Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539934
M. Sadegh Dadash, S. Bonen, Utku Alakusu, D. Harame, S. Voinigescu
The high frequency performance of fully wired 22nm FDSOI n- and p- MOSFETs was measured for the first time up to 170 GHz and 125 °C. Record MAG of 8 and 7 dB, respectively, is reported for n- and p-MOSFETs at 170 GHz, higher than for any other MOSFET technology, and comparable or higher than that of the best SiGe HBTs. Moreover, gm, MAG, fT, and fMAX improve monotonically as the gate length is reduced from 80 to 20 nm, and degrade by only 10-15% from 25 to 125 °C. Novel 4-terminal varactors and series-stacked n-MOSFET cascodes with back-gate control were also characterized to assess their application in VCOs, power amplifiers, single-transistor mixers and modulators. An output power of 14 dBm with 12% peak PAE and 24% drain efficiency were measured for 3- and 4-stack cascode test structures at 80 GHz, without any output matching network.
{"title":"DC-170 GHz Characterization of 22nm FDSOI Technology for Radar Sensor Applications","authors":"M. Sadegh Dadash, S. Bonen, Utku Alakusu, D. Harame, S. Voinigescu","doi":"10.23919/EUMIC.2018.8539934","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539934","url":null,"abstract":"The high frequency performance of fully wired 22nm FDSOI n- and p- MOSFETs was measured for the first time up to 170 GHz and 125 °C. Record MAG of 8 and 7 dB, respectively, is reported for n- and p-MOSFETs at 170 GHz, higher than for any other MOSFET technology, and comparable or higher than that of the best SiGe HBTs. Moreover, gm, MAG, fT, and fMAX improve monotonically as the gate length is reduced from 80 to 20 nm, and degrade by only 10-15% from 25 to 125 °C. Novel 4-terminal varactors and series-stacked n-MOSFET cascodes with back-gate control were also characterized to assess their application in VCOs, power amplifiers, single-transistor mixers and modulators. An output power of 14 dBm with 12% peak PAE and 24% drain efficiency were measured for 3- and 4-stack cascode test structures at 80 GHz, without any output matching network.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122256182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/eumc.2018.8541807
Q. Xiao
This paper discusses models and measurements of bond wire interconnects in Quad-Flat No-lead (QFN) packages. A bond wire interconnect between a 3 mm, 14-lead QFN lead frame and a GaAs chip is used as an example to demonstrate the modelling and measurement process. Measurement results are compared with extracted models and electromagnetic (EM) simulations to verify model and simulation accuracy. Based on the extracted simplified model, theoretical bandwidth limitations of bond wire interconnects are discussed.
{"title":"Characterization of Bond Wire Interconnects in QFN Packages","authors":"Q. Xiao","doi":"10.23919/eumc.2018.8541807","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541807","url":null,"abstract":"This paper discusses models and measurements of bond wire interconnects in Quad-Flat No-lead (QFN) packages. A bond wire interconnect between a 3 mm, 14-lead QFN lead frame and a GaAs chip is used as an example to demonstrate the modelling and measurement process. Measurement results are compared with extracted models and electromagnetic (EM) simulations to verify model and simulation accuracy. Based on the extracted simplified model, theoretical bandwidth limitations of bond wire interconnects are discussed.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125096007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/eumic.2018.8539860
G. Castillo
Las profesoras de la Universidad Complutense de Madrid, Eva Aladro y Paula Requeijo, han coordinado una obra ineludible, actual y sumamente interesante, sobre la comunicación y el marketing político en España, a partir del fin del bipartidismo tradicional. En ella, profesores e investigadores de la Universidad Complutense de Madrid y la Universidad de Sevilla analizan la comunicación de los grandes partidos nacionales en el nuevo escenario: desde el papel protagonista que ha cobrado el infoentretenimiento, hasta la centralita de las redes sociales, pasando por los debates electorales televisados o la representación de la mujer política.
马德里康普卢腾斯大学(computense university of Madrid)的教授伊娃·阿德罗(Eva Aladro)和Paula Requeijo协调了一项不可避免的、当前的、非常有趣的工作，内容是关于西班牙传统两党主义结束后的沟通和政治营销。,马德里康普鲁坦斯大学教师和研究人员分析和塞维利亚大学提交来文时大国家党在新的场景:从主角作用已infoentretenimiento、直到交换机的选举辩论的社交网络,通过电视台或妇女政治代表权。
{"title":"Madrid 2018","authors":"G. Castillo","doi":"10.23919/eumic.2018.8539860","DOIUrl":"https://doi.org/10.23919/eumic.2018.8539860","url":null,"abstract":"Las profesoras de la Universidad Complutense de Madrid, Eva Aladro y Paula Requeijo, han coordinado una obra ineludible, actual y sumamente interesante, sobre la comunicación y el marketing político en España, a partir del fin del bipartidismo tradicional. En ella, profesores e investigadores de la Universidad Complutense de Madrid y la Universidad de Sevilla analizan la comunicación de los grandes partidos nacionales en el nuevo escenario: desde el papel protagonista que ha cobrado el infoentretenimiento, hasta la centralita de las redes sociales, pasando por los debates electorales televisados o la representación de la mujer política.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126758119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539966
F. van Raay, D. Schwantuschke, A. Leuther, P. Brückner, D. Peschel, R. Quay, M. Schlechtweg, O. Ambacher
An AlGaN/GaN HEMT- and an InAlAs/lnGaAs mHEMT technology, both with a gate-length of 100 nm, are investigated w.r.t. state dependency vs. average gate and drain voltages, and low-frequency (LF) dispersion, and the separation of thermal effects is demonstrated. Based on a comprehensive DC-CW and pulsed-RF small-signal characterization, it is shown that the GaN HEMT shows all three effects, while the mHEMT is nearly free of state dependency. The description of the LF dispersion using classical large-signal FET models is compared to the recently proposed integral-transform (ITF) model. A product separation approach for the thermal effects and the extraction of thermal parameters via simultaneous equations is described. A new formulation of the ITF model is capable of describing all three above effects in pulsed-RF and even in CW load-pull operation conditions.
{"title":"State Dependency, Low-Frequency Dispersion, and Thermal Effects in Microwave III-V HEMTs","authors":"F. van Raay, D. Schwantuschke, A. Leuther, P. Brückner, D. Peschel, R. Quay, M. Schlechtweg, O. Ambacher","doi":"10.23919/EUMIC.2018.8539966","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539966","url":null,"abstract":"An AlGaN/GaN HEMT- and an InAlAs/lnGaAs mHEMT technology, both with a gate-length of 100 nm, are investigated w.r.t. state dependency vs. average gate and drain voltages, and low-frequency (LF) dispersion, and the separation of thermal effects is demonstrated. Based on a comprehensive DC-CW and pulsed-RF small-signal characterization, it is shown that the GaN HEMT shows all three effects, while the mHEMT is nearly free of state dependency. The description of the LF dispersion using classical large-signal FET models is compared to the recently proposed integral-transform (ITF) model. A product separation approach for the thermal effects and the extraction of thermal parameters via simultaneous equations is described. A new formulation of the ITF model is capable of describing all three above effects in pulsed-RF and even in CW load-pull operation conditions.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132301521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/eumc.2018.8541726
K. Ansari, T. Ross, Morris Repeta
In this paper we present a programmable variable-gain amplifier (VGA) for a 5G demonstration system at E-band. The proposed VGA consists of a common-base amplifier and a variable loss attenuator controlled by a novel programmable feedback circuit. The attenuator is based on a differential π network and it covers 12 dB of range with a 0.5 dB step size. The circuit is implemented in a 55 nm BiCMOS technology and it achieves maximum gain of 4.8 dB and worst case RMS phase error of 2.6°over 71 GHz−76 GHz. The total power consumption of our design is 18.4 mW from a 1.6 V supply voltage.
{"title":"An E-band Variable-Gain Amplifier Using a Programmable Attenuator","authors":"K. Ansari, T. Ross, Morris Repeta","doi":"10.23919/eumc.2018.8541726","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541726","url":null,"abstract":"In this paper we present a programmable variable-gain amplifier (VGA) for a 5G demonstration system at E-band. The proposed VGA consists of a common-base amplifier and a variable loss attenuator controlled by a novel programmable feedback circuit. The attenuator is based on a differential π network and it covers 12 dB of range with a 0.5 dB step size. The circuit is implemented in a 55 nm BiCMOS technology and it achieves maximum gain of 4.8 dB and worst case RMS phase error of 2.6°over 71 GHz−76 GHz. The total power consumption of our design is 18.4 mW from a 1.6 V supply voltage.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131888240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/eumc.2018.8541689
Emilio Delgado-Pascual, Eduardo Oreja-Gigorro, J. Sánchez-Martínez, Maria Luz Gil-Heras, Virginia Bueno-Fernández, Antonio Bódalo-Márquez, J. Grajal
This paper studies non linear distortion effects in two different architecutres of ultra wideband GaN power amplifiers. As transmitted power, carrier frequency and modulation complexity increase in modern communications systems, there is a need to characterize nonlinearity in HPAs. Two general purpose HPAs, designed and manufactured using European GaN technology, are analyzed in a complex modulation scenario, to characterize the effects produced by their nonlinear features.
{"title":"Non-Linear Distortion in Ultra Wideband GaN Power Amplifiers","authors":"Emilio Delgado-Pascual, Eduardo Oreja-Gigorro, J. Sánchez-Martínez, Maria Luz Gil-Heras, Virginia Bueno-Fernández, Antonio Bódalo-Márquez, J. Grajal","doi":"10.23919/eumc.2018.8541689","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541689","url":null,"abstract":"This paper studies non linear distortion effects in two different architecutres of ultra wideband GaN power amplifiers. As transmitted power, carrier frequency and modulation complexity increase in modern communications systems, there is a need to characterize nonlinearity in HPAs. Two general purpose HPAs, designed and manufactured using European GaN technology, are analyzed in a complex modulation scenario, to characterize the effects produced by their nonlinear features.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134565626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539894
Sergio Pérez-Parras, T. Martín-Guerrero, J. D. Baños-Polglase, C. Camacho-Peñalosa
A method for separating the conduction and displacement current components out of quasi-static nonlinear current sources controlled by two variables is described herein. The method is based on a frequency domain formulation and has been tested by analysing a simple nonlinear current model. A distinctive characteristic of the method is that it does not require any integration of incremental capacitances.
{"title":"Frequency Domain-Based Method for a Two-Port Nonlinear Quasi-Static Model Extraction from Large-Signal Waveforms","authors":"Sergio Pérez-Parras, T. Martín-Guerrero, J. D. Baños-Polglase, C. Camacho-Peñalosa","doi":"10.23919/EUMIC.2018.8539894","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539894","url":null,"abstract":"A method for separating the conduction and displacement current components out of quasi-static nonlinear current sources controlled by two variables is described herein. The method is based on a frequency domain formulation and has been tested by analysing a simple nonlinear current model. A distinctive characteristic of the method is that it does not require any integration of incremental capacitances.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121240323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539910
Juan A. Becerra, Daniel Herrera, M. J. Madero-Ayora, C. Crespo-Cadenas
This communication presents a new technique for the digital predistortion of power amplifiers (PAs) based on sparse behavioral models. The subspace pursuit algorithm formulation is adapted to work in the nonlinear series framework. Experiments driven on a test bench based on a GaN PA driven by a 15-MHz filter bank multicarrier (FBM C) signal were conducted in order to validate the algorithm. Experimental results in a digital predistortion scenario and the comparison with the orthogonal matching pursuit highlight the enhancement of this pruning method.
{"title":"Sparse Model Selection of Digital Predistorters Using Subspace Pursuit","authors":"Juan A. Becerra, Daniel Herrera, M. J. Madero-Ayora, C. Crespo-Cadenas","doi":"10.23919/EUMIC.2018.8539910","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539910","url":null,"abstract":"This communication presents a new technique for the digital predistortion of power amplifiers (PAs) based on sparse behavioral models. The subspace pursuit algorithm formulation is adapted to work in the nonlinear series framework. Experiments driven on a test bench based on a GaN PA driven by a 15-MHz filter bank multicarrier (FBM C) signal were conducted in order to validate the algorithm. Experimental results in a digital predistortion scenario and the comparison with the orthogonal matching pursuit highlight the enhancement of this pruning method.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128853958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/eumic.2018.8539897
P. Sangaré, C. Loyez, K. Carpentier, Markus Mayer, Dirk Hartung, François Parickmiler, N. Rolland
This paper presents an innovative topology of a broadband active quadrature hybrid. This novel architecture consists of a traveling wave amplifier with a unique coupling mechanism, providing amplitude flatness and low phase imbalance over the 4–18 GHz frequency band. Experimental results validate the performance of such a hybrid over more than 2 frequency octaves.
{"title":"A Broadband 4–18 GHz Active Quadrature Hybrid","authors":"P. Sangaré, C. Loyez, K. Carpentier, Markus Mayer, Dirk Hartung, François Parickmiler, N. Rolland","doi":"10.23919/eumic.2018.8539897","DOIUrl":"https://doi.org/10.23919/eumic.2018.8539897","url":null,"abstract":"This paper presents an innovative topology of a broadband active quadrature hybrid. This novel architecture consists of a traveling wave amplifier with a unique coupling mechanism, providing amplitude flatness and low phase imbalance over the 4–18 GHz frequency band. Experimental results validate the performance of such a hybrid over more than 2 frequency octaves.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117200328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/eumc.2018.8541789
J. Bremer, L. Hanning, N. Rorsman, M. Thorsell
This paper investigates the possibilities of using a dynamic bias control scheme for a low noise amplifier to compensate for performance degradation due to thermal effects. The study was performed by characterization of bias voltage and temperature dependence between −25°C to 75°C of a GaN MMIC LNA. The performance, in terms of gain, linearity and noise, degraded, at elevated chip temperatures. Nonlinear behavioral models were developed and used to predict performance for different bias and temperature conditions. Bias conditions to achieve constant gain and noise figure versus temperature are determined. Enhanced RF performance, with improved gain and linearity is demonstrated and is shown to require increased power and involves a trade-off between improving noise figure and gain.
{"title":"Compensation of Performance Degradation due to Thermal Effects in GaN LNA Using Dynamic Bias","authors":"J. Bremer, L. Hanning, N. Rorsman, M. Thorsell","doi":"10.23919/eumc.2018.8541789","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541789","url":null,"abstract":"This paper investigates the possibilities of using a dynamic bias control scheme for a low noise amplifier to compensate for performance degradation due to thermal effects. The study was performed by characterization of bias voltage and temperature dependence between −25°C to 75°C of a GaN MMIC LNA. The performance, in terms of gain, linearity and noise, degraded, at elevated chip temperatures. Nonlinear behavioral models were developed and used to predict performance for different bias and temperature conditions. Bias conditions to achieve constant gain and noise figure versus temperature are determined. Enhanced RF performance, with improved gain and linearity is demonstrated and is shown to require increased power and involves a trade-off between improving noise figure and gain.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127305477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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