首页 > 最新文献

2018 13th European Microwave Integrated Circuits Conference (EuMIC)最新文献

英文 中文
DC-170 GHz Characterization of 22nm FDSOI Technology for Radar Sensor Applications 雷达传感器应用22nm FDSOI技术的DC-170 GHz特性
Pub Date : 2018-09-01 DOI: 10.23919/EUMIC.2018.8539934
M. Sadegh Dadash, S. Bonen, Utku Alakusu, D. Harame, S. Voinigescu
The high frequency performance of fully wired 22nm FDSOI n- and p- MOSFETs was measured for the first time up to 170 GHz and 125 °C. Record MAG of 8 and 7 dB, respectively, is reported for n- and p-MOSFETs at 170 GHz, higher than for any other MOSFET technology, and comparable or higher than that of the best SiGe HBTs. Moreover, gm, MAG, fT, and fMAX improve monotonically as the gate length is reduced from 80 to 20 nm, and degrade by only 10-15% from 25 to 125 °C. Novel 4-terminal varactors and series-stacked n-MOSFET cascodes with back-gate control were also characterized to assess their application in VCOs, power amplifiers, single-transistor mixers and modulators. An output power of 14 dBm with 12% peak PAE and 24% drain efficiency were measured for 3- and 4-stack cascode test structures at 80 GHz, without any output matching network.
首次测量了全有线22nm FDSOI n-和p- mosfet在170 GHz和125°C下的高频性能。据报道,170 GHz的n-和p-MOSFET的MAG分别为8和7 dB,高于任何其他MOSFET技术,与最佳SiGe hbt相当或更高。此外,当栅极长度从80 nm减小到20 nm时,gm、MAG、fT和fMAX单调提高,并且在25°C至125°C时仅下降10-15%。对新型4端变容管和带后门控制的串联堆叠n-MOSFET级联码进行了表征,评估了它们在vco、功率放大器、单晶体管混频器和调制器中的应用。在没有任何输出匹配网络的情况下,在80 GHz下,3层和4层级联码测试结构的输出功率为14 dBm,峰值PAE为12%,漏极效率为24%。
{"title":"DC-170 GHz Characterization of 22nm FDSOI Technology for Radar Sensor Applications","authors":"M. Sadegh Dadash, S. Bonen, Utku Alakusu, D. Harame, S. Voinigescu","doi":"10.23919/EUMIC.2018.8539934","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539934","url":null,"abstract":"The high frequency performance of fully wired 22nm FDSOI n- and p- MOSFETs was measured for the first time up to 170 GHz and 125 °C. Record MAG of 8 and 7 dB, respectively, is reported for n- and p-MOSFETs at 170 GHz, higher than for any other MOSFET technology, and comparable or higher than that of the best SiGe HBTs. Moreover, gm, MAG, fT, and fMAX improve monotonically as the gate length is reduced from 80 to 20 nm, and degrade by only 10-15% from 25 to 125 °C. Novel 4-terminal varactors and series-stacked n-MOSFET cascodes with back-gate control were also characterized to assess their application in VCOs, power amplifiers, single-transistor mixers and modulators. An output power of 14 dBm with 12% peak PAE and 24% drain efficiency were measured for 3- and 4-stack cascode test structures at 80 GHz, without any output matching network.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122256182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Characterization of Bond Wire Interconnects in QFN Packages QFN封装中键合线互连的表征
Pub Date : 2018-09-01 DOI: 10.23919/eumc.2018.8541807
Q. Xiao
This paper discusses models and measurements of bond wire interconnects in Quad-Flat No-lead (QFN) packages. A bond wire interconnect between a 3 mm, 14-lead QFN lead frame and a GaAs chip is used as an example to demonstrate the modelling and measurement process. Measurement results are compared with extracted models and electromagnetic (EM) simulations to verify model and simulation accuracy. Based on the extracted simplified model, theoretical bandwidth limitations of bond wire interconnects are discussed.
本文讨论了四平无引线封装中键合线互连的模型和测量方法。以3mm 14引线QFN引线框架与GaAs芯片之间的键合线互连为例,演示了建模和测量过程。测量结果与提取的模型和电磁仿真进行了比较,验证了模型和仿真的准确性。基于提取的简化模型,讨论了键合线互连的理论带宽限制。
{"title":"Characterization of Bond Wire Interconnects in QFN Packages","authors":"Q. Xiao","doi":"10.23919/eumc.2018.8541807","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541807","url":null,"abstract":"This paper discusses models and measurements of bond wire interconnects in Quad-Flat No-lead (QFN) packages. A bond wire interconnect between a 3 mm, 14-lead QFN lead frame and a GaAs chip is used as an example to demonstrate the modelling and measurement process. Measurement results are compared with extracted models and electromagnetic (EM) simulations to verify model and simulation accuracy. Based on the extracted simplified model, theoretical bandwidth limitations of bond wire interconnects are discussed.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125096007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Madrid 2018
Pub Date : 2018-09-01 DOI: 10.23919/eumic.2018.8539860
G. Castillo
Las profesoras de la Universidad Complutense de Madrid, Eva Aladro y Paula Requeijo, han coordinado una obra ineludible, actual y sumamente interesante, sobre la comunicación y el marketing político en España, a partir del fin del bipartidismo tradicional. En ella, profesores e investigadores de la Universidad Complutense de Madrid y la Universidad de Sevilla analizan la comunicación de los grandes partidos nacionales en el nuevo escenario: desde el papel protagonista que ha cobrado el infoentretenimiento, hasta la centralita de las redes sociales, pasando por los debates electorales televisados o la representación de la mujer política.
马德里康普卢腾斯大学(computense university of Madrid)的教授伊娃·阿德罗(Eva Aladro)和Paula Requeijo协调了一项不可避免的、当前的、非常有趣的工作,内容是关于西班牙传统两党主义结束后的沟通和政治营销。,马德里康普鲁坦斯大学教师和研究人员分析和塞维利亚大学提交来文时大国家党在新的场景:从主角作用已infoentretenimiento、直到交换机的选举辩论的社交网络,通过电视台或妇女政治代表权。
{"title":"Madrid 2018","authors":"G. Castillo","doi":"10.23919/eumic.2018.8539860","DOIUrl":"https://doi.org/10.23919/eumic.2018.8539860","url":null,"abstract":"Las profesoras de la Universidad Complutense de Madrid, Eva Aladro y Paula Requeijo, han coordinado una obra ineludible, actual y sumamente interesante, sobre la comunicación y el marketing político en España, a partir del fin del bipartidismo tradicional. En ella, profesores e investigadores de la Universidad Complutense de Madrid y la Universidad de Sevilla analizan la comunicación de los grandes partidos nacionales en el nuevo escenario: desde el papel protagonista que ha cobrado el infoentretenimiento, hasta la centralita de las redes sociales, pasando por los debates electorales televisados o la representación de la mujer política.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126758119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
State Dependency, Low-Frequency Dispersion, and Thermal Effects in Microwave III-V HEMTs 微波III-V型hemt的状态依赖、低频色散和热效应
Pub Date : 2018-09-01 DOI: 10.23919/EUMIC.2018.8539966
F. van Raay, D. Schwantuschke, A. Leuther, P. Brückner, D. Peschel, R. Quay, M. Schlechtweg, O. Ambacher
An AlGaN/GaN HEMT- and an InAlAs/lnGaAs mHEMT technology, both with a gate-length of 100 nm, are investigated w.r.t. state dependency vs. average gate and drain voltages, and low-frequency (LF) dispersion, and the separation of thermal effects is demonstrated. Based on a comprehensive DC-CW and pulsed-RF small-signal characterization, it is shown that the GaN HEMT shows all three effects, while the mHEMT is nearly free of state dependency. The description of the LF dispersion using classical large-signal FET models is compared to the recently proposed integral-transform (ITF) model. A product separation approach for the thermal effects and the extraction of thermal parameters via simultaneous equations is described. A new formulation of the ITF model is capable of describing all three above effects in pulsed-RF and even in CW load-pull operation conditions.
采用栅极长度均为100 nm的AlGaN/GaN HEMT-和InAlAs/lnGaAs mHEMT技术,研究了栅极与漏极和栅极的平均电压、低频色散和热效应的分离。基于综合的DC-CW和脉冲- rf小信号特性,表明GaN HEMT具有所有三种效应,而mHEMT几乎没有状态依赖性。将经典的大信号场效应管模型与最近提出的积分变换(ITF)模型对低频色散的描述进行了比较。描述了一种热效应的产物分离方法和通过联立方程提取热参数的方法。一种新的ITF模型能够在脉冲射频甚至连续负载-拉工况下描述上述三种效应。
{"title":"State Dependency, Low-Frequency Dispersion, and Thermal Effects in Microwave III-V HEMTs","authors":"F. van Raay, D. Schwantuschke, A. Leuther, P. Brückner, D. Peschel, R. Quay, M. Schlechtweg, O. Ambacher","doi":"10.23919/EUMIC.2018.8539966","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539966","url":null,"abstract":"An AlGaN/GaN HEMT- and an InAlAs/lnGaAs mHEMT technology, both with a gate-length of 100 nm, are investigated w.r.t. state dependency vs. average gate and drain voltages, and low-frequency (LF) dispersion, and the separation of thermal effects is demonstrated. Based on a comprehensive DC-CW and pulsed-RF small-signal characterization, it is shown that the GaN HEMT shows all three effects, while the mHEMT is nearly free of state dependency. The description of the LF dispersion using classical large-signal FET models is compared to the recently proposed integral-transform (ITF) model. A product separation approach for the thermal effects and the extraction of thermal parameters via simultaneous equations is described. A new formulation of the ITF model is capable of describing all three above effects in pulsed-RF and even in CW load-pull operation conditions.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132301521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
An E-band Variable-Gain Amplifier Using a Programmable Attenuator 采用可编程衰减器的e波段可变增益放大器
Pub Date : 2018-09-01 DOI: 10.23919/eumc.2018.8541726
K. Ansari, T. Ross, Morris Repeta
In this paper we present a programmable variable-gain amplifier (VGA) for a 5G demonstration system at E-band. The proposed VGA consists of a common-base amplifier and a variable loss attenuator controlled by a novel programmable feedback circuit. The attenuator is based on a differential π network and it covers 12 dB of range with a 0.5 dB step size. The circuit is implemented in a 55 nm BiCMOS technology and it achieves maximum gain of 4.8 dB and worst case RMS phase error of 2.6°over 71 GHz−76 GHz. The total power consumption of our design is 18.4 mW from a 1.6 V supply voltage.
本文提出了一种用于5G e波段演示系统的可编程可变增益放大器(VGA)。所提出的VGA由一个共基放大器和一个由新型可编程反馈电路控制的可变损耗衰减器组成。衰减器基于差分π网络,其步长为0.5 dB,范围为12 dB。该电路采用55 nm BiCMOS技术实现,在71 GHz ~ 76 GHz范围内最大增益为4.8 dB,最坏情况下均方根相位误差为2.6°。我们设计的总功耗为18.4 mW,电源电压为1.6 V。
{"title":"An E-band Variable-Gain Amplifier Using a Programmable Attenuator","authors":"K. Ansari, T. Ross, Morris Repeta","doi":"10.23919/eumc.2018.8541726","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541726","url":null,"abstract":"In this paper we present a programmable variable-gain amplifier (VGA) for a 5G demonstration system at E-band. The proposed VGA consists of a common-base amplifier and a variable loss attenuator controlled by a novel programmable feedback circuit. The attenuator is based on a differential π network and it covers 12 dB of range with a 0.5 dB step size. The circuit is implemented in a 55 nm BiCMOS technology and it achieves maximum gain of 4.8 dB and worst case RMS phase error of 2.6°over 71 GHz−76 GHz. The total power consumption of our design is 18.4 mW from a 1.6 V supply voltage.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131888240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Non-Linear Distortion in Ultra Wideband GaN Power Amplifiers 超宽带GaN功率放大器的非线性失真
Pub Date : 2018-09-01 DOI: 10.23919/eumc.2018.8541689
Emilio Delgado-Pascual, Eduardo Oreja-Gigorro, J. Sánchez-Martínez, Maria Luz Gil-Heras, Virginia Bueno-Fernández, Antonio Bódalo-Márquez, J. Grajal
This paper studies non linear distortion effects in two different architecutres of ultra wideband GaN power amplifiers. As transmitted power, carrier frequency and modulation complexity increase in modern communications systems, there is a need to characterize nonlinearity in HPAs. Two general purpose HPAs, designed and manufactured using European GaN technology, are analyzed in a complex modulation scenario, to characterize the effects produced by their nonlinear features.
本文研究了两种不同结构的超宽带氮化镓功率放大器的非线性失真效应。随着现代通信系统中传输功率、载波频率和调制复杂性的增加,有必要对高频放大器中的非线性特性进行表征。使用欧洲GaN技术设计和制造的两种通用hpa在复杂调制场景下进行了分析,以表征其非线性特征产生的影响。
{"title":"Non-Linear Distortion in Ultra Wideband GaN Power Amplifiers","authors":"Emilio Delgado-Pascual, Eduardo Oreja-Gigorro, J. Sánchez-Martínez, Maria Luz Gil-Heras, Virginia Bueno-Fernández, Antonio Bódalo-Márquez, J. Grajal","doi":"10.23919/eumc.2018.8541689","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541689","url":null,"abstract":"This paper studies non linear distortion effects in two different architecutres of ultra wideband GaN power amplifiers. As transmitted power, carrier frequency and modulation complexity increase in modern communications systems, there is a need to characterize nonlinearity in HPAs. Two general purpose HPAs, designed and manufactured using European GaN technology, are analyzed in a complex modulation scenario, to characterize the effects produced by their nonlinear features.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134565626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Frequency Domain-Based Method for a Two-Port Nonlinear Quasi-Static Model Extraction from Large-Signal Waveforms 基于频域的大信号波形双端口非线性准静态模型提取方法
Pub Date : 2018-09-01 DOI: 10.23919/EUMIC.2018.8539894
Sergio Pérez-Parras, T. Martín-Guerrero, J. D. Baños-Polglase, C. Camacho-Peñalosa
A method for separating the conduction and displacement current components out of quasi-static nonlinear current sources controlled by two variables is described herein. The method is based on a frequency domain formulation and has been tested by analysing a simple nonlinear current model. A distinctive characteristic of the method is that it does not require any integration of incremental capacitances.
本文描述了一种从两个变量控制的准静态非线性电流源中分离传导和位移电流分量的方法。该方法基于频域公式,并通过分析一个简单的非线性电流模型进行了验证。该方法的一个显著特点是它不需要对增量电容进行任何积分。
{"title":"Frequency Domain-Based Method for a Two-Port Nonlinear Quasi-Static Model Extraction from Large-Signal Waveforms","authors":"Sergio Pérez-Parras, T. Martín-Guerrero, J. D. Baños-Polglase, C. Camacho-Peñalosa","doi":"10.23919/EUMIC.2018.8539894","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539894","url":null,"abstract":"A method for separating the conduction and displacement current components out of quasi-static nonlinear current sources controlled by two variables is described herein. The method is based on a frequency domain formulation and has been tested by analysing a simple nonlinear current model. A distinctive characteristic of the method is that it does not require any integration of incremental capacitances.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121240323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Sparse Model Selection of Digital Predistorters Using Subspace Pursuit 基于子空间追踪的数字预失真器稀疏模型选择
Pub Date : 2018-09-01 DOI: 10.23919/EUMIC.2018.8539910
Juan A. Becerra, Daniel Herrera, M. J. Madero-Ayora, C. Crespo-Cadenas
This communication presents a new technique for the digital predistortion of power amplifiers (PAs) based on sparse behavioral models. The subspace pursuit algorithm formulation is adapted to work in the nonlinear series framework. Experiments driven on a test bench based on a GaN PA driven by a 15-MHz filter bank multicarrier (FBM C) signal were conducted in order to validate the algorithm. Experimental results in a digital predistortion scenario and the comparison with the orthogonal matching pursuit highlight the enhancement of this pruning method.
本文提出了一种基于稀疏行为模型的功率放大器数字预失真新技术。该子空间追踪算法公式适用于非线性序列框架。为了验证该算法的有效性,在15 mhz滤波器组多载波(FBM C)信号驱动的GaN - PA测试台上进行了实验。在数字预失真场景下的实验结果以及与正交匹配追踪的比较表明了该剪枝方法的增强效果。
{"title":"Sparse Model Selection of Digital Predistorters Using Subspace Pursuit","authors":"Juan A. Becerra, Daniel Herrera, M. J. Madero-Ayora, C. Crespo-Cadenas","doi":"10.23919/EUMIC.2018.8539910","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539910","url":null,"abstract":"This communication presents a new technique for the digital predistortion of power amplifiers (PAs) based on sparse behavioral models. The subspace pursuit algorithm formulation is adapted to work in the nonlinear series framework. Experiments driven on a test bench based on a GaN PA driven by a 15-MHz filter bank multicarrier (FBM C) signal were conducted in order to validate the algorithm. Experimental results in a digital predistortion scenario and the comparison with the orthogonal matching pursuit highlight the enhancement of this pruning method.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128853958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A Broadband 4–18 GHz Active Quadrature Hybrid 宽带4 - 18ghz有源正交混合电路
Pub Date : 2018-09-01 DOI: 10.23919/eumic.2018.8539897
P. Sangaré, C. Loyez, K. Carpentier, Markus Mayer, Dirk Hartung, François Parickmiler, N. Rolland
This paper presents an innovative topology of a broadband active quadrature hybrid. This novel architecture consists of a traveling wave amplifier with a unique coupling mechanism, providing amplitude flatness and low phase imbalance over the 4–18 GHz frequency band. Experimental results validate the performance of such a hybrid over more than 2 frequency octaves.
本文提出了一种创新的宽带有源正交混合拓扑结构。这种新颖的结构由一个具有独特耦合机制的行波放大器组成,在4-18 GHz频段内提供幅度平坦和低相位不平衡。实验结果验证了该混合电路在2倍频以上的性能。
{"title":"A Broadband 4–18 GHz Active Quadrature Hybrid","authors":"P. Sangaré, C. Loyez, K. Carpentier, Markus Mayer, Dirk Hartung, François Parickmiler, N. Rolland","doi":"10.23919/eumic.2018.8539897","DOIUrl":"https://doi.org/10.23919/eumic.2018.8539897","url":null,"abstract":"This paper presents an innovative topology of a broadband active quadrature hybrid. This novel architecture consists of a traveling wave amplifier with a unique coupling mechanism, providing amplitude flatness and low phase imbalance over the 4–18 GHz frequency band. Experimental results validate the performance of such a hybrid over more than 2 frequency octaves.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117200328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Compensation of Performance Degradation due to Thermal Effects in GaN LNA Using Dynamic Bias 利用动态偏置补偿GaN LNA中热效应导致的性能退化
Pub Date : 2018-09-01 DOI: 10.23919/eumc.2018.8541789
J. Bremer, L. Hanning, N. Rorsman, M. Thorsell
This paper investigates the possibilities of using a dynamic bias control scheme for a low noise amplifier to compensate for performance degradation due to thermal effects. The study was performed by characterization of bias voltage and temperature dependence between −25°C to 75°C of a GaN MMIC LNA. The performance, in terms of gain, linearity and noise, degraded, at elevated chip temperatures. Nonlinear behavioral models were developed and used to predict performance for different bias and temperature conditions. Bias conditions to achieve constant gain and noise figure versus temperature are determined. Enhanced RF performance, with improved gain and linearity is demonstrated and is shown to require increased power and involves a trade-off between improving noise figure and gain.
本文研究了在低噪声放大器中使用动态偏置控制方案来补偿由于热效应而导致的性能下降的可能性。该研究通过表征GaN MMIC LNA在- 25°C至75°C之间的偏置电压和温度依赖性来进行。在芯片温度升高的情况下,从增益、线性度和噪声方面来看,性能都有所下降。建立了非线性行为模型,并用于预测不同偏差和温度条件下的性能。确定了实现恒定增益和噪声系数随温度变化的偏置条件。增强的射频性能,改善增益和线性度,显示需要增加功率,并涉及改善噪声系数和增益之间的权衡。
{"title":"Compensation of Performance Degradation due to Thermal Effects in GaN LNA Using Dynamic Bias","authors":"J. Bremer, L. Hanning, N. Rorsman, M. Thorsell","doi":"10.23919/eumc.2018.8541789","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541789","url":null,"abstract":"This paper investigates the possibilities of using a dynamic bias control scheme for a low noise amplifier to compensate for performance degradation due to thermal effects. The study was performed by characterization of bias voltage and temperature dependence between −25°C to 75°C of a GaN MMIC LNA. The performance, in terms of gain, linearity and noise, degraded, at elevated chip temperatures. Nonlinear behavioral models were developed and used to predict performance for different bias and temperature conditions. Bias conditions to achieve constant gain and noise figure versus temperature are determined. Enhanced RF performance, with improved gain and linearity is demonstrated and is shown to require increased power and involves a trade-off between improving noise figure and gain.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127305477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
2018 13th European Microwave Integrated Circuits Conference (EuMIC)
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1