Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282746
N. Jiang, Z. Ma, L.B. Li
The effects of proton radiation on the RF power performance of multi-finger RF MOSFETs are, for the first time, reported in this work. Besides DC and small-signal AC characterizations, on-wafer large-signal high-power performance characteristics were also measured for multi-finger RF n-MOSFETs. The comparison between pre- and post-radiation shows that the power performance of RF MOSFETs exhibits excellent tolerance to high-fluence proton irradiation, revealing the potential of RF MOSFETs in the applications of power amplifiers for wireless application under severe radiation environment even without any intentional radiation hardening
{"title":"Operation of RF Power MOSFETs under Proton Radiation","authors":"N. Jiang, Z. Ma, L.B. Li","doi":"10.1109/EMICC.2006.282746","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282746","url":null,"abstract":"The effects of proton radiation on the RF power performance of multi-finger RF MOSFETs are, for the first time, reported in this work. Besides DC and small-signal AC characterizations, on-wafer large-signal high-power performance characteristics were also measured for multi-finger RF n-MOSFETs. The comparison between pre- and post-radiation shows that the power performance of RF MOSFETs exhibits excellent tolerance to high-fluence proton irradiation, revealing the potential of RF MOSFETs in the applications of power amplifiers for wireless application under severe radiation environment even without any intentional radiation hardening","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131033928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282780
A. Sweet, R. Parrott
Traditional YIG tuned oscillators use negative resistance type circuits and large magnetic structure to produce excellent phase noise with octave plus tuning ranges, but at the expense of size and weight. This paper describes a revolutionary approach to YIG tuned oscillator design which makes use of a unique combination of a miniaturized magnetic structure, and a GaAs HBT ring oscillator circuit topology, working through a YIG tuned filter to produce octave tuning ranges in X and Ku bands with phase noise less than -125 dBC per Hz at 100 KHz. To cover S and C bands, a digital IC frequency divider is used to divide the output frequency by an integer N. Phase noise is shown to improve by a factor 20Log(N). For N=4, and F0=12 GHz, at an output frequency of 3 GHz, the measured phase noise is -137 dBC per Hz at 100 KHz
{"title":"A Miniature YIG Tuned Oscillator/Frequency Divider Achieves Octave Tuning Bandwidth with Ultra Low Phase Noise in S, C, X and Ku Bands","authors":"A. Sweet, R. Parrott","doi":"10.1109/EMICC.2006.282780","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282780","url":null,"abstract":"Traditional YIG tuned oscillators use negative resistance type circuits and large magnetic structure to produce excellent phase noise with octave plus tuning ranges, but at the expense of size and weight. This paper describes a revolutionary approach to YIG tuned oscillator design which makes use of a unique combination of a miniaturized magnetic structure, and a GaAs HBT ring oscillator circuit topology, working through a YIG tuned filter to produce octave tuning ranges in X and Ku bands with phase noise less than -125 dBC per Hz at 100 KHz. To cover S and C bands, a digital IC frequency divider is used to divide the output frequency by an integer N. Phase noise is shown to improve by a factor 20Log(N). For N=4, and F0=12 GHz, at an output frequency of 3 GHz, the measured phase noise is -137 dBC per Hz at 100 KHz","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124952439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282698
K. Fujii, H. Morkner
This paper describes the design and test results of a constant linearity variable gain traveling wave amplifier (VGTWA) suitable for 1 to 26.5GHz applications. The constant linearity VGTWA consists of variable feedback cascode stages, input artificial transmission line, output artificial transmission line, and a drain DC biasing network. The VGTWA was fabricated by the Avago's 0.25mum enhancement mode PHEMT process thus requires only a positive supply for bias and control. The constant linearity VGTWA exhibits 9 +/- 2 dB of maximum small signal gain between 1 and 26.5GHz frequencies with 15dB gain control. The TGTWA exhibits 14dBm minimum output 3rd order intercept point over the gain controlling range. The VGTWA also exhibits constant input/output return losses over the gain controlling conditions
{"title":"Constant Linearity Variable Gain Traveling Wave Amplifier MMIC for 1 to 26.5 GHz Applications","authors":"K. Fujii, H. Morkner","doi":"10.1109/EMICC.2006.282698","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282698","url":null,"abstract":"This paper describes the design and test results of a constant linearity variable gain traveling wave amplifier (VGTWA) suitable for 1 to 26.5GHz applications. The constant linearity VGTWA consists of variable feedback cascode stages, input artificial transmission line, output artificial transmission line, and a drain DC biasing network. The VGTWA was fabricated by the Avago's 0.25mum enhancement mode PHEMT process thus requires only a positive supply for bias and control. The constant linearity VGTWA exhibits 9 +/- 2 dB of maximum small signal gain between 1 and 26.5GHz frequencies with 15dB gain control. The TGTWA exhibits 14dBm minimum output 3rd order intercept point over the gain controlling range. The VGTWA also exhibits constant input/output return losses over the gain controlling conditions","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127235683","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282773
P. Sun, P. Upadhyaya, Le Wang, DongHo Jeong, D. Heo
This paper presents a novel high isolation and low insertion loss broadband PIN diode implemented in a standard 0.18 μm SiGe BiCMOS process for upper X-band and lower Ku band LEO satellite phased array communication systems. By optimizing distance between anode and cathode terminals, the PIN diode overcomes the limitation of the common SiGe process which do not have customized etching step to remove the N-epi layer to build a high performance vertical PIN diode. Measurement shows that the PIN diodes achieve less than 1.09 dB insertion loss and isolation between 39dB to 13.67dB over DC to 18 GHz frequency. The PIN diode performance shows great potential for development of high performance MMICs in the standard SiGe processes
{"title":"High Performance PIN Diode in 0.18-μm SiGe BiCMOS Process for Broadband Monolithic Control Circuits","authors":"P. Sun, P. Upadhyaya, Le Wang, DongHo Jeong, D. Heo","doi":"10.1109/EMICC.2006.282773","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282773","url":null,"abstract":"This paper presents a novel high isolation and low insertion loss broadband PIN diode implemented in a standard 0.18 μm SiGe BiCMOS process for upper X-band and lower Ku band LEO satellite phased array communication systems. By optimizing distance between anode and cathode terminals, the PIN diode overcomes the limitation of the common SiGe process which do not have customized etching step to remove the N-epi layer to build a high performance vertical PIN diode. Measurement shows that the PIN diodes achieve less than 1.09 dB insertion loss and isolation between 39dB to 13.67dB over DC to 18 GHz frequency. The PIN diode performance shows great potential for development of high performance MMICs in the standard SiGe processes","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121108442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282808
E. Gatard, P. Bouysse, R. Sommet, R. Quéré, J. Bureau, P. Ledieu, M. Stanislawiak, C. Tolant
A p-i-n diode model for switching and limiting applications is presented. The model allows to simulate the I-region store charge effect that governs the impedance-frequency characteristic of the diode. The model also includes recombination phenomenon in the heavily doped region and junctions effects. The diode model has been implemented in a commercial circuit simulator and validated with a good agreement by measurement results
{"title":"A Physics-Based Nonlinear Model of Microwave P-I-N Diode for CAD","authors":"E. Gatard, P. Bouysse, R. Sommet, R. Quéré, J. Bureau, P. Ledieu, M. Stanislawiak, C. Tolant","doi":"10.1109/EMICC.2006.282808","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282808","url":null,"abstract":"A p-i-n diode model for switching and limiting applications is presented. The model allows to simulate the I-region store charge effect that governs the impedance-frequency characteristic of the diode. The model also includes recombination phenomenon in the heavily doped region and junctions effects. The diode model has been implemented in a commercial circuit simulator and validated with a good agreement by measurement results","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115421171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282767
H. Forstner, A. Dehé, B. Eisener, K. Ettinger, U. Gerlach, A. Jentzsch, W. Klein, C. Lehrer
A dual band low noise and low cost wireless LAN amplifier has been fully integrated in a commercial SiGe:C bipolar technology using a highly doped silicon substrate. Outstanding low noise figures of 0.9dB at 2.4GHz and 1.45dB at 6GHz have been measured. Current consumption is 11mA in the low band and 17 mA in the high band, out off a voltage supply of 3.2V, and stabilized by a bandgap voltage reference. Low band gain is 13.5dB with an IP-1dB of -7dBm and IIP3 of +4dBm. High band gain is 20dB with an IP-1dB of -9dBm and IIP3 of +3dBm
{"title":"Ultra Low Noise Amplifier in SiGe:C Technology for 802.11a, b and g WLAN Applications","authors":"H. Forstner, A. Dehé, B. Eisener, K. Ettinger, U. Gerlach, A. Jentzsch, W. Klein, C. Lehrer","doi":"10.1109/EMICC.2006.282767","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282767","url":null,"abstract":"A dual band low noise and low cost wireless LAN amplifier has been fully integrated in a commercial SiGe:C bipolar technology using a highly doped silicon substrate. Outstanding low noise figures of 0.9dB at 2.4GHz and 1.45dB at 6GHz have been measured. Current consumption is 11mA in the low band and 17 mA in the high band, out off a voltage supply of 3.2V, and stabilized by a bandgap voltage reference. Low band gain is 13.5dB with an IP-1dB of -7dBm and IIP3 of +4dBm. High band gain is 20dB with an IP-1dB of -9dBm and IIP3 of +3dBm","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115464243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282760
J. Santiago, J. Portilla, T. Fernandez
An experimental study of nonlinear and memory effects at device and power-amplifier circuit level is presented in this paper. Effects produced by the device itself have been isolated from those caused by the introduction of particular biasing and matching networks in the power amplifier design. The influence of biasing and matching network topologies over nonlinear, short- and long-term memory behaviour of power amplifiers has been experimentally determined. The results of these measurements have been related with simulations of the impedance on the drain of the transistor for different prototypes. Finally, some guidelines for memoryless PA design can be extracted
{"title":"Nonlinear and Memory Characterization of GaAs FET Devices and FET-Based Power Amplifier Circuits","authors":"J. Santiago, J. Portilla, T. Fernandez","doi":"10.1109/EMICC.2006.282760","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282760","url":null,"abstract":"An experimental study of nonlinear and memory effects at device and power-amplifier circuit level is presented in this paper. Effects produced by the device itself have been isolated from those caused by the introduction of particular biasing and matching networks in the power amplifier design. The influence of biasing and matching network topologies over nonlinear, short- and long-term memory behaviour of power amplifiers has been experimentally determined. The results of these measurements have been related with simulations of the impedance on the drain of the transistor for different prototypes. Finally, some guidelines for memoryless PA design can be extracted","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115684922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282651
G. Torregrosa-Penalva, A. Asensio-López, A. Blanco-del-Campo, J. Fernández-González
In this work a new approach to extract the experimental fitting parameters of a microwave power FET temperature dependent DC-model is presented. The suggested procedure avoids the possibility of multiple model solutions by eliminating the measurements temperature dependence. This is accomplished by making use of isothermal measurements which in turn are obtained following a simple non-pulsed approach. The proposed technique was applied to a commercial X band MMIC FET power amplifier
{"title":"Microwave Power FET DC Model Extraction through Isothermal Non-Pulsed Measurements","authors":"G. Torregrosa-Penalva, A. Asensio-López, A. Blanco-del-Campo, J. Fernández-González","doi":"10.1109/EMICC.2006.282651","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282651","url":null,"abstract":"In this work a new approach to extract the experimental fitting parameters of a microwave power FET temperature dependent DC-model is presented. The suggested procedure avoids the possibility of multiple model solutions by eliminating the measurements temperature dependence. This is accomplished by making use of isothermal measurements which in turn are obtained following a simple non-pulsed approach. The proposed technique was applied to a commercial X band MMIC FET power amplifier","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115694026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282673
Sungwon Kim, Gyungseon Seol, Jin-churl Her, Kyung-Chul Jang, K. Seo
We have successfully demonstrated the novel HSQ based T-gate process to transfer the negative nanoscale patterns to positive patterns. This process is based on electron beam (EB) lithography, O2 plasma and BOE solution etching. Because O2 plasma etching has the high selectivity between HSQ and ZEP, HSQ patterns were exposed over the ZEP layer without any loss of pattern dimension. HSQ was then selectively etched by BOE solution. Therefore it is very simple and reproducible process in achieving nanoscale pattern of positive tone and could be useful for the fabrication of nanoscale T-gate HEMTs. The fabricated 40 nm In0.7GaAs HEMTs with the novel HSQ based T-gate process exhibit an extrinsic transconductance gm of 1.4 S/mm and a cut-off frequency fT of 370 GHz
{"title":"40nm In0.7GaAs HEMTs with Novel HSQ Based T-gate Process","authors":"Sungwon Kim, Gyungseon Seol, Jin-churl Her, Kyung-Chul Jang, K. Seo","doi":"10.1109/EMICC.2006.282673","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282673","url":null,"abstract":"We have successfully demonstrated the novel HSQ based T-gate process to transfer the negative nanoscale patterns to positive patterns. This process is based on electron beam (EB) lithography, O2 plasma and BOE solution etching. Because O2 plasma etching has the high selectivity between HSQ and ZEP, HSQ patterns were exposed over the ZEP layer without any loss of pattern dimension. HSQ was then selectively etched by BOE solution. Therefore it is very simple and reproducible process in achieving nanoscale pattern of positive tone and could be useful for the fabrication of nanoscale T-gate HEMTs. The fabricated 40 nm In0.7GaAs HEMTs with the novel HSQ based T-gate process exhibit an extrinsic transconductance gm of 1.4 S/mm and a cut-off frequency fT of 370 GHz","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114708243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282691
S. Gao, P. Butterworth, A. Sambell, C. Sanabria, H. Xu, S. Heikman, U. Mishra, R. York
This paper presents the designs and results of two high-efficiency harmonics-tuned microwave power amplifiers (PA): the first one is a 2 GHz class-F PA in monolithic integrated circuit (MMIC) by using GaN HEMT technology, and the other one is a 2.45-GHz inverse class-F PA using packaged GaAs pHEMT devices with PCB technology. In the class-F MMIC PA, field-plated GaN HEMT device is used for high-power performance. The 2.0-GHz class-F MMIC PA achieves a PAE of 50%, 38 dBm output power, and 6.2 W/mm power density. The inverse class-F PA at 2.45 GHz achieves 22.6 dBm output power and 73% PAE at 3 dB compression, and has very low cost
{"title":"Microwave Class-F and Inverse Class-F Power Amplifiers Designs using GaN Technology and GaAs pHEMT","authors":"S. Gao, P. Butterworth, A. Sambell, C. Sanabria, H. Xu, S. Heikman, U. Mishra, R. York","doi":"10.1109/EMICC.2006.282691","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282691","url":null,"abstract":"This paper presents the designs and results of two high-efficiency harmonics-tuned microwave power amplifiers (PA): the first one is a 2 GHz class-F PA in monolithic integrated circuit (MMIC) by using GaN HEMT technology, and the other one is a 2.45-GHz inverse class-F PA using packaged GaAs pHEMT devices with PCB technology. In the class-F MMIC PA, field-plated GaN HEMT device is used for high-power performance. The 2.0-GHz class-F MMIC PA achieves a PAE of 50%, 38 dBm output power, and 6.2 W/mm power density. The inverse class-F PA at 2.45 GHz achieves 22.6 dBm output power and 73% PAE at 3 dB compression, and has very low cost","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131092926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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