Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838543
Winston Sun, Antony W. T. Ho, W.J. Li, J. Mai, T. Mei
A novel MEMS surface-micromachined non-contact high-speed rotation sensor with total surface area under 4 mm/sup 2/ was developed using the MCNC Multi-User MEMS Processes (MUMPs). This paper reports the initial characterization of the sensor, including rotation and vibration tests. Initial results indicate that this piezoresistive sensor is capable of wirelessly measuring rotation speeds at /spl sim/2Hz/rpm/V with 5V input in the 100 to 6000 rpm rotation range. We believe our groundwork will allow the MEMS community to use the MUMPs foundry service to design simple and reliable high-speed rotation sensors that can be interfaced with commercial wireless chips for signal transmission.
{"title":"A foundry fabricated high-speed rotation sensor using off-chip RF wireless signal transmission","authors":"Winston Sun, Antony W. T. Ho, W.J. Li, J. Mai, T. Mei","doi":"10.1109/MEMSYS.2000.838543","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838543","url":null,"abstract":"A novel MEMS surface-micromachined non-contact high-speed rotation sensor with total surface area under 4 mm/sup 2/ was developed using the MCNC Multi-User MEMS Processes (MUMPs). This paper reports the initial characterization of the sensor, including rotation and vibration tests. Initial results indicate that this piezoresistive sensor is capable of wirelessly measuring rotation speeds at /spl sim/2Hz/rpm/V with 5V input in the 100 to 6000 rpm rotation range. We believe our groundwork will allow the MEMS community to use the MUMPs foundry service to design simple and reliable high-speed rotation sensors that can be interfaced with commercial wireless chips for signal transmission.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127528798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838618
V. Milanovic, M. Maharbiz, A. Singh, B. Warneke, Ningning Zhou, H. Chan, K. Pister
This paper presents the first implementation of batch-transferred microrelays for a broad range of RF applications and substrates. The transferred relays include a variety of electrostatic pull-down type structures, as well as see-saw type structures. The batch-transfer methodology allows integration of optimized MEMS in RF systems on substrates such as sapphire, GaAs, and even CMOS. Gold-to-gold contact series microrelays with insertion loss of <0.15 dB, and isolation better than 36 dB at frequencies from 45 MHz to 40.0 GHz are demonstrated, as well as shunt switches with >40 dB of isolation and <0.12 dB insertion loss in that frequency range. A novel device structure which combines the benefits of see-saw operation and both shunt and series switching was shown to improve isolation of a single switch by /spl sim/8 dB while maintaining low insertion loss.
{"title":"Microrelays for batch transfer integration in RF systems","authors":"V. Milanovic, M. Maharbiz, A. Singh, B. Warneke, Ningning Zhou, H. Chan, K. Pister","doi":"10.1109/MEMSYS.2000.838618","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838618","url":null,"abstract":"This paper presents the first implementation of batch-transferred microrelays for a broad range of RF applications and substrates. The transferred relays include a variety of electrostatic pull-down type structures, as well as see-saw type structures. The batch-transfer methodology allows integration of optimized MEMS in RF systems on substrates such as sapphire, GaAs, and even CMOS. Gold-to-gold contact series microrelays with insertion loss of <0.15 dB, and isolation better than 36 dB at frequencies from 45 MHz to 40.0 GHz are demonstrated, as well as shunt switches with >40 dB of isolation and <0.12 dB insertion loss in that frequency range. A novel device structure which combines the benefits of see-saw operation and both shunt and series switching was shown to improve isolation of a single switch by /spl sim/8 dB while maintaining low insertion loss.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127545339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838564
Y. Yokoyama, H. Ota, M. Takeda, T. Matsuura, M. Chabloz, S. Kaneko, A. Uemura
The authors have developed a new 2/spl times/2 micro-optical switch. The switch features a uni-directional input/output and a drive mechanism with latch functions. The newly developed structure combines two moving mirrors and a fixed V mirror to implement a 2/spl times/2 micro-optical switch with uni-directional input/output. Furthermore, the moving mirrors have been reduced in size by integrating the drive and latch functions by the use of magnetic shaft mirrors and driving coils. The micro-optical switch has been implemented as a module mounted in a ceramic package. The modular switch is 23.5/spl times/9.86/spl times/6.76 mm in size and provides a switching time of 1.3 ms for 15 V (469 mA) and an input pulse width of 1 ms. The reflectivity of the moving mirror is 98.6% (reflection loss: 0.06 dB) and the connection loss between the fixed mirror surfaces is 5.4 dB.
{"title":"Micro-optical switch with uni-directional I/O fibers","authors":"Y. Yokoyama, H. Ota, M. Takeda, T. Matsuura, M. Chabloz, S. Kaneko, A. Uemura","doi":"10.1109/MEMSYS.2000.838564","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838564","url":null,"abstract":"The authors have developed a new 2/spl times/2 micro-optical switch. The switch features a uni-directional input/output and a drive mechanism with latch functions. The newly developed structure combines two moving mirrors and a fixed V mirror to implement a 2/spl times/2 micro-optical switch with uni-directional input/output. Furthermore, the moving mirrors have been reduced in size by integrating the drive and latch functions by the use of magnetic shaft mirrors and driving coils. The micro-optical switch has been implemented as a module mounted in a ceramic package. The modular switch is 23.5/spl times/9.86/spl times/6.76 mm in size and provides a switching time of 1.3 ms for 15 V (469 mA) and an input pulse width of 1 ms. The reflectivity of the moving mirror is 98.6% (reflection loss: 0.06 dB) and the connection loss between the fixed mirror surfaces is 5.4 dB.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129962277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838511
H. Takeuchi, K. Nakamura, N. Shimizu, N. Shibaike
A micro-reducer, which is characterized by its smaller size, higher reduction ratio and higher reliability, has been successfully developed. To improve the mechanical interface (microscopic design and tribology) of such a micro-mechanism, the configuration, materials, fabrication and surface modification were investigated. The internal energy dissipation of the micro-reducer with two types of bearings and lubrications was measured. Finally the developed micro-reducer, which comprises a 3K-type mechanical paradox planetary gear reduction system and simple gear trains, with oil-lubricated rolling bearing and raw gears was observed to have sufficient performance after 5,000,000 rotations.
{"title":"Optimization of mechanical interface for a practical micro-reducer","authors":"H. Takeuchi, K. Nakamura, N. Shimizu, N. Shibaike","doi":"10.1109/MEMSYS.2000.838511","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838511","url":null,"abstract":"A micro-reducer, which is characterized by its smaller size, higher reduction ratio and higher reliability, has been successfully developed. To improve the mechanical interface (microscopic design and tribology) of such a micro-mechanism, the configuration, materials, fabrication and surface modification were investigated. The internal energy dissipation of the micro-reducer with two types of bearings and lubrications was measured. Finally the developed micro-reducer, which comprises a 3K-type mechanical paradox planetary gear reduction system and simple gear trains, with oil-lubricated rolling bearing and raw gears was observed to have sufficient performance after 5,000,000 rotations.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120950764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838521
R. Kazinczi, J. Mollinger, A. Bossche
This study focuses on a new reliability problem of micromechanical structures based on thin silicon nitride films. Silicon nitride is used in numerous MEMS applications thanks to its good mechanical and electrical properties. The SiN/sub x/ micromechanical structures usually serve as supporting elements such as membranes, plates and cantilevers. A new failure mechanism is found in thin resonating SiN/sub x/ structures operating in air. The stiffness of the structure is changing due to surface oxidation. The surface oxide layer can crack and recover during operation of the device. This results in unstable resonance frequency and failure of the resonant mode MEMS device.
{"title":"New failure mechanism in silicon nitride resonators","authors":"R. Kazinczi, J. Mollinger, A. Bossche","doi":"10.1109/MEMSYS.2000.838521","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838521","url":null,"abstract":"This study focuses on a new reliability problem of micromechanical structures based on thin silicon nitride films. Silicon nitride is used in numerous MEMS applications thanks to its good mechanical and electrical properties. The SiN/sub x/ micromechanical structures usually serve as supporting elements such as membranes, plates and cantilevers. A new failure mechanism is found in thin resonating SiN/sub x/ structures operating in air. The stiffness of the structure is changing due to surface oxidation. The surface oxide layer can crack and recover during operation of the device. This results in unstable resonance frequency and failure of the resonant mode MEMS device.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"344 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121972799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838606
A. Garnier, T. Bourouina, H. Fujita, E. Orsier, T. Masuzawa, T. Hiramoto, J.-C. Peuzin
We have fabricated and successfully operated a new 2D micro-optical scanner based on contactless magnetostrictive (MS) actuation using only one coil. A Si cantilever coated with a sputter-deposited MS film is vibrated simultaneously in both bending and torsion modes at high frequencies (10-50 kHz). It exhibits the maximum optical deflection of /spl plusmn/12 degrees at an excitation field of 4 mT; this is only 2% of the saturation field of the MS material. Moreover, the contactless magnetic actuation enabled an easy wireless vacuum encapsulation that gave Q-factors up to 1400 and improved the vibration amplitude four times more than that in air.
{"title":"A fast, robust and simple 2-D micro-optical scanner based on contactless magnetostrictive actuation","authors":"A. Garnier, T. Bourouina, H. Fujita, E. Orsier, T. Masuzawa, T. Hiramoto, J.-C. Peuzin","doi":"10.1109/MEMSYS.2000.838606","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838606","url":null,"abstract":"We have fabricated and successfully operated a new 2D micro-optical scanner based on contactless magnetostrictive (MS) actuation using only one coil. A Si cantilever coated with a sputter-deposited MS film is vibrated simultaneously in both bending and torsion modes at high frequencies (10-50 kHz). It exhibits the maximum optical deflection of /spl plusmn/12 degrees at an excitation field of 4 mT; this is only 2% of the saturation field of the MS material. Moreover, the contactless magnetic actuation enabled an easy wireless vacuum encapsulation that gave Q-factors up to 1400 and improved the vibration amplitude four times more than that in air.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126093994","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838547
E. Carlen, C. Mastrangelo
A new, active, normally-open blocking microvalve that uses the thermal expansion of a sealed, thin paraffin patch for actuation has been fabricated and tested. The entire structure is batch-fabricated by surface micromachining the actuator and channel materials on top of a single substrate. The paraffin actuated microvalves are suitable for applications requiring many devices on a single die, low processing temperatures, and simple, nonbonded process technology. Gas flow rates in the 0.1-2.0 sccm range have been measured for several devices with actuation powers less than 50 mW.
{"title":"Paraffin actuated surface micromachined valves","authors":"E. Carlen, C. Mastrangelo","doi":"10.1109/MEMSYS.2000.838547","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838547","url":null,"abstract":"A new, active, normally-open blocking microvalve that uses the thermal expansion of a sealed, thin paraffin patch for actuation has been fabricated and tested. The entire structure is batch-fabricated by surface micromachining the actuator and channel materials on top of a single substrate. The paraffin actuated microvalves are suitable for applications requiring many devices on a single die, low processing temperatures, and simple, nonbonded process technology. Gas flow rates in the 0.1-2.0 sccm range have been measured for several devices with actuation powers less than 50 mW.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132792354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838591
H. Nguyen, P. Patterson, H. Toshiyoshi, M. Wu
We report on a new wafer transfer technique that can remove and transfer surface-micromachined layers to application-specific substrates. This process, however, is not limited to only MEMS devices and can be applicable to other semiconductor devices. Successful transfer of a 1 cm/spl times/1 cm MEMS chip with electrostatically actuated curled cantilever switches to a transparent quartz substrate has been demonstrated. Pull-in voltage for transferred devices is 31 V compared with 23 V for devices on standard silicon substrates.
我们报告了一种新的晶圆转移技术，可以去除和转移表面微加工层到应用特定的基板上。然而，该工艺不仅限于MEMS器件，还可以适用于其他半导体器件。成功地转移了1 cm/spl倍/1 cm MEMS芯片与静电驱动卷曲悬臂开关到透明石英衬底已经证明。转移器件的拉入电压为31 V，而标准硅衬底上的器件为23 V。
{"title":"A substrate-independent wafer transfer technique for surface-micromachined devices","authors":"H. Nguyen, P. Patterson, H. Toshiyoshi, M. Wu","doi":"10.1109/MEMSYS.2000.838591","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838591","url":null,"abstract":"We report on a new wafer transfer technique that can remove and transfer surface-micromachined layers to application-specific substrates. This process, however, is not limited to only MEMS devices and can be applicable to other semiconductor devices. Successful transfer of a 1 cm/spl times/1 cm MEMS chip with electrostatically actuated curled cantilever switches to a transparent quartz substrate has been demonstrated. Pull-in voltage for transferred devices is 31 V compared with 23 V for devices on standard silicon substrates.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130539742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838524
F. Niklaus, P. Enoksson, Edvard Kälvesten, G. Stemme
In this paper we present guidelines for void free adhesive bonding of 10 cm diameter wafers. We have systematically investigated the influence of different bonding parameters on void formation in the bond. The layer thicknesses of the tested polymer coatings are between 1 /spl mu/m and 12 /spl mu/m. The polymer material, the bonding pressure and the pre-curing time and temperature for the polymer has shown significant influence on void formation in the bond. High bonding pressure and pre-curing times/temperatures that are specific to the polymer material counteract void formation. Process parameters for achieving void-free bonds using benzocyclobutene (BCB) and photoresist coatings as adhesive materials are given. Excellent bonding results have been achieved with BCB as bonding material.
{"title":"Void-free full wafer adhesive bonding","authors":"F. Niklaus, P. Enoksson, Edvard Kälvesten, G. Stemme","doi":"10.1109/MEMSYS.2000.838524","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838524","url":null,"abstract":"In this paper we present guidelines for void free adhesive bonding of 10 cm diameter wafers. We have systematically investigated the influence of different bonding parameters on void formation in the bond. The layer thicknesses of the tested polymer coatings are between 1 /spl mu/m and 12 /spl mu/m. The polymer material, the bonding pressure and the pre-curing time and temperature for the polymer has shown significant influence on void formation in the bond. High bonding pressure and pre-curing times/temperatures that are specific to the polymer material counteract void formation. Process parameters for achieving void-free bonds using benzocyclobutene (BCB) and photoresist coatings as adhesive materials are given. Excellent bonding results have been achieved with BCB as bonding material.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126960417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838534
J. R. Webster, M. Burns, D. T. Burke, C. Mastrangelo
A monolithic capillary electrophoresis system with integrated on-chip fluorescence detection has been microfabricated on a silicon substrate. Photodiodes in the silicon substrate measure fluorescence emitted from eluting molecules. An on-chip thin film interference filter prevents excitation light from inhibiting the fluorescence detection. A transparent conducting ground plane prevents the high electric fields from interfering with the photodiode response. A truly monolithic device has been fabricated using surface micromachining methods eliminating elaborate bonding procedures. Separations of DNA restriction fragments have been performed in these devices with femtogram detection limits using SYBR Green I intercalating dye.
在硅衬底上制备了一种集成片上荧光检测的单片毛细管电泳系统。硅衬底中的光电二极管测量从洗脱分子发出的荧光。片上薄膜干涉滤光片防止激发光抑制荧光检测。透明的导电接地面可防止高电场干扰光电二极管的响应。一个真正的单片器件已经制造使用表面微加工方法，消除了复杂的粘合程序。使用SYBR Green I插层染料，在这些装置中进行了DNA限制性片段的分离，具有飞图检测限。
{"title":"Electrophoresis system with integrated on-chip fluorescence detection","authors":"J. R. Webster, M. Burns, D. T. Burke, C. Mastrangelo","doi":"10.1109/MEMSYS.2000.838534","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838534","url":null,"abstract":"A monolithic capillary electrophoresis system with integrated on-chip fluorescence detection has been microfabricated on a silicon substrate. Photodiodes in the silicon substrate measure fluorescence emitted from eluting molecules. An on-chip thin film interference filter prevents excitation light from inhibiting the fluorescence detection. A transparent conducting ground plane prevents the high electric fields from interfering with the photodiode response. A truly monolithic device has been fabricated using surface micromachining methods eliminating elaborate bonding procedures. Separations of DNA restriction fragments have been performed in these devices with femtogram detection limits using SYBR Green I intercalating dye.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"223 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115617517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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