Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282650
H. Hsu, Tai-Hsing Lee
In this study, the authors introduce a zero-IF sub-harmonic mixer with high isolation in the 5GHz band using 0.18μm CMOS technology. Placing an LC-tank between the class AB stage and the mixer core improves the isolation between the LO and RF ports. The measured isolation is obtained with a 48 dB between LO and RF ports; and a 9.5dB conversion gain is acquired while consuming 7mA at 2.5V supply voltage
{"title":"A Zero-IF Sub-Harmonic Mixer with High LO-RF Isolation using 0.18 μm CMOS Technology","authors":"H. Hsu, Tai-Hsing Lee","doi":"10.1109/EMICC.2006.282650","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282650","url":null,"abstract":"In this study, the authors introduce a zero-IF sub-harmonic mixer with high isolation in the 5GHz band using 0.18μm CMOS technology. Placing an LC-tank between the class AB stage and the mixer core improves the isolation between the LO and RF ports. The measured isolation is obtained with a 48 dB between LO and RF ports; and a 9.5dB conversion gain is acquired while consuming 7mA at 2.5V supply voltage","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130418112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282669
G. Leuzzi, V. Stornelli
In this work, the frequency-domain spectral balance technique is used for the physics-based analysis of non-linear devices and circuits. This technique assumes a very simple form when applied to the moments of Boltzmann's transport equation, and is especially suitable for very high frequency and for multitone analysis. This approach also allows easy inclusion of frequency-dependent parameters of the semiconductor, especially important at very high frequencies (e.g. dielectric constant), and easy and straightforward coupling to the passive external environment. An example of application to a quasi-2D model with a hydrodynamic formulation of the transport equations is given, and its results are compared to a standard time-domain approach and to DC measured data
{"title":"Frequency-Domain Physics-Based Analysis of semiconductor devices by a Spectral-Balance approach","authors":"G. Leuzzi, V. Stornelli","doi":"10.1109/EMICC.2006.282669","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282669","url":null,"abstract":"In this work, the frequency-domain spectral balance technique is used for the physics-based analysis of non-linear devices and circuits. This technique assumes a very simple form when applied to the moments of Boltzmann's transport equation, and is especially suitable for very high frequency and for multitone analysis. This approach also allows easy inclusion of frequency-dependent parameters of the semiconductor, especially important at very high frequencies (e.g. dielectric constant), and easy and straightforward coupling to the passive external environment. An example of application to a quasi-2D model with a hydrodynamic formulation of the transport equations is given, and its results are compared to a standard time-domain approach and to DC measured data","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126888856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282753
N. Ui, S. Sano
A 100W class-E GaN HEMT device has been developed for high power and high efficiency amplifier. The authors achieved superior measurement results; drain efficiency of 75%, CW output power of 100W and associated power gain of 12dB at 2.14GHz and 50V drain bias operation with acceptable frequency band characteristics in simple class-E circuit topology
{"title":"A 100W Class-E GaN HEMT with 75% Drain Efficiency at 2GHz","authors":"N. Ui, S. Sano","doi":"10.1109/EMICC.2006.282753","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282753","url":null,"abstract":"A 100W class-E GaN HEMT device has been developed for high power and high efficiency amplifier. The authors achieved superior measurement results; drain efficiency of 75%, CW output power of 100W and associated power gain of 12dB at 2.14GHz and 50V drain bias operation with acceptable frequency band characteristics in simple class-E circuit topology","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114419429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282812
C. Wei, A. Metzger, Y. Zhu, C. Cismaru, A. Klimashov, P. Zampardi, R. Ramanrata, Y. Tkachenko
InGaP-GaAs based BIFET is a novel technology that integrates HBT and FET onto a single wafer. The technique expands functionality of circuits and reduces the cost. A novel four-terminal large-signal model was developed for accurate DC and RF applications. The device has a p-layer as backgate that has significant impact on the DC/RF characteristics and therefore, the drain current, gate current, leakage current and all charges/capacitances are 3-dimensional functions, which increases the complexity of the model. The model predicts very well IV/leakage curves for all configurations, including the cases when backgate is connected to source or to gate in that the device reduces to three-terminal. For the three terminal cases, the model also predicts RF performances. Statistic model is also presented to predict the variation of Idss/Vp as well as the corner models that define the extremes of characteristics in terms of epi-layer structure
{"title":"DC/RF and Statistic Modeling of Four Terminal InGap/GaAs Bifet for wireless application","authors":"C. Wei, A. Metzger, Y. Zhu, C. Cismaru, A. Klimashov, P. Zampardi, R. Ramanrata, Y. Tkachenko","doi":"10.1109/EMICC.2006.282812","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282812","url":null,"abstract":"InGaP-GaAs based BIFET is a novel technology that integrates HBT and FET onto a single wafer. The technique expands functionality of circuits and reduces the cost. A novel four-terminal large-signal model was developed for accurate DC and RF applications. The device has a p-layer as backgate that has significant impact on the DC/RF characteristics and therefore, the drain current, gate current, leakage current and all charges/capacitances are 3-dimensional functions, which increases the complexity of the model. The model predicts very well IV/leakage curves for all configurations, including the cases when backgate is connected to source or to gate in that the device reduces to three-terminal. For the three terminal cases, the model also predicts RF performances. Statistic model is also presented to predict the variation of Idss/Vp as well as the corner models that define the extremes of characteristics in terms of epi-layer structure","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121414208","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282677
T. Martín-Guerrero, J. D. Baños-Polglase, C. Camacho-Peñalosa, M. Fernández-Barciela, D. G. Morgan, P. Tasker
A novel approach to extract the state functions of microwave FET-type quasi-static models from large-signal waveform measurements is described. The approach employs a one-port quasi-static nonlinear state functions frequency domain-based extraction method together with a procedure to transform, by proper loading at the control terminals, the two-port extraction problem into multiple one-port extraction problems. The main advantage of this approach is that it provides directly the charge-voltage state functions, without the need to perform the integration of the incremental capacitance-voltage characteristics as required by time domain-based approaches. The performance of the resulting approach is assessed by extracting the nonlinear state functions of a HEMT quasi-static model from large-signal microwave measurements
{"title":"Frequency domain-based approach for nonlinear quasi-static FET model extraction from large-signal waveform measurements","authors":"T. Martín-Guerrero, J. D. Baños-Polglase, C. Camacho-Peñalosa, M. Fernández-Barciela, D. G. Morgan, P. Tasker","doi":"10.1109/EMICC.2006.282677","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282677","url":null,"abstract":"A novel approach to extract the state functions of microwave FET-type quasi-static models from large-signal waveform measurements is described. The approach employs a one-port quasi-static nonlinear state functions frequency domain-based extraction method together with a procedure to transform, by proper loading at the control terminals, the two-port extraction problem into multiple one-port extraction problems. The main advantage of this approach is that it provides directly the charge-voltage state functions, without the need to perform the integration of the incremental capacitance-voltage characteristics as required by time domain-based approaches. The performance of the resulting approach is assessed by extracting the nonlinear state functions of a HEMT quasi-static model from large-signal microwave measurements","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116637745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282655
H. Tseng
Mixed-mode modeling is originally demonstrated for parameter extraction of advanced InGaAs HBTs in RFIC systems. This efficient approach combines the genetic algorithm (GA) with succinct analytical formulae to determine physically meaningful circuit elements used in the SPICE-like simulator. Evaluation of simulated and analytically-derived values validates the accuracy of this methodology
{"title":"Mixed-Mode Modeling and Parameter Extraction of Advanced InGaAs HBTs in RFIC Systems","authors":"H. Tseng","doi":"10.1109/EMICC.2006.282655","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282655","url":null,"abstract":"Mixed-mode modeling is originally demonstrated for parameter extraction of advanced InGaAs HBTs in RFIC systems. This efficient approach combines the genetic algorithm (GA) with succinct analytical formulae to determine physically meaningful circuit elements used in the SPICE-like simulator. Evaluation of simulated and analytically-derived values validates the accuracy of this methodology","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115214927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282680
Kwok-hung. Pao, C. Hsu, H. Chuang, C.‐L. Lu, C. Chen
A 3-10 GHz broadband CMOS T/R switch for ultra-wideband (UWB) transceiver is presented. The broadband CMOS T/R switch is fabricated based on the 0.18 mu 1P6M standard CMOS process. On-chip measurement of the CMOS T/R switch is performed. The insertion loss of the proposed CMOS T/R Switch is about 3.1plusmn1.3dB. The return losses at both input and output terminals are higher than 14 dB. It is also characterized with 25-34dB isolation and 18-20 dBm input P1dB. The broadband CMOS T/R switch shows highly linear phase and group delay of 20plusmn10 ps from 10MHz to 15GHz. It can be easily integrated with other CMOS RFICs to form on-chip transceivers for various UWB applications
{"title":"A 3-10GHz Broadband CMOS T/R Switch for UWB Applications","authors":"Kwok-hung. Pao, C. Hsu, H. Chuang, C.‐L. Lu, C. Chen","doi":"10.1109/EMICC.2006.282680","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282680","url":null,"abstract":"A 3-10 GHz broadband CMOS T/R switch for ultra-wideband (UWB) transceiver is presented. The broadband CMOS T/R switch is fabricated based on the 0.18 mu 1P6M standard CMOS process. On-chip measurement of the CMOS T/R switch is performed. The insertion loss of the proposed CMOS T/R Switch is about 3.1plusmn1.3dB. The return losses at both input and output terminals are higher than 14 dB. It is also characterized with 25-34dB isolation and 18-20 dBm input P1dB. The broadband CMOS T/R switch shows highly linear phase and group delay of 20plusmn10 ps from 10MHz to 15GHz. It can be easily integrated with other CMOS RFICs to form on-chip transceivers for various UWB applications","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114676965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282661
F. Alimenti, M. Borgarino, R. Codeluppi, V. Palazzari, M. Pifferi, L. Roselli, A. Scorzoni, F. Fantini
This paper deals with the design of a 5GHz WLAN heterodyne transmitter for domotic applications. The transmitter has been realized in commercial 0.35μm Si/SiGe BiCMOS technology with the purpose to reduce cost while achieve an high integration level. Measurements on a prototype, wire-bonded on a low-cost FR4 printed circuit board, have been carried-out showing an overall linear gain of 14dB an input referred compression point of -6.5dBm and a third-order input intercept point of +2.7dBm
{"title":"A Single-Chip 5GHz WLAN Transmitter in 0.35μm Si/SiGe BiCMOS Technology","authors":"F. Alimenti, M. Borgarino, R. Codeluppi, V. Palazzari, M. Pifferi, L. Roselli, A. Scorzoni, F. Fantini","doi":"10.1109/EMICC.2006.282661","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282661","url":null,"abstract":"This paper deals with the design of a 5GHz WLAN heterodyne transmitter for domotic applications. The transmitter has been realized in commercial 0.35μm Si/SiGe BiCMOS technology with the purpose to reduce cost while achieve an high integration level. Measurements on a prototype, wire-bonded on a low-cost FR4 printed circuit board, have been carried-out showing an overall linear gain of 14dB an input referred compression point of -6.5dBm and a third-order input intercept point of +2.7dBm","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126073793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282816
W. Batty
Original recursive construction and series acceleration techniques are presented for an analytically exact solution of temperature response at any point in an arbitrary N-level, finite, rectangular multi-layer. This enhanced solution is fast and robust and provides accurate calculation of thermal resistance for packaged and mounted power FETs and MMICs. The model is validated against liquid crystal measurements. It forms the basis for quasi-analytical construction of the global thermal impedance matrix for complicated microwave systems by spectral, domain decomposition. Construction costs can be O(I), where I is the number of subvolume heating and interface elements. An original recursive convolution technique is presented producing transient simulation after pre-computation at O(N) cost, where N is the number of time steps. The method is illustrated by simulation of a mounted, packaged and metallised FET. This represents the most detailed quasi-analytical thermal simulation ever presented. This generalised network parameter description provides immediately boundary condition independent (BCI) compact dynamic thermal models for electrothermal CAD
{"title":"Analytical Solution in Complicated Volumes for Detailed Compact Thermal Model Construction","authors":"W. Batty","doi":"10.1109/EMICC.2006.282816","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282816","url":null,"abstract":"Original recursive construction and series acceleration techniques are presented for an analytically exact solution of temperature response at any point in an arbitrary N-level, finite, rectangular multi-layer. This enhanced solution is fast and robust and provides accurate calculation of thermal resistance for packaged and mounted power FETs and MMICs. The model is validated against liquid crystal measurements. It forms the basis for quasi-analytical construction of the global thermal impedance matrix for complicated microwave systems by spectral, domain decomposition. Construction costs can be O(I), where I is the number of subvolume heating and interface elements. An original recursive convolution technique is presented producing transient simulation after pre-computation at O(N) cost, where N is the number of time steps. The method is illustrated by simulation of a mounted, packaged and metallised FET. This represents the most detailed quasi-analytical thermal simulation ever presented. This generalised network parameter description provides immediately boundary condition independent (BCI) compact dynamic thermal models for electrothermal CAD","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116524046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282813
B. G. Vasallo, N. Wichmann, S. Bollaert, A. Cappy, Tomas Gonzalez, D. Pardo, J. Mateos
The intrinsic static and dynamic performance of InAlAs/InGaAs double-gate high electron mobility transistors (DG-HEMTs) is studied by means of an ensemble 2D Monte Carlo simulator. Our model allows going deeply into the physical behavior of this novel device in comparison with similar standard HEMTs. Different gate lengths are analyzed in order to check the attenuation of short-channel effects expected in the DG-structures. The intrinsic cut-off frequency fc of the DG-HEMTs is found to be similar to that of HEMTs, but the higher values of the figures of merit gm/gd and Cgs/C gd lead to an improvement of fmax
{"title":"Monte Carlo Comparison Between InP-Based Double-Gate and Standard HEMTs","authors":"B. G. Vasallo, N. Wichmann, S. Bollaert, A. Cappy, Tomas Gonzalez, D. Pardo, J. Mateos","doi":"10.1109/EMICC.2006.282813","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282813","url":null,"abstract":"The intrinsic static and dynamic performance of InAlAs/InGaAs double-gate high electron mobility transistors (DG-HEMTs) is studied by means of an ensemble 2D Monte Carlo simulator. Our model allows going deeply into the physical behavior of this novel device in comparison with similar standard HEMTs. Different gate lengths are analyzed in order to check the attenuation of short-channel effects expected in the DG-structures. The intrinsic cut-off frequency fc of the DG-HEMTs is found to be similar to that of HEMTs, but the higher values of the figures of merit gm/gd and Cgs/C gd lead to an improvement of fmax","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129547660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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