Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492335
B. Georgescu, F. Ducroquet, P. Girard, G. Guillot, K. Nait-Zerrad, G. Post
Low frequency trapping effects in InP doped channel HFETs were investigated by current transient spectroscopy and conduction frequency dispersion measurements. By varying bias and temperatures, information on trap parameters and spatial localization can be obtained. Main dispersion effects ate attributed to InP growth related defects in the channel or at the channel/buffer interface.
{"title":"Correlation between trap characterization by drain conductance dispersion and current transient spectroscopy in InAlAs/InP HFET","authors":"B. Georgescu, F. Ducroquet, P. Girard, G. Guillot, K. Nait-Zerrad, G. Post","doi":"10.1109/ICIPRM.1996.492335","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492335","url":null,"abstract":"Low frequency trapping effects in InP doped channel HFETs were investigated by current transient spectroscopy and conduction frequency dispersion measurements. By varying bias and temperatures, information on trap parameters and spatial localization can be obtained. Main dispersion effects ate attributed to InP growth related defects in the channel or at the channel/buffer interface.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117067179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492312
B. Sermage, J. Benchimol, J. Michel, F. Alexandre, P. Launay, D. Caffin
Carrier lifetime has been measured in carbon doped CBE grown In/sub 0.53/Ga/sub 0.47/As by time resolved luminescence with 3 ps resolution. For doping levels between 3.10/sup 18/ cm/sup -3/ and 7.10/sup 19/ cm/sup -3/, the lifetime varies between 400 and 4 picoseconds. This strong decrease is attributed to Auger recombination and induces a limitation on the DC current gain and the base sheet resistance in heterojunction bipolar transistors.
{"title":"Carrier lifetime in carbon doped In/sub 0.53/Ga/sub 0.47/As","authors":"B. Sermage, J. Benchimol, J. Michel, F. Alexandre, P. Launay, D. Caffin","doi":"10.1109/ICIPRM.1996.492312","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492312","url":null,"abstract":"Carrier lifetime has been measured in carbon doped CBE grown In/sub 0.53/Ga/sub 0.47/As by time resolved luminescence with 3 ps resolution. For doping levels between 3.10/sup 18/ cm/sup -3/ and 7.10/sup 19/ cm/sup -3/, the lifetime varies between 400 and 4 picoseconds. This strong decrease is attributed to Auger recombination and induces a limitation on the DC current gain and the base sheet resistance in heterojunction bipolar transistors.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121886355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.491975
M. Horstmann, M. Hollfelder, K. Schimpf, R. Lehmann, M. Marso, P. Kordos
A novel monolithic integrated photoreceiver for 10 Gbit/s long-wavelength optoelectronic transmission systems is presented. The photoreceiver consists of an MSM photodetector and a HEMT amplifier, prepared on an identical InGaAs/InP 2DEG layer structure. Design considerations, preparation procedure and optoelectronic properties of the photoreceiver under 1.3 /spl mu/m wavelength illumination are presented. The MSM photodetectors exhibit a 3 dB bandwidth of 16 GHz and the HEMT amplifiers have the cut-off frequency f/sub T/ of 45 GHz and f/sub max/, of 85 GHz. A bandwidth of 16 GHz can be achieved on optimized integrated photoreceivers.
{"title":"Simple realization of a monolithic integrated photoreceiver for 10 Gbit/s using an InP/InGaAs heterostructure","authors":"M. Horstmann, M. Hollfelder, K. Schimpf, R. Lehmann, M. Marso, P. Kordos","doi":"10.1109/ICIPRM.1996.491975","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491975","url":null,"abstract":"A novel monolithic integrated photoreceiver for 10 Gbit/s long-wavelength optoelectronic transmission systems is presented. The photoreceiver consists of an MSM photodetector and a HEMT amplifier, prepared on an identical InGaAs/InP 2DEG layer structure. Design considerations, preparation procedure and optoelectronic properties of the photoreceiver under 1.3 /spl mu/m wavelength illumination are presented. The MSM photodetectors exhibit a 3 dB bandwidth of 16 GHz and the HEMT amplifiers have the cut-off frequency f/sub T/ of 45 GHz and f/sub max/, of 85 GHz. A bandwidth of 16 GHz can be achieved on optimized integrated photoreceivers.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124827560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492036
R. Fornari, A. Zappettini, E. Gombia, R. Mosca, M. Curti, K. Chearkaoui, G. Manakchi
As-grown Fe-doped semiconducting (SC) InP samples (residual carrier concentration /spl les/10/sup 15/ cm/sup -3/, estimated iron concentration 6-8/spl times/10/sup 15/ cm/sup -3/) were seen to convert to semi-insulating (SI), with high resistivity and good mobility, when annealed under appropriate conditions. This fact is very interesting since it gives the opportunity of obtaining semi-insulating InP with low Fe content. In this paper we report the annealing parameters together with the results of an extensive characterization (by Hall effect, C-V, IR absorption and PICTS) of the treated samples. The results suggest that the conductivity drop is related to a considerable loss of shallow donors.
{"title":"Semi-insulating behaviour of n-type lightly Fe-doped InP wafers after thermal annealing","authors":"R. Fornari, A. Zappettini, E. Gombia, R. Mosca, M. Curti, K. Chearkaoui, G. Manakchi","doi":"10.1109/ICIPRM.1996.492036","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492036","url":null,"abstract":"As-grown Fe-doped semiconducting (SC) InP samples (residual carrier concentration /spl les/10/sup 15/ cm/sup -3/, estimated iron concentration 6-8/spl times/10/sup 15/ cm/sup -3/) were seen to convert to semi-insulating (SI), with high resistivity and good mobility, when annealed under appropriate conditions. This fact is very interesting since it gives the opportunity of obtaining semi-insulating InP with low Fe content. In this paper we report the annealing parameters together with the results of an extensive characterization (by Hall effect, C-V, IR absorption and PICTS) of the treated samples. The results suggest that the conductivity drop is related to a considerable loss of shallow donors.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"04 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127345620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.491979
M. Schilling, P. Wiedemann, K. Daub, W. Idler, M. Klenk, U. Koerner, E. Lach, G. Laube, K. Wunstel
Compact monolithic wavelength converters based on integrated three-port Mach-Zehnder interferometer (MZI) structure are realized for the first time with strongly reduced polarization sensitivity due to incorporation of tensile strained MQW active layers. The (InGaAs/InGaAsP) MQW structures are grown by LP MOVPE on full 2 inch n-InP substrates. By fine adjustment of tensile strain (varied between -0.3 and -0.45%) the optimum conditions to achieve equalized gain for TE and TM modes have been identified in accordance with modelling results. Assessment of static and dynamic all-optical wavelength conversion performance has been done for the MZI devices. Best results for TE/TM ratio are obtained for MZI wavelength converters with -0.34% tensile strain. A TE/TM ratio /spl les/1 dB is achieved within a 20 nm wavelength conversion window. Penalty-free 2.5 Gbit/s polarization-insensitive all-optical wavelength conversion including extinction ratio improvement is demonstrated.
{"title":"Polarization insensitive interferometric wavelength converter with tensile strained InGaAs/InGaAsP MQW structure","authors":"M. Schilling, P. Wiedemann, K. Daub, W. Idler, M. Klenk, U. Koerner, E. Lach, G. Laube, K. Wunstel","doi":"10.1109/ICIPRM.1996.491979","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491979","url":null,"abstract":"Compact monolithic wavelength converters based on integrated three-port Mach-Zehnder interferometer (MZI) structure are realized for the first time with strongly reduced polarization sensitivity due to incorporation of tensile strained MQW active layers. The (InGaAs/InGaAsP) MQW structures are grown by LP MOVPE on full 2 inch n-InP substrates. By fine adjustment of tensile strain (varied between -0.3 and -0.45%) the optimum conditions to achieve equalized gain for TE and TM modes have been identified in accordance with modelling results. Assessment of static and dynamic all-optical wavelength conversion performance has been done for the MZI devices. Best results for TE/TM ratio are obtained for MZI wavelength converters with -0.34% tensile strain. A TE/TM ratio /spl les/1 dB is achieved within a 20 nm wavelength conversion window. Penalty-free 2.5 Gbit/s polarization-insensitive all-optical wavelength conversion including extinction ratio improvement is demonstrated.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130703516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492275
V. Hurm, W. Benz, M. Berroth, W. Bronner, T. Fink, M. Haupt, K. Kohler, M. Ludwig, B. Raynor, J. Rosenzweig
The first 10 Gbit/s 1.3-1.55 /spl mu/m wavelength monolithic integrated photoreceiver grown on GaAs substrate has been fabricated using a 0.3 /spl mu/m gate length AlGaAs-GaAs HEMT process. At a wavelength of 1.3 /spl mu/m the integrated InGaAs MSM photodiode has a DC responsivity of 0.34 A/W. The photoreceiver bandwidth is 7.1 GHz and its sensitivity is better than -14.7 dBm (BER=10/sup -9/).
采用0.3 μ l μ l μ m栅长AlGaAs-GaAs HEMT工艺，在GaAs衬底上制备了首个10 Gbit/s波长1.3-1.55 μ l /m的单片集成光接收器。在1.3 /spl mu/m波长下，集成的InGaAs MSM光电二极管的直流响应率为0.34 a /W。光电接收机带宽为7.1 GHz，灵敏度优于-14.7 dBm (BER=10/sup -9/)。
{"title":"10 Gbit/s long wavelength monolithic integrated optoelectronic receiver grown on GaAs","authors":"V. Hurm, W. Benz, M. Berroth, W. Bronner, T. Fink, M. Haupt, K. Kohler, M. Ludwig, B. Raynor, J. Rosenzweig","doi":"10.1109/ICIPRM.1996.492275","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492275","url":null,"abstract":"The first 10 Gbit/s 1.3-1.55 /spl mu/m wavelength monolithic integrated photoreceiver grown on GaAs substrate has been fabricated using a 0.3 /spl mu/m gate length AlGaAs-GaAs HEMT process. At a wavelength of 1.3 /spl mu/m the integrated InGaAs MSM photodiode has a DC responsivity of 0.34 A/W. The photoreceiver bandwidth is 7.1 GHz and its sensitivity is better than -14.7 dBm (BER=10/sup -9/).","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130729464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.491956
U. Bhattacharya, M. Mondry, G. Hurtz, J. Guthrie, M. Rodwell, T. Liu, C. Nguyen, D. Rensch
We report greatly improved transferred-substrate Schottky collector HBTs with f/sub max/ of 100 GHz and f/sub /spl tau// of 55 GHz. Optimized devices should obtain f/sub max/ in excess of 500 GHz.
{"title":"100 GHz transferred-substrate Schottky-collector heterojunction bipolar transistor","authors":"U. Bhattacharya, M. Mondry, G. Hurtz, J. Guthrie, M. Rodwell, T. Liu, C. Nguyen, D. Rensch","doi":"10.1109/ICIPRM.1996.491956","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491956","url":null,"abstract":"We report greatly improved transferred-substrate Schottky collector HBTs with f/sub max/ of 100 GHz and f/sub /spl tau// of 55 GHz. Optimized devices should obtain f/sub max/ in excess of 500 GHz.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132877441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492323
T. Nakayama, H. Miyamoto
We observed the growth rate dependence of the critical thickness of a strained InAs layer on an InP substrate. The critical layer thickness increases, up to 10 nm, with increase in growth rate. This InAs critical layer thickness (10 nm) is twice as thick as the previously reported critical layer thickness (4 nm). From systematic experiments, we conclude that the InAs critical layer thickness dependence on growth rate is caused by a slow transition from a metastable uniform film to stable 3-dimensional islands during InAs growth.
{"title":"Dependence of critical thickness of strained InAs layer on growth rate","authors":"T. Nakayama, H. Miyamoto","doi":"10.1109/ICIPRM.1996.492323","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492323","url":null,"abstract":"We observed the growth rate dependence of the critical thickness of a strained InAs layer on an InP substrate. The critical layer thickness increases, up to 10 nm, with increase in growth rate. This InAs critical layer thickness (10 nm) is twice as thick as the previously reported critical layer thickness (4 nm). From systematic experiments, we conclude that the InAs critical layer thickness dependence on growth rate is caused by a slow transition from a metastable uniform film to stable 3-dimensional islands during InAs growth.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130904477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.491954
N. Matine, J. Pelouard, F. Pardo, R. Teissier, M. Pessa
In this paper we propose and demonstrate a novel approach for improving high frequency performance of InP-based HBTs. A new structure, the Metal Heterojunction Bipolar Transistor (MHBT) where the semiconductor is replaced by a metal in the collector layer is described. This structure not only ensures high dynamic characteristics, but also provides satisfactory static behavior. MHBT demonstrators manufactured for this study show at J/sub c/=30 KA/cm/sup 2/ a current gain cutoff frequency, f/sub T/, of 51 GHz and a maximum oscillation frequency, f/sub max/ of 160 GHz despite their thick base (150 nm) and collector (450 nm) layers. The f/sub max/ value is, for this non-optimized structure, in the range of the best values reported for InP-HBTs. In addition the effective delay time (R/sub c/C/sub BC/)/sub eff/=f/sub T//(8/spl pi/f/sub max//sup 2/) is as small as 78 fs.
{"title":"Novel approach for InP-based ultrafast HBTs","authors":"N. Matine, J. Pelouard, F. Pardo, R. Teissier, M. Pessa","doi":"10.1109/ICIPRM.1996.491954","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491954","url":null,"abstract":"In this paper we propose and demonstrate a novel approach for improving high frequency performance of InP-based HBTs. A new structure, the Metal Heterojunction Bipolar Transistor (MHBT) where the semiconductor is replaced by a metal in the collector layer is described. This structure not only ensures high dynamic characteristics, but also provides satisfactory static behavior. MHBT demonstrators manufactured for this study show at J/sub c/=30 KA/cm/sup 2/ a current gain cutoff frequency, f/sub T/, of 51 GHz and a maximum oscillation frequency, f/sub max/ of 160 GHz despite their thick base (150 nm) and collector (450 nm) layers. The f/sub max/ value is, for this non-optimized structure, in the range of the best values reported for InP-HBTs. In addition the effective delay time (R/sub c/C/sub BC/)/sub eff/=f/sub T//(8/spl pi/f/sub max//sup 2/) is as small as 78 fs.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123110784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492041
R. Rousina-Webb, S. Dzioba, M. Gatlant, L. Raine, R. Tong, C. Rolland
This paper describes the development of electron cyclotron resonance (ECR) plasma-deposited SiO/sub x/N/sub y/ single layer anti-reflecting (AR) optical coatings for III-V 10 Gbit/s, 1.56 /spl mu/m Mach-Zehnder (MZ) modulators. To minimize the effect of reflections from the cleaved facets, MZ modulators require low reflectivity (1% for TE and TM polarizations) facet coatings, which remain stable over operating life (25 years). Several reports in the literature have addressed the problem of achieving a low reflectance facet coating by monitoring; the reflectance of, for example, one laser at a time. However, for production quantities, the uniformity, stability, run-to-run reproducibility and device performance across several bars held in a coating fixture must be optimized. This places constraints on the deposition method and fixturing. E-beam evaporated coatings tend to produce films which have poor stability (i.e. drift in reflectance); deposition at high substrate temperatures reduces this effect but can also result in incongruent loss of the group V element and give rise to absorption and/or scattering at the facet. In this paper we report of the fabrication and characterization of SiO/sub x/N/sub y/ films deposited by ECR CVD which provides low ion energy (/spl sim/<25 eV) bombardment, low plasma damage and low deposition temperature to produce high quality, stable AR facet coatings.
{"title":"ECR CVD of silicon oxynitride films for antireflection coating of 10 Gbit/s, 1.56 /spl mu/m multi-quantum well InP/InGaAsP Mach-Zehnder modulators","authors":"R. Rousina-Webb, S. Dzioba, M. Gatlant, L. Raine, R. Tong, C. Rolland","doi":"10.1109/ICIPRM.1996.492041","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492041","url":null,"abstract":"This paper describes the development of electron cyclotron resonance (ECR) plasma-deposited SiO/sub x/N/sub y/ single layer anti-reflecting (AR) optical coatings for III-V 10 Gbit/s, 1.56 /spl mu/m Mach-Zehnder (MZ) modulators. To minimize the effect of reflections from the cleaved facets, MZ modulators require low reflectivity (1% for TE and TM polarizations) facet coatings, which remain stable over operating life (25 years). Several reports in the literature have addressed the problem of achieving a low reflectance facet coating by monitoring; the reflectance of, for example, one laser at a time. However, for production quantities, the uniformity, stability, run-to-run reproducibility and device performance across several bars held in a coating fixture must be optimized. This places constraints on the deposition method and fixturing. E-beam evaporated coatings tend to produce films which have poor stability (i.e. drift in reflectance); deposition at high substrate temperatures reduces this effect but can also result in incongruent loss of the group V element and give rise to absorption and/or scattering at the facet. In this paper we report of the fabrication and characterization of SiO/sub x/N/sub y/ films deposited by ECR CVD which provides low ion energy (/spl sim/<25 eV) bombardment, low plasma damage and low deposition temperature to produce high quality, stable AR facet coatings.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121823884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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