Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492039
A. Dadgar, M. Kuttler, M. Strassburg, R. Heitz, D. Bimberg, J. Hyeon, T. Grundemann, H. Schumann
We present a detailed investigation of the electrically active Rh concentration in low-pressure metalorganic chemical vapor-phase epitaxy grown InP:Rh in dependence of the growth parameters. Rh introduces two deep mid gap acceptor levels RhA and RhB in InP at E/sub v/+0.71 eV and E/sub v/+0.62 eV, respectively. Taking into account the low diffusivity of Rh in InP (D/sub rh/(800/spl deg/C)/spl les/1/spl times/10/sup 14/ cm/sup 2//s) Rh is an interesting candidate as compensating dopant for thermally stable semi-insulating InP. We show that the electrically active Rh concentration can be increased by a factor 5 using the inert carrier gas N/sub 2/ instead of H/sub 2/.
{"title":"10/sup 16/ cm/sup -3/ electrically active and thermally stable deep Rh acceptors in InP","authors":"A. Dadgar, M. Kuttler, M. Strassburg, R. Heitz, D. Bimberg, J. Hyeon, T. Grundemann, H. Schumann","doi":"10.1109/ICIPRM.1996.492039","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492039","url":null,"abstract":"We present a detailed investigation of the electrically active Rh concentration in low-pressure metalorganic chemical vapor-phase epitaxy grown InP:Rh in dependence of the growth parameters. Rh introduces two deep mid gap acceptor levels RhA and RhB in InP at E/sub v/+0.71 eV and E/sub v/+0.62 eV, respectively. Taking into account the low diffusivity of Rh in InP (D/sub rh/(800/spl deg/C)/spl les/1/spl times/10/sup 14/ cm/sup 2//s) Rh is an interesting candidate as compensating dopant for thermally stable semi-insulating InP. We show that the electrically active Rh concentration can be increased by a factor 5 using the inert carrier gas N/sub 2/ instead of H/sub 2/.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130972806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.491961
D. Delprat, L. Silvestre, A. Ougazzaden, Franck Delorme, S. Slempkes, A. Ramdane
Wavelength tunable lasers are key devices for WDM optical communication systems. Several approaches have been used to realize these components such as butt-coupling, vertical coupling or Selective Area Growth (SAG). We used the latter owing to its simplicity for achieving, in only one epitaxial step, regions of different transition energy and high optical coupling factor. An optimized guide structure allowed us to reach a tuning range of 7 nm, which is to the best of our knowledge a record with this approach. The use of strained MQWs allows the active-passive wavelength detuning to be reduced down to about 80 nm which results in a quite stable output power (+1 dB) during tuning of the laser diode.
{"title":"Record tuning range of a 1.55 /spl mu/m DBR laser realized by selective area growth","authors":"D. Delprat, L. Silvestre, A. Ougazzaden, Franck Delorme, S. Slempkes, A. Ramdane","doi":"10.1109/ICIPRM.1996.491961","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491961","url":null,"abstract":"Wavelength tunable lasers are key devices for WDM optical communication systems. Several approaches have been used to realize these components such as butt-coupling, vertical coupling or Selective Area Growth (SAG). We used the latter owing to its simplicity for achieving, in only one epitaxial step, regions of different transition energy and high optical coupling factor. An optimized guide structure allowed us to reach a tuning range of 7 nm, which is to the best of our knowledge a record with this approach. The use of strained MQWs allows the active-passive wavelength detuning to be reduced down to about 80 nm which results in a quite stable output power (+1 dB) during tuning of the laser diode.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128248280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.491930
D. Zemke, H. Leister, G. Muller
The potential of the VGF process is analysed by using a flat bottom crucible for the growth of InP crystals with 2" diameter. Results of numerical simulations are used to design a set-up which can be run in a LEC facility. The EPD /spl ap/3/spl middot/10/sup 3/ cm/sup -2/ of the grown crystals is in accordance with calculated results based on an analysis of the thermal stress occurring during growth.
{"title":"Growth of InP bulk crystals by VGF: a comparative study of dislocation density and numerical stress analysis","authors":"D. Zemke, H. Leister, G. Muller","doi":"10.1109/ICIPRM.1996.491930","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491930","url":null,"abstract":"The potential of the VGF process is analysed by using a flat bottom crucible for the growth of InP crystals with 2\" diameter. Results of numerical simulations are used to design a set-up which can be run in a LEC facility. The EPD /spl ap/3/spl middot/10/sup 3/ cm/sup -2/ of the grown crystals is in accordance with calculated results based on an analysis of the thermal stress occurring during growth.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"93 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125535405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492301
Jin-Shung Liu, Tsuen-Lin Lee, Hao-Hsiung Lin
A GaInAsP GSMBE growth model considering an intermediate state is presented. This model is very simple and needs only two fitting parameters, k/sub In/ and k/sub Ga/, which are determined from the experimental results of In/sub 1-x/Ga/sub x/As/sub y/P/sub 1-y/ on InP (0
{"title":"An unified GSMBE growth model for GaInAsP on InP and GaAs","authors":"Jin-Shung Liu, Tsuen-Lin Lee, Hao-Hsiung Lin","doi":"10.1109/ICIPRM.1996.492301","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492301","url":null,"abstract":"A GaInAsP GSMBE growth model considering an intermediate state is presented. This model is very simple and needs only two fitting parameters, k/sub In/ and k/sub Ga/, which are determined from the experimental results of In/sub 1-x/Ga/sub x/As/sub y/P/sub 1-y/ on InP (0<x<0.47 and 0<y<1) and In/sub 1-x/Ga/sub x/As/sub y/P/sub 1-y/ on GaAs (0.51<x<1 and 0<y<1). At a growth temperature of 480/spl deg/C, they are 27.5 and 2.75, respectively. Their temperature dependency, i.e., activation energies are -27.5 and -457 meV, respectively. The average lattice mismatch difference between the theoretical and experimental results of grown epilayers is less than 7/spl times/10/sup -4/.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"68 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114024061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492291
V. Souliere, V. Thevenot, H. Dumont, Y. Monteil, J. Bouix, P. Regreny, T. Duc
Our objective is the investigation of MOVPE growth mechanisms for InP. We focused on the surface topography observed by Atomic Force Microscopy (AFM). It is known that growth conditions such as thermal annealing, growth temperature or V/III ratio have a strong influence on growth mechanisms and surface topography. We present recent results on growth mechanisms on vicinal and highly misoriented InP surfaces studied by AFM.
{"title":"AFM study of surface topography of InP epilayers: effect of miscut angle and growth temperature during MOVPE","authors":"V. Souliere, V. Thevenot, H. Dumont, Y. Monteil, J. Bouix, P. Regreny, T. Duc","doi":"10.1109/ICIPRM.1996.492291","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492291","url":null,"abstract":"Our objective is the investigation of MOVPE growth mechanisms for InP. We focused on the surface topography observed by Atomic Force Microscopy (AFM). It is known that growth conditions such as thermal annealing, growth temperature or V/III ratio have a strong influence on growth mechanisms and surface topography. We present recent results on growth mechanisms on vicinal and highly misoriented InP surfaces studied by AFM.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"11 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120814656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492382
A. Gautier-Levine, P. Audren, G. Post, M. Favennec, J. Dumas
The drain lag effect is a low frequency parasitic response of field effect transistors on III-V semiconductors. HFET devices were fabricated with InP semiconductor and quaternary lattice-matched compound channels, respectively. From the study of the drain lag value of these two types of devices, the importance of proper technological processes is emphasized.
{"title":"A study of trap related drain lag effects in InP HFETs","authors":"A. Gautier-Levine, P. Audren, G. Post, M. Favennec, J. Dumas","doi":"10.1109/ICIPRM.1996.492382","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492382","url":null,"abstract":"The drain lag effect is a low frequency parasitic response of field effect transistors on III-V semiconductors. HFET devices were fabricated with InP semiconductor and quaternary lattice-matched compound channels, respectively. From the study of the drain lag value of these two types of devices, the importance of proper technological processes is emphasized.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120947852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492046
H. Fourre, O. Schuler, J. Pesant, A. Leroy, A. Cappy
We have investigated implant isolation for lattice matched InGaAs/InAlAs/InP Modulation Doped Field Effect Transistors (MODFETs). The sheet resistances of the MODFET layers were measured after implantation of different ions species (H/sup +/, B/sup +/, F/sup +/ and Ar/sup +/), for different ion doses (10/sup 12/-10/sup 15/ cm/sup -2/) and after post implant annealing (100/spl deg/C-400/spl deg/C) for different annealing time (10 min-24 h). The best measured sheet resistance was about 30 M/spl Omega///spl square/ using Ar/sup +/ implantation with a dose of 1.10/sup 15/ cm/sup -2/ and 10 hours annealing at 300/spl deg/C. This is the best implant isolation result obtained for InP lattice matched MODFET layer to our knowledge. This result allows us to realise planar InP lattice matched MODFET with a good isolation.
{"title":"Implant isolation for lattice matched InGaAs/InAlAs/InP modulation doped field effect transistor realisation","authors":"H. Fourre, O. Schuler, J. Pesant, A. Leroy, A. Cappy","doi":"10.1109/ICIPRM.1996.492046","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492046","url":null,"abstract":"We have investigated implant isolation for lattice matched InGaAs/InAlAs/InP Modulation Doped Field Effect Transistors (MODFETs). The sheet resistances of the MODFET layers were measured after implantation of different ions species (H/sup +/, B/sup +/, F/sup +/ and Ar/sup +/), for different ion doses (10/sup 12/-10/sup 15/ cm/sup -2/) and after post implant annealing (100/spl deg/C-400/spl deg/C) for different annealing time (10 min-24 h). The best measured sheet resistance was about 30 M/spl Omega///spl square/ using Ar/sup +/ implantation with a dose of 1.10/sup 15/ cm/sup -2/ and 10 hours annealing at 300/spl deg/C. This is the best implant isolation result obtained for InP lattice matched MODFET layer to our knowledge. This result allows us to realise planar InP lattice matched MODFET with a good isolation.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"156 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123610256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.491971
A. Wohlmutt, P. Fay, C. Caneau, I. Adesida
Metal-semiconductor-metal photodetectors (MSMPDs) have been shown to be important components for integrated optoelectronic receivers due to their high speed performance, low signal-to-noise ratio, and integrability with field-effect transistor technology. Since the signal-to-noise ratio of photodetectors is inversely proportional to the dark current, it is important to devise techniques to reduce the dark current while maintaining high speed performance. In this paper, we have reduced the dark current and also suppressed breakdown effects in InAlAs-InGaAs MSMPDs by placing the contact pads and the tips of the electrodes on an insulating layer of silicon nitride.
{"title":"Low dark current InAlAs/InGaAs metal-semiconductor-metal photodetectors","authors":"A. Wohlmutt, P. Fay, C. Caneau, I. Adesida","doi":"10.1109/ICIPRM.1996.491971","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491971","url":null,"abstract":"Metal-semiconductor-metal photodetectors (MSMPDs) have been shown to be important components for integrated optoelectronic receivers due to their high speed performance, low signal-to-noise ratio, and integrability with field-effect transistor technology. Since the signal-to-noise ratio of photodetectors is inversely proportional to the dark current, it is important to devise techniques to reduce the dark current while maintaining high speed performance. In this paper, we have reduced the dark current and also suppressed breakdown effects in InAlAs-InGaAs MSMPDs by placing the contact pads and the tips of the electrodes on an insulating layer of silicon nitride.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"220 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127658006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.491922
H. Lakner
Heterostructures based on III-V semiconductors play a dominant role for the production of optoelectronic and electronic high-speed or high-frequency devices. The necessary band-gap engineering is achieved by optimized growth procedures which allow to change the chemical composition and the crystal structure (e.g. strain or ordering) on the subnanometer scale. The evaluation of individual heterointerfaces with respect to chemical composition and crystal structure requires characterization techniques which offer the necessary high spatial resolution. Scanning transmission electron microscopy (STEM) offers several such quantitative techniques. It is the intention of this paper to demonstrate the capabilities of STEM in the subnanometer characterization of III-V-heterostructures based on InP-substrates. Additionally, the data obtained from nanocharacterization can be correlated to device performance.
{"title":"Subnanometer scale characterization of III-V-heterostructures","authors":"H. Lakner","doi":"10.1109/ICIPRM.1996.491922","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491922","url":null,"abstract":"Heterostructures based on III-V semiconductors play a dominant role for the production of optoelectronic and electronic high-speed or high-frequency devices. The necessary band-gap engineering is achieved by optimized growth procedures which allow to change the chemical composition and the crystal structure (e.g. strain or ordering) on the subnanometer scale. The evaluation of individual heterointerfaces with respect to chemical composition and crystal structure requires characterization techniques which offer the necessary high spatial resolution. Scanning transmission electron microscopy (STEM) offers several such quantitative techniques. It is the intention of this paper to demonstrate the capabilities of STEM in the subnanometer characterization of III-V-heterostructures based on InP-substrates. Additionally, the data obtained from nanocharacterization can be correlated to device performance.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121294878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492290
M. D'Hondt, I. Moerman, P. Demeester
We describe the influence of growth temperature, buffer layer structure and substrate orientation on the dark current density of test devices. All growth runs were performed by means of low-pressure MOVPE, using a horizontal liner. The processing of these devices consisted of deposition of TiAu contacts, by using a removable Ni mask, with openings of different size and shape. These metal contacts were in turn used as a mask for the etching of the mesa.
{"title":"Dark current reduction for 2.5 /spl mu/m wavelength, 2% mismatched InGaAs photodetectors, by changing bufferlayer structure and growth temperature","authors":"M. D'Hondt, I. Moerman, P. Demeester","doi":"10.1109/ICIPRM.1996.492290","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492290","url":null,"abstract":"We describe the influence of growth temperature, buffer layer structure and substrate orientation on the dark current density of test devices. All growth runs were performed by means of low-pressure MOVPE, using a horizontal liner. The processing of these devices consisted of deposition of TiAu contacts, by using a removable Ni mask, with openings of different size and shape. These metal contacts were in turn used as a mask for the etching of the mesa.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128971186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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