Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838567
Huikai Xie, G. Fedder
This paper reports the first design and experimental results of a z-axis accelerometer that utilizes the sidewall capacitance change of multi-conductor comb fingers. The accelerometer has a fully differential capacitive bridge interface and its fabrication is compatible with standard CMOS processes. The frequency response of the accelerometer is characterized both electrically and optically and about 9.3 kHz resonant frequency is measured, which matches MEMCAD simulation within 15%. Measured sensitivity is 0.5 mV/g with less than -40 dB cross-axis sensitivity, noise floor 6 mg/rtHz, and linear range from -27 g to 27 g.
{"title":"A CMOS z-axis capacitive accelerometer with comb-finger sensing","authors":"Huikai Xie, G. Fedder","doi":"10.1109/MEMSYS.2000.838567","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838567","url":null,"abstract":"This paper reports the first design and experimental results of a z-axis accelerometer that utilizes the sidewall capacitance change of multi-conductor comb fingers. The accelerometer has a fully differential capacitive bridge interface and its fabrication is compatible with standard CMOS processes. The frequency response of the accelerometer is characterized both electrically and optically and about 9.3 kHz resonant frequency is measured, which matches MEMCAD simulation within 15%. Measured sensitivity is 0.5 mV/g with less than -40 dB cross-axis sensitivity, noise floor 6 mg/rtHz, and linear range from -27 g to 27 g.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115455412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838593
J.Y. Park, G. Kim, K. Chung, J. Bu
RF microswitches are newly designed and fabricated with various structural geometry of transmission line, hinge, and movable plate formed by using electroplating techniques, low temperature processes, and dry releasing techniques. In particular, Strontium Titanate Oxide (SrTiO/sub 3/) with high dielectric constant is investigated for high switching on/off ratio and on capacitance as a dielectric layer of a micromechanical capacitive switch. Achieved lowest actuation voltage of the fabricated switches is 8 volts. The fabricated switch has low insertion loss of 0.08 dB at 10 GHz, isolation of 42 dB at 5 GHz, on/off ratio of 600, and on capacitance of 50 pF, respectively. These switches also have high current carry capability due to the use of electroplated Au or Cux.
{"title":"Electroplated rf MEMS capacitive switches","authors":"J.Y. Park, G. Kim, K. Chung, J. Bu","doi":"10.1109/MEMSYS.2000.838593","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838593","url":null,"abstract":"RF microswitches are newly designed and fabricated with various structural geometry of transmission line, hinge, and movable plate formed by using electroplating techniques, low temperature processes, and dry releasing techniques. In particular, Strontium Titanate Oxide (SrTiO/sub 3/) with high dielectric constant is investigated for high switching on/off ratio and on capacitance as a dielectric layer of a micromechanical capacitive switch. Achieved lowest actuation voltage of the fabricated switches is 8 volts. The fabricated switch has low insertion loss of 0.08 dB at 10 GHz, isolation of 42 dB at 5 GHz, on/off ratio of 600, and on capacitance of 50 pF, respectively. These switches also have high current carry capability due to the use of electroplated Au or Cux.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115664538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838575
Yong Xu, C. Chiu, F. Jiang, Q. Lin, Y. Tai
We report here a novel mass flowmeter using a multisensor chip that includes a 1-D array of pressure, temperature and shear stress sensors. This shear stress sensor based flowmeter is capable of high sensitivity and wide measurement range. Our study also shows that the mass flowmeter using shear-stress sensors produces better resolution than that from pressure sensors in the laminar flow regime. Extensive tests have been carried out to evaluate the effects of overheat ratio, channel height and gas properties. We also find the V/sup 2//spl prop//spl tau//sup 1/3/ law for conventional hot film sensors does not hold for our micromachined shear stress sensor.
{"title":"Mass flowmeter using a multi-sensor chip","authors":"Yong Xu, C. Chiu, F. Jiang, Q. Lin, Y. Tai","doi":"10.1109/MEMSYS.2000.838575","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838575","url":null,"abstract":"We report here a novel mass flowmeter using a multisensor chip that includes a 1-D array of pressure, temperature and shear stress sensors. This shear stress sensor based flowmeter is capable of high sensitivity and wide measurement range. Our study also shows that the mass flowmeter using shear-stress sensors produces better resolution than that from pressure sensors in the laminar flow regime. Extensive tests have been carried out to evaluate the effects of overheat ratio, channel height and gas properties. We also find the V/sup 2//spl prop//spl tau//sup 1/3/ law for conventional hot film sensors does not hold for our micromachined shear stress sensor.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123971496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838520
H. Ota, L. Li, M. Takeda, H. Narumiya, T. Ohara, K. Namura
The authors have developed a general-purpose system that can measure very low torques in the order of 10/sup -7/ Nm. The new method proposed here uses wind pressure to apply a load to a turbine attached to the output shaft of the device. It can therefore be used for all rotating micro-devices. The use of wind pressure reduces the loss during measurement, and makes it possible to measure low levels of torque easily by simply attaching the turbine to the device. In the present study, the measuring principle of the new system was verified. In addition, a prototype micromotor 1.6 mm in diameter was fabricated and used to demonstrate that the new system was able to measure torques in the order of 10/sup -7/ Nm while the motor was in operation.
{"title":"Torque measurement method using air turbine for micro devices","authors":"H. Ota, L. Li, M. Takeda, H. Narumiya, T. Ohara, K. Namura","doi":"10.1109/MEMSYS.2000.838520","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838520","url":null,"abstract":"The authors have developed a general-purpose system that can measure very low torques in the order of 10/sup -7/ Nm. The new method proposed here uses wind pressure to apply a load to a turbine attached to the output shaft of the device. It can therefore be used for all rotating micro-devices. The use of wind pressure reduces the loss during measurement, and makes it possible to measure low levels of torque easily by simply attaching the turbine to the device. In the present study, the measuring principle of the new system was verified. In addition, a prototype micromotor 1.6 mm in diameter was fabricated and used to demonstrate that the new system was able to measure torques in the order of 10/sup -7/ Nm while the motor was in operation.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"216 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124261413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838491
E. Meng, Xuan-Qi Wang, H. Mak, Y. Tai
Two generations of check-valved silicone rubber diaphragm pumps are presented. Significant improvements have been made from pump to pump including the design and fabrication of a double-sided check valve, a bossed silicone membrane, and silicone gaskets. Water flow rates of up to 13 ml/min and a maximum back pressure of 5.9 kPa were achieved through pneumatic operation with an external compressed air source. Using a custom designed solenoid actuator, flow rates of up to 4.5 ml/min and a maximum back pressure of 2.1 kPa have been demonstrated.
{"title":"A check-valved silicone diaphragm pump","authors":"E. Meng, Xuan-Qi Wang, H. Mak, Y. Tai","doi":"10.1109/MEMSYS.2000.838491","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838491","url":null,"abstract":"Two generations of check-valved silicone rubber diaphragm pumps are presented. Significant improvements have been made from pump to pump including the design and fabrication of a double-sided check valve, a bossed silicone membrane, and silicone gaskets. Water flow rates of up to 13 ml/min and a maximum back pressure of 5.9 kPa were achieved through pneumatic operation with an external compressed air source. Using a custom designed solenoid actuator, flow rates of up to 4.5 ml/min and a maximum back pressure of 2.1 kPa have been demonstrated.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124360719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838616
S. Sugimoto, S. Tanaka, Jingfeng Li, R. Watanabe, M. Esashi
This paper describes a novel process, "Silicon Carbide Micro-reaction-sintering", to fabricate high-aspect-ratio silicon carbide microstructures. This process consists of micromachining of silicon molds, filling of material powders ( a-silicon carbide, graphite, silicon and phenol resin) into the molds, bonding of the molds with adhesive and reaction-sintering by hot isostatic pressing (HIP). Using our process, we have successfully fabricated silicon carbide microrotors of 5 and 10 mm diameters for micromachined gas turbines. We observed the cross section of the microrotors with a scanning electron microscope (SEM). The SEM observation demonstrated that the material powder was densely reaction-sintered by HIP. We also investigated the compositions of the microrotors by X-ray diffraction (XRD) analysis. The XRD analyses proved that graphite in the material powder reacted with melted silicon derived from the mold, and consequently /spl beta/-silicon carbide was produced around the /spl alpha/-silicon carbide originally included in the material powder.
{"title":"Silicon carbide micro-reaction-sintering using a multilayer silicon mold","authors":"S. Sugimoto, S. Tanaka, Jingfeng Li, R. Watanabe, M. Esashi","doi":"10.1109/MEMSYS.2000.838616","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838616","url":null,"abstract":"This paper describes a novel process, \"Silicon Carbide Micro-reaction-sintering\", to fabricate high-aspect-ratio silicon carbide microstructures. This process consists of micromachining of silicon molds, filling of material powders ( a-silicon carbide, graphite, silicon and phenol resin) into the molds, bonding of the molds with adhesive and reaction-sintering by hot isostatic pressing (HIP). Using our process, we have successfully fabricated silicon carbide microrotors of 5 and 10 mm diameters for micromachined gas turbines. We observed the cross section of the microrotors with a scanning electron microscope (SEM). The SEM observation demonstrated that the material powder was densely reaction-sintered by HIP. We also investigated the compositions of the microrotors by X-ray diffraction (XRD) analysis. The XRD analyses proved that graphite in the material powder reacted with melted silicon derived from the mold, and consequently /spl beta/-silicon carbide was produced around the /spl alpha/-silicon carbide originally included in the material powder.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116365593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838540
A. Chavan, K. Wise
This paper presents an integrated multitransducer capacitive barometric pressure sensor that is vacuum-sealed at wafer level. The interface circuitry is integrated directly within the sealed reference cavity, making the device immune to parasitic environmental effects. The overall device process merges BiCMOS circuitry with a dissolved wafer transducer process, is compatible with bulk- and surface-micromachining, and employs chemical mechanical polishing (CMP), anodic bonding, and hermetic lead transfers. The sensor achieves 15b resolution and is suitable for low-cost packaging. The device is composed of a programmable switched capacitor readout circuit, five segmented-range pressure transducers, and a reference capacitor, all integrated on a 7.5/spl times/6.5 mm/sup 2/ die using 3 /spl mu/m features.
{"title":"A monolithic fully-integrated vacuum-sealed CMOS pressure sensor","authors":"A. Chavan, K. Wise","doi":"10.1109/MEMSYS.2000.838540","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838540","url":null,"abstract":"This paper presents an integrated multitransducer capacitive barometric pressure sensor that is vacuum-sealed at wafer level. The interface circuitry is integrated directly within the sealed reference cavity, making the device immune to parasitic environmental effects. The overall device process merges BiCMOS circuitry with a dissolved wafer transducer process, is compatible with bulk- and surface-micromachining, and employs chemical mechanical polishing (CMP), anodic bonding, and hermetic lead transfers. The sensor achieves 15b resolution and is suitable for low-cost packaging. The device is composed of a programmable switched capacitor readout circuit, five segmented-range pressure transducers, and a reference capacitor, all integrated on a 7.5/spl times/6.5 mm/sup 2/ die using 3 /spl mu/m features.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116296245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838545
C.C. Ma, R. Wang, Q. Sun, Y. Zohar, M. Wong
Relatively independent of the physical dimensions of micro-actuators based on shape memory alloys (SMA), the reported frequency response typically is capped at a few tens of Hz. The slow response agrees well with that of the rotating micro-actuators fabricated in this work. On the other hand, based on heat transfer analyses, a theoretical response time of the order of a few milli-seconds should be possible for scaled microactuators, thus implying a frequency performance of at least a few hundred Hz. Therefore it is concluded that the response of SMA micro-actuators may not be limited by heat transfer, but by the slow rate of phase transformation between the austenitic and the martensitic phases. This is consistent with the slow phase growth rate of about 0.3 /spl mu/m/s observed using in-situ transmission electron microscopy.
{"title":"Frequency response of TiNi shape memory alloy thin film micro-actuators","authors":"C.C. Ma, R. Wang, Q. Sun, Y. Zohar, M. Wong","doi":"10.1109/MEMSYS.2000.838545","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838545","url":null,"abstract":"Relatively independent of the physical dimensions of micro-actuators based on shape memory alloys (SMA), the reported frequency response typically is capped at a few tens of Hz. The slow response agrees well with that of the rotating micro-actuators fabricated in this work. On the other hand, based on heat transfer analyses, a theoretical response time of the order of a few milli-seconds should be possible for scaled microactuators, thus implying a frequency performance of at least a few hundred Hz. Therefore it is concluded that the response of SMA micro-actuators may not be limited by heat transfer, but by the slow rate of phase transformation between the austenitic and the martensitic phases. This is consistent with the slow phase growth rate of about 0.3 /spl mu/m/s observed using in-situ transmission electron microscopy.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123397225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838508
N. Miki, I. Shimoyama
A flight mechanism with 2 mm long micro-rotational wings has been designed and fabricated. The rotational wings are made of cobalt-nickel alloy and rotate in an alternating magnetic field. The flight mechanism is composed of the rotational wings, non-rotational body and disk. The wings and the disk are attached to glass rod and rotate together. As the rotating frequency increases, the wings and the disk move up and the disk pushes the body upwards, and then the whole structures take off. The characteristics of the rotational wings are investigated. A scale effect is found; the characteristics of the rotational wings get better as the wing length decreases. It is considered to be caused by the wing-longitudinal flow, which is often ignored in high Reynolds number flow. The non-rotational body has soft magnetic films. Due to the magnetic anisotropic torque exerted on the films, the body can maintain its attitude stability passively. The flight mechanism that weighs 1.6 mg succeeded in taking-off at 438 Hz keeping the attitude of the body stable. The magnetic torque between the external magnetic field and the wings must be larger than the torque from the air and the friction in order to keep the wings rotating. The relationship between the required magnetic field and the rotating frequency is investigated.
{"title":"A micro-flight mechanism with rotational wings","authors":"N. Miki, I. Shimoyama","doi":"10.1109/MEMSYS.2000.838508","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838508","url":null,"abstract":"A flight mechanism with 2 mm long micro-rotational wings has been designed and fabricated. The rotational wings are made of cobalt-nickel alloy and rotate in an alternating magnetic field. The flight mechanism is composed of the rotational wings, non-rotational body and disk. The wings and the disk are attached to glass rod and rotate together. As the rotating frequency increases, the wings and the disk move up and the disk pushes the body upwards, and then the whole structures take off. The characteristics of the rotational wings are investigated. A scale effect is found; the characteristics of the rotational wings get better as the wing length decreases. It is considered to be caused by the wing-longitudinal flow, which is often ignored in high Reynolds number flow. The non-rotational body has soft magnetic films. Due to the magnetic anisotropic torque exerted on the films, the body can maintain its attitude stability passively. The flight mechanism that weighs 1.6 mg succeeded in taking-off at 438 Hz keeping the attitude of the body stable. The magnetic torque between the external magnetic field and the wings must be larger than the torque from the air and the friction in order to keep the wings rotating. The relationship between the required magnetic field and the rotating frequency is investigated.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125838906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838603
A. Tixier, Y. Mita, S. Oshima, Jiang Guoy, H. Fujita
This paper reports the realization of a pigtailed silicon platform with 8 WDM filters based on a new 3-D packaging technology. Four silicon pieces are released out of a silicon wafer by using ICP-RIE as a very accurate dicing tool. One edge of the piece containing the filters is patterned into pin-shapes to be vertically inserted into a mother board with electrical connections. A V-groove board for the optical fibers is mechanically aligned in the mother board. This technology enables precise assembly of active optical devices with ribbon fibers, electrical connections to 3-D micromechanical subsystems and reconfiguring the system in the module level.
{"title":"3-D microsystem packaging for interconnecting electrical, optical and mechanical microdevices to the external world","authors":"A. Tixier, Y. Mita, S. Oshima, Jiang Guoy, H. Fujita","doi":"10.1109/MEMSYS.2000.838603","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838603","url":null,"abstract":"This paper reports the realization of a pigtailed silicon platform with 8 WDM filters based on a new 3-D packaging technology. Four silicon pieces are released out of a silicon wafer by using ICP-RIE as a very accurate dicing tool. One edge of the piece containing the filters is patterned into pin-shapes to be vertically inserted into a mother board with electrical connections. A V-groove board for the optical fibers is mechanically aligned in the mother board. This technology enables precise assembly of active optical devices with ribbon fibers, electrical connections to 3-D micromechanical subsystems and reconfiguring the system in the module level.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125753862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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