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2018 13th European Microwave Integrated Circuits Conference (EuMIC)最新文献

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Variable Gain Distributed Amplifier with Capacitive Division 电容分路可变增益分布式放大器
Pub Date : 2018-09-01 DOI: 10.23919/eumc.2018.8541522
C. V. Vangerow, Daniel Stracke, D. Kissinger, T. Zwick
In this work the design of variable gain amplifiers using the distributed amplifier topology with capacitive division is explored. The effects of the capacitive division technique on gain, line attenuation and bandwidth of the amplifier in different bias states are analyzed by means of circuit simulations and theoretical investigations. The designed 3-stage circuit shows a gain range from −0.1 to 11.9 dB at a bandwidth of at least 1.2-83 GHz over all measured gain states. At maximum gain the upper 3dB frequency exceeds 110 GHz. The circuit fabricated in a 130 nm SiGe BiCMOS technology has a chip area of 0.4 mm2and a power consumption of 72 mW at the maximum gain state.
本文探讨了采用电容除法的分布式放大器拓扑设计变增益放大器的方法。通过电路仿真和理论研究,分析了电容分频技术在不同偏置状态下对放大器增益、线路衰减和带宽的影响。设计的三级电路在所有测量增益状态下的增益范围为- 0.1至11.9 dB,带宽至少为1.2-83 GHz。在最大增益下,上3dB频率超过110 GHz。该电路采用130 nm SiGe BiCMOS技术制造,芯片面积为0.4 mm2,最大增益状态下功耗为72 mW。
{"title":"Variable Gain Distributed Amplifier with Capacitive Division","authors":"C. V. Vangerow, Daniel Stracke, D. Kissinger, T. Zwick","doi":"10.23919/eumc.2018.8541522","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541522","url":null,"abstract":"In this work the design of variable gain amplifiers using the distributed amplifier topology with capacitive division is explored. The effects of the capacitive division technique on gain, line attenuation and bandwidth of the amplifier in different bias states are analyzed by means of circuit simulations and theoretical investigations. The designed 3-stage circuit shows a gain range from −0.1 to 11.9 dB at a bandwidth of at least 1.2-83 GHz over all measured gain states. At maximum gain the upper 3dB frequency exceeds 110 GHz. The circuit fabricated in a 130 nm SiGe BiCMOS technology has a chip area of 0.4 mm2and a power consumption of 72 mW at the maximum gain state.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117260159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Novel Push-Push Frequency Doubler Concept 新颖的推推式倍频器概念
Pub Date : 2018-09-01 DOI: 10.23919/EUMIC.2018.8539879
S. Vehring, G. Boeck
This paper presents a novel push-push frequency doubler concept which can deliver high balanced output power. Two lumped couplers provide balanced quadrature input signaling for two doubler cells. As a result, the output signals of the two doubler cells form an inherently balanced output and a lossy output transformer can be avoided. Hence, higher output power and efficiency can be achieved. Moreover, high fundamental rejection and supply suppression with low LO leakage into other circuit blocks are further advantages. As a proof of concept, a K-band doubler is implemented in a 65 nm CMOS technology. At 0 dBm input power, the circuit delivers 4.3 dBm output power with more than 6 % PAE. The chip draws 24 mA from a 1.2 V supply and the total chip area is 0.85 × 0.55 mm2, The fundamental suppression is around 44 dBc. The concept is applicable to other technologies and frequencies as well.
本文提出了一种新颖的推推式倍频器的概念,可以提供高平衡的输出功率。两个集总耦合器为两个倍频单元提供平衡的正交输入信号。因此,两个倍频单元的输出信号形成一个固有的平衡输出,并且可以避免损耗输出变压器。因此,可以实现更高的输出功率和效率。此外,高基波抑制和低LO泄漏到其他电路块的电源抑制是进一步的优势。作为概念验证,k波段倍频器在65纳米CMOS技术中实现。在输入功率为0 dBm时,电路输出功率为4.3 dBm, PAE大于6%。该芯片从1.2 V电源中吸取24 mA,芯片总面积为0.85 × 0.55 mm2,基波抑制约为44 dBc。这个概念也适用于其他技术和频率。
{"title":"Novel Push-Push Frequency Doubler Concept","authors":"S. Vehring, G. Boeck","doi":"10.23919/EUMIC.2018.8539879","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539879","url":null,"abstract":"This paper presents a novel push-push frequency doubler concept which can deliver high balanced output power. Two lumped couplers provide balanced quadrature input signaling for two doubler cells. As a result, the output signals of the two doubler cells form an inherently balanced output and a lossy output transformer can be avoided. Hence, higher output power and efficiency can be achieved. Moreover, high fundamental rejection and supply suppression with low LO leakage into other circuit blocks are further advantages. As a proof of concept, a K-band doubler is implemented in a 65 nm CMOS technology. At 0 dBm input power, the circuit delivers 4.3 dBm output power with more than 6 % PAE. The chip draws 24 mA from a 1.2 V supply and the total chip area is 0.85 × 0.55 mm2, The fundamental suppression is around 44 dBc. The concept is applicable to other technologies and frequencies as well.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123505554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Frequency Multipliers Based on Hybrid Technology with High Harmonic Suppression 基于高谐波抑制混合技术的倍频器
Pub Date : 2018-09-01 DOI: 10.23919/eumic.2018.8539918
Álvaro Díez López, Amparo Herrera Guardado, Juan Carlos Pérez Ambrojo
A wideband frequency multipliers using SiGe bipolar transistors are proposed in this paper. The main circuit of these frequency multipliers consists of an attenuator followed by a bias network and a band pass filter which selects the desired harmonic at the output. The designed doubler can convert a 2–3 GHz input signal to a 4–6 GHz signal, with high suppressions of 59 dB, and 41 dB on the fundamental, and the third harmonic respectively. The tripler can convert a 2.3-2.7 GHz input signal to a 7–8 GHz signal, with suppressions of 68 dB, 52 dB, and 43 dB on the fundamental, the second, and fourth harmonics respectively.
提出了一种基于SiGe双极晶体管的宽带倍频器。这些倍频器的主电路由一个衰减器、一个偏置网络和一个带通滤波器组成,带通滤波器在输出端选择所需的谐波。所设计的倍频器可以将2-3 GHz的输入信号转换为4-6 GHz的信号,对基频和三次谐波分别有59 dB和41 dB的高抑制。该三倍器可将2.3-2.7 GHz的输入信号转换为7-8 GHz的信号,对基频、二次谐波和四次谐波的抑制分别为68 dB、52 dB和43 dB。
{"title":"Frequency Multipliers Based on Hybrid Technology with High Harmonic Suppression","authors":"Álvaro Díez López, Amparo Herrera Guardado, Juan Carlos Pérez Ambrojo","doi":"10.23919/eumic.2018.8539918","DOIUrl":"https://doi.org/10.23919/eumic.2018.8539918","url":null,"abstract":"A wideband frequency multipliers using SiGe bipolar transistors are proposed in this paper. The main circuit of these frequency multipliers consists of an attenuator followed by a bias network and a band pass filter which selects the desired harmonic at the output. The designed doubler can convert a 2–3 GHz input signal to a 4–6 GHz signal, with high suppressions of 59 dB, and 41 dB on the fundamental, and the third harmonic respectively. The tripler can convert a 2.3-2.7 GHz input signal to a 7–8 GHz signal, with suppressions of 68 dB, 52 dB, and 43 dB on the fundamental, the second, and fourth harmonics respectively.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131741916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
First K-band Capable 12-bit 6 GSps Digital to Analogue Converter 第一个k波段的12位6 GSps数字模拟转换器
Pub Date : 2018-09-01 DOI: 10.23919/EUMIC.2018.8539871
R. Pilard, J. Duvernay, M. Wingender, F. Bore, K. Salmi, N. Chantier
Designers of microwave systems are constantly looking for DACs which provide not only large Nyquist zones (>2.5 GHz), but also offer flat frequency response in these large instantaneous bandwidths. Such DACs allow simplifying the architecture of the complete microwave generation system, thus saving costs. This paper covers the performance of a new generation DAC with a working range up to the K-band. A number of applications of this part will be discussed preliminary to a review of the aspects of interfacing to this component in the digital and analogue domains. Typical single tone and broadband measurement results are proposed in the last part.
微波系统的设计人员一直在寻找不仅提供大奈奎斯特带(>2.5 GHz),而且在这些大瞬时带宽下提供平坦频率响应的dac。这样的dac可以简化整个微波产生系统的架构,从而节省成本。本文介绍了工作范围可达k波段的新一代DAC的性能。本部分的一些应用将被初步讨论,以回顾在数字和模拟领域中与该组件的接口方面。最后给出了典型的单音和宽带测量结果。
{"title":"First K-band Capable 12-bit 6 GSps Digital to Analogue Converter","authors":"R. Pilard, J. Duvernay, M. Wingender, F. Bore, K. Salmi, N. Chantier","doi":"10.23919/EUMIC.2018.8539871","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539871","url":null,"abstract":"Designers of microwave systems are constantly looking for DACs which provide not only large Nyquist zones (>2.5 GHz), but also offer flat frequency response in these large instantaneous bandwidths. Such DACs allow simplifying the architecture of the complete microwave generation system, thus saving costs. This paper covers the performance of a new generation DAC with a working range up to the K-band. A number of applications of this part will be discussed preliminary to a review of the aspects of interfacing to this component in the digital and analogue domains. Typical single tone and broadband measurement results are proposed in the last part.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129052717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
20 GHz Clock Frequency ROM-Less Direct Digital Synthesizer Comprising Unique Phase Control Unit in 0.25 μm SiGe Technology 20 GHz时钟频率无rom直接数字合成器,包含0.25 μm SiGe技术的独特相位控制单元
Pub Date : 2018-09-01 DOI: 10.23919/EUMIC.2018.8539943
A. Shrestha, J. Moll, A. Raemer, M. Hrobak, V. Krozer
This paper presents work on a 20 GHz ROM-less direct digital synthesizer (DDS) with 12-bit phase and 6-bit amplitude resolution in a 0.25μm SiGe technology having ft/fmax 180/220GHz. The DDS is applicable for wireless communications and is capable of generating sinusoidal and complex waveforms up to 10 GHz. The 12-bit reduced size pipeline accumulator has been designed with a novel 6-bit phase control word unit to facilitate digital phase modulation schemes. The DDS has been successfully measured and characterized using a dedicated PCB board. Its operation has been confirmed in terms of frequency settings. The output amplitude from the DDS is lower than expected due to losses in the FR4 PCB. To our knowledge this DDS is the first attempt to employ a digital phase control and is among the fastest DDS in SiGe BiCMOS reported so far. The total power consumption is only 1.54 W. The DDS has an output frequency range from 5 MHz to 10 GHz with worst case spurious free dynamic range (SFDR) of 25 dBc with a maximum clock frequency of 20 GHz. The frequency settling time is below 300 ns.
本文介绍了一个20GHz无rom直接数字合成器(DDS)的工作,该合成器具有12位相位和6位振幅分辨率,采用0.25μm SiGe技术,ft/fmax为180/220GHz。DDS适用于无线通信,能够产生高达10ghz的正弦波和复杂波形。采用新颖的6位相位控制字单元设计了12位缩小尺寸的管道蓄能器,以方便数字相位调制方案。使用专用PCB板成功地测量和表征了DDS。在频率设置方面已经确认了它的运行。由于FR4 PCB中的损耗,DDS的输出幅度低于预期。据我们所知,这个DDS是第一次尝试采用数字相位控制,是迄今为止报道的SiGe BiCMOS中最快的DDS之一。整机功耗仅为1.54 W。DDS的输出频率范围为5mhz ~ 10ghz,最坏情况无杂散动态范围(SFDR)为25dbc,最大时钟频率为20ghz。频率稳定时间小于300ns。
{"title":"20 GHz Clock Frequency ROM-Less Direct Digital Synthesizer Comprising Unique Phase Control Unit in 0.25 μm SiGe Technology","authors":"A. Shrestha, J. Moll, A. Raemer, M. Hrobak, V. Krozer","doi":"10.23919/EUMIC.2018.8539943","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539943","url":null,"abstract":"This paper presents work on a 20 GHz ROM-less direct digital synthesizer (DDS) with 12-bit phase and 6-bit amplitude resolution in a 0.25μm SiGe technology having ft/fmax 180/220GHz. The DDS is applicable for wireless communications and is capable of generating sinusoidal and complex waveforms up to 10 GHz. The 12-bit reduced size pipeline accumulator has been designed with a novel 6-bit phase control word unit to facilitate digital phase modulation schemes. The DDS has been successfully measured and characterized using a dedicated PCB board. Its operation has been confirmed in terms of frequency settings. The output amplitude from the DDS is lower than expected due to losses in the FR4 PCB. To our knowledge this DDS is the first attempt to employ a digital phase control and is among the fastest DDS in SiGe BiCMOS reported so far. The total power consumption is only 1.54 W. The DDS has an output frequency range from 5 MHz to 10 GHz with worst case spurious free dynamic range (SFDR) of 25 dBc with a maximum clock frequency of 20 GHz. The frequency settling time is below 300 ns.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129106163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
2018 13th European Microwave Integrated Circuits Conference 2018第十三届欧洲微波集成电路会议
Pub Date : 2018-09-01 DOI: 10.23919/eumic.2018.8539863
{"title":"2018 13th European Microwave Integrated Circuits Conference","authors":"","doi":"10.23919/eumic.2018.8539863","DOIUrl":"https://doi.org/10.23919/eumic.2018.8539863","url":null,"abstract":"","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123362740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New Compact Antenna Diversity with a Fully Integrated Microwave Circuit for Automotive Satellite Radio Reception 新型紧凑型天线分集与一个完全集成的微波电路用于汽车卫星无线电接收
Pub Date : 2018-09-01 DOI: 10.23919/eumc.2018.8541625
S. Senega, Jürgen Röber, A. Nassar, R. Weigel, C. Heuer, S. Lindenmeier
A compact antenna diversity system with a new integrated circuit is presented for automotive reception of satellite digital audio radio services (SDARS) at 2.3 GHz. For a scan-phase antenna diversity with switching and phase alignment of up to three antenna paths, the integrated circuit includes RF switches, phase-alignment and signal combining as well as the frequency conversion for level detection. This is the first integrated circuit for SDARS scan-phase antenna diversity, which includes all the diversity functions except for level detection and digital signal processing. With the integrated circuit with a package size of only 9 mm by 9 mm a compact hardware demonstrator is realized. The diversity circuit is independent of the radio and offers the same interface to the radio as a conventional single antenna. In laboratory measurements characteristic values of the RF signal paths like gain and variable phase shift are determined. In addition, the new compact diversity circuit is also evaluated in a real fading scenario on a single side mirror of the test vehicle showing a significant reduction of audio mutes by the diversity system compared to single antenna reception.
提出了一种采用新型集成电路的小型天线分集系统,用于车载接收2.3 GHz卫星数字音频无线电业务(SDARS)。对于具有最多三个天线路径的开关和相位对准的扫描相位天线分集,集成电路包括射频开关,相位对准和信号组合以及电平检测的频率转换。这是第一个用于SDARS扫描相位天线分集的集成电路,它包含了除电平检测和数字信号处理之外的所有分集功能。该集成电路的封装尺寸仅为9mm × 9mm,实现了一个紧凑的硬件演示器。分集电路独立于无线电,并提供与传统单天线相同的无线电接口。在实验室测量中,确定了增益和变相移等射频信号路径的特征值。此外,新型紧凑型分集电路还在测试车辆的单侧后视镜上进行了真实衰落场景评估,结果显示,与单天线接收相比,分集系统显著减少了音频静音。
{"title":"New Compact Antenna Diversity with a Fully Integrated Microwave Circuit for Automotive Satellite Radio Reception","authors":"S. Senega, Jürgen Röber, A. Nassar, R. Weigel, C. Heuer, S. Lindenmeier","doi":"10.23919/eumc.2018.8541625","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541625","url":null,"abstract":"A compact antenna diversity system with a new integrated circuit is presented for automotive reception of satellite digital audio radio services (SDARS) at 2.3 GHz. For a scan-phase antenna diversity with switching and phase alignment of up to three antenna paths, the integrated circuit includes RF switches, phase-alignment and signal combining as well as the frequency conversion for level detection. This is the first integrated circuit for SDARS scan-phase antenna diversity, which includes all the diversity functions except for level detection and digital signal processing. With the integrated circuit with a package size of only 9 mm by 9 mm a compact hardware demonstrator is realized. The diversity circuit is independent of the radio and offers the same interface to the radio as a conventional single antenna. In laboratory measurements characteristic values of the RF signal paths like gain and variable phase shift are determined. In addition, the new compact diversity circuit is also evaluated in a real fading scenario on a single side mirror of the test vehicle showing a significant reduction of audio mutes by the diversity system compared to single antenna reception.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126269893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
X-Parameter Characterization of LDMOS Devices for Broadband Doherty High-Power Amplifier Design 用于宽带Doherty大功率放大器设计的LDMOS器件的x参数表征
Pub Date : 2018-09-01 DOI: 10.23919/EUMIC.2018.8539913
A. Cidronali, G. Collodi
We present a novel design approach of high-power broadband Doherty amplifier (DPA) by the X-parameters. It is based on the nonlinear vector network analysis of the 3-port circuit composed of the main and peak power devices, connected to the input network. The technique permits the analysis of the best termination for both the peak and main devices, mutually interacting by the input network, and development of the broadband output networks which optimizes the mutual devices load modulation. The three-port nonlinear vector characterization method was applied to the analysis of a broadband DPA designs based on a pair of Silicon Laterally Diffused MOSFETs (LDMOS) with optimized peak power and efficiency in the 700 MHz to 960 MHz bandwidth. The DPA performance exhibited a peak power of 54.2 dBm at center frequency with a peak drain efficiency up to 71.5%. and a drain efficiency in excess of 68 % within 8-dB back-off at center frequency band.
提出了一种基于x参数的高功率宽带多尔蒂放大器(DPA)设计方法。它是基于非线性矢量网络分析的3口电路组成的主和峰值功率器件,连接到输入网络。该技术允许分析由输入网络相互作用的峰值和主设备的最佳终端,并开发优化相互设备负载调制的宽带输出网络。采用三端口非线性矢量表征方法分析了在700 ~ 960 MHz带宽范围内,基于一对硅横向扩散mosfet (LDMOS)优化峰值功率和效率的宽带DPA设计。DPA在中心频率处的峰值功率为54.2 dBm,峰值漏极效率高达71.5%。在中心频段,在8db退偏范围内,漏极效率超过68%。
{"title":"X-Parameter Characterization of LDMOS Devices for Broadband Doherty High-Power Amplifier Design","authors":"A. Cidronali, G. Collodi","doi":"10.23919/EUMIC.2018.8539913","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539913","url":null,"abstract":"We present a novel design approach of high-power broadband Doherty amplifier (DPA) by the X-parameters. It is based on the nonlinear vector network analysis of the 3-port circuit composed of the main and peak power devices, connected to the input network. The technique permits the analysis of the best termination for both the peak and main devices, mutually interacting by the input network, and development of the broadband output networks which optimizes the mutual devices load modulation. The three-port nonlinear vector characterization method was applied to the analysis of a broadband DPA designs based on a pair of Silicon Laterally Diffused MOSFETs (LDMOS) with optimized peak power and efficiency in the 700 MHz to 960 MHz bandwidth. The DPA performance exhibited a peak power of 54.2 dBm at center frequency with a peak drain efficiency up to 71.5%. and a drain efficiency in excess of 68 % within 8-dB back-off at center frequency band.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125517573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Robust X-band GaN LNA with Integrated Active Limiter 集成有源限制器的鲁棒x波段GaN LNA
Pub Date : 2018-09-01 DOI: 10.23919/eumc.2018.8541779
Çağdaş Yağbasan, Ahmet Aktuğ
In this paper, design and measurement of X-Band monolithic microwave integrated circuit (MMIC) low noise amplifiers (LNA) using a commercial 0.25 um microstrip GaN-on-SiC high electron mobility transistor (HEMT) technology are reported. Using a novel active limiting approach in measurements, lower than 1.75 dB noise figure (NF) and higher than 16 W CW input power survivability is obtained from a single chip. To the best of authors' knowledge, said LNA has the highest input power handling performance for the given noise figure level although transistors are not optimized for low-noise operation and input matching network is realized to compromise between noise figure and input return loss which is better than 10 dB. Results are promising for single chip GaN frontend transceiver architecture realization.
本文报道了采用商用0.25 um微带GaN-on-SiC高电子迁移率晶体管(HEMT)技术的x波段单片微波集成电路(MMIC)低噪声放大器(LNA)的设计和测量。采用一种新颖的主动限制测量方法,在单个芯片上获得了低于1.75 dB的噪声系数(NF)和高于16 W的连续波输入功率生存能力。据作者所知,在给定的噪声系数水平下,该LNA具有最高的输入功率处理性能,尽管晶体管没有针对低噪声工作进行优化,并且实现了输入匹配网络,以折衷噪声系数和输入回波损耗(优于10 dB)。研究结果为单片GaN前端收发器架构的实现提供了前景。
{"title":"Robust X-band GaN LNA with Integrated Active Limiter","authors":"Çağdaş Yağbasan, Ahmet Aktuğ","doi":"10.23919/eumc.2018.8541779","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541779","url":null,"abstract":"In this paper, design and measurement of X-Band monolithic microwave integrated circuit (MMIC) low noise amplifiers (LNA) using a commercial 0.25 um microstrip GaN-on-SiC high electron mobility transistor (HEMT) technology are reported. Using a novel active limiting approach in measurements, lower than 1.75 dB noise figure (NF) and higher than 16 W CW input power survivability is obtained from a single chip. To the best of authors' knowledge, said LNA has the highest input power handling performance for the given noise figure level although transistors are not optimized for low-noise operation and input matching network is realized to compromise between noise figure and input return loss which is better than 10 dB. Results are promising for single chip GaN frontend transceiver architecture realization.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115233764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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This publication has been designed for use with Adobe Reader 8 or later 本出版物是为使用adobereader 8或更高版本而设计的
Pub Date : 2018-08-01 DOI: 10.1109/emceurope.2018.8485110
{"title":"This publication has been designed for use with Adobe Reader 8 or later","authors":"","doi":"10.1109/emceurope.2018.8485110","DOIUrl":"https://doi.org/10.1109/emceurope.2018.8485110","url":null,"abstract":"","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116383470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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期刊
2018 13th European Microwave Integrated Circuits Conference (EuMIC)
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