Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539873
C. O'Sullivan, Chris Campbell, Maeve Colbert, Darren Collins, Patrick Kelleher, Krzystof Niewiadomski, F. Pini, Jan Pleskac, Tim O'Connor, Jerry O'Mahony, Paddy O'Reilly, K. O'Sullivan
This paper describes the first single chip transceiver for Mobile Satellite Services that does not require external mixers, LNA or IF filter. The IC supports LEO satellite constellations including those using small satellites in L band up to 240k symbols per second (ksps). The RFIC allows data connectivity globally in new applications and enables remote devices and sensors to be connected to the Internet of Things. The chip integrates TX and dual RX paths from digital to RF and includes a DPD algorithm for PA linearization with a feedback path.
{"title":"A Highly Integrated Transceiver for Mobile Satellite Services User Terminals Incorporating Dual Receivers for Satellite Handover and Digital Pre-Distortion for PA Linearization on 0.18μm CMOS","authors":"C. O'Sullivan, Chris Campbell, Maeve Colbert, Darren Collins, Patrick Kelleher, Krzystof Niewiadomski, F. Pini, Jan Pleskac, Tim O'Connor, Jerry O'Mahony, Paddy O'Reilly, K. O'Sullivan","doi":"10.23919/EUMIC.2018.8539873","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539873","url":null,"abstract":"This paper describes the first single chip transceiver for Mobile Satellite Services that does not require external mixers, LNA or IF filter. The IC supports LEO satellite constellations including those using small satellites in L band up to 240k symbols per second (ksps). The RFIC allows data connectivity globally in new applications and enables remote devices and sensors to be connected to the Internet of Things. The chip integrates TX and dual RX paths from digital to RF and includes a DPD algorithm for PA linearization with a feedback path.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115390458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539947
Gian Piero Gibiino, A. Santarelli, F. Filicori
A charge function identification procedure for GaN-HEMTs is proposed. This is based on a frequency-domain integration of displacement current waveforms obtained from an auxiliary model extracted from multi-bias S-parameters. The method is compared with a similar technique recently proposed, which is instead based on direct acquisitions of large-signal waveforms at the transistor ports by means of a nonlinear vector network analyzer (NVNA). Comparisons between the two approaches are provided by using a 1-mm GaN-on-SiC HEMT, leading to conclude that thermal and trap-induced dispersion on charges have an impact quantified in ∼ 4% − 18% normalized mean square error on the displacement current prediction, depending on the waveforms considered.
{"title":"A Procedure for GaN HEMT Charge Functions Extraction from Multi-Bias S-Parameters","authors":"Gian Piero Gibiino, A. Santarelli, F. Filicori","doi":"10.23919/EUMIC.2018.8539947","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539947","url":null,"abstract":"A charge function identification procedure for GaN-HEMTs is proposed. This is based on a frequency-domain integration of displacement current waveforms obtained from an auxiliary model extracted from multi-bias S-parameters. The method is compared with a similar technique recently proposed, which is instead based on direct acquisitions of large-signal waveforms at the transistor ports by means of a nonlinear vector network analyzer (NVNA). Comparisons between the two approaches are provided by using a 1-mm GaN-on-SiC HEMT, leading to conclude that thermal and trap-induced dispersion on charges have an impact quantified in ∼ 4% − 18% normalized mean square error on the displacement current prediction, depending on the waveforms considered.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125641562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539957
K. Takano, R. Dong, Sangyeop Lee, S. Amakawa, T. Yoshida, M. Fujishima
In order to realize a wideband frequency multiplier at terahertz frequencies, iterative optimization of circuit parameters is necessary. However, iterative execution of nonlinear simulation takes a prohibitively long time. We present a small-signal harmonic model, which is equivalent to using only the dominant components of a full set of X-parameters, to solve the problem. It is a simple but accurate nonlinear model suitable for obtaining the frequency response. A 300-GHz frequency doubler with an eight-stage driver amplifier is designed by using the technique. The frequency doubler is fabricated using a 40-nm CMOS process. It achieves a 3-dB bandwidth of 76 GHz from 239 to 315 GHz and a maximum output power of −10 dBm.
{"title":"A 239-315 GHz CMOS Frequency Doubler Designed by Using a Small-Signal Harmonic Model","authors":"K. Takano, R. Dong, Sangyeop Lee, S. Amakawa, T. Yoshida, M. Fujishima","doi":"10.23919/EUMIC.2018.8539957","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539957","url":null,"abstract":"In order to realize a wideband frequency multiplier at terahertz frequencies, iterative optimization of circuit parameters is necessary. However, iterative execution of nonlinear simulation takes a prohibitively long time. We present a small-signal harmonic model, which is equivalent to using only the dominant components of a full set of X-parameters, to solve the problem. It is a simple but accurate nonlinear model suitable for obtaining the frequency response. A 300-GHz frequency doubler with an eight-stage driver amplifier is designed by using the technique. The frequency doubler is fabricated using a 40-nm CMOS process. It achieves a 3-dB bandwidth of 76 GHz from 239 to 315 GHz and a maximum output power of −10 dBm.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129315323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/eumc.2018.8541777
L. Pantoli, A. Barigelli, G. Leuzzi, F. Vitulli, A. Suriani
The paper deals with the development of a state-of-the-art medium level amplifier able to combine good noise performance with a high P1dB compression point. The MMIC is realized with a balanced structure and making use of the PH25 GaAs pHEMT process provided by UMS. The balanced structure allows to achieve a gain of 19 dB with a P1dB compression point greater than 15 dBm and a noise figure of about 3 dB in a large bandwidth spanning from 26.5 GHz to 31.5 GHz. The chip has a single bias pad; the input and output bond wires are directly matched on chip, so easingenhancing the mechanical integration in the front-end.
{"title":"GaAs Balanced Amplifier for Ka-Band Space Communications System","authors":"L. Pantoli, A. Barigelli, G. Leuzzi, F. Vitulli, A. Suriani","doi":"10.23919/eumc.2018.8541777","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541777","url":null,"abstract":"The paper deals with the development of a state-of-the-art medium level amplifier able to combine good noise performance with a high P1dB compression point. The MMIC is realized with a balanced structure and making use of the PH25 GaAs pHEMT process provided by UMS. The balanced structure allows to achieve a gain of 19 dB with a P1dB compression point greater than 15 dBm and a noise figure of about 3 dB in a large bandwidth spanning from 26.5 GHz to 31.5 GHz. The chip has a single bias pad; the input and output bond wires are directly matched on chip, so easingenhancing the mechanical integration in the front-end.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130466881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/eumc.2018.8541751
E. N. Lima, Takayuki Tanaka, I. Toyoda
This paper presents an injection-locked push-push oscillator which generates the second harmonic signal in Ku-band. Two sub-oscillators operate in-phase at the same fundamental frequency in a two-wavelength ring resonator. Moreover, two external injection signals are placed on the resonator at a half-wavelength between the sub-oscillators. The oscillator does not require additional phase-shift between the injection signals, and this task is done by the resonator and the power combining circuit. The push-push principle is satisfied by synchronization due to the phase relation of the sub-oscillators and the external injection signal source. Phase noise improvement was achieved by the injection locking,
{"title":"A Ku-Band Injection-Locked Push-Push Oscillator Using Two-Wavelength Ring Resonator","authors":"E. N. Lima, Takayuki Tanaka, I. Toyoda","doi":"10.23919/eumc.2018.8541751","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541751","url":null,"abstract":"This paper presents an injection-locked push-push oscillator which generates the second harmonic signal in Ku-band. Two sub-oscillators operate in-phase at the same fundamental frequency in a two-wavelength ring resonator. Moreover, two external injection signals are placed on the resonator at a half-wavelength between the sub-oscillators. The oscillator does not require additional phase-shift between the injection signals, and this task is done by the resonator and the power combining circuit. The push-push principle is satisfied by synchronization due to the phase relation of the sub-oscillators and the external injection signal source. Phase noise improvement was achieved by the injection locking,","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"78 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127112866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539960
C. Wilson, J. King
In this paper an experiment has been carried out, in MATLAB, where measured S-parameters from a 10W MACOM wafer device have been fit using an equivalent circuit model. The extracted intrinsic element values aim to keep the modelled and measured results in good agreement with one another while ensuring capacitance values do not break the principles of charge conservation. The model has been verified using measured S-parameters taken over a wide bias plane as well as at frequencies ranging up to 10GHz. The results from our experiment shows an accurate intrinsic model with smooth realistic capacitances between the gate-source and gate-drain terminals while ensuring charge conservation.
{"title":"Ensuring Charge Conservation in GaN HEMT Large Signal Model","authors":"C. Wilson, J. King","doi":"10.23919/EUMIC.2018.8539960","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539960","url":null,"abstract":"In this paper an experiment has been carried out, in MATLAB, where measured S-parameters from a 10W MACOM wafer device have been fit using an equivalent circuit model. The extracted intrinsic element values aim to keep the modelled and measured results in good agreement with one another while ensuring capacitance values do not break the principles of charge conservation. The model has been verified using measured S-parameters taken over a wide bias plane as well as at frequencies ranging up to 10GHz. The results from our experiment shows an accurate intrinsic model with smooth realistic capacitances between the gate-source and gate-drain terminals while ensuring charge conservation.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128397045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/eumc.2018.8541776
H. Ikeuchi, T. Kawaguchi, N. Shiokawa, Y. Sawahara, H. Kayano
We have developed an X-band low noise figure (NF) T/R switch-module using a superconducting T/R switch. The superconducting T/R switch was realized by combining a six-port network, two impedance transformers and two varactor diodes. The six-port network consists of oneλ/4 transmission line, two λ/2 transmission lines and one 3λ/4 transmission line. For each λ/2 transmission line, a single varactor diode was connected to the center of a given λ/2 transmission line by using one of the aforementioned impedance transformers. The superconducting T/R switch was fabricated using a high-Tc superconducting material called YBCO. An insertion loss of 0.3 dB was measured in Rx mode. By combining the superconducting T/R switch with a limiter and a low noise amplifier (LNA), a low NF T/R switch-module was designed. Measurements performed at X-band show an NF of 0.7 dB, which confirms the design procedure of a low NF T/R switch-module.
{"title":"X-Band Low Noise Figure T/R Switch-Module Using a Superconducting T/R Switch","authors":"H. Ikeuchi, T. Kawaguchi, N. Shiokawa, Y. Sawahara, H. Kayano","doi":"10.23919/eumc.2018.8541776","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541776","url":null,"abstract":"We have developed an X-band low noise figure (NF) T/R switch-module using a superconducting T/R switch. The superconducting T/R switch was realized by combining a six-port network, two impedance transformers and two varactor diodes. The six-port network consists of oneλ/4 transmission line, two λ/2 transmission lines and one 3λ/4 transmission line. For each λ/2 transmission line, a single varactor diode was connected to the center of a given λ/2 transmission line by using one of the aforementioned impedance transformers. The superconducting T/R switch was fabricated using a high-Tc superconducting material called YBCO. An insertion loss of 0.3 dB was measured in Rx mode. By combining the superconducting T/R switch with a limiter and a low noise amplifier (LNA), a low NF T/R switch-module was designed. Measurements performed at X-band show an NF of 0.7 dB, which confirms the design procedure of a low NF T/R switch-module.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128949187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539888
Arrnagan Gurdal, Burak Alptug Yilmaz, O. Cengiz, O. Sen, E. Ozbay
An X-Band Monolithic Microwave Integrated Circuit (MMIC) High Power Amplifier (HPA) with coplanar waveguide (CPW) based on AlGaN/GaN on SiC technology is presented in this paper. Coplanar waveguide technology (CPW) is chosen for the simplicity and reduced cost of fabrication since CPW process has no via. High Electron Mobility Transistors (HEMTs) are matched for the 8 GHz-8.4GHz frequency band for maximum output power. The Amplifier has a small signal gain over 10 dB, output power of 36.5dBm at 1 dB gain compression point (P1dB) and 40% power added efficiency (PAE) at (PldB) in the desired frequency band (8 GHz-8.4 GHz) with Vds = 30V.
{"title":"X Band GaN Based MMIC Power Amplifier with 36.5dBm P1-dB for Space Applications","authors":"Arrnagan Gurdal, Burak Alptug Yilmaz, O. Cengiz, O. Sen, E. Ozbay","doi":"10.23919/EUMIC.2018.8539888","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539888","url":null,"abstract":"An X-Band Monolithic Microwave Integrated Circuit (MMIC) High Power Amplifier (HPA) with coplanar waveguide (CPW) based on AlGaN/GaN on SiC technology is presented in this paper. Coplanar waveguide technology (CPW) is chosen for the simplicity and reduced cost of fabrication since CPW process has no via. High Electron Mobility Transistors (HEMTs) are matched for the 8 GHz-8.4GHz frequency band for maximum output power. The Amplifier has a small signal gain over 10 dB, output power of 36.5dBm at 1 dB gain compression point (P1dB) and 40% power added efficiency (PAE) at (PldB) in the desired frequency band (8 GHz-8.4 GHz) with Vds = 30V.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114265791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539904
S. Theeuwen, H. Mollee, R. Heeres, F. van Rijs
We show the capability of LDMOS technology for power amplifiers at frequencies up to 12 GHz. The frequency roll-off of the RF parameters is presented for the several LDMOS nodes (12V, 30V, 50V). Spectacularly high RF performance is measured by using on-wafer load pull for 4mm structures made in LDMOS 30V node. At 12 GHz, we measure a 35% drain efficiency, 10 dB gain and 1.0W/mm power density. Furthermore at 5 GHz, this on wafer LDMOS has about 63% drain efficiency, 19 dB gain and 1.4 W/mm, showing that LDMOS is capable of serving 5–12 GHz applications. As a demonstrator, we show the first packaged C-band LDMOS amplifier with more than 20W output power and an efficiency of 50–51 % over the band in combination with 15–16 dB maximum linear gain.
{"title":"LDMOS Technology for Power Amplifiers Up to 12 GHz","authors":"S. Theeuwen, H. Mollee, R. Heeres, F. van Rijs","doi":"10.23919/EUMIC.2018.8539904","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539904","url":null,"abstract":"We show the capability of LDMOS technology for power amplifiers at frequencies up to 12 GHz. The frequency roll-off of the RF parameters is presented for the several LDMOS nodes (12V, 30V, 50V). Spectacularly high RF performance is measured by using on-wafer load pull for 4mm structures made in LDMOS 30V node. At 12 GHz, we measure a 35% drain efficiency, 10 dB gain and 1.0W/mm power density. Furthermore at 5 GHz, this on wafer LDMOS has about 63% drain efficiency, 19 dB gain and 1.4 W/mm, showing that LDMOS is capable of serving 5–12 GHz applications. As a demonstrator, we show the first packaged C-band LDMOS amplifier with more than 20W output power and an efficiency of 50–51 % over the band in combination with 15–16 dB maximum linear gain.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121410845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539958
M. Ko, Mohamed Hussein Eissa, J. Borngräber, A. Çağrı Ulusoy, D. Kissinger
This paper proposes a compact and efficient frequency quadrupler based on a single Gilbert cell which converts 30 GHz input frequency directly into 120 GHz. It consists of a spiral Marchand edge coupled input balun, a Gilbert cell based quadrupler core and an output buffer. The Gilbert cell core, which is conventionally utilized as a doubler, is utilized here as a quadrupler to generate strong fourth harmonic by maximizing the nonlinearity of the transconductance stage in order to mix the third harmonic with the fundamental component in the switching quad. The usage of single stage multiplication enables to achieve high power efficiency and wide bandwidth. The circuit implemented in 0.13μm SiGe BiCMOS achieves an output power of 2.7 dBm at 120 GHz with a 3-dB bandwidth of 25 GHz and a power efficiency of 4.1 %. Spurious rejection is better than 30 dBc at the output frequency of 120 GHz. The circuit occupies a silicon area of 0.42 mm2.
{"title":"110–135 GHz SiGe BiCMOS Frequency Quadrupler Based on a Single Gilbert Cell","authors":"M. Ko, Mohamed Hussein Eissa, J. Borngräber, A. Çağrı Ulusoy, D. Kissinger","doi":"10.23919/EUMIC.2018.8539958","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539958","url":null,"abstract":"This paper proposes a compact and efficient frequency quadrupler based on a single Gilbert cell which converts 30 GHz input frequency directly into 120 GHz. It consists of a spiral Marchand edge coupled input balun, a Gilbert cell based quadrupler core and an output buffer. The Gilbert cell core, which is conventionally utilized as a doubler, is utilized here as a quadrupler to generate strong fourth harmonic by maximizing the nonlinearity of the transconductance stage in order to mix the third harmonic with the fundamental component in the switching quad. The usage of single stage multiplication enables to achieve high power efficiency and wide bandwidth. The circuit implemented in 0.13μm SiGe BiCMOS achieves an output power of 2.7 dBm at 120 GHz with a 3-dB bandwidth of 25 GHz and a power efficiency of 4.1 %. Spurious rejection is better than 30 dBc at the output frequency of 120 GHz. The circuit occupies a silicon area of 0.42 mm2.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"2017 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115223879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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