Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539873
C. O'Sullivan, Chris Campbell, Maeve Colbert, Darren Collins, Patrick Kelleher, Krzystof Niewiadomski, F. Pini, Jan Pleskac, Tim O'Connor, Jerry O'Mahony, Paddy O'Reilly, K. O'Sullivan
This paper describes the first single chip transceiver for Mobile Satellite Services that does not require external mixers, LNA or IF filter. The IC supports LEO satellite constellations including those using small satellites in L band up to 240k symbols per second (ksps). The RFIC allows data connectivity globally in new applications and enables remote devices and sensors to be connected to the Internet of Things. The chip integrates TX and dual RX paths from digital to RF and includes a DPD algorithm for PA linearization with a feedback path.
{"title":"A Highly Integrated Transceiver for Mobile Satellite Services User Terminals Incorporating Dual Receivers for Satellite Handover and Digital Pre-Distortion for PA Linearization on 0.18μm CMOS","authors":"C. O'Sullivan, Chris Campbell, Maeve Colbert, Darren Collins, Patrick Kelleher, Krzystof Niewiadomski, F. Pini, Jan Pleskac, Tim O'Connor, Jerry O'Mahony, Paddy O'Reilly, K. O'Sullivan","doi":"10.23919/EUMIC.2018.8539873","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539873","url":null,"abstract":"This paper describes the first single chip transceiver for Mobile Satellite Services that does not require external mixers, LNA or IF filter. The IC supports LEO satellite constellations including those using small satellites in L band up to 240k symbols per second (ksps). The RFIC allows data connectivity globally in new applications and enables remote devices and sensors to be connected to the Internet of Things. The chip integrates TX and dual RX paths from digital to RF and includes a DPD algorithm for PA linearization with a feedback path.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115390458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/eumc.2018.8541751
E. N. Lima, Takayuki Tanaka, I. Toyoda
This paper presents an injection-locked push-push oscillator which generates the second harmonic signal in Ku-band. Two sub-oscillators operate in-phase at the same fundamental frequency in a two-wavelength ring resonator. Moreover, two external injection signals are placed on the resonator at a half-wavelength between the sub-oscillators. The oscillator does not require additional phase-shift between the injection signals, and this task is done by the resonator and the power combining circuit. The push-push principle is satisfied by synchronization due to the phase relation of the sub-oscillators and the external injection signal source. Phase noise improvement was achieved by the injection locking,
{"title":"A Ku-Band Injection-Locked Push-Push Oscillator Using Two-Wavelength Ring Resonator","authors":"E. N. Lima, Takayuki Tanaka, I. Toyoda","doi":"10.23919/eumc.2018.8541751","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541751","url":null,"abstract":"This paper presents an injection-locked push-push oscillator which generates the second harmonic signal in Ku-band. Two sub-oscillators operate in-phase at the same fundamental frequency in a two-wavelength ring resonator. Moreover, two external injection signals are placed on the resonator at a half-wavelength between the sub-oscillators. The oscillator does not require additional phase-shift between the injection signals, and this task is done by the resonator and the power combining circuit. The push-push principle is satisfied by synchronization due to the phase relation of the sub-oscillators and the external injection signal source. Phase noise improvement was achieved by the injection locking,","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"78 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127112866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539947
Gian Piero Gibiino, A. Santarelli, F. Filicori
A charge function identification procedure for GaN-HEMTs is proposed. This is based on a frequency-domain integration of displacement current waveforms obtained from an auxiliary model extracted from multi-bias S-parameters. The method is compared with a similar technique recently proposed, which is instead based on direct acquisitions of large-signal waveforms at the transistor ports by means of a nonlinear vector network analyzer (NVNA). Comparisons between the two approaches are provided by using a 1-mm GaN-on-SiC HEMT, leading to conclude that thermal and trap-induced dispersion on charges have an impact quantified in ∼ 4% − 18% normalized mean square error on the displacement current prediction, depending on the waveforms considered.
{"title":"A Procedure for GaN HEMT Charge Functions Extraction from Multi-Bias S-Parameters","authors":"Gian Piero Gibiino, A. Santarelli, F. Filicori","doi":"10.23919/EUMIC.2018.8539947","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539947","url":null,"abstract":"A charge function identification procedure for GaN-HEMTs is proposed. This is based on a frequency-domain integration of displacement current waveforms obtained from an auxiliary model extracted from multi-bias S-parameters. The method is compared with a similar technique recently proposed, which is instead based on direct acquisitions of large-signal waveforms at the transistor ports by means of a nonlinear vector network analyzer (NVNA). Comparisons between the two approaches are provided by using a 1-mm GaN-on-SiC HEMT, leading to conclude that thermal and trap-induced dispersion on charges have an impact quantified in ∼ 4% − 18% normalized mean square error on the displacement current prediction, depending on the waveforms considered.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125641562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539957
K. Takano, R. Dong, Sangyeop Lee, S. Amakawa, T. Yoshida, M. Fujishima
In order to realize a wideband frequency multiplier at terahertz frequencies, iterative optimization of circuit parameters is necessary. However, iterative execution of nonlinear simulation takes a prohibitively long time. We present a small-signal harmonic model, which is equivalent to using only the dominant components of a full set of X-parameters, to solve the problem. It is a simple but accurate nonlinear model suitable for obtaining the frequency response. A 300-GHz frequency doubler with an eight-stage driver amplifier is designed by using the technique. The frequency doubler is fabricated using a 40-nm CMOS process. It achieves a 3-dB bandwidth of 76 GHz from 239 to 315 GHz and a maximum output power of −10 dBm.
{"title":"A 239-315 GHz CMOS Frequency Doubler Designed by Using a Small-Signal Harmonic Model","authors":"K. Takano, R. Dong, Sangyeop Lee, S. Amakawa, T. Yoshida, M. Fujishima","doi":"10.23919/EUMIC.2018.8539957","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539957","url":null,"abstract":"In order to realize a wideband frequency multiplier at terahertz frequencies, iterative optimization of circuit parameters is necessary. However, iterative execution of nonlinear simulation takes a prohibitively long time. We present a small-signal harmonic model, which is equivalent to using only the dominant components of a full set of X-parameters, to solve the problem. It is a simple but accurate nonlinear model suitable for obtaining the frequency response. A 300-GHz frequency doubler with an eight-stage driver amplifier is designed by using the technique. The frequency doubler is fabricated using a 40-nm CMOS process. It achieves a 3-dB bandwidth of 76 GHz from 239 to 315 GHz and a maximum output power of −10 dBm.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129315323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/eumc.2018.8541777
L. Pantoli, A. Barigelli, G. Leuzzi, F. Vitulli, A. Suriani
The paper deals with the development of a state-of-the-art medium level amplifier able to combine good noise performance with a high P1dB compression point. The MMIC is realized with a balanced structure and making use of the PH25 GaAs pHEMT process provided by UMS. The balanced structure allows to achieve a gain of 19 dB with a P1dB compression point greater than 15 dBm and a noise figure of about 3 dB in a large bandwidth spanning from 26.5 GHz to 31.5 GHz. The chip has a single bias pad; the input and output bond wires are directly matched on chip, so easingenhancing the mechanical integration in the front-end.
{"title":"GaAs Balanced Amplifier for Ka-Band Space Communications System","authors":"L. Pantoli, A. Barigelli, G. Leuzzi, F. Vitulli, A. Suriani","doi":"10.23919/eumc.2018.8541777","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541777","url":null,"abstract":"The paper deals with the development of a state-of-the-art medium level amplifier able to combine good noise performance with a high P1dB compression point. The MMIC is realized with a balanced structure and making use of the PH25 GaAs pHEMT process provided by UMS. The balanced structure allows to achieve a gain of 19 dB with a P1dB compression point greater than 15 dBm and a noise figure of about 3 dB in a large bandwidth spanning from 26.5 GHz to 31.5 GHz. The chip has a single bias pad; the input and output bond wires are directly matched on chip, so easingenhancing the mechanical integration in the front-end.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130466881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539888
Arrnagan Gurdal, Burak Alptug Yilmaz, O. Cengiz, O. Sen, E. Ozbay
An X-Band Monolithic Microwave Integrated Circuit (MMIC) High Power Amplifier (HPA) with coplanar waveguide (CPW) based on AlGaN/GaN on SiC technology is presented in this paper. Coplanar waveguide technology (CPW) is chosen for the simplicity and reduced cost of fabrication since CPW process has no via. High Electron Mobility Transistors (HEMTs) are matched for the 8 GHz-8.4GHz frequency band for maximum output power. The Amplifier has a small signal gain over 10 dB, output power of 36.5dBm at 1 dB gain compression point (P1dB) and 40% power added efficiency (PAE) at (PldB) in the desired frequency band (8 GHz-8.4 GHz) with Vds = 30V.
{"title":"X Band GaN Based MMIC Power Amplifier with 36.5dBm P1-dB for Space Applications","authors":"Arrnagan Gurdal, Burak Alptug Yilmaz, O. Cengiz, O. Sen, E. Ozbay","doi":"10.23919/EUMIC.2018.8539888","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539888","url":null,"abstract":"An X-Band Monolithic Microwave Integrated Circuit (MMIC) High Power Amplifier (HPA) with coplanar waveguide (CPW) based on AlGaN/GaN on SiC technology is presented in this paper. Coplanar waveguide technology (CPW) is chosen for the simplicity and reduced cost of fabrication since CPW process has no via. High Electron Mobility Transistors (HEMTs) are matched for the 8 GHz-8.4GHz frequency band for maximum output power. The Amplifier has a small signal gain over 10 dB, output power of 36.5dBm at 1 dB gain compression point (P1dB) and 40% power added efficiency (PAE) at (PldB) in the desired frequency band (8 GHz-8.4 GHz) with Vds = 30V.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114265791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539936
M. van Heijningen, J. Essing, F. V. van Vliet
In the transmit chain of high-power phased-array radars more and more use is made of Gallium-Nitride (GaN) high-power amplifiers (HPAs), while in the receive chain there is a trend to move to integrated silicon (Si) based components. The GaN amplifiers usually require a relatively high input power, making it necessary to include a medium power driver amplifier. For phased-array operation also a phase shifter in the transmit chain is required. In this paper the design and measurement results of an integrated phase-shifter-driver MMIC are presented, which has been optimized to directly drive an X-band GaN HP A. This Gallium-Arsenide (GaAs) MMIC has been designed to fit in a low-cost plastic QFN package to reduce the cost of the front-end module assembly. The realized QFN-packaged MMIC features a 6-bit digital phase shifter and a CW output power of more than 22 dBm at a source power of 5 dBm, from 8 to 11 GHz. Over this bandwidth the measured RMS phase error is less than 5°.
在大功率相控阵雷达的发射链中越来越多地使用氮化镓(GaN)大功率放大器，而在接收链中则有向集成硅(Si)基器件发展的趋势。氮化镓放大器通常需要一个相对较高的输入功率，使得它有必要包括一个中等功率的驱动放大器。对于相控阵操作，在发射链中也需要一个移相器。本文介绍了一种集成移相驱动器MMIC的设计和测量结果，该MMIC经过优化，可直接驱动x波段GaN HP a。这种砷化镓(GaAs) MMIC被设计成适合低成本的塑料QFN封装，以降低前端模块组装的成本。所实现的qfn封装MMIC具有6位数字移相器，源功率为5 dBm，连续波输出功率超过22 dBm，范围为8至11 GHz。在此带宽范围内，测量的均方根相位误差小于5°。
{"title":"X-Band GaAs Phase Driver MMIC Optimized for GaN-Based Phased-Array Radar Transmit Chain","authors":"M. van Heijningen, J. Essing, F. V. van Vliet","doi":"10.23919/EUMIC.2018.8539936","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539936","url":null,"abstract":"In the transmit chain of high-power phased-array radars more and more use is made of Gallium-Nitride (GaN) high-power amplifiers (HPAs), while in the receive chain there is a trend to move to integrated silicon (Si) based components. The GaN amplifiers usually require a relatively high input power, making it necessary to include a medium power driver amplifier. For phased-array operation also a phase shifter in the transmit chain is required. In this paper the design and measurement results of an integrated phase-shifter-driver MMIC are presented, which has been optimized to directly drive an X-band GaN HP A. This Gallium-Arsenide (GaAs) MMIC has been designed to fit in a low-cost plastic QFN package to reduce the cost of the front-end module assembly. The realized QFN-packaged MMIC features a 6-bit digital phase shifter and a CW output power of more than 22 dBm at a source power of 5 dBm, from 8 to 11 GHz. Over this bandwidth the measured RMS phase error is less than 5°.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125239989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539870
C. Person, D. Nguyen, J. Coupez, P. Minard, D. L. Tong, P. Borel, D. Izoard
Advanced internet and multimedia set-top boxes are today massively based on 4*4 MIMO systems, with multi-sub-bands standards (WIFI bands, LTE, Bluetooth, …). Interconnections between the numerous access ports of different radio chipsets mounted on a main PCB (Printed Circuit Board) and multiple antennas spatially distributed on the plastic casing become therefore a great challenge for cost and performances motivations. The flex technology, based on well-controlled and low cost process, brings new functionalities and opportunities for assembling sub-systems, under compactness considerations, as well as electrical performances improvement. In this paper, we discuss about the characterisation of connectors used for flexible printed circuit to a main PCB interconnections. The choice of the connectors is a critical issue, and must be properly done considering both local ground and signal interconnections constraints. Simulation and measurements are performed up to 15Ghz covering WIFI bands
{"title":"Characterization of Flex to Printed Circuit Board Interconnections Using Insertion Connectors","authors":"C. Person, D. Nguyen, J. Coupez, P. Minard, D. L. Tong, P. Borel, D. Izoard","doi":"10.23919/EUMIC.2018.8539870","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539870","url":null,"abstract":"Advanced internet and multimedia set-top boxes are today massively based on 4*4 MIMO systems, with multi-sub-bands standards (WIFI bands, LTE, Bluetooth, …). Interconnections between the numerous access ports of different radio chipsets mounted on a main PCB (Printed Circuit Board) and multiple antennas spatially distributed on the plastic casing become therefore a great challenge for cost and performances motivations. The flex technology, based on well-controlled and low cost process, brings new functionalities and opportunities for assembling sub-systems, under compactness considerations, as well as electrical performances improvement. In this paper, we discuss about the characterisation of connectors used for flexible printed circuit to a main PCB interconnections. The choice of the connectors is a critical issue, and must be properly done considering both local ground and signal interconnections constraints. Simulation and measurements are performed up to 15Ghz covering WIFI bands","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127048627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539960
C. Wilson, J. King
In this paper an experiment has been carried out, in MATLAB, where measured S-parameters from a 10W MACOM wafer device have been fit using an equivalent circuit model. The extracted intrinsic element values aim to keep the modelled and measured results in good agreement with one another while ensuring capacitance values do not break the principles of charge conservation. The model has been verified using measured S-parameters taken over a wide bias plane as well as at frequencies ranging up to 10GHz. The results from our experiment shows an accurate intrinsic model with smooth realistic capacitances between the gate-source and gate-drain terminals while ensuring charge conservation.
{"title":"Ensuring Charge Conservation in GaN HEMT Large Signal Model","authors":"C. Wilson, J. King","doi":"10.23919/EUMIC.2018.8539960","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539960","url":null,"abstract":"In this paper an experiment has been carried out, in MATLAB, where measured S-parameters from a 10W MACOM wafer device have been fit using an equivalent circuit model. The extracted intrinsic element values aim to keep the modelled and measured results in good agreement with one another while ensuring capacitance values do not break the principles of charge conservation. The model has been verified using measured S-parameters taken over a wide bias plane as well as at frequencies ranging up to 10GHz. The results from our experiment shows an accurate intrinsic model with smooth realistic capacitances between the gate-source and gate-drain terminals while ensuring charge conservation.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128397045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/eumc.2018.8541776
H. Ikeuchi, T. Kawaguchi, N. Shiokawa, Y. Sawahara, H. Kayano
We have developed an X-band low noise figure (NF) T/R switch-module using a superconducting T/R switch. The superconducting T/R switch was realized by combining a six-port network, two impedance transformers and two varactor diodes. The six-port network consists of oneλ/4 transmission line, two λ/2 transmission lines and one 3λ/4 transmission line. For each λ/2 transmission line, a single varactor diode was connected to the center of a given λ/2 transmission line by using one of the aforementioned impedance transformers. The superconducting T/R switch was fabricated using a high-Tc superconducting material called YBCO. An insertion loss of 0.3 dB was measured in Rx mode. By combining the superconducting T/R switch with a limiter and a low noise amplifier (LNA), a low NF T/R switch-module was designed. Measurements performed at X-band show an NF of 0.7 dB, which confirms the design procedure of a low NF T/R switch-module.
{"title":"X-Band Low Noise Figure T/R Switch-Module Using a Superconducting T/R Switch","authors":"H. Ikeuchi, T. Kawaguchi, N. Shiokawa, Y. Sawahara, H. Kayano","doi":"10.23919/eumc.2018.8541776","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541776","url":null,"abstract":"We have developed an X-band low noise figure (NF) T/R switch-module using a superconducting T/R switch. The superconducting T/R switch was realized by combining a six-port network, two impedance transformers and two varactor diodes. The six-port network consists of oneλ/4 transmission line, two λ/2 transmission lines and one 3λ/4 transmission line. For each λ/2 transmission line, a single varactor diode was connected to the center of a given λ/2 transmission line by using one of the aforementioned impedance transformers. The superconducting T/R switch was fabricated using a high-Tc superconducting material called YBCO. An insertion loss of 0.3 dB was measured in Rx mode. By combining the superconducting T/R switch with a limiter and a low noise amplifier (LNA), a low NF T/R switch-module was designed. Measurements performed at X-band show an NF of 0.7 dB, which confirms the design procedure of a low NF T/R switch-module.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128949187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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