Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492024
B. Ooi, E. L. Portnoi, C. J. McLean, A. McKee, C.C. Bunon, A. C. Bryce, Richard M. De La Rue, J. Marsh
A new quantum well intermixing technique, which involves irradiating multiple quantum well material with high energy laser pulses and producing transient heating, has been developed. A Q-switched Nd:YAG laser with pulse length of /spl sim/7 ns, repetition rate of 10 Hz and pulse energy density /spl sim/5 mJ mm/sup -2/ is used to generate a localised increase in the density of point defects. After subsequent annealing in a rapid thermal processor bandgap shifts of over 100 nm were observed. The spatial resolution was investigated by masking the sample with a metal mask. Spatially resolved photoluminescence measurements showed that the resolution of the process was 25 /spl mu/m or better, this measurement being limited by the resolution of the photoluminescence set up. Gratings, with a pitch of 2.5 /spl mu/m, were wet-etched into the back of waveguide samples, and the samples were irradiated through the grating and annealed as before. Waveguide transmission spectra showed a dip in the transmitted intensity around a wavelength of 1.525 /spl mu/m indicating that a grating had been formed.
{"title":"Direct writing of gratings in GaInAs/GaInAsP quantum wells using pulsed laser irradiation","authors":"B. Ooi, E. L. Portnoi, C. J. McLean, A. McKee, C.C. Bunon, A. C. Bryce, Richard M. De La Rue, J. Marsh","doi":"10.1109/ICIPRM.1996.492024","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492024","url":null,"abstract":"A new quantum well intermixing technique, which involves irradiating multiple quantum well material with high energy laser pulses and producing transient heating, has been developed. A Q-switched Nd:YAG laser with pulse length of /spl sim/7 ns, repetition rate of 10 Hz and pulse energy density /spl sim/5 mJ mm/sup -2/ is used to generate a localised increase in the density of point defects. After subsequent annealing in a rapid thermal processor bandgap shifts of over 100 nm were observed. The spatial resolution was investigated by masking the sample with a metal mask. Spatially resolved photoluminescence measurements showed that the resolution of the process was 25 /spl mu/m or better, this measurement being limited by the resolution of the photoluminescence set up. Gratings, with a pitch of 2.5 /spl mu/m, were wet-etched into the back of waveguide samples, and the samples were irradiated through the grating and annealed as before. Waveguide transmission spectra showed a dip in the transmitted intensity around a wavelength of 1.525 /spl mu/m indicating that a grating had been formed.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"239-241 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128515477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492300
J. Gentner, P. Jarry, L. Goldstein
We report for the first time the successful etching of InP/GaInAsP heterostructures by the chemical beam etching technique using PCl/sub 3/, and on the combination of this etching technique with regrowth using standard GSMBE conditions. The kinetics of etching have been studied over a large temperature range. The difference in etch rates between InP and GaInAsP is explained by a difference in the group III chloride stoichiometry (InCl, GaCl/sub 3/). This difference leads probably to a modification of the surface composition during etching, the surface becoming richer in Ga. The dopants (Si, Be) are found to accumulate at the etch/regrown interface. The silicon atoms are not removed and create a /spl delta/-doped layer at the regrowth interface, The surface morphology of etched samples have been improved by etching at low temperature, in agreement with the RHEED observations showing a smooth 2D layer by layer etching mode in this case. In particular, the decoration of dislocations observed after etching at high temperature is not found on low temperature etched samples. This low temperature etching procedure is well adapted to the regrowth of high quality InP/GaInAsP structures.
{"title":"Single run etching and regrowth of InP/GaInAsP by GSMBE","authors":"J. Gentner, P. Jarry, L. Goldstein","doi":"10.1109/ICIPRM.1996.492300","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492300","url":null,"abstract":"We report for the first time the successful etching of InP/GaInAsP heterostructures by the chemical beam etching technique using PCl/sub 3/, and on the combination of this etching technique with regrowth using standard GSMBE conditions. The kinetics of etching have been studied over a large temperature range. The difference in etch rates between InP and GaInAsP is explained by a difference in the group III chloride stoichiometry (InCl, GaCl/sub 3/). This difference leads probably to a modification of the surface composition during etching, the surface becoming richer in Ga. The dopants (Si, Be) are found to accumulate at the etch/regrown interface. The silicon atoms are not removed and create a /spl delta/-doped layer at the regrowth interface, The surface morphology of etched samples have been improved by etching at low temperature, in agreement with the RHEED observations showing a smooth 2D layer by layer etching mode in this case. In particular, the decoration of dislocations observed after etching at high temperature is not found on low temperature etched samples. This low temperature etching procedure is well adapted to the regrowth of high quality InP/GaInAsP structures.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116775494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492051
M. Park, L.C. Wang, J.Y. Cheng, F. Deng, S. Lau, C. Palmstrøm
A low resistance Zn/Pd ohmic contact scheme to p-InP based on the solid phase regrowth principle has been investigated. The lowest contact resistivity (mid 10/sup -5/ /spl Omega/-cm/sup 2/) has been obtained for contacts with an atomic ratio of Zn to Pd of /spl sim/1.5. The solid phase regrowth process has been confirmed in the Zn/Pd/InP system. In addition to the solid phase regrowth process, a Zn/sub 3/P/sub 2//InP heterojunction is formed at the contact/semiconductor interface. The ohmic contact formation mechanism is rationalized with the formation of Zn/sub 3/P/sub 2//InP heterojunction. Also, it was found that the TLM plot for the thick-Zn (>600 /spl Aring/) sample started to show abnormal data distribution for annealing temperatures higher than 480/spl deg/C. This abnormal behavior may be caused by the lateral Zn diffusion from the excess Zn in the contact pads into the off-mesa area during annealing.
{"title":"Pd/Zn/Pd ohmic contact to p-InP","authors":"M. Park, L.C. Wang, J.Y. Cheng, F. Deng, S. Lau, C. Palmstrøm","doi":"10.1109/ICIPRM.1996.492051","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492051","url":null,"abstract":"A low resistance Zn/Pd ohmic contact scheme to p-InP based on the solid phase regrowth principle has been investigated. The lowest contact resistivity (mid 10/sup -5/ /spl Omega/-cm/sup 2/) has been obtained for contacts with an atomic ratio of Zn to Pd of /spl sim/1.5. The solid phase regrowth process has been confirmed in the Zn/Pd/InP system. In addition to the solid phase regrowth process, a Zn/sub 3/P/sub 2//InP heterojunction is formed at the contact/semiconductor interface. The ohmic contact formation mechanism is rationalized with the formation of Zn/sub 3/P/sub 2//InP heterojunction. Also, it was found that the TLM plot for the thick-Zn (>600 /spl Aring/) sample started to show abnormal data distribution for annealing temperatures higher than 480/spl deg/C. This abnormal behavior may be caused by the lateral Zn diffusion from the excess Zn in the contact pads into the off-mesa area during annealing.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116780295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492044
H. Fujikura, S. Kodama, H. Hasegawa
Applicability of the Si interface control layer (ICL) based passivation technique to compound semiconductor quantum structures was investigated by using In/sub 0.53/Ga/sub 0.47/As wires formed by selective MBE growth. Photoluminescence (PL) intensity from the quantum wires (QWRs) reduced rapidly with reducing the well-to-surface distance t/sub ws/. This PL reduction can be explained in terms of the carrier loss due to the rapid nonradiative recombination process at the surfaces. By applying the Si ICL-based passivation process to the wires, the PL reduction was effectively suppressed and a nearly complete recovery of PL intensity can be achieved, showing a maximum recovery factor of the PL intensity of 250. The recovery of PL intensity is due to reduction of interface state densities by Si ICL process which realizes reasonably ordered and coherent interface structures as indicated by XPS analysis.
{"title":"Surface passivation of InP-based In/sub 0.53/Ga/sub 0.47/As quantum wires using silicon interlayer-based passivation technique","authors":"H. Fujikura, S. Kodama, H. Hasegawa","doi":"10.1109/ICIPRM.1996.492044","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492044","url":null,"abstract":"Applicability of the Si interface control layer (ICL) based passivation technique to compound semiconductor quantum structures was investigated by using In/sub 0.53/Ga/sub 0.47/As wires formed by selective MBE growth. Photoluminescence (PL) intensity from the quantum wires (QWRs) reduced rapidly with reducing the well-to-surface distance t/sub ws/. This PL reduction can be explained in terms of the carrier loss due to the rapid nonradiative recombination process at the surfaces. By applying the Si ICL-based passivation process to the wires, the PL reduction was effectively suppressed and a nearly complete recovery of PL intensity can be achieved, showing a maximum recovery factor of the PL intensity of 250. The recovery of PL intensity is due to reduction of interface state densities by Si ICL process which realizes reasonably ordered and coherent interface structures as indicated by XPS analysis.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115535455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492391
K. Somogyi
Summary form only given. In this paper methods and results in InP (and related compounds) growth practice are reviewed, classified and summarised on the basis of the recent literature. The aim is to show the present place and role of halogen transport in epitaxial growth. In the case of InP the importance of the classical hydride method is still high. Though MOVPE technique dominates in the case of growth of compounds with In content, atomic layer epitaxy and selective area growth are successful with auxiliary application of halogen transport. Chlorine assisted MOVPE has an increasing role.
{"title":"Use of halide transport in epitaxial growth of InP and related compounds","authors":"K. Somogyi","doi":"10.1109/ICIPRM.1996.492391","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492391","url":null,"abstract":"Summary form only given. In this paper methods and results in InP (and related compounds) growth practice are reviewed, classified and summarised on the basis of the recent literature. The aim is to show the present place and role of halogen transport in epitaxial growth. In the case of InP the importance of the classical hydride method is still high. Though MOVPE technique dominates in the case of growth of compounds with In content, atomic layer epitaxy and selective area growth are successful with auxiliary application of halogen transport. Chlorine assisted MOVPE has an increasing role.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114189225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492029
C. Knorr, U. Wilhelm, D. Ottenwlilder, E. Scholz, A. Hangleiter
We presented a specially designed SCMQW structure, where hole transport is controlled by an additional large heterobarrier. This barrier gives access to steady state escape times by measuring the charge carrier induced field change in the MQW region. We get a minimum value for the hole extraction time over the barrier of several at 77 K. At a temperature of 200 K the measured time constants lie below the values, which our rate equation model and the semi-classical model predict, and show a stronger field dependence. This could be accounted for thermally assisted tunneling and contribution of light hole transport, which both reduce the effective barrier height and show a stronger field dependence. Further investigations of the transport times are currently in progress by changing the thickness of the InP barrier and the barrier height of the quaternary material.
{"title":"Carrier transport in an InGaAs(P)/InP all-optical switching structure","authors":"C. Knorr, U. Wilhelm, D. Ottenwlilder, E. Scholz, A. Hangleiter","doi":"10.1109/ICIPRM.1996.492029","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492029","url":null,"abstract":"We presented a specially designed SCMQW structure, where hole transport is controlled by an additional large heterobarrier. This barrier gives access to steady state escape times by measuring the charge carrier induced field change in the MQW region. We get a minimum value for the hole extraction time over the barrier of several at 77 K. At a temperature of 200 K the measured time constants lie below the values, which our rate equation model and the semi-classical model predict, and show a stronger field dependence. This could be accounted for thermally assisted tunneling and contribution of light hole transport, which both reduce the effective barrier height and show a stronger field dependence. Further investigations of the transport times are currently in progress by changing the thickness of the InP barrier and the barrier height of the quaternary material.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127424788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492258
L. Ren, M. Py, J. Spicher, H. Buehlmann, H. Beck, M. Ilegems
Low-frequency drain-current noise in lattice-matched InAlAs/InGaAs/InP HEMTs has been studied at low drain bias in a temperature range of 77 to 350 K. The 1/f noise was found to be strongly dependent on gate-source bias, which can be interpreted by taking into account the role played by the series resistance. The Hooge's parameters for 1/f noise were extracted to be 1.5/spl times/10/sup -3/ for the InGaAs channel and 7/spl times/10/sup -4/ for the series resistance. Noise spectra analysis reveals two generation-recombination (G-R) noise components, which correspond to two traps with activation energies of 0.56 eV and 0.11 eV. Considering their different behavior upon gate-source bias and the DLTS results, we conclude that the 0.11 eV trap is located in the channel region while the 0.56 eV trap is most likely located in the Schottky barrier layer.
{"title":"Low-frequency noise in lattice-matched In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InP HEMTs","authors":"L. Ren, M. Py, J. Spicher, H. Buehlmann, H. Beck, M. Ilegems","doi":"10.1109/ICIPRM.1996.492258","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492258","url":null,"abstract":"Low-frequency drain-current noise in lattice-matched InAlAs/InGaAs/InP HEMTs has been studied at low drain bias in a temperature range of 77 to 350 K. The 1/f noise was found to be strongly dependent on gate-source bias, which can be interpreted by taking into account the role played by the series resistance. The Hooge's parameters for 1/f noise were extracted to be 1.5/spl times/10/sup -3/ for the InGaAs channel and 7/spl times/10/sup -4/ for the series resistance. Noise spectra analysis reveals two generation-recombination (G-R) noise components, which correspond to two traps with activation energies of 0.56 eV and 0.11 eV. Considering their different behavior upon gate-source bias and the DLTS results, we conclude that the 0.11 eV trap is located in the channel region while the 0.56 eV trap is most likely located in the Schottky barrier layer.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125584021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492332
O. Schuler, H. Fourre, R. Fauquembergue, A. Cappy
High performance in the millimeter wave range have been already reported for InAlAs/InGaAs High Electron Mobility Transistors (HEMTs) on InP substrates. High frequency performance is essentially limited by two elements : the feedback capacitance Cgd and the gate resistance Rg. On the first hand, many different gate geometries such as T-gate or /spl Gamma/-gate have been developed to improve Rg. On the other hand, for operation stability and better reliability of MMIC's using HEMTs, devices must be coated with a dielectric layer. However, the passivation layer increases the parasitic capacitances and then, decreases the device performance. In this paper, we present a study of the influence of parasitic capacitances such as feedback capacitance on the high-frequency characteristics of InP-based HEMTs with T-gate supported by a Si/sub 3/N/sub 4/ passivation layer. Extraction of S-parameters from 1 to 40 GHz, and noise measurement at 94 GHz have been performed on 0.12-0.15 /spl mu/m gate length samples. First, we investigate the consequence of the cap layer underetch on the parasitic capacitances. Secondly, the effect of the dielectric coating layer under the top of the T-gate is examined.
{"title":"Influence of parasitic capacitances on the performance of passivated InAlAs/InGaAs HEMTs in the millimeter wave range","authors":"O. Schuler, H. Fourre, R. Fauquembergue, A. Cappy","doi":"10.1109/ICIPRM.1996.492332","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492332","url":null,"abstract":"High performance in the millimeter wave range have been already reported for InAlAs/InGaAs High Electron Mobility Transistors (HEMTs) on InP substrates. High frequency performance is essentially limited by two elements : the feedback capacitance Cgd and the gate resistance Rg. On the first hand, many different gate geometries such as T-gate or /spl Gamma/-gate have been developed to improve Rg. On the other hand, for operation stability and better reliability of MMIC's using HEMTs, devices must be coated with a dielectric layer. However, the passivation layer increases the parasitic capacitances and then, decreases the device performance. In this paper, we present a study of the influence of parasitic capacitances such as feedback capacitance on the high-frequency characteristics of InP-based HEMTs with T-gate supported by a Si/sub 3/N/sub 4/ passivation layer. Extraction of S-parameters from 1 to 40 GHz, and noise measurement at 94 GHz have been performed on 0.12-0.15 /spl mu/m gate length samples. First, we investigate the consequence of the cap layer underetch on the parasitic capacitances. Secondly, the effect of the dielectric coating layer under the top of the T-gate is examined.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126223067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492050
P. Hao, L.C. Wang, J. Chang, J. Kuo
Si/Pd-based contact schemes based on the solid phase regrowth (SPR) principle have been developed to form low resistance ohmic contacts to n type Al/sub 0.5/In/sub 0.5/P and Ga/sub 0.5/In/sub 0.5/P lattice matched to GaAs grown by gas source molecular beam epitaxy (GSMBE). Lowest contact resistivities of /spl sim/6/spl times/10/sup -6/ /spl Omega/-cm/sup 2/ and /spl sim/1/spl times/10/sup -5/ /spl Omega/-cm/sup 2/ have been obtained on Al/sub 0.5/In/sub 0.5/P and Ga/sub 0.5/In/sub 0.5/P respectively (both doped to /spl sim/2/spl times/10/sup 18/ cm/sup -3/). In this article, the electrical properties and the ohmic contact formation model of the Si/Pd-based contacts to n-Al/sub 0.5/In/sub 0.5/P and n-Ga/sub 0.5/In/sub 0.5/P are presented.
{"title":"Shallow Si/Pd-based ohmic contacts to n type Al/sub 0.5/In/sub 0.5/P and Ga/sub 0.5/In/sub 0.5/P","authors":"P. Hao, L.C. Wang, J. Chang, J. Kuo","doi":"10.1109/ICIPRM.1996.492050","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492050","url":null,"abstract":"Si/Pd-based contact schemes based on the solid phase regrowth (SPR) principle have been developed to form low resistance ohmic contacts to n type Al/sub 0.5/In/sub 0.5/P and Ga/sub 0.5/In/sub 0.5/P lattice matched to GaAs grown by gas source molecular beam epitaxy (GSMBE). Lowest contact resistivities of /spl sim/6/spl times/10/sup -6/ /spl Omega/-cm/sup 2/ and /spl sim/1/spl times/10/sup -5/ /spl Omega/-cm/sup 2/ have been obtained on Al/sub 0.5/In/sub 0.5/P and Ga/sub 0.5/In/sub 0.5/P respectively (both doped to /spl sim/2/spl times/10/sup 18/ cm/sup -3/). In this article, the electrical properties and the ohmic contact formation model of the Si/Pd-based contacts to n-Al/sub 0.5/In/sub 0.5/P and n-Ga/sub 0.5/In/sub 0.5/P are presented.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128128605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492262
R. Zengerle, B. Hubner, C. Gréus, H. Burkhard, R. Ries, H. Janning, E. Kuphal
The RF-modulation emission characteristics of a MQW DFB laser monolithically integrated with a laterally tapered spot-size transformer on InGaAsP-InP were investigated and key results were presented. Our experiments confirm the attractivity of this integration concept for low cost laser components in optical transmission systems.
{"title":"Modulation characteristics of a DFB-laser with integrated spot-size converter for efficient laser fibre coupling","authors":"R. Zengerle, B. Hubner, C. Gréus, H. Burkhard, R. Ries, H. Janning, E. Kuphal","doi":"10.1109/ICIPRM.1996.492262","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492262","url":null,"abstract":"The RF-modulation emission characteristics of a MQW DFB laser monolithically integrated with a laterally tapered spot-size transformer on InGaAsP-InP were investigated and key results were presented. Our experiments confirm the attractivity of this integration concept for low cost laser components in optical transmission systems.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126355915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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