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2018 13th European Microwave Integrated Circuits Conference (EuMIC)最新文献

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A Novel TCAD Approach to Temperature Dependent DC FinFET Variability Analysis 温度相关直流FinFET可变性分析的TCAD新方法
Pub Date : 2018-09-01 DOI: 10.23919/EUMIC.2018.8539887
S. Guerrieri, F. Bonani, G. Ghione
This paper presents a new approach to extract the temperature-dependent sensitivity of electron devices DC current through efficient, yet accurate, physics-based analysis. The novel technique is based on a Green's function approach, where the response of the device to lattice (ambient) temperature variations is recovered by means of the linearization of the device equations around the nominal device working point and temperature. The same Green's Functions are also used for other device variability analyses, e.g. random doping fluctuations or geometrical variations. A linear superposition of the device response to temperature variations with any other parameter variation, allows for a temperature-dependent device variability analysis, with virtually the same numerical burden as the fixed temperature one. In this paper we verify the technique against non-linearized (MonteCarlo) analyses. A metal gate FinFET is considered in two case studies: temperature-dependent deterministic variations of the fin doping concentration; temperature-dependent random workfunction variations due to metal granularity. The approach is extremely accurate up to 80 K above ambient temperature with a huge reduction in simulation time with respect to MonteCarlo approach.
本文提出了一种新的方法,通过有效而准确的物理分析来提取电子器件直流电流的温度依赖性灵敏度。该新技术基于格林函数方法,其中器件对晶格(环境)温度变化的响应通过器件方程在标称器件工作点和温度周围的线性化来恢复。同样的格林函数也用于其他器件可变性分析,例如随机掺杂波动或几何变化。器件对温度变化的响应与任何其他参数变化的线性叠加,允许温度相关的器件可变性分析,几乎与固定温度相同的数值负担。在本文中,我们对非线性(MonteCarlo)分析验证了该技术。在两个案例研究中考虑了金属栅极FinFET:翅片掺杂浓度的温度依赖性确定性变化;由金属粒度引起的温度依赖性随机工作函数变化。与蒙特卡罗方法相比,该方法在高于环境温度80 K的情况下非常精确,并且大大减少了模拟时间。
{"title":"A Novel TCAD Approach to Temperature Dependent DC FinFET Variability Analysis","authors":"S. Guerrieri, F. Bonani, G. Ghione","doi":"10.23919/EUMIC.2018.8539887","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539887","url":null,"abstract":"This paper presents a new approach to extract the temperature-dependent sensitivity of electron devices DC current through efficient, yet accurate, physics-based analysis. The novel technique is based on a Green's function approach, where the response of the device to lattice (ambient) temperature variations is recovered by means of the linearization of the device equations around the nominal device working point and temperature. The same Green's Functions are also used for other device variability analyses, e.g. random doping fluctuations or geometrical variations. A linear superposition of the device response to temperature variations with any other parameter variation, allows for a temperature-dependent device variability analysis, with virtually the same numerical burden as the fixed temperature one. In this paper we verify the technique against non-linearized (MonteCarlo) analyses. A metal gate FinFET is considered in two case studies: temperature-dependent deterministic variations of the fin doping concentration; temperature-dependent random workfunction variations due to metal granularity. The approach is extremely accurate up to 80 K above ambient temperature with a huge reduction in simulation time with respect to MonteCarlo approach.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"146 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131706900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Comparison of S-band Analog and Dual-Input Digital Doherty Power Amplifiers s波段模拟和双输入数字多尔蒂功率放大器的比较
Pub Date : 2018-09-01 DOI: 10.23919/eumc.2018.8541531
A. Piacibello, M. Pirola, V. Camarchia, C. Ramella, R. Quaglia, X. Zhou, W. Chan
This work aims at assessing the performance improvement offered by a dual-input digitally driven Doherty power amplifier (DPA) with respect to the single-input topology. To this aim, an analog DPA is designed and characterized. The equivalent digital version, which only differs by the absence of the input power divider, is also realized and analyzed. This ensures a fair comparison of the two topologies. Power-dependent input signal splitting between the main and auxiliary branches as well as adaptive phase alignment are adopted in the digital version to compensate for the back-off efficiency degradation as well as other shortcomings typically shown by traditional analog DPAs. For the first time, the performance figures of merit of the equivalent analog and digital DPAs are compared one-to-one systematically. The comparison over the 3.1-3.7 GHz range shows a superior efficiency performance of the digital DPA over the analog one, both at saturation and in back-off. Furthermore, the dual-input control also ensures higher gain and saturated output power.
这项工作旨在评估双输入数字驱动Doherty功率放大器(DPA)相对于单输入拓扑所提供的性能改进。为此,设计并表征了模拟DPA。本文还实现并分析了等效的数字版本,其不同之处在于没有输入分压器。这确保了两种拓扑的公平比较。在数字版本中,采用功率相关的主辅助支路输入信号分割以及自适应相位对准,以弥补传统模拟dpa通常显示的退退效率下降以及其他缺点。首次系统地对等效模拟和数字dpa的性能指标进行了一对一的比较。在3.1-3.7 GHz范围内的比较表明,数字DPA在饱和和回退情况下都优于模拟DPA。此外,双输入控制还保证了更高的增益和饱和输出功率。
{"title":"Comparison of S-band Analog and Dual-Input Digital Doherty Power Amplifiers","authors":"A. Piacibello, M. Pirola, V. Camarchia, C. Ramella, R. Quaglia, X. Zhou, W. Chan","doi":"10.23919/eumc.2018.8541531","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541531","url":null,"abstract":"This work aims at assessing the performance improvement offered by a dual-input digitally driven Doherty power amplifier (DPA) with respect to the single-input topology. To this aim, an analog DPA is designed and characterized. The equivalent digital version, which only differs by the absence of the input power divider, is also realized and analyzed. This ensures a fair comparison of the two topologies. Power-dependent input signal splitting between the main and auxiliary branches as well as adaptive phase alignment are adopted in the digital version to compensate for the back-off efficiency degradation as well as other shortcomings typically shown by traditional analog DPAs. For the first time, the performance figures of merit of the equivalent analog and digital DPAs are compared one-to-one systematically. The comparison over the 3.1-3.7 GHz range shows a superior efficiency performance of the digital DPA over the analog one, both at saturation and in back-off. Furthermore, the dual-input control also ensures higher gain and saturated output power.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125398663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High-Power Asymmetrical Three-Way GaN Doherty Power Amplifier at C-Band Frequencies c波段高功率非对称三向GaN多尔蒂功率放大器
Pub Date : 2018-09-01 DOI: 10.23919/eumc.2018.8541756
Edon Derguti, E. Ture, S. Krause, D. Schwantuschke, R. Quay, O. Ambacher
In this paper the design and realization of an asymmetrical three-way (1:1:1) GaN Doherty power amplifier (DPA) operating at a center frequency of 5.4 GHz is presented. The DPA is constructed from three packaged power bars, each consisting of four GaN HEMT cells (8 fingers, 300 μm unit gate width) in 0.25 μm gate length. Performance of the realized DPA prototype is analyzed under pulsed-RF excitation ($20mu mathrm{s}$ pulse width, 10 % duty cycle) at 40 V DC drain supply voltage. The measurement results yield 48.5 dBm maximum output power, with a maximum PAE of 46 %. At 6 dB output power back-off (OPBO) the DPA demonstrates 40 % PAE whereas 35 % PAE is achieved at 9 dB OPBO.
本文设计并实现了一种工作在5.4 GHz中心频率的非对称三路(1:1:1)GaN Doherty功率放大器(DPA)。DPA由三个封装的电源棒组成,每个电源棒由四个GaN HEMT电池(8指,300 μm单位栅极宽度)组成,栅极长度为0.25 μm。在40 V直流漏极电源电压下,分析了所实现的DPA样机在脉冲射频激励(脉冲宽度为$20mu mathm {s}$,占空比为10%)下的性能。测量结果显示,最大输出功率为48.5 dBm,最大PAE为46%。在6 dB输出功率回退(OPBO)时,DPA显示40%的PAE,而在9 dB OPBO时实现35%的PAE。
{"title":"High-Power Asymmetrical Three-Way GaN Doherty Power Amplifier at C-Band Frequencies","authors":"Edon Derguti, E. Ture, S. Krause, D. Schwantuschke, R. Quay, O. Ambacher","doi":"10.23919/eumc.2018.8541756","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541756","url":null,"abstract":"In this paper the design and realization of an asymmetrical three-way (1:1:1) GaN Doherty power amplifier (DPA) operating at a center frequency of 5.4 GHz is presented. The DPA is constructed from three packaged power bars, each consisting of four GaN HEMT cells (8 fingers, 300 μm unit gate width) in 0.25 μm gate length. Performance of the realized DPA prototype is analyzed under pulsed-RF excitation ($20mu mathrm{s}$ pulse width, 10 % duty cycle) at 40 V DC drain supply voltage. The measurement results yield 48.5 dBm maximum output power, with a maximum PAE of 46 %. At 6 dB output power back-off (OPBO) the DPA demonstrates 40 % PAE whereas 35 % PAE is achieved at 9 dB OPBO.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126649371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
1-Package 500W High Efficiency LDMOS Doherty Power Amplifier 1封装500W高效LDMOS多尔蒂功率放大器
Pub Date : 2018-09-01 DOI: 10.23919/eumc.2018.8541762
Jean-Christophe Nanan, Yu-liang Dong, S. De Meyer, Damien Scatamacchia
This paper presents a LDMOS high power high gain peaking device with an optimized pre-matching network implemented in a half 10×32mm air cavity plastic package. This peaking device allows the one package Doherty solution achieved 57.5dBm peak power in the 1.805-1.88 GHz band, and >53% efficiency, >17.5dB gain with 9.9PAR WCDMA signal at 8dB OBO with a classical asymmetrical 2 ways Doherty circuit. This Doherty could be linearized at −57dBc level with 60MHz 2-carrier LTE signal.
本文提出了一种LDMOS大功率高增益峰值器件,该器件具有优化的预匹配网络,实现在半10×32mm空腔塑料封装中。该调峰器件允许单封装Doherty解决方案在1.805-1.88 GHz频段实现57.5dBm峰值功率,在8dB OBO、9.9PAR的WCDMA信号下,使用经典的非对称2路Doherty电路,实现>53%的效率和>17.5dB增益。该Doherty可以在60MHz 2载波LTE信号下在- 57dBc电平线性化。
{"title":"1-Package 500W High Efficiency LDMOS Doherty Power Amplifier","authors":"Jean-Christophe Nanan, Yu-liang Dong, S. De Meyer, Damien Scatamacchia","doi":"10.23919/eumc.2018.8541762","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541762","url":null,"abstract":"This paper presents a LDMOS high power high gain peaking device with an optimized pre-matching network implemented in a half 10×32mm air cavity plastic package. This peaking device allows the one package Doherty solution achieved 57.5dBm peak power in the 1.805-1.88 GHz band, and >53% efficiency, >17.5dB gain with 9.9PAR WCDMA signal at 8dB OBO with a classical asymmetrical 2 ways Doherty circuit. This Doherty could be linearized at −57dBc level with 60MHz 2-carrier LTE signal.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115494196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Book of Abstracts 摘要书
Pub Date : 2018-09-01 DOI: 10.23919/eumic.2018.8539931
Dénes Pauka, L. Dani, Jordána Mód, Sándor Szukits, Gábor Simon, Veronika Heckmann, Z. Kozma
A major global sustainability challenge involves the management of ecosystems to ensure the provision of multiple ecosystem services. There is increasing evidence that soil organisms significantly contribute to shaping the biodiversity and functioning of plants in terrestrial ecosystems, as well as the ecological and evolutionary responses to environmental change. While still limited, knowledge about the spatial and temporal patterns of soil biodiversity and mechanistic understanding of how it regulates the structure and function of terrestrial ecosystems are growing rapidly. In this session we will be exploring a number of questions: How to integrate this new understanding into existing and novel frameworks of biodiversityfunctioning research?, How to best improve our understanding of the mechanisms that shape complex soil biological communities at different spatial and temporal scales?, How to best study the impact of soil biodiversity on plant traits in response to environmental change?, How do we most effectively integrate insights of soil biodiversity research into sustainable land management decisions?. The presentations in this workshop may include a range of approaches, methodologies and tools. These may include spatial analysis, aboveground and belowground biodiversity monitoring, functional traits and ecosystem services, decisionsupport systems, capacity development of stakeholders, local knowledge on biodiversity interactions and land management. Voluntary contributions accepted:
全球可持续性面临的一项重大挑战涉及对生态系统的管理,以确保提供多种生态系统服务。越来越多的证据表明,土壤生物在塑造陆地生态系统中植物的生物多样性和功能,以及对环境变化的生态和进化反应方面发挥着重要作用。尽管土壤生物多样性的时空格局及其调控陆地生态系统结构和功能的机制的认识仍然有限,但正在迅速增长。在本次会议上,我们将探讨一些问题:如何将这种新的理解整合到现有的和新的生物多样性功能研究框架中?如何最好地提高我们对不同时空尺度下复杂土壤生物群落形成机制的理解?如何更好地研究土壤生物多样性对植物性状的影响以应对环境变化?我们如何最有效地将土壤生物多样性研究的见解纳入可持续土地管理决策?本次研讨会的演讲可能包括一系列的方法、方法论和工具。其中可能包括空间分析、地上和地下生物多样性监测、功能特征和生态系统服务、决策支持系统、利益相关者的能力发展、关于生物多样性相互作用和土地管理的地方知识。接受自愿捐款:
{"title":"Book of Abstracts","authors":"Dénes Pauka, L. Dani, Jordána Mód, Sándor Szukits, Gábor Simon, Veronika Heckmann, Z. Kozma","doi":"10.23919/eumic.2018.8539931","DOIUrl":"https://doi.org/10.23919/eumic.2018.8539931","url":null,"abstract":"A major global sustainability challenge involves the management of ecosystems to ensure the provision of multiple ecosystem services. There is increasing evidence that soil organisms significantly contribute to shaping the biodiversity and functioning of plants in terrestrial ecosystems, as well as the ecological and evolutionary responses to environmental change. While still limited, knowledge about the spatial and temporal patterns of soil biodiversity and mechanistic understanding of how it regulates the structure and function of terrestrial ecosystems are growing rapidly. In this session we will be exploring a number of questions: How to integrate this new understanding into existing and novel frameworks of biodiversityfunctioning research?, How to best improve our understanding of the mechanisms that shape complex soil biological communities at different spatial and temporal scales?, How to best study the impact of soil biodiversity on plant traits in response to environmental change?, How do we most effectively integrate insights of soil biodiversity research into sustainable land management decisions?. The presentations in this workshop may include a range of approaches, methodologies and tools. These may include spatial analysis, aboveground and belowground biodiversity monitoring, functional traits and ecosystem services, decisionsupport systems, capacity development of stakeholders, local knowledge on biodiversity interactions and land management. Voluntary contributions accepted:","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124798420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A Three-Layer Resist Process for T - and T -Gates in High Electron Mobility Transistor Fabrication 高电子迁移率晶体管中T栅极和T栅极的三层阻化工艺
Pub Date : 2018-09-01 DOI: 10.23919/eumc.2018.8541551
S. Riedmüller, J. Jacquet, M. Madel, C. Chang, G. Callet, S. Piotrowicz, S. Delage, J. Gruenenpuett, F. Scholz, H. Blanck
By utilizing a novel three-layer resist process, InAIN/AIN/GaN T - and T -gate high electron mobility transistors with 0.1 μm gate lengths and below have been demonstrated. This process is based on direct electron-beam lithography with a single exposure step. Furthermore, the effect of different T -gate shapes on RF power performance is reported. A T -gate shift to the source side of the Ohmic contact, results in lower gate-to-drain capacitance and in higher transistor RF transducer gain Gt.
利用一种新颖的三层抗蚀剂工艺,制备了栅极长度小于0.1 μm的InAIN/AIN/GaN T栅极和T栅极高电子迁移率晶体管。该工艺基于单曝光步骤的直接电子束光刻。此外,还报道了不同T栅极形状对射频功率性能的影响。将T栅极移到欧姆触点的源侧,可以降低栅极漏极电容,提高晶体管射频换能器增益Gt。
{"title":"A Three-Layer Resist Process for T - and T -Gates in High Electron Mobility Transistor Fabrication","authors":"S. Riedmüller, J. Jacquet, M. Madel, C. Chang, G. Callet, S. Piotrowicz, S. Delage, J. Gruenenpuett, F. Scholz, H. Blanck","doi":"10.23919/eumc.2018.8541551","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541551","url":null,"abstract":"By utilizing a novel three-layer resist process, InAIN/AIN/GaN T - and T -gate high electron mobility transistors with 0.1 μm gate lengths and below have been demonstrated. This process is based on direct electron-beam lithography with a single exposure step. Furthermore, the effect of different T -gate shapes on RF power performance is reported. A T -gate shift to the source side of the Ohmic contact, results in lower gate-to-drain capacitance and in higher transistor RF transducer gain Gt.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"145 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124657625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
4-18 GHz AIGaN/GaN Based Distributed Power Amplifier MMIC 4-18 GHz基于AIGaN/GaN的分布式功率放大器
Pub Date : 2018-09-01 DOI: 10.23919/eumc.2018.8541361
B. Bunz, H. Sledzik, P. Schuh, M. Oppermann
A broadband power amplifier MMIC based on AIGaN/GaN HEMT technology from 4 GHz to 18 GHz was designed, fabricated and measured. Potential applications for this type of power amplifier are mainly electronic warfare (EW) and communication systems. Output power levels of more than 2 W are measured, with associated PAE levels of 14 to 25 %.
设计、制作并测量了一种基于AIGaN/GaN HEMT技术的4 GHz ~ 18 GHz宽带功率放大器MMIC。这种功率放大器的潜在应用主要是电子战(EW)和通信系统。测量输出功率水平大于2w,相关PAE水平为14%至25%。
{"title":"4-18 GHz AIGaN/GaN Based Distributed Power Amplifier MMIC","authors":"B. Bunz, H. Sledzik, P. Schuh, M. Oppermann","doi":"10.23919/eumc.2018.8541361","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541361","url":null,"abstract":"A broadband power amplifier MMIC based on AIGaN/GaN HEMT technology from 4 GHz to 18 GHz was designed, fabricated and measured. Potential applications for this type of power amplifier are mainly electronic warfare (EW) and communication systems. Output power levels of more than 2 W are measured, with associated PAE levels of 14 to 25 %.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126658934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterisation of GaAs pHEMT Transient Thermal Response GaAs pHEMT瞬态热响应的表征
Pub Date : 2018-09-01 DOI: 10.23919/EUMIC.2018.8539961
B. Schwitter, A. Parker, S. Mahon, M. Heimlich
Transient gate resistance thermometry is employed to characterise the time domain response of a GaAs pHEMT under pulsed conditions. Self heating is observed from hundreds of nanoseconds to hundreds of milliseconds. A TFR-heated test structure is used to develop a 3-D finite-element thermal model that scales with power density and gate periphery. Thermal coupling between gate fingers in a multi-finger device is measured, and then further investigated via simulation. The model's application to thermal optimisation of devices and circuits is discussed.
采用瞬态栅极电阻测温法对脉冲条件下GaAs pHEMT的时域响应进行了表征。自加热时间从几百纳秒到几百毫秒不等。采用tfr加热测试结构,建立了随功率密度和栅极外围缩放的三维有限元热模型。对多指器件中门指之间的热耦合进行了测量,并通过仿真进一步研究。讨论了该模型在器件和电路热优化中的应用。
{"title":"Characterisation of GaAs pHEMT Transient Thermal Response","authors":"B. Schwitter, A. Parker, S. Mahon, M. Heimlich","doi":"10.23919/EUMIC.2018.8539961","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539961","url":null,"abstract":"Transient gate resistance thermometry is employed to characterise the time domain response of a GaAs pHEMT under pulsed conditions. Self heating is observed from hundreds of nanoseconds to hundreds of milliseconds. A TFR-heated test structure is used to develop a 3-D finite-element thermal model that scales with power density and gate periphery. Thermal coupling between gate fingers in a multi-finger device is measured, and then further investigated via simulation. The model's application to thermal optimisation of devices and circuits is discussed.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131848688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A 6–18 GHz GaN on SiC High Power Amplifier MMIC for Electronic Warfare 用于电子战的6-18 GHz GaN on SiC高功率放大器MMIC
Pub Date : 2018-09-01 DOI: 10.23919/EUMIC.2018.8539895
Eduardo Oreia-Gigorro, Emilio Delgado Pascual, Juan José Sánchez-Martínez, María Luz Gil-Heras, Virginia Bueno-Fernández, Antonio Bódalo-Márquez, J. Grajal
A 6–18 GHz high power amplifier (HPA) design in GaN on SiC technology is presented. This power amplifier consists of a two stage corporate amplifier. It has been designed at Indra Sistemas and fabricated on a European foundry using a 0.25 $mu$ m process. This HPA exhibits an averaged output power of 39.2 dBm with a mean gain of 11 dB in saturation and a 24.5% maximum power added efficiency in pulse mode operation.
提出了一种基于GaN on SiC技术的6 - 18ghz高功率放大器的设计方案。该功率放大器由两级联合放大器组成。它是在Indra Sistemas设计的,并在一家欧洲铸造厂使用0.25美元的工艺制造的。该HPA的平均输出功率为39.2 dBm,饱和时的平均增益为11 dB,脉冲模式工作时的最大功率增加效率为24.5%。
{"title":"A 6–18 GHz GaN on SiC High Power Amplifier MMIC for Electronic Warfare","authors":"Eduardo Oreia-Gigorro, Emilio Delgado Pascual, Juan José Sánchez-Martínez, María Luz Gil-Heras, Virginia Bueno-Fernández, Antonio Bódalo-Márquez, J. Grajal","doi":"10.23919/EUMIC.2018.8539895","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539895","url":null,"abstract":"A 6–18 GHz high power amplifier (HPA) design in GaN on SiC technology is presented. This power amplifier consists of a two stage corporate amplifier. It has been designed at Indra Sistemas and fabricated on a European foundry using a 0.25 $mu$ m process. This HPA exhibits an averaged output power of 39.2 dBm with a mean gain of 11 dB in saturation and a 24.5% maximum power added efficiency in pulse mode operation.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"164 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134377048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Rapid Design of Compact Impedance Matching Transformers for Energy Harvesting Applications by Means of Inverse and Forward Surrogates 正、逆替代快速设计能量采集用紧凑阻抗匹配变压器
Pub Date : 2018-09-01 DOI: 10.23919/eumc.2018.8541651
S. Koziel, A. Bekasiewicz
The paper proposes a novel three-stage framework for rapid and reliable design optimization of complex impedance matching transformers for energy harvesting applications. Our approach involves inverse and forward surrogate modeling techniques. The inverse model is utilized to obtain a good initial transformer dimensions at the equivalent network modeling level. The forward surrogates (here, space mapping ones) permit rapid design closure at the full-wave EM simulation modeling level. The proposed methodology is demonstrated using a four-section compact transformer for energy harvesting applications. The circuit dimensions are scaled within wide ranges of the load impedance magnitude and phase (from 30 to 130 ohm and −26.5 to 26.5 degrees, respectively) at low computational cost corresponding to up to three EM analyses of the transformer structure. Reliability of the framework is validated through comprehensive numerical experiments as well as application case studies. The latter are provided to indicate that appropriate transformer design is critical for performance improvement of the rectifier circuits, both in terms of operational bandwidth and matching.
本文提出了一种新的三阶段框架,用于能量收集应用的复杂阻抗匹配变压器的快速可靠的设计优化。我们的方法包括反向和正向代理建模技术。利用逆模型在等效网络建模层面上获得了较好的初始变压器尺寸。正演代理(这里是空间映射代理)允许在全波电磁模拟建模级别快速完成设计。所提出的方法是用一个四节紧凑型变压器用于能量收集应用。电路尺寸在负载阻抗大小和相位(分别从30到130欧姆和- 26.5到26.5度)的宽范围内缩放,计算成本低,相当于变压器结构的三次电磁分析。通过综合数值实验和应用实例验证了该框架的可靠性。后者的提供表明,适当的变压器设计是关键的整流电路的性能改进,无论是在工作带宽和匹配方面。
{"title":"Rapid Design of Compact Impedance Matching Transformers for Energy Harvesting Applications by Means of Inverse and Forward Surrogates","authors":"S. Koziel, A. Bekasiewicz","doi":"10.23919/eumc.2018.8541651","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541651","url":null,"abstract":"The paper proposes a novel three-stage framework for rapid and reliable design optimization of complex impedance matching transformers for energy harvesting applications. Our approach involves inverse and forward surrogate modeling techniques. The inverse model is utilized to obtain a good initial transformer dimensions at the equivalent network modeling level. The forward surrogates (here, space mapping ones) permit rapid design closure at the full-wave EM simulation modeling level. The proposed methodology is demonstrated using a four-section compact transformer for energy harvesting applications. The circuit dimensions are scaled within wide ranges of the load impedance magnitude and phase (from 30 to 130 ohm and −26.5 to 26.5 degrees, respectively) at low computational cost corresponding to up to three EM analyses of the transformer structure. Reliability of the framework is validated through comprehensive numerical experiments as well as application case studies. The latter are provided to indicate that appropriate transformer design is critical for performance improvement of the rectifier circuits, both in terms of operational bandwidth and matching.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133113874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
2018 13th European Microwave Integrated Circuits Conference (EuMIC)
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