Pub Date : 2011-12-01DOI: 10.1142/S0218126611008055
Z. Stamenkovic
The paper emphasizes methods, architectures and components for system-on-chip design. It describes the basic knowledge and skills for designing high-performance low-power embedded devices whose complexity increases exponentially, as so does the effort of designing them. Relying upon an appropriate design methodology which concentrates on reuse, executable specifications, and early error detection, these complexities can be mastered. The paper bundles these topics in order to provide a good understanding of all problems involved. It shows how to go from description and verification to implementation and testing presenting two systems-on-chip for two different wireless applications based on configurable processors and custom hardware accelerators.
{"title":"SOC design for wireless communications","authors":"Z. Stamenkovic","doi":"10.1142/S0218126611008055","DOIUrl":"https://doi.org/10.1142/S0218126611008055","url":null,"abstract":"The paper emphasizes methods, architectures and components for system-on-chip design. It describes the basic knowledge and skills for designing high-performance low-power embedded devices whose complexity increases exponentially, as so does the effort of designing them. Relying upon an appropriate design methodology which concentrates on reuse, executable specifications, and early error detection, these complexities can be mastered. The paper bundles these topics in order to provide a good understanding of all problems involved. It shows how to go from description and verification to implementation and testing presenting two systems-on-chip for two different wireless applications based on configurable processors and custom hardware accelerators.","PeriodicalId":228594,"journal":{"name":"2010 12th Biennial Baltic Electronics Conference","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124627460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-11-11DOI: 10.1109/BEC.2010.5630749
E. Moorits, A. Usk
This paper presents a numerically efficient method developed for obtaining heel angle information on navigational buoys by the use of onboard low power embedded controllers equipped with solid state acceleration sensors, focusing on the signal processing principles employed. Calculation of the buoy heel (tilt angle or inclination) is based on continuous measurement of acceleration of the buoy in all three planes of movement, accomplished using a 3-axial solid state accelerometer (g-sensor) with the maximum range of ±3 g. The sensor is integrated with an Aid to Navigation (AtoN) telematics module that is subject to low power consumption requirements and size restrictions resulting in limited computational capability. Results of tests performed on operational marine buoys are presented at the end of the article.
{"title":"A numerically efficient method for calculation of the angle of heel of a navigational buoy","authors":"E. Moorits, A. Usk","doi":"10.1109/BEC.2010.5630749","DOIUrl":"https://doi.org/10.1109/BEC.2010.5630749","url":null,"abstract":"This paper presents a numerically efficient method developed for obtaining heel angle information on navigational buoys by the use of onboard low power embedded controllers equipped with solid state acceleration sensors, focusing on the signal processing principles employed. Calculation of the buoy heel (tilt angle or inclination) is based on continuous measurement of acceleration of the buoy in all three planes of movement, accomplished using a 3-axial solid state accelerometer (g-sensor) with the maximum range of ±3 g. The sensor is integrated with an Aid to Navigation (AtoN) telematics module that is subject to low power consumption requirements and size restrictions resulting in limited computational capability. Results of tests performed on operational marine buoys are presented at the end of the article.","PeriodicalId":228594,"journal":{"name":"2010 12th Biennial Baltic Electronics Conference","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123452536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-11-11DOI: 10.1109/BEC.2010.5630910
N. Sleptsuk, O. Korolkov, J. Toompuu, T. Rang
The comparison of JBS chips and JBS stacks connected in series by diffusion welding DW has been made using deep level spectroscopy (DLTS). As it was expected, JBS stacks are characterized by higher volumes of reverse voltage (Ur), higher series resistance (Rs) and, therefore, higher forward voltage (Uf). In the stacks two times reducing of capacitance has been fixed. Diffusion welding (DW) technique used for stacks allows to solve many packaging problems, in particular - reduction of thermal resistance and incresing in operation temperature.
{"title":"Comparison of individual SiC JBS chips and JBS stacks connected in series by diffusion welding","authors":"N. Sleptsuk, O. Korolkov, J. Toompuu, T. Rang","doi":"10.1109/BEC.2010.5630910","DOIUrl":"https://doi.org/10.1109/BEC.2010.5630910","url":null,"abstract":"The comparison of JBS chips and JBS stacks connected in series by diffusion welding DW has been made using deep level spectroscopy (DLTS). As it was expected, JBS stacks are characterized by higher volumes of reverse voltage (Ur), higher series resistance (Rs) and, therefore, higher forward voltage (Uf). In the stacks two times reducing of capacitance has been fixed. Diffusion welding (DW) technique used for stacks allows to solve many packaging problems, in particular - reduction of thermal resistance and incresing in operation temperature.","PeriodicalId":228594,"journal":{"name":"2010 12th Biennial Baltic Electronics Conference","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125365069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-11-11DOI: 10.1109/BEC.2010.5630288
M. Bahrami, Zahra Haddad Derafshi, Mir Razi Mousavi, Mazdak Rad Malekshahi
This paper presents the comparative study of different current carrying structures used to produce electromagnetic field in magnetic based micro-pumps. The operation of the micropump lies on magnetic field that concentrates microbeads in the fluid channel and moves this cluster of microbeads in each direction forcing the fluid to flow in that direction. In this paper Finite Element simulation results of novel and simple structures which produces suitable magnetic field inside the channel is presented.
{"title":"Comparative study of different current carrying structures used as electromagnetic actuator","authors":"M. Bahrami, Zahra Haddad Derafshi, Mir Razi Mousavi, Mazdak Rad Malekshahi","doi":"10.1109/BEC.2010.5630288","DOIUrl":"https://doi.org/10.1109/BEC.2010.5630288","url":null,"abstract":"This paper presents the comparative study of different current carrying structures used to produce electromagnetic field in magnetic based micro-pumps. The operation of the micropump lies on magnetic field that concentrates microbeads in the fluid channel and moves this cluster of microbeads in each direction forcing the fluid to flow in that direction. In this paper Finite Element simulation results of novel and simple structures which produces suitable magnetic field inside the channel is presented.","PeriodicalId":228594,"journal":{"name":"2010 12th Biennial Baltic Electronics Conference","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115106485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-11-11DOI: 10.1109/BEC.2010.5630220
S. Mosin
The structural solution of built-in self test for analog and mixed-signal IC based on reconfiguring original circuit in oscillator has been proposed. The principles of functioning and main components of the solution have been considered. The experimental results for active filter have been shown.
{"title":"Structural solution of reconfiguration based built-in self-test for analog and mixed-signal IC","authors":"S. Mosin","doi":"10.1109/BEC.2010.5630220","DOIUrl":"https://doi.org/10.1109/BEC.2010.5630220","url":null,"abstract":"The structural solution of built-in self test for analog and mixed-signal IC based on reconfiguring original circuit in oscillator has been proposed. The principles of functioning and main components of the solution have been considered. The experimental results for active filter have been shown.","PeriodicalId":228594,"journal":{"name":"2010 12th Biennial Baltic Electronics Conference","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114592972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-11-11DOI: 10.1109/BEC.2010.5630879
D. Vinnikov, I. Roasto, T. Jalakas
The quasi-Z-source inverter is a very attractive topology because of its unique capability of voltage boost and buck functions in a single stage. But its voltage boost property could be a limiting feature in some applications where very high input voltage gain is required. The input voltage gain could be extended by the implementation of the cascaded quasi-impedance network. This paper discusses two novel extended boost quasi-Z-source inverters. Steady state analysis of topologies operating in continuous conduction mode is presented. Performances of topologies were compared and experimentally validated.
{"title":"Comparative study of capacitor-assisted extended boost qZSIs operating in continuous conduction mode","authors":"D. Vinnikov, I. Roasto, T. Jalakas","doi":"10.1109/BEC.2010.5630879","DOIUrl":"https://doi.org/10.1109/BEC.2010.5630879","url":null,"abstract":"The quasi-Z-source inverter is a very attractive topology because of its unique capability of voltage boost and buck functions in a single stage. But its voltage boost property could be a limiting feature in some applications where very high input voltage gain is required. The input voltage gain could be extended by the implementation of the cascaded quasi-impedance network. This paper discusses two novel extended boost quasi-Z-source inverters. Steady state analysis of topologies operating in continuous conduction mode is presented. Performances of topologies were compared and experimentally validated.","PeriodicalId":228594,"journal":{"name":"2010 12th Biennial Baltic Electronics Conference","volume":"6 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116815423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-11-11DOI: 10.1109/BEC.2010.5631152
K. Vassiljeva, E. Petlenkov, J. Belikov
For the best model identification a set of neural networks (NNs) must be trained. First of all it is necessary to obtain the optimal structure of the NN. In addition a good choice of the initial values of the NN parameters can be of tremendous help in a successful control application. Further fit of the model is evaluated using several control criteria, and the optimal among them is selected. This article presents an automated NN model selection method for control based on feedback linearization.
{"title":"Automated neural network model selection algorithm for feedback linearization based control","authors":"K. Vassiljeva, E. Petlenkov, J. Belikov","doi":"10.1109/BEC.2010.5631152","DOIUrl":"https://doi.org/10.1109/BEC.2010.5631152","url":null,"abstract":"For the best model identification a set of neural networks (NNs) must be trained. First of all it is necessary to obtain the optimal structure of the NN. In addition a good choice of the initial values of the NN parameters can be of tremendous help in a successful control application. Further fit of the model is evaluated using several control criteria, and the optimal among them is selected. This article presents an automated NN model selection method for control based on feedback linearization.","PeriodicalId":228594,"journal":{"name":"2010 12th Biennial Baltic Electronics Conference","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128625897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-11-11DOI: 10.1109/BEC.2010.5631683
J. Jankovskis, D. Stepins, D. Pikulins
In the research the examination of the methods possible to improve the implementation of spread spectrum technique for EMI reduction in switch mode power supplies are searched. The analysis of effects of switching frequency modulation in open loop boost converter reveals that there is additional undesirable amplitude modulation of the input current of the converter. This effect distorted the spectrum of the input current, thus worsening the EMI reduction, achieved by the use of the frequency modulation. Experimental results, using sinusoidal and sawtooth modulating signals, proved the theoretical assumption, asserting that the effectiveness of EMI attenuation and the reduction of spectral asymmetry could be achieved choosing as high as possible operating frequencies and proper modulating profiles.
{"title":"Improving effectiveness of the use of frequency modulation in power converters","authors":"J. Jankovskis, D. Stepins, D. Pikulins","doi":"10.1109/BEC.2010.5631683","DOIUrl":"https://doi.org/10.1109/BEC.2010.5631683","url":null,"abstract":"In the research the examination of the methods possible to improve the implementation of spread spectrum technique for EMI reduction in switch mode power supplies are searched. The analysis of effects of switching frequency modulation in open loop boost converter reveals that there is additional undesirable amplitude modulation of the input current of the converter. This effect distorted the spectrum of the input current, thus worsening the EMI reduction, achieved by the use of the frequency modulation. Experimental results, using sinusoidal and sawtooth modulating signals, proved the theoretical assumption, asserting that the effectiveness of EMI attenuation and the reduction of spectral asymmetry could be achieved choosing as high as possible operating frequencies and proper modulating profiles.","PeriodicalId":228594,"journal":{"name":"2010 12th Biennial Baltic Electronics Conference","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129139416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-11-11DOI: 10.1109/BEC.2010.5630656
T. Saar, O. Martens, M. Reidla, A. Ronk
Impedance spectroscopy is widely used in various test& measurement fields and applications. In current paper a novel approach of excitation with chirp signal with simple time-domain analysis of response signal for such task is introduced and described with examples of measurement of the electro-mechanical impedance of piezo-sensors, in the frequency range of several hundred kiloherz. In one approach smoothed separately (by Savitzky-Golay filter) of excitation voltage and (current) response signals in a sliding window are found and their ratio is used for impedance module estimation, at corresponding time and frequency values. Alternative method for vector measurement of impedance spectra in time domain has also tested.
{"title":"Chirp-based impedance spectroscopy of piezo-sensors","authors":"T. Saar, O. Martens, M. Reidla, A. Ronk","doi":"10.1109/BEC.2010.5630656","DOIUrl":"https://doi.org/10.1109/BEC.2010.5630656","url":null,"abstract":"Impedance spectroscopy is widely used in various test& measurement fields and applications. In current paper a novel approach of excitation with chirp signal with simple time-domain analysis of response signal for such task is introduced and described with examples of measurement of the electro-mechanical impedance of piezo-sensors, in the frequency range of several hundred kiloherz. In one approach smoothed separately (by Savitzky-Golay filter) of excitation voltage and (current) response signals in a sliding window are found and their ratio is used for impedance module estimation, at corresponding time and frequency values. Alternative method for vector measurement of impedance spectra in time domain has also tested.","PeriodicalId":228594,"journal":{"name":"2010 12th Biennial Baltic Electronics Conference","volume":"217 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130312217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-11-11DOI: 10.1109/BEC.2010.5630592
V. Kašauskas, R. Anilionis
MOS transistor structures are widely used in modern integrated circuits (IC). Different manufacturing methods are used. Many problems, such as the length, width of the channel, the overlap of source and drain areas with gate area, the diffusion of impurities after HTTO (high temperature technological operations). The solutions for all these problems are based on the mode of manufacturing processes and its optimization, and that is another problem. In this paper, models are selected and described and the results of modeling are presented. These models evaluate the influence of lateral implantation modes for MOS transistor output characteristics, and the influence for MOS transistor output characteristics. Technological structure problems which appeared in modeling of the exact case MOS are analyzed.
{"title":"Modeling of structures and characteristics in MOS made of ion implantation technological processes","authors":"V. Kašauskas, R. Anilionis","doi":"10.1109/BEC.2010.5630592","DOIUrl":"https://doi.org/10.1109/BEC.2010.5630592","url":null,"abstract":"MOS transistor structures are widely used in modern integrated circuits (IC). Different manufacturing methods are used. Many problems, such as the length, width of the channel, the overlap of source and drain areas with gate area, the diffusion of impurities after HTTO (high temperature technological operations). The solutions for all these problems are based on the mode of manufacturing processes and its optimization, and that is another problem. In this paper, models are selected and described and the results of modeling are presented. These models evaluate the influence of lateral implantation modes for MOS transistor output characteristics, and the influence for MOS transistor output characteristics. Technological structure problems which appeared in modeling of the exact case MOS are analyzed.","PeriodicalId":228594,"journal":{"name":"2010 12th Biennial Baltic Electronics Conference","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132294476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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