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2018 13th European Microwave Integrated Circuits Conference (EuMIC)最新文献

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Ultra-Broadband Frequency Multiplier MMICs for Communication and Radar Applications 用于通信和雷达应用的超宽带倍频mmic
Pub Date : 2018-09-01 DOI: 10.23919/EUMIC.2018.8539865
Christopher M. Grӧtsch, S. Wagner, A. Leuther, D. Meier, I. Kallfass
Two H-band frequency multiplier MMICs, a frequency doubler and tripler, are presented. Both circuits were characterized over a frequency range of 235 − 285 GHz. The 3-dB bandwidth of both chips exceeds the measurement range of 50 GHz. Without any post-amplification the multiplier-by-3 achieves an average output power of −6 dBm at an input power of 6 dBm. The multiplier-by-two generates −3.6 dBm average at an input power of 5 dBm. Both MMICs were realized in a 35 nm gate-length InGaAs-based metamorphic HEMT technology. A comparison of simulation and measurement was conducted and shows a very good correspondence.
提出了两种h波段倍频mmic,即倍频器和三倍频器。两种电路的特征都在235 - 285 GHz的频率范围内。两种芯片的3db带宽都超过了50ghz的测量范围。在没有任何后放大的情况下,乘法器在输入功率为6dbm时的平均输出功率为- 6dbm。2乘法器在输入功率为5dbm时平均产生−3.6 dBm。这两种mmic都是在35nm栅长ingaas基变质HEMT技术中实现的。仿真与实测结果进行了比较,结果表明两者吻合良好。
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引用次数: 7
Optimization of PCB Transitions for Vertical Solderless Coaxial Connectors up to 67 GHz 高达67 GHz的垂直无焊同轴连接器的PCB过渡优化
Pub Date : 2018-09-01 DOI: 10.23919/eumc.2018.8541519
Paul Stärke, D. Fritsche, C. Carta, F. Ellinger
This work presents the application of vertical solderless coaxial connectors for the 2.92 mm and 1.85 mm standards operating up to 67 GHz. Optimized PCB footprints are designed to minimize the interface reflections in conjunction with a widely available RF substrate. A return loss above 20 dB up to 30 GHz for the 2.92 mm connector and above 15 dB up to 60 GHz for the 1.85 mm connector is achieved. The de-embedded insertion loss per connector does not exceed 0.5 dB at 40 GHz and 0.75 dB at 67 GHz, respectively. A differential wideband amplifier and an ultra-wideband antenna are packaged and measured as practical demonstration, showing only a slight decrease in performance over the full bandwidth of interest.
这项工作介绍了垂直无焊同轴连接器在2.92 mm和1.85 mm标准下的应用,工作频率高达67 GHz。优化的PCB封装设计,结合广泛使用的射频基板,最大限度地减少接口反射。2.92 mm连接器的回波损耗在30ghz范围内大于20db, 1.85 mm连接器的回波损耗在60ghz范围内大于15db。每个连接器的去嵌入插入损耗在40 GHz时不超过0.5 dB,在67 GHz时不超过0.75 dB。差分宽带放大器和超宽带天线的封装和测量作为实际演示,显示只有轻微的性能下降超过感兴趣的全带宽。
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引用次数: 0
A Hybrid Bipolar Wideband VCO with Linearized Tuning Behaviour for a New Generation TTC Transponder 用于新一代TTC转发器的线性化调谐的混合双极宽带压控振荡器
Pub Date : 2018-09-01 DOI: 10.23919/eumic.2018.8539916
Jaime Casanueva Pérez, Amparo Herrera Guardado, Javier Cabo Freixedas, Juan Carlos Pérez Ambrojo
This paper presents a wideband voltage-controlled oscillator (VCO) using hybrid technology based on bipolar transistors for a new generation TTC Transponder. The VCO is based on microstrip three-pole combline bandpass filter with just one varactor diode. The bandpass filter is embedded into the feed-back loop to treat as a frequency stabilization element. The VCO delivered 4.63 dBm maximum output power at 3.4 GHz with a current consumption of 17.4 mA for a supply voltage of 3 V and it has a tuning range achieved from 600 MHz being the frequency range from 2.8 GHz to 3.4 GHz. The developed VCO with three pole combline filter is experimentally demonstrated at 3.4 GHz with a phase noise of − 126 dBc/Hz at 1 MHz offset frequency. In addition, over this frequency range, all the phase noises measured at 1 MHz are better than −118 dBc/Hz.
提出了一种基于双极晶体管混合技术的宽带压控振荡器(VCO),用于新一代TTC应答器。该压控振荡器是基于微带三极组合带通滤波器,只有一个变容二极管。带通滤波器嵌入反馈回路中,作为频率稳定元件。该VCO在3.4 GHz时提供4.63 dBm的最大输出功率,在3 V电源电压下电流消耗为17.4 mA,其调谐范围为600 MHz,即2.8 GHz至3.4 GHz的频率范围。在3.4 GHz频率下进行了三极组合滤波器压控振荡器的实验验证,在1 MHz偏置频率下相位噪声为- 126 dBc/Hz。此外,在该频率范围内,在1mhz处测量到的所有相位噪声都优于- 118 dBc/Hz。
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引用次数: 1
Reliable Parameter Extraction of Asymmetric GaN-Based Heterojunction Field Effect Transistors 非对称氮化镓异质结场效应晶体管的可靠参数提取
Pub Date : 2018-09-01 DOI: 10.23919/EUMIC.2018.8539946
Xuekun Du, S. Dhar, A. Jarndal, C. Storey, M. Helaoui, S. Wingar, Chang Jiang You, Jingye Cai, F. Ghannouchi
A novel reliable small signal model parameter extraction of asymmetric GaN-based Heterojunction Field Effect Transistors (HFETs) is proposed in this paper. An efficient systematic searching procedure based on pinch-off and cold weak-forward S-parameters has been developed to consider the asymmetric structure of GaN HFETs and find the optimal values of the gate and drain pad capacitances $C_{pg}$ and $C_{pd}$. Considering that the depletion region extension is varied with the gate bias voltage Vgs slightly even below pinch-off voltage, the obtained initial values of the extracted parameters are optimized by artificial bee colony (ABC) algorithm to improve the reliability of parameter extraction. The developed parameter extraction method shows excellent accuracy and reliability. The proposed procedure can be extended to asymmetric GaN devices with various process technologies. The developed approach has been validated by an asymmetric $0.15 mu mathrm{m}$ GaN HFET over a wide range of bias conditions and frequencies.
提出了一种可靠的非对称氮化镓异质结场效应晶体管(hfet)小信号模型参数提取方法。针对GaN型hfet的非对称结构,提出了一种基于掐断和冷弱正向s参数的高效系统搜索方法,并找到了栅极和漏极电容C_{pg}$和C_{pd}$的最优值。考虑到耗尽区扩展随栅极偏置电压Vgs的变化不大,甚至小于截断电压,采用人工蜂群(ABC)算法对提取参数的初始值进行优化,提高参数提取的可靠性。所开发的参数提取方法具有良好的准确性和可靠性。所提出的程序可以扩展到具有各种工艺技术的非对称GaN器件。所开发的方法已通过一个非对称的$0.15 mu mathm {m}$ GaN HFET在宽偏置条件和频率范围内进行了验证。
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引用次数: 6
A Low-Cost 30-W Class X-Band GaN-on-Si MMIC Power Amplifier with a GaAs MMIC Output Matching Circuit 具有GaAs MMIC输出匹配电路的低成本30w级x波段GaN-on-Si MMIC功率放大器
Pub Date : 2018-09-01 DOI: 10.23919/EUMIC.2018.8539903
J. Kamioka, Yoshifumi Kawamura, Y. Tarui, K. Nakahara, Y. Kamo, H. Okazaki, M. Hangai, K. Yamanaka, H. Fukumoto
In this paper, a high output power and high gain X-band GaN-on-Si MMIC power amplifier with a GaAs MMIC output matching circuit is developed to achieve a low-cost and miniaturized module. A GaAs MMIC output matching circuit is employed to reduce circuit loss. Measured performance of the developed amplifier shows output power of 44.8 dBm (30.4 W), associated gain of 29.8 dB and PAE of 30 % in X-band. The developed amplifier achieves the highest output power, gain and PAE among X-band GaN-on-Si amplifiers ever reported. The developed amplifier is estimated to be less than half the cost of GaN-on-SiC amplifiers of the same size.
本文设计了一种高输出功率、高增益的x波段GaN-on-Si MMIC功率放大器,并设计了GaAs MMIC输出匹配电路,实现了低成本、小型化的模块设计。采用GaAs MMIC输出匹配电路,降低了电路损耗。该放大器在x波段的输出功率为44.8 dBm (30.4 W),相关增益为29.8 dB, PAE为30%。所开发的放大器在x波段GaN-on-Si放大器中实现了最高的输出功率,增益和PAE。开发的放大器估计成本不到相同尺寸的GaN-on-SiC放大器的一半。
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引用次数: 2
Fully Automated RF-Thermal Stress Workbench with S-Parameters Tracking for GaN Reliability Analysis 具有s参数跟踪的全自动射频热应力工作台用于GaN可靠性分析
Pub Date : 2018-09-01 DOI: 10.23919/EUMIC.2018.8539919
D. Saugnon, J. Tartarin, B. Franc, Hassan Maher, Francois Boone
The rapid development of III-V technologies for telecommunication and radar markets need the meeting of performances (power, frequency) criteria as well as reliability assessment. Nitride HEMT technologies are known to reveal a large variety of failure electrical signatures, and it is also largely accepted that multi-tools (multi physics) approaches is the only suitable way to understand the failure mechanisms and to improve the technologies. Experimental stress workbenches usually allow to track a given number of static/dynamic parameters, but specific characterization are only performed at initial and final steps on the devices. This paper proposes a new approach with S-parameters measurement performed during RF stresses without removing the devices under test (in a thermally controlled oven). Then intermediate knowledge of the electrical (small signal) behavior of the devices can be assessed, and crossed with large-signal and static time-dependent signatures.
电信和雷达市场III-V技术的快速发展需要满足性能(功率、频率)标准以及可靠性评估。众所周知,氮化HEMT技术可以揭示各种各样的失效电子特征,而且人们普遍认为,多工具(多物理场)方法是理解失效机制和改进技术的唯一合适方法。实验应力工作台通常允许跟踪给定数量的静态/动态参数,但具体的表征仅在设备的初始和最后步骤进行。本文提出了一种在射频应力下进行s参数测量的新方法,而无需移除被测器件(在热控烤箱中)。然后,可以评估设备的电气(小信号)行为的中间知识,并与大信号和静态时间相关签名交叉。
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引用次数: 5
EuMW 2018
Pub Date : 2018-09-01 DOI: 10.23919/eumic.2018.8539901
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引用次数: 0
(Ba, Sr)(Ti, Mn)O3 Perovskite Films for Co-Planar Waveguide Tunable Microwave Phase Shifters 共面波导可调谐微波移相器用(Ba, Sr)(Ti, Mn)O3钙钛矿薄膜
Pub Date : 2018-09-01 DOI: 10.23919/EUMIC.2018.8539889
Xingli He, Ioanna Bakaimi, Nur Zatil Ismah Hashim, Yudong Wang, A. Mostaed, I. Reaney, Q. Luo, S. Gao, B. Hayden, C. H. (Kees) de Groot
BaxSr1-xTiyMn1-yO3 BSTO thin films have been synthesized using a molecular beam epitaxy system. Novel coplanar waveguide tunable phase shifters have been developed using these Mn-doped perovskite films. The presented phase shifters operate with a phase shift angle of 12 degrees at 10GHz. at an applied bias of 10V on an area smaller than 1mm2, Insertion loss of ~3.2 dB is extracted from the S-parameter measurement. Small changes of composition lead to a significant variation of device phase shift, demonstrating the importance of synthesizing suitable structure BSTO film.
利用分子束外延系统合成了BaxSr1-xTiyMn1-yO3 BSTO薄膜。利用这些掺杂锰的钙钛矿薄膜研制出了新型的共面波导可调谐移相器。所设计的移相器在10GHz工作时的移相角为12度。在小于1mm2的面积上施加10V偏置时,从s参数测量中提取出~3.2 dB的插入损耗。组成的微小变化会导致器件相移的显著变化,这表明合成合适结构的BSTO薄膜的重要性。
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引用次数: 2
A 14-GHz-Band Highly Linear Stacked FET Power Amplifier IC with 20.1 dBm P1dB and 40.1% PAE in 56-nm SOI CMOS 一种14 ghz频带高线性堆叠FET功率放大器IC, P1dB为20.1 dBm, PAE为40.1%,采用56纳米SOI CMOS
Pub Date : 2018-09-01 DOI: 10.23919/EUMIC.2018.8539942
Cuilin Chen, T. Sugiura, T. Yoshimasu
A high efficiency linear power amplifier (PA) IC is presented for 14 GHz-band wireless communication systems. A novel adaptive bias circuit with four-stacked MOSFET structure is proposed to enhance both the linearity and efficiency of the PA IC over the wide input power range. The PA IC is designed, fabricated and fully tested in 56-nm SOI CMOS. In linear mode, the PA IC has exhibited an output P1dB of 20.1 dBm at 14 GHz and a supply voltage of 4.0 V. The measured PAE at P1dB is as high as 40.1%. Moreover, the peak PAE of 41.6% is achieved in efficient mode.
提出了一种适用于14ghz波段无线通信系统的高效率线性功率放大器(PA)集成电路。为了在宽输入功率范围内提高压电集成电路的线性度和效率,提出了一种新型的四层MOSFET结构自适应偏置电路。该PA IC是在56纳米SOI CMOS中设计、制造和全面测试的。在线性模式下,PA IC在14 GHz和4.0 V电源电压下的输出P1dB为20.1 dBm。测得P1dB处PAE高达40.1%。在高效模式下,峰值PAE达到41.6%。
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引用次数: 0
An X-Band Robust GaN Low-Noise Amplifier MMIC with sub 2 dB Noise Figure 噪声系数低于2 dB的x波段鲁棒GaN低噪声放大器MMIC
Pub Date : 2018-09-01 DOI: 10.23919/eumc.2018.8541809
Oguz Kazan, F. Koçer, O. Aydin Civi
This paper presents a low-noise amplifier (LNA) operating between 8−11 GHz. Measurement results show that the LNA has a gain of more than 20 dB while achieving a noise figure of less than 2 dB. The three stage topology achieves high linearity, providing an OIP3 of 29 dBm at 0.6 W power dissipation. The robustness tests show that the circuit survives to at least 2.5 W (34 dBm) input power. With a size of just 2.8 × 1.3 mm2(3.6 mm2) the presented LNA is compact when compared to the state of the art. The circuit is realized using the 0.25 μm Power GaN/SiC HEMT process by WIN Semiconductor.
本文提出了一种工作频率为8 ~ 11 GHz的低噪声放大器(LNA)。测量结果表明,LNA的增益大于20 dB,噪声系数小于2 dB。三级拓扑结构实现了高线性度,在0.6 W功耗下提供29 dBm的OIP3。稳健性测试表明,该电路可以承受至少2.5 W (34 dBm)的输入功率。与现有技术相比,LNA的尺寸仅为2.8 × 1.3 mm2(3.6 mm2)。该电路采用WIN半导体公司0.25 μm功率GaN/SiC HEMT工艺实现。
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引用次数: 0
期刊
2018 13th European Microwave Integrated Circuits Conference (EuMIC)
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