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2018 13th European Microwave Integrated Circuits Conference (EuMIC)最新文献

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A 112 μW F-band Standing Wave Detector in 40nm CMOS for Sensing and Impedance Detection 用于传感和阻抗检测的112 μW f波段驻波检测器
Pub Date : 2018-09-01 DOI: 10.23919/EUMIC.2018.8539892
Bart Philippe, P. Reynaert
This paper presents an integrated standing wave detector for F-band sensing applications. The standing wave on a transmission line is detected at 312 probe locations to provide an accurate representation. Standing wave measurements are performed for differential amplitude and phase variations, demonstrating the potential for magnitude and angle detection. The minimum required RF input power is −25 dBm. The detector is implemented in a 40nm bulk CMOS technology operating from 96–to–140 GHz, while only consuming 112 μW of DC power with a 0.287 mm2 active occupied area.
本文介绍了一种用于f波段传感的集成驻波探测器。在312个探头位置检测传输线上的驻波,以提供准确的表示。驻波测量进行了差分振幅和相位变化,展示了幅度和角度检测的潜力。要求的最小射频输入功率为- 25dbm。该探测器采用40nm块体CMOS技术实现,工作频率为96 - 140 GHz,仅消耗112 μW直流功率,有效占用面积为0.287 mm2。
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引用次数: 1
Millimeter- Wave Detection on Basis of Graphene Photo-Thermoelectric Effect 基于石墨烯光热电效应的毫米波探测
Pub Date : 2018-09-01 DOI: 10.23919/eumc.2018.8541648
Yukang Feng, M. Dejarld, R. Weikle, Linli Xie, P. Campbell, R. Myers-Ward, D. Gaskill, N. Scott Barker
In this paper, millimeter-wave detection is conducted for the first time on the basis of graphene photo-thermoelectric effect. Upon receiving millimeter-wave radiation, graphene generates hot carriers which diffuse towards the nearby drain and source contact metals, and causing a differential drain-source voltage. To optimize detection performance, devices with different drain and source contact metals as well as graphene geometries are designed and tested. Measured results show that using Yb-graphene-Au metal combination with a 25 μm contact length perform the best, with a responsivity of 1.99 V/W.
本文首次基于石墨烯光热电效应进行了毫米波探测。在接收毫米波辐射时,石墨烯产生热载子,热载子向附近的漏极和源极接触金属扩散,并产生差动漏极-源极电压。为了优化检测性能,设计和测试了具有不同漏极和源极接触金属以及石墨烯几何形状的器件。测量结果表明,接触长度为25 μm的钇-石墨烯-金组合性能最佳,响应率为1.99 V/W。
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引用次数: 0
Design of an S-Band Chireix Outphasing Power Amplifier Based on a Systematic Bandwidth Limitation Analysis 基于系统带宽限制分析的s波段Chireix同相功率放大器设计
Pub Date : 2018-09-01 DOI: 10.23919/EUMIC.2018.8539878
A. Piacibello, R. Quaglia, Marco Pirolaf, S. Cripps
This work aims at assessing the factors that limit the bandwidth of a dual input Chireix outphasing PA based on a packaged commercial GaN device. To evaluate the effects of device parasitics, compensation elements and power combiner on the bandwidth we consider several output sections of increasing complexity. Their input impedances, at the back-off level of interest, are evaluated and referred to that of the ideal, frequency independent case. The comparison of the analyzed output sections reveals that the device parasitics limit the amplifier bandwidth more than output power combiner and compensation elements. Based on such conclusion, a dual input hybrid Chireix PA for LTE operation is designed and optimized for best efficiency at 7 dB back-off in the 3.1–3.7 GHz range. Measurements report back-off drain efficiency and PAE of 50% and 41% at center frequency, and performance within 10% of the maximum is maintained over more than 200 MHz.
这项工作旨在评估限制基于封装的商用GaN器件的双输入Chireix淘汰PA带宽的因素。为了评估器件寄生、补偿元件和功率合成器对带宽的影响,我们考虑了几个日益复杂的输出部分。它们的输入阻抗,在感兴趣的回退水平,被评估并参考理想的,频率无关的情况。通过对分析输出段的比较,发现器件寄生比输出功率合成器和补偿元件对放大器带宽的限制更大。基于上述结论,设计并优化了用于LTE操作的双输入混合型Chireix PA,以在3.1-3.7 GHz范围内实现7 dB回退的最佳效率。测量结果显示,在中心频率下,回泄效率和PAE分别为50%和41%,在200 MHz以上的频率下,性能保持在最大值的10%以内。
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引用次数: 11
High Linearity 57–66 GHz SiGe Receiver for Outdoor Point-to-Point Communication 用于室外点对点通信的高线性57-66 GHz SiGe接收机
Pub Date : 2018-09-01 DOI: 10.23919/EUMIC.2018.8539956
R. Ben Yishay, B. Sheinman, R. Carmon, J. Vovnoboy, O. Katz, D. Elad
Fully integrated receiver in a superhetrodyne architecture covering the entire 60 GHz frequency range (57–66 GHz) was designed and fabricated in 0.12 μm SiGe technology. The receiver chip includes an image-reject low-noise amplifier (LNA), RF-to-IF mixer, RF variable attenuator, IF variable gain amplifier, quadrature IF-to-baseband de-modulators, tunable baseband filter, phase-locked loop (PLL), and x3 frequency multiplier. The receiver chip achieve maximum gain of 65 dB, 5 dB minimum noise figure, better than 2 dBm IIP3 at high linearity mode, with >75 dB dynamic range, and consumes 630 mW.
采用0.12 μm SiGe技术设计和制造了覆盖整个60 GHz频率范围(57-66 GHz)的超外差架构的全集成接收器。接收器芯片包括图像抑制低噪声放大器(LNA)、RF-to-IF混频器、RF可变衰减器、中频可变增益放大器、正交中频基带解调器、可调谐基带滤波器、锁相环(PLL)和x3倍频器。该接收芯片最大增益为65 dB,最小噪声系数为5 dB,在高线性模式下优于2 dBm IIP3,动态范围>75 dB,功耗为630 mW。
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引用次数: 0
5G 26 GHz and 28 GHz Bands SiGe:C Receiver with Very High-Linearity and 56 dB Dynamic Range 5G 26 GHz和28 GHz频段SiGe:C接收机,具有极高的线性度和56 dB动态范围
Pub Date : 2018-09-01 DOI: 10.23919/EUMIC.2018.8539921
A. Fonte, Fabio Plutino, L. Moquillon, S. Razafimandimby, S. Pruvost
This paper presents a receiver that covers both 26 GHz and 28 GHz frequency bands assigned for 5G applications, e.g. microwave backhauling, fixed wireless access and moving hotspot. It is fabricated in SiGe 130nm BiCMOS technology that provides a high frequency HBT with fT of 230 GHz. The device can manage a wide range of input signals thanks to its very high linearity and gain dynamic range. The receiver, measured on VQFN, exhibits 36.7±3 dB of conversion gain (I+jQ) with a noise figure of 4.2±0.6 dB, 56 dB of gain dynamic range, 18 dBc of image rejection, 13 dBm output intermodulation point (with a pick of 18 dB at 25 GHz), 5 dBm output-referred 1dB compression point over the entire 24–30 GHz RF band and 1 GHz of intermediate output frequency band. The power consumption amounts to 1.27 W with 2.5 and 3.3-V supply voltages,
本文介绍了一种覆盖26 GHz和28 GHz频段的接收器,为5G应用分配,例如微波回程,固定无线接入和移动热点。它采用SiGe 130nm BiCMOS技术制造,可提供230 GHz的高频HBT。该器件由于具有非常高的线性度和增益动态范围,可以管理大范围的输入信号。在VQFN上测量,该接收机的转换增益(I+jQ)为36.7±3 dB,噪声系数为4.2±0.6 dB,增益动态范围为56 dB,图像抑制为18 dBc,输出互调点为13 dBm(在25 GHz时为18 dB),在整个24-30 GHz RF频带和1 GHz中间输出频带内,输出参考的1dB压缩点为5 dBm。供电电压为2.5 v和3.3 v时,功耗为1.27 W。
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引用次数: 6
An Ultra-Broadband Low-Noise Distributed Amplifier in InP DHBT Technology InP DHBT技术中的超宽带低噪声分布式放大器
Pub Date : 2018-09-01 DOI: 10.23919/eumc.2018.8541515
T. Shivan, M. Hossain, D. Stoppel, N. Weimann, S. Schulz, R. Doerner, V. Krozer, W. Heinrich
This paper reports an ultra-wideband low-noise amplifier in a transferred-substrate InP DHBT technology. The wideband characteristics are obtained by using a distributed topology with cascode unit cells. Each unit cell consists of two cascode-connected transistors with 500 nm emitter length and an fT/Fmax of ~ 350/400 GHz respectively. Due to optimum line-impedance matching, low common-base transistor's capacitance, and low collector-current operation, the circuit also exhibits a low noise figure. The measured circuit shows a bandwidth of 40 … 185 GHz with a noise figure of 8 dB in the frequency range 75 … 105 GHz. Moreover, this circuit demonstrates the widest 3-dB bandwidth operation among all reported single stage amplifiers with cascode configuration.
本文报道了一种基于转移衬底InP DHBT技术的超宽带低噪声放大器。宽带特性是通过使用层叠单元的分布式拓扑来获得的。每个单元电池由两个级联晶体管组成,发射极长度为500 nm, fT/Fmax分别为~ 350/400 GHz。由于最佳的线阻抗匹配,低共基晶体管的电容和低集电极电流工作,该电路也显示出低噪声数字。所测电路的带宽为40 ~ 185 GHz,在75 ~ 105 GHz频率范围内噪声系数为8 dB。此外,该电路在所有已报道的具有级联码配置的单级放大器中具有最宽的3db带宽操作。
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引用次数: 1
EuMIC01 : Millimeter-Wave GaN Devices and MMICs and Thermal Reliability Considerations EuMIC01:毫米波GaN器件和mmic以及热可靠性考虑
Pub Date : 2018-09-01 DOI: 10.23919/eumic.2018.8539944
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引用次数: 0
AIGaN/GaN HEMT with Distributed Gate for Improved Thermal Performance 采用分布式栅极的AIGaN/GaN HEMT提高热性能
Pub Date : 2018-09-01 DOI: 10.23919/EUMIC.2018.8539896)
Maira Elksne, Abdullah Ai-Khalidi, E. Wasige
This paper reports a novel type of distributed gate (DG) HEMT fabricated using isolation by oxygen plasma. The technique results in planar devices with low gate leakage currents of only $1.3 mu mathrm{A/mm}$ at −20 V gate voltage for devices with gate periphery of 1 mm. The DG-HEMT improves the thermal performance by reducing the current drop at higher drain voltages leading to higher output powers.
本文报道了一种采用氧等离子体隔离法制备的新型分布式栅极(DG) HEMT。对于栅极外缘为1mm的器件,在−20 V栅极电压下,该技术可获得栅极漏电流低的平面器件,仅为1.3 μ m{A/mm}$。DG-HEMT通过降低高漏极电压下的电流下降,从而提高输出功率,从而改善了热性能。
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引用次数: 1
A Class E Digital Transmitter for 16-APSK 用于16 apsk的E类数字发射机
Pub Date : 2018-09-01 DOI: 10.23919/eumc.2018.8541797
G. Watkins
A digital transmitter architecture is described composed of two independent class E amplifiers with different saturate output powers (POUT). Their output ports are connected directly together without a switch or combiner. The two amplifiers are enabled or disabled by alternatively biasing their gates in synch with the envelope of the input signal. The transmitter is optimised for 16 state amplitude phase shift keying (16-APSK). Under simulation, the two class E amplifiers were optimised for a POUT of 13.6 dBm and 22.7 dBm. 71.4% and 78.2 % power added efficiency (P AE) was achieved respectively. The same transistor was used for both amplifiers and the different POUT defined by the quality factor (Q) of their output bandpass filter (BPF). A practical implementation achieved 49.8% and 45.6% PAE at POUTS of 14.0 dBm and 20.3 dBm respectively. With a 16-APSK signal, 46.9% PAE was achieved at 19.8 dBm POUT, with an error vector magnitude (EVM) of 5.7%.
描述了一种由两个独立的E类放大器组成的数字发射机结构,它们具有不同的饱和输出功率(POUT)。它们的输出端口直接连接在一起,没有开关或组合器。通过将两个放大器的门与输入信号的包络同步进行选择性偏置,使能或使能。发射机被优化为16状态振幅相移键控(16- apsk)。仿真结果表明,两种E类放大器的输出功率分别为13.6 dBm和22.7 dBm。功率增加效率(pae)分别为71.4%和78.2%。相同的晶体管用于两个放大器和由其输出带通滤波器(BPF)的质量因子(Q)定义的不同的POUT。在14.0 dBm和20.3 dBm的输出端分别实现了49.8%和45.6%的PAE。对于16 apsk信号,在19.8 dBm POUT下可获得46.9%的PAE,误差矢量幅度(EVM)为5.7%。
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引用次数: 0
A 50W Highly Linear 3-Way Integrated Wideband Doherty PA for Small-Cell Application 50W高线性3路集成宽带Doherty小小区扩音器
Pub Date : 2018-09-01 DOI: 10.23919/EUMC.2018.8541712
Hao Zhang, S. De Meyer, C. Duvanaud, S. Bachir
This article presents the realization and measurement results of a 50W highly linear 3-way integrated Wideband Doherty P A using LDMOS (laterally diffused metal oxide semiconductor) technology. The efficiency / linearity compromise is highly optimized for a power range from 12 dB OBO (output back-off) to 8 dB OBO for the frequency range from 1800 MHz to 2200 MHz. The proposed 3-way integrated combiner uses Cds (drain-to-source capacitance) absorption method to achieve wideband impedance transformation. Linear gain around 16 dB with efficiency >41 %, raw ACPR (Adjacent Channel Power Ratio) of −40dBc was measured at 12 dB back off. At 8 dB back off, efficiency of 45-49% with a raw ACPR< −35 dBc was measured with WCDMA signal. For the optimized Doherty, the measured AMPM(amplitude-to-phase) values at P3dB level has a minimal spread < 5 deg and consistent shape in a fractional bandwidth of 20%. At 39 dBm Pout, 8 dB OBO, the DPA was corrected to <-55 dBc with 60 MHz ISBW in the band B1, B2, B3. The highly linear performance demonstrates that the designed RFIC presents a suitable candidate for multi-band MIMO application for the selected frequency band from 1800 MHz to 2200 MHz.
本文介绍了采用LDMOS(横向扩散金属氧化物半导体)技术的50W高线性3路集成宽带Doherty pa的实现和测量结果。在1800 MHz至2200 MHz的频率范围内,从12 dB OBO(输出回退)到8 dB OBO的功率范围内,效率/线性度折衷得到了高度优化。提出的3路集成组合器采用Cds(漏源电容)吸收方法实现宽带阻抗变换。线性增益约为16 dB,效率> 41%,原始ACPR(相邻通道功率比)为- 40dBc。在8 dB回退时,WCDMA信号在原始ACPR< - 35 dBc时的效率为45-49%。对于优化的Doherty,在P3dB电平上测量的AMPM(幅相比)值在20%的分数带宽内具有最小的扩展< 5度和一致的形状。在输出为39dbm,输出为8db时,DPA在B1、B2、B3波段以60mhz ISBW校正至<- 55dbc。高线性性能表明,所设计的RFIC在1800mhz至2200mhz范围内适合多频段MIMO应用。
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引用次数: 2
期刊
2018 13th European Microwave Integrated Circuits Conference (EuMIC)
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