Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492308
D. Nohavica, P. Gladkov, M. Lourenço, Z. Yang, K. Homewood, D. Ehrentraut
The meander type technique of liquid phase epitaxy (LPE) is used for preparation of quaternary solid solution in GaInAsP/InP material system. Surface morphology of the layers prepared by meander type LPE has been compared with ones prepared by conventional LPE. Quaternary strained layers with composition near to Ga/sub .21/In/sub .79/As/sub .75/P/sub .25/ were grown with perpendicular lattice mismatch up to 1.6% in compression, on the InP substrates of (100) orientation. The used epitaxial technique has been modified for perspective attempt to heal the growth interfaces. Modification was tested by InP growth.
{"title":"Meander type LPE-new approach to growth InP and GaInAsP layers","authors":"D. Nohavica, P. Gladkov, M. Lourenço, Z. Yang, K. Homewood, D. Ehrentraut","doi":"10.1109/ICIPRM.1996.492308","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492308","url":null,"abstract":"The meander type technique of liquid phase epitaxy (LPE) is used for preparation of quaternary solid solution in GaInAsP/InP material system. Surface morphology of the layers prepared by meander type LPE has been compared with ones prepared by conventional LPE. Quaternary strained layers with composition near to Ga/sub .21/In/sub .79/As/sub .75/P/sub .25/ were grown with perpendicular lattice mismatch up to 1.6% in compression, on the InP substrates of (100) orientation. The used epitaxial technique has been modified for perspective attempt to heal the growth interfaces. Modification was tested by InP growth.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"11 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131373871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492026
W. Schlaak, W. Passenberg, C. Schramm, G. Mekonnen, A. Umbach, W. Ebert, H. Bach
For optical networks in the 40 Gbit/s regime as well as in fiber-fed cellular microwave mobile communication systems high-speed optical receivers with high sensitivity are required. This work describes the development of GaInAs-AlInAs high-electron mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE) on metal-organic vapour phase epitaxy (MOVPE) layers. These devices are to be used in low-noise amplifier circuits as part of an optical receiver.
{"title":"GaInAs/AlInAs-HEMTs grown on optical waveguide layers for photonic integrated circuits","authors":"W. Schlaak, W. Passenberg, C. Schramm, G. Mekonnen, A. Umbach, W. Ebert, H. Bach","doi":"10.1109/ICIPRM.1996.492026","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492026","url":null,"abstract":"For optical networks in the 40 Gbit/s regime as well as in fiber-fed cellular microwave mobile communication systems high-speed optical receivers with high sensitivity are required. This work describes the development of GaInAs-AlInAs high-electron mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE) on metal-organic vapour phase epitaxy (MOVPE) layers. These devices are to be used in low-noise amplifier circuits as part of an optical receiver.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132538201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492280
P. Klipstein, M. Lakrimi, S. Lyapin, N. Mason, R. Nicholas, P. Walker
There are a number of important considerations in common in the growth of InP/InGaAs and InAs/GaSb superlattices. These include: the uniformity of the periodicity within the superlattice, the type of interfaces and their arrangement within the superlattice and the abruptness of those interfaces. InAs/GaSb superlattices are a small sub-set of antimonide based semiconductors which are of interest to those studying solid state physics and designing devices with infrared applications. This paper will highlight the growth, by MOVPE, of some InAs/GaSb superlattices, and compare this with published results from the growth of InGaAs/InP superlattices, particularly with respect to the issues mentioned above.
{"title":"Growth and application of group III-antimonides by MOVPE","authors":"P. Klipstein, M. Lakrimi, S. Lyapin, N. Mason, R. Nicholas, P. Walker","doi":"10.1109/ICIPRM.1996.492280","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492280","url":null,"abstract":"There are a number of important considerations in common in the growth of InP/InGaAs and InAs/GaSb superlattices. These include: the uniformity of the periodicity within the superlattice, the type of interfaces and their arrangement within the superlattice and the abruptness of those interfaces. InAs/GaSb superlattices are a small sub-set of antimonide based semiconductors which are of interest to those studying solid state physics and designing devices with infrared applications. This paper will highlight the growth, by MOVPE, of some InAs/GaSb superlattices, and compare this with published results from the growth of InGaAs/InP superlattices, particularly with respect to the issues mentioned above.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134219372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492310
H. Hillmer, R. Losch, W. Schlapp, F. Steinhagen, H. Burkhard
Strain compensated QW samples with compressively strained wells and tensile strained barriers have been grown by MBE and studied by low temperature photoluminescence. The PL linewidths are narrow, decrease with growing well widths, and increase only weakly with rising number of wells.
{"title":"Strain-compensated MBE grown AlGaInAs/AlGaInAs/InP QWs for photonic devices","authors":"H. Hillmer, R. Losch, W. Schlapp, F. Steinhagen, H. Burkhard","doi":"10.1109/ICIPRM.1996.492310","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492310","url":null,"abstract":"Strain compensated QW samples with compressively strained wells and tensile strained barriers have been grown by MBE and studied by low temperature photoluminescence. The PL linewidths are narrow, decrease with growing well widths, and increase only weakly with rising number of wells.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134543507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492260
H. Duran, B. Klepser, W. Patrick, M. Schefer, R. Cheung, W. Bachtold
Lattice-matched InAlAs/InGaAs HEMTs with selectively dry etched and wet etched gate recesses have been fabricated and both high-frequency and noise measurements have been carried out. The modelling of the noise source parameters shows only minor difference between the two transistor types. There is no evidence of detrimental effects caused by dry etching that reduce the noise performance of the device at high frequencies. To our knowledge, this is the first report of low-noise performance for dry etched InP HEMTs.
{"title":"Low noise performance of dry etched InGaAs/InAlAs HEMTs in comparison with wet recessed devices","authors":"H. Duran, B. Klepser, W. Patrick, M. Schefer, R. Cheung, W. Bachtold","doi":"10.1109/ICIPRM.1996.492260","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492260","url":null,"abstract":"Lattice-matched InAlAs/InGaAs HEMTs with selectively dry etched and wet etched gate recesses have been fabricated and both high-frequency and noise measurements have been carried out. The modelling of the noise source parameters shows only minor difference between the two transistor types. There is no evidence of detrimental effects caused by dry etching that reduce the noise performance of the device at high frequencies. To our knowledge, this is the first report of low-noise performance for dry etched InP HEMTs.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130869248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492031
S. Messenger, H. Cotal, R. Walters, G. Summers
As part of a continuing program to determine the space radiation resistance of InP/In/sub 0.53/Ga/sub 0.47/As tandem solar cells on Ge substrates, n/p In/sub 0.53/Ga/sub 0.47/As solar cells fabricated by Research Triangle Institute (RTI) were irradiated with protons of various energy. The cells were grown with a 3 /spl mu/m n-InP window layer to mimic the top cell in the tandem cell configuration for both 1 sun, AMO solar absorption and radiation effects. The results have been plotted against proton fluence and "displacement damage dose" which is the product of the nonionizing energy loss (NIEL) and the particle fluence. A characteristic radiation damage curve is then obtained for predicting the effect of irradiation by any particle of any energy on these cells.
{"title":"Proton damage on InGaAs solar cells having a 3 /spl mu/m InP window layer","authors":"S. Messenger, H. Cotal, R. Walters, G. Summers","doi":"10.1109/ICIPRM.1996.492031","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492031","url":null,"abstract":"As part of a continuing program to determine the space radiation resistance of InP/In/sub 0.53/Ga/sub 0.47/As tandem solar cells on Ge substrates, n/p In/sub 0.53/Ga/sub 0.47/As solar cells fabricated by Research Triangle Institute (RTI) were irradiated with protons of various energy. The cells were grown with a 3 /spl mu/m n-InP window layer to mimic the top cell in the tandem cell configuration for both 1 sun, AMO solar absorption and radiation effects. The results have been plotted against proton fluence and \"displacement damage dose\" which is the product of the nonionizing energy loss (NIEL) and the particle fluence. A characteristic radiation damage curve is then obtained for predicting the effect of irradiation by any particle of any energy on these cells.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131442718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492037
S. Marcinkevičius, A. Krotkus, R. Leon, C. Jagadish, N. Welham, M. Gal
The effects of metallic precipitation in undoped InP on its lifetime and luminescence have been studied in samples with a gradually increasing concentration of metallic precipitates. It was found that the nonequilibrium carrier decay in this material occurs on picosecond time scale and is of a qualitatively different shape than in materials where deep level traps act as the main recombination centres.
{"title":"Picosecond lifetimes and exciton quenching induced by metallic precipitation in InP:Cu","authors":"S. Marcinkevičius, A. Krotkus, R. Leon, C. Jagadish, N. Welham, M. Gal","doi":"10.1109/ICIPRM.1996.492037","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492037","url":null,"abstract":"The effects of metallic precipitation in undoped InP on its lifetime and luminescence have been studied in samples with a gradually increasing concentration of metallic precipitates. It was found that the nonequilibrium carrier decay in this material occurs on picosecond time scale and is of a qualitatively different shape than in materials where deep level traps act as the main recombination centres.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115595358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492047
A. V. Kamanin, I. Mokina, N. Shmidt, L. A. Busygina, T. A. Yurre
A Zn diffusion technique into III-V compounds from polymer spin-on films has been devised that allows to retain the initial surface morphology without any additional operations. This essentially simplifies the process. Moreover, the method provides a high portion (about 100%) of the electrically active Zn at N/sub Zn/
{"title":"Polymer diffusants in III-V semiconductor compounds technology","authors":"A. V. Kamanin, I. Mokina, N. Shmidt, L. A. Busygina, T. A. Yurre","doi":"10.1109/ICIPRM.1996.492047","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492047","url":null,"abstract":"A Zn diffusion technique into III-V compounds from polymer spin-on films has been devised that allows to retain the initial surface morphology without any additional operations. This essentially simplifies the process. Moreover, the method provides a high portion (about 100%) of the electrically active Zn at N/sub Zn/<L(Zn). The technique shows promise for applying in the technology of III-V compound devices. The possibilities for the local diffusion through the windows of the SiO/sub 2/ mask with retention of dielectric properties of the mask is pointed out. During the Zn diffusion into Al/sub x/Ga/sub 1-x/As gettering of the Al atoms was observed that allowed to obtain the high Zn atoms concentration at their near-total activation. This process resulted in homogenization of the near-surface regions.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114677964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.491939
M. Toivonen, A. Salokatve, K. Tappura, M. Jalonen, P. Savolainen, J. Nappi, M. Pessa, H. Asonen
Phosphorus-based materials are of great importance for many advanced optoelectronic and electronic devices. The most common techniques used for growing phosphorus containing epitaxial structures are MOCVD, GSMBE and CBE. All these growth methods use highly toxic hydrides as group-V sources. As environmental regulations, safety precautions and cost effectiveness are important issues in compound semiconductor business, there is an urge for a simpler and cheaper growth technique. Molecular beam epitaxy using solid sources for both phosphorus and arsenic (SSMBE) would be the simplest choice. However, the problematic physical properties of phosphorus have hampered the use of SSMBE until recently. The new valved cracker technology has overcome the problems associated with the use of solid phosphorus and SSMBE has matured to the level that state-of-the-art phosphorus-based materials and devices can be produced. In this paper, we review some of our results for SSMBE grown phosphide-based devices. These include strained-layer InGaAsP/InP SCH-MQW and strain-compensated InAsP/InGaP/InP MQW lasers emitting at 1.3 /spl mu/m, strained-layer InGaAs/InGaAsP/GaInP QW lasers for 980 nm and 905 nm, 680 nm strained-layer GaInP/AlGaInP QW lasers, and InGaAs/InP HBTs.
{"title":"Solid source MBE for phosphide-based devices","authors":"M. Toivonen, A. Salokatve, K. Tappura, M. Jalonen, P. Savolainen, J. Nappi, M. Pessa, H. Asonen","doi":"10.1109/ICIPRM.1996.491939","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491939","url":null,"abstract":"Phosphorus-based materials are of great importance for many advanced optoelectronic and electronic devices. The most common techniques used for growing phosphorus containing epitaxial structures are MOCVD, GSMBE and CBE. All these growth methods use highly toxic hydrides as group-V sources. As environmental regulations, safety precautions and cost effectiveness are important issues in compound semiconductor business, there is an urge for a simpler and cheaper growth technique. Molecular beam epitaxy using solid sources for both phosphorus and arsenic (SSMBE) would be the simplest choice. However, the problematic physical properties of phosphorus have hampered the use of SSMBE until recently. The new valved cracker technology has overcome the problems associated with the use of solid phosphorus and SSMBE has matured to the level that state-of-the-art phosphorus-based materials and devices can be produced. In this paper, we review some of our results for SSMBE grown phosphide-based devices. These include strained-layer InGaAsP/InP SCH-MQW and strain-compensated InAsP/InGaP/InP MQW lasers emitting at 1.3 /spl mu/m, strained-layer InGaAs/InGaAsP/GaInP QW lasers for 980 nm and 905 nm, 680 nm strained-layer GaInP/AlGaInP QW lasers, and InGaAs/InP HBTs.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114700303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492023
B. Opitz, A. Kohl, A. Behres, K. Mertens, K. Heime, H. Schmitt
We observed the Wannier-Stark effect in MOVPE-grown strain balanced Ga/sub x/In/sub 1-x/As/sub z/P/sub 1-z//Ga/sub y/In/sub 1-y/As/sub z/P/sub 1-z/ superlattices with constant As-content. The observed transitions could be well described by a simple theoretical model. By careful design of the shallow superlattice, the advantages of its weak carrier confinement can be combined with operation at room temperature. First measurements in waveguide configuration yield an electroabsorptive modulation ratio of 42 dB/(Vmm), which is comparable with current CBE-grown GaInAs/InP superlattice data.
在恒定As含量的movpe应变平衡Ga/sub x/ in /sub 1-x/As/sub z/P/sub 1-z//Ga/sub y/ in /sub 1-y/As/sub z/P/sub 1-z/超晶格中观察到Wannier-Stark效应。观测到的跃迁可以用一个简单的理论模型很好地描述。通过对浅超晶格的精心设计，可以将其弱载流子约束的优点与室温下的操作相结合。在波导结构中进行的首次测量产生了42 dB/(Vmm)的电吸收调制比，这与当前cbe生长的GaInAs/InP超晶格数据相当。
{"title":"Wannier-Stark effect in Ga/sub x/In/sub 1-x/As/sub z/P/sub 1-z//Ga/sub y/In/sub 1-y/As/sub z/P/sub 1-z/ superlattices on InP","authors":"B. Opitz, A. Kohl, A. Behres, K. Mertens, K. Heime, H. Schmitt","doi":"10.1109/ICIPRM.1996.492023","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492023","url":null,"abstract":"We observed the Wannier-Stark effect in MOVPE-grown strain balanced Ga/sub x/In/sub 1-x/As/sub z/P/sub 1-z//Ga/sub y/In/sub 1-y/As/sub z/P/sub 1-z/ superlattices with constant As-content. The observed transitions could be well described by a simple theoretical model. By careful design of the shallow superlattice, the advantages of its weak carrier confinement can be combined with operation at room temperature. First measurements in waveguide configuration yield an electroabsorptive modulation ratio of 42 dB/(Vmm), which is comparable with current CBE-grown GaInAs/InP superlattice data.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117040344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：