Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838534
J. R. Webster, M. Burns, D. T. Burke, C. Mastrangelo
A monolithic capillary electrophoresis system with integrated on-chip fluorescence detection has been microfabricated on a silicon substrate. Photodiodes in the silicon substrate measure fluorescence emitted from eluting molecules. An on-chip thin film interference filter prevents excitation light from inhibiting the fluorescence detection. A transparent conducting ground plane prevents the high electric fields from interfering with the photodiode response. A truly monolithic device has been fabricated using surface micromachining methods eliminating elaborate bonding procedures. Separations of DNA restriction fragments have been performed in these devices with femtogram detection limits using SYBR Green I intercalating dye.
在硅衬底上制备了一种集成片上荧光检测的单片毛细管电泳系统。硅衬底中的光电二极管测量从洗脱分子发出的荧光。片上薄膜干涉滤光片防止激发光抑制荧光检测。透明的导电接地面可防止高电场干扰光电二极管的响应。一个真正的单片器件已经制造使用表面微加工方法，消除了复杂的粘合程序。使用SYBR Green I插层染料，在这些装置中进行了DNA限制性片段的分离，具有飞图检测限。
{"title":"Electrophoresis system with integrated on-chip fluorescence detection","authors":"J. R. Webster, M. Burns, D. T. Burke, C. Mastrangelo","doi":"10.1109/MEMSYS.2000.838534","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838534","url":null,"abstract":"A monolithic capillary electrophoresis system with integrated on-chip fluorescence detection has been microfabricated on a silicon substrate. Photodiodes in the silicon substrate measure fluorescence emitted from eluting molecules. An on-chip thin film interference filter prevents excitation light from inhibiting the fluorescence detection. A transparent conducting ground plane prevents the high electric fields from interfering with the photodiode response. A truly monolithic device has been fabricated using surface micromachining methods eliminating elaborate bonding procedures. Separations of DNA restriction fragments have been performed in these devices with femtogram detection limits using SYBR Green I intercalating dye.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"223 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115617517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838545
C.C. Ma, R. Wang, Q. Sun, Y. Zohar, M. Wong
Relatively independent of the physical dimensions of micro-actuators based on shape memory alloys (SMA), the reported frequency response typically is capped at a few tens of Hz. The slow response agrees well with that of the rotating micro-actuators fabricated in this work. On the other hand, based on heat transfer analyses, a theoretical response time of the order of a few milli-seconds should be possible for scaled microactuators, thus implying a frequency performance of at least a few hundred Hz. Therefore it is concluded that the response of SMA micro-actuators may not be limited by heat transfer, but by the slow rate of phase transformation between the austenitic and the martensitic phases. This is consistent with the slow phase growth rate of about 0.3 /spl mu/m/s observed using in-situ transmission electron microscopy.
{"title":"Frequency response of TiNi shape memory alloy thin film micro-actuators","authors":"C.C. Ma, R. Wang, Q. Sun, Y. Zohar, M. Wong","doi":"10.1109/MEMSYS.2000.838545","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838545","url":null,"abstract":"Relatively independent of the physical dimensions of micro-actuators based on shape memory alloys (SMA), the reported frequency response typically is capped at a few tens of Hz. The slow response agrees well with that of the rotating micro-actuators fabricated in this work. On the other hand, based on heat transfer analyses, a theoretical response time of the order of a few milli-seconds should be possible for scaled microactuators, thus implying a frequency performance of at least a few hundred Hz. Therefore it is concluded that the response of SMA micro-actuators may not be limited by heat transfer, but by the slow rate of phase transformation between the austenitic and the martensitic phases. This is consistent with the slow phase growth rate of about 0.3 /spl mu/m/s observed using in-situ transmission electron microscopy.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123397225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838575
Yong Xu, C. Chiu, F. Jiang, Q. Lin, Y. Tai
We report here a novel mass flowmeter using a multisensor chip that includes a 1-D array of pressure, temperature and shear stress sensors. This shear stress sensor based flowmeter is capable of high sensitivity and wide measurement range. Our study also shows that the mass flowmeter using shear-stress sensors produces better resolution than that from pressure sensors in the laminar flow regime. Extensive tests have been carried out to evaluate the effects of overheat ratio, channel height and gas properties. We also find the V/sup 2//spl prop//spl tau//sup 1/3/ law for conventional hot film sensors does not hold for our micromachined shear stress sensor.
{"title":"Mass flowmeter using a multi-sensor chip","authors":"Yong Xu, C. Chiu, F. Jiang, Q. Lin, Y. Tai","doi":"10.1109/MEMSYS.2000.838575","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838575","url":null,"abstract":"We report here a novel mass flowmeter using a multisensor chip that includes a 1-D array of pressure, temperature and shear stress sensors. This shear stress sensor based flowmeter is capable of high sensitivity and wide measurement range. Our study also shows that the mass flowmeter using shear-stress sensors produces better resolution than that from pressure sensors in the laminar flow regime. Extensive tests have been carried out to evaluate the effects of overheat ratio, channel height and gas properties. We also find the V/sup 2//spl prop//spl tau//sup 1/3/ law for conventional hot film sensors does not hold for our micromachined shear stress sensor.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123971496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838520
H. Ota, L. Li, M. Takeda, H. Narumiya, T. Ohara, K. Namura
The authors have developed a general-purpose system that can measure very low torques in the order of 10/sup -7/ Nm. The new method proposed here uses wind pressure to apply a load to a turbine attached to the output shaft of the device. It can therefore be used for all rotating micro-devices. The use of wind pressure reduces the loss during measurement, and makes it possible to measure low levels of torque easily by simply attaching the turbine to the device. In the present study, the measuring principle of the new system was verified. In addition, a prototype micromotor 1.6 mm in diameter was fabricated and used to demonstrate that the new system was able to measure torques in the order of 10/sup -7/ Nm while the motor was in operation.
{"title":"Torque measurement method using air turbine for micro devices","authors":"H. Ota, L. Li, M. Takeda, H. Narumiya, T. Ohara, K. Namura","doi":"10.1109/MEMSYS.2000.838520","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838520","url":null,"abstract":"The authors have developed a general-purpose system that can measure very low torques in the order of 10/sup -7/ Nm. The new method proposed here uses wind pressure to apply a load to a turbine attached to the output shaft of the device. It can therefore be used for all rotating micro-devices. The use of wind pressure reduces the loss during measurement, and makes it possible to measure low levels of torque easily by simply attaching the turbine to the device. In the present study, the measuring principle of the new system was verified. In addition, a prototype micromotor 1.6 mm in diameter was fabricated and used to demonstrate that the new system was able to measure torques in the order of 10/sup -7/ Nm while the motor was in operation.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"216 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124261413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838491
E. Meng, Xuan-Qi Wang, H. Mak, Y. Tai
Two generations of check-valved silicone rubber diaphragm pumps are presented. Significant improvements have been made from pump to pump including the design and fabrication of a double-sided check valve, a bossed silicone membrane, and silicone gaskets. Water flow rates of up to 13 ml/min and a maximum back pressure of 5.9 kPa were achieved through pneumatic operation with an external compressed air source. Using a custom designed solenoid actuator, flow rates of up to 4.5 ml/min and a maximum back pressure of 2.1 kPa have been demonstrated.
{"title":"A check-valved silicone diaphragm pump","authors":"E. Meng, Xuan-Qi Wang, H. Mak, Y. Tai","doi":"10.1109/MEMSYS.2000.838491","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838491","url":null,"abstract":"Two generations of check-valved silicone rubber diaphragm pumps are presented. Significant improvements have been made from pump to pump including the design and fabrication of a double-sided check valve, a bossed silicone membrane, and silicone gaskets. Water flow rates of up to 13 ml/min and a maximum back pressure of 5.9 kPa were achieved through pneumatic operation with an external compressed air source. Using a custom designed solenoid actuator, flow rates of up to 4.5 ml/min and a maximum back pressure of 2.1 kPa have been demonstrated.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124360719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838525
Duck‐Jung Lee, B. Ju, Yun‐Hi Lee, Jin Jang, M. Oh
In this work, we have developed a new high vacuum packaging method using a glass-to-glass bonding for the application to microelectronic devices such as field emission display (FED). The glass-to-glass anodic bonding was established and optimized using introducing thin amorphous silicon (a-Si) interlayer. Also, we propose that the amount of oxygen ions is one of the important factors during the bonding process, as confirmed from the SIMS and XPS analyses for the reaction region of Si-O bond in interface. Our method was very effective to reduce the bonding temperature and make the high vacuum package of microelectronic devices over 10/sup -4/ Torr. Finally, to evaluate the vacuum sealing capability of a FED panel packaged by the method, the leak characteristics of the vacuum was examined by spinning rotor gauge (SRG) during 6 months and the electron emission properties of the panel were measured continuously for time variation during 26 days.
{"title":"Glass- to-glass anodic bonding for high vacuum packaging of microelectronics and its stability","authors":"Duck‐Jung Lee, B. Ju, Yun‐Hi Lee, Jin Jang, M. Oh","doi":"10.1109/MEMSYS.2000.838525","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838525","url":null,"abstract":"In this work, we have developed a new high vacuum packaging method using a glass-to-glass bonding for the application to microelectronic devices such as field emission display (FED). The glass-to-glass anodic bonding was established and optimized using introducing thin amorphous silicon (a-Si) interlayer. Also, we propose that the amount of oxygen ions is one of the important factors during the bonding process, as confirmed from the SIMS and XPS analyses for the reaction region of Si-O bond in interface. Our method was very effective to reduce the bonding temperature and make the high vacuum package of microelectronic devices over 10/sup -4/ Torr. Finally, to evaluate the vacuum sealing capability of a FED panel packaged by the method, the leak characteristics of the vacuum was examined by spinning rotor gauge (SRG) during 6 months and the electron emission properties of the panel were measured continuously for time variation during 26 days.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114324009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838593
J.Y. Park, G. Kim, K. Chung, J. Bu
RF microswitches are newly designed and fabricated with various structural geometry of transmission line, hinge, and movable plate formed by using electroplating techniques, low temperature processes, and dry releasing techniques. In particular, Strontium Titanate Oxide (SrTiO/sub 3/) with high dielectric constant is investigated for high switching on/off ratio and on capacitance as a dielectric layer of a micromechanical capacitive switch. Achieved lowest actuation voltage of the fabricated switches is 8 volts. The fabricated switch has low insertion loss of 0.08 dB at 10 GHz, isolation of 42 dB at 5 GHz, on/off ratio of 600, and on capacitance of 50 pF, respectively. These switches also have high current carry capability due to the use of electroplated Au or Cux.
{"title":"Electroplated rf MEMS capacitive switches","authors":"J.Y. Park, G. Kim, K. Chung, J. Bu","doi":"10.1109/MEMSYS.2000.838593","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838593","url":null,"abstract":"RF microswitches are newly designed and fabricated with various structural geometry of transmission line, hinge, and movable plate formed by using electroplating techniques, low temperature processes, and dry releasing techniques. In particular, Strontium Titanate Oxide (SrTiO/sub 3/) with high dielectric constant is investigated for high switching on/off ratio and on capacitance as a dielectric layer of a micromechanical capacitive switch. Achieved lowest actuation voltage of the fabricated switches is 8 volts. The fabricated switch has low insertion loss of 0.08 dB at 10 GHz, isolation of 42 dB at 5 GHz, on/off ratio of 600, and on capacitance of 50 pF, respectively. These switches also have high current carry capability due to the use of electroplated Au or Cux.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115664538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838616
S. Sugimoto, S. Tanaka, Jingfeng Li, R. Watanabe, M. Esashi
This paper describes a novel process, "Silicon Carbide Micro-reaction-sintering", to fabricate high-aspect-ratio silicon carbide microstructures. This process consists of micromachining of silicon molds, filling of material powders ( a-silicon carbide, graphite, silicon and phenol resin) into the molds, bonding of the molds with adhesive and reaction-sintering by hot isostatic pressing (HIP). Using our process, we have successfully fabricated silicon carbide microrotors of 5 and 10 mm diameters for micromachined gas turbines. We observed the cross section of the microrotors with a scanning electron microscope (SEM). The SEM observation demonstrated that the material powder was densely reaction-sintered by HIP. We also investigated the compositions of the microrotors by X-ray diffraction (XRD) analysis. The XRD analyses proved that graphite in the material powder reacted with melted silicon derived from the mold, and consequently /spl beta/-silicon carbide was produced around the /spl alpha/-silicon carbide originally included in the material powder.
{"title":"Silicon carbide micro-reaction-sintering using a multilayer silicon mold","authors":"S. Sugimoto, S. Tanaka, Jingfeng Li, R. Watanabe, M. Esashi","doi":"10.1109/MEMSYS.2000.838616","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838616","url":null,"abstract":"This paper describes a novel process, \"Silicon Carbide Micro-reaction-sintering\", to fabricate high-aspect-ratio silicon carbide microstructures. This process consists of micromachining of silicon molds, filling of material powders ( a-silicon carbide, graphite, silicon and phenol resin) into the molds, bonding of the molds with adhesive and reaction-sintering by hot isostatic pressing (HIP). Using our process, we have successfully fabricated silicon carbide microrotors of 5 and 10 mm diameters for micromachined gas turbines. We observed the cross section of the microrotors with a scanning electron microscope (SEM). The SEM observation demonstrated that the material powder was densely reaction-sintered by HIP. We also investigated the compositions of the microrotors by X-ray diffraction (XRD) analysis. The XRD analyses proved that graphite in the material powder reacted with melted silicon derived from the mold, and consequently /spl beta/-silicon carbide was produced around the /spl alpha/-silicon carbide originally included in the material powder.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116365593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838537
P. Griss, P. Enoksson, H. Tolvanen-Laakso, P. Merilainen, S. Ollmar, G. Stemme
We describe the microfabrication, packaging and testing of a dry biopotential electrode (i.e. electrolytic gel is not required), The electrode consists of an array of micro-dimensioned, very sharp spikes (i.e. needles) designed for penetration of human skin which circumvents high impedance problems associated with layers of the outer skin. Deep reactive ion etching (DRIE) technology was used to fabricate the spikes. The main advantages of these electrodes include a fast and uncomplicated application procedure, low electrode-skin-electrode impedance (lower than standard electrodes), and comfortable use. The spiked electrode offers a promising alternative to standard electrodes in biomedical applications (i.e. monitoring EEG signals) and is of interest in research of new biomedical methods.
我们描述了干生物电位电极(即不需要电解凝胶)的微制造，包装和测试。该电极由一系列微尺寸，非常锋利的尖峰(即针)组成，设计用于穿透人体皮肤，绕过与外皮层相关的高阻抗问题。采用深度反应离子刻蚀(Deep reactive ion etching, DRIE)技术制备了尖峰。这些电极的主要优点包括快速和简单的应用程序，低电极-皮肤电极阻抗(低于标准电极)和舒适的使用。尖刺电极在生物医学应用(即监测脑电图信号)中为标准电极提供了一种有希望的替代方案，并且是研究新的生物医学方法的兴趣。
{"title":"Spiked biopotential electrodes","authors":"P. Griss, P. Enoksson, H. Tolvanen-Laakso, P. Merilainen, S. Ollmar, G. Stemme","doi":"10.1109/MEMSYS.2000.838537","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838537","url":null,"abstract":"We describe the microfabrication, packaging and testing of a dry biopotential electrode (i.e. electrolytic gel is not required), The electrode consists of an array of micro-dimensioned, very sharp spikes (i.e. needles) designed for penetration of human skin which circumvents high impedance problems associated with layers of the outer skin. Deep reactive ion etching (DRIE) technology was used to fabricate the spikes. The main advantages of these electrodes include a fast and uncomplicated application procedure, low electrode-skin-electrode impedance (lower than standard electrodes), and comfortable use. The spiked electrode offers a promising alternative to standard electrodes in biomedical applications (i.e. monitoring EEG signals) and is of interest in research of new biomedical methods.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121989536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838603
A. Tixier, Y. Mita, S. Oshima, Jiang Guoy, H. Fujita
This paper reports the realization of a pigtailed silicon platform with 8 WDM filters based on a new 3-D packaging technology. Four silicon pieces are released out of a silicon wafer by using ICP-RIE as a very accurate dicing tool. One edge of the piece containing the filters is patterned into pin-shapes to be vertically inserted into a mother board with electrical connections. A V-groove board for the optical fibers is mechanically aligned in the mother board. This technology enables precise assembly of active optical devices with ribbon fibers, electrical connections to 3-D micromechanical subsystems and reconfiguring the system in the module level.
{"title":"3-D microsystem packaging for interconnecting electrical, optical and mechanical microdevices to the external world","authors":"A. Tixier, Y. Mita, S. Oshima, Jiang Guoy, H. Fujita","doi":"10.1109/MEMSYS.2000.838603","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838603","url":null,"abstract":"This paper reports the realization of a pigtailed silicon platform with 8 WDM filters based on a new 3-D packaging technology. Four silicon pieces are released out of a silicon wafer by using ICP-RIE as a very accurate dicing tool. One edge of the piece containing the filters is patterned into pin-shapes to be vertically inserted into a mother board with electrical connections. A V-groove board for the optical fibers is mechanically aligned in the mother board. This technology enables precise assembly of active optical devices with ribbon fibers, electrical connections to 3-D micromechanical subsystems and reconfiguring the system in the module level.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125753862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：