Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282797
P. Schuh, R. Leberer, H. Sledzik, M. Oppermann, B. Adelseck, H. Brugger, R. Quay, M. Mikulla, G. Weimann
Power amplifiers for a next generation of T/R-modules in future active array antennas are realized as monolithically integrated circuits on the bases of novel AlGaN/GaN HEMT structures. Both, driver and high power amplifiers are designed for X-band frequencies. The monolithically integrated circuits (MMICs) are designed, simulated and fabricated using a novel via-hole microstrip technology. Output power levels of 1.6 W (32 dBm) for the driver amplifier (DA) and 20 W (43 dBm) for the high power amplifier (HPA) are measured. An amplifier chain circuitry, with mounted GaN DA and HPA MMICs, is designed based on a multi-layer LTCC technology
未来有源阵列天线中用于新一代T/ r模块的功率放大器是基于新型AlGaN/GaN HEMT结构的单片集成电路实现的。驱动器和高功率放大器都是为x波段频率设计的。采用一种新颖的过孔微带技术设计、模拟和制作了单片集成电路。驱动放大器(DA)的输出功率为1.6 W (32dbm)，高功率放大器(HPA)的输出功率为20 W (43dbm)。基于多层LTCC技术，设计了一种带有GaN、DA和HPA mmic的放大器链电路
{"title":"Advanced High Power Amplifier Chain for X-Band T/R-Modules based on GaN MMICs","authors":"P. Schuh, R. Leberer, H. Sledzik, M. Oppermann, B. Adelseck, H. Brugger, R. Quay, M. Mikulla, G. Weimann","doi":"10.1109/EMICC.2006.282797","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282797","url":null,"abstract":"Power amplifiers for a next generation of T/R-modules in future active array antennas are realized as monolithically integrated circuits on the bases of novel AlGaN/GaN HEMT structures. Both, driver and high power amplifiers are designed for X-band frequencies. The monolithically integrated circuits (MMICs) are designed, simulated and fabricated using a novel via-hole microstrip technology. Output power levels of 1.6 W (32 dBm) for the driver amplifier (DA) and 20 W (43 dBm) for the high power amplifier (HPA) are measured. An amplifier chain circuitry, with mounted GaN DA and HPA MMICs, is designed based on a multi-layer LTCC technology","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129259237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282788
R. Wormald, S. David, G. Panaghiston, R. Jeffries
Lower cost solutions for packaging GaAs pHEMT devices, MMIC's and multi chip modules (MCM's) are now an essential requirement for high-rel military applications. This is very apparent in phased array applications where a large number of modules can have significant cost implications. A potential, novel, near hermetic and cost effective packaging solution, available in low to medium volumes, using liquid crystal polymer (LCP) laminates and conventional PCB manufacturing techniques is discussed
{"title":"A Low Cost Packaging Solution for Microwave Applications","authors":"R. Wormald, S. David, G. Panaghiston, R. Jeffries","doi":"10.1109/EMICC.2006.282788","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282788","url":null,"abstract":"Lower cost solutions for packaging GaAs pHEMT devices, MMIC's and multi chip modules (MCM's) are now an essential requirement for high-rel military applications. This is very apparent in phased array applications where a large number of modules can have significant cost implications. A potential, novel, near hermetic and cost effective packaging solution, available in low to medium volumes, using liquid crystal polymer (LCP) laminates and conventional PCB manufacturing techniques is discussed","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129387558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282786
Yaoming Sun, S. Glisic, F. Herzel
This paper presents a 60 GHz receiver front-end in SiGe:C BiCMOS technology. The conversion gain is 22 dB from 60 GHz to 5 GHz without IF amplification. This front-end includes an LNA, a mixer and a 56 GHz PLL. The measured output 1-dB compression point is -5dBm
{"title":"A Fully Differential 60 GHz Receiver Front-End with Integrated PLL in SiGe:C BiCMOS","authors":"Yaoming Sun, S. Glisic, F. Herzel","doi":"10.1109/EMICC.2006.282786","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282786","url":null,"abstract":"This paper presents a 60 GHz receiver front-end in SiGe:C BiCMOS technology. The conversion gain is 22 dB from 60 GHz to 5 GHz without IF amplification. This front-end includes an LNA, a mixer and a 56 GHz PLL. The measured output 1-dB compression point is -5dBm","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128283053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282654
J. Yoon, Nam-Young Kim
An asymmetrical inductance tank (AIT) structure provides high quality factor in tank and harmonic noise frequency filtering (HNFF) technique shorts harmonic noises to ground. The VCO directly drives the on-chipped double balanced mixer to convert RF carrier to IF frequency through local oscillator. Further, output amplifier improves final power performance. This paper presents the design for a prototype 1.721 GHz LC VCO, mixer, and output amplifier that have been designed for low phase noise and high output power. The HNFF-VCO exhibited a phase noise of -133.96 dBc/Hz at 1 MHz offset and a tuning range of 261 MHz. While totally on-chipped downconverter shows a third-order input intercept point (IIP3) of 12.44 dBm, a third-order output intercept point (OIP3) of 21.44 dBm, an input P1dB of 3 dBm, an RF return loss of -31 dB, and an IF return loss of -26 dB. The RF-IF isolation is 57 dB. Also, this downconverter has a conversion gain of 8.9 dB through output amplifier. The totally on-chipped downconverter is 2.56 times 1.07 mm2 of chip area
{"title":"A New Harmonic Noise Frequency Filtering VCO and Mixer Co-design","authors":"J. Yoon, Nam-Young Kim","doi":"10.1109/EMICC.2006.282654","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282654","url":null,"abstract":"An asymmetrical inductance tank (AIT) structure provides high quality factor in tank and harmonic noise frequency filtering (HNFF) technique shorts harmonic noises to ground. The VCO directly drives the on-chipped double balanced mixer to convert RF carrier to IF frequency through local oscillator. Further, output amplifier improves final power performance. This paper presents the design for a prototype 1.721 GHz LC VCO, mixer, and output amplifier that have been designed for low phase noise and high output power. The HNFF-VCO exhibited a phase noise of -133.96 dBc/Hz at 1 MHz offset and a tuning range of 261 MHz. While totally on-chipped downconverter shows a third-order input intercept point (IIP3) of 12.44 dBm, a third-order output intercept point (OIP3) of 21.44 dBm, an input P1dB of 3 dBm, an RF return loss of -31 dB, and an IF return loss of -26 dB. The RF-IF isolation is 57 dB. Also, this downconverter has a conversion gain of 8.9 dB through output amplifier. The totally on-chipped downconverter is 2.56 times 1.07 mm2 of chip area","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116405285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282669
G. Leuzzi, V. Stornelli
In this work, the frequency-domain spectral balance technique is used for the physics-based analysis of non-linear devices and circuits. This technique assumes a very simple form when applied to the moments of Boltzmann's transport equation, and is especially suitable for very high frequency and for multitone analysis. This approach also allows easy inclusion of frequency-dependent parameters of the semiconductor, especially important at very high frequencies (e.g. dielectric constant), and easy and straightforward coupling to the passive external environment. An example of application to a quasi-2D model with a hydrodynamic formulation of the transport equations is given, and its results are compared to a standard time-domain approach and to DC measured data
{"title":"Frequency-Domain Physics-Based Analysis of semiconductor devices by a Spectral-Balance approach","authors":"G. Leuzzi, V. Stornelli","doi":"10.1109/EMICC.2006.282669","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282669","url":null,"abstract":"In this work, the frequency-domain spectral balance technique is used for the physics-based analysis of non-linear devices and circuits. This technique assumes a very simple form when applied to the moments of Boltzmann's transport equation, and is especially suitable for very high frequency and for multitone analysis. This approach also allows easy inclusion of frequency-dependent parameters of the semiconductor, especially important at very high frequencies (e.g. dielectric constant), and easy and straightforward coupling to the passive external environment. An example of application to a quasi-2D model with a hydrodynamic formulation of the transport equations is given, and its results are compared to a standard time-domain approach and to DC measured data","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126888856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282742
M. Schlechtweg, I. Kallfass, A. Tessmann, C. Schworer, A. Leuther
We report on the latest results of millimeter-wave IC components realized using IAF's metamorphic HEMT technology, ranging from small-signal low-noise amplifiers to nonlinear applications such as power amplifiers and frequency converters. A G-band four-stage cascode amplifier MMIC achieves 21 dB gain at 220 GHz. At 155 GHz, a two-stage cascode design reaches 15 dB gain with a noise figure of 4 dB. Frequency conversion is demonstrated in a doubler, achieving more than 0 dBm output power over the frequency range from 180 to 220 GHz. The same doubler is combined with a resistive mixer to form a G-band down-converter with as low as 10 dB conversion loss. At 94 GHz, a two-stage power amplifier MMIC achieves 23.3 dBm
{"title":"Millimeter-Wave Front-End Components in Metamorphic HEMT Technology","authors":"M. Schlechtweg, I. Kallfass, A. Tessmann, C. Schworer, A. Leuther","doi":"10.1109/EMICC.2006.282742","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282742","url":null,"abstract":"We report on the latest results of millimeter-wave IC components realized using IAF's metamorphic HEMT technology, ranging from small-signal low-noise amplifiers to nonlinear applications such as power amplifiers and frequency converters. A G-band four-stage cascode amplifier MMIC achieves 21 dB gain at 220 GHz. At 155 GHz, a two-stage cascode design reaches 15 dB gain with a noise figure of 4 dB. Frequency conversion is demonstrated in a doubler, achieving more than 0 dBm output power over the frequency range from 180 to 220 GHz. The same doubler is combined with a resistive mixer to form a G-band down-converter with as low as 10 dB conversion loss. At 94 GHz, a two-stage power amplifier MMIC achieves 23.3 dBm","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125448100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282681
D. Peyrou, P. Pons, A. Nicolas, J. Tao, H. Granier, R. Plana
RF-MEMS switches devices are made of moveable and timy structures (beams) that must be encapsulated in order to protect them from harmful environmental influences, to increase their reliability and lifetime. This paper presents a packaging solution based on a micromachined Foturan cap and BCB sealing. In order to validate the packaging technology, RF switch onto coplanar waveguide lines for 6-18 GHz was designed using HFSS software package, and fabricated. The demonstrator was characterised in terms of return and insertion losses measurements. The agreement between the modelling and the measurements is very good, and validates the technological approach, which assures insignificant impact of the package on the RF losses
{"title":"Foturan Cap and BCB Sealing-Ring for RF MEMS Packaging Applications","authors":"D. Peyrou, P. Pons, A. Nicolas, J. Tao, H. Granier, R. Plana","doi":"10.1109/EMICC.2006.282681","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282681","url":null,"abstract":"RF-MEMS switches devices are made of moveable and timy structures (beams) that must be encapsulated in order to protect them from harmful environmental influences, to increase their reliability and lifetime. This paper presents a packaging solution based on a micromachined Foturan cap and BCB sealing. In order to validate the packaging technology, RF switch onto coplanar waveguide lines for 6-18 GHz was designed using HFSS software package, and fabricated. The demonstrator was characterised in terms of return and insertion losses measurements. The agreement between the modelling and the measurements is very good, and validates the technological approach, which assures insignificant impact of the package on the RF losses","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124060669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282670
P. White, W. Stiebler, P. Balas
An improved modified Materka I-V model for PHEMT devices is described which enables pinch-off variation to be properly simulated by adjusting a single parameter. The improved formulation is based on including the built-in potential in the definition of gate bias. The model is validated experimentally using data from a production PHEMT process
{"title":"Improved Modified Materka Model for Simulation of Pinch-Off Variation in PHEMT Devices","authors":"P. White, W. Stiebler, P. Balas","doi":"10.1109/EMICC.2006.282670","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282670","url":null,"abstract":"An improved modified Materka I-V model for PHEMT devices is described which enables pinch-off variation to be properly simulated by adjusting a single parameter. The improved formulation is based on including the built-in potential in the definition of gate bias. The model is validated experimentally using data from a production PHEMT process","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129037847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282650
H. Hsu, Tai-Hsing Lee
In this study, the authors introduce a zero-IF sub-harmonic mixer with high isolation in the 5GHz band using 0.18μm CMOS technology. Placing an LC-tank between the class AB stage and the mixer core improves the isolation between the LO and RF ports. The measured isolation is obtained with a 48 dB between LO and RF ports; and a 9.5dB conversion gain is acquired while consuming 7mA at 2.5V supply voltage
{"title":"A Zero-IF Sub-Harmonic Mixer with High LO-RF Isolation using 0.18 μm CMOS Technology","authors":"H. Hsu, Tai-Hsing Lee","doi":"10.1109/EMICC.2006.282650","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282650","url":null,"abstract":"In this study, the authors introduce a zero-IF sub-harmonic mixer with high isolation in the 5GHz band using 0.18μm CMOS technology. Placing an LC-tank between the class AB stage and the mixer core improves the isolation between the LO and RF ports. The measured isolation is obtained with a 48 dB between LO and RF ports; and a 9.5dB conversion gain is acquired while consuming 7mA at 2.5V supply voltage","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130418112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282657
B. Benbakhti, M. Rousseau, J. De Jaeger
Field plate AlGaN/GaN HEMT (high electron mobility transistor) structures, are very promising to improve the microwave power performance. This device permits to improve the breakdown voltage but the field plate (FP) electrode involves an increase of the parasitic capacitances and consequently a drop of the current gain transition frequency. So a compromise must be found depending on the operating frequency. In this paper, a theoretical 2D-hydrodynamic model is developed to study the impact of the FP on the device performance
{"title":"Study of Field Plate AlGaN/GaN HEMTs by Means of a 2D-Hydrdynamic Model for Power Applications","authors":"B. Benbakhti, M. Rousseau, J. De Jaeger","doi":"10.1109/EMICC.2006.282657","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282657","url":null,"abstract":"Field plate AlGaN/GaN HEMT (high electron mobility transistor) structures, are very promising to improve the microwave power performance. This device permits to improve the breakdown voltage but the field plate (FP) electrode involves an increase of the parasitic capacitances and consequently a drop of the current gain transition frequency. So a compromise must be found depending on the operating frequency. In this paper, a theoretical 2D-hydrodynamic model is developed to study the impact of the FP on the device performance","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116685234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：