Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282653
Chieh-Min Lo, Shih-Fong Chao, Chiajung Chang, Huei Wang
This paper presents the design and implementation of a 5-6 GHz CMOS variable-gain low noise amplifier (VGLNA) for IEEE 802.11a WLAN application, fabricated on TSMC 0.18-mum 1P6M standard CMOS process. In this design, miniature chip size and wide gain-control range are achieved by using helix-stacked inductors and current steering technology, respectively. This VGLNA exhibits a noise figure of 3.1 dB, small signal gain of 19 dB, and IIP3 of -9 dBm while in its high gain mode. A gain of -19 dB with IIP3 of -4 dBm were measured while switching into its low gain mode. The chip size is only 0.56 mm2
{"title":"A Fully Integrated 5-6 GHz CMOS Variable-Gain LNA Using Helix-stacked Inductors","authors":"Chieh-Min Lo, Shih-Fong Chao, Chiajung Chang, Huei Wang","doi":"10.1109/EMICC.2006.282653","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282653","url":null,"abstract":"This paper presents the design and implementation of a 5-6 GHz CMOS variable-gain low noise amplifier (VGLNA) for IEEE 802.11a WLAN application, fabricated on TSMC 0.18-mum 1P6M standard CMOS process. In this design, miniature chip size and wide gain-control range are achieved by using helix-stacked inductors and current steering technology, respectively. This VGLNA exhibits a noise figure of 3.1 dB, small signal gain of 19 dB, and IIP3 of -9 dBm while in its high gain mode. A gain of -19 dB with IIP3 of -4 dBm were measured while switching into its low gain mode. The chip size is only 0.56 mm2","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114684184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282684
C. Maneux, B. Grandchamp, N. Labat, A. Touboul, M. Riet, J. Godin, P. Bove
This paper presents the first attempt to analyze low frequency noise of InP/GaAsSb/InP HBT compare with InP/InGaAs/InP HBT one. Extraction of the pre-eminent current noise source, SiB occurring at the emitter-base junction area is realized. The 1/f noise is considered as a technological figure-of-merit and Lorentzian shape noise is investigated
{"title":"LF noise analysis of InP/GaAsSb/InP and InP/InGaAs/InP HBTs","authors":"C. Maneux, B. Grandchamp, N. Labat, A. Touboul, M. Riet, J. Godin, P. Bove","doi":"10.1109/EMICC.2006.282684","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282684","url":null,"abstract":"This paper presents the first attempt to analyze low frequency noise of InP/GaAsSb/InP HBT compare with InP/InGaAs/InP HBT one. Extraction of the pre-eminent current noise source, SiB occurring at the emitter-base junction area is realized. The 1/f noise is considered as a technological figure-of-merit and Lorentzian shape noise is investigated","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114118451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282751
M. Uren, D. Hayes, R. Balmer, D. Wallis, K. Hilton, J. O. Maclean, T. Martin, C. Roff, P. McGovern, J. Benedikt, P. Tasker
GaN/AlGaN HEMTs can suffer from short channel effects as a result of insufficient buffer doping. The paper show that controlled iron doping of the GaN buffer during MOVPE growth can suppress all short-channel effects in 0.25mum gate length devices. The authors show that optimised iron doping has no effect on the RF output power or on the knee walkout (current-slump), but significantly improves the power added efficiency
{"title":"Control of Short-Channel Effects in GaN/AlGaN HFETs","authors":"M. Uren, D. Hayes, R. Balmer, D. Wallis, K. Hilton, J. O. Maclean, T. Martin, C. Roff, P. McGovern, J. Benedikt, P. Tasker","doi":"10.1109/EMICC.2006.282751","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282751","url":null,"abstract":"GaN/AlGaN HEMTs can suffer from short channel effects as a result of insufficient buffer doping. The paper show that controlled iron doping of the GaN buffer during MOVPE growth can suppress all short-channel effects in 0.25mum gate length devices. The authors show that optimised iron doping has no effect on the RF output power or on the knee walkout (current-slump), but significantly improves the power added efficiency","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114639473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282683
M. Medina, D. Schreurs, B. Nauwelaers
High frequency devices aimed for power applications cannot be characterized by on-wafer measurements due to power dissipation constraints. Therefore characterization using test fixture is necessary. Latest techniques applied to on-wafer devices use a four-port characterization of the extrinsic network surrounding the device. Nevertheless, this cannot be applied straightforwardly to the test fixture case due to the fact that the ground reference of the device is not the same as the measurement, and this effect increases with frequency. A five-port definition would lead to an accurate characterization, but with the increase of the complexity of the problem. This paper presents an alternative technique based on four-port de-embedding technique with a correction of the local ground effect by using two cold-FET measurements and a simplification of the four-port matrix model
{"title":"Four-port Deembedding Technique for FET Devices Mounted in Hybrid Test Fixture","authors":"M. Medina, D. Schreurs, B. Nauwelaers","doi":"10.1109/EMICC.2006.282683","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282683","url":null,"abstract":"High frequency devices aimed for power applications cannot be characterized by on-wafer measurements due to power dissipation constraints. Therefore characterization using test fixture is necessary. Latest techniques applied to on-wafer devices use a four-port characterization of the extrinsic network surrounding the device. Nevertheless, this cannot be applied straightforwardly to the test fixture case due to the fact that the ground reference of the device is not the same as the measurement, and this effect increases with frequency. A five-port definition would lead to an accurate characterization, but with the increase of the complexity of the problem. This paper presents an alternative technique based on four-port de-embedding technique with a correction of the local ground effect by using two cold-FET measurements and a simplification of the four-port matrix model","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123919550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282793
J. Raskin
A full frequency band analysis is precious for separating physical phenomena taking place in MOS devices. Based on the extraction of a wideband equivalent small-signal circuit, various MOS technologies can be fairly compared and compact models with increase validity domain can be established. The extracted values for the various parameters constituting the electrical equivalent circuit of a particular device are useful not only for integrated circuit designers but also for the engineers at the early stage of the technology development. In this paper, the wideband characterization of several advanced MOS transistors is presented and discussed
{"title":"On-wafer wideband characterization of advanced MOS technologies","authors":"J. Raskin","doi":"10.1109/EMICC.2006.282793","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282793","url":null,"abstract":"A full frequency band analysis is precious for separating physical phenomena taking place in MOS devices. Based on the extraction of a wideband equivalent small-signal circuit, various MOS technologies can be fairly compared and compact models with increase validity domain can be established. The extracted values for the various parameters constituting the electrical equivalent circuit of a particular device are useful not only for integrated circuit designers but also for the engineers at the early stage of the technology development. In this paper, the wideband characterization of several advanced MOS transistors is presented and discussed","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124259721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282795
A. Akiyama, T. Shimura, T. Sato, Y. Hasegawa
A low cost molded MMIC in a QFN package is designed and fabricated for a Ku-band high power amplifier. The generic plastic-molded QFN package contributes to the reduction of the assembly cost. To achieve high reliability with respect to humidity, the MMIC chip is covered with SiN passivation and polyimide coating. The MMIC circuit is designed with accurate distributed FET model and EM simulation. Excellent characteristics of 2W output power and remarkable linearity are achieved, which is compatible with conventional packaged MMICs. The reliability and the mass productivity data are also described in this paper. This MMIC provides a cost effective alternative to a conventional metal-and/or ceramic-based packaged MMIC
{"title":"A Very Low Cost Ku-Band 2W Power Amplifier MMIC using a Plastic-Molded QFN Package","authors":"A. Akiyama, T. Shimura, T. Sato, Y. Hasegawa","doi":"10.1109/EMICC.2006.282795","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282795","url":null,"abstract":"A low cost molded MMIC in a QFN package is designed and fabricated for a Ku-band high power amplifier. The generic plastic-molded QFN package contributes to the reduction of the assembly cost. To achieve high reliability with respect to humidity, the MMIC chip is covered with SiN passivation and polyimide coating. The MMIC circuit is designed with accurate distributed FET model and EM simulation. Excellent characteristics of 2W output power and remarkable linearity are achieved, which is compatible with conventional packaged MMICs. The reliability and the mass productivity data are also described in this paper. This MMIC provides a cost effective alternative to a conventional metal-and/or ceramic-based packaged MMIC","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116779508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282668
W. Ciccognani, F. Di Paolo, F. Giannini, E. Limiti, P. Longhi, A. Serino
In this contribution a set of MMICs' design and test is presented. The circuits have been designed for the synthesis of an RF beam forming network intended for focal plane array radioastronomy receivers
{"title":"Beam Forming Network GaAs modules for Radioastronomy Focal Plane Arrays","authors":"W. Ciccognani, F. Di Paolo, F. Giannini, E. Limiti, P. Longhi, A. Serino","doi":"10.1109/EMICC.2006.282668","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282668","url":null,"abstract":"In this contribution a set of MMICs' design and test is presented. The circuits have been designed for the synthesis of an RF beam forming network intended for focal plane array radioastronomy receivers","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117288592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282738
S. C. Subramaniam, A. Rezazadeh
The electrical behavior of InGaAs following Fe-ion bombardment at 77K temperature in n- and p-type InGaAs structures have been investigated in this paper. Maximum resistivity of ~4times106 Omega/sq and ~7times106 Omega/sq at optimum annealing temperatures of ~250 and 600degC has been determined for p- and n-type InGaAs materials, respectively. These thermally stable high resistive regions in InGaAs due to Fe-ion bombardment are close to the intrinsic limit of InGaAs. Fe acceptor ionization energy of ~0.35 eV have been determined from temperature-dependant study. Good agreement has been observed between the experimental results and that of the physical model developed to observe the effects of Fe+ in InGaAs material
{"title":"The Role and Mechanism of Fe-ion Bombardment in creating highly resistive InGaAs layers","authors":"S. C. Subramaniam, A. Rezazadeh","doi":"10.1109/EMICC.2006.282738","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282738","url":null,"abstract":"The electrical behavior of InGaAs following Fe-ion bombardment at 77K temperature in n- and p-type InGaAs structures have been investigated in this paper. Maximum resistivity of ~4times106 Omega/sq and ~7times106 Omega/sq at optimum annealing temperatures of ~250 and 600degC has been determined for p- and n-type InGaAs materials, respectively. These thermally stable high resistive regions in InGaAs due to Fe-ion bombardment are close to the intrinsic limit of InGaAs. Fe acceptor ionization energy of ~0.35 eV have been determined from temperature-dependant study. Good agreement has been observed between the experimental results and that of the physical model developed to observe the effects of Fe+ in InGaAs material","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123105026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282750
P. Romanini, M. Peroni, C. Lanzieri, A. Cetronio, M. Calori, A. Passaseo, B. Potì, A. Chini, L. Mariucci, A. Di Gaspare, V. Teppati, V. Camarchia
One of the main expected benefits of AlGaN HEMT technology for microwave applications is related to the higher operating bias voltage achievable with these devices. However, various technological issues, concerning material properties and device technology must be properly tailored to fully exploit the potential of that kind of devices. In this work we report on the realization of HEMT device showing improved performance in terms of breakdown voltage, device isolation and reverse current leakage achieved by improved epilayer buffer properties and optimized field plate gate geometry. In particular the low defect density and the high resistivity obtained by using an HT-AlN crystallization layer for the growth of the GaN layer has lead to an effective 2DEG carrier concentration of 8 times 1012 cm-2 with related mobility of 1700cm2/Vs and corresponding devices with a very high voltage breakdown (VB > 200V), excellent active device isolation and limited reverse current leakage
{"title":"Very High Performance GaN HEMT devices by Optimized Buffer and Field Plate Technology","authors":"P. Romanini, M. Peroni, C. Lanzieri, A. Cetronio, M. Calori, A. Passaseo, B. Potì, A. Chini, L. Mariucci, A. Di Gaspare, V. Teppati, V. Camarchia","doi":"10.1109/EMICC.2006.282750","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282750","url":null,"abstract":"One of the main expected benefits of AlGaN HEMT technology for microwave applications is related to the higher operating bias voltage achievable with these devices. However, various technological issues, concerning material properties and device technology must be properly tailored to fully exploit the potential of that kind of devices. In this work we report on the realization of HEMT device showing improved performance in terms of breakdown voltage, device isolation and reverse current leakage achieved by improved epilayer buffer properties and optimized field plate gate geometry. In particular the low defect density and the high resistivity obtained by using an HT-AlN crystallization layer for the growth of the GaN layer has lead to an effective 2DEG carrier concentration of 8 times 1012 cm-2 with related mobility of 1700cm2/Vs and corresponding devices with a very high voltage breakdown (VB > 200V), excellent active device isolation and limited reverse current leakage","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122538597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282762
Guoxuan Qin, N. Jiang, Guogong Wang, Z. Ma
Linearity characteristics between common-emitter (CE) and common-base (CB) SiGe HBTs are compared at different frequencies, under different bias conditions and at different input/output matching conditions in this paper. It is shown that, without impedance matching at input/output of the devices, the CB configuration exhibits better linearity than the CE configuration under the same input power level and the difference of IMD3 between the two configurations decreases with the increase of operation frequency. However, when both input and output of the devices are impedance-matched for maximum output power Pout , the CE configuration has better linearity than the CB configuration. Furthermore, without varying the input/output matching, the linearity of the two configurations varies with bias in different ways that the linearity of the CE configuration degrades and that of the CB configuration improves as the bias is increased. Under certain impedance and bias conditions, the CB configuration can provide better linearity, besides higher power gain, than the CE configuration
{"title":"Configuration Dependence of SiGe HBT Linearity Characteristics","authors":"Guoxuan Qin, N. Jiang, Guogong Wang, Z. Ma","doi":"10.1109/EMICC.2006.282762","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282762","url":null,"abstract":"Linearity characteristics between common-emitter (CE) and common-base (CB) SiGe HBTs are compared at different frequencies, under different bias conditions and at different input/output matching conditions in this paper. It is shown that, without impedance matching at input/output of the devices, the CB configuration exhibits better linearity than the CE configuration under the same input power level and the difference of IMD3 between the two configurations decreases with the increase of operation frequency. However, when both input and output of the devices are impedance-matched for maximum output power Pout , the CE configuration has better linearity than the CB configuration. Furthermore, without varying the input/output matching, the linearity of the two configurations varies with bias in different ways that the linearity of the CE configuration degrades and that of the CB configuration improves as the bias is increased. Under certain impedance and bias conditions, the CB configuration can provide better linearity, besides higher power gain, than the CE configuration","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129412265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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