse signal delay-time measurements","authors":"B. Vojnovic","doi":"10.1109/MIEL.2002.1003190","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003190","url":null,"abstract":"Measurement of delay-time (arrival-time) of pulse signals from various sensors (optical detectors, radiation detectors, etc.) have important applications in many scientific and technical fields. The measurement chain contains the following parts: sensor (detector), electronic preamplifier of pulse signal from sensor, signal processing circuits, and timing discriminator. We analyze the influence of pulse amplitude and rise-time variations, noise effects and energy (charge) sensitivity of discriminator triggering on the over-all timing resolution for three types of discriminator. The ultimate goal in all measurements is to determine pulse arrival-time with minimum error, which depends on signal parameters as well as on discriminator circuit parameters.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117331824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003317
M. Blyzniuk, I. Kazymyra
The parametric sensitivity of defect size distribution in VLSI defect/fault analysis is evaluated. The use of special software tool FIESTA for the computational experiment aimed at estimation of the significance of parameters in expressions approximating the actual defect distribution is considered. The obtained experimental results and their usefulness have been analysed.
{"title":"Estimation of parametric sensitivity for defects size distribution in VLSI defect/fault analysis","authors":"M. Blyzniuk, I. Kazymyra","doi":"10.1109/MIEL.2002.1003317","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003317","url":null,"abstract":"The parametric sensitivity of defect size distribution in VLSI defect/fault analysis is evaluated. The use of special software tool FIESTA for the computational experiment aimed at estimation of the significance of parameters in expressions approximating the actual defect distribution is considered. The obtained experimental results and their usefulness have been analysed.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123297639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003361
P. Habaš
Hot-carrier-induced NMOST degradation is considered for periodic drain-source signal. A general lifetime relationship is derived on the basis of quasi-static approximation and a lifetime model for DC condition. Two practical cases are discussed: sinusoidal drain signal from 0V to V/sub DD/ (circuit supply) and trapezoidal signal from 0V to V/sub DD/ (in special case, it reduces to triangular waveform). Compact, practically useful, formulas are proposed. The model for AC conditions is based on the same physical approximations that are traditionally used in the derivation of physically crude, but well applicable lifetime models in DC conditions. A strategy is proposed for building-in HC-reliability of NMOSFET subjected to a periodic large drain-signals in analog circuits.
{"title":"Hot-carrier NMOST degradation at periodic drain signal","authors":"P. Habaš","doi":"10.1109/MIEL.2002.1003361","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003361","url":null,"abstract":"Hot-carrier-induced NMOST degradation is considered for periodic drain-source signal. A general lifetime relationship is derived on the basis of quasi-static approximation and a lifetime model for DC condition. Two practical cases are discussed: sinusoidal drain signal from 0V to V/sub DD/ (circuit supply) and trapezoidal signal from 0V to V/sub DD/ (in special case, it reduces to triangular waveform). Compact, practically useful, formulas are proposed. The model for AC conditions is based on the same physical approximations that are traditionally used in the derivation of physically crude, but well applicable lifetime models in DC conditions. A strategy is proposed for building-in HC-reliability of NMOSFET subjected to a periodic large drain-signals in analog circuits.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127668752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003349
Aleksandra Seši, Veljko Malbaša
An exercise in formal specification and design of an asynchronous controller that leads to the CMOS implementation is presented. In this paper we focus on the formal specification of the controller by using communication sequential process, a tool based on Hoare's CSP. We also present the procedure, based on Martin's synthesis method, used to formally derive the preliminary design of the asynchronous traffic light controller. The formal specification and circuit implementation are formally verified with a verification tool package STTools, capable of model checking and simulating programs.
{"title":"Formal specification and preliminary design of an asynchronous traffic light controller","authors":"Aleksandra Seši, Veljko Malbaša","doi":"10.1109/MIEL.2002.1003349","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003349","url":null,"abstract":"An exercise in formal specification and design of an asynchronous controller that leads to the CMOS implementation is presented. In this paper we focus on the formal specification of the controller by using communication sequential process, a tool based on Hoare's CSP. We also present the procedure, based on Martin's synthesis method, used to formally derive the preliminary design of the asynchronous traffic light controller. The formal specification and circuit implementation are formally verified with a verification tool package STTools, capable of model checking and simulating programs.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130014525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003189
D. Randjelović, G. Kaltsas, Ž. Lazić, M. Popovic
This paper reports a multipurpose thermal sensor based on the Seebeck effect. The sensor has thermocouples with a multilayer structure consisting of one thermocouple strip laying on the insulating membrane and the other one under the first thermoelement and the membrane. The vertical arrangement allows a greater number of thermocouples to be placed on a given chip area. Central and lateral thermistors are placed near hot and cold thermocouple junctions, respectively, and serve for determination of the temperature difference established on the chip. Experimental results confirm that the same structure could be used as a thermal converter and a gas flow meter.
{"title":"Multipurpose thermal sensor based on Seebeck effect","authors":"D. Randjelović, G. Kaltsas, Ž. Lazić, M. Popovic","doi":"10.1109/MIEL.2002.1003189","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003189","url":null,"abstract":"This paper reports a multipurpose thermal sensor based on the Seebeck effect. The sensor has thermocouples with a multilayer structure consisting of one thermocouple strip laying on the insulating membrane and the other one under the first thermoelement and the membrane. The vertical arrangement allows a greater number of thermocouples to be placed on a given chip area. Central and lateral thermistors are placed near hot and cold thermocouple junctions, respectively, and serve for determination of the temperature difference established on the chip. Experimental results confirm that the same structure could be used as a thermal converter and a gas flow meter.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127444742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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