Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492043
B. Lescaut, Y.I. Nissim, J.F. Bresse
Stable and optimum characteristics of micro-optoelectronic devices and circuits require the passivation of the free surface of the III-V materials. An integrated process using a combination of surface cleaning and photochemical dielectric encapsulation is proposed for passivation. The passivation of InGaAs layer has been tempted using a surface cleaning processing in a distributed electron cyclotron resonant multipolar microwave plasma (DECR MMP). In-situ photoemission, ex-situ luminescence and MIS electrical measurements have been utilised to fully characterize the treatment. A substantial increase of surface luminescence signal is observed for an ammonia optimised plasma process. An Auger analysis brought some information about the cleaning mechanism. Namely carbon and oxygen are trapped in a thin gallium nitride film that is formed on the surface. This film can be easily removed from the surface. A UV silicon nitride film is then deposited on this ultra clean surface to stabilise the electronic properties without introducing any more contamination or defects. The resulting C(V) and I(V) measurement made on the protected surface are among the best ever reported for InGaAs surfaces.
{"title":"Passivation of InGaAs surfaces with an integrated process including an ammonia DECR plasma","authors":"B. Lescaut, Y.I. Nissim, J.F. Bresse","doi":"10.1109/ICIPRM.1996.492043","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492043","url":null,"abstract":"Stable and optimum characteristics of micro-optoelectronic devices and circuits require the passivation of the free surface of the III-V materials. An integrated process using a combination of surface cleaning and photochemical dielectric encapsulation is proposed for passivation. The passivation of InGaAs layer has been tempted using a surface cleaning processing in a distributed electron cyclotron resonant multipolar microwave plasma (DECR MMP). In-situ photoemission, ex-situ luminescence and MIS electrical measurements have been utilised to fully characterize the treatment. A substantial increase of surface luminescence signal is observed for an ammonia optimised plasma process. An Auger analysis brought some information about the cleaning mechanism. Namely carbon and oxygen are trapped in a thin gallium nitride film that is formed on the surface. This film can be easily removed from the surface. A UV silicon nitride film is then deposited on this ultra clean surface to stabilise the electronic properties without introducing any more contamination or defects. The resulting C(V) and I(V) measurement made on the protected surface are among the best ever reported for InGaAs surfaces.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115008380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492046
H. Fourre, O. Schuler, J. Pesant, A. Leroy, A. Cappy
We have investigated implant isolation for lattice matched InGaAs/InAlAs/InP Modulation Doped Field Effect Transistors (MODFETs). The sheet resistances of the MODFET layers were measured after implantation of different ions species (H/sup +/, B/sup +/, F/sup +/ and Ar/sup +/), for different ion doses (10/sup 12/-10/sup 15/ cm/sup -2/) and after post implant annealing (100/spl deg/C-400/spl deg/C) for different annealing time (10 min-24 h). The best measured sheet resistance was about 30 M/spl Omega///spl square/ using Ar/sup +/ implantation with a dose of 1.10/sup 15/ cm/sup -2/ and 10 hours annealing at 300/spl deg/C. This is the best implant isolation result obtained for InP lattice matched MODFET layer to our knowledge. This result allows us to realise planar InP lattice matched MODFET with a good isolation.
{"title":"Implant isolation for lattice matched InGaAs/InAlAs/InP modulation doped field effect transistor realisation","authors":"H. Fourre, O. Schuler, J. Pesant, A. Leroy, A. Cappy","doi":"10.1109/ICIPRM.1996.492046","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492046","url":null,"abstract":"We have investigated implant isolation for lattice matched InGaAs/InAlAs/InP Modulation Doped Field Effect Transistors (MODFETs). The sheet resistances of the MODFET layers were measured after implantation of different ions species (H/sup +/, B/sup +/, F/sup +/ and Ar/sup +/), for different ion doses (10/sup 12/-10/sup 15/ cm/sup -2/) and after post implant annealing (100/spl deg/C-400/spl deg/C) for different annealing time (10 min-24 h). The best measured sheet resistance was about 30 M/spl Omega///spl square/ using Ar/sup +/ implantation with a dose of 1.10/sup 15/ cm/sup -2/ and 10 hours annealing at 300/spl deg/C. This is the best implant isolation result obtained for InP lattice matched MODFET layer to our knowledge. This result allows us to realise planar InP lattice matched MODFET with a good isolation.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"156 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123610256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.491930
D. Zemke, H. Leister, G. Muller
The potential of the VGF process is analysed by using a flat bottom crucible for the growth of InP crystals with 2" diameter. Results of numerical simulations are used to design a set-up which can be run in a LEC facility. The EPD /spl ap/3/spl middot/10/sup 3/ cm/sup -2/ of the grown crystals is in accordance with calculated results based on an analysis of the thermal stress occurring during growth.
{"title":"Growth of InP bulk crystals by VGF: a comparative study of dislocation density and numerical stress analysis","authors":"D. Zemke, H. Leister, G. Muller","doi":"10.1109/ICIPRM.1996.491930","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491930","url":null,"abstract":"The potential of the VGF process is analysed by using a flat bottom crucible for the growth of InP crystals with 2\" diameter. Results of numerical simulations are used to design a set-up which can be run in a LEC facility. The EPD /spl ap/3/spl middot/10/sup 3/ cm/sup -2/ of the grown crystals is in accordance with calculated results based on an analysis of the thermal stress occurring during growth.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"93 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125535405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492385
N. Shigekawa, Takatomo Enoki, Tomofumi Furuta, Hiroshi Ito
InAlAs/InGaAs HEMTs latticed-matched to InP substrates are promising devices for high-speed application owing to their excellent high-frequency performances. Their low breakdown voltage and the appearance of a kink, however, limit their application to practical circuits. The impact ionization at the drain edge in the channel has been pointed out as the origin of these phenomena. Several authors have used electroluminescence (EL) from FETs composed of compound semiconductors to investigate the impact ionization in their channels. For InGaAs-based FETs, EL with energy far higher than the band gap of the channel has been already investigated. In this paper, we report measurements of the EL appearing from the top of the InAlAs/InGaAs HEMTs for energy lower than 1 eV at room temperature. We mainly discuss the carrier temperature extracted from the spectrum and the spatial distribution of the intensity. We also report the EL appearing from the cleaved side of the FET channel.
{"title":"Electroluminescence measurement of InAlAs/InGaAs HEMTs lattice-matched to InP substrates","authors":"N. Shigekawa, Takatomo Enoki, Tomofumi Furuta, Hiroshi Ito","doi":"10.1109/ICIPRM.1996.492385","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492385","url":null,"abstract":"InAlAs/InGaAs HEMTs latticed-matched to InP substrates are promising devices for high-speed application owing to their excellent high-frequency performances. Their low breakdown voltage and the appearance of a kink, however, limit their application to practical circuits. The impact ionization at the drain edge in the channel has been pointed out as the origin of these phenomena. Several authors have used electroluminescence (EL) from FETs composed of compound semiconductors to investigate the impact ionization in their channels. For InGaAs-based FETs, EL with energy far higher than the band gap of the channel has been already investigated. In this paper, we report measurements of the EL appearing from the top of the InAlAs/InGaAs HEMTs for energy lower than 1 eV at room temperature. We mainly discuss the carrier temperature extracted from the spectrum and the spatial distribution of the intensity. We also report the EL appearing from the cleaved side of the FET channel.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129845272","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.491961
D. Delprat, L. Silvestre, A. Ougazzaden, Franck Delorme, S. Slempkes, A. Ramdane
Wavelength tunable lasers are key devices for WDM optical communication systems. Several approaches have been used to realize these components such as butt-coupling, vertical coupling or Selective Area Growth (SAG). We used the latter owing to its simplicity for achieving, in only one epitaxial step, regions of different transition energy and high optical coupling factor. An optimized guide structure allowed us to reach a tuning range of 7 nm, which is to the best of our knowledge a record with this approach. The use of strained MQWs allows the active-passive wavelength detuning to be reduced down to about 80 nm which results in a quite stable output power (+1 dB) during tuning of the laser diode.
{"title":"Record tuning range of a 1.55 /spl mu/m DBR laser realized by selective area growth","authors":"D. Delprat, L. Silvestre, A. Ougazzaden, Franck Delorme, S. Slempkes, A. Ramdane","doi":"10.1109/ICIPRM.1996.491961","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491961","url":null,"abstract":"Wavelength tunable lasers are key devices for WDM optical communication systems. Several approaches have been used to realize these components such as butt-coupling, vertical coupling or Selective Area Growth (SAG). We used the latter owing to its simplicity for achieving, in only one epitaxial step, regions of different transition energy and high optical coupling factor. An optimized guide structure allowed us to reach a tuning range of 7 nm, which is to the best of our knowledge a record with this approach. The use of strained MQWs allows the active-passive wavelength detuning to be reduced down to about 80 nm which results in a quite stable output power (+1 dB) during tuning of the laser diode.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128248280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492330
D. Schreurs, Y. Baeyens, K. van der Zanden, J. Verspecht, M. Van Hove, W. De Raedt, B. Nauwelaers, M. Van Rossum
InP based HEMTs are the optimum choice for high-performant, low-noise microwave and especially millimetre wave MMICs. Regarding the stringent small-size requirement of future telecommunications systems, it is mandatory to extend the functionality to non-linear circuits. This clarifies why recently much attention is paid to non-linear HEMT modelling. The existing non-linear HEMT models, however, are elaborated for HEMTs in general and do not address explicitly the specific properties appropriate to InP based HEMTs. This paper summarizes the problem areas inherent to InP based HEMTs that are encountered with the most common non-linear model generation procedure. Adequate solutions to overcome these problems are successfully implemented in a large-signal table based model.
{"title":"Large-signal HEMT modelling, specifically optimized for InP based HEMTs","authors":"D. Schreurs, Y. Baeyens, K. van der Zanden, J. Verspecht, M. Van Hove, W. De Raedt, B. Nauwelaers, M. Van Rossum","doi":"10.1109/ICIPRM.1996.492330","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492330","url":null,"abstract":"InP based HEMTs are the optimum choice for high-performant, low-noise microwave and especially millimetre wave MMICs. Regarding the stringent small-size requirement of future telecommunications systems, it is mandatory to extend the functionality to non-linear circuits. This clarifies why recently much attention is paid to non-linear HEMT modelling. The existing non-linear HEMT models, however, are elaborated for HEMTs in general and do not address explicitly the specific properties appropriate to InP based HEMTs. This paper summarizes the problem areas inherent to InP based HEMTs that are encountered with the most common non-linear model generation procedure. Adequate solutions to overcome these problems are successfully implemented in a large-signal table based model.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"158 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120921939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492382
A. Gautier-Levine, P. Audren, G. Post, M. Favennec, J. Dumas
The drain lag effect is a low frequency parasitic response of field effect transistors on III-V semiconductors. HFET devices were fabricated with InP semiconductor and quaternary lattice-matched compound channels, respectively. From the study of the drain lag value of these two types of devices, the importance of proper technological processes is emphasized.
{"title":"A study of trap related drain lag effects in InP HFETs","authors":"A. Gautier-Levine, P. Audren, G. Post, M. Favennec, J. Dumas","doi":"10.1109/ICIPRM.1996.492382","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492382","url":null,"abstract":"The drain lag effect is a low frequency parasitic response of field effect transistors on III-V semiconductors. HFET devices were fabricated with InP semiconductor and quaternary lattice-matched compound channels, respectively. From the study of the drain lag value of these two types of devices, the importance of proper technological processes is emphasized.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120947852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.491948
T. Bottner, H. Krautle, E. Kuphal, K. Miethe, H. Hartnagel
Systematic investigations are performed on the effect of reactive ion etching (RIE) using CH/sub 4//H/sub 2/ based gases on InP based semiconductors. From rutherford backscattering analysis a strong dependence of crystalline damage on process parameters is found leading to a damaged region of less than 3 nm for an optimized process. Capacitance voltage profiling shows the effect of hydrogen channeling up to 0.5 /spl mu/m deep into the semiconductor creating acceptor passivation which can be completely removed by annealing at low temperature. Using low temperature photoluminescence measurements on multiquantumwell structures, it is shown that the RIE process does not affect photoluminescence properties of quantum wells remarkably until the covering barrier is etched down to few nm. From these measurements a damage model of the etched semiconductor surface is presented. Sidewall damage of RIE etched InGaAs/InP Mesa-PIN-diodes is characterized by analyzing surface leakage currents. Furthermore, effects of different post-etch treatments on leakage currents are shown. By an optimized CH/sub 4//H/sub 2//Ar-RIE process PIN-photodiodes are fabricated with dark current densities as low as 1.8/spl times/10/sup -5/ A cm/sup -2/ (bias voltage is -5 V) which are comparable to the best published wet etched Mesa-PIN-photodiodes.
系统研究了CH/sub - 4/ H/sub - 2基气体对InP基半导体反应离子刻蚀(RIE)的影响。从卢瑟福后向散射分析中发现，晶体损伤与工艺参数的强烈依赖导致优化工艺的损伤区域小于3 nm。电容电压谱显示，氢通道深度可达0.5 /spl μ m /m，在半导体中产生受体钝化，可以通过低温退火完全消除。通过对多量子阱结构的低温光致发光测量表明，在覆盖势垒蚀刻到几nm之前，RIE过程对量子阱的光致发光性能没有显著影响。根据这些测量结果，提出了蚀刻半导体表面的损伤模型。通过分析表面泄漏电流，对RIE蚀刻InGaAs/InP台面pin二极管的侧壁损伤进行了表征。此外，还分析了不同蚀刻后处理对漏电流的影响。通过优化的CH/sub 4//H/sub 2//Ar-RIE工艺，可以制造出暗电流密度低至1.8/spl倍/10/sup -5/ A cm/sup -2/(偏置电压为-5 V)的pin -光电二极管，与已发表的最佳湿蚀刻台面pin -光电二极管相当。
{"title":"Surface- and sidewall-damage of InP-based optoelectronic devices during reactive ion etching using CH/sub 4//H/sub 2/","authors":"T. Bottner, H. Krautle, E. Kuphal, K. Miethe, H. Hartnagel","doi":"10.1109/ICIPRM.1996.491948","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491948","url":null,"abstract":"Systematic investigations are performed on the effect of reactive ion etching (RIE) using CH/sub 4//H/sub 2/ based gases on InP based semiconductors. From rutherford backscattering analysis a strong dependence of crystalline damage on process parameters is found leading to a damaged region of less than 3 nm for an optimized process. Capacitance voltage profiling shows the effect of hydrogen channeling up to 0.5 /spl mu/m deep into the semiconductor creating acceptor passivation which can be completely removed by annealing at low temperature. Using low temperature photoluminescence measurements on multiquantumwell structures, it is shown that the RIE process does not affect photoluminescence properties of quantum wells remarkably until the covering barrier is etched down to few nm. From these measurements a damage model of the etched semiconductor surface is presented. Sidewall damage of RIE etched InGaAs/InP Mesa-PIN-diodes is characterized by analyzing surface leakage currents. Furthermore, effects of different post-etch treatments on leakage currents are shown. By an optimized CH/sub 4//H/sub 2//Ar-RIE process PIN-photodiodes are fabricated with dark current densities as low as 1.8/spl times/10/sup -5/ A cm/sup -2/ (bias voltage is -5 V) which are comparable to the best published wet etched Mesa-PIN-photodiodes.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121225833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492293
W. Strupinski, M. Czub, J. Gaca, M. Wójcik
The growth of MOVPE heterostructures, especially when thickness of single layers is the order of several ML requires high structural quality of interface transition regions. Structural disorder on the atomic scale called interface roughness and alloy fluctuations related to exchange and carry-over processes determine the final device parameters. This paper is devoted to the examination of the correlation between the growth parameters and the interface ideality in view of chemical composition for the case InP/InGaAs/InP. Among different techniques, i.e. PL, CL, HTEM, which are applied for evaluation of interface character, the X-ray method was chosen.
{"title":"Studies on gas-switching sequences influence on the quality of MOVPE InGaAs/InP superlattice structures","authors":"W. Strupinski, M. Czub, J. Gaca, M. Wójcik","doi":"10.1109/ICIPRM.1996.492293","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492293","url":null,"abstract":"The growth of MOVPE heterostructures, especially when thickness of single layers is the order of several ML requires high structural quality of interface transition regions. Structural disorder on the atomic scale called interface roughness and alloy fluctuations related to exchange and carry-over processes determine the final device parameters. This paper is devoted to the examination of the correlation between the growth parameters and the interface ideality in view of chemical composition for the case InP/InGaAs/InP. Among different techniques, i.e. PL, CL, HTEM, which are applied for evaluation of interface character, the X-ray method was chosen.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122367462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492291
V. Souliere, V. Thevenot, H. Dumont, Y. Monteil, J. Bouix, P. Regreny, T. Duc
Our objective is the investigation of MOVPE growth mechanisms for InP. We focused on the surface topography observed by Atomic Force Microscopy (AFM). It is known that growth conditions such as thermal annealing, growth temperature or V/III ratio have a strong influence on growth mechanisms and surface topography. We present recent results on growth mechanisms on vicinal and highly misoriented InP surfaces studied by AFM.
{"title":"AFM study of surface topography of InP epilayers: effect of miscut angle and growth temperature during MOVPE","authors":"V. Souliere, V. Thevenot, H. Dumont, Y. Monteil, J. Bouix, P. Regreny, T. Duc","doi":"10.1109/ICIPRM.1996.492291","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492291","url":null,"abstract":"Our objective is the investigation of MOVPE growth mechanisms for InP. We focused on the surface topography observed by Atomic Force Microscopy (AFM). It is known that growth conditions such as thermal annealing, growth temperature or V/III ratio have a strong influence on growth mechanisms and surface topography. We present recent results on growth mechanisms on vicinal and highly misoriented InP surfaces studied by AFM.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"11 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120814656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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