Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539952
Run Levinger, R. Levi, E. Shumaker, S. Levin, G. Horovitz
This paper presents an LC tank, ultra-low power CMOS digitally controlled oscillator (DCO) with resistive drain delay element designed and fabricated in 28 nm CMOS process. The implemented DCO covers 3.95 to 4.7 GHz (17% tuning range, TR) with a resolution of 300 to 500 KHz and gain variation of less than 3 % within a sub-band. Measured phase noise at 4.6 GHz is − 83, −109.5 and −130 dBc/Hz for 100 KHz, 1 MHz and 10 MHz offsets respectively. The DCO is designed to be temperature robust and allows operation within −40°C to 130°C. The DCO and output buffers consume 0.44 mA from a 0.8 V supply, for a total power of 0.35mW. The DCO active area is 0.04 mm2.
{"title":"A 3.9-4.7 GHz 0.35 mW DCO with −187.4 dBc FoM in 28nm CMOS","authors":"Run Levinger, R. Levi, E. Shumaker, S. Levin, G. Horovitz","doi":"10.23919/EUMIC.2018.8539952","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539952","url":null,"abstract":"This paper presents an LC tank, ultra-low power CMOS digitally controlled oscillator (DCO) with resistive drain delay element designed and fabricated in 28 nm CMOS process. The implemented DCO covers 3.95 to 4.7 GHz (17% tuning range, TR) with a resolution of 300 to 500 KHz and gain variation of less than 3 % within a sub-band. Measured phase noise at 4.6 GHz is − 83, −109.5 and −130 dBc/Hz for 100 KHz, 1 MHz and 10 MHz offsets respectively. The DCO is designed to be temperature robust and allows operation within −40°C to 130°C. The DCO and output buffers consume 0.44 mA from a 0.8 V supply, for a total power of 0.35mW. The DCO active area is 0.04 mm2.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125608712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539936
M. van Heijningen, J. Essing, F. V. van Vliet
In the transmit chain of high-power phased-array radars more and more use is made of Gallium-Nitride (GaN) high-power amplifiers (HPAs), while in the receive chain there is a trend to move to integrated silicon (Si) based components. The GaN amplifiers usually require a relatively high input power, making it necessary to include a medium power driver amplifier. For phased-array operation also a phase shifter in the transmit chain is required. In this paper the design and measurement results of an integrated phase-shifter-driver MMIC are presented, which has been optimized to directly drive an X-band GaN HP A. This Gallium-Arsenide (GaAs) MMIC has been designed to fit in a low-cost plastic QFN package to reduce the cost of the front-end module assembly. The realized QFN-packaged MMIC features a 6-bit digital phase shifter and a CW output power of more than 22 dBm at a source power of 5 dBm, from 8 to 11 GHz. Over this bandwidth the measured RMS phase error is less than 5°.
在大功率相控阵雷达的发射链中越来越多地使用氮化镓(GaN)大功率放大器，而在接收链中则有向集成硅(Si)基器件发展的趋势。氮化镓放大器通常需要一个相对较高的输入功率，使得它有必要包括一个中等功率的驱动放大器。对于相控阵操作，在发射链中也需要一个移相器。本文介绍了一种集成移相驱动器MMIC的设计和测量结果，该MMIC经过优化，可直接驱动x波段GaN HP a。这种砷化镓(GaAs) MMIC被设计成适合低成本的塑料QFN封装，以降低前端模块组装的成本。所实现的qfn封装MMIC具有6位数字移相器，源功率为5 dBm，连续波输出功率超过22 dBm，范围为8至11 GHz。在此带宽范围内，测量的均方根相位误差小于5°。
{"title":"X-Band GaAs Phase Driver MMIC Optimized for GaN-Based Phased-Array Radar Transmit Chain","authors":"M. van Heijningen, J. Essing, F. V. van Vliet","doi":"10.23919/EUMIC.2018.8539936","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539936","url":null,"abstract":"In the transmit chain of high-power phased-array radars more and more use is made of Gallium-Nitride (GaN) high-power amplifiers (HPAs), while in the receive chain there is a trend to move to integrated silicon (Si) based components. The GaN amplifiers usually require a relatively high input power, making it necessary to include a medium power driver amplifier. For phased-array operation also a phase shifter in the transmit chain is required. In this paper the design and measurement results of an integrated phase-shifter-driver MMIC are presented, which has been optimized to directly drive an X-band GaN HP A. This Gallium-Arsenide (GaAs) MMIC has been designed to fit in a low-cost plastic QFN package to reduce the cost of the front-end module assembly. The realized QFN-packaged MMIC features a 6-bit digital phase shifter and a CW output power of more than 22 dBm at a source power of 5 dBm, from 8 to 11 GHz. Over this bandwidth the measured RMS phase error is less than 5°.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125239989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539870
C. Person, D. Nguyen, J. Coupez, P. Minard, D. L. Tong, P. Borel, D. Izoard
Advanced internet and multimedia set-top boxes are today massively based on 4*4 MIMO systems, with multi-sub-bands standards (WIFI bands, LTE, Bluetooth, …). Interconnections between the numerous access ports of different radio chipsets mounted on a main PCB (Printed Circuit Board) and multiple antennas spatially distributed on the plastic casing become therefore a great challenge for cost and performances motivations. The flex technology, based on well-controlled and low cost process, brings new functionalities and opportunities for assembling sub-systems, under compactness considerations, as well as electrical performances improvement. In this paper, we discuss about the characterisation of connectors used for flexible printed circuit to a main PCB interconnections. The choice of the connectors is a critical issue, and must be properly done considering both local ground and signal interconnections constraints. Simulation and measurements are performed up to 15Ghz covering WIFI bands
{"title":"Characterization of Flex to Printed Circuit Board Interconnections Using Insertion Connectors","authors":"C. Person, D. Nguyen, J. Coupez, P. Minard, D. L. Tong, P. Borel, D. Izoard","doi":"10.23919/EUMIC.2018.8539870","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539870","url":null,"abstract":"Advanced internet and multimedia set-top boxes are today massively based on 4*4 MIMO systems, with multi-sub-bands standards (WIFI bands, LTE, Bluetooth, …). Interconnections between the numerous access ports of different radio chipsets mounted on a main PCB (Printed Circuit Board) and multiple antennas spatially distributed on the plastic casing become therefore a great challenge for cost and performances motivations. The flex technology, based on well-controlled and low cost process, brings new functionalities and opportunities for assembling sub-systems, under compactness considerations, as well as electrical performances improvement. In this paper, we discuss about the characterisation of connectors used for flexible printed circuit to a main PCB interconnections. The choice of the connectors is a critical issue, and must be properly done considering both local ground and signal interconnections constraints. Simulation and measurements are performed up to 15Ghz covering WIFI bands","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127048627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539965
Jyh-Chyurn Guo, K. Yeh
A new compact model has been developed in this paper for accurate simulation of RF noise and extraction of actual intrinsic noise in sub-40 nm multi-finger nMOSFETs. This model can predict and verify the excess noise sources before and after deembedding, the mechanism responsible for the complicated layout dependence in various noise parameters, and facilitate optimization design for low noise devices and circuits in nanoscale CMOS technology.
{"title":"A New Compact Model for Accurate Simulation of RF Noise in Sub-40nm Multi-Finger nMOSFETs","authors":"Jyh-Chyurn Guo, K. Yeh","doi":"10.23919/EUMIC.2018.8539965","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539965","url":null,"abstract":"A new compact model has been developed in this paper for accurate simulation of RF noise and extraction of actual intrinsic noise in sub-40 nm multi-finger nMOSFETs. This model can predict and verify the excess noise sources before and after deembedding, the mechanism responsible for the complicated layout dependence in various noise parameters, and facilitate optimization design for low noise devices and circuits in nanoscale CMOS technology.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"153 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131746768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539914
Manuel Potércau, N. Deltimple, A. Ghiotto
In this paper, an ultra-compact transformer-based integrated quadrature hybrid coupler is presented. Its design, taking advantage of the transformer distributed parasitic capacitances to minimize lumped capacitors, achieves low insertion loss and high compactness. For demonstration purposes, a prototype, operating at Ku-band and based on the 130 nm BiCMOS technology from STMicroelectronics, has been fabricated. Theoretical, simulated and experimental results are reported. The demonstrated integrated coupler occupies an area as small as 0.0014 mm2. In the 17.3 to 20.2 GHz frequency range (15.5% relative bandwidth) used for SATCOM applications, an insertion loss and a phase imbalance of better than 0.4 dB and 2° are experimentally obtained, respectively, with an amplitude imbalance of less than 1 dB.
{"title":"Ultra-Compact Low-Loss Integrated Transformer-Based Ku-Band Quadrature Hybrid Coupler","authors":"Manuel Potércau, N. Deltimple, A. Ghiotto","doi":"10.23919/EUMIC.2018.8539914","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539914","url":null,"abstract":"In this paper, an ultra-compact transformer-based integrated quadrature hybrid coupler is presented. Its design, taking advantage of the transformer distributed parasitic capacitances to minimize lumped capacitors, achieves low insertion loss and high compactness. For demonstration purposes, a prototype, operating at Ku-band and based on the 130 nm BiCMOS technology from STMicroelectronics, has been fabricated. Theoretical, simulated and experimental results are reported. The demonstrated integrated coupler occupies an area as small as 0.0014 mm2. In the 17.3 to 20.2 GHz frequency range (15.5% relative bandwidth) used for SATCOM applications, an insertion loss and a phase imbalance of better than 0.4 dB and 2° are experimentally obtained, respectively, with an amplitude imbalance of less than 1 dB.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132809416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539908
R. Jain, Robin Zatta, J. Grzyb, D. Harame, U. Pfeiffer
This paper reports on the design and characterization of a CMOS based direct terahertz detector in an advanced 22nm FD-SOI technology. The nFET detector is implemented with an on-chip ring antenna fully compliant with the technology density rules. At 0.855 THz, a maximum optical responsivity and a minimum noise equivalent power (NEP) of 1.51 kV/W and 22.65 pW/HZ1/2respectively were measured in a voltage mode readout at a chopping frequency of 3 kHz. In the current mode readout, a maximum responsivity of 180 mA/W and minimum NEP of 12 pW/HZ1/2were measured at a chopping frequency of 120 kHz. Additionally, the effect of transistor back-gate biasing on the detector responsivity is also characterized. The detector sensitivity is comparable to the best reported room-temperature THz direct detectors in any silicon integrated technology, along with the highest reported RF operational bandwidth with NEP below 40 pW/HZ1/2in the measured frequency band of 0.7–1 THz.
{"title":"A Terahertz Direct Detector in 22nm FD-SOI CMOS","authors":"R. Jain, Robin Zatta, J. Grzyb, D. Harame, U. Pfeiffer","doi":"10.23919/EUMIC.2018.8539908","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539908","url":null,"abstract":"This paper reports on the design and characterization of a CMOS based direct terahertz detector in an advanced 22nm FD-SOI technology. The nFET detector is implemented with an on-chip ring antenna fully compliant with the technology density rules. At 0.855 THz, a maximum optical responsivity and a minimum noise equivalent power (NEP) of 1.51 kV/W and 22.65 pW/HZ1/2respectively were measured in a voltage mode readout at a chopping frequency of 3 kHz. In the current mode readout, a maximum responsivity of 180 mA/W and minimum NEP of 12 pW/HZ1/2were measured at a chopping frequency of 120 kHz. Additionally, the effect of transistor back-gate biasing on the detector responsivity is also characterized. The detector sensitivity is comparable to the best reported room-temperature THz direct detectors in any silicon integrated technology, along with the highest reported RF operational bandwidth with NEP below 40 pW/HZ1/2in the measured frequency band of 0.7–1 THz.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133191544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/eumc.2018.8541519
Paul Stärke, D. Fritsche, C. Carta, F. Ellinger
This work presents the application of vertical solderless coaxial connectors for the 2.92 mm and 1.85 mm standards operating up to 67 GHz. Optimized PCB footprints are designed to minimize the interface reflections in conjunction with a widely available RF substrate. A return loss above 20 dB up to 30 GHz for the 2.92 mm connector and above 15 dB up to 60 GHz for the 1.85 mm connector is achieved. The de-embedded insertion loss per connector does not exceed 0.5 dB at 40 GHz and 0.75 dB at 67 GHz, respectively. A differential wideband amplifier and an ultra-wideband antenna are packaged and measured as practical demonstration, showing only a slight decrease in performance over the full bandwidth of interest.
{"title":"Optimization of PCB Transitions for Vertical Solderless Coaxial Connectors up to 67 GHz","authors":"Paul Stärke, D. Fritsche, C. Carta, F. Ellinger","doi":"10.23919/eumc.2018.8541519","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541519","url":null,"abstract":"This work presents the application of vertical solderless coaxial connectors for the 2.92 mm and 1.85 mm standards operating up to 67 GHz. Optimized PCB footprints are designed to minimize the interface reflections in conjunction with a widely available RF substrate. A return loss above 20 dB up to 30 GHz for the 2.92 mm connector and above 15 dB up to 60 GHz for the 1.85 mm connector is achieved. The de-embedded insertion loss per connector does not exceed 0.5 dB at 40 GHz and 0.75 dB at 67 GHz, respectively. A differential wideband amplifier and an ultra-wideband antenna are packaged and measured as practical demonstration, showing only a slight decrease in performance over the full bandwidth of interest.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115241068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539911
V. Van Kerckhoven, L. Piraux, I. Huynen
This paper presents an innovative method to synthesize nanowire-based microwave devices integrated inside a nanoporous alumina membrane. A laser treatment is used to destroy locally the template surface porosity, preventing the nanowire growth in the modified regions. We have realized a substrate integrated waveguide (SIW) in which the vertical walls consist of nanowire arrays. The waveguide can then be modified to achieve different types of microwave devices by properly placing nanowire arrays inside the SIW. The so-obtained devices combine the advantages of nanowire arrays (compactness, tunable permittivity and permeability,…) with those of substrate integrated waveguides (low losses). Our fabrication approach enables wide range of devices and we present promising results for integrated waveguide isolators.
{"title":"A Novel Laser-Assisted Fabrication Process for Nanowired Substrate Integrated Devices","authors":"V. Van Kerckhoven, L. Piraux, I. Huynen","doi":"10.23919/EUMIC.2018.8539911","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539911","url":null,"abstract":"This paper presents an innovative method to synthesize nanowire-based microwave devices integrated inside a nanoporous alumina membrane. A laser treatment is used to destroy locally the template surface porosity, preventing the nanowire growth in the modified regions. We have realized a substrate integrated waveguide (SIW) in which the vertical walls consist of nanowire arrays. The waveguide can then be modified to achieve different types of microwave devices by properly placing nanowire arrays inside the SIW. The so-obtained devices combine the advantages of nanowire arrays (compactness, tunable permittivity and permeability,…) with those of substrate integrated waveguides (low losses). Our fabrication approach enables wide range of devices and we present promising results for integrated waveguide isolators.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124300657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539865
Christopher M. Grӧtsch, S. Wagner, A. Leuther, D. Meier, I. Kallfass
Two H-band frequency multiplier MMICs, a frequency doubler and tripler, are presented. Both circuits were characterized over a frequency range of 235 − 285 GHz. The 3-dB bandwidth of both chips exceeds the measurement range of 50 GHz. Without any post-amplification the multiplier-by-3 achieves an average output power of −6 dBm at an input power of 6 dBm. The multiplier-by-two generates −3.6 dBm average at an input power of 5 dBm. Both MMICs were realized in a 35 nm gate-length InGaAs-based metamorphic HEMT technology. A comparison of simulation and measurement was conducted and shows a very good correspondence.
{"title":"Ultra-Broadband Frequency Multiplier MMICs for Communication and Radar Applications","authors":"Christopher M. Grӧtsch, S. Wagner, A. Leuther, D. Meier, I. Kallfass","doi":"10.23919/EUMIC.2018.8539865","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539865","url":null,"abstract":"Two H-band frequency multiplier MMICs, a frequency doubler and tripler, are presented. Both circuits were characterized over a frequency range of 235 − 285 GHz. The 3-dB bandwidth of both chips exceeds the measurement range of 50 GHz. Without any post-amplification the multiplier-by-3 achieves an average output power of −6 dBm at an input power of 6 dBm. The multiplier-by-two generates −3.6 dBm average at an input power of 5 dBm. Both MMICs were realized in a 35 nm gate-length InGaAs-based metamorphic HEMT technology. A comparison of simulation and measurement was conducted and shows a very good correspondence.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116856336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/eumic.2018.8539916
Jaime Casanueva Pérez, Amparo Herrera Guardado, Javier Cabo Freixedas, Juan Carlos Pérez Ambrojo
This paper presents a wideband voltage-controlled oscillator (VCO) using hybrid technology based on bipolar transistors for a new generation TTC Transponder. The VCO is based on microstrip three-pole combline bandpass filter with just one varactor diode. The bandpass filter is embedded into the feed-back loop to treat as a frequency stabilization element. The VCO delivered 4.63 dBm maximum output power at 3.4 GHz with a current consumption of 17.4 mA for a supply voltage of 3 V and it has a tuning range achieved from 600 MHz being the frequency range from 2.8 GHz to 3.4 GHz. The developed VCO with three pole combline filter is experimentally demonstrated at 3.4 GHz with a phase noise of − 126 dBc/Hz at 1 MHz offset frequency. In addition, over this frequency range, all the phase noises measured at 1 MHz are better than −118 dBc/Hz.
{"title":"A Hybrid Bipolar Wideband VCO with Linearized Tuning Behaviour for a New Generation TTC Transponder","authors":"Jaime Casanueva Pérez, Amparo Herrera Guardado, Javier Cabo Freixedas, Juan Carlos Pérez Ambrojo","doi":"10.23919/eumic.2018.8539916","DOIUrl":"https://doi.org/10.23919/eumic.2018.8539916","url":null,"abstract":"This paper presents a wideband voltage-controlled oscillator (VCO) using hybrid technology based on bipolar transistors for a new generation TTC Transponder. The VCO is based on microstrip three-pole combline bandpass filter with just one varactor diode. The bandpass filter is embedded into the feed-back loop to treat as a frequency stabilization element. The VCO delivered 4.63 dBm maximum output power at 3.4 GHz with a current consumption of 17.4 mA for a supply voltage of 3 V and it has a tuning range achieved from 600 MHz being the frequency range from 2.8 GHz to 3.4 GHz. The developed VCO with three pole combline filter is experimentally demonstrated at 3.4 GHz with a phase noise of − 126 dBc/Hz at 1 MHz offset frequency. In addition, over this frequency range, all the phase noises measured at 1 MHz are better than −118 dBc/Hz.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129419141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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