Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492408
P. Thijs, T. van Dongen, J. Binsma, E. J. Jansen
Today's fibre-optic communication system applications require semiconductor lasers with low threshold current and operating, preferably uncooled, over a wide temperature range at high speed. For the fabrication of 1.3-1.5 /spl mu/m wavelength quantum well laser diodes InGaAs(P)/InGaAsP and (Al)GaInAs/Al(Ga)InAs have been studied. Despite the presence of the more difficult to handle aluminium, the latter material system is mainly of interest because of its larger conduction band offset: /spl Delta/E/sub c/=0.72 /spl Delta/E/sub g/ against /spl Delta/E/sub c/=0.35 /spl Delta/E/sub g/ in InGaAs/InGaAsP. In combination with quantum wells deliberately grown in a state of strain, this results in higher characteristic temperature T/sub 0/, leading to lower threshold current and higher output power, especially at elevated temperatures. Moreover, both the hole transport within the active layer and the differential gain are enhanced, leading to high speed and low chirp characteristics. However, in practical Al-containing telecommunication devices these characteristics have not been optimally exploited so far. The most common device structure for these lasers is of the ridge waveguide type, which has a higher threshold current, a more elliptical and less stable output beam, and shows more pronounced ringing under current modulation than buried heterostructure (BH) devices. In this paper, we report low-threshold and high-power Fabry-Perot (FP) and low-threshold distributed feedback(DFB) 1.5 /spl mu/m strained-layer InGaAs/AlGaInAs BH lasers with semi-insulating InP current-blocking layers completely grown by low-pressure organometallic vapour phase epitaxy (LP-OMVPE). For the first time, evidence for the reliable operation of these devices is presented.
{"title":"High performance buried heterostructure /spl lambda/=1.5 /spl mu/m InGaAs/AlGaInAs strained-layer quantum well laser diodes","authors":"P. Thijs, T. van Dongen, J. Binsma, E. J. Jansen","doi":"10.1109/ICIPRM.1996.492408","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492408","url":null,"abstract":"Today's fibre-optic communication system applications require semiconductor lasers with low threshold current and operating, preferably uncooled, over a wide temperature range at high speed. For the fabrication of 1.3-1.5 /spl mu/m wavelength quantum well laser diodes InGaAs(P)/InGaAsP and (Al)GaInAs/Al(Ga)InAs have been studied. Despite the presence of the more difficult to handle aluminium, the latter material system is mainly of interest because of its larger conduction band offset: /spl Delta/E/sub c/=0.72 /spl Delta/E/sub g/ against /spl Delta/E/sub c/=0.35 /spl Delta/E/sub g/ in InGaAs/InGaAsP. In combination with quantum wells deliberately grown in a state of strain, this results in higher characteristic temperature T/sub 0/, leading to lower threshold current and higher output power, especially at elevated temperatures. Moreover, both the hole transport within the active layer and the differential gain are enhanced, leading to high speed and low chirp characteristics. However, in practical Al-containing telecommunication devices these characteristics have not been optimally exploited so far. The most common device structure for these lasers is of the ridge waveguide type, which has a higher threshold current, a more elliptical and less stable output beam, and shows more pronounced ringing under current modulation than buried heterostructure (BH) devices. In this paper, we report low-threshold and high-power Fabry-Perot (FP) and low-threshold distributed feedback(DFB) 1.5 /spl mu/m strained-layer InGaAs/AlGaInAs BH lasers with semi-insulating InP current-blocking layers completely grown by low-pressure organometallic vapour phase epitaxy (LP-OMVPE). For the first time, evidence for the reliable operation of these devices is presented.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"40 7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124933795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.491920
S. Arai
A great success in semiconductor lasers has been brought by developments in epitaxial growth technology to realize high quality quantum-well structures of precisely controlled thickness and compositions. Further high-performance characteristics, such as low-threshold current and high-efficiency operations, can be attained by adopting quantum-wire and quantum-box structures. To meet this objective, very low-damage fabrication technology of ultra-fine structures with high accuracy is required, and various fabrication methods have been investigated. Latest results on the fabrication processes and lasing properties of quantum-wire and quantum-box lasers are reviewed.
{"title":"Quantum-wires and -boxes based on GaInAsP/InP and related materials for advanced semiconductor lasers","authors":"S. Arai","doi":"10.1109/ICIPRM.1996.491920","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491920","url":null,"abstract":"A great success in semiconductor lasers has been brought by developments in epitaxial growth technology to realize high quality quantum-well structures of precisely controlled thickness and compositions. Further high-performance characteristics, such as low-threshold current and high-efficiency operations, can be attained by adopting quantum-wire and quantum-box structures. To meet this objective, very low-damage fabrication technology of ultra-fine structures with high accuracy is required, and various fabrication methods have been investigated. Latest results on the fabrication processes and lasing properties of quantum-wire and quantum-box lasers are reviewed.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121597280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.491973
H. Wehmann, A. Bartels, R. Klockenbrink, G.-P. Tang, E. Peiner, A. Schlachetzki, L. Malacký
In this contribution the fabrication of lattice-mismatched InGaAs metalsemiconductor-metal (MSM) photodetectors on [001]Si substrates by metal-organic vapour-phase epitaxy (MOVPE) is described. Their characteristics are compared to lattice-matched devices on InP as well as to literature data. We found that the main differences of the detector performances on Si and InP are not related with the above mentioned defects but with an increased background doping concentration associated with the incorporation of Si into the growing layers.
{"title":"Properties of InGaAs-MSM-photodetectors on Si","authors":"H. Wehmann, A. Bartels, R. Klockenbrink, G.-P. Tang, E. Peiner, A. Schlachetzki, L. Malacký","doi":"10.1109/ICIPRM.1996.491973","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491973","url":null,"abstract":"In this contribution the fabrication of lattice-mismatched InGaAs metalsemiconductor-metal (MSM) photodetectors on [001]Si substrates by metal-organic vapour-phase epitaxy (MOVPE) is described. Their characteristics are compared to lattice-matched devices on InP as well as to literature data. We found that the main differences of the detector performances on Si and InP are not related with the above mentioned defects but with an increased background doping concentration associated with the incorporation of Si into the growing layers.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125181357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.491974
M. Horstmann, M. Hollfelder, J. Muttersbach, K. Schimpf, M. Marso, P. Kordos, H. Luth
The optoelectronic properties of a novel metal-semiconductor-metal (MSM) photodetector (PD) are investigated. The MSM PD uses the same layer structure and processing procedure as needed for the fabrication of high electron mobility transistors (HEMT), offering new possibilities of the realization of monolithic integrated photoreceivers. The measured 3dB bandwidth of 16 GHz at 1.3 /spl mu/m wavelength for devices with 0.5 /spl mu/m finger-spacing and -width is, to the authors' knowledge, the widest reported bandwidth on InGaAs MSM-PDs up to now.
{"title":"Frequency response of InP/InGaAs MSM photodetector with current transport along 2 deg","authors":"M. Horstmann, M. Hollfelder, J. Muttersbach, K. Schimpf, M. Marso, P. Kordos, H. Luth","doi":"10.1109/ICIPRM.1996.491974","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491974","url":null,"abstract":"The optoelectronic properties of a novel metal-semiconductor-metal (MSM) photodetector (PD) are investigated. The MSM PD uses the same layer structure and processing procedure as needed for the fabrication of high electron mobility transistors (HEMT), offering new possibilities of the realization of monolithic integrated photoreceivers. The measured 3dB bandwidth of 16 GHz at 1.3 /spl mu/m wavelength for devices with 0.5 /spl mu/m finger-spacing and -width is, to the authors' knowledge, the widest reported bandwidth on InGaAs MSM-PDs up to now.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125104046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.491968
Jen-Wei Pan, J. Chyi
The temperature dependence of the differential gain, carrier density, and threshold current density for 1.3 /spl mu/m AlGaInAs/lnP multiple quantum-well lasers has been theoretically studied using the optical gain calculation from 250 K to 380 K. The Auger current accounts for more than 50% of the total current. The leakage current exhibits the highest temperature sensitivity and becomes an essential part of the total current at high temperature. The calculated characteristic temperatures of the transparency and threshold current densities are 106 K and 84 K, respectively, which agree well with the reported experimental results.
{"title":"Analysis of the temperature dependence of 1.3 /spl mu/m AlGaInAs/InP multiple quantum-well lasers","authors":"Jen-Wei Pan, J. Chyi","doi":"10.1109/ICIPRM.1996.491968","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491968","url":null,"abstract":"The temperature dependence of the differential gain, carrier density, and threshold current density for 1.3 /spl mu/m AlGaInAs/lnP multiple quantum-well lasers has been theoretically studied using the optical gain calculation from 250 K to 380 K. The Auger current accounts for more than 50% of the total current. The leakage current exhibits the highest temperature sensitivity and becomes an essential part of the total current at high temperature. The calculated characteristic temperatures of the transparency and threshold current densities are 106 K and 84 K, respectively, which agree well with the reported experimental results.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122391100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492279
W. Kowalsky, D. Ammermann, A. Böhler, S. Dirr
Organic light emitting diodes with a complex multilayer structure have been successfully fabricated for bright light emission in the entire visible spectral region. The CIE coordinates of the blue, green, and red emitting electroluminescent devices are plotted in the chromaticity diagram. Double heterostructure organic LEDs with separate hole injection and transport layers allow to achieve low turn-on voltages of only about 4 V and a significantly increased quantum efficiency.
{"title":"Organic light emitting diodes","authors":"W. Kowalsky, D. Ammermann, A. Böhler, S. Dirr","doi":"10.1109/ICIPRM.1996.492279","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492279","url":null,"abstract":"Organic light emitting diodes with a complex multilayer structure have been successfully fabricated for bright light emission in the entire visible spectral region. The CIE coordinates of the blue, green, and red emitting electroluminescent devices are plotted in the chromaticity diagram. Double heterostructure organic LEDs with separate hole injection and transport layers allow to achieve low turn-on voltages of only about 4 V and a significantly increased quantum efficiency.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131499849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492278
R. Kyburz, W. Vogt, R. Krahenbuhl, M. Bachmann, T. Brenner, H. Melchior
An InP/InGaAsP optical space switch matrix with 5 polarization-insensitive Mach-Zehnder interferometers in 3 stages and with 6 inputs and 6 outputs for access network applications is reported. The switches, specially designed for a low polarization dependence and low insertion losses, typically show on-state polarization-sensitivities of less than 0.5 dB, nearly identical switching voltages of around 7 V for TE and TM polarization, insertion losses below 11 dB, on-off ratios above 15 dB and high-speed switching capabilities up to 3 Gb/s.
{"title":"Polarization-insensitive high-speed InP/InGaAsP access node space switch matrix for bidirectional optical ATM networks","authors":"R. Kyburz, W. Vogt, R. Krahenbuhl, M. Bachmann, T. Brenner, H. Melchior","doi":"10.1109/ICIPRM.1996.492278","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492278","url":null,"abstract":"An InP/InGaAsP optical space switch matrix with 5 polarization-insensitive Mach-Zehnder interferometers in 3 stages and with 6 inputs and 6 outputs for access network applications is reported. The switches, specially designed for a low polarization dependence and low insertion losses, typically show on-state polarization-sensitivities of less than 0.5 dB, nearly identical switching voltages of around 7 V for TE and TM polarization, insertion losses below 11 dB, on-off ratios above 15 dB and high-speed switching capabilities up to 3 Gb/s.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132711753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.491951
J. Peyre, E. Gaumont, C. Labourie, A. Pinquier, P. Jarry, J. Gentner
Improved dry etching techniques are crucial for the fabrication of state-of-the-art photonic devices on indium phosphide. One important area is monolithic integration of advanced functions combining ridge and butt-coupling technologies. Reactive ion etching (RIE) of InP-based materials at room temperature with hydrocarbon chemistry is well recognized as an efficient tool, especially for controlling fine pattern etching and anisotropy. Reactive ion beam etching has been studied as an alternative to RTE for which ion energy and current density cannot be controlled independently. This new tool is mainly expected to lead to better etch uniformity on 2-inch InP wafers, to a better control of sidewall angles and a reduction in etched-induced damage. It is currently used with high reproducibility for laser fabrication with methane, hydrogen and argon. In this paper we present process improvements based on nitrogen introduction to reduce polymer deposition. We then show some applications to advanced photonic devices.
{"title":"CH/sub 4//H/sub 2//N/sub 2/ reactive ion beam etching for InP based photonic devices","authors":"J. Peyre, E. Gaumont, C. Labourie, A. Pinquier, P. Jarry, J. Gentner","doi":"10.1109/ICIPRM.1996.491951","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491951","url":null,"abstract":"Improved dry etching techniques are crucial for the fabrication of state-of-the-art photonic devices on indium phosphide. One important area is monolithic integration of advanced functions combining ridge and butt-coupling technologies. Reactive ion etching (RIE) of InP-based materials at room temperature with hydrocarbon chemistry is well recognized as an efficient tool, especially for controlling fine pattern etching and anisotropy. Reactive ion beam etching has been studied as an alternative to RTE for which ion energy and current density cannot be controlled independently. This new tool is mainly expected to lead to better etch uniformity on 2-inch InP wafers, to a better control of sidewall angles and a reduction in etched-induced damage. It is currently used with high reproducibility for laser fabrication with methane, hydrogen and argon. In this paper we present process improvements based on nitrogen introduction to reduce polymer deposition. We then show some applications to advanced photonic devices.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132270453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.491958
N. Putz, D. Adams, C. Rolland, R. Moore, R. Mallard
The monolithic integration of lasers and modulators is an attractive approach for the manufacture of compact, low-chirp light sources with low packaging costs for high bit rate (10 Gb/s) long haul fiber optic transmission systems. In this presentation we describe the fabrication of an InGaAsP-InP based Mach/Zehnder phase modulator with a gain-coupled DFB QW laser.
{"title":"Fabrication of an InP/GaInAsP based integrated gain-coupled DFB laser/M-Z phase modulator for 10 Gb/sec fiber optic transmission","authors":"N. Putz, D. Adams, C. Rolland, R. Moore, R. Mallard","doi":"10.1109/ICIPRM.1996.491958","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491958","url":null,"abstract":"The monolithic integration of lasers and modulators is an attractive approach for the manufacture of compact, low-chirp light sources with low packaging costs for high bit rate (10 Gb/s) long haul fiber optic transmission systems. In this presentation we describe the fabrication of an InGaAsP-InP based Mach/Zehnder phase modulator with a gain-coupled DFB QW laser.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133114264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492301
Jin-Shung Liu, Tsuen-Lin Lee, Hao-Hsiung Lin
A GaInAsP GSMBE growth model considering an intermediate state is presented. This model is very simple and needs only two fitting parameters, k/sub In/ and k/sub Ga/, which are determined from the experimental results of In/sub 1-x/Ga/sub x/As/sub y/P/sub 1-y/ on InP (0
{"title":"An unified GSMBE growth model for GaInAsP on InP and GaAs","authors":"Jin-Shung Liu, Tsuen-Lin Lee, Hao-Hsiung Lin","doi":"10.1109/ICIPRM.1996.492301","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492301","url":null,"abstract":"A GaInAsP GSMBE growth model considering an intermediate state is presented. This model is very simple and needs only two fitting parameters, k/sub In/ and k/sub Ga/, which are determined from the experimental results of In/sub 1-x/Ga/sub x/As/sub y/P/sub 1-y/ on InP (0<x<0.47 and 0<y<1) and In/sub 1-x/Ga/sub x/As/sub y/P/sub 1-y/ on GaAs (0.51<x<1 and 0<y<1). At a growth temperature of 480/spl deg/C, they are 27.5 and 2.75, respectively. Their temperature dependency, i.e., activation energies are -27.5 and -457 meV, respectively. The average lattice mismatch difference between the theoretical and experimental results of grown epilayers is less than 7/spl times/10/sup -4/.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"68 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114024061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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