Pub Date : 2007-06-10DOI: 10.1109/SENSOR.2007.4300230
H. Chetouani, V. Haguet, C. Jeandey, C. Pigot, A. Walther, N. Dempsey, F. Chatelain, B. Delinchant, G. Reyne
We show here that diamagnetic beads and living cells can be trapped using magnetic fields and gradients produced by structures of permanent magnets. First, four different techniques to fabricate levitation-compatible magnet configurations in both millimeter and micrometer scales are described. Then, the magnet structures are applied to levitate diamagnetic bodies in air and/or paramagnetic buffered liquids. This technique allows contactless manipulation of the particles, avoiding the risk of adhesion and contamination which might appear using classical handling technologies such as channel-based microfluidics.
{"title":"Diamagnetic Levitation of Beads and Cells Above Permanent Magnets","authors":"H. Chetouani, V. Haguet, C. Jeandey, C. Pigot, A. Walther, N. Dempsey, F. Chatelain, B. Delinchant, G. Reyne","doi":"10.1109/SENSOR.2007.4300230","DOIUrl":"https://doi.org/10.1109/SENSOR.2007.4300230","url":null,"abstract":"We show here that diamagnetic beads and living cells can be trapped using magnetic fields and gradients produced by structures of permanent magnets. First, four different techniques to fabricate levitation-compatible magnet configurations in both millimeter and micrometer scales are described. Then, the magnet structures are applied to levitate diamagnetic bodies in air and/or paramagnetic buffered liquids. This technique allows contactless manipulation of the particles, avoiding the risk of adhesion and contamination which might appear using classical handling technologies such as channel-based microfluidics.","PeriodicalId":23295,"journal":{"name":"TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73716558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-06-10DOI: 10.1109/SENSOR.2007.4300240
K. Gantz, M. Agah
This paper presents the results of an investigation into the effect of geometrical patterns of the photomask on the dimensions of the trench that evolves after silicon isotropic etching. The study is based on the most complex surface pattern to date, composed of five independent geometric variables. Data from over 180 different patterns was collected to examine the influence of each parameter on the result. Two Langmuir-based models were developed relating the channel depth and width dimensions to the exposed pattern. These new models provide the capability to design complex microfluidic networks using only a single mask with channel dimensions predicted to 5% of their actual value.
{"title":"Predictable Three-Dimensional Microfluidic Channel Fabrication in a Single-Mask Process","authors":"K. Gantz, M. Agah","doi":"10.1109/SENSOR.2007.4300240","DOIUrl":"https://doi.org/10.1109/SENSOR.2007.4300240","url":null,"abstract":"This paper presents the results of an investigation into the effect of geometrical patterns of the photomask on the dimensions of the trench that evolves after silicon isotropic etching. The study is based on the most complex surface pattern to date, composed of five independent geometric variables. Data from over 180 different patterns was collected to examine the influence of each parameter on the result. Two Langmuir-based models were developed relating the channel depth and width dimensions to the exposed pattern. These new models provide the capability to design complex microfluidic networks using only a single mask with channel dimensions predicted to 5% of their actual value.","PeriodicalId":23295,"journal":{"name":"TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73898765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-06-10DOI: 10.1109/SENSOR.2007.4300209
M. Nishiyama, H. Konishi, J. Suzuki, Y. Tezuka, Y. Suzuki, K. Suzuki
In this paper, we propose a novel variable capacitor having higher capacitance ratio (C/R) >35 than ever before. So far, various types of RF-MEMS variable capacitors have been proposed, but even the highest C/R among the capacitors under development is now the order of 4. For enabling the multi-band of the wireless terminal, it has been expected to achieve a device having higher C/R. We demonstrate by combining arbitrarily the quantity of the chameleon actuators and the area of capacitor plate, the capacitance value can be digitally controlled in a wide range.
{"title":"Extremely High Capacitance Ratio (C/R) RF MEMS Variable Capacitor with Chameleon Actuators","authors":"M. Nishiyama, H. Konishi, J. Suzuki, Y. Tezuka, Y. Suzuki, K. Suzuki","doi":"10.1109/SENSOR.2007.4300209","DOIUrl":"https://doi.org/10.1109/SENSOR.2007.4300209","url":null,"abstract":"In this paper, we propose a novel variable capacitor having higher capacitance ratio (C/R) >35 than ever before. So far, various types of RF-MEMS variable capacitors have been proposed, but even the highest C/R among the capacitors under development is now the order of 4. For enabling the multi-band of the wireless terminal, it has been expected to achieve a device having higher C/R. We demonstrate by combining arbitrarily the quantity of the chameleon actuators and the area of capacitor plate, the capacitance value can be digitally controlled in a wide range.","PeriodicalId":23295,"journal":{"name":"TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79084641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-06-10DOI: 10.1109/SENSOR.2007.4300095
S. Lee, H. Uchida, S. Soda, T. Nishino, H. Inoue, S. Izuo, Y. Yoshida, M. Miyazaki
In this paper, we present an RFMEMS switched capacitor array, which is proposed as a RF component to achieve various kinds of tunable RF filters. Our RFMEMS switched capacitor array consists of RFMEMS direct contact switches and metal-insulator-metal capacitors. In order to obtain reliable capacitors, the metal sacrificial layer for the RFMEMS switch fabrication is also applied to the capacitor implementation. We have achieved a C- to Ku-band tunable band pass filter by using the RFMEMS switched capacitor array. The capacitance of capacitor is designed corresponding to each tuning state of the band pass filter, which is selected by the RFMEMS switch operation. The insertion losses of the band pass filter were 7.1dB, 4.9 dB and 6.2 dB at 8 GHz, 12 GHz and 16 GHz, respectively.
{"title":"An Rfmems Switched Capacitor Array for a Tunable Band Pass Filter","authors":"S. Lee, H. Uchida, S. Soda, T. Nishino, H. Inoue, S. Izuo, Y. Yoshida, M. Miyazaki","doi":"10.1109/SENSOR.2007.4300095","DOIUrl":"https://doi.org/10.1109/SENSOR.2007.4300095","url":null,"abstract":"In this paper, we present an RFMEMS switched capacitor array, which is proposed as a RF component to achieve various kinds of tunable RF filters. Our RFMEMS switched capacitor array consists of RFMEMS direct contact switches and metal-insulator-metal capacitors. In order to obtain reliable capacitors, the metal sacrificial layer for the RFMEMS switch fabrication is also applied to the capacitor implementation. We have achieved a C- to Ku-band tunable band pass filter by using the RFMEMS switched capacitor array. The capacitance of capacitor is designed corresponding to each tuning state of the band pass filter, which is selected by the RFMEMS switch operation. The insertion losses of the band pass filter were 7.1dB, 4.9 dB and 6.2 dB at 8 GHz, 12 GHz and 16 GHz, respectively.","PeriodicalId":23295,"journal":{"name":"TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85359104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-06-10DOI: 10.1109/SENSOR.2007.4300313
W. Xue, T. Cui
We report the fabrication of single-walled carbon nanotube (SWNT) thin-film transistors on plastic substrates with layer-by-layer self-assembly. The resistance of the SWNT thin film decreases when the number of assembled SWNT layers increases. Increasing the substrate bending angle greatly decreases the resistance of the SWNT thin film. The resistance changes of thin films containing 14 and 16 SWNT layers are measured as 38.2% and 47.1%, which are more than 10 times higher than silicon. The observed "piezoresistive" phenomenon of the assembled SWNT thin films creates opportunities for highly sensitive sensors and electronic devices in many areas.
{"title":"Electrical and Electromechanical Characteristics of Nanoassembled Carbon Nanotube Thin Film Resistors on Flexible Substrates","authors":"W. Xue, T. Cui","doi":"10.1109/SENSOR.2007.4300313","DOIUrl":"https://doi.org/10.1109/SENSOR.2007.4300313","url":null,"abstract":"We report the fabrication of single-walled carbon nanotube (SWNT) thin-film transistors on plastic substrates with layer-by-layer self-assembly. The resistance of the SWNT thin film decreases when the number of assembled SWNT layers increases. Increasing the substrate bending angle greatly decreases the resistance of the SWNT thin film. The resistance changes of thin films containing 14 and 16 SWNT layers are measured as 38.2% and 47.1%, which are more than 10 times higher than silicon. The observed \"piezoresistive\" phenomenon of the assembled SWNT thin films creates opportunities for highly sensitive sensors and electronic devices in many areas.","PeriodicalId":23295,"journal":{"name":"TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85439107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-06-10DOI: 10.1109/SENSOR.2007.4300075
M. Puech, J. Thevenoud, J. Gruffat, N. Launay, P. Godinat, O. Le Barillec
This paper presents the evolution of the DRIE of silicon over the last decade. Starting with the initial MEMS product requirements, the DRIE demonstrated its potential to improve the delivered performances in line with the evolution of the Microsystems requirements. In less than a decade, the DRIE etching rate and aspect ratio have been multiplied by an impressive factor of 10. This outstanding capabilities favored its adoption in new microelectronic applications which lead to a step forward in the development of an extended range of tools and processes. As a result, the Microsystems will benefit from those latest developments.
{"title":"Achievements and Perspectives of the Drie Technology for the Microsystems Market","authors":"M. Puech, J. Thevenoud, J. Gruffat, N. Launay, P. Godinat, O. Le Barillec","doi":"10.1109/SENSOR.2007.4300075","DOIUrl":"https://doi.org/10.1109/SENSOR.2007.4300075","url":null,"abstract":"This paper presents the evolution of the DRIE of silicon over the last decade. Starting with the initial MEMS product requirements, the DRIE demonstrated its potential to improve the delivered performances in line with the evolution of the Microsystems requirements. In less than a decade, the DRIE etching rate and aspect ratio have been multiplied by an impressive factor of 10. This outstanding capabilities favored its adoption in new microelectronic applications which lead to a step forward in the development of an extended range of tools and processes. As a result, the Microsystems will benefit from those latest developments.","PeriodicalId":23295,"journal":{"name":"TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81920610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-06-10DOI: 10.1109/SENSOR.2007.4300537
D. Turgis, R. Puers
This papers reports a solution for a low power, high data rate telemetry, intended to be used in capsule endoscopy. The system is taking advantage of the small absorption of radio waves of low frequencies, around 120 MHz, to allow a telemetry up to a million bit per second of raw data, while keeping the power consumption to 6 mW. The system does not need the design of a dedicated ASIC and therefore reduces the costs of prototyping. The dimensions of the transmitter can be kept small enough to be implantable, and an implementation on a flexible substrate has been performed.
{"title":"A Low Power Radio Telemetry Achieving Very High Data Rates at Biocompatible Frequencies","authors":"D. Turgis, R. Puers","doi":"10.1109/SENSOR.2007.4300537","DOIUrl":"https://doi.org/10.1109/SENSOR.2007.4300537","url":null,"abstract":"This papers reports a solution for a low power, high data rate telemetry, intended to be used in capsule endoscopy. The system is taking advantage of the small absorption of radio waves of low frequencies, around 120 MHz, to allow a telemetry up to a million bit per second of raw data, while keeping the power consumption to 6 mW. The system does not need the design of a dedicated ASIC and therefore reduces the costs of prototyping. The dimensions of the transmitter can be kept small enough to be implantable, and an implementation on a flexible substrate has been performed.","PeriodicalId":23295,"journal":{"name":"TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81929592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-06-10DOI: 10.1109/SENSOR.2007.4300130
Sheng-Shian Li, Yu-Wei Lin, Z. Ren, C. Nguyen
A medium-scale integrated (MSI) vibrating micromechanical filter circuit that utilizes 128 radial-mode disk and mechanical link elements to achieve low motional resistance while suppressing unwanted modes and feedthrough signals has been demonstrated with a 0.06%-bandwidth insertion loss less than 2.5 dB at 163 MHz. The ability to attain an insertion loss this small for such a tiny percent bandwidth on chip is unprecedented and is made possible here by the availability of Q's >10,000 provided by capacitively transduced resonators. In particular, the MSI mechanical circuit is able to harness the high Q of capacitively transduced resonators while overcoming their impedance deficiencies via strategic mechanical circuit design methodologies, such as the novel use of wavelength-optimized resonator coupling to effect a differential mode of operation that substantially improves the stopband rejection of the filter response while also suppressing unwanted modes.
{"title":"An MSI Micromechanical Differential Disk-Array Filter","authors":"Sheng-Shian Li, Yu-Wei Lin, Z. Ren, C. Nguyen","doi":"10.1109/SENSOR.2007.4300130","DOIUrl":"https://doi.org/10.1109/SENSOR.2007.4300130","url":null,"abstract":"A medium-scale integrated (MSI) vibrating micromechanical filter circuit that utilizes 128 radial-mode disk and mechanical link elements to achieve low motional resistance while suppressing unwanted modes and feedthrough signals has been demonstrated with a 0.06%-bandwidth insertion loss less than 2.5 dB at 163 MHz. The ability to attain an insertion loss this small for such a tiny percent bandwidth on chip is unprecedented and is made possible here by the availability of Q's >10,000 provided by capacitively transduced resonators. In particular, the MSI mechanical circuit is able to harness the high Q of capacitively transduced resonators while overcoming their impedance deficiencies via strategic mechanical circuit design methodologies, such as the novel use of wavelength-optimized resonator coupling to effect a differential mode of operation that substantially improves the stopband rejection of the filter response while also suppressing unwanted modes.","PeriodicalId":23295,"journal":{"name":"TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79756016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-06-10DOI: 10.1109/SENSOR.2007.4300178
Jingwei Liu, G. Fedder
This paper describes a convenient and inexpensive electrical test structure to characterize silicon undercut in a CMOS-MEMS process, which helps to define the context-dependent MEMS design rules. Undercut extracted from electrical measurements match physical undercut measured from focused- ion beam etched cross sections and optical observations. Silicon undercut increases with silicon isotropic etch time and opening size, and it varies slightly with structural height. An exponential equation is employed to model the relation between undercut and opening size. Based on the characterization results, MEMS design rules are extracted.
{"title":"Silicon Undercut Characterization in a CMOS-MEMS Process","authors":"Jingwei Liu, G. Fedder","doi":"10.1109/SENSOR.2007.4300178","DOIUrl":"https://doi.org/10.1109/SENSOR.2007.4300178","url":null,"abstract":"This paper describes a convenient and inexpensive electrical test structure to characterize silicon undercut in a CMOS-MEMS process, which helps to define the context-dependent MEMS design rules. Undercut extracted from electrical measurements match physical undercut measured from focused- ion beam etched cross sections and optical observations. Silicon undercut increases with silicon isotropic etch time and opening size, and it varies slightly with structural height. An exponential equation is employed to model the relation between undercut and opening size. Based on the characterization results, MEMS design rules are extracted.","PeriodicalId":23295,"journal":{"name":"TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79790152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-06-10DOI: 10.1109/SENSOR.2007.4300380
T. Dohi, K. Kuwana, K. Matsumoto, I. Shimoyama
This paper reports on a standing micro coil as a receiver for a high resolution MRI (Magnetic Resonance Imaging). A standing micro coil was fabricated by post release folding process. Our coil standing in free space had uniform sensitive area and high sensitivity. We demonstrated that a 12×12×1000 ¿m3 resolution image of pine needles was taken by using the standing micro coil.
{"title":"A Standing Micro Coil for a High Resolution MRI","authors":"T. Dohi, K. Kuwana, K. Matsumoto, I. Shimoyama","doi":"10.1109/SENSOR.2007.4300380","DOIUrl":"https://doi.org/10.1109/SENSOR.2007.4300380","url":null,"abstract":"This paper reports on a standing micro coil as a receiver for a high resolution MRI (Magnetic Resonance Imaging). A standing micro coil was fabricated by post release folding process. Our coil standing in free space had uniform sensitive area and high sensitivity. We demonstrated that a 12×12×1000 ¿m3 resolution image of pine needles was taken by using the standing micro coil.","PeriodicalId":23295,"journal":{"name":"TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79801880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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