首页 > 最新文献

International Test Conference, 2003. Proceedings. ITC 2003.最新文献

英文 中文
A new approach for low-power scan testing 一种低功耗扫描测试新方法
Pub Date : 2003-09-30 DOI: 10.1109/TEST.2003.1270873
T. Yoshida, M. Watari
As semiconductor manufacturing technology advances, power dissipation and noise in scan testing has become a critical problem. In our studies on practical LSI manufacturing, we have found that power supply voltage drops cause testing problems during shift operations in scan testing and we have analyzed this phenomenon and its causes. In this paper, we present a new testing method named MD-SCAN (Multi Duty-Scan) which solves power supply voltage drop problems in scan testing, as well as offering an eficient method of appkcation.
随着半导体制造技术的进步,扫描测试中的功耗和噪声问题已经成为一个关键问题。在实际的大规模集成电路制造研究中,我们发现在扫描测试中移位操作时,电源电压下降会导致测试问题,并分析了这一现象及其原因。本文提出了一种新的测试方法MD-SCAN (Multi duty scan),解决了扫描测试中的电源压降问题,并提供了一种有效的应用方法。
{"title":"A new approach for low-power scan testing","authors":"T. Yoshida, M. Watari","doi":"10.1109/TEST.2003.1270873","DOIUrl":"https://doi.org/10.1109/TEST.2003.1270873","url":null,"abstract":"As semiconductor manufacturing technology advances, power dissipation and noise in scan testing has become a critical problem. In our studies on practical LSI manufacturing, we have found that power supply voltage drops cause testing problems during shift operations in scan testing and we have analyzed this phenomenon and its causes. In this paper, we present a new testing method named MD-SCAN (Multi Duty-Scan) which solves power supply voltage drop problems in scan testing, as well as offering an eficient method of appkcation.","PeriodicalId":236182,"journal":{"name":"International Test Conference, 2003. Proceedings. ITC 2003.","volume":"136 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120940887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 58
Future challenges for mems failure analysis mems失效分析的未来挑战
Pub Date : 2003-09-30 DOI: 10.1109/TEST.2003.1271070
J. Walraven
Abstract MEMS processes and components are rapidly changing in device design, processing, and, most importantly, application. This paper will discuss the future challenges faced by the MEMS failure analysis as the field of MEMS (fabrication, component design, and applications) grows. Specific areas of concern for the failure analyst will also be discussed. 1. Introduction MEMS research is a relatively young field compared to ICs. MEMS design, fabrication, packaging, and reliability testing are still in their infancy and require constant revision and improvements now and over the next several years. MEMS failure analyisis (in this context) is a younger field than MEMS fabrication and design. Although MEMS have been around for a number of years, with failure analysis support for production, packaging, testing, and field operation, the tools and techniques required to properly diagnose the root cause of failure need to be upgraded and designed specifically for MEMS failure mechanisms. MEMS failure mechanisms can be as unique as the devices themselves. In ICs, considerable efforts are taken in handling and testing to properly characterize and assess device performance and compare the performance to device specifications. One major difference between ICs and MEMS testing is the environmental conditions. In many instances, ICs are tested in various environments ranging from various temperature and humidity conditions to vacuum and inert gas. In MEMS technology, similar handling and testing procedures are implemented, but the device is required to work with a given environment [1]. Varying the test environment can dramatically change device sensitivity and functionality. The added complexity of mechanical motion requires added care in handling and testing. Fortunately, MEMS has the advantage of leveraging IC FA tools and techniques for MEMS analysis. However, as the number of devices and applications grow, the MEMS failure analyst must become more diverse and multi-disciplinary in their knowledge base to properly diagnose the root cause of failure. This has become clearly evident in the failure analysis of thermally versus electrostatically driven actuators, microbiological and microfluidic devices, optical and RF components, and the wide array of sensors available for use.
MEMS工艺和元件在器件设计、加工和最重要的应用方面正在迅速变化。本文将讨论随着MEMS领域(制造、元件设计和应用)的发展,MEMS失效分析面临的未来挑战。还将讨论故障分析人员所关注的特定领域。1. 与集成电路相比,MEMS研究是一个相对年轻的领域。MEMS设计、制造、封装和可靠性测试仍处于起步阶段,现在和未来几年需要不断修订和改进。MEMS失效分析(在这种情况下)是一个比MEMS制造和设计更年轻的领域。虽然MEMS已经存在了很多年,但是对于生产、封装、测试和现场操作的故障分析支持,正确诊断故障根本原因所需的工具和技术需要升级,并专门针对MEMS故障机制进行设计。MEMS失效机制可能与器件本身一样独特。在集成电路中,为了正确地描述和评估设备性能,并将性能与设备规格进行比较,需要在处理和测试方面付出相当大的努力。ic和MEMS测试的一个主要区别是环境条件。在许多情况下,集成电路在各种环境中进行测试,从各种温度和湿度条件到真空和惰性气体。在MEMS技术中,实现了类似的处理和测试程序,但设备需要在给定的环境中工作[1]。改变测试环境会极大地改变设备的灵敏度和功能。机械运动增加的复杂性要求在处理和测试时更加小心。幸运的是,MEMS具有利用IC FA工具和技术进行MEMS分析的优势。然而,随着器件和应用数量的增长,MEMS故障分析师必须在其知识库中变得更加多样化和多学科,以正确诊断故障的根本原因。这在热与静电驱动致动器、微生物和微流体装置、光学和射频元件以及各种可用传感器的失效分析中已经变得非常明显。
{"title":"Future challenges for mems failure analysis","authors":"J. Walraven","doi":"10.1109/TEST.2003.1271070","DOIUrl":"https://doi.org/10.1109/TEST.2003.1271070","url":null,"abstract":"Abstract MEMS processes and components are rapidly changing in device design, processing, and, most importantly, application. This paper will discuss the future challenges faced by the MEMS failure analysis as the field of MEMS (fabrication, component design, and applications) grows. Specific areas of concern for the failure analyst will also be discussed. 1. Introduction MEMS research is a relatively young field compared to ICs. MEMS design, fabrication, packaging, and reliability testing are still in their infancy and require constant revision and improvements now and over the next several years. MEMS failure analyisis (in this context) is a younger field than MEMS fabrication and design. Although MEMS have been around for a number of years, with failure analysis support for production, packaging, testing, and field operation, the tools and techniques required to properly diagnose the root cause of failure need to be upgraded and designed specifically for MEMS failure mechanisms. MEMS failure mechanisms can be as unique as the devices themselves. In ICs, considerable efforts are taken in handling and testing to properly characterize and assess device performance and compare the performance to device specifications. One major difference between ICs and MEMS testing is the environmental conditions. In many instances, ICs are tested in various environments ranging from various temperature and humidity conditions to vacuum and inert gas. In MEMS technology, similar handling and testing procedures are implemented, but the device is required to work with a given environment [1]. Varying the test environment can dramatically change device sensitivity and functionality. The added complexity of mechanical motion requires added care in handling and testing. Fortunately, MEMS has the advantage of leveraging IC FA tools and techniques for MEMS analysis. However, as the number of devices and applications grow, the MEMS failure analyst must become more diverse and multi-disciplinary in their knowledge base to properly diagnose the root cause of failure. This has become clearly evident in the failure analysis of thermally versus electrostatically driven actuators, microbiological and microfluidic devices, optical and RF components, and the wide array of sensors available for use.","PeriodicalId":236182,"journal":{"name":"International Test Conference, 2003. Proceedings. ITC 2003.","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126931175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 28
Application and demonstration of a digital test core: optoelectronic test bed and wafer-level prober 数字测试核心:光电测试平台和晶圆级探头的应用与演示
Pub Date : 2003-09-30 DOI: 10.1109/TEST.2003.1270837
John S. Davis, D. Keezer, O. Liboiron-Ladouceur, K. Bergman
Abstract A multi-purpose digital test core utilizing programmable logic has been introduced [1,2] to implement many of the functions of traditional automated test equipment (ATE). While previous papers have described the theory, this paper quantifies the results and presents additional applications with improved methods operating up to 4.4Gpbs. The digital test core provides a substantial number of programmable I/O for testing circuits and systems. It may be used either to enhance the capabilities of ATE or to provide autonomous testing within large systems or arrays of components. This technique has been expanded upon to produce greater functionality at higher frequencies. Based upon limitations of current ATE and BIST, the need for the digital test core is described. The test core concept is reviewed within an opto-electronic pattern generator and sampler with an eventual goal of terabit-per-second aggregate data rate. The performance of the device is discussed, and a second application of the digital test core is introduced as a nano-scale wafer-level embedded tester.
一种利用可编程逻辑的多用途数字测试核心已经被引入[1,2],以实现传统自动化测试设备(ATE)的许多功能。虽然以前的论文已经描述了该理论,但本文量化了结果,并提出了改进方法的其他应用,操作高达4.4 gbbs。数字测试核心为测试电路和系统提供了大量可编程I/O。它既可以用于增强ATE的能力,也可以用于在大型系统或组件阵列中提供自主测试。这项技术已经扩展到在更高的频率上产生更大的功能。基于当前ATE和BIST的局限性,描述了对数字测试芯的需求。测试核心概念在光电模式发生器和采样器中进行了审查,最终目标是每秒太比特的聚合数据速率。讨论了该器件的性能,并介绍了该数字测试芯作为纳米级晶圆级嵌入式测试仪的第二种应用。
{"title":"Application and demonstration of a digital test core: optoelectronic test bed and wafer-level prober","authors":"John S. Davis, D. Keezer, O. Liboiron-Ladouceur, K. Bergman","doi":"10.1109/TEST.2003.1270837","DOIUrl":"https://doi.org/10.1109/TEST.2003.1270837","url":null,"abstract":"Abstract A multi-purpose digital test core utilizing programmable logic has been introduced [1,2] to implement many of the functions of traditional automated test equipment (ATE). While previous papers have described the theory, this paper quantifies the results and presents additional applications with improved methods operating up to 4.4Gpbs. The digital test core provides a substantial number of programmable I/O for testing circuits and systems. It may be used either to enhance the capabilities of ATE or to provide autonomous testing within large systems or arrays of components. This technique has been expanded upon to produce greater functionality at higher frequencies. Based upon limitations of current ATE and BIST, the need for the digital test core is described. The test core concept is reviewed within an opto-electronic pattern generator and sampler with an eventual goal of terabit-per-second aggregate data rate. The performance of the device is discussed, and a second application of the digital test core is introduced as a nano-scale wafer-level embedded tester.","PeriodicalId":236182,"journal":{"name":"International Test Conference, 2003. Proceedings. ITC 2003.","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126773042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Efficient sequential atpg based on partitioned finite-state-machine traversal 基于分区有限状态机遍历的高效顺序atpg
Pub Date : 2003-09-30 DOI: 10.1109/TEST.2003.1270850
Qingwei Wu, M. Hsiao
We present a new automatic test pattern generation algorithm for sequential circuits by traversing the partitioned state spaces. The new features include: (1) nondisjoint state groups are obtained such that two different state groups may have common flip-flops, (2) partial state transition graphs (STGs) are constructed at run time for each state group, (3) spectral information for state variables are extracted and the spectral information of the state variables helps to identify the behavior of the flip-flops in the frequency domain. This information will help us to intelligently partition the state space. We focus only on the STGs for the flip-flops that are grouped together instead of building the STG for the entire circuit, and the ATPG tries to traverse all states and transitions within each partial STG. By exercising states visited and arcs traversed, the vectors generated often lead to the detection of hard faults. Since we limit a maximum size any state group can be, construction of partitioned STGs is feasible even for very large sequential circuits. Only logic simulation is needed in our ATPG; as a result, the execution time is greatly reduced while achieving high fault coverages compared with other test generators. For some large sequential circuits, highest fault coverages have been achieved.
通过遍历划分的状态空间,提出了一种新的顺序电路测试模式自动生成算法。新的特征包括:(1)得到了不相交的状态群,使得两个不同的状态群可能有共同的触发器;(2)在运行时为每个状态组构建了部分状态转移图(STGs);(3)提取了状态变量的频谱信息,状态变量的频谱信息有助于识别触发器在频域的行为。这些信息将帮助我们智能地划分状态空间。我们只关注组合在一起的触发器的STG,而不是为整个电路构建STG,并且ATPG试图遍历每个部分STG中的所有状态和转换。通过计算访问的状态和遍历的弧线,生成的向量通常会导致硬故障的检测。由于我们限制了任何状态群的最大大小,因此即使对于非常大的顺序电路,分区stg的构造也是可行的。我们的ATPG只需要逻辑仿真;因此,与其他测试生成器相比,在实现高故障覆盖率的同时,大大减少了执行时间。对于一些大型顺序电路,已经实现了最高的故障覆盖率。
{"title":"Efficient sequential atpg based on partitioned finite-state-machine traversal","authors":"Qingwei Wu, M. Hsiao","doi":"10.1109/TEST.2003.1270850","DOIUrl":"https://doi.org/10.1109/TEST.2003.1270850","url":null,"abstract":"We present a new automatic test pattern generation algorithm for sequential circuits by traversing the partitioned state spaces. The new features include: (1) nondisjoint state groups are obtained such that two different state groups may have common flip-flops, (2) partial state transition graphs (STGs) are constructed at run time for each state group, (3) spectral information for state variables are extracted and the spectral information of the state variables helps to identify the behavior of the flip-flops in the frequency domain. This information will help us to intelligently partition the state space. We focus only on the STGs for the flip-flops that are grouped together instead of building the STG for the entire circuit, and the ATPG tries to traverse all states and transitions within each partial STG. By exercising states visited and arcs traversed, the vectors generated often lead to the detection of hard faults. Since we limit a maximum size any state group can be, construction of partitioned STGs is feasible even for very large sequential circuits. Only logic simulation is needed in our ATPG; as a result, the execution time is greatly reduced while achieving high fault coverages compared with other test generators. For some large sequential circuits, highest fault coverages have been achieved.","PeriodicalId":236182,"journal":{"name":"International Test Conference, 2003. Proceedings. ITC 2003.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130363757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Optical and electrical testing of latchup in I/O interface circuits I/O接口电路中锁存器的光电测试
Pub Date : 2003-09-30 DOI: 10.1109/TEST.2003.1270845
F. Stellari, P. Song, M. McManus, R. Gauthier, A. Weger, K. Chatty, M. Muhammad, P. Sanda
Backside light emission and electrical measurements were used to evaluate the susceptibility to latchup of externally cabled I/O pins for a 0.13 µm technology generation [1,2] test chip, which was designed in a flip-chip package. Case studies of several Inputs/Outputs (I/Os) are shown along with conclusions regarding layout and floorplanning to ensure the robustness to various types of latchup trigger events.
对于采用倒装封装设计的0.13µm技术一代[1,2]测试芯片,采用背面光发射和电气测量来评估外部电缆I/O引脚对锁存的敏感性。几个输入/输出(I/ o)的案例研究,以及关于布局和地板规划的结论,以确保对各种类型的锁止触发事件的稳健性。
{"title":"Optical and electrical testing of latchup in I/O interface circuits","authors":"F. Stellari, P. Song, M. McManus, R. Gauthier, A. Weger, K. Chatty, M. Muhammad, P. Sanda","doi":"10.1109/TEST.2003.1270845","DOIUrl":"https://doi.org/10.1109/TEST.2003.1270845","url":null,"abstract":"Backside light emission and electrical measurements were used to evaluate the susceptibility to latchup of externally cabled I/O pins for a 0.13 µm technology generation [1,2] test chip, which was designed in a flip-chip package. Case studies of several Inputs/Outputs (I/Os) are shown along with conclusions regarding layout and floorplanning to ensure the robustness to various types of latchup trigger events.","PeriodicalId":236182,"journal":{"name":"International Test Conference, 2003. Proceedings. ITC 2003.","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134532506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Screening vdsm outliers using nominal and subthreshold supply voltage I/sub DDQ/ 使用标称和亚阈值供电电压I/sub DDQ/筛选vdsm异常值
Pub Date : 2003-09-30 DOI: 10.1109/TEST.2003.1270883
C. Schuermyer, B. Benware, Kevin Cota, R. Madge, W. R. Daasch, L. Ning
Very Deep Sub-Micron (VDSM) defects are resolved as Statistical Post-Processing™ (SPP) outliers of a new IDDQ screen. The screen applies an IDDQ pattern once to the Device Under Test (DUT) and takes two quiescent current measurements. The quiescent current measurements are taken at nominal and at subthreshold supply voltages. The scr een is demonstrated with 0.18µm and 0.13µm volume data. The screen's effectiveness is compared to stuck -at and other IDDQ screens.
极深亚微米(VDSM)缺陷被解决为新的IDDQ屏幕的统计后处理™(SPP)异常值。屏幕对被测设备(DUT)应用一次IDDQ模式,并进行两次静态电流测量。静态电流测量在标称电压和亚阈值电压下进行。该屏幕显示了0.18µm和0.13µm的体积数据。该屏幕的有效性与卡在和其他IDDQ屏幕进行了比较。
{"title":"Screening vdsm outliers using nominal and subthreshold supply voltage I/sub DDQ/","authors":"C. Schuermyer, B. Benware, Kevin Cota, R. Madge, W. R. Daasch, L. Ning","doi":"10.1109/TEST.2003.1270883","DOIUrl":"https://doi.org/10.1109/TEST.2003.1270883","url":null,"abstract":"Very Deep Sub-Micron (VDSM) defects are resolved as Statistical Post-Processing™ (SPP) outliers of a new IDDQ screen. The screen applies an IDDQ pattern once to the Device Under Test (DUT) and takes two quiescent current measurements. The quiescent current measurements are taken at nominal and at subthreshold supply voltages. The scr een is demonstrated with 0.18µm and 0.13µm volume data. The screen's effectiveness is compared to stuck -at and other IDDQ screens.","PeriodicalId":236182,"journal":{"name":"International Test Conference, 2003. Proceedings. ITC 2003.","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133297105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Reliability threats in VDSM - shortcomings in conventional test and fault tolerance alternatives VDSM中的可靠性威胁——传统测试和容错替代方案的不足
Pub Date : 2003-09-30 DOI: 10.1109/TEST.2003.1271122
M. Nicolaidis
IC technologies are approaching the ultimate limits of silicon in terms of device size, power supply levels and speed. By approaching these limits, they become increasingly sensitive to noise which result on unacceptable rates of soft-errors. Furthermore, defect behavior becomes increasingly complex, resulting on increasing numbers of timing and other spurious faults that can escape detection during fabrication testing. This makes increasingly difficult to achieve acceptable reliability levels for future ICs and maintain acceptable cost and quality for IC testing. One important reliability threat is related to single event transients (SET) and single-event upsets (SEU). An SEU is the consequence of a transient current pulse (single event transient), created when a particle strikes a sensitive node of an integrated circuit. When an SET occurring on a memory cell node flips the state of the cell it is transformed to an SEU. Similarly, when an SET occurring on a node of a logic network is propagated through the gates of the network and is captured by a latch as a logic error, it is transformed to an SEU. Atmospheric neutrons affect the operation of modern ICs even at ground level. A few years ago, the energy of the secondary particles produced by the nuclear reaction of neutrons with the matter of an IC was insufficient to affect its operation. However, as we approached 0.1um and use very low supply voltages, the rates of errors induced by cosmic neutrons became unacceptable. Furthermore, alpha particles produced by the disintegration of unstable isotopes of an IC material and its packaging, are another cause of increasing soft error rates. In addition in today technologies, soft errors concern not only memories (which was the case so far) but also logic. One basic reason for the increased sensitivity of logic parts is the reduction of the device size and the Vdd level. Since both the Vdd level and the circuit nodes capacitance Cnode are reduced, the charge stored on a node (Q = Vdd * Cnode) is reduced drastically. Consequently, a significantly lower charge deposed by a particle strike suffices to flip the logic value of a node creating a transient pulse (single event transient or SET), or to flip the state of a storage cell (single event upset). In the past, the probability of occurrence of a soft error in logic parts was drastically lower than in memories, due to the following reasons: (i) the propagation through logic gates can filter the induced transient pulse, and (ii) a transient pulse propagated through a logic network will result in a logic error only if it reaches the input of a latch simultaneously with the latching edge of the clock. For these reasons, traditionally, only memories have been protected against SEUs, even in a radiation hostile environment like space. Unfortunately, deeper submicron scaling increases drastically the sensitivity of logic networks too. In fact, a transient pulse wider than the logic transition time of a gate
在器件尺寸、电源水平和速度方面,集成电路技术正在接近硅的极限。由于接近这些极限,它们对噪声变得越来越敏感,从而导致不可接受的软错误率。此外,缺陷行为变得越来越复杂,导致在制造测试中可以逃避检测的时序和其他虚假故障的数量增加。这使得为未来的集成电路实现可接受的可靠性水平以及为集成电路测试保持可接受的成本和质量变得越来越困难。一个重要的可靠性威胁与单事件暂态(SET)和单事件异常(SEU)有关。SEU是瞬态电流脉冲(单事件瞬态)的结果,当粒子撞击集成电路的敏感节点时产生。当发生在存储单元节点上的SET翻转单元的状态时,它被转换为一个SEU。类似地,当逻辑网络节点上发生的SET通过网络的门传播并被锁存器捕获为逻辑错误时,它将被转换为SEU。大气中子影响现代集成电路的运行,甚至在地面水平。几年前,中子与集成电路物质核反应产生的二次粒子的能量不足以影响其运行。然而,当我们接近0.1um并使用非常低的电源电压时,宇宙中子引起的错误率变得不可接受。此外,由集成电路材料及其封装的不稳定同位素衰变产生的α粒子是导致软错误率增加的另一个原因。此外,在今天的技术中,软错误不仅涉及内存(到目前为止就是这种情况),还涉及逻辑。逻辑器件灵敏度增加的一个基本原因是器件尺寸和Vdd水平的减小。由于Vdd水平和电路节点电容Cnode都降低了,存储在节点(Q = Vdd * Cnode)上的电荷急剧减少。因此,由粒子撞击沉积的明显较低的电荷足以翻转节点的逻辑值,从而产生瞬态脉冲(单事件瞬态或SET),或翻转存储单元的状态(单事件扰动)。过去,在逻辑部分发生软错误的概率比在存储器中要低得多,其原因是:(i)通过逻辑门的传播可以过滤感应的瞬态脉冲,(ii)通过逻辑网络传播的瞬态脉冲只有在与时钟的锁存边缘同时到达锁存器的输入时才会导致逻辑错误。由于这些原因,传统上,即使在像太空这样的辐射恶劣环境中,也只有记忆被保护起来不受seu的伤害。不幸的是,更深的亚微米尺度也会大大增加逻辑网络的灵敏度。事实上,一个比门的逻辑跃迁时间宽的瞬态脉冲通过门传播而没有衰减。由粒子撞击引起的瞬态脉冲的宽度为几百皮秒(确切的数值取决于电路特性和粒子的能量)。由于VDSM中逻辑门的跃迁时间变得非常短,即使对于能量相对较低的粒子,瞬态脉冲也无法衰减。此外,随着时钟频率的显著增加,暂态脉冲锁存的概率也会增加。实际上,时钟的锁存边越频繁,与锁存边相吻合的瞬态脉冲的概率就越高。由于这些趋势,逻辑部分的错误率变得显著。set和seu不是由于物理缺陷造成的。该电路在大多数情况下都能完美工作,但在随机情况下会产生错误。因此,我们不能使用制造(一次性)测试来应对。另一个问题是,定时故障越来越受到VDSM技术的重视。工艺参数的变化和各种缺陷类型(短路、开路……)经常影响电路速度。它们增加了信号延迟并导致时序错误。由于现代集成电路中有大量的路径,它们可能需要复杂的测试条件才能检测到。此外,其中一些故障只有在与其他定时关键条件(例如串扰、地面反弹等)一起激活时才会被检测到。这使得针对此类故障的ATPG在计算上不可行,且测试长度不现实。越来越多带有时序故障的电路将不可避免地通过制造测试。在这种情况下,针对软错误和时序错误的容错IC设计成为各种应用领域的必要条件。这些领域中有许多无法承受高成本的容错方案,比如TMR。因此,需要替代解决方案。幸运的是,EDAC代码可以以可接受的成本保护内存。 在逻辑上,情况更为复杂。然而,由于目标故障的临时性质,基于时间冗余的并发错误检测以及硬件重试机制可以实现经济有效的逻辑保护。这些方法在不久的将来将变得越来越重要。根据ITRS路线图,1999年版,设计,第43页):在“系统设计中的困难挑战(<100nm, 2005年以后)”中,人们可以发现:“随着系统变得太大而无法在制造出口进行功能测试,自动将鲁棒性插入设计的能力将成为优先考虑的问题。需要自动引入诸如冗余逻辑之类的容错技术”。
{"title":"Reliability threats in VDSM - shortcomings in conventional test and fault tolerance alternatives","authors":"M. Nicolaidis","doi":"10.1109/TEST.2003.1271122","DOIUrl":"https://doi.org/10.1109/TEST.2003.1271122","url":null,"abstract":"IC technologies are approaching the ultimate limits of silicon in terms of device size, power supply levels and speed. By approaching these limits, they become increasingly sensitive to noise which result on unacceptable rates of soft-errors. Furthermore, defect behavior becomes increasingly complex, resulting on increasing numbers of timing and other spurious faults that can escape detection during fabrication testing. This makes increasingly difficult to achieve acceptable reliability levels for future ICs and maintain acceptable cost and quality for IC testing. One important reliability threat is related to single event transients (SET) and single-event upsets (SEU). An SEU is the consequence of a transient current pulse (single event transient), created when a particle strikes a sensitive node of an integrated circuit. When an SET occurring on a memory cell node flips the state of the cell it is transformed to an SEU. Similarly, when an SET occurring on a node of a logic network is propagated through the gates of the network and is captured by a latch as a logic error, it is transformed to an SEU. Atmospheric neutrons affect the operation of modern ICs even at ground level. A few years ago, the energy of the secondary particles produced by the nuclear reaction of neutrons with the matter of an IC was insufficient to affect its operation. However, as we approached 0.1um and use very low supply voltages, the rates of errors induced by cosmic neutrons became unacceptable. Furthermore, alpha particles produced by the disintegration of unstable isotopes of an IC material and its packaging, are another cause of increasing soft error rates. In addition in today technologies, soft errors concern not only memories (which was the case so far) but also logic. One basic reason for the increased sensitivity of logic parts is the reduction of the device size and the Vdd level. Since both the Vdd level and the circuit nodes capacitance Cnode are reduced, the charge stored on a node (Q = Vdd * Cnode) is reduced drastically. Consequently, a significantly lower charge deposed by a particle strike suffices to flip the logic value of a node creating a transient pulse (single event transient or SET), or to flip the state of a storage cell (single event upset). In the past, the probability of occurrence of a soft error in logic parts was drastically lower than in memories, due to the following reasons: (i) the propagation through logic gates can filter the induced transient pulse, and (ii) a transient pulse propagated through a logic network will result in a logic error only if it reaches the input of a latch simultaneously with the latching edge of the clock. For these reasons, traditionally, only memories have been protected against SEUs, even in a radiation hostile environment like space. Unfortunately, deeper submicron scaling increases drastically the sensitivity of logic networks too. In fact, a transient pulse wider than the logic transition time of a gate ","PeriodicalId":236182,"journal":{"name":"International Test Conference, 2003. Proceedings. ITC 2003.","volume":"11 3‐4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113973800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bist for deep submicron asic memories with high performance application 专为具有高性能应用的深亚微米基本存储器而设计
Pub Date : 2003-09-30 DOI: 10.1109/TEST.2003.1270862
T. Powell, Wu-Tung Cheng, Joseph Rayhawk, Omer Samman, Paul Policke, S. Lai
Today’s ASIC designs consist of more memory in terms of both area and number of instances. The shrinking of geometries has an even greater effect upon memories due to their tight layouts. These two trends are putting much greater demands upon memory BIST requirements. At-speed testing and custom test algorithms are becoming essential for insuring overall product quality. At-speed testing on memories that now operate in the 10 to 800 MHz range can be a challenge. Another demand upon memory BIST is determining the location of defects so that the cause can be diagnosed, or repaired with redundant cells. A tool and methodology that meets these difficult requirements is discussed.
今天的ASIC设计在面积和实例数量方面都包含更多的内存。几何形状的收缩对记忆的影响更大,因为它们的布局紧凑。这两种趋势对内存BIST要求提出了更高的要求。高速测试和自定义测试算法对于确保整体产品质量变得至关重要。对目前工作在10到800 MHz范围内的存储器进行高速测试可能是一个挑战。对内存BIST的另一个要求是确定缺陷的位置,以便可以诊断原因,或用冗余细胞修复。讨论了满足这些困难需求的工具和方法。
{"title":"Bist for deep submicron asic memories with high performance application","authors":"T. Powell, Wu-Tung Cheng, Joseph Rayhawk, Omer Samman, Paul Policke, S. Lai","doi":"10.1109/TEST.2003.1270862","DOIUrl":"https://doi.org/10.1109/TEST.2003.1270862","url":null,"abstract":"Today’s ASIC designs consist of more memory in terms of both area and number of instances. The shrinking of geometries has an even greater effect upon memories due to their tight layouts. These two trends are putting much greater demands upon memory BIST requirements. At-speed testing and custom test algorithms are becoming essential for insuring overall product quality. At-speed testing on memories that now operate in the 10 to 800 MHz range can be a challenge. Another demand upon memory BIST is determining the location of defects so that the cause can be diagnosed, or repaired with redundant cells. A tool and methodology that meets these difficult requirements is discussed.","PeriodicalId":236182,"journal":{"name":"International Test Conference, 2003. Proceedings. ITC 2003.","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123869238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 29
Hyac: a hybrid structural sat based atpg for crosstalk Hyac:一种基于杂化结构卫星的相声atpg
Pub Date : 2003-09-30 DOI: 10.1109/TEST.2003.1270831
Xiaoliang Bai, S. Dey, Angela Krstic
As technology evolves into the deep sub-micron era, signal integrity problems are growing into a major challenge. An important source of signal integrity problems is the crosstalk noise generated by coupling capacitances between wires. Test vectors that activate and propagate crosstalk noise effects are becoming an essential part of design verification and manufacturing test. However, deriving such vectors is a complex task. In this paper, we propose HyAC, a fast yet accurate hybrid ATPG method targeting multiple-aggressor induced crosstalk errors. Given a victim and a set of aggressors, the proposed ATPG method searches for test vectors to activate and propagate a crosstalk error for the victim. Due to logic constraints, it may not be possible to trigger all aggressors simultaneously. Therefore, firstly we use an implication graph (IG) that consists of logic variables and structural information to check for logic conflicts. If the current set of aggressors is not feasible, our algorithm automatically searches for the next-best subset of aggressors (resulting in the largest noise). After a set of feasible aggressors is identified, we use a modified PODEM [21] algorithm to search for test vectors. This hybrid structural SAT-based ATPG method inherits advantages from both Boolean- satisfiabilitity based methods and structural-based methods to achieve flexibility and efficiency. We demonstrate the accuracy, high quality, and run time efficiency of HyAC through experiments conducted on several benchmark circuits as well as a circuit from a commercial processor.
随着技术进入深亚微米时代,信号完整性问题日益成为一项重大挑战。信号完整性问题的一个重要来源是线间耦合电容产生的串扰噪声。激活和传播串扰噪声效应的测试向量正成为设计验证和制造测试的重要组成部分。然而,导出这样的向量是一项复杂的任务。在本文中,我们提出了一种针对多攻击者引起的串扰误差的快速而精确的混合ATPG方法HyAC。给定一个受害者和一组攻击者,提出的ATPG方法搜索测试向量来激活和传播受害者的串扰错误。由于逻辑限制,可能不可能同时触发所有侵略者。因此,我们首先使用包含逻辑变量和结构信息的隐含图(IG)来检查逻辑冲突。如果当前的攻击者集合不可行,我们的算法会自动搜索攻击者的次优子集(导致最大的噪声)。在识别出一组可行的攻击者后,我们使用改进的PODEM[21]算法来搜索测试向量。这种基于结构sat的混合ATPG方法继承了基于布尔可满足性方法和基于结构的方法的优点,实现了灵活性和高效性。我们通过在几个基准电路以及商用处理器电路上进行的实验证明了HyAC的准确性、高质量和运行时效率。
{"title":"Hyac: a hybrid structural sat based atpg for crosstalk","authors":"Xiaoliang Bai, S. Dey, Angela Krstic","doi":"10.1109/TEST.2003.1270831","DOIUrl":"https://doi.org/10.1109/TEST.2003.1270831","url":null,"abstract":"As technology evolves into the deep sub-micron era, signal integrity problems are growing into a major challenge. An important source of signal integrity problems is the crosstalk noise generated by coupling capacitances between wires. Test vectors that activate and propagate crosstalk noise effects are becoming an essential part of design verification and manufacturing test. However, deriving such vectors is a complex task. In this paper, we propose HyAC, a fast yet accurate hybrid ATPG method targeting multiple-aggressor induced crosstalk errors. Given a victim and a set of aggressors, the proposed ATPG method searches for test vectors to activate and propagate a crosstalk error for the victim. Due to logic constraints, it may not be possible to trigger all aggressors simultaneously. Therefore, firstly we use an implication graph (IG) that consists of logic variables and structural information to check for logic conflicts. If the current set of aggressors is not feasible, our algorithm automatically searches for the next-best subset of aggressors (resulting in the largest noise). After a set of feasible aggressors is identified, we use a modified PODEM [21] algorithm to search for test vectors. This hybrid structural SAT-based ATPG method inherits advantages from both Boolean- satisfiabilitity based methods and structural-based methods to achieve flexibility and efficiency. We demonstrate the accuracy, high quality, and run time efficiency of HyAC through experiments conducted on several benchmark circuits as well as a circuit from a commercial processor.","PeriodicalId":236182,"journal":{"name":"International Test Conference, 2003. Proceedings. ITC 2003.","volume":"125 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124207281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 31
Latch divergency in microprocessor failure analysis 微处理器故障分析中的锁存器发散
Pub Date : 2003-09-30 DOI: 10.1109/TEST.2003.1270905
P. Dahlgren, P. Dickinson, I. Parulkar
This paper presents an approach for analysis of system state differences observable through the scan chain for the debug of functional failures. A novel methodology for Latch Divergence Analysis (LDA) is proposed for creating stable failure signatures and reducing system noise. The methodology and processing flow have been integrated into the normal debug flow for the UltraSPARCTM family processors and have been successfully applied in numerous debugs in the bring-up of new products.
本文提出了一种分析通过扫描链观察到的系统状态差异的方法,用于功能故障的调试。提出了一种新的锁存散度分析(LDA)方法,以产生稳定的故障特征并降低系统噪声。该方法和处理流程已集成到UltraSPARCTM系列处理器的正常调试流程中,并已成功地应用于新产品开发中的许多调试中。
{"title":"Latch divergency in microprocessor failure analysis","authors":"P. Dahlgren, P. Dickinson, I. Parulkar","doi":"10.1109/TEST.2003.1270905","DOIUrl":"https://doi.org/10.1109/TEST.2003.1270905","url":null,"abstract":"This paper presents an approach for analysis of system state differences observable through the scan chain for the debug of functional failures. A novel methodology for Latch Divergence Analysis (LDA) is proposed for creating stable failure signatures and reducing system noise. The methodology and processing flow have been integrated into the normal debug flow for the UltraSPARCTM family processors and have been successfully applied in numerous debugs in the bring-up of new products.","PeriodicalId":236182,"journal":{"name":"International Test Conference, 2003. Proceedings. ITC 2003.","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129041362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 48
期刊
International Test Conference, 2003. Proceedings. ITC 2003.
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1