Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492255
J. B. Boos, W. Kruppa, Doe Park, B. Molnar, R. Bass, M. Goldenberg, B. R. Bennett, J. Mittereder
We report on the fabrication and characteristics of Pd/Pt/Au and AuGe/Ni/Pt/Au ohmic contact metalizations for AlSb/InAs HEMTs. For the AuGe/Ni/Pt/Au contact, a contact resistance of 0.11 /spl Omega/-mm was achieved using a 300/spl deg/C rapid thermal anneal. Auger depth profiling revealed considerable Au in-diffusion. Using this contact, 0.2 /spl mu/m gate-length AlSb/InAs HEMTs were fabricated which exhibit a low-field source-drain resistance of 0.61 /spl Omega/-mm and a transconductance of 1.3 S/mm. For the Pd/Pt/Au contact, a contact resistance of 0.08 /spl Omega/-mm was achieved using a 175/spl deg/C hot plate heat treatment. Auger depth profiling revealed that the diffusion of the Pd/Pt/Au contact is significantly less than that of the AuGe/Ni/Pt/Au contact. Using the Pd/Pt/Au contact, 0.5 /spl mu/m gate-length AlSb/InAs HEMTs were fabricated which exhibit a low-field source-drain resistance of 0.47 /spl Omega/-mm.
{"title":"Pd/Pt/Au and AuGe/Ni/Pt/Au ohmic contacts for AlSb/InAs HEMTs","authors":"J. B. Boos, W. Kruppa, Doe Park, B. Molnar, R. Bass, M. Goldenberg, B. R. Bennett, J. Mittereder","doi":"10.1109/ICIPRM.1996.492255","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492255","url":null,"abstract":"We report on the fabrication and characteristics of Pd/Pt/Au and AuGe/Ni/Pt/Au ohmic contact metalizations for AlSb/InAs HEMTs. For the AuGe/Ni/Pt/Au contact, a contact resistance of 0.11 /spl Omega/-mm was achieved using a 300/spl deg/C rapid thermal anneal. Auger depth profiling revealed considerable Au in-diffusion. Using this contact, 0.2 /spl mu/m gate-length AlSb/InAs HEMTs were fabricated which exhibit a low-field source-drain resistance of 0.61 /spl Omega/-mm and a transconductance of 1.3 S/mm. For the Pd/Pt/Au contact, a contact resistance of 0.08 /spl Omega/-mm was achieved using a 175/spl deg/C hot plate heat treatment. Auger depth profiling revealed that the diffusion of the Pd/Pt/Au contact is significantly less than that of the AuGe/Ni/Pt/Au contact. Using the Pd/Pt/Au contact, 0.5 /spl mu/m gate-length AlSb/InAs HEMTs were fabricated which exhibit a low-field source-drain resistance of 0.47 /spl Omega/-mm.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133660288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.491952
G. Haddad
Resonant tunneling heterojunction bipolar transistors (RTBT's) or RTD and HBT combinations are particularly suitable for very high speed/low-power digital circuits. Here we will present recent results on InP-based devices and their applications.
{"title":"Resonant tunneling heterojunction bipolar transistors and their applications in high functionality/speed digital circuits","authors":"G. Haddad","doi":"10.1109/ICIPRM.1996.491952","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491952","url":null,"abstract":"Resonant tunneling heterojunction bipolar transistors (RTBT's) or RTD and HBT combinations are particularly suitable for very high speed/low-power digital circuits. Here we will present recent results on InP-based devices and their applications.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130353957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492331
S. van Waasen, G. Janssen, R. Bertenburg, R. Reuter, F. Tegude
The applicability of the transimpedance amplifier for optoelectronic receivers becomes doubtful for bit rates higher than 20 Gb/s. So recently the traveling wave amplifier (TWA) concept for high bit rate receiver systems is of increasing interest because it is the preferred amplifier concept for broadband applications like hierarchically organized communication interlinks. TWAs usually are designed with an input and output impedance of 50 /spl Omega/. Thus a main problem of the TWA-concept for an optoelectronic receiver is matching the photo-detector (PD) and the TWA input and reach the requested input RC-bandwidth. The conventional approach is a TWA with an additional 50 /spl Omega/ match resistor at the input line, which has to be integrated directly into the PD itself in order to avoid parasitics. The aim of this paper is to present an alternative concept to the match resistor realized by a TWA with a low-impedance input (25 /spl Omega/), which yields significantly reduced design and fabrication efforts. All simulations for the investigated and optimized designs of the TWA in coplanar technique have been carried out using a commercially available software. For exact noise and sensitivity simulations, an extended temperature noise model (TNM) for heterostructure field-effect transistors was developed and implemented. Finally a comparison with measurement results of the realized TWA is presented.
{"title":"Development of a low-impedance traveling wave amplifier based on InAlAs/InGaAs/InP-HFET for 20 Gb/s optoelectronic receivers","authors":"S. van Waasen, G. Janssen, R. Bertenburg, R. Reuter, F. Tegude","doi":"10.1109/ICIPRM.1996.492331","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492331","url":null,"abstract":"The applicability of the transimpedance amplifier for optoelectronic receivers becomes doubtful for bit rates higher than 20 Gb/s. So recently the traveling wave amplifier (TWA) concept for high bit rate receiver systems is of increasing interest because it is the preferred amplifier concept for broadband applications like hierarchically organized communication interlinks. TWAs usually are designed with an input and output impedance of 50 /spl Omega/. Thus a main problem of the TWA-concept for an optoelectronic receiver is matching the photo-detector (PD) and the TWA input and reach the requested input RC-bandwidth. The conventional approach is a TWA with an additional 50 /spl Omega/ match resistor at the input line, which has to be integrated directly into the PD itself in order to avoid parasitics. The aim of this paper is to present an alternative concept to the match resistor realized by a TWA with a low-impedance input (25 /spl Omega/), which yields significantly reduced design and fabrication efforts. All simulations for the investigated and optimized designs of the TWA in coplanar technique have been carried out using a commercially available software. For exact noise and sensitivity simulations, an extended temperature noise model (TNM) for heterostructure field-effect transistors was developed and implemented. Finally a comparison with measurement results of the realized TWA is presented.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130382016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492039
A. Dadgar, M. Kuttler, M. Strassburg, R. Heitz, D. Bimberg, J. Hyeon, T. Grundemann, H. Schumann
We present a detailed investigation of the electrically active Rh concentration in low-pressure metalorganic chemical vapor-phase epitaxy grown InP:Rh in dependence of the growth parameters. Rh introduces two deep mid gap acceptor levels RhA and RhB in InP at E/sub v/+0.71 eV and E/sub v/+0.62 eV, respectively. Taking into account the low diffusivity of Rh in InP (D/sub rh/(800/spl deg/C)/spl les/1/spl times/10/sup 14/ cm/sup 2//s) Rh is an interesting candidate as compensating dopant for thermally stable semi-insulating InP. We show that the electrically active Rh concentration can be increased by a factor 5 using the inert carrier gas N/sub 2/ instead of H/sub 2/.
{"title":"10/sup 16/ cm/sup -3/ electrically active and thermally stable deep Rh acceptors in InP","authors":"A. Dadgar, M. Kuttler, M. Strassburg, R. Heitz, D. Bimberg, J. Hyeon, T. Grundemann, H. Schumann","doi":"10.1109/ICIPRM.1996.492039","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492039","url":null,"abstract":"We present a detailed investigation of the electrically active Rh concentration in low-pressure metalorganic chemical vapor-phase epitaxy grown InP:Rh in dependence of the growth parameters. Rh introduces two deep mid gap acceptor levels RhA and RhB in InP at E/sub v/+0.71 eV and E/sub v/+0.62 eV, respectively. Taking into account the low diffusivity of Rh in InP (D/sub rh/(800/spl deg/C)/spl les/1/spl times/10/sup 14/ cm/sup 2//s) Rh is an interesting candidate as compensating dopant for thermally stable semi-insulating InP. We show that the electrically active Rh concentration can be increased by a factor 5 using the inert carrier gas N/sub 2/ instead of H/sub 2/.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130972806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492019
S. Tanaka, K. Utaka, T. Yamamoto, M. Horita, Y. Matsusbima
We propose a novel wavelength filter using a grating-assisted vertical contra-directional coupler for an add and drop multiplexer (ADM). It is predicted from our calculations that the bandwidths of the filter can be narrow less than 1 nm and easily controllable by means of the optimization of the device parameters. We have successfully fabricated the InP-based semiconductor filter and also demonstrated filtering bandwidth as narrow as 0.7 nm which is consistent with our calculations.
{"title":"Proposal of new narrow-band wavelength filter using grating-assisted vertical contra-directional coupler","authors":"S. Tanaka, K. Utaka, T. Yamamoto, M. Horita, Y. Matsusbima","doi":"10.1109/ICIPRM.1996.492019","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492019","url":null,"abstract":"We propose a novel wavelength filter using a grating-assisted vertical contra-directional coupler for an add and drop multiplexer (ADM). It is predicted from our calculations that the bandwidths of the filter can be narrow less than 1 nm and easily controllable by means of the optimization of the device parameters. We have successfully fabricated the InP-based semiconductor filter and also demonstrated filtering bandwidth as narrow as 0.7 nm which is consistent with our calculations.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128285684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492261
M. Yamamoto, Y. Itaya, T. Sugie
A 1.3 /spl mu/m laser diode with a butt-jointed spotsize converter was successfully fabricated with a 2-inch full wafer process. Although the laser diodes are integrated with the spot-size converter, a threshold current of less than 5.6 mA and slope efficiency as large as 0.41 W/A at 25 C were obtained. These results demonstrate that the newly developed SSC-LD is promising as a light source for a low cost optical module for access networks.
{"title":"1.3-/spl mu/m laser diodes with spot-size converter for access networks","authors":"M. Yamamoto, Y. Itaya, T. Sugie","doi":"10.1109/ICIPRM.1996.492261","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492261","url":null,"abstract":"A 1.3 /spl mu/m laser diode with a butt-jointed spotsize converter was successfully fabricated with a 2-inch full wafer process. Although the laser diodes are integrated with the spot-size converter, a threshold current of less than 5.6 mA and slope efficiency as large as 0.41 W/A at 25 C were obtained. These results demonstrate that the newly developed SSC-LD is promising as a light source for a low cost optical module for access networks.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132231784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492383
C. Berthelemot, P. Vigier, J. Dumas, A. Clei, R. Palla, J. Harmand
The InAlAs/lnGaAs HEMT is a key electron device used in optoelectronic integrated circuits (OEICs) operating in the 1.3 and 1.5 /spl mu/m optical wavelength ranges. But OEIC performances can be degraded by side gating effects associated with the HEMT. A side gate current is demonstrated to be due to a hole current induced by an impact ionization mechanism into the HEMT InGaAs channel and flowing through the InAlAs buffer layer.
{"title":"Dependence of sidegating effect in InAlAs/InGaAs HEMTs upon impact ionization","authors":"C. Berthelemot, P. Vigier, J. Dumas, A. Clei, R. Palla, J. Harmand","doi":"10.1109/ICIPRM.1996.492383","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492383","url":null,"abstract":"The InAlAs/lnGaAs HEMT is a key electron device used in optoelectronic integrated circuits (OEICs) operating in the 1.3 and 1.5 /spl mu/m optical wavelength ranges. But OEIC performances can be degraded by side gating effects associated with the HEMT. A side gate current is demonstrated to be due to a hole current induced by an impact ionization mechanism into the HEMT InGaAs channel and flowing through the InAlAs buffer layer.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134504958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.491971
A. Wohlmutt, P. Fay, C. Caneau, I. Adesida
Metal-semiconductor-metal photodetectors (MSMPDs) have been shown to be important components for integrated optoelectronic receivers due to their high speed performance, low signal-to-noise ratio, and integrability with field-effect transistor technology. Since the signal-to-noise ratio of photodetectors is inversely proportional to the dark current, it is important to devise techniques to reduce the dark current while maintaining high speed performance. In this paper, we have reduced the dark current and also suppressed breakdown effects in InAlAs-InGaAs MSMPDs by placing the contact pads and the tips of the electrodes on an insulating layer of silicon nitride.
{"title":"Low dark current InAlAs/InGaAs metal-semiconductor-metal photodetectors","authors":"A. Wohlmutt, P. Fay, C. Caneau, I. Adesida","doi":"10.1109/ICIPRM.1996.491971","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491971","url":null,"abstract":"Metal-semiconductor-metal photodetectors (MSMPDs) have been shown to be important components for integrated optoelectronic receivers due to their high speed performance, low signal-to-noise ratio, and integrability with field-effect transistor technology. Since the signal-to-noise ratio of photodetectors is inversely proportional to the dark current, it is important to devise techniques to reduce the dark current while maintaining high speed performance. In this paper, we have reduced the dark current and also suppressed breakdown effects in InAlAs-InGaAs MSMPDs by placing the contact pads and the tips of the electrodes on an insulating layer of silicon nitride.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"220 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127658006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.491922
H. Lakner
Heterostructures based on III-V semiconductors play a dominant role for the production of optoelectronic and electronic high-speed or high-frequency devices. The necessary band-gap engineering is achieved by optimized growth procedures which allow to change the chemical composition and the crystal structure (e.g. strain or ordering) on the subnanometer scale. The evaluation of individual heterointerfaces with respect to chemical composition and crystal structure requires characterization techniques which offer the necessary high spatial resolution. Scanning transmission electron microscopy (STEM) offers several such quantitative techniques. It is the intention of this paper to demonstrate the capabilities of STEM in the subnanometer characterization of III-V-heterostructures based on InP-substrates. Additionally, the data obtained from nanocharacterization can be correlated to device performance.
{"title":"Subnanometer scale characterization of III-V-heterostructures","authors":"H. Lakner","doi":"10.1109/ICIPRM.1996.491922","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491922","url":null,"abstract":"Heterostructures based on III-V semiconductors play a dominant role for the production of optoelectronic and electronic high-speed or high-frequency devices. The necessary band-gap engineering is achieved by optimized growth procedures which allow to change the chemical composition and the crystal structure (e.g. strain or ordering) on the subnanometer scale. The evaluation of individual heterointerfaces with respect to chemical composition and crystal structure requires characterization techniques which offer the necessary high spatial resolution. Scanning transmission electron microscopy (STEM) offers several such quantitative techniques. It is the intention of this paper to demonstrate the capabilities of STEM in the subnanometer characterization of III-V-heterostructures based on InP-substrates. Additionally, the data obtained from nanocharacterization can be correlated to device performance.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121294878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492290
M. D'Hondt, I. Moerman, P. Demeester
We describe the influence of growth temperature, buffer layer structure and substrate orientation on the dark current density of test devices. All growth runs were performed by means of low-pressure MOVPE, using a horizontal liner. The processing of these devices consisted of deposition of TiAu contacts, by using a removable Ni mask, with openings of different size and shape. These metal contacts were in turn used as a mask for the etching of the mesa.
{"title":"Dark current reduction for 2.5 /spl mu/m wavelength, 2% mismatched InGaAs photodetectors, by changing bufferlayer structure and growth temperature","authors":"M. D'Hondt, I. Moerman, P. Demeester","doi":"10.1109/ICIPRM.1996.492290","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492290","url":null,"abstract":"We describe the influence of growth temperature, buffer layer structure and substrate orientation on the dark current density of test devices. All growth runs were performed by means of low-pressure MOVPE, using a horizontal liner. The processing of these devices consisted of deposition of TiAu contacts, by using a removable Ni mask, with openings of different size and shape. These metal contacts were in turn used as a mask for the etching of the mesa.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128971186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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