Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539874
Efe Öztürk, D. Genschow, U. Yodprasit, Berk Yilmaz, D. Kissinger, W. Debski, W. Winkler
This paper focuses on the design and measurement results of a 120 GHz monostatic transceiver system for FMCW radar applications. The fully integrated chip is fabricated using 0.13 μm SiGe BiCMOS technology with fT/fmax of 250/340 GHz and occupies only an area of 1.33×0.73mm2, With a current consumption of 270 mA from a 3.3 V single supply, this fully differential transceiver is composed of an I/Q receiver, which has 11.8 dB of conversion gain and −16.6 dBm of input referred P1dB, and a transmitter with 2.6 dBm saturated output power having a 4-bit push-push type VCO integrated to a divide-by-32 block. Furthermore, TX and RX channels are isolated with a very compact front coupler so that the monostatic operation is possible with a single antenna input. As a built-in-self-test block, the transmitted power on transmitter chain is monitored through a two stage power detector by a branch-line-coupler. With the help of a small sized 3×3 cm2 HDPE lens and a compact antenna, the proposed fully integrated monostatic transceiver could detect obstacles above 100 m and proves its suitability for ISM band 120 GHz FMCW radar applications.
{"title":"A 120 GHz SiGe BiCMOS Monostatic Transceiver for Radar Applications","authors":"Efe Öztürk, D. Genschow, U. Yodprasit, Berk Yilmaz, D. Kissinger, W. Debski, W. Winkler","doi":"10.23919/EUMIC.2018.8539874","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539874","url":null,"abstract":"This paper focuses on the design and measurement results of a 120 GHz monostatic transceiver system for FMCW radar applications. The fully integrated chip is fabricated using 0.13 μm SiGe BiCMOS technology with fT/fmax of 250/340 GHz and occupies only an area of 1.33×0.73mm2, With a current consumption of 270 mA from a 3.3 V single supply, this fully differential transceiver is composed of an I/Q receiver, which has 11.8 dB of conversion gain and −16.6 dBm of input referred P1dB, and a transmitter with 2.6 dBm saturated output power having a 4-bit push-push type VCO integrated to a divide-by-32 block. Furthermore, TX and RX channels are isolated with a very compact front coupler so that the monostatic operation is possible with a single antenna input. As a built-in-self-test block, the transmitted power on transmitter chain is monitored through a two stage power detector by a branch-line-coupler. With the help of a small sized 3×3 cm2 HDPE lens and a compact antenna, the proposed fully integrated monostatic transceiver could detect obstacles above 100 m and proves its suitability for ISM band 120 GHz FMCW radar applications.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126223947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539905
V. Di Giacomo-Brunel, E. Byk, C. Chang, J. Grünenpütt, B. Lambert, G. Mouginot, D. Sommer, H. Jung, M. Camiade, P. Fellon, D. Floriot, H. Blanck, J. Viaud
This paper describes the main characteristics of the new GaN-on-SiC technology in development at UMS. This technology is based on a $0.15 - mu mathrm{m}$ gate-length and it is in the phase of industrial qualification for a target release by the end of the year. The results of two out of four demonstrators already successfully designed on the new technology are also reported: a 29.5–36 Ghz 9W HPA and a 15.5–18.5 GHz 20W HPA.
{"title":"Industrial 0.15-μm AlGaN/GaN on SiC Technology for Applications up to Ka Band","authors":"V. Di Giacomo-Brunel, E. Byk, C. Chang, J. Grünenpütt, B. Lambert, G. Mouginot, D. Sommer, H. Jung, M. Camiade, P. Fellon, D. Floriot, H. Blanck, J. Viaud","doi":"10.23919/EUMIC.2018.8539905","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539905","url":null,"abstract":"This paper describes the main characteristics of the new GaN-on-SiC technology in development at UMS. This technology is based on a $0.15 - mu mathrm{m}$ gate-length and it is in the phase of industrial qualification for a target release by the end of the year. The results of two out of four demonstrators already successfully designed on the new technology are also reported: a 29.5–36 Ghz 9W HPA and a 15.5–18.5 GHz 20W HPA.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125704457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539876
Xiao Xu, T. Sugiura, T. Yoshimasu
This paper presents a 14-GHz band ultra-low-power low-phase-noise VCO IC with a novel harmonic tuned LC tank consisting of a conventional LC tank and additional series inductors. The additional inductor is connected between the drain of the cross-coupled pMOSFET and the conventional LC tank circuit to adjust the harmonic impedance and to shape the drain voltage waveform rectangular. The adjusted load impedance improves the phase noise of the VCO IC. The conventional and proposed VCOs are designed, fabricated and fully measured on-wafer in 56-nm SOI CMOS technology. The fabricated VCO IC has exhibited a measured phase-noise of − 125.7 dBc/Hz at 10 MHz offset from the 13.46 GHz carrier frequency at a supply voltage of only 0.3 V. The power consumption of the VCO IC core is 0.63 mW and the FoM is − 190.2 dBc/Hz.
{"title":"A 0.3 V −190.2 dBc/Hz FoM 14-GHz Band LC-VCO IC with Harmonic Tuned LC Tank in 56-nm SOI CMOS","authors":"Xiao Xu, T. Sugiura, T. Yoshimasu","doi":"10.23919/EUMIC.2018.8539876","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539876","url":null,"abstract":"This paper presents a 14-GHz band ultra-low-power low-phase-noise VCO IC with a novel harmonic tuned LC tank consisting of a conventional LC tank and additional series inductors. The additional inductor is connected between the drain of the cross-coupled pMOSFET and the conventional LC tank circuit to adjust the harmonic impedance and to shape the drain voltage waveform rectangular. The adjusted load impedance improves the phase noise of the VCO IC. The conventional and proposed VCOs are designed, fabricated and fully measured on-wafer in 56-nm SOI CMOS technology. The fabricated VCO IC has exhibited a measured phase-noise of − 125.7 dBc/Hz at 10 MHz offset from the 13.46 GHz carrier frequency at a supply voltage of only 0.3 V. The power consumption of the VCO IC core is 0.63 mW and the FoM is − 190.2 dBc/Hz.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122939223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539941
M. Bouslama, A. Al Hajjar, R. Sommet, F. Medjdoub, J. Nallatamby
This paper reports the full characterization and modeling of novel AlN/GaN HEMTs on silicon using a short gate length. This device has been optimized for high frequency analog circuits applications. The presented model includes DC and small-signal modeling steps taking into account the trapping effects. It contains a trap model inside the current source which allows to accurately predict gate-lag transient response and low frequency dispersion of the output admittance. The model is validated by comparing the 4 GHz load-pull measurement results with the simulation ones.
{"title":"Characterization and Electrical Modeling Including Trapping Effects of AIN/GaN HEMT 4×50μm on Silicon Substrate","authors":"M. Bouslama, A. Al Hajjar, R. Sommet, F. Medjdoub, J. Nallatamby","doi":"10.23919/EUMIC.2018.8539941","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539941","url":null,"abstract":"This paper reports the full characterization and modeling of novel AlN/GaN HEMTs on silicon using a short gate length. This device has been optimized for high frequency analog circuits applications. The presented model includes DC and small-signal modeling steps taking into account the trapping effects. It contains a trap model inside the current source which allows to accurately predict gate-lag transient response and low frequency dispersion of the output admittance. The model is validated by comparing the 4 GHz load-pull measurement results with the simulation ones.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134608680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/eumc.2018.8541689
Emilio Delgado-Pascual, Eduardo Oreja-Gigorro, J. Sánchez-Martínez, Maria Luz Gil-Heras, Virginia Bueno-Fernández, Antonio Bódalo-Márquez, J. Grajal
This paper studies non linear distortion effects in two different architecutres of ultra wideband GaN power amplifiers. As transmitted power, carrier frequency and modulation complexity increase in modern communications systems, there is a need to characterize nonlinearity in HPAs. Two general purpose HPAs, designed and manufactured using European GaN technology, are analyzed in a complex modulation scenario, to characterize the effects produced by their nonlinear features.
{"title":"Non-Linear Distortion in Ultra Wideband GaN Power Amplifiers","authors":"Emilio Delgado-Pascual, Eduardo Oreja-Gigorro, J. Sánchez-Martínez, Maria Luz Gil-Heras, Virginia Bueno-Fernández, Antonio Bódalo-Márquez, J. Grajal","doi":"10.23919/eumc.2018.8541689","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541689","url":null,"abstract":"This paper studies non linear distortion effects in two different architecutres of ultra wideband GaN power amplifiers. As transmitted power, carrier frequency and modulation complexity increase in modern communications systems, there is a need to characterize nonlinearity in HPAs. Two general purpose HPAs, designed and manufactured using European GaN technology, are analyzed in a complex modulation scenario, to characterize the effects produced by their nonlinear features.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134565626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539966
F. van Raay, D. Schwantuschke, A. Leuther, P. Brückner, D. Peschel, R. Quay, M. Schlechtweg, O. Ambacher
An AlGaN/GaN HEMT- and an InAlAs/lnGaAs mHEMT technology, both with a gate-length of 100 nm, are investigated w.r.t. state dependency vs. average gate and drain voltages, and low-frequency (LF) dispersion, and the separation of thermal effects is demonstrated. Based on a comprehensive DC-CW and pulsed-RF small-signal characterization, it is shown that the GaN HEMT shows all three effects, while the mHEMT is nearly free of state dependency. The description of the LF dispersion using classical large-signal FET models is compared to the recently proposed integral-transform (ITF) model. A product separation approach for the thermal effects and the extraction of thermal parameters via simultaneous equations is described. A new formulation of the ITF model is capable of describing all three above effects in pulsed-RF and even in CW load-pull operation conditions.
{"title":"State Dependency, Low-Frequency Dispersion, and Thermal Effects in Microwave III-V HEMTs","authors":"F. van Raay, D. Schwantuschke, A. Leuther, P. Brückner, D. Peschel, R. Quay, M. Schlechtweg, O. Ambacher","doi":"10.23919/EUMIC.2018.8539966","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539966","url":null,"abstract":"An AlGaN/GaN HEMT- and an InAlAs/lnGaAs mHEMT technology, both with a gate-length of 100 nm, are investigated w.r.t. state dependency vs. average gate and drain voltages, and low-frequency (LF) dispersion, and the separation of thermal effects is demonstrated. Based on a comprehensive DC-CW and pulsed-RF small-signal characterization, it is shown that the GaN HEMT shows all three effects, while the mHEMT is nearly free of state dependency. The description of the LF dispersion using classical large-signal FET models is compared to the recently proposed integral-transform (ITF) model. A product separation approach for the thermal effects and the extraction of thermal parameters via simultaneous equations is described. A new formulation of the ITF model is capable of describing all three above effects in pulsed-RF and even in CW load-pull operation conditions.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132301521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/eumc.2018.8541726
K. Ansari, T. Ross, Morris Repeta
In this paper we present a programmable variable-gain amplifier (VGA) for a 5G demonstration system at E-band. The proposed VGA consists of a common-base amplifier and a variable loss attenuator controlled by a novel programmable feedback circuit. The attenuator is based on a differential π network and it covers 12 dB of range with a 0.5 dB step size. The circuit is implemented in a 55 nm BiCMOS technology and it achieves maximum gain of 4.8 dB and worst case RMS phase error of 2.6°over 71 GHz−76 GHz. The total power consumption of our design is 18.4 mW from a 1.6 V supply voltage.
{"title":"An E-band Variable-Gain Amplifier Using a Programmable Attenuator","authors":"K. Ansari, T. Ross, Morris Repeta","doi":"10.23919/eumc.2018.8541726","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541726","url":null,"abstract":"In this paper we present a programmable variable-gain amplifier (VGA) for a 5G demonstration system at E-band. The proposed VGA consists of a common-base amplifier and a variable loss attenuator controlled by a novel programmable feedback circuit. The attenuator is based on a differential π network and it covers 12 dB of range with a 0.5 dB step size. The circuit is implemented in a 55 nm BiCMOS technology and it achieves maximum gain of 4.8 dB and worst case RMS phase error of 2.6°over 71 GHz−76 GHz. The total power consumption of our design is 18.4 mW from a 1.6 V supply voltage.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131888240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539934
M. Sadegh Dadash, S. Bonen, Utku Alakusu, D. Harame, S. Voinigescu
The high frequency performance of fully wired 22nm FDSOI n- and p- MOSFETs was measured for the first time up to 170 GHz and 125 °C. Record MAG of 8 and 7 dB, respectively, is reported for n- and p-MOSFETs at 170 GHz, higher than for any other MOSFET technology, and comparable or higher than that of the best SiGe HBTs. Moreover, gm, MAG, fT, and fMAX improve monotonically as the gate length is reduced from 80 to 20 nm, and degrade by only 10-15% from 25 to 125 °C. Novel 4-terminal varactors and series-stacked n-MOSFET cascodes with back-gate control were also characterized to assess their application in VCOs, power amplifiers, single-transistor mixers and modulators. An output power of 14 dBm with 12% peak PAE and 24% drain efficiency were measured for 3- and 4-stack cascode test structures at 80 GHz, without any output matching network.
{"title":"DC-170 GHz Characterization of 22nm FDSOI Technology for Radar Sensor Applications","authors":"M. Sadegh Dadash, S. Bonen, Utku Alakusu, D. Harame, S. Voinigescu","doi":"10.23919/EUMIC.2018.8539934","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539934","url":null,"abstract":"The high frequency performance of fully wired 22nm FDSOI n- and p- MOSFETs was measured for the first time up to 170 GHz and 125 °C. Record MAG of 8 and 7 dB, respectively, is reported for n- and p-MOSFETs at 170 GHz, higher than for any other MOSFET technology, and comparable or higher than that of the best SiGe HBTs. Moreover, gm, MAG, fT, and fMAX improve monotonically as the gate length is reduced from 80 to 20 nm, and degrade by only 10-15% from 25 to 125 °C. Novel 4-terminal varactors and series-stacked n-MOSFET cascodes with back-gate control were also characterized to assess their application in VCOs, power amplifiers, single-transistor mixers and modulators. An output power of 14 dBm with 12% peak PAE and 24% drain efficiency were measured for 3- and 4-stack cascode test structures at 80 GHz, without any output matching network.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122256182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539867
A. Issaoun, P. Hammes, M. Fagerlind, F. Chai, T. Roedle
Highly optimized multi-finger GaN HEMT's are prone to internal oscillations or odd-modes. Developing tools to detect and suppress these oscillations is of great help for GaN device designers. This manuscript proposes an internal oscillations detection technique based on a FET small-signal equivalent circuit coupled to Electromagnetic (EM) simulations. Then, a stability analysis technique is applied on the developed transfer function. The approach is demonstrated on three 8-finger cells using three different stability analysis techniques. All outcomes of the used stability techniques align which proves the accuracy of the developed approach.
{"title":"On Stability Analysis and Loop Oscillation of Multi-Finger GaN FET Cells for High Power Amplifiers","authors":"A. Issaoun, P. Hammes, M. Fagerlind, F. Chai, T. Roedle","doi":"10.23919/EUMIC.2018.8539867","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539867","url":null,"abstract":"Highly optimized multi-finger GaN HEMT's are prone to internal oscillations or odd-modes. Developing tools to detect and suppress these oscillations is of great help for GaN device designers. This manuscript proposes an internal oscillations detection technique based on a FET small-signal equivalent circuit coupled to Electromagnetic (EM) simulations. Then, a stability analysis technique is applied on the developed transfer function. The approach is demonstrated on three 8-finger cells using three different stability analysis techniques. All outcomes of the used stability techniques align which proves the accuracy of the developed approach.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117187523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539915
M. Hossain, M. Eissa, M. Hrobak, D. Stoppel, N. Weimann, A. Malignaggi, A. Mai, D. Kissinger, W. Heinrich, V. Krozer
This paper presents a W -band hetero-integrated transmitter module using InP-on-BiCMOS technology. It consists of a Phase Locked Loop (PLL) in 0.25 μm BiCMOS technology and a frequency multiplier followed by a double-balanced Gilbert mixer cell in 0.8 μm InP-HBT technology, which is integrated on top of the BiCMOS MMIC in a wafer-level BCB bonding process. The PLL operates from 45 GHz to 47 GHz and the module achieves a measured single sideband (SSB) power conversion loss of 20 dB and 22 dB at 88 GHz and 95 GHz, respectively, limited by the output power from the PLL source. The entire circuit consumes 434 mW DC power. The chip area of the module is 2.5×1.3 mm2, To the knowledge of the authors, this is the first complex hetero-Integrated module reported so far.
{"title":"A Hetero-Integrated W-Band Transmitter Module in InP-on-BiCMOS Technology","authors":"M. Hossain, M. Eissa, M. Hrobak, D. Stoppel, N. Weimann, A. Malignaggi, A. Mai, D. Kissinger, W. Heinrich, V. Krozer","doi":"10.23919/EUMIC.2018.8539915","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539915","url":null,"abstract":"This paper presents a W -band hetero-integrated transmitter module using InP-on-BiCMOS technology. It consists of a Phase Locked Loop (PLL) in 0.25 μm BiCMOS technology and a frequency multiplier followed by a double-balanced Gilbert mixer cell in 0.8 μm InP-HBT technology, which is integrated on top of the BiCMOS MMIC in a wafer-level BCB bonding process. The PLL operates from 45 GHz to 47 GHz and the module achieves a measured single sideband (SSB) power conversion loss of 20 dB and 22 dB at 88 GHz and 95 GHz, respectively, limited by the output power from the PLL source. The entire circuit consumes 434 mW DC power. The chip area of the module is 2.5×1.3 mm2, To the knowledge of the authors, this is the first complex hetero-Integrated module reported so far.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"371 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116229484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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