Pub Date : 2006-05-08DOI: 10.1109/MEMSYS.2006.1627843
Heon-Min Lee, H. Kim, Hyung-Kyu Choi, Hee Chul Lee, H. Hong, Don-Hee Lee, Joung-Uk Bu, E. Yoon
In this paper, we first report the microchemical sensor application of differential-mode Thin Film Bulk Acoustic Resonators (TFBARs) for Volatile Organic Compound (VOC) detection. Using the micro heater element, the membrane temperature of TFBARs can be increased up to 250 oC. Generally, VOCs are decomposed to CO and CO2at the temperature of above 200oC, the additional reference oscillator without VOC adsorption can be simply realized by heating the membrane. The RF signal mixer is used to determine the shift in oscillation frequency between sensing and reference oscillators. The frequency responses and sensitivities to benzene, ethanol, and formaldehyde are tested and presented, respectively.
{"title":"A Highly-Sensitive Differential-Mode Microchemical Sensor Using TFBARs with On-Chip Microheater for Volatile Organic Compound (VOC) Detection","authors":"Heon-Min Lee, H. Kim, Hyung-Kyu Choi, Hee Chul Lee, H. Hong, Don-Hee Lee, Joung-Uk Bu, E. Yoon","doi":"10.1109/MEMSYS.2006.1627843","DOIUrl":"https://doi.org/10.1109/MEMSYS.2006.1627843","url":null,"abstract":"In this paper, we first report the microchemical sensor application of differential-mode Thin Film Bulk Acoustic Resonators (TFBARs) for Volatile Organic Compound (VOC) detection. Using the micro heater element, the membrane temperature of TFBARs can be increased up to 250 oC. Generally, VOCs are decomposed to CO and CO2at the temperature of above 200oC, the additional reference oscillator without VOC adsorption can be simply realized by heating the membrane. The RF signal mixer is used to determine the shift in oscillation frequency between sensing and reference oscillators. The frequency responses and sensitivities to benzene, ethanol, and formaldehyde are tested and presented, respectively.","PeriodicalId":250831,"journal":{"name":"19th IEEE International Conference on Micro Electro Mechanical Systems","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131520430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-05-08DOI: 10.1109/MEMSYS.2006.1627945
J. Oberhammer, M. Tang, A. Liu, G. Stemme
This paper reports on a tri-stable mechanically interlocking switch mechanism based on laterally moving curved-electrode electrostatic actuators. The in-line switches are realized in a true single-pole-double-throw configuration (SPDT) with three mechanically stable states: 1) input to first output; 2) switch off; 3) input to second output (on-off-on). The devices are fabricated in a silicon-on-glass process and are coated with sputtered gold, resulting in an all-metal switch. The switches feature active opening capability for which the curved-electrode actuators are utilized in their end-position where they develop their maximum force to guarantee a very large opening force which makes the switch less susceptible for contact stiction.
{"title":"Mechanically Tri-Stable In-Line Single-Pole-Double-Throw All-Metal Switch","authors":"J. Oberhammer, M. Tang, A. Liu, G. Stemme","doi":"10.1109/MEMSYS.2006.1627945","DOIUrl":"https://doi.org/10.1109/MEMSYS.2006.1627945","url":null,"abstract":"This paper reports on a tri-stable mechanically interlocking switch mechanism based on laterally moving curved-electrode electrostatic actuators. The in-line switches are realized in a true single-pole-double-throw configuration (SPDT) with three mechanically stable states: 1) input to first output; 2) switch off; 3) input to second output (on-off-on). The devices are fabricated in a silicon-on-glass process and are coated with sputtered gold, resulting in an all-metal switch. The switches feature active opening capability for which the curved-electrode actuators are utilized in their end-position where they develop their maximum force to guarantee a very large opening force which makes the switch less susceptible for contact stiction.","PeriodicalId":250831,"journal":{"name":"19th IEEE International Conference on Micro Electro Mechanical Systems","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127709288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-05-08DOI: 10.1109/MEMSYS.2006.1627877
A. Barlian, R. Narain, J.T. Li, C.E. Quance, A. Ho, V. Mukundan, B. Pruitt
We report on the design and performance of underwater piezoresistive floating-element shear stress sensors for direct dynamic measurements. Our design utilizes sidewall-implanted piezoresistors to measure lateral force and infer shear stress, and traditional top-implanted piezoresistors to detect normal forces and pressure transients. A gravity-driven flume was used to test the sensors. FEMLAB simulation and microscale Particle Image Velocimetry experiments were used to characterize the flow disturbance over different gap sizes. The results show no detectable disturbance of the flow over the range of sensor gap sizes evaluated (5-20 µ m).
{"title":"Piezoresistive MEMS Underwater Shear Stress Sensors","authors":"A. Barlian, R. Narain, J.T. Li, C.E. Quance, A. Ho, V. Mukundan, B. Pruitt","doi":"10.1109/MEMSYS.2006.1627877","DOIUrl":"https://doi.org/10.1109/MEMSYS.2006.1627877","url":null,"abstract":"We report on the design and performance of underwater piezoresistive floating-element shear stress sensors for direct dynamic measurements. Our design utilizes sidewall-implanted piezoresistors to measure lateral force and infer shear stress, and traditional top-implanted piezoresistors to detect normal forces and pressure transients. A gravity-driven flume was used to test the sensors. FEMLAB simulation and microscale Particle Image Velocimetry experiments were used to characterize the flow disturbance over different gap sizes. The results show no detectable disturbance of the flow over the range of sensor gap sizes evaluated (5-20 µ m).","PeriodicalId":250831,"journal":{"name":"19th IEEE International Conference on Micro Electro Mechanical Systems","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127793013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-05-08DOI: 10.1109/MEMSYS.2006.1627774
H. Jacobsen, H. Quenzer, B. Wagner, K. Ortner, T. Jung
Polycrystalline Lead Zirconate Titanate (PZT) thin films in the range of 3 µ m to 16 µ m were crack free deposited on silicon substrates in a high rate Gas Flow Sputtering process. Gas Flow Sputtering uses the hollow cathode effect which results into high deposition rates of about 200 nm/min to 250 nm/min.
{"title":"High-Rate Sputtering of Thick PZT Layers for MEMS Actuators","authors":"H. Jacobsen, H. Quenzer, B. Wagner, K. Ortner, T. Jung","doi":"10.1109/MEMSYS.2006.1627774","DOIUrl":"https://doi.org/10.1109/MEMSYS.2006.1627774","url":null,"abstract":"Polycrystalline Lead Zirconate Titanate (PZT) thin films in the range of 3 µ m to 16 µ m were crack free deposited on silicon substrates in a high rate Gas Flow Sputtering process. Gas Flow Sputtering uses the hollow cathode effect which results into high deposition rates of about 200 nm/min to 250 nm/min.","PeriodicalId":250831,"journal":{"name":"19th IEEE International Conference on Micro Electro Mechanical Systems","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133336309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-05-08DOI: 10.1109/MEMSYS.2006.1627942
S. Pranonsatit, G. Hong, A. Holmes, S. Lucyszyn
A novel, truly rotary, single-pole eight-throw (SP8T) RF MEMS switch is reported. The concept is an adaptation of the axial-gap electrostatic wobble motor. Details of the switch design and fabrication process are presented, together with initial test results for prototype devices. DC contact resistance measurements have been made over half a million rotations, yielding an average contact resistance of 2.5 Ω. The switch shows promising RF performance, with insertion loss varying smoothly from 0.6 dB at 2 GHz to 4 dB at 20 GHz, and isolation better than 31 dB across the frequency range 0.5 to 20 GHz.
{"title":"Rotary RF MEMS Switch Based on the Wobble Motor Principle","authors":"S. Pranonsatit, G. Hong, A. Holmes, S. Lucyszyn","doi":"10.1109/MEMSYS.2006.1627942","DOIUrl":"https://doi.org/10.1109/MEMSYS.2006.1627942","url":null,"abstract":"A novel, truly rotary, single-pole eight-throw (SP8T) RF MEMS switch is reported. The concept is an adaptation of the axial-gap electrostatic wobble motor. Details of the switch design and fabrication process are presented, together with initial test results for prototype devices. DC contact resistance measurements have been made over half a million rotations, yielding an average contact resistance of 2.5 Ω. The switch shows promising RF performance, with insertion loss varying smoothly from 0.6 dB at 2 GHz to 4 dB at 20 GHz, and isolation better than 31 dB across the frequency range 0.5 to 20 GHz.","PeriodicalId":250831,"journal":{"name":"19th IEEE International Conference on Micro Electro Mechanical Systems","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125038609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-05-08DOI: 10.1109/MEMSYS.2006.1627779
E. Quevy, Á. San Paulo, E. Basol, R. Howe, T. King, J. Bokor
This paper reports the characterization of poly-silicon-germanium disk resonators at frequencies ranging from 35 to 425MHz. The back-end-of-line process technology is based on Spacer definition of sub-100nm lateral gaps, and uses Aluminum as interconnect material for compatibility with advanced CMOS backend. Reported data are organized around transmission, temperature and stability characteristics, as well as scanning-AFM imaging of the radial vibration modes.
{"title":"Back-End-Of-Line Poly-Sige Disk Resonators","authors":"E. Quevy, Á. San Paulo, E. Basol, R. Howe, T. King, J. Bokor","doi":"10.1109/MEMSYS.2006.1627779","DOIUrl":"https://doi.org/10.1109/MEMSYS.2006.1627779","url":null,"abstract":"This paper reports the characterization of poly-silicon-germanium disk resonators at frequencies ranging from 35 to 425MHz. The back-end-of-line process technology is based on Spacer definition of sub-100nm lateral gaps, and uses Aluminum as interconnect material for compatibility with advanced CMOS backend. Reported data are organized around transmission, temperature and stability characteristics, as well as scanning-AFM imaging of the radial vibration modes.","PeriodicalId":250831,"journal":{"name":"19th IEEE International Conference on Micro Electro Mechanical Systems","volume":"135 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132368432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-05-08DOI: 10.1109/MEMSYS.2006.1627899
E. Hwang, J. Seo, Yong-Jun Kim
This paper presents a novel flexible tactile sensor, which can detect shear as well as normal load, simultaneously. The proposed sensor uses easy fabrication steps and low cost materials (i.e. Polymers, Copper and Nickel). This metal/polymer multilayer structure enables it to withstand overpressure, and to be mechanically flexible so that it can be attached to an arbitrary surface such as the body of house-helper robots as a sensitive skin. The sensing principle is embedding strain gauges at the centre of ductile polymer substrate. The unit cell characteristics against normal and shear load are evaluated. At normal load test, the sensitivity (8 µ V/kPa) is less than a silicon diaphragm based tactile sensor but the operational range is much wider (0 to 4 N). And the shear load can be detected by the voltage drop across one strain gauge is increasing while across the other is decreasing. A ring-shaped tactile images has been successfully captured by 8×8 flexible tactile sensor.
{"title":"A Polymer-Based Flexible Tactile Sensor for Normal and Shear Load Detection","authors":"E. Hwang, J. Seo, Yong-Jun Kim","doi":"10.1109/MEMSYS.2006.1627899","DOIUrl":"https://doi.org/10.1109/MEMSYS.2006.1627899","url":null,"abstract":"This paper presents a novel flexible tactile sensor, which can detect shear as well as normal load, simultaneously. The proposed sensor uses easy fabrication steps and low cost materials (i.e. Polymers, Copper and Nickel). This metal/polymer multilayer structure enables it to withstand overpressure, and to be mechanically flexible so that it can be attached to an arbitrary surface such as the body of house-helper robots as a sensitive skin. The sensing principle is embedding strain gauges at the centre of ductile polymer substrate. The unit cell characteristics against normal and shear load are evaluated. At normal load test, the sensitivity (8 µ V/kPa) is less than a silicon diaphragm based tactile sensor but the operational range is much wider (0 to 4 N). And the shear load can be detected by the voltage drop across one strain gauge is increasing while across the other is decreasing. A ring-shaped tactile images has been successfully captured by 8×8 flexible tactile sensor.","PeriodicalId":250831,"journal":{"name":"19th IEEE International Conference on Micro Electro Mechanical Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132827174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-05-08DOI: 10.1109/MEMSYS.2006.1627947
P. Stephanou, G. Piazza, C. D. White, M. Wijesundara, A. Pisano
A new class of mechanically coupled contour mode MEMS filters is demonstrated using a thin film piezoelectric aluminum nitride (AlN) process. The use of contour modes, whose frequencies are set by lithographically defined dimensions, permits the co-fabrication of multiple filters at arbitrary frequencies on the same chip. The stronger electromechnical coupling of the thin film piezoelectric structural material vis-à-vis electrostatically transduced devices results in lower insertion losses (as low as 1.5 dB) with termination values of 1 to 2.5 kΩ. Finally, filters synthesized using mechanically coupled resonators are fundamentally capable of wider bandwidths than electrically coupled ladder filters without requiring external tuning elements. Two designs for bandpass filters are analyzed, fabricated, and tested. The filters have center frequencies of 40 and 100 MHz.
{"title":"Mechanically Coupled Contour Mode Piezoelectric Aluminum Nitride MEMS Filters","authors":"P. Stephanou, G. Piazza, C. D. White, M. Wijesundara, A. Pisano","doi":"10.1109/MEMSYS.2006.1627947","DOIUrl":"https://doi.org/10.1109/MEMSYS.2006.1627947","url":null,"abstract":"A new class of mechanically coupled contour mode MEMS filters is demonstrated using a thin film piezoelectric aluminum nitride (AlN) process. The use of contour modes, whose frequencies are set by lithographically defined dimensions, permits the co-fabrication of multiple filters at arbitrary frequencies on the same chip. The stronger electromechnical coupling of the thin film piezoelectric structural material vis-à-vis electrostatically transduced devices results in lower insertion losses (as low as 1.5 dB) with termination values of 1 to 2.5 kΩ. Finally, filters synthesized using mechanically coupled resonators are fundamentally capable of wider bandwidths than electrically coupled ladder filters without requiring external tuning elements. Two designs for bandpass filters are analyzed, fabricated, and tested. The filters have center frequencies of 40 and 100 MHz.","PeriodicalId":250831,"journal":{"name":"19th IEEE International Conference on Micro Electro Mechanical Systems","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132682341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-05-08DOI: 10.1109/MEMSYS.2006.1627750
L. Xia, Wengang Wu, Jun Xu, Y. Hao, Yangyuan Wang
This paper reports for the first time a novel technique of nanoscale localized stress-introducing achieved by focused ion beam. The technique can be used to fabricate three-dimensional (3D) nanohelixes and implement 3D nanometer assemblies with the advantages of high flexibility, controllability and repeatability. Using the technique, 3D nanohelixes in both fixed-free and fixed-fixed forms with different structure parameters are successfully fabricated. In addition, a 3D cubic frame with 600-nm-wide beams is successfully assembled from two-dimensional patterns.
{"title":"3D Nanohelix Fabrication and 3D Nanometer Assembly by Focused Ion Beam Stress-Introducing Technique","authors":"L. Xia, Wengang Wu, Jun Xu, Y. Hao, Yangyuan Wang","doi":"10.1109/MEMSYS.2006.1627750","DOIUrl":"https://doi.org/10.1109/MEMSYS.2006.1627750","url":null,"abstract":"This paper reports for the first time a novel technique of nanoscale localized stress-introducing achieved by focused ion beam. The technique can be used to fabricate three-dimensional (3D) nanohelixes and implement 3D nanometer assemblies with the advantages of high flexibility, controllability and repeatability. Using the technique, 3D nanohelixes in both fixed-free and fixed-fixed forms with different structure parameters are successfully fabricated. In addition, a 3D cubic frame with 600-nm-wide beams is successfully assembled from two-dimensional patterns.","PeriodicalId":250831,"journal":{"name":"19th IEEE International Conference on Micro Electro Mechanical Systems","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117178013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-05-08DOI: 10.1109/MEMSYS.2006.1627880
J. Verd, G. Abadal, J. Teva, A. Uranga, F. Pérez-Murano, J. Esteve, N. Barniol
This paper presents the design, fabrication and characterization of a high-sensitivity mass sensor based on a laterally resonating metal cantilever that is fully compatible with standard CMOS technologies, and which post-CMOS process is based on a single step wet etching process without the need of any additional lithographic process. The system uses electrostatic actuation and capacitive readout performed by a high-sensitivity readout circuitry monolithically integrated. The expected mass sensitivity of the metal resonators presented is around 1 ag/Hz and 4.5 ag/Hz for punctual mass and uniform mass deposition respectively. These sensitivities have been corroborated experimentally by means of two kinds of experiments: deposition of a punctual mass and deposition of a thin film of gold.
{"title":"Resonant Metal Cantilever with Attogram/Hz Mass Sensitivity Fully Integrated in a Standard 0.35-μm CMOS Process","authors":"J. Verd, G. Abadal, J. Teva, A. Uranga, F. Pérez-Murano, J. Esteve, N. Barniol","doi":"10.1109/MEMSYS.2006.1627880","DOIUrl":"https://doi.org/10.1109/MEMSYS.2006.1627880","url":null,"abstract":"This paper presents the design, fabrication and characterization of a high-sensitivity mass sensor based on a laterally resonating metal cantilever that is fully compatible with standard CMOS technologies, and which post-CMOS process is based on a single step wet etching process without the need of any additional lithographic process. The system uses electrostatic actuation and capacitive readout performed by a high-sensitivity readout circuitry monolithically integrated. The expected mass sensitivity of the metal resonators presented is around 1 ag/Hz and 4.5 ag/Hz for punctual mass and uniform mass deposition respectively. These sensitivities have been corroborated experimentally by means of two kinds of experiments: deposition of a punctual mass and deposition of a thin film of gold.","PeriodicalId":250831,"journal":{"name":"19th IEEE International Conference on Micro Electro Mechanical Systems","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116998003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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