Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539865
Christopher M. Grӧtsch, S. Wagner, A. Leuther, D. Meier, I. Kallfass
Two H-band frequency multiplier MMICs, a frequency doubler and tripler, are presented. Both circuits were characterized over a frequency range of 235 − 285 GHz. The 3-dB bandwidth of both chips exceeds the measurement range of 50 GHz. Without any post-amplification the multiplier-by-3 achieves an average output power of −6 dBm at an input power of 6 dBm. The multiplier-by-two generates −3.6 dBm average at an input power of 5 dBm. Both MMICs were realized in a 35 nm gate-length InGaAs-based metamorphic HEMT technology. A comparison of simulation and measurement was conducted and shows a very good correspondence.
{"title":"Ultra-Broadband Frequency Multiplier MMICs for Communication and Radar Applications","authors":"Christopher M. Grӧtsch, S. Wagner, A. Leuther, D. Meier, I. Kallfass","doi":"10.23919/EUMIC.2018.8539865","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539865","url":null,"abstract":"Two H-band frequency multiplier MMICs, a frequency doubler and tripler, are presented. Both circuits were characterized over a frequency range of 235 − 285 GHz. The 3-dB bandwidth of both chips exceeds the measurement range of 50 GHz. Without any post-amplification the multiplier-by-3 achieves an average output power of −6 dBm at an input power of 6 dBm. The multiplier-by-two generates −3.6 dBm average at an input power of 5 dBm. Both MMICs were realized in a 35 nm gate-length InGaAs-based metamorphic HEMT technology. A comparison of simulation and measurement was conducted and shows a very good correspondence.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116856336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/eumc.2018.8541519
Paul Stärke, D. Fritsche, C. Carta, F. Ellinger
This work presents the application of vertical solderless coaxial connectors for the 2.92 mm and 1.85 mm standards operating up to 67 GHz. Optimized PCB footprints are designed to minimize the interface reflections in conjunction with a widely available RF substrate. A return loss above 20 dB up to 30 GHz for the 2.92 mm connector and above 15 dB up to 60 GHz for the 1.85 mm connector is achieved. The de-embedded insertion loss per connector does not exceed 0.5 dB at 40 GHz and 0.75 dB at 67 GHz, respectively. A differential wideband amplifier and an ultra-wideband antenna are packaged and measured as practical demonstration, showing only a slight decrease in performance over the full bandwidth of interest.
{"title":"Optimization of PCB Transitions for Vertical Solderless Coaxial Connectors up to 67 GHz","authors":"Paul Stärke, D. Fritsche, C. Carta, F. Ellinger","doi":"10.23919/eumc.2018.8541519","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541519","url":null,"abstract":"This work presents the application of vertical solderless coaxial connectors for the 2.92 mm and 1.85 mm standards operating up to 67 GHz. Optimized PCB footprints are designed to minimize the interface reflections in conjunction with a widely available RF substrate. A return loss above 20 dB up to 30 GHz for the 2.92 mm connector and above 15 dB up to 60 GHz for the 1.85 mm connector is achieved. The de-embedded insertion loss per connector does not exceed 0.5 dB at 40 GHz and 0.75 dB at 67 GHz, respectively. A differential wideband amplifier and an ultra-wideband antenna are packaged and measured as practical demonstration, showing only a slight decrease in performance over the full bandwidth of interest.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115241068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/eumic.2018.8539916
Jaime Casanueva Pérez, Amparo Herrera Guardado, Javier Cabo Freixedas, Juan Carlos Pérez Ambrojo
This paper presents a wideband voltage-controlled oscillator (VCO) using hybrid technology based on bipolar transistors for a new generation TTC Transponder. The VCO is based on microstrip three-pole combline bandpass filter with just one varactor diode. The bandpass filter is embedded into the feed-back loop to treat as a frequency stabilization element. The VCO delivered 4.63 dBm maximum output power at 3.4 GHz with a current consumption of 17.4 mA for a supply voltage of 3 V and it has a tuning range achieved from 600 MHz being the frequency range from 2.8 GHz to 3.4 GHz. The developed VCO with three pole combline filter is experimentally demonstrated at 3.4 GHz with a phase noise of − 126 dBc/Hz at 1 MHz offset frequency. In addition, over this frequency range, all the phase noises measured at 1 MHz are better than −118 dBc/Hz.
{"title":"A Hybrid Bipolar Wideband VCO with Linearized Tuning Behaviour for a New Generation TTC Transponder","authors":"Jaime Casanueva Pérez, Amparo Herrera Guardado, Javier Cabo Freixedas, Juan Carlos Pérez Ambrojo","doi":"10.23919/eumic.2018.8539916","DOIUrl":"https://doi.org/10.23919/eumic.2018.8539916","url":null,"abstract":"This paper presents a wideband voltage-controlled oscillator (VCO) using hybrid technology based on bipolar transistors for a new generation TTC Transponder. The VCO is based on microstrip three-pole combline bandpass filter with just one varactor diode. The bandpass filter is embedded into the feed-back loop to treat as a frequency stabilization element. The VCO delivered 4.63 dBm maximum output power at 3.4 GHz with a current consumption of 17.4 mA for a supply voltage of 3 V and it has a tuning range achieved from 600 MHz being the frequency range from 2.8 GHz to 3.4 GHz. The developed VCO with three pole combline filter is experimentally demonstrated at 3.4 GHz with a phase noise of − 126 dBc/Hz at 1 MHz offset frequency. In addition, over this frequency range, all the phase noises measured at 1 MHz are better than −118 dBc/Hz.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129419141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539946
Xuekun Du, S. Dhar, A. Jarndal, C. Storey, M. Helaoui, S. Wingar, Chang Jiang You, Jingye Cai, F. Ghannouchi
A novel reliable small signal model parameter extraction of asymmetric GaN-based Heterojunction Field Effect Transistors (HFETs) is proposed in this paper. An efficient systematic searching procedure based on pinch-off and cold weak-forward S-parameters has been developed to consider the asymmetric structure of GaN HFETs and find the optimal values of the gate and drain pad capacitances $C_{pg}$ and $C_{pd}$. Considering that the depletion region extension is varied with the gate bias voltage Vgs slightly even below pinch-off voltage, the obtained initial values of the extracted parameters are optimized by artificial bee colony (ABC) algorithm to improve the reliability of parameter extraction. The developed parameter extraction method shows excellent accuracy and reliability. The proposed procedure can be extended to asymmetric GaN devices with various process technologies. The developed approach has been validated by an asymmetric $0.15 mu mathrm{m}$ GaN HFET over a wide range of bias conditions and frequencies.
提出了一种可靠的非对称氮化镓异质结场效应晶体管(hfet)小信号模型参数提取方法。针对GaN型hfet的非对称结构，提出了一种基于掐断和冷弱正向s参数的高效系统搜索方法，并找到了栅极和漏极电容C_{pg}$和C_{pd}$的最优值。考虑到耗尽区扩展随栅极偏置电压Vgs的变化不大，甚至小于截断电压，采用人工蜂群(ABC)算法对提取参数的初始值进行优化，提高参数提取的可靠性。所开发的参数提取方法具有良好的准确性和可靠性。所提出的程序可以扩展到具有各种工艺技术的非对称GaN器件。所开发的方法已通过一个非对称的$0.15 mu mathm {m}$ GaN HFET在宽偏置条件和频率范围内进行了验证。
{"title":"Reliable Parameter Extraction of Asymmetric GaN-Based Heterojunction Field Effect Transistors","authors":"Xuekun Du, S. Dhar, A. Jarndal, C. Storey, M. Helaoui, S. Wingar, Chang Jiang You, Jingye Cai, F. Ghannouchi","doi":"10.23919/EUMIC.2018.8539946","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539946","url":null,"abstract":"A novel reliable small signal model parameter extraction of asymmetric GaN-based Heterojunction Field Effect Transistors (HFETs) is proposed in this paper. An efficient systematic searching procedure based on pinch-off and cold weak-forward S-parameters has been developed to consider the asymmetric structure of GaN HFETs and find the optimal values of the gate and drain pad capacitances $C_{pg}$ and $C_{pd}$. Considering that the depletion region extension is varied with the gate bias voltage Vgs slightly even below pinch-off voltage, the obtained initial values of the extracted parameters are optimized by artificial bee colony (ABC) algorithm to improve the reliability of parameter extraction. The developed parameter extraction method shows excellent accuracy and reliability. The proposed procedure can be extended to asymmetric GaN devices with various process technologies. The developed approach has been validated by an asymmetric $0.15 mu mathrm{m}$ GaN HFET over a wide range of bias conditions and frequencies.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125989881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539903
J. Kamioka, Yoshifumi Kawamura, Y. Tarui, K. Nakahara, Y. Kamo, H. Okazaki, M. Hangai, K. Yamanaka, H. Fukumoto
In this paper, a high output power and high gain X-band GaN-on-Si MMIC power amplifier with a GaAs MMIC output matching circuit is developed to achieve a low-cost and miniaturized module. A GaAs MMIC output matching circuit is employed to reduce circuit loss. Measured performance of the developed amplifier shows output power of 44.8 dBm (30.4 W), associated gain of 29.8 dB and PAE of 30 % in X-band. The developed amplifier achieves the highest output power, gain and PAE among X-band GaN-on-Si amplifiers ever reported. The developed amplifier is estimated to be less than half the cost of GaN-on-SiC amplifiers of the same size.
{"title":"A Low-Cost 30-W Class X-Band GaN-on-Si MMIC Power Amplifier with a GaAs MMIC Output Matching Circuit","authors":"J. Kamioka, Yoshifumi Kawamura, Y. Tarui, K. Nakahara, Y. Kamo, H. Okazaki, M. Hangai, K. Yamanaka, H. Fukumoto","doi":"10.23919/EUMIC.2018.8539903","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539903","url":null,"abstract":"In this paper, a high output power and high gain X-band GaN-on-Si MMIC power amplifier with a GaAs MMIC output matching circuit is developed to achieve a low-cost and miniaturized module. A GaAs MMIC output matching circuit is employed to reduce circuit loss. Measured performance of the developed amplifier shows output power of 44.8 dBm (30.4 W), associated gain of 29.8 dB and PAE of 30 % in X-band. The developed amplifier achieves the highest output power, gain and PAE among X-band GaN-on-Si amplifiers ever reported. The developed amplifier is estimated to be less than half the cost of GaN-on-SiC amplifiers of the same size.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122271910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539919
D. Saugnon, J. Tartarin, B. Franc, Hassan Maher, Francois Boone
The rapid development of III-V technologies for telecommunication and radar markets need the meeting of performances (power, frequency) criteria as well as reliability assessment. Nitride HEMT technologies are known to reveal a large variety of failure electrical signatures, and it is also largely accepted that multi-tools (multi physics) approaches is the only suitable way to understand the failure mechanisms and to improve the technologies. Experimental stress workbenches usually allow to track a given number of static/dynamic parameters, but specific characterization are only performed at initial and final steps on the devices. This paper proposes a new approach with S-parameters measurement performed during RF stresses without removing the devices under test (in a thermally controlled oven). Then intermediate knowledge of the electrical (small signal) behavior of the devices can be assessed, and crossed with large-signal and static time-dependent signatures.
{"title":"Fully Automated RF-Thermal Stress Workbench with S-Parameters Tracking for GaN Reliability Analysis","authors":"D. Saugnon, J. Tartarin, B. Franc, Hassan Maher, Francois Boone","doi":"10.23919/EUMIC.2018.8539919","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539919","url":null,"abstract":"The rapid development of III-V technologies for telecommunication and radar markets need the meeting of performances (power, frequency) criteria as well as reliability assessment. Nitride HEMT technologies are known to reveal a large variety of failure electrical signatures, and it is also largely accepted that multi-tools (multi physics) approaches is the only suitable way to understand the failure mechanisms and to improve the technologies. Experimental stress workbenches usually allow to track a given number of static/dynamic parameters, but specific characterization are only performed at initial and final steps on the devices. This paper proposes a new approach with S-parameters measurement performed during RF stresses without removing the devices under test (in a thermally controlled oven). Then intermediate knowledge of the electrical (small signal) behavior of the devices can be assessed, and crossed with large-signal and static time-dependent signatures.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128619849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539889
Xingli He, Ioanna Bakaimi, Nur Zatil Ismah Hashim, Yudong Wang, A. Mostaed, I. Reaney, Q. Luo, S. Gao, B. Hayden, C. H. (Kees) de Groot
BaxSr1-xTiyMn1-yO3 BSTO thin films have been synthesized using a molecular beam epitaxy system. Novel coplanar waveguide tunable phase shifters have been developed using these Mn-doped perovskite films. The presented phase shifters operate with a phase shift angle of 12 degrees at 10GHz. at an applied bias of 10V on an area smaller than 1mm2, Insertion loss of ~3.2 dB is extracted from the S-parameter measurement. Small changes of composition lead to a significant variation of device phase shift, demonstrating the importance of synthesizing suitable structure BSTO film.
{"title":"(Ba, Sr)(Ti, Mn)O3 Perovskite Films for Co-Planar Waveguide Tunable Microwave Phase Shifters","authors":"Xingli He, Ioanna Bakaimi, Nur Zatil Ismah Hashim, Yudong Wang, A. Mostaed, I. Reaney, Q. Luo, S. Gao, B. Hayden, C. H. (Kees) de Groot","doi":"10.23919/EUMIC.2018.8539889","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539889","url":null,"abstract":"BaxSr1-xTiyMn1-yO3 BSTO thin films have been synthesized using a molecular beam epitaxy system. Novel coplanar waveguide tunable phase shifters have been developed using these Mn-doped perovskite films. The presented phase shifters operate with a phase shift angle of 12 degrees at 10GHz. at an applied bias of 10V on an area smaller than 1mm2, Insertion loss of ~3.2 dB is extracted from the S-parameter measurement. Small changes of composition lead to a significant variation of device phase shift, demonstrating the importance of synthesizing suitable structure BSTO film.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134187565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539942
Cuilin Chen, T. Sugiura, T. Yoshimasu
A high efficiency linear power amplifier (PA) IC is presented for 14 GHz-band wireless communication systems. A novel adaptive bias circuit with four-stacked MOSFET structure is proposed to enhance both the linearity and efficiency of the PA IC over the wide input power range. The PA IC is designed, fabricated and fully tested in 56-nm SOI CMOS. In linear mode, the PA IC has exhibited an output P1dB of 20.1 dBm at 14 GHz and a supply voltage of 4.0 V. The measured PAE at P1dB is as high as 40.1%. Moreover, the peak PAE of 41.6% is achieved in efficient mode.
{"title":"A 14-GHz-Band Highly Linear Stacked FET Power Amplifier IC with 20.1 dBm P1dB and 40.1% PAE in 56-nm SOI CMOS","authors":"Cuilin Chen, T. Sugiura, T. Yoshimasu","doi":"10.23919/EUMIC.2018.8539942","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539942","url":null,"abstract":"A high efficiency linear power amplifier (PA) IC is presented for 14 GHz-band wireless communication systems. A novel adaptive bias circuit with four-stacked MOSFET structure is proposed to enhance both the linearity and efficiency of the PA IC over the wide input power range. The PA IC is designed, fabricated and fully tested in 56-nm SOI CMOS. In linear mode, the PA IC has exhibited an output P1dB of 20.1 dBm at 14 GHz and a supply voltage of 4.0 V. The measured PAE at P1dB is as high as 40.1%. Moreover, the peak PAE of 41.6% is achieved in efficient mode.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133797294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/eumc.2018.8541809
Oguz Kazan, F. Koçer, O. Aydin Civi
This paper presents a low-noise amplifier (LNA) operating between 8−11 GHz. Measurement results show that the LNA has a gain of more than 20 dB while achieving a noise figure of less than 2 dB. The three stage topology achieves high linearity, providing an OIP3 of 29 dBm at 0.6 W power dissipation. The robustness tests show that the circuit survives to at least 2.5 W (34 dBm) input power. With a size of just 2.8 × 1.3 mm2(3.6 mm2) the presented LNA is compact when compared to the state of the art. The circuit is realized using the 0.25 μm Power GaN/SiC HEMT process by WIN Semiconductor.
{"title":"An X-Band Robust GaN Low-Noise Amplifier MMIC with sub 2 dB Noise Figure","authors":"Oguz Kazan, F. Koçer, O. Aydin Civi","doi":"10.23919/eumc.2018.8541809","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541809","url":null,"abstract":"This paper presents a low-noise amplifier (LNA) operating between 8−11 GHz. Measurement results show that the LNA has a gain of more than 20 dB while achieving a noise figure of less than 2 dB. The three stage topology achieves high linearity, providing an OIP3 of 29 dBm at 0.6 W power dissipation. The robustness tests show that the circuit survives to at least 2.5 W (34 dBm) input power. With a size of just 2.8 × 1.3 mm2(3.6 mm2) the presented LNA is compact when compared to the state of the art. The circuit is realized using the 0.25 μm Power GaN/SiC HEMT process by WIN Semiconductor.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134007051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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