Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539935
S. Duffy, B. Benbakhti, W. Zhang, K. Kalna, K. Ahmeda, M. Boucherta, N. Bourzgui, H. Maher, A. Soltani
The source/drain and gate induced charge trapping within an AIGaN/GaN high electron mobility transistor is studied, under normal device operation, by excluding self-heating effects, for the first time. Through direct measurement of current transients of both source and drain terminals, a characterisation technique has been developed to: (i) analyse the transient current degradations from μS to seconds, and (ii) evaluate the drain and gate induced charge trapping mechanisms. Two degradation mechanisms of current are observed: bulk trapping at a short time <1ms); and surface trapping and redistribution (>lms). The bulk charge trapping is found to occur during both ON and OFF states of the device when Vns>0V; where its trapping time constant is independent of bias conditions. In addition, the time constant of the slower current degradation is found to be mainly dependent on surface trapping and redistribution, not by the second heat transient.
{"title":"A Source and Drain Transient Currents Technique for Trap Characterisation in AIGaN/GaN HEMTs","authors":"S. Duffy, B. Benbakhti, W. Zhang, K. Kalna, K. Ahmeda, M. Boucherta, N. Bourzgui, H. Maher, A. Soltani","doi":"10.23919/EUMIC.2018.8539935","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539935","url":null,"abstract":"The source/drain and gate induced charge trapping within an AIGaN/GaN high electron mobility transistor is studied, under normal device operation, by excluding self-heating effects, for the first time. Through direct measurement of current transients of both source and drain terminals, a characterisation technique has been developed to: (i) analyse the transient current degradations from μS to seconds, and (ii) evaluate the drain and gate induced charge trapping mechanisms. Two degradation mechanisms of current are observed: bulk trapping at a short time <1ms); and surface trapping and redistribution (>lms). The bulk charge trapping is found to occur during both ON and OFF states of the device when Vns>0V; where its trapping time constant is independent of bias conditions. In addition, the time constant of the slower current degradation is found to be mainly dependent on surface trapping and redistribution, not by the second heat transient.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121780691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/eumc.2018.8541807
Q. Xiao
This paper discusses models and measurements of bond wire interconnects in Quad-Flat No-lead (QFN) packages. A bond wire interconnect between a 3 mm, 14-lead QFN lead frame and a GaAs chip is used as an example to demonstrate the modelling and measurement process. Measurement results are compared with extracted models and electromagnetic (EM) simulations to verify model and simulation accuracy. Based on the extracted simplified model, theoretical bandwidth limitations of bond wire interconnects are discussed.
{"title":"Characterization of Bond Wire Interconnects in QFN Packages","authors":"Q. Xiao","doi":"10.23919/eumc.2018.8541807","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541807","url":null,"abstract":"This paper discusses models and measurements of bond wire interconnects in Quad-Flat No-lead (QFN) packages. A bond wire interconnect between a 3 mm, 14-lead QFN lead frame and a GaAs chip is used as an example to demonstrate the modelling and measurement process. Measurement results are compared with extracted models and electromagnetic (EM) simulations to verify model and simulation accuracy. Based on the extracted simplified model, theoretical bandwidth limitations of bond wire interconnects are discussed.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125096007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539940
D. Schwantuschke, P. Brückner, R. Amirpour, A. Tessmann, M. Kuri, M. Riessle, H. Massler, R. Quay
This work presents a balanced GaN-based power amplifier targeting the entire V-band frequency range. The fabricated chip was packaged in a split block WR-15 waveguide environment to make it applicable for high-power measurement applications. The designed GaN MMIC provides a high small-signal gain of more than 20 dB within a frequency range of 49 GHz up to 83 GHz. On-wafer large-signal measurements of the MMIC at 75 GHz demonstrate a linear gain of 26.3 dB, along with a saturated output power of 29.3 dBm (850 mW) and a maximum power added efficiency of 13.5 % For the assembled module, an average saturated output power of 28.1 dBm (645 mW) within a variance of ±0.4 dB has been measured for the entire V-band (50–75 GHz).
{"title":"Broadband GaN-Based Power Amplifier MMIC and Module for V-Band Measurement Applications","authors":"D. Schwantuschke, P. Brückner, R. Amirpour, A. Tessmann, M. Kuri, M. Riessle, H. Massler, R. Quay","doi":"10.23919/EUMIC.2018.8539940","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539940","url":null,"abstract":"This work presents a balanced GaN-based power amplifier targeting the entire V-band frequency range. The fabricated chip was packaged in a split block WR-15 waveguide environment to make it applicable for high-power measurement applications. The designed GaN MMIC provides a high small-signal gain of more than 20 dB within a frequency range of 49 GHz up to 83 GHz. On-wafer large-signal measurements of the MMIC at 75 GHz demonstrate a linear gain of 26.3 dB, along with a saturated output power of 29.3 dBm (850 mW) and a maximum power added efficiency of 13.5 % For the assembled module, an average saturated output power of 28.1 dBm (645 mW) within a variance of ±0.4 dB has been measured for the entire V-band (50–75 GHz).","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129898452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/eumc.2018.8541657
Cheng Guo, J. Powell, X. Shang, M. Lancaster, Jun Xu, C. Viegas
A W-band Schottky diode based frequency tripler which uses waveguide resonator filters for low loss impedance matching is presented in this paper. Impedance matching of the diodes is achieved by scaling the external quality factors and adjusting the resonant frequencies of the filter cavities. This removes most of the matching structures from the high loss microstrip circuit to the lower loss waveguide resonators. Here the output frequency of the tripler is set to be 90 GHz with a 10% bandwidth. The simulation shows a conversion loss of 13-13.8 dB in the pass-band with an input power of 13–20 dBm. The measured conversion loss over the pass-band is 13.6 −15.8 dB for 17 dBm input power and better than 14 dB at 90 GHz for 13–20 dBm input power.
{"title":"A W-Band Frequency Tripler with Integrated Waveguide Filter Matching","authors":"Cheng Guo, J. Powell, X. Shang, M. Lancaster, Jun Xu, C. Viegas","doi":"10.23919/eumc.2018.8541657","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541657","url":null,"abstract":"A W-band Schottky diode based frequency tripler which uses waveguide resonator filters for low loss impedance matching is presented in this paper. Impedance matching of the diodes is achieved by scaling the external quality factors and adjusting the resonant frequencies of the filter cavities. This removes most of the matching structures from the high loss microstrip circuit to the lower loss waveguide resonators. Here the output frequency of the tripler is set to be 90 GHz with a 10% bandwidth. The simulation shows a conversion loss of 13-13.8 dB in the pass-band with an input power of 13–20 dBm. The measured conversion loss over the pass-band is 13.6 −15.8 dB for 17 dBm input power and better than 14 dB at 90 GHz for 13–20 dBm input power.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"241 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121872349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/eumc.2018.8541760
Sefa Özbek, M. Grözing, G. Alavi, J. Burghartz, M. Berroth
This paper reports on a design methodology and measurement results of a fully integrated low noise amplifier (LNA) on a thinned substrate for Internet of Things (IoT) applications. Several key RF performance parameters of the LNA with different substrate thickness are evaluated through full-wave electromagnetic (EM) simulations. The proposed LNA operating at 5.5 GHz is fabricated in a cost-effective 0.25 μm SiGe BiCMOS technology (IHP process SGB25V; ft = 75 GHz). The Si chip is thinned to ~38 μm in order to be embedded seamlessly into a flexible foil system. The small-signal gain of the LNA, measured on the chuck is 14.32 dB before thinning. The measured center frequency on the thin silicon (thickness of 38 μm) is shifted about 700 MHz towards higher frequencies compared to the thick silicon due to the image mirror currents within the conducting material at the backside of the chip. The measured noise figure (NF) with the thick and thin substrate on the conducting material is around 3.36 dB at 5.5 GHz and 3.74 dB at 6.3 GHz., respectively.
{"title":"Three-Path SiGe BiCMOS LNA on Thinned Silicon Substrate for IoT Applications","authors":"Sefa Özbek, M. Grözing, G. Alavi, J. Burghartz, M. Berroth","doi":"10.23919/eumc.2018.8541760","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541760","url":null,"abstract":"This paper reports on a design methodology and measurement results of a fully integrated low noise amplifier (LNA) on a thinned substrate for Internet of Things (IoT) applications. Several key RF performance parameters of the LNA with different substrate thickness are evaluated through full-wave electromagnetic (EM) simulations. The proposed LNA operating at 5.5 GHz is fabricated in a cost-effective 0.25 μm SiGe BiCMOS technology (IHP process SGB25V; ft = 75 GHz). The Si chip is thinned to ~38 μm in order to be embedded seamlessly into a flexible foil system. The small-signal gain of the LNA, measured on the chuck is 14.32 dB before thinning. The measured center frequency on the thin silicon (thickness of 38 μm) is shifted about 700 MHz towards higher frequencies compared to the thick silicon due to the image mirror currents within the conducting material at the backside of the chip. The measured noise figure (NF) with the thick and thin substrate on the conducting material is around 3.36 dB at 5.5 GHz and 3.74 dB at 6.3 GHz., respectively.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122991098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/eumic.2018.8539860
G. Castillo
Las profesoras de la Universidad Complutense de Madrid, Eva Aladro y Paula Requeijo, han coordinado una obra ineludible, actual y sumamente interesante, sobre la comunicación y el marketing político en España, a partir del fin del bipartidismo tradicional. En ella, profesores e investigadores de la Universidad Complutense de Madrid y la Universidad de Sevilla analizan la comunicación de los grandes partidos nacionales en el nuevo escenario: desde el papel protagonista que ha cobrado el infoentretenimiento, hasta la centralita de las redes sociales, pasando por los debates electorales televisados o la representación de la mujer política.
马德里康普卢腾斯大学(computense university of Madrid)的教授伊娃·阿德罗(Eva Aladro)和Paula Requeijo协调了一项不可避免的、当前的、非常有趣的工作，内容是关于西班牙传统两党主义结束后的沟通和政治营销。,马德里康普鲁坦斯大学教师和研究人员分析和塞维利亚大学提交来文时大国家党在新的场景:从主角作用已infoentretenimiento、直到交换机的选举辩论的社交网络,通过电视台或妇女政治代表权。
{"title":"Madrid 2018","authors":"G. Castillo","doi":"10.23919/eumic.2018.8539860","DOIUrl":"https://doi.org/10.23919/eumic.2018.8539860","url":null,"abstract":"Las profesoras de la Universidad Complutense de Madrid, Eva Aladro y Paula Requeijo, han coordinado una obra ineludible, actual y sumamente interesante, sobre la comunicación y el marketing político en España, a partir del fin del bipartidismo tradicional. En ella, profesores e investigadores de la Universidad Complutense de Madrid y la Universidad de Sevilla analizan la comunicación de los grandes partidos nacionales en el nuevo escenario: desde el papel protagonista que ha cobrado el infoentretenimiento, hasta la centralita de las redes sociales, pasando por los debates electorales televisados o la representación de la mujer política.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126758119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539894
Sergio Pérez-Parras, T. Martín-Guerrero, J. D. Baños-Polglase, C. Camacho-Peñalosa
A method for separating the conduction and displacement current components out of quasi-static nonlinear current sources controlled by two variables is described herein. The method is based on a frequency domain formulation and has been tested by analysing a simple nonlinear current model. A distinctive characteristic of the method is that it does not require any integration of incremental capacitances.
{"title":"Frequency Domain-Based Method for a Two-Port Nonlinear Quasi-Static Model Extraction from Large-Signal Waveforms","authors":"Sergio Pérez-Parras, T. Martín-Guerrero, J. D. Baños-Polglase, C. Camacho-Peñalosa","doi":"10.23919/EUMIC.2018.8539894","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539894","url":null,"abstract":"A method for separating the conduction and displacement current components out of quasi-static nonlinear current sources controlled by two variables is described herein. The method is based on a frequency domain formulation and has been tested by analysing a simple nonlinear current model. A distinctive characteristic of the method is that it does not require any integration of incremental capacitances.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121240323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539910
Juan A. Becerra, Daniel Herrera, M. J. Madero-Ayora, C. Crespo-Cadenas
This communication presents a new technique for the digital predistortion of power amplifiers (PAs) based on sparse behavioral models. The subspace pursuit algorithm formulation is adapted to work in the nonlinear series framework. Experiments driven on a test bench based on a GaN PA driven by a 15-MHz filter bank multicarrier (FBM C) signal were conducted in order to validate the algorithm. Experimental results in a digital predistortion scenario and the comparison with the orthogonal matching pursuit highlight the enhancement of this pruning method.
{"title":"Sparse Model Selection of Digital Predistorters Using Subspace Pursuit","authors":"Juan A. Becerra, Daniel Herrera, M. J. Madero-Ayora, C. Crespo-Cadenas","doi":"10.23919/EUMIC.2018.8539910","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539910","url":null,"abstract":"This communication presents a new technique for the digital predistortion of power amplifiers (PAs) based on sparse behavioral models. The subspace pursuit algorithm formulation is adapted to work in the nonlinear series framework. Experiments driven on a test bench based on a GaN PA driven by a 15-MHz filter bank multicarrier (FBM C) signal were conducted in order to validate the algorithm. Experimental results in a digital predistortion scenario and the comparison with the orthogonal matching pursuit highlight the enhancement of this pruning method.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128853958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/eumic.2018.8539897
P. Sangaré, C. Loyez, K. Carpentier, Markus Mayer, Dirk Hartung, François Parickmiler, N. Rolland
This paper presents an innovative topology of a broadband active quadrature hybrid. This novel architecture consists of a traveling wave amplifier with a unique coupling mechanism, providing amplitude flatness and low phase imbalance over the 4–18 GHz frequency band. Experimental results validate the performance of such a hybrid over more than 2 frequency octaves.
{"title":"A Broadband 4–18 GHz Active Quadrature Hybrid","authors":"P. Sangaré, C. Loyez, K. Carpentier, Markus Mayer, Dirk Hartung, François Parickmiler, N. Rolland","doi":"10.23919/eumic.2018.8539897","DOIUrl":"https://doi.org/10.23919/eumic.2018.8539897","url":null,"abstract":"This paper presents an innovative topology of a broadband active quadrature hybrid. This novel architecture consists of a traveling wave amplifier with a unique coupling mechanism, providing amplitude flatness and low phase imbalance over the 4–18 GHz frequency band. Experimental results validate the performance of such a hybrid over more than 2 frequency octaves.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117200328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/eumc.2018.8541789
J. Bremer, L. Hanning, N. Rorsman, M. Thorsell
This paper investigates the possibilities of using a dynamic bias control scheme for a low noise amplifier to compensate for performance degradation due to thermal effects. The study was performed by characterization of bias voltage and temperature dependence between −25°C to 75°C of a GaN MMIC LNA. The performance, in terms of gain, linearity and noise, degraded, at elevated chip temperatures. Nonlinear behavioral models were developed and used to predict performance for different bias and temperature conditions. Bias conditions to achieve constant gain and noise figure versus temperature are determined. Enhanced RF performance, with improved gain and linearity is demonstrated and is shown to require increased power and involves a trade-off between improving noise figure and gain.
{"title":"Compensation of Performance Degradation due to Thermal Effects in GaN LNA Using Dynamic Bias","authors":"J. Bremer, L. Hanning, N. Rorsman, M. Thorsell","doi":"10.23919/eumc.2018.8541789","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541789","url":null,"abstract":"This paper investigates the possibilities of using a dynamic bias control scheme for a low noise amplifier to compensate for performance degradation due to thermal effects. The study was performed by characterization of bias voltage and temperature dependence between −25°C to 75°C of a GaN MMIC LNA. The performance, in terms of gain, linearity and noise, degraded, at elevated chip temperatures. Nonlinear behavioral models were developed and used to predict performance for different bias and temperature conditions. Bias conditions to achieve constant gain and noise figure versus temperature are determined. Enhanced RF performance, with improved gain and linearity is demonstrated and is shown to require increased power and involves a trade-off between improving noise figure and gain.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127305477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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