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2018 13th European Microwave Integrated Circuits Conference (EuMIC)最新文献

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A Highly Integrated Transceiver for Mobile Satellite Services User Terminals Incorporating Dual Receivers for Satellite Handover and Digital Pre-Distortion for PA Linearization on 0.18μm CMOS 基于0.18μm CMOS的高集成度移动卫星业务用户终端收发器,包含用于卫星切换的双接收器和用于PA线性化的数字预失真
Pub Date : 2018-09-01 DOI: 10.23919/EUMIC.2018.8539873
C. O'Sullivan, Chris Campbell, Maeve Colbert, Darren Collins, Patrick Kelleher, Krzystof Niewiadomski, F. Pini, Jan Pleskac, Tim O'Connor, Jerry O'Mahony, Paddy O'Reilly, K. O'Sullivan
This paper describes the first single chip transceiver for Mobile Satellite Services that does not require external mixers, LNA or IF filter. The IC supports LEO satellite constellations including those using small satellites in L band up to 240k symbols per second (ksps). The RFIC allows data connectivity globally in new applications and enables remote devices and sensors to be connected to the Internet of Things. The chip integrates TX and dual RX paths from digital to RF and includes a DPD algorithm for PA linearization with a feedback path.
本文描述了第一个用于移动卫星业务的单芯片收发器,它不需要外部混频器,LNA或中频滤波器。该集成电路支持低轨道卫星星座,包括使用L波段小卫星的星座,最高可达每秒240k个符号(ksps)。RFIC允许在新应用中实现全球数据连接,并使远程设备和传感器能够连接到物联网。该芯片集成了从数字到射频的TX和双RX路径,并包括用于PA线性化的DPD算法和反馈路径。
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引用次数: 0
A Ku-Band Injection-Locked Push-Push Oscillator Using Two-Wavelength Ring Resonator 基于双波长环形谐振腔的ku波段注入锁定推推振荡器
Pub Date : 2018-09-01 DOI: 10.23919/eumc.2018.8541751
E. N. Lima, Takayuki Tanaka, I. Toyoda
This paper presents an injection-locked push-push oscillator which generates the second harmonic signal in Ku-band. Two sub-oscillators operate in-phase at the same fundamental frequency in a two-wavelength ring resonator. Moreover, two external injection signals are placed on the resonator at a half-wavelength between the sub-oscillators. The oscillator does not require additional phase-shift between the injection signals, and this task is done by the resonator and the power combining circuit. The push-push principle is satisfied by synchronization due to the phase relation of the sub-oscillators and the external injection signal source. Phase noise improvement was achieved by the injection locking,
本文提出了一种能产生ku波段二次谐波信号的注入锁定推推振荡器。在双波长环形谐振器中,两个子振荡器以相同的基频同相工作。此外,在子振荡器之间的半波长处放置两个外部注入信号在谐振器上。振荡器不需要在注入信号之间额外的相移,这项任务由谐振器和功率组合电路完成。由于子振荡器与外部注入信号源的相位关系,同步满足推-推原理。通过注入锁定实现了相位噪声的改善;
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引用次数: 0
A Procedure for GaN HEMT Charge Functions Extraction from Multi-Bias S-Parameters 基于多偏置s参数的GaN HEMT电荷函数提取方法
Pub Date : 2018-09-01 DOI: 10.23919/EUMIC.2018.8539947
Gian Piero Gibiino, A. Santarelli, F. Filicori
A charge function identification procedure for GaN-HEMTs is proposed. This is based on a frequency-domain integration of displacement current waveforms obtained from an auxiliary model extracted from multi-bias S-parameters. The method is compared with a similar technique recently proposed, which is instead based on direct acquisitions of large-signal waveforms at the transistor ports by means of a nonlinear vector network analyzer (NVNA). Comparisons between the two approaches are provided by using a 1-mm GaN-on-SiC HEMT, leading to conclude that thermal and trap-induced dispersion on charges have an impact quantified in ∼ 4% − 18% normalized mean square error on the displacement current prediction, depending on the waveforms considered.
提出了一种gan - hemt的电荷函数识别方法。这是基于从多偏置s参数提取的辅助模型获得的位移电流波形的频域积分。该方法与最近提出的一种类似技术进行了比较,该技术是基于非线性矢量网络分析仪(NVNA)在晶体管端口直接采集大信号波形。通过使用1mm的GaN-on-SiC HEMT,对两种方法进行了比较,得出结论:电荷上的热和阱诱导色散对位移电流预测的影响量化为~ 4% - 18%的归一化均方误差,具体取决于所考虑的波形。
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引用次数: 2
A 239-315 GHz CMOS Frequency Doubler Designed by Using a Small-Signal Harmonic Model 基于小信号谐波模型的239-315 GHz CMOS倍频器设计
Pub Date : 2018-09-01 DOI: 10.23919/EUMIC.2018.8539957
K. Takano, R. Dong, Sangyeop Lee, S. Amakawa, T. Yoshida, M. Fujishima
In order to realize a wideband frequency multiplier at terahertz frequencies, iterative optimization of circuit parameters is necessary. However, iterative execution of nonlinear simulation takes a prohibitively long time. We present a small-signal harmonic model, which is equivalent to using only the dominant components of a full set of X-parameters, to solve the problem. It is a simple but accurate nonlinear model suitable for obtaining the frequency response. A 300-GHz frequency doubler with an eight-stage driver amplifier is designed by using the technique. The frequency doubler is fabricated using a 40-nm CMOS process. It achieves a 3-dB bandwidth of 76 GHz from 239 to 315 GHz and a maximum output power of −10 dBm.
为了实现太赫兹频率下的宽带倍频器,需要对电路参数进行迭代优化。然而,非线性仿真的迭代执行需要非常长的时间。我们提出了一个小信号谐波模型,它相当于只使用一组x参数的主导分量来解决这个问题。这是一个简单而准确的非线性模型,适合于获得频率响应。利用该技术设计了带8级驱动放大器的300ghz倍频器。该倍频器采用40纳米CMOS工艺制造。在239 ~ 315 GHz范围内实现76ghz的3db带宽,最大输出功率为−10dbm。
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引用次数: 2
GaAs Balanced Amplifier for Ka-Band Space Communications System ka波段空间通信系统中的砷化镓平衡放大器
Pub Date : 2018-09-01 DOI: 10.23919/eumc.2018.8541777
L. Pantoli, A. Barigelli, G. Leuzzi, F. Vitulli, A. Suriani
The paper deals with the development of a state-of-the-art medium level amplifier able to combine good noise performance with a high P1dB compression point. The MMIC is realized with a balanced structure and making use of the PH25 GaAs pHEMT process provided by UMS. The balanced structure allows to achieve a gain of 19 dB with a P1dB compression point greater than 15 dBm and a noise figure of about 3 dB in a large bandwidth spanning from 26.5 GHz to 31.5 GHz. The chip has a single bias pad; the input and output bond wires are directly matched on chip, so easingenhancing the mechanical integration in the front-end.
本文讨论了一种能够将良好的噪声性能与高P1dB压缩点相结合的最先进的中电平放大器的开发。MMIC采用平衡结构,利用UMS提供的PH25 GaAs pHEMT工艺实现。在26.5 GHz至31.5 GHz的大带宽范围内,平衡结构允许实现19 dB的增益,P1dB压缩点大于15 dBm,噪声系数约为3 dB。该芯片具有单个偏置垫;输入输出键合线直接在芯片上匹配,增强了前端的机械集成度。
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引用次数: 0
X Band GaN Based MMIC Power Amplifier with 36.5dBm P1-dB for Space Applications 用于空间应用的36.5dBm P1-dB X波段GaN基MMIC功率放大器
Pub Date : 2018-09-01 DOI: 10.23919/EUMIC.2018.8539888
Arrnagan Gurdal, Burak Alptug Yilmaz, O. Cengiz, O. Sen, E. Ozbay
An X-Band Monolithic Microwave Integrated Circuit (MMIC) High Power Amplifier (HPA) with coplanar waveguide (CPW) based on AlGaN/GaN on SiC technology is presented in this paper. Coplanar waveguide technology (CPW) is chosen for the simplicity and reduced cost of fabrication since CPW process has no via. High Electron Mobility Transistors (HEMTs) are matched for the 8 GHz-8.4GHz frequency band for maximum output power. The Amplifier has a small signal gain over 10 dB, output power of 36.5dBm at 1 dB gain compression point (P1dB) and 40% power added efficiency (PAE) at (PldB) in the desired frequency band (8 GHz-8.4 GHz) with Vds = 30V.
提出了一种基于SiC技术的AlGaN/GaN共面波导的x波段单片微波集成电路(MMIC)高功率放大器。选择共面波导技术(CPW)是因为其工艺简单且成本低,因为共面波导工艺没有通孔。高电子迁移率晶体管(hemt)匹配于8ghz -8.4 ghz频段,以获得最大输出功率。该放大器具有10 dB以上的小信号增益,在1dB增益压缩点(P1dB)输出功率为36.5dBm,在Vds = 30V的期望频段(8ghz -8.4 GHz),在(PldB)处功率增加效率(PAE)为40%。
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引用次数: 2
X-Band GaAs Phase Driver MMIC Optimized for GaN-Based Phased-Array Radar Transmit Chain 基于gan的相控阵雷达发射链优化的x波段GaAs相位驱动MMIC
Pub Date : 2018-09-01 DOI: 10.23919/EUMIC.2018.8539936
M. van Heijningen, J. Essing, F. V. van Vliet
In the transmit chain of high-power phased-array radars more and more use is made of Gallium-Nitride (GaN) high-power amplifiers (HPAs), while in the receive chain there is a trend to move to integrated silicon (Si) based components. The GaN amplifiers usually require a relatively high input power, making it necessary to include a medium power driver amplifier. For phased-array operation also a phase shifter in the transmit chain is required. In this paper the design and measurement results of an integrated phase-shifter-driver MMIC are presented, which has been optimized to directly drive an X-band GaN HP A. This Gallium-Arsenide (GaAs) MMIC has been designed to fit in a low-cost plastic QFN package to reduce the cost of the front-end module assembly. The realized QFN-packaged MMIC features a 6-bit digital phase shifter and a CW output power of more than 22 dBm at a source power of 5 dBm, from 8 to 11 GHz. Over this bandwidth the measured RMS phase error is less than 5°.
在大功率相控阵雷达的发射链中越来越多地使用氮化镓(GaN)大功率放大器,而在接收链中则有向集成硅(Si)基器件发展的趋势。氮化镓放大器通常需要一个相对较高的输入功率,使得它有必要包括一个中等功率的驱动放大器。对于相控阵操作,在发射链中也需要一个移相器。本文介绍了一种集成移相驱动器MMIC的设计和测量结果,该MMIC经过优化,可直接驱动x波段GaN HP a。这种砷化镓(GaAs) MMIC被设计成适合低成本的塑料QFN封装,以降低前端模块组装的成本。所实现的qfn封装MMIC具有6位数字移相器,源功率为5 dBm,连续波输出功率超过22 dBm,范围为8至11 GHz。在此带宽范围内,测量的均方根相位误差小于5°。
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引用次数: 0
Characterization of Flex to Printed Circuit Board Interconnections Using Insertion Connectors 使用插入连接器的柔性与印刷电路板互连的特性
Pub Date : 2018-09-01 DOI: 10.23919/EUMIC.2018.8539870
C. Person, D. Nguyen, J. Coupez, P. Minard, D. L. Tong, P. Borel, D. Izoard
Advanced internet and multimedia set-top boxes are today massively based on 4*4 MIMO systems, with multi-sub-bands standards (WIFI bands, LTE, Bluetooth, …). Interconnections between the numerous access ports of different radio chipsets mounted on a main PCB (Printed Circuit Board) and multiple antennas spatially distributed on the plastic casing become therefore a great challenge for cost and performances motivations. The flex technology, based on well-controlled and low cost process, brings new functionalities and opportunities for assembling sub-systems, under compactness considerations, as well as electrical performances improvement. In this paper, we discuss about the characterisation of connectors used for flexible printed circuit to a main PCB interconnections. The choice of the connectors is a critical issue, and must be properly done considering both local ground and signal interconnections constraints. Simulation and measurements are performed up to 15Ghz covering WIFI bands
今天,先进的互联网和多媒体机顶盒大量基于4*4 MIMO系统,具有多子频段标准(WIFI频段,LTE,蓝牙等)。因此,安装在主PCB(印刷电路板)上的不同无线电芯片组的众多接入端口之间的互连以及空间上分布在塑料外壳上的多个天线之间的互连成为成本和性能动机的巨大挑战。基于良好控制和低成本工艺的柔性技术,在考虑紧凑性和电气性能改善的情况下,为装配子系统带来了新的功能和机会。本文讨论了用于柔性印刷电路与主PCB互连的连接器的特性。连接器的选择是一个关键问题,必须考虑到本地接地和信号互连的限制。模拟和测量在15Ghz范围内进行,覆盖WIFI频段
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引用次数: 0
Ensuring Charge Conservation in GaN HEMT Large Signal Model 保证GaN HEMT大信号模型中的电荷守恒
Pub Date : 2018-09-01 DOI: 10.23919/EUMIC.2018.8539960
C. Wilson, J. King
In this paper an experiment has been carried out, in MATLAB, where measured S-parameters from a 10W MACOM wafer device have been fit using an equivalent circuit model. The extracted intrinsic element values aim to keep the modelled and measured results in good agreement with one another while ensuring capacitance values do not break the principles of charge conservation. The model has been verified using measured S-parameters taken over a wide bias plane as well as at frequencies ranging up to 10GHz. The results from our experiment shows an accurate intrinsic model with smooth realistic capacitances between the gate-source and gate-drain terminals while ensuring charge conservation.
本文在MATLAB中进行了实验,其中使用等效电路模型拟合了10W MACOM晶圆器件的测量s参数。在保证电容值不违背电荷守恒原理的同时,所提取的本征元素值的目的是使模拟结果和测量结果保持良好的一致性。该模型已通过在宽偏置平面上以及高达10GHz的频率范围内测量的s参数进行验证。实验结果表明,在保证电荷守恒的情况下,栅极源端和栅极漏端之间具有光滑的真实电容的精确的本征模型。
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引用次数: 5
X-Band Low Noise Figure T/R Switch-Module Using a Superconducting T/R Switch 采用超导T/R开关的x波段低噪声图T/R开关模块
Pub Date : 2018-09-01 DOI: 10.23919/eumc.2018.8541776
H. Ikeuchi, T. Kawaguchi, N. Shiokawa, Y. Sawahara, H. Kayano
We have developed an X-band low noise figure (NF) T/R switch-module using a superconducting T/R switch. The superconducting T/R switch was realized by combining a six-port network, two impedance transformers and two varactor diodes. The six-port network consists of oneλ/4 transmission line, two λ/2 transmission lines and one 3λ/4 transmission line. For each λ/2 transmission line, a single varactor diode was connected to the center of a given λ/2 transmission line by using one of the aforementioned impedance transformers. The superconducting T/R switch was fabricated using a high-Tc superconducting material called YBCO. An insertion loss of 0.3 dB was measured in Rx mode. By combining the superconducting T/R switch with a limiter and a low noise amplifier (LNA), a low NF T/R switch-module was designed. Measurements performed at X-band show an NF of 0.7 dB, which confirms the design procedure of a low NF T/R switch-module.
我们利用超导T/R开关开发了一种x波段低噪声系数(NF) T/R开关模块。超导收发开关由一个六端口网络、两个阻抗互感器和两个变容二极管组成。六端口网络由一条λ/4传输线、两条λ/2传输线和一条3λ/4传输线组成。对于每条λ/2传输线,一个变容二极管通过使用上述阻抗变压器之一连接到给定λ/2传输线的中心。超导T/R开关是用高tc超导材料YBCO制造的。在Rx模式下测量到0.3 dB的插入损耗。将超导T/R开关与限幅器和低噪声放大器(LNA)相结合,设计了一个低NF T/R开关模块。在x波段进行的测量显示NF为0.7 dB,这证实了低NF T/R开关模块的设计过程。
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引用次数: 1
期刊
2018 13th European Microwave Integrated Circuits Conference (EuMIC)
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