Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539892
Bart Philippe, P. Reynaert
This paper presents an integrated standing wave detector for F-band sensing applications. The standing wave on a transmission line is detected at 312 probe locations to provide an accurate representation. Standing wave measurements are performed for differential amplitude and phase variations, demonstrating the potential for magnitude and angle detection. The minimum required RF input power is −25 dBm. The detector is implemented in a 40nm bulk CMOS technology operating from 96–to–140 GHz, while only consuming 112 μW of DC power with a 0.287 mm2 active occupied area.
{"title":"A 112 μW F-band Standing Wave Detector in 40nm CMOS for Sensing and Impedance Detection","authors":"Bart Philippe, P. Reynaert","doi":"10.23919/EUMIC.2018.8539892","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539892","url":null,"abstract":"This paper presents an integrated standing wave detector for F-band sensing applications. The standing wave on a transmission line is detected at 312 probe locations to provide an accurate representation. Standing wave measurements are performed for differential amplitude and phase variations, demonstrating the potential for magnitude and angle detection. The minimum required RF input power is −25 dBm. The detector is implemented in a 40nm bulk CMOS technology operating from 96–to–140 GHz, while only consuming 112 μW of DC power with a 0.287 mm2 active occupied area.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121651793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/eumc.2018.8541648
Yukang Feng, M. Dejarld, R. Weikle, Linli Xie, P. Campbell, R. Myers-Ward, D. Gaskill, N. Scott Barker
In this paper, millimeter-wave detection is conducted for the first time on the basis of graphene photo-thermoelectric effect. Upon receiving millimeter-wave radiation, graphene generates hot carriers which diffuse towards the nearby drain and source contact metals, and causing a differential drain-source voltage. To optimize detection performance, devices with different drain and source contact metals as well as graphene geometries are designed and tested. Measured results show that using Yb-graphene-Au metal combination with a 25 μm contact length perform the best, with a responsivity of 1.99 V/W.
{"title":"Millimeter- Wave Detection on Basis of Graphene Photo-Thermoelectric Effect","authors":"Yukang Feng, M. Dejarld, R. Weikle, Linli Xie, P. Campbell, R. Myers-Ward, D. Gaskill, N. Scott Barker","doi":"10.23919/eumc.2018.8541648","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541648","url":null,"abstract":"In this paper, millimeter-wave detection is conducted for the first time on the basis of graphene photo-thermoelectric effect. Upon receiving millimeter-wave radiation, graphene generates hot carriers which diffuse towards the nearby drain and source contact metals, and causing a differential drain-source voltage. To optimize detection performance, devices with different drain and source contact metals as well as graphene geometries are designed and tested. Measured results show that using Yb-graphene-Au metal combination with a 25 μm contact length perform the best, with a responsivity of 1.99 V/W.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123545615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539878
A. Piacibello, R. Quaglia, Marco Pirolaf, S. Cripps
This work aims at assessing the factors that limit the bandwidth of a dual input Chireix outphasing PA based on a packaged commercial GaN device. To evaluate the effects of device parasitics, compensation elements and power combiner on the bandwidth we consider several output sections of increasing complexity. Their input impedances, at the back-off level of interest, are evaluated and referred to that of the ideal, frequency independent case. The comparison of the analyzed output sections reveals that the device parasitics limit the amplifier bandwidth more than output power combiner and compensation elements. Based on such conclusion, a dual input hybrid Chireix PA for LTE operation is designed and optimized for best efficiency at 7 dB back-off in the 3.1–3.7 GHz range. Measurements report back-off drain efficiency and PAE of 50% and 41% at center frequency, and performance within 10% of the maximum is maintained over more than 200 MHz.
{"title":"Design of an S-Band Chireix Outphasing Power Amplifier Based on a Systematic Bandwidth Limitation Analysis","authors":"A. Piacibello, R. Quaglia, Marco Pirolaf, S. Cripps","doi":"10.23919/EUMIC.2018.8539878","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539878","url":null,"abstract":"This work aims at assessing the factors that limit the bandwidth of a dual input Chireix outphasing PA based on a packaged commercial GaN device. To evaluate the effects of device parasitics, compensation elements and power combiner on the bandwidth we consider several output sections of increasing complexity. Their input impedances, at the back-off level of interest, are evaluated and referred to that of the ideal, frequency independent case. The comparison of the analyzed output sections reveals that the device parasitics limit the amplifier bandwidth more than output power combiner and compensation elements. Based on such conclusion, a dual input hybrid Chireix PA for LTE operation is designed and optimized for best efficiency at 7 dB back-off in the 3.1–3.7 GHz range. Measurements report back-off drain efficiency and PAE of 50% and 41% at center frequency, and performance within 10% of the maximum is maintained over more than 200 MHz.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124661389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539956
R. Ben Yishay, B. Sheinman, R. Carmon, J. Vovnoboy, O. Katz, D. Elad
Fully integrated receiver in a superhetrodyne architecture covering the entire 60 GHz frequency range (57–66 GHz) was designed and fabricated in 0.12 μm SiGe technology. The receiver chip includes an image-reject low-noise amplifier (LNA), RF-to-IF mixer, RF variable attenuator, IF variable gain amplifier, quadrature IF-to-baseband de-modulators, tunable baseband filter, phase-locked loop (PLL), and x3 frequency multiplier. The receiver chip achieve maximum gain of 65 dB, 5 dB minimum noise figure, better than 2 dBm IIP3 at high linearity mode, with >75 dB dynamic range, and consumes 630 mW.
{"title":"High Linearity 57–66 GHz SiGe Receiver for Outdoor Point-to-Point Communication","authors":"R. Ben Yishay, B. Sheinman, R. Carmon, J. Vovnoboy, O. Katz, D. Elad","doi":"10.23919/EUMIC.2018.8539956","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539956","url":null,"abstract":"Fully integrated receiver in a superhetrodyne architecture covering the entire 60 GHz frequency range (57–66 GHz) was designed and fabricated in 0.12 μm SiGe technology. The receiver chip includes an image-reject low-noise amplifier (LNA), RF-to-IF mixer, RF variable attenuator, IF variable gain amplifier, quadrature IF-to-baseband de-modulators, tunable baseband filter, phase-locked loop (PLL), and x3 frequency multiplier. The receiver chip achieve maximum gain of 65 dB, 5 dB minimum noise figure, better than 2 dBm IIP3 at high linearity mode, with >75 dB dynamic range, and consumes 630 mW.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"13 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120912403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539921
A. Fonte, Fabio Plutino, L. Moquillon, S. Razafimandimby, S. Pruvost
This paper presents a receiver that covers both 26 GHz and 28 GHz frequency bands assigned for 5G applications, e.g. microwave backhauling, fixed wireless access and moving hotspot. It is fabricated in SiGe 130nm BiCMOS technology that provides a high frequency HBT with fT of 230 GHz. The device can manage a wide range of input signals thanks to its very high linearity and gain dynamic range. The receiver, measured on VQFN, exhibits 36.7±3 dB of conversion gain (I+jQ) with a noise figure of 4.2±0.6 dB, 56 dB of gain dynamic range, 18 dBc of image rejection, 13 dBm output intermodulation point (with a pick of 18 dB at 25 GHz), 5 dBm output-referred 1dB compression point over the entire 24–30 GHz RF band and 1 GHz of intermediate output frequency band. The power consumption amounts to 1.27 W with 2.5 and 3.3-V supply voltages,
{"title":"5G 26 GHz and 28 GHz Bands SiGe:C Receiver with Very High-Linearity and 56 dB Dynamic Range","authors":"A. Fonte, Fabio Plutino, L. Moquillon, S. Razafimandimby, S. Pruvost","doi":"10.23919/EUMIC.2018.8539921","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539921","url":null,"abstract":"This paper presents a receiver that covers both 26 GHz and 28 GHz frequency bands assigned for 5G applications, e.g. microwave backhauling, fixed wireless access and moving hotspot. It is fabricated in SiGe 130nm BiCMOS technology that provides a high frequency HBT with fT of 230 GHz. The device can manage a wide range of input signals thanks to its very high linearity and gain dynamic range. The receiver, measured on VQFN, exhibits 36.7±3 dB of conversion gain (I+jQ) with a noise figure of 4.2±0.6 dB, 56 dB of gain dynamic range, 18 dBc of image rejection, 13 dBm output intermodulation point (with a pick of 18 dB at 25 GHz), 5 dBm output-referred 1dB compression point over the entire 24–30 GHz RF band and 1 GHz of intermediate output frequency band. The power consumption amounts to 1.27 W with 2.5 and 3.3-V supply voltages,","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131174690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/eumc.2018.8541515
T. Shivan, M. Hossain, D. Stoppel, N. Weimann, S. Schulz, R. Doerner, V. Krozer, W. Heinrich
This paper reports an ultra-wideband low-noise amplifier in a transferred-substrate InP DHBT technology. The wideband characteristics are obtained by using a distributed topology with cascode unit cells. Each unit cell consists of two cascode-connected transistors with 500 nm emitter length and an fT/Fmax of ~ 350/400 GHz respectively. Due to optimum line-impedance matching, low common-base transistor's capacitance, and low collector-current operation, the circuit also exhibits a low noise figure. The measured circuit shows a bandwidth of 40 … 185 GHz with a noise figure of 8 dB in the frequency range 75 … 105 GHz. Moreover, this circuit demonstrates the widest 3-dB bandwidth operation among all reported single stage amplifiers with cascode configuration.
{"title":"An Ultra-Broadband Low-Noise Distributed Amplifier in InP DHBT Technology","authors":"T. Shivan, M. Hossain, D. Stoppel, N. Weimann, S. Schulz, R. Doerner, V. Krozer, W. Heinrich","doi":"10.23919/eumc.2018.8541515","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541515","url":null,"abstract":"This paper reports an ultra-wideband low-noise amplifier in a transferred-substrate InP DHBT technology. The wideband characteristics are obtained by using a distributed topology with cascode unit cells. Each unit cell consists of two cascode-connected transistors with 500 nm emitter length and an fT/Fmax of ~ 350/400 GHz respectively. Due to optimum line-impedance matching, low common-base transistor's capacitance, and low collector-current operation, the circuit also exhibits a low noise figure. The measured circuit shows a bandwidth of 40 … 185 GHz with a noise figure of 8 dB in the frequency range 75 … 105 GHz. Moreover, this circuit demonstrates the widest 3-dB bandwidth operation among all reported single stage amplifiers with cascode configuration.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132939495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/eumic.2018.8539944
{"title":"EuMIC01 : Millimeter-Wave GaN Devices and MMICs and Thermal Reliability Considerations","authors":"","doi":"10.23919/eumic.2018.8539944","DOIUrl":"https://doi.org/10.23919/eumic.2018.8539944","url":null,"abstract":"","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133819191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539896)
Maira Elksne, Abdullah Ai-Khalidi, E. Wasige
This paper reports a novel type of distributed gate (DG) HEMT fabricated using isolation by oxygen plasma. The technique results in planar devices with low gate leakage currents of only $1.3 mu mathrm{A/mm}$ at −20 V gate voltage for devices with gate periphery of 1 mm. The DG-HEMT improves the thermal performance by reducing the current drop at higher drain voltages leading to higher output powers.
{"title":"AIGaN/GaN HEMT with Distributed Gate for Improved Thermal Performance","authors":"Maira Elksne, Abdullah Ai-Khalidi, E. Wasige","doi":"10.23919/EUMIC.2018.8539896)","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539896)","url":null,"abstract":"This paper reports a novel type of distributed gate (DG) HEMT fabricated using isolation by oxygen plasma. The technique results in planar devices with low gate leakage currents of only $1.3 mu mathrm{A/mm}$ at −20 V gate voltage for devices with gate periphery of 1 mm. The DG-HEMT improves the thermal performance by reducing the current drop at higher drain voltages leading to higher output powers.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134348843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/eumc.2018.8541797
G. Watkins
A digital transmitter architecture is described composed of two independent class E amplifiers with different saturate output powers (POUT). Their output ports are connected directly together without a switch or combiner. The two amplifiers are enabled or disabled by alternatively biasing their gates in synch with the envelope of the input signal. The transmitter is optimised for 16 state amplitude phase shift keying (16-APSK). Under simulation, the two class E amplifiers were optimised for a POUT of 13.6 dBm and 22.7 dBm. 71.4% and 78.2 % power added efficiency (P AE) was achieved respectively. The same transistor was used for both amplifiers and the different POUT defined by the quality factor (Q) of their output bandpass filter (BPF). A practical implementation achieved 49.8% and 45.6% PAE at POUTS of 14.0 dBm and 20.3 dBm respectively. With a 16-APSK signal, 46.9% PAE was achieved at 19.8 dBm POUT, with an error vector magnitude (EVM) of 5.7%.
{"title":"A Class E Digital Transmitter for 16-APSK","authors":"G. Watkins","doi":"10.23919/eumc.2018.8541797","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541797","url":null,"abstract":"A digital transmitter architecture is described composed of two independent class E amplifiers with different saturate output powers (POUT). Their output ports are connected directly together without a switch or combiner. The two amplifiers are enabled or disabled by alternatively biasing their gates in synch with the envelope of the input signal. The transmitter is optimised for 16 state amplitude phase shift keying (16-APSK). Under simulation, the two class E amplifiers were optimised for a POUT of 13.6 dBm and 22.7 dBm. 71.4% and 78.2 % power added efficiency (P AE) was achieved respectively. The same transistor was used for both amplifiers and the different POUT defined by the quality factor (Q) of their output bandpass filter (BPF). A practical implementation achieved 49.8% and 45.6% PAE at POUTS of 14.0 dBm and 20.3 dBm respectively. With a 16-APSK signal, 46.9% PAE was achieved at 19.8 dBm POUT, with an error vector magnitude (EVM) of 5.7%.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"62 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116362312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMC.2018.8541712
Hao Zhang, S. De Meyer, C. Duvanaud, S. Bachir
This article presents the realization and measurement results of a 50W highly linear 3-way integrated Wideband Doherty P A using LDMOS (laterally diffused metal oxide semiconductor) technology. The efficiency / linearity compromise is highly optimized for a power range from 12 dB OBO (output back-off) to 8 dB OBO for the frequency range from 1800 MHz to 2200 MHz. The proposed 3-way integrated combiner uses Cds (drain-to-source capacitance) absorption method to achieve wideband impedance transformation. Linear gain around 16 dB with efficiency >41 %, raw ACPR (Adjacent Channel Power Ratio) of −40dBc was measured at 12 dB back off. At 8 dB back off, efficiency of 45-49% with a raw ACPR< −35 dBc was measured with WCDMA signal. For the optimized Doherty, the measured AMPM(amplitude-to-phase) values at P3dB level has a minimal spread < 5 deg and consistent shape in a fractional bandwidth of 20%. At 39 dBm Pout, 8 dB OBO, the DPA was corrected to <-55 dBc with 60 MHz ISBW in the band B1, B2, B3. The highly linear performance demonstrates that the designed RFIC presents a suitable candidate for multi-band MIMO application for the selected frequency band from 1800 MHz to 2200 MHz.
本文介绍了采用LDMOS(横向扩散金属氧化物半导体)技术的50W高线性3路集成宽带Doherty pa的实现和测量结果。在1800 MHz至2200 MHz的频率范围内，从12 dB OBO(输出回退)到8 dB OBO的功率范围内，效率/线性度折衷得到了高度优化。提出的3路集成组合器采用Cds(漏源电容)吸收方法实现宽带阻抗变换。线性增益约为16 dB，效率> 41%，原始ACPR(相邻通道功率比)为- 40dBc。在8 dB回退时，WCDMA信号在原始ACPR< - 35 dBc时的效率为45-49%。对于优化的Doherty，在P3dB电平上测量的AMPM(幅相比)值在20%的分数带宽内具有最小的扩展< 5度和一致的形状。在输出为39dbm，输出为8db时，DPA在B1、B2、B3波段以60mhz ISBW校正至<- 55dbc。高线性性能表明，所设计的RFIC在1800mhz至2200mhz范围内适合多频段MIMO应用。
{"title":"A 50W Highly Linear 3-Way Integrated Wideband Doherty PA for Small-Cell Application","authors":"Hao Zhang, S. De Meyer, C. Duvanaud, S. Bachir","doi":"10.23919/EUMC.2018.8541712","DOIUrl":"https://doi.org/10.23919/EUMC.2018.8541712","url":null,"abstract":"This article presents the realization and measurement results of a 50W highly linear 3-way integrated Wideband Doherty P A using LDMOS (laterally diffused metal oxide semiconductor) technology. The efficiency / linearity compromise is highly optimized for a power range from 12 dB OBO (output back-off) to 8 dB OBO for the frequency range from 1800 MHz to 2200 MHz. The proposed 3-way integrated combiner uses Cds (drain-to-source capacitance) absorption method to achieve wideband impedance transformation. Linear gain around 16 dB with efficiency >41 %, raw ACPR (Adjacent Channel Power Ratio) of −40dBc was measured at 12 dB back off. At 8 dB back off, efficiency of 45-49% with a raw ACPR< −35 dBc was measured with WCDMA signal. For the optimized Doherty, the measured AMPM(amplitude-to-phase) values at P3dB level has a minimal spread < 5 deg and consistent shape in a fractional bandwidth of 20%. At 39 dBm Pout, 8 dB OBO, the DPA was corrected to <-55 dBc with 60 MHz ISBW in the band B1, B2, B3. The highly linear performance demonstrates that the designed RFIC presents a suitable candidate for multi-band MIMO application for the selected frequency band from 1800 MHz to 2200 MHz.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"10 18","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131839826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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