Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282781
Young Jae Lee, S. Hyun, Geum-Young Tak, Hyun-Kyu Yu
A CMOS phase-locked loop (PLL) which synthesizes frequencies between 6.336~8.976GHz in steps of 528MHz and settles in approximately 150ns using the 528MHz reference clock is presented. Frequency hopping between the bands in the each mode is critical point to design the PLL in the multi-band orthogonal frequency division multiplexing (OFDM) because the frequency switching between each band is less than 9.5ns. To achieve the fast loop settling, the integer-N PLL that operates with the high reference frequency to meet the settling requirement is implemented. Two PLLs that operate at the 9GHz and 528MHz are integrated and shows the band hopping lower than 1ns
{"title":"Fast Settling 9GHz PLL Using 528MHz Reference PLL Clock for MB-OFDM UWB System","authors":"Young Jae Lee, S. Hyun, Geum-Young Tak, Hyun-Kyu Yu","doi":"10.1109/EMICC.2006.282781","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282781","url":null,"abstract":"A CMOS phase-locked loop (PLL) which synthesizes frequencies between 6.336~8.976GHz in steps of 528MHz and settles in approximately 150ns using the 528MHz reference clock is presented. Frequency hopping between the bands in the each mode is critical point to design the PLL in the multi-band orthogonal frequency division multiplexing (OFDM) because the frequency switching between each band is less than 9.5ns. To achieve the fast loop settling, the integer-N PLL that operates with the high reference frequency to meet the settling requirement is implemented. Two PLLs that operate at the 9GHz and 528MHz are integrated and shows the band hopping lower than 1ns","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123883902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282652
A. Matiss, W. Brockerhoff, A. Poloczek, W. Prost, F. Tegude
The influence of temperature on bias dependent small-signal equivalent circuit components of a resonant tunneling diode (RTD) is investigated from 290 K down to 15 K. The RTD model based on bias dependent parasitic elements and the quantum capacitance as well as the quantum conductance is fitted to both, on-wafer DC and RF S-parameter measurements from 45 MHz to 40 GHz over a bias range of 0 V to 0.80 V. For the full temperature range, good agreement between extracted and measured parameters is shown
{"title":"Low-Temperature DC and RF Measurement and Modelling of InGaAs-InAlAs Resonant Tunneling Diodes down to 15 K","authors":"A. Matiss, W. Brockerhoff, A. Poloczek, W. Prost, F. Tegude","doi":"10.1109/EMICC.2006.282652","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282652","url":null,"abstract":"The influence of temperature on bias dependent small-signal equivalent circuit components of a resonant tunneling diode (RTD) is investigated from 290 K down to 15 K. The RTD model based on bias dependent parasitic elements and the quantum capacitance as well as the quantum conductance is fitted to both, on-wafer DC and RF S-parameter measurements from 45 MHz to 40 GHz over a bias range of 0 V to 0.80 V. For the full temperature range, good agreement between extracted and measured parameters is shown","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121309857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282704
C. Ghiu, S. Dalmia, J. Vickers, L. Carastro, W. Czakon, V. Sundaram, G. White
This paper presents the performance of 3D packaging solutions based on novel multilayered organic substrates. Electrical performance of embedded RF passives over 950 MHz to 3 GHz frequency range and stability from -40degC to 85degC has been demonstrated in an organic laminate substrate. Stand-alone, high Q inductors built on a multilayered liquid crystalline polymer (LCP)-based substrate can withstand a 2A direct current with the temperatures well within the safe range. The power handling capability of surface mounted IPDs is also assessed in this study. Reliability test data demonstrated the multilayer substrate compatibility with 1times and 3times lead free solder reflow. A promising high temperature LCP material enabled a significant improvement in the stability of electrical performance after 3times reflow at 260 degC
{"title":"Advanced 3D Packaging using Novel Liquid Crystalline Polymer Based Substrates","authors":"C. Ghiu, S. Dalmia, J. Vickers, L. Carastro, W. Czakon, V. Sundaram, G. White","doi":"10.1109/EMICC.2006.282704","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282704","url":null,"abstract":"This paper presents the performance of 3D packaging solutions based on novel multilayered organic substrates. Electrical performance of embedded RF passives over 950 MHz to 3 GHz frequency range and stability from -40degC to 85degC has been demonstrated in an organic laminate substrate. Stand-alone, high Q inductors built on a multilayered liquid crystalline polymer (LCP)-based substrate can withstand a 2A direct current with the temperatures well within the safe range. The power handling capability of surface mounted IPDs is also assessed in this study. Reliability test data demonstrated the multilayer substrate compatibility with 1times and 3times lead free solder reflow. A promising high temperature LCP material enabled a significant improvement in the stability of electrical performance after 3times reflow at 260 degC","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123639667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282674
Kuan-Yu Chen, Chien-Chang Huang
This paper presents a simple method to extract nonlinear parameters of GaAs pseudomorphic high electron mobility transistor (pHEMT) for Volterra-Series analysis. With measuring the harmonic powers and phase polarities at various attenuations, the nonlinear parameters could be solved in least-square sense to reduce the measured uncertainties. The extracted data are validated by the two-tone measurements for a wide-range bias sweep
{"title":"GaAs Power pHEMT Characterization for Extracting Nonlinear Parameters of Drain Current by Harmonic Measurement","authors":"Kuan-Yu Chen, Chien-Chang Huang","doi":"10.1109/EMICC.2006.282674","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282674","url":null,"abstract":"This paper presents a simple method to extract nonlinear parameters of GaAs pseudomorphic high electron mobility transistor (pHEMT) for Volterra-Series analysis. With measuring the harmonic powers and phase polarities at various attenuations, the nonlinear parameters could be solved in least-square sense to reduce the measured uncertainties. The extracted data are validated by the two-tone measurements for a wide-range bias sweep","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123761131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282779
Sanghoon Sim, Songcheol Hong
A passive buffer of an oscillator to obtain high output power, low harmonics and low phase noise is presented. A cross-coupled oscillator with the passive buffer is fabricated using InGaP/GaAs HBT technology. The oscillation frequency is 6.96 GHz. The 2nd harmonic suppression is -36.23dBc in the one-side output power 9.43 dBm. The phase noise is -121.33 dBc/Hz at 1MHz offset. The chip size is 0.81 times 0.63 mm2. The performances are compared with those of the previously reported oscillators
{"title":"A C-Band Oscillator MMIC with High Output Power, Low Harmonics, and Low Phase Noise using Passive Buffer","authors":"Sanghoon Sim, Songcheol Hong","doi":"10.1109/EMICC.2006.282779","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282779","url":null,"abstract":"A passive buffer of an oscillator to obtain high output power, low harmonics and low phase noise is presented. A cross-coupled oscillator with the passive buffer is fabricated using InGaP/GaAs HBT technology. The oscillation frequency is 6.96 GHz. The 2nd harmonic suppression is -36.23dBc in the one-side output power 9.43 dBm. The phase noise is -121.33 dBc/Hz at 1MHz offset. The chip size is 0.81 times 0.63 mm2. The performances are compared with those of the previously reported oscillators","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124840316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282761
Sungwon Kim, Dong-Hwan Kim, Jin-churl Her, Kyung-Chul Jang, W. Choi, Y. Kwon, K. Seo
77 GHz CPW low noise sub block (LNB) MMICs, which are consisted of a 3 stage LNA and a resistive mixer, have been successfully developed by using 120nm In0.4AlAs/In0.35GaAs metamorphic high electron mobility transistors (MHEMTs). The devices show an extrinsic transconductance gm of 760 mS/mm, a maximum drain current of 750 mA/mm, and a gate drain breakdown voltage of -8.5 V. A cut-off frequency (fT) of 172 GHz and a maximum oscillation frequency (fmax) of over 300 GHz are achieved. The LNA exhibited small signal gain of 19.2 dB and conversion gain of the LNB is measured to be 11 dB at 500 kHz IF
{"title":"77GHz Low Noise Sub Block MMICs with 120 nm In0.4AlAs/In0.35GaAs Metamorphic HEMTs","authors":"Sungwon Kim, Dong-Hwan Kim, Jin-churl Her, Kyung-Chul Jang, W. Choi, Y. Kwon, K. Seo","doi":"10.1109/EMICC.2006.282761","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282761","url":null,"abstract":"77 GHz CPW low noise sub block (LNB) MMICs, which are consisted of a 3 stage LNA and a resistive mixer, have been successfully developed by using 120nm In0.4AlAs/In0.35GaAs metamorphic high electron mobility transistors (MHEMTs). The devices show an extrinsic transconductance gm of 760 mS/mm, a maximum drain current of 750 mA/mm, and a gate drain breakdown voltage of -8.5 V. A cut-off frequency (fT) of 172 GHz and a maximum oscillation frequency (fmax) of over 300 GHz are achieved. The LNA exhibited small signal gain of 19.2 dB and conversion gain of the LNB is measured to be 11 dB at 500 kHz IF","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121800361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282678
J. Aikio, J. Vuolevi, T. Rahkonen
In this paper a recently proposed detailed distortion analysis technique is extended to apply in a rather complex VBIC model that contains multidimensional current and charge models. The technique is implemented on top of normal harmonic balance simulation, and it is based on fitting polynomial models for all nonlinear I-V and Q-V sources of the device, and using these to calculate the various contributions of IM3 distortion. The technique is used to analyze a 2 GHz InGa pHBT power amplifier that shows strong bandwidth dependent signal-induced bias shift
本文将最近提出的详细畸变分析技术推广到一个包含多维电流和电荷模型的相当复杂的VBIC模型中。该技术是在法向谐波平衡仿真的基础上实现的，它基于拟合器件所有非线性I-V和Q-V源的多项式模型，并利用这些模型计算IM3失真的各种贡献。该技术用于分析一个2 GHz InGa pHBT功率放大器，该放大器表现出强烈的带宽依赖性信号诱发偏置偏移
{"title":"Detailed Analysis of IMD of HBT PA Based on VBIC Model","authors":"J. Aikio, J. Vuolevi, T. Rahkonen","doi":"10.1109/EMICC.2006.282678","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282678","url":null,"abstract":"In this paper a recently proposed detailed distortion analysis technique is extended to apply in a rather complex VBIC model that contains multidimensional current and charge models. The technique is implemented on top of normal harmonic balance simulation, and it is based on fitting polynomial models for all nonlinear I-V and Q-V sources of the device, and using these to calculate the various contributions of IM3 distortion. The technique is used to analyze a 2 GHz InGa pHBT power amplifier that shows strong bandwidth dependent signal-induced bias shift","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130632663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EUMC.2006.281477
C. Siegel, V. Ziegler, B. Schonlinner, U. Prechtel, H. Schumacher
This paper presents microwave capacitive RF-MEMS switches based on a novel simplified fabrication process. The devices are fabricated on a silicon substrate using only one metallisation layer. For the capacitive coupling of the switch, an implanted conductive region and thermally grown silicon oxide is used instead of a second metal layer and an additional dielectric layer. In addition, the formerly used bimorph metallisation layer is replaced by a single-metallisation concept, which results in an increased temperature range of operation. The simplified process as well as the switch topology used lead to high performance and highly reliable RF-MEMS switches. RF-measurement results are presented of Ku- and K-band series switches and a Ka-band parallel switch with low insertion losses between -0.2dB and -0.3dB and isolation of e.g. -17dB at 30GHz
{"title":"Simplified RF-MEMS Switches Using Implanted Conductors and Thermal Oxide","authors":"C. Siegel, V. Ziegler, B. Schonlinner, U. Prechtel, H. Schumacher","doi":"10.1109/EUMC.2006.281477","DOIUrl":"https://doi.org/10.1109/EUMC.2006.281477","url":null,"abstract":"This paper presents microwave capacitive RF-MEMS switches based on a novel simplified fabrication process. The devices are fabricated on a silicon substrate using only one metallisation layer. For the capacitive coupling of the switch, an implanted conductive region and thermally grown silicon oxide is used instead of a second metal layer and an additional dielectric layer. In addition, the formerly used bimorph metallisation layer is replaced by a single-metallisation concept, which results in an increased temperature range of operation. The simplified process as well as the switch topology used lead to high performance and highly reliable RF-MEMS switches. RF-measurement results are presented of Ku- and K-band series switches and a Ka-band parallel switch with low insertion losses between -0.2dB and -0.3dB and isolation of e.g. -17dB at 30GHz","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122162861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282689
A. Madjar, Z. Turski, Yifei Li
The premise of GaN HEMT devices to offer superior power amplification performance in microwave frequencies lead to an extensive research in this field, and to numerous publications emphasizing individual performance records such as, current & power densities, linearity and break down voltage. The performance of these, primarily experimental devices, is often reported in the terms of their intended applications, offering either the saturated output power, or 3dB compressed output power, or OFDM and CDMA waveform-specific output power, making the comparison among the devices, and a comparison with other technologies such as LDMOS & GaAs rather difficult. The authors are engaged in the design of a wideband (10:1 BW) 50W @ 1dB compression point linear power amplifier operating up to 2GHz. As a step in this process we determine the performance of an actual, 3.6 mm periphery, pre-production GaN HEMT from CREE. The device performance is simulated using CREE model, and it is compared with the measurements we have taken, both reported in this paper. The results obtained exhibit good convergence with the model, and are presented using the more common performance parameters such as power and efficiency at 1dB compression point, and the linearity in terms of IP3
GaN HEMT器件在微波频率下提供卓越的功率放大性能的前提导致了该领域的广泛研究，以及许多强调单个性能记录的出版物，如电流和功率密度，线性度和击穿电压。这些主要是实验设备的性能通常以其预期应用的术语来报道，提供饱和输出功率，或3dB压缩输出功率，或OFDM和CDMA波形特定输出功率，使得设备之间的比较，以及与其他技术(如LDMOS和GaAs)的比较相当困难。作者致力于设计一种工作频率高达2GHz的宽带(10:1 BW) 50W @ 1dB压缩点线性功率放大器。作为这一过程的第一步，我们确定了CREE实际的3.6 mm外围预生产GaN HEMT的性能。采用CREE模型对器件性能进行了模拟，并与我们所做的测量结果进行了比较。得到的结果与模型具有良好的收敛性，并使用了更常用的性能参数，如1dB压缩点的功率和效率，以及以IP3为单位的线性度
{"title":"GaN HEMT Performance - Measurements and Simulations of a 3.6 mm Device from Cree","authors":"A. Madjar, Z. Turski, Yifei Li","doi":"10.1109/EMICC.2006.282689","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282689","url":null,"abstract":"The premise of GaN HEMT devices to offer superior power amplification performance in microwave frequencies lead to an extensive research in this field, and to numerous publications emphasizing individual performance records such as, current & power densities, linearity and break down voltage. The performance of these, primarily experimental devices, is often reported in the terms of their intended applications, offering either the saturated output power, or 3dB compressed output power, or OFDM and CDMA waveform-specific output power, making the comparison among the devices, and a comparison with other technologies such as LDMOS & GaAs rather difficult. The authors are engaged in the design of a wideband (10:1 BW) 50W @ 1dB compression point linear power amplifier operating up to 2GHz. As a step in this process we determine the performance of an actual, 3.6 mm periphery, pre-production GaN HEMT from CREE. The device performance is simulated using CREE model, and it is compared with the measurements we have taken, both reported in this paper. The results obtained exhibit good convergence with the model, and are presented using the more common performance parameters such as power and efficiency at 1dB compression point, and the linearity in terms of IP3","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126547492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282702
K. Entesari, Gabriel M. Rebeiz
This paper presents a hermetic-compatible surface mount package for microstrip structures designed for K-band applications. The microstrip lines, fabricated on a 250 mum-thick alumina substrate are packaged using a 280 mum-thick silicon cap wafer and gold-gold thermo-compression bonding. A 130 mum cavity is etched in the cap wafer to allow ample space for RF MEMS devices, surface- or bulk-wave acoustic filters, power amplifiers, or multi-chip assemblies. A via-hole transition is used to connect the microstrip line inside the package to the coplanar waveguide (CPW) line on the back side of the alumina wafer. The gold sealing ring is connected to the microstrip ground using via-holes through the alumina wafer to eliminate any parasitic resonance modes and to improve the isolation between the input and output ports. A packaged microstrip line with total dimensions of 2.6 mm has a measured insertion loss and return loss of less than 0.5 dB and 18 dB, respectively, at DC-23 GHz
本文提出了一种用于k波段应用的微带结构的密封兼容表面贴装封装。微带线在250毫米厚的氧化铝衬底上制造，使用280毫米厚的硅帽晶圆和金-金热压缩键合封装。帽晶圆上蚀刻了一个130 μ m的腔，为RF MEMS器件、表面波或体波声滤波器、功率放大器或多芯片组件提供了充足的空间。通过孔过渡将封装内的微带线连接到氧化铝晶圆背面的共面波导(CPW)线。金密封环通过氧化铝晶圆通过过孔连接到微带接地，以消除任何寄生共振模式，并提高输入和输出端口之间的隔离。总尺寸为2.6 mm的封装微带线在DC-23 GHz下的插入损耗和回波损耗分别小于0.5 dB和18 dB
{"title":"A Low-Loss Microstrip Surface-Mount K-Band Package","authors":"K. Entesari, Gabriel M. Rebeiz","doi":"10.1109/EMICC.2006.282702","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282702","url":null,"abstract":"This paper presents a hermetic-compatible surface mount package for microstrip structures designed for K-band applications. The microstrip lines, fabricated on a 250 mum-thick alumina substrate are packaged using a 280 mum-thick silicon cap wafer and gold-gold thermo-compression bonding. A 130 mum cavity is etched in the cap wafer to allow ample space for RF MEMS devices, surface- or bulk-wave acoustic filters, power amplifiers, or multi-chip assemblies. A via-hole transition is used to connect the microstrip line inside the package to the coplanar waveguide (CPW) line on the back side of the alumina wafer. The gold sealing ring is connected to the microstrip ground using via-holes through the alumina wafer to eliminate any parasitic resonance modes and to improve the isolation between the input and output ports. A packaged microstrip line with total dimensions of 2.6 mm has a measured insertion loss and return loss of less than 0.5 dB and 18 dB, respectively, at DC-23 GHz","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127821777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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