Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492261
M. Yamamoto, Y. Itaya, T. Sugie
A 1.3 /spl mu/m laser diode with a butt-jointed spotsize converter was successfully fabricated with a 2-inch full wafer process. Although the laser diodes are integrated with the spot-size converter, a threshold current of less than 5.6 mA and slope efficiency as large as 0.41 W/A at 25 C were obtained. These results demonstrate that the newly developed SSC-LD is promising as a light source for a low cost optical module for access networks.
{"title":"1.3-/spl mu/m laser diodes with spot-size converter for access networks","authors":"M. Yamamoto, Y. Itaya, T. Sugie","doi":"10.1109/ICIPRM.1996.492261","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492261","url":null,"abstract":"A 1.3 /spl mu/m laser diode with a butt-jointed spotsize converter was successfully fabricated with a 2-inch full wafer process. Although the laser diodes are integrated with the spot-size converter, a threshold current of less than 5.6 mA and slope efficiency as large as 0.41 W/A at 25 C were obtained. These results demonstrate that the newly developed SSC-LD is promising as a light source for a low cost optical module for access networks.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132231784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492255
J. B. Boos, W. Kruppa, Doe Park, B. Molnar, R. Bass, M. Goldenberg, B. R. Bennett, J. Mittereder
We report on the fabrication and characteristics of Pd/Pt/Au and AuGe/Ni/Pt/Au ohmic contact metalizations for AlSb/InAs HEMTs. For the AuGe/Ni/Pt/Au contact, a contact resistance of 0.11 /spl Omega/-mm was achieved using a 300/spl deg/C rapid thermal anneal. Auger depth profiling revealed considerable Au in-diffusion. Using this contact, 0.2 /spl mu/m gate-length AlSb/InAs HEMTs were fabricated which exhibit a low-field source-drain resistance of 0.61 /spl Omega/-mm and a transconductance of 1.3 S/mm. For the Pd/Pt/Au contact, a contact resistance of 0.08 /spl Omega/-mm was achieved using a 175/spl deg/C hot plate heat treatment. Auger depth profiling revealed that the diffusion of the Pd/Pt/Au contact is significantly less than that of the AuGe/Ni/Pt/Au contact. Using the Pd/Pt/Au contact, 0.5 /spl mu/m gate-length AlSb/InAs HEMTs were fabricated which exhibit a low-field source-drain resistance of 0.47 /spl Omega/-mm.
{"title":"Pd/Pt/Au and AuGe/Ni/Pt/Au ohmic contacts for AlSb/InAs HEMTs","authors":"J. B. Boos, W. Kruppa, Doe Park, B. Molnar, R. Bass, M. Goldenberg, B. R. Bennett, J. Mittereder","doi":"10.1109/ICIPRM.1996.492255","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492255","url":null,"abstract":"We report on the fabrication and characteristics of Pd/Pt/Au and AuGe/Ni/Pt/Au ohmic contact metalizations for AlSb/InAs HEMTs. For the AuGe/Ni/Pt/Au contact, a contact resistance of 0.11 /spl Omega/-mm was achieved using a 300/spl deg/C rapid thermal anneal. Auger depth profiling revealed considerable Au in-diffusion. Using this contact, 0.2 /spl mu/m gate-length AlSb/InAs HEMTs were fabricated which exhibit a low-field source-drain resistance of 0.61 /spl Omega/-mm and a transconductance of 1.3 S/mm. For the Pd/Pt/Au contact, a contact resistance of 0.08 /spl Omega/-mm was achieved using a 175/spl deg/C hot plate heat treatment. Auger depth profiling revealed that the diffusion of the Pd/Pt/Au contact is significantly less than that of the AuGe/Ni/Pt/Au contact. Using the Pd/Pt/Au contact, 0.5 /spl mu/m gate-length AlSb/InAs HEMTs were fabricated which exhibit a low-field source-drain resistance of 0.47 /spl Omega/-mm.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133660288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492043
B. Lescaut, Y.I. Nissim, J.F. Bresse
Stable and optimum characteristics of micro-optoelectronic devices and circuits require the passivation of the free surface of the III-V materials. An integrated process using a combination of surface cleaning and photochemical dielectric encapsulation is proposed for passivation. The passivation of InGaAs layer has been tempted using a surface cleaning processing in a distributed electron cyclotron resonant multipolar microwave plasma (DECR MMP). In-situ photoemission, ex-situ luminescence and MIS electrical measurements have been utilised to fully characterize the treatment. A substantial increase of surface luminescence signal is observed for an ammonia optimised plasma process. An Auger analysis brought some information about the cleaning mechanism. Namely carbon and oxygen are trapped in a thin gallium nitride film that is formed on the surface. This film can be easily removed from the surface. A UV silicon nitride film is then deposited on this ultra clean surface to stabilise the electronic properties without introducing any more contamination or defects. The resulting C(V) and I(V) measurement made on the protected surface are among the best ever reported for InGaAs surfaces.
{"title":"Passivation of InGaAs surfaces with an integrated process including an ammonia DECR plasma","authors":"B. Lescaut, Y.I. Nissim, J.F. Bresse","doi":"10.1109/ICIPRM.1996.492043","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492043","url":null,"abstract":"Stable and optimum characteristics of micro-optoelectronic devices and circuits require the passivation of the free surface of the III-V materials. An integrated process using a combination of surface cleaning and photochemical dielectric encapsulation is proposed for passivation. The passivation of InGaAs layer has been tempted using a surface cleaning processing in a distributed electron cyclotron resonant multipolar microwave plasma (DECR MMP). In-situ photoemission, ex-situ luminescence and MIS electrical measurements have been utilised to fully characterize the treatment. A substantial increase of surface luminescence signal is observed for an ammonia optimised plasma process. An Auger analysis brought some information about the cleaning mechanism. Namely carbon and oxygen are trapped in a thin gallium nitride film that is formed on the surface. This film can be easily removed from the surface. A UV silicon nitride film is then deposited on this ultra clean surface to stabilise the electronic properties without introducing any more contamination or defects. The resulting C(V) and I(V) measurement made on the protected surface are among the best ever reported for InGaAs surfaces.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115008380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.491948
T. Bottner, H. Krautle, E. Kuphal, K. Miethe, H. Hartnagel
Systematic investigations are performed on the effect of reactive ion etching (RIE) using CH/sub 4//H/sub 2/ based gases on InP based semiconductors. From rutherford backscattering analysis a strong dependence of crystalline damage on process parameters is found leading to a damaged region of less than 3 nm for an optimized process. Capacitance voltage profiling shows the effect of hydrogen channeling up to 0.5 /spl mu/m deep into the semiconductor creating acceptor passivation which can be completely removed by annealing at low temperature. Using low temperature photoluminescence measurements on multiquantumwell structures, it is shown that the RIE process does not affect photoluminescence properties of quantum wells remarkably until the covering barrier is etched down to few nm. From these measurements a damage model of the etched semiconductor surface is presented. Sidewall damage of RIE etched InGaAs/InP Mesa-PIN-diodes is characterized by analyzing surface leakage currents. Furthermore, effects of different post-etch treatments on leakage currents are shown. By an optimized CH/sub 4//H/sub 2//Ar-RIE process PIN-photodiodes are fabricated with dark current densities as low as 1.8/spl times/10/sup -5/ A cm/sup -2/ (bias voltage is -5 V) which are comparable to the best published wet etched Mesa-PIN-photodiodes.
系统研究了CH/sub - 4/ H/sub - 2基气体对InP基半导体反应离子刻蚀(RIE)的影响。从卢瑟福后向散射分析中发现，晶体损伤与工艺参数的强烈依赖导致优化工艺的损伤区域小于3 nm。电容电压谱显示，氢通道深度可达0.5 /spl μ m /m，在半导体中产生受体钝化，可以通过低温退火完全消除。通过对多量子阱结构的低温光致发光测量表明，在覆盖势垒蚀刻到几nm之前，RIE过程对量子阱的光致发光性能没有显著影响。根据这些测量结果，提出了蚀刻半导体表面的损伤模型。通过分析表面泄漏电流，对RIE蚀刻InGaAs/InP台面pin二极管的侧壁损伤进行了表征。此外，还分析了不同蚀刻后处理对漏电流的影响。通过优化的CH/sub 4//H/sub 2//Ar-RIE工艺，可以制造出暗电流密度低至1.8/spl倍/10/sup -5/ A cm/sup -2/(偏置电压为-5 V)的pin -光电二极管，与已发表的最佳湿蚀刻台面pin -光电二极管相当。
{"title":"Surface- and sidewall-damage of InP-based optoelectronic devices during reactive ion etching using CH/sub 4//H/sub 2/","authors":"T. Bottner, H. Krautle, E. Kuphal, K. Miethe, H. Hartnagel","doi":"10.1109/ICIPRM.1996.491948","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491948","url":null,"abstract":"Systematic investigations are performed on the effect of reactive ion etching (RIE) using CH/sub 4//H/sub 2/ based gases on InP based semiconductors. From rutherford backscattering analysis a strong dependence of crystalline damage on process parameters is found leading to a damaged region of less than 3 nm for an optimized process. Capacitance voltage profiling shows the effect of hydrogen channeling up to 0.5 /spl mu/m deep into the semiconductor creating acceptor passivation which can be completely removed by annealing at low temperature. Using low temperature photoluminescence measurements on multiquantumwell structures, it is shown that the RIE process does not affect photoluminescence properties of quantum wells remarkably until the covering barrier is etched down to few nm. From these measurements a damage model of the etched semiconductor surface is presented. Sidewall damage of RIE etched InGaAs/InP Mesa-PIN-diodes is characterized by analyzing surface leakage currents. Furthermore, effects of different post-etch treatments on leakage currents are shown. By an optimized CH/sub 4//H/sub 2//Ar-RIE process PIN-photodiodes are fabricated with dark current densities as low as 1.8/spl times/10/sup -5/ A cm/sup -2/ (bias voltage is -5 V) which are comparable to the best published wet etched Mesa-PIN-photodiodes.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121225833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492330
D. Schreurs, Y. Baeyens, K. van der Zanden, J. Verspecht, M. Van Hove, W. De Raedt, B. Nauwelaers, M. Van Rossum
InP based HEMTs are the optimum choice for high-performant, low-noise microwave and especially millimetre wave MMICs. Regarding the stringent small-size requirement of future telecommunications systems, it is mandatory to extend the functionality to non-linear circuits. This clarifies why recently much attention is paid to non-linear HEMT modelling. The existing non-linear HEMT models, however, are elaborated for HEMTs in general and do not address explicitly the specific properties appropriate to InP based HEMTs. This paper summarizes the problem areas inherent to InP based HEMTs that are encountered with the most common non-linear model generation procedure. Adequate solutions to overcome these problems are successfully implemented in a large-signal table based model.
{"title":"Large-signal HEMT modelling, specifically optimized for InP based HEMTs","authors":"D. Schreurs, Y. Baeyens, K. van der Zanden, J. Verspecht, M. Van Hove, W. De Raedt, B. Nauwelaers, M. Van Rossum","doi":"10.1109/ICIPRM.1996.492330","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492330","url":null,"abstract":"InP based HEMTs are the optimum choice for high-performant, low-noise microwave and especially millimetre wave MMICs. Regarding the stringent small-size requirement of future telecommunications systems, it is mandatory to extend the functionality to non-linear circuits. This clarifies why recently much attention is paid to non-linear HEMT modelling. The existing non-linear HEMT models, however, are elaborated for HEMTs in general and do not address explicitly the specific properties appropriate to InP based HEMTs. This paper summarizes the problem areas inherent to InP based HEMTs that are encountered with the most common non-linear model generation procedure. Adequate solutions to overcome these problems are successfully implemented in a large-signal table based model.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"158 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120921939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492293
W. Strupinski, M. Czub, J. Gaca, M. Wójcik
The growth of MOVPE heterostructures, especially when thickness of single layers is the order of several ML requires high structural quality of interface transition regions. Structural disorder on the atomic scale called interface roughness and alloy fluctuations related to exchange and carry-over processes determine the final device parameters. This paper is devoted to the examination of the correlation between the growth parameters and the interface ideality in view of chemical composition for the case InP/InGaAs/InP. Among different techniques, i.e. PL, CL, HTEM, which are applied for evaluation of interface character, the X-ray method was chosen.
{"title":"Studies on gas-switching sequences influence on the quality of MOVPE InGaAs/InP superlattice structures","authors":"W. Strupinski, M. Czub, J. Gaca, M. Wójcik","doi":"10.1109/ICIPRM.1996.492293","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492293","url":null,"abstract":"The growth of MOVPE heterostructures, especially when thickness of single layers is the order of several ML requires high structural quality of interface transition regions. Structural disorder on the atomic scale called interface roughness and alloy fluctuations related to exchange and carry-over processes determine the final device parameters. This paper is devoted to the examination of the correlation between the growth parameters and the interface ideality in view of chemical composition for the case InP/InGaAs/InP. Among different techniques, i.e. PL, CL, HTEM, which are applied for evaluation of interface character, the X-ray method was chosen.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122367462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492019
S. Tanaka, K. Utaka, T. Yamamoto, M. Horita, Y. Matsusbima
We propose a novel wavelength filter using a grating-assisted vertical contra-directional coupler for an add and drop multiplexer (ADM). It is predicted from our calculations that the bandwidths of the filter can be narrow less than 1 nm and easily controllable by means of the optimization of the device parameters. We have successfully fabricated the InP-based semiconductor filter and also demonstrated filtering bandwidth as narrow as 0.7 nm which is consistent with our calculations.
{"title":"Proposal of new narrow-band wavelength filter using grating-assisted vertical contra-directional coupler","authors":"S. Tanaka, K. Utaka, T. Yamamoto, M. Horita, Y. Matsusbima","doi":"10.1109/ICIPRM.1996.492019","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492019","url":null,"abstract":"We propose a novel wavelength filter using a grating-assisted vertical contra-directional coupler for an add and drop multiplexer (ADM). It is predicted from our calculations that the bandwidths of the filter can be narrow less than 1 nm and easily controllable by means of the optimization of the device parameters. We have successfully fabricated the InP-based semiconductor filter and also demonstrated filtering bandwidth as narrow as 0.7 nm which is consistent with our calculations.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128285684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.491952
G. Haddad
Resonant tunneling heterojunction bipolar transistors (RTBT's) or RTD and HBT combinations are particularly suitable for very high speed/low-power digital circuits. Here we will present recent results on InP-based devices and their applications.
{"title":"Resonant tunneling heterojunction bipolar transistors and their applications in high functionality/speed digital circuits","authors":"G. Haddad","doi":"10.1109/ICIPRM.1996.491952","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491952","url":null,"abstract":"Resonant tunneling heterojunction bipolar transistors (RTBT's) or RTD and HBT combinations are particularly suitable for very high speed/low-power digital circuits. Here we will present recent results on InP-based devices and their applications.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130353957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492331
S. van Waasen, G. Janssen, R. Bertenburg, R. Reuter, F. Tegude
The applicability of the transimpedance amplifier for optoelectronic receivers becomes doubtful for bit rates higher than 20 Gb/s. So recently the traveling wave amplifier (TWA) concept for high bit rate receiver systems is of increasing interest because it is the preferred amplifier concept for broadband applications like hierarchically organized communication interlinks. TWAs usually are designed with an input and output impedance of 50 /spl Omega/. Thus a main problem of the TWA-concept for an optoelectronic receiver is matching the photo-detector (PD) and the TWA input and reach the requested input RC-bandwidth. The conventional approach is a TWA with an additional 50 /spl Omega/ match resistor at the input line, which has to be integrated directly into the PD itself in order to avoid parasitics. The aim of this paper is to present an alternative concept to the match resistor realized by a TWA with a low-impedance input (25 /spl Omega/), which yields significantly reduced design and fabrication efforts. All simulations for the investigated and optimized designs of the TWA in coplanar technique have been carried out using a commercially available software. For exact noise and sensitivity simulations, an extended temperature noise model (TNM) for heterostructure field-effect transistors was developed and implemented. Finally a comparison with measurement results of the realized TWA is presented.
{"title":"Development of a low-impedance traveling wave amplifier based on InAlAs/InGaAs/InP-HFET for 20 Gb/s optoelectronic receivers","authors":"S. van Waasen, G. Janssen, R. Bertenburg, R. Reuter, F. Tegude","doi":"10.1109/ICIPRM.1996.492331","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492331","url":null,"abstract":"The applicability of the transimpedance amplifier for optoelectronic receivers becomes doubtful for bit rates higher than 20 Gb/s. So recently the traveling wave amplifier (TWA) concept for high bit rate receiver systems is of increasing interest because it is the preferred amplifier concept for broadband applications like hierarchically organized communication interlinks. TWAs usually are designed with an input and output impedance of 50 /spl Omega/. Thus a main problem of the TWA-concept for an optoelectronic receiver is matching the photo-detector (PD) and the TWA input and reach the requested input RC-bandwidth. The conventional approach is a TWA with an additional 50 /spl Omega/ match resistor at the input line, which has to be integrated directly into the PD itself in order to avoid parasitics. The aim of this paper is to present an alternative concept to the match resistor realized by a TWA with a low-impedance input (25 /spl Omega/), which yields significantly reduced design and fabrication efforts. All simulations for the investigated and optimized designs of the TWA in coplanar technique have been carried out using a commercially available software. For exact noise and sensitivity simulations, an extended temperature noise model (TNM) for heterostructure field-effect transistors was developed and implemented. Finally a comparison with measurement results of the realized TWA is presented.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130382016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492385
N. Shigekawa, Takatomo Enoki, Tomofumi Furuta, Hiroshi Ito
InAlAs/InGaAs HEMTs latticed-matched to InP substrates are promising devices for high-speed application owing to their excellent high-frequency performances. Their low breakdown voltage and the appearance of a kink, however, limit their application to practical circuits. The impact ionization at the drain edge in the channel has been pointed out as the origin of these phenomena. Several authors have used electroluminescence (EL) from FETs composed of compound semiconductors to investigate the impact ionization in their channels. For InGaAs-based FETs, EL with energy far higher than the band gap of the channel has been already investigated. In this paper, we report measurements of the EL appearing from the top of the InAlAs/InGaAs HEMTs for energy lower than 1 eV at room temperature. We mainly discuss the carrier temperature extracted from the spectrum and the spatial distribution of the intensity. We also report the EL appearing from the cleaved side of the FET channel.
{"title":"Electroluminescence measurement of InAlAs/InGaAs HEMTs lattice-matched to InP substrates","authors":"N. Shigekawa, Takatomo Enoki, Tomofumi Furuta, Hiroshi Ito","doi":"10.1109/ICIPRM.1996.492385","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492385","url":null,"abstract":"InAlAs/InGaAs HEMTs latticed-matched to InP substrates are promising devices for high-speed application owing to their excellent high-frequency performances. Their low breakdown voltage and the appearance of a kink, however, limit their application to practical circuits. The impact ionization at the drain edge in the channel has been pointed out as the origin of these phenomena. Several authors have used electroluminescence (EL) from FETs composed of compound semiconductors to investigate the impact ionization in their channels. For InGaAs-based FETs, EL with energy far higher than the band gap of the channel has been already investigated. In this paper, we report measurements of the EL appearing from the top of the InAlAs/InGaAs HEMTs for energy lower than 1 eV at room temperature. We mainly discuss the carrier temperature extracted from the spectrum and the spatial distribution of the intensity. We also report the EL appearing from the cleaved side of the FET channel.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129845272","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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