Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539887
S. Guerrieri, F. Bonani, G. Ghione
This paper presents a new approach to extract the temperature-dependent sensitivity of electron devices DC current through efficient, yet accurate, physics-based analysis. The novel technique is based on a Green's function approach, where the response of the device to lattice (ambient) temperature variations is recovered by means of the linearization of the device equations around the nominal device working point and temperature. The same Green's Functions are also used for other device variability analyses, e.g. random doping fluctuations or geometrical variations. A linear superposition of the device response to temperature variations with any other parameter variation, allows for a temperature-dependent device variability analysis, with virtually the same numerical burden as the fixed temperature one. In this paper we verify the technique against non-linearized (MonteCarlo) analyses. A metal gate FinFET is considered in two case studies: temperature-dependent deterministic variations of the fin doping concentration; temperature-dependent random workfunction variations due to metal granularity. The approach is extremely accurate up to 80 K above ambient temperature with a huge reduction in simulation time with respect to MonteCarlo approach.
{"title":"A Novel TCAD Approach to Temperature Dependent DC FinFET Variability Analysis","authors":"S. Guerrieri, F. Bonani, G. Ghione","doi":"10.23919/EUMIC.2018.8539887","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539887","url":null,"abstract":"This paper presents a new approach to extract the temperature-dependent sensitivity of electron devices DC current through efficient, yet accurate, physics-based analysis. The novel technique is based on a Green's function approach, where the response of the device to lattice (ambient) temperature variations is recovered by means of the linearization of the device equations around the nominal device working point and temperature. The same Green's Functions are also used for other device variability analyses, e.g. random doping fluctuations or geometrical variations. A linear superposition of the device response to temperature variations with any other parameter variation, allows for a temperature-dependent device variability analysis, with virtually the same numerical burden as the fixed temperature one. In this paper we verify the technique against non-linearized (MonteCarlo) analyses. A metal gate FinFET is considered in two case studies: temperature-dependent deterministic variations of the fin doping concentration; temperature-dependent random workfunction variations due to metal granularity. The approach is extremely accurate up to 80 K above ambient temperature with a huge reduction in simulation time with respect to MonteCarlo approach.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"146 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131706900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/eumc.2018.8541531
A. Piacibello, M. Pirola, V. Camarchia, C. Ramella, R. Quaglia, X. Zhou, W. Chan
This work aims at assessing the performance improvement offered by a dual-input digitally driven Doherty power amplifier (DPA) with respect to the single-input topology. To this aim, an analog DPA is designed and characterized. The equivalent digital version, which only differs by the absence of the input power divider, is also realized and analyzed. This ensures a fair comparison of the two topologies. Power-dependent input signal splitting between the main and auxiliary branches as well as adaptive phase alignment are adopted in the digital version to compensate for the back-off efficiency degradation as well as other shortcomings typically shown by traditional analog DPAs. For the first time, the performance figures of merit of the equivalent analog and digital DPAs are compared one-to-one systematically. The comparison over the 3.1-3.7 GHz range shows a superior efficiency performance of the digital DPA over the analog one, both at saturation and in back-off. Furthermore, the dual-input control also ensures higher gain and saturated output power.
{"title":"Comparison of S-band Analog and Dual-Input Digital Doherty Power Amplifiers","authors":"A. Piacibello, M. Pirola, V. Camarchia, C. Ramella, R. Quaglia, X. Zhou, W. Chan","doi":"10.23919/eumc.2018.8541531","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541531","url":null,"abstract":"This work aims at assessing the performance improvement offered by a dual-input digitally driven Doherty power amplifier (DPA) with respect to the single-input topology. To this aim, an analog DPA is designed and characterized. The equivalent digital version, which only differs by the absence of the input power divider, is also realized and analyzed. This ensures a fair comparison of the two topologies. Power-dependent input signal splitting between the main and auxiliary branches as well as adaptive phase alignment are adopted in the digital version to compensate for the back-off efficiency degradation as well as other shortcomings typically shown by traditional analog DPAs. For the first time, the performance figures of merit of the equivalent analog and digital DPAs are compared one-to-one systematically. The comparison over the 3.1-3.7 GHz range shows a superior efficiency performance of the digital DPA over the analog one, both at saturation and in back-off. Furthermore, the dual-input control also ensures higher gain and saturated output power.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125398663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/eumc.2018.8541756
Edon Derguti, E. Ture, S. Krause, D. Schwantuschke, R. Quay, O. Ambacher
In this paper the design and realization of an asymmetrical three-way (1:1:1) GaN Doherty power amplifier (DPA) operating at a center frequency of 5.4 GHz is presented. The DPA is constructed from three packaged power bars, each consisting of four GaN HEMT cells (8 fingers, 300 μm unit gate width) in 0.25 μm gate length. Performance of the realized DPA prototype is analyzed under pulsed-RF excitation ($20mu mathrm{s}$ pulse width, 10 % duty cycle) at 40 V DC drain supply voltage. The measurement results yield 48.5 dBm maximum output power, with a maximum PAE of 46 %. At 6 dB output power back-off (OPBO) the DPA demonstrates 40 % PAE whereas 35 % PAE is achieved at 9 dB OPBO.
{"title":"High-Power Asymmetrical Three-Way GaN Doherty Power Amplifier at C-Band Frequencies","authors":"Edon Derguti, E. Ture, S. Krause, D. Schwantuschke, R. Quay, O. Ambacher","doi":"10.23919/eumc.2018.8541756","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541756","url":null,"abstract":"In this paper the design and realization of an asymmetrical three-way (1:1:1) GaN Doherty power amplifier (DPA) operating at a center frequency of 5.4 GHz is presented. The DPA is constructed from three packaged power bars, each consisting of four GaN HEMT cells (8 fingers, 300 μm unit gate width) in 0.25 μm gate length. Performance of the realized DPA prototype is analyzed under pulsed-RF excitation ($20mu mathrm{s}$ pulse width, 10 % duty cycle) at 40 V DC drain supply voltage. The measurement results yield 48.5 dBm maximum output power, with a maximum PAE of 46 %. At 6 dB output power back-off (OPBO) the DPA demonstrates 40 % PAE whereas 35 % PAE is achieved at 9 dB OPBO.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126649371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/eumc.2018.8541762
Jean-Christophe Nanan, Yu-liang Dong, S. De Meyer, Damien Scatamacchia
This paper presents a LDMOS high power high gain peaking device with an optimized pre-matching network implemented in a half 10×32mm air cavity plastic package. This peaking device allows the one package Doherty solution achieved 57.5dBm peak power in the 1.805-1.88 GHz band, and >53% efficiency, >17.5dB gain with 9.9PAR WCDMA signal at 8dB OBO with a classical asymmetrical 2 ways Doherty circuit. This Doherty could be linearized at −57dBc level with 60MHz 2-carrier LTE signal.
{"title":"1-Package 500W High Efficiency LDMOS Doherty Power Amplifier","authors":"Jean-Christophe Nanan, Yu-liang Dong, S. De Meyer, Damien Scatamacchia","doi":"10.23919/eumc.2018.8541762","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541762","url":null,"abstract":"This paper presents a LDMOS high power high gain peaking device with an optimized pre-matching network implemented in a half 10×32mm air cavity plastic package. This peaking device allows the one package Doherty solution achieved 57.5dBm peak power in the 1.805-1.88 GHz band, and >53% efficiency, >17.5dB gain with 9.9PAR WCDMA signal at 8dB OBO with a classical asymmetrical 2 ways Doherty circuit. This Doherty could be linearized at −57dBc level with 60MHz 2-carrier LTE signal.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115494196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/eumic.2018.8539931
Dénes Pauka, L. Dani, Jordána Mód, Sándor Szukits, Gábor Simon, Veronika Heckmann, Z. Kozma
A major global sustainability challenge involves the management of ecosystems to ensure the provision of multiple ecosystem services. There is increasing evidence that soil organisms significantly contribute to shaping the biodiversity and functioning of plants in terrestrial ecosystems, as well as the ecological and evolutionary responses to environmental change. While still limited, knowledge about the spatial and temporal patterns of soil biodiversity and mechanistic understanding of how it regulates the structure and function of terrestrial ecosystems are growing rapidly. In this session we will be exploring a number of questions: How to integrate this new understanding into existing and novel frameworks of biodiversityfunctioning research?, How to best improve our understanding of the mechanisms that shape complex soil biological communities at different spatial and temporal scales?, How to best study the impact of soil biodiversity on plant traits in response to environmental change?, How do we most effectively integrate insights of soil biodiversity research into sustainable land management decisions?. The presentations in this workshop may include a range of approaches, methodologies and tools. These may include spatial analysis, aboveground and belowground biodiversity monitoring, functional traits and ecosystem services, decisionsupport systems, capacity development of stakeholders, local knowledge on biodiversity interactions and land management. Voluntary contributions accepted:
{"title":"Book of Abstracts","authors":"Dénes Pauka, L. Dani, Jordána Mód, Sándor Szukits, Gábor Simon, Veronika Heckmann, Z. Kozma","doi":"10.23919/eumic.2018.8539931","DOIUrl":"https://doi.org/10.23919/eumic.2018.8539931","url":null,"abstract":"A major global sustainability challenge involves the management of ecosystems to ensure the provision of multiple ecosystem services. There is increasing evidence that soil organisms significantly contribute to shaping the biodiversity and functioning of plants in terrestrial ecosystems, as well as the ecological and evolutionary responses to environmental change. While still limited, knowledge about the spatial and temporal patterns of soil biodiversity and mechanistic understanding of how it regulates the structure and function of terrestrial ecosystems are growing rapidly. In this session we will be exploring a number of questions: How to integrate this new understanding into existing and novel frameworks of biodiversityfunctioning research?, How to best improve our understanding of the mechanisms that shape complex soil biological communities at different spatial and temporal scales?, How to best study the impact of soil biodiversity on plant traits in response to environmental change?, How do we most effectively integrate insights of soil biodiversity research into sustainable land management decisions?. The presentations in this workshop may include a range of approaches, methodologies and tools. These may include spatial analysis, aboveground and belowground biodiversity monitoring, functional traits and ecosystem services, decisionsupport systems, capacity development of stakeholders, local knowledge on biodiversity interactions and land management. Voluntary contributions accepted:","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124798420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/eumc.2018.8541551
S. Riedmüller, J. Jacquet, M. Madel, C. Chang, G. Callet, S. Piotrowicz, S. Delage, J. Gruenenpuett, F. Scholz, H. Blanck
By utilizing a novel three-layer resist process, InAIN/AIN/GaN T - and T -gate high electron mobility transistors with 0.1 μm gate lengths and below have been demonstrated. This process is based on direct electron-beam lithography with a single exposure step. Furthermore, the effect of different T -gate shapes on RF power performance is reported. A T -gate shift to the source side of the Ohmic contact, results in lower gate-to-drain capacitance and in higher transistor RF transducer gain Gt.
{"title":"A Three-Layer Resist Process for T - and T -Gates in High Electron Mobility Transistor Fabrication","authors":"S. Riedmüller, J. Jacquet, M. Madel, C. Chang, G. Callet, S. Piotrowicz, S. Delage, J. Gruenenpuett, F. Scholz, H. Blanck","doi":"10.23919/eumc.2018.8541551","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541551","url":null,"abstract":"By utilizing a novel three-layer resist process, InAIN/AIN/GaN T - and T -gate high electron mobility transistors with 0.1 μm gate lengths and below have been demonstrated. This process is based on direct electron-beam lithography with a single exposure step. Furthermore, the effect of different T -gate shapes on RF power performance is reported. A T -gate shift to the source side of the Ohmic contact, results in lower gate-to-drain capacitance and in higher transistor RF transducer gain Gt.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"145 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124657625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/eumc.2018.8541361
B. Bunz, H. Sledzik, P. Schuh, M. Oppermann
A broadband power amplifier MMIC based on AIGaN/GaN HEMT technology from 4 GHz to 18 GHz was designed, fabricated and measured. Potential applications for this type of power amplifier are mainly electronic warfare (EW) and communication systems. Output power levels of more than 2 W are measured, with associated PAE levels of 14 to 25 %.
{"title":"4-18 GHz AIGaN/GaN Based Distributed Power Amplifier MMIC","authors":"B. Bunz, H. Sledzik, P. Schuh, M. Oppermann","doi":"10.23919/eumc.2018.8541361","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541361","url":null,"abstract":"A broadband power amplifier MMIC based on AIGaN/GaN HEMT technology from 4 GHz to 18 GHz was designed, fabricated and measured. Potential applications for this type of power amplifier are mainly electronic warfare (EW) and communication systems. Output power levels of more than 2 W are measured, with associated PAE levels of 14 to 25 %.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126658934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539961
B. Schwitter, A. Parker, S. Mahon, M. Heimlich
Transient gate resistance thermometry is employed to characterise the time domain response of a GaAs pHEMT under pulsed conditions. Self heating is observed from hundreds of nanoseconds to hundreds of milliseconds. A TFR-heated test structure is used to develop a 3-D finite-element thermal model that scales with power density and gate periphery. Thermal coupling between gate fingers in a multi-finger device is measured, and then further investigated via simulation. The model's application to thermal optimisation of devices and circuits is discussed.
{"title":"Characterisation of GaAs pHEMT Transient Thermal Response","authors":"B. Schwitter, A. Parker, S. Mahon, M. Heimlich","doi":"10.23919/EUMIC.2018.8539961","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539961","url":null,"abstract":"Transient gate resistance thermometry is employed to characterise the time domain response of a GaAs pHEMT under pulsed conditions. Self heating is observed from hundreds of nanoseconds to hundreds of milliseconds. A TFR-heated test structure is used to develop a 3-D finite-element thermal model that scales with power density and gate periphery. Thermal coupling between gate fingers in a multi-finger device is measured, and then further investigated via simulation. The model's application to thermal optimisation of devices and circuits is discussed.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131848688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539895
Eduardo Oreia-Gigorro, Emilio Delgado Pascual, Juan José Sánchez-Martínez, María Luz Gil-Heras, Virginia Bueno-Fernández, Antonio Bódalo-Márquez, J. Grajal
A 6–18 GHz high power amplifier (HPA) design in GaN on SiC technology is presented. This power amplifier consists of a two stage corporate amplifier. It has been designed at Indra Sistemas and fabricated on a European foundry using a 0.25 $mu$ m process. This HPA exhibits an averaged output power of 39.2 dBm with a mean gain of 11 dB in saturation and a 24.5% maximum power added efficiency in pulse mode operation.
提出了一种基于GaN on SiC技术的6 - 18ghz高功率放大器的设计方案。该功率放大器由两级联合放大器组成。它是在Indra Sistemas设计的，并在一家欧洲铸造厂使用0.25美元的工艺制造的。该HPA的平均输出功率为39.2 dBm，饱和时的平均增益为11 dB，脉冲模式工作时的最大功率增加效率为24.5%。
{"title":"A 6–18 GHz GaN on SiC High Power Amplifier MMIC for Electronic Warfare","authors":"Eduardo Oreia-Gigorro, Emilio Delgado Pascual, Juan José Sánchez-Martínez, María Luz Gil-Heras, Virginia Bueno-Fernández, Antonio Bódalo-Márquez, J. Grajal","doi":"10.23919/EUMIC.2018.8539895","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539895","url":null,"abstract":"A 6–18 GHz high power amplifier (HPA) design in GaN on SiC technology is presented. This power amplifier consists of a two stage corporate amplifier. It has been designed at Indra Sistemas and fabricated on a European foundry using a 0.25 $mu$ m process. This HPA exhibits an averaged output power of 39.2 dBm with a mean gain of 11 dB in saturation and a 24.5% maximum power added efficiency in pulse mode operation.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"164 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134377048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/eumc.2018.8541651
S. Koziel, A. Bekasiewicz
The paper proposes a novel three-stage framework for rapid and reliable design optimization of complex impedance matching transformers for energy harvesting applications. Our approach involves inverse and forward surrogate modeling techniques. The inverse model is utilized to obtain a good initial transformer dimensions at the equivalent network modeling level. The forward surrogates (here, space mapping ones) permit rapid design closure at the full-wave EM simulation modeling level. The proposed methodology is demonstrated using a four-section compact transformer for energy harvesting applications. The circuit dimensions are scaled within wide ranges of the load impedance magnitude and phase (from 30 to 130 ohm and −26.5 to 26.5 degrees, respectively) at low computational cost corresponding to up to three EM analyses of the transformer structure. Reliability of the framework is validated through comprehensive numerical experiments as well as application case studies. The latter are provided to indicate that appropriate transformer design is critical for performance improvement of the rectifier circuits, both in terms of operational bandwidth and matching.
{"title":"Rapid Design of Compact Impedance Matching Transformers for Energy Harvesting Applications by Means of Inverse and Forward Surrogates","authors":"S. Koziel, A. Bekasiewicz","doi":"10.23919/eumc.2018.8541651","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541651","url":null,"abstract":"The paper proposes a novel three-stage framework for rapid and reliable design optimization of complex impedance matching transformers for energy harvesting applications. Our approach involves inverse and forward surrogate modeling techniques. The inverse model is utilized to obtain a good initial transformer dimensions at the equivalent network modeling level. The forward surrogates (here, space mapping ones) permit rapid design closure at the full-wave EM simulation modeling level. The proposed methodology is demonstrated using a four-section compact transformer for energy harvesting applications. The circuit dimensions are scaled within wide ranges of the load impedance magnitude and phase (from 30 to 130 ohm and −26.5 to 26.5 degrees, respectively) at low computational cost corresponding to up to three EM analyses of the transformer structure. Reliability of the framework is validated through comprehensive numerical experiments as well as application case studies. The latter are provided to indicate that appropriate transformer design is critical for performance improvement of the rectifier circuits, both in terms of operational bandwidth and matching.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133113874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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