Pub Date : 2006-05-08DOI: 10.1109/MEMSYS.2006.1627843
Heon-Min Lee, H. Kim, Hyung-Kyu Choi, Hee Chul Lee, H. Hong, Don-Hee Lee, Joung-Uk Bu, E. Yoon
In this paper, we first report the microchemical sensor application of differential-mode Thin Film Bulk Acoustic Resonators (TFBARs) for Volatile Organic Compound (VOC) detection. Using the micro heater element, the membrane temperature of TFBARs can be increased up to 250 oC. Generally, VOCs are decomposed to CO and CO2at the temperature of above 200oC, the additional reference oscillator without VOC adsorption can be simply realized by heating the membrane. The RF signal mixer is used to determine the shift in oscillation frequency between sensing and reference oscillators. The frequency responses and sensitivities to benzene, ethanol, and formaldehyde are tested and presented, respectively.
{"title":"A Highly-Sensitive Differential-Mode Microchemical Sensor Using TFBARs with On-Chip Microheater for Volatile Organic Compound (VOC) Detection","authors":"Heon-Min Lee, H. Kim, Hyung-Kyu Choi, Hee Chul Lee, H. Hong, Don-Hee Lee, Joung-Uk Bu, E. Yoon","doi":"10.1109/MEMSYS.2006.1627843","DOIUrl":"https://doi.org/10.1109/MEMSYS.2006.1627843","url":null,"abstract":"In this paper, we first report the microchemical sensor application of differential-mode Thin Film Bulk Acoustic Resonators (TFBARs) for Volatile Organic Compound (VOC) detection. Using the micro heater element, the membrane temperature of TFBARs can be increased up to 250 oC. Generally, VOCs are decomposed to CO and CO2at the temperature of above 200oC, the additional reference oscillator without VOC adsorption can be simply realized by heating the membrane. The RF signal mixer is used to determine the shift in oscillation frequency between sensing and reference oscillators. The frequency responses and sensitivities to benzene, ethanol, and formaldehyde are tested and presented, respectively.","PeriodicalId":250831,"journal":{"name":"19th IEEE International Conference on Micro Electro Mechanical Systems","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131520430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-05-08DOI: 10.1109/MEMSYS.2006.1627945
J. Oberhammer, M. Tang, A. Liu, G. Stemme
This paper reports on a tri-stable mechanically interlocking switch mechanism based on laterally moving curved-electrode electrostatic actuators. The in-line switches are realized in a true single-pole-double-throw configuration (SPDT) with three mechanically stable states: 1) input to first output; 2) switch off; 3) input to second output (on-off-on). The devices are fabricated in a silicon-on-glass process and are coated with sputtered gold, resulting in an all-metal switch. The switches feature active opening capability for which the curved-electrode actuators are utilized in their end-position where they develop their maximum force to guarantee a very large opening force which makes the switch less susceptible for contact stiction.
{"title":"Mechanically Tri-Stable In-Line Single-Pole-Double-Throw All-Metal Switch","authors":"J. Oberhammer, M. Tang, A. Liu, G. Stemme","doi":"10.1109/MEMSYS.2006.1627945","DOIUrl":"https://doi.org/10.1109/MEMSYS.2006.1627945","url":null,"abstract":"This paper reports on a tri-stable mechanically interlocking switch mechanism based on laterally moving curved-electrode electrostatic actuators. The in-line switches are realized in a true single-pole-double-throw configuration (SPDT) with three mechanically stable states: 1) input to first output; 2) switch off; 3) input to second output (on-off-on). The devices are fabricated in a silicon-on-glass process and are coated with sputtered gold, resulting in an all-metal switch. The switches feature active opening capability for which the curved-electrode actuators are utilized in their end-position where they develop their maximum force to guarantee a very large opening force which makes the switch less susceptible for contact stiction.","PeriodicalId":250831,"journal":{"name":"19th IEEE International Conference on Micro Electro Mechanical Systems","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127709288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-05-08DOI: 10.1109/MEMSYS.2006.1627877
A. Barlian, R. Narain, J.T. Li, C.E. Quance, A. Ho, V. Mukundan, B. Pruitt
We report on the design and performance of underwater piezoresistive floating-element shear stress sensors for direct dynamic measurements. Our design utilizes sidewall-implanted piezoresistors to measure lateral force and infer shear stress, and traditional top-implanted piezoresistors to detect normal forces and pressure transients. A gravity-driven flume was used to test the sensors. FEMLAB simulation and microscale Particle Image Velocimetry experiments were used to characterize the flow disturbance over different gap sizes. The results show no detectable disturbance of the flow over the range of sensor gap sizes evaluated (5-20 µ m).
{"title":"Piezoresistive MEMS Underwater Shear Stress Sensors","authors":"A. Barlian, R. Narain, J.T. Li, C.E. Quance, A. Ho, V. Mukundan, B. Pruitt","doi":"10.1109/MEMSYS.2006.1627877","DOIUrl":"https://doi.org/10.1109/MEMSYS.2006.1627877","url":null,"abstract":"We report on the design and performance of underwater piezoresistive floating-element shear stress sensors for direct dynamic measurements. Our design utilizes sidewall-implanted piezoresistors to measure lateral force and infer shear stress, and traditional top-implanted piezoresistors to detect normal forces and pressure transients. A gravity-driven flume was used to test the sensors. FEMLAB simulation and microscale Particle Image Velocimetry experiments were used to characterize the flow disturbance over different gap sizes. The results show no detectable disturbance of the flow over the range of sensor gap sizes evaluated (5-20 µ m).","PeriodicalId":250831,"journal":{"name":"19th IEEE International Conference on Micro Electro Mechanical Systems","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127793013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-05-08DOI: 10.1109/MEMSYS.2006.1627774
H. Jacobsen, H. Quenzer, B. Wagner, K. Ortner, T. Jung
Polycrystalline Lead Zirconate Titanate (PZT) thin films in the range of 3 µ m to 16 µ m were crack free deposited on silicon substrates in a high rate Gas Flow Sputtering process. Gas Flow Sputtering uses the hollow cathode effect which results into high deposition rates of about 200 nm/min to 250 nm/min.
{"title":"High-Rate Sputtering of Thick PZT Layers for MEMS Actuators","authors":"H. Jacobsen, H. Quenzer, B. Wagner, K. Ortner, T. Jung","doi":"10.1109/MEMSYS.2006.1627774","DOIUrl":"https://doi.org/10.1109/MEMSYS.2006.1627774","url":null,"abstract":"Polycrystalline Lead Zirconate Titanate (PZT) thin films in the range of 3 µ m to 16 µ m were crack free deposited on silicon substrates in a high rate Gas Flow Sputtering process. Gas Flow Sputtering uses the hollow cathode effect which results into high deposition rates of about 200 nm/min to 250 nm/min.","PeriodicalId":250831,"journal":{"name":"19th IEEE International Conference on Micro Electro Mechanical Systems","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133336309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-05-08DOI: 10.1109/MEMSYS.2006.1627880
J. Verd, G. Abadal, J. Teva, A. Uranga, F. Pérez-Murano, J. Esteve, N. Barniol
This paper presents the design, fabrication and characterization of a high-sensitivity mass sensor based on a laterally resonating metal cantilever that is fully compatible with standard CMOS technologies, and which post-CMOS process is based on a single step wet etching process without the need of any additional lithographic process. The system uses electrostatic actuation and capacitive readout performed by a high-sensitivity readout circuitry monolithically integrated. The expected mass sensitivity of the metal resonators presented is around 1 ag/Hz and 4.5 ag/Hz for punctual mass and uniform mass deposition respectively. These sensitivities have been corroborated experimentally by means of two kinds of experiments: deposition of a punctual mass and deposition of a thin film of gold.
{"title":"Resonant Metal Cantilever with Attogram/Hz Mass Sensitivity Fully Integrated in a Standard 0.35-μm CMOS Process","authors":"J. Verd, G. Abadal, J. Teva, A. Uranga, F. Pérez-Murano, J. Esteve, N. Barniol","doi":"10.1109/MEMSYS.2006.1627880","DOIUrl":"https://doi.org/10.1109/MEMSYS.2006.1627880","url":null,"abstract":"This paper presents the design, fabrication and characterization of a high-sensitivity mass sensor based on a laterally resonating metal cantilever that is fully compatible with standard CMOS technologies, and which post-CMOS process is based on a single step wet etching process without the need of any additional lithographic process. The system uses electrostatic actuation and capacitive readout performed by a high-sensitivity readout circuitry monolithically integrated. The expected mass sensitivity of the metal resonators presented is around 1 ag/Hz and 4.5 ag/Hz for punctual mass and uniform mass deposition respectively. These sensitivities have been corroborated experimentally by means of two kinds of experiments: deposition of a punctual mass and deposition of a thin film of gold.","PeriodicalId":250831,"journal":{"name":"19th IEEE International Conference on Micro Electro Mechanical Systems","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116998003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-05-08DOI: 10.1109/MEMSYS.2006.1627768
C.T. Chen, F. Tseng, C. Chieng
It is important but difficult to control the uniformity of solute deposition from a nanoliter droplet. The uniformity of solute deposition for a droplet in a nanoliter well is controlled by evaporation process. This paper proposes a method for uniform solute deposition from droplet evaporation confined by rib structures with specific surface properties, and the dynamic process is conducted experimentally and is analyzed in detail. Hydrophilic degree on the well surface is critical for controlling the film uniformity in the dynamic evaporation process, in particular around the rib of well. Experimental result indicates that the higher hydrophobicty (contact angle above 90°) on well surface yields flatter film profile during droplet evaporation inside a well, thus promotes a more uniform solute deposition.
{"title":"Uniform Nanoliter Solute Deposition by the Control of Droplet Profile During Evaporation with Microwell","authors":"C.T. Chen, F. Tseng, C. Chieng","doi":"10.1109/MEMSYS.2006.1627768","DOIUrl":"https://doi.org/10.1109/MEMSYS.2006.1627768","url":null,"abstract":"It is important but difficult to control the uniformity of solute deposition from a nanoliter droplet. The uniformity of solute deposition for a droplet in a nanoliter well is controlled by evaporation process. This paper proposes a method for uniform solute deposition from droplet evaporation confined by rib structures with specific surface properties, and the dynamic process is conducted experimentally and is analyzed in detail. Hydrophilic degree on the well surface is critical for controlling the film uniformity in the dynamic evaporation process, in particular around the rib of well. Experimental result indicates that the higher hydrophobicty (contact angle above 90°) on well surface yields flatter film profile during droplet evaporation inside a well, thus promotes a more uniform solute deposition.","PeriodicalId":250831,"journal":{"name":"19th IEEE International Conference on Micro Electro Mechanical Systems","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115529281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-05-08DOI: 10.1109/MEMSYS.2006.1627942
S. Pranonsatit, G. Hong, A. Holmes, S. Lucyszyn
A novel, truly rotary, single-pole eight-throw (SP8T) RF MEMS switch is reported. The concept is an adaptation of the axial-gap electrostatic wobble motor. Details of the switch design and fabrication process are presented, together with initial test results for prototype devices. DC contact resistance measurements have been made over half a million rotations, yielding an average contact resistance of 2.5 Ω. The switch shows promising RF performance, with insertion loss varying smoothly from 0.6 dB at 2 GHz to 4 dB at 20 GHz, and isolation better than 31 dB across the frequency range 0.5 to 20 GHz.
{"title":"Rotary RF MEMS Switch Based on the Wobble Motor Principle","authors":"S. Pranonsatit, G. Hong, A. Holmes, S. Lucyszyn","doi":"10.1109/MEMSYS.2006.1627942","DOIUrl":"https://doi.org/10.1109/MEMSYS.2006.1627942","url":null,"abstract":"A novel, truly rotary, single-pole eight-throw (SP8T) RF MEMS switch is reported. The concept is an adaptation of the axial-gap electrostatic wobble motor. Details of the switch design and fabrication process are presented, together with initial test results for prototype devices. DC contact resistance measurements have been made over half a million rotations, yielding an average contact resistance of 2.5 Ω. The switch shows promising RF performance, with insertion loss varying smoothly from 0.6 dB at 2 GHz to 4 dB at 20 GHz, and isolation better than 31 dB across the frequency range 0.5 to 20 GHz.","PeriodicalId":250831,"journal":{"name":"19th IEEE International Conference on Micro Electro Mechanical Systems","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125038609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-05-08DOI: 10.1109/MEMSYS.2006.1627827
Dong Woo Lee, Young‐Ho Cho
We present a continuous electrical cell lysis device, using a DC bias voltage (about 50V) to generate the focused high electric field for cell lysis as well as the electro-osmotic flow for cell transport. The previous cell lysis devices focusing electric field apply an AC voltage between micro-gap electrodes for cell lysis and use pumps or valves for cell transport. The present DC cell lysis device, however, generates high electrical field by reducing the width of the channel between a DC electrode pair. The present device performs continuous cell lysis and pumping without using additional flow source, while the previous AC devices needs additional pumps or valves for the discontinuous cell loading and unloading in the lysis chambers. In the experimental study, the fabricated device shows the RBC lysis rate of 100% and electro-osmotic flow of 30±9μm/s for the bias voltage of 50V. Major advantages of the present device include the continuous, self-pumping cell lysis performance, suitable for integrated biofluidic systems.
{"title":"A Continuous Cell Lysis Device Using Focused High Electric Field and Self-Generated Electroosmotic Flow","authors":"Dong Woo Lee, Young‐Ho Cho","doi":"10.1109/MEMSYS.2006.1627827","DOIUrl":"https://doi.org/10.1109/MEMSYS.2006.1627827","url":null,"abstract":"We present a continuous electrical cell lysis device, using a DC bias voltage (about 50V) to generate the focused high electric field for cell lysis as well as the electro-osmotic flow for cell transport. The previous cell lysis devices focusing electric field apply an AC voltage between micro-gap electrodes for cell lysis and use pumps or valves for cell transport. The present DC cell lysis device, however, generates high electrical field by reducing the width of the channel between a DC electrode pair. The present device performs continuous cell lysis and pumping without using additional flow source, while the previous AC devices needs additional pumps or valves for the discontinuous cell loading and unloading in the lysis chambers. In the experimental study, the fabricated device shows the RBC lysis rate of 100% and electro-osmotic flow of 30±9μm/s for the bias voltage of 50V. Major advantages of the present device include the continuous, self-pumping cell lysis performance, suitable for integrated biofluidic systems.","PeriodicalId":250831,"journal":{"name":"19th IEEE International Conference on Micro Electro Mechanical Systems","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129746322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-05-08DOI: 10.1109/MEMSYS.2006.1627839
J. Lund, Chia-Jean Wang, B. Parviz
We present the fabrication and characterization of a nano-scale sensor made of amorphous silicon (a-Si), functionalized for the detection of pH and DNA hybridization. The detector is composed of a nano-scale a-Si semicircle with a surface functionalized by receptor molecules containing single-strand DNA. Target complimentary DNA molecules bind the receptor molecules and their charge accumulating near the surface of the nanoscale semicircle causes in turn a change in the charge carrier density under the surface. This change of charge carrier density results in an effective change of conductance that can be monitored electronically. The sensor structure allows for direct conversion of molecular recognition and binding events to electronic signals.
{"title":"Electronic Detection of DNA with Amorphous Silicon Nanostructures","authors":"J. Lund, Chia-Jean Wang, B. Parviz","doi":"10.1109/MEMSYS.2006.1627839","DOIUrl":"https://doi.org/10.1109/MEMSYS.2006.1627839","url":null,"abstract":"We present the fabrication and characterization of a nano-scale sensor made of amorphous silicon (a-Si), functionalized for the detection of pH and DNA hybridization. The detector is composed of a nano-scale a-Si semicircle with a surface functionalized by receptor molecules containing single-strand DNA. Target complimentary DNA molecules bind the receptor molecules and their charge accumulating near the surface of the nanoscale semicircle causes in turn a change in the charge carrier density under the surface. This change of charge carrier density results in an effective change of conductance that can be monitored electronically. The sensor structure allows for direct conversion of molecular recognition and binding events to electronic signals.","PeriodicalId":250831,"journal":{"name":"19th IEEE International Conference on Micro Electro Mechanical Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129769393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-05-08DOI: 10.1109/MEMSYS.2006.1627914
Hsueh-An Yang, W. Fang
This paper reports a novel micro scanning mirror driven by coil-less Lorentz force using eddy current. The eddy current is easily induced in ferromagnetic material like Nickel by solenoid. Thus, the complicated coil routing and insulation layer deposition for current is prevented. Moreover, the fabrication is simplified and easy to integrate with micromachining and CMOS processes. In application, this study demonstrated a bulk micromachined 2D scanning mirror with 20 mechanical scan angles when operated at 100mV and 0.016mA.
{"title":"A Novel Coil-Less Lorentz Force 2D Scanning Mirror Using Eddy Current","authors":"Hsueh-An Yang, W. Fang","doi":"10.1109/MEMSYS.2006.1627914","DOIUrl":"https://doi.org/10.1109/MEMSYS.2006.1627914","url":null,"abstract":"This paper reports a novel micro scanning mirror driven by coil-less Lorentz force using eddy current. The eddy current is easily induced in ferromagnetic material like Nickel by solenoid. Thus, the complicated coil routing and insulation layer deposition for current is prevented. Moreover, the fabrication is simplified and easy to integrate with micromachining and CMOS processes. In application, this study demonstrated a bulk micromachined 2D scanning mirror with 20 mechanical scan angles when operated at 100mV and 0.016mA.","PeriodicalId":250831,"journal":{"name":"19th IEEE International Conference on Micro Electro Mechanical Systems","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128829819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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