Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282784
U. Rohde, A. Poddar
A high intercept points, broadband, cost-effective and power-efficient passive reflection FET double balanced mixer (DBM) is reported. This paper is based on novel approach that gives intercept points (IP3) in excess of 42dB in and conversion loss less than 9.5 dB with the LO power typically 17dBm throughout the frequency bands (RF: 600-2500MHz, LO: 550-2300MHz, IF: 50-200MHz). The interport isolation is better than 30 dB for broadband applications, and the circuit topology is not limited to these frequencies, and can be easily extended for present and later generation of communication systems
{"title":"High Intercept Point, Broadband, Cost-Effective, and Power-Efficient Passive Reflection FET DBM","authors":"U. Rohde, A. Poddar","doi":"10.1109/EMICC.2006.282784","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282784","url":null,"abstract":"A high intercept points, broadband, cost-effective and power-efficient passive reflection FET double balanced mixer (DBM) is reported. This paper is based on novel approach that gives intercept points (IP3) in excess of 42dB in and conversion loss less than 9.5 dB with the LO power typically 17dBm throughout the frequency bands (RF: 600-2500MHz, LO: 550-2300MHz, IF: 50-200MHz). The interport isolation is better than 30 dB for broadband applications, and the circuit topology is not limited to these frequencies, and can be easily extended for present and later generation of communication systems","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125079552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282764
A. de Souza, J. Nallatamby, M. Prigent
Different setups for the measurement of the low-frequency noise of semiconductor devices have been proposed in the literature, based on the use of either low-noise voltage amplifiers (VAs) or, more recently, transimpedance amplifiers (TAs). This paper aims to address the applicability and physical limit of each configuration, when they are applied to measure the LF noise of HBTs or diodes at moderate to high DC current densities. Extracted noise curves issued from different setups are analyzed. Noise data collected from recent low-noise technologies shows that physical limits are being systematically approached
{"title":"Low-Frequency Noise Measurements of Bipolar Devices Under High DC Current Density: Whether Transimpedance or Voltage Amplifiers","authors":"A. de Souza, J. Nallatamby, M. Prigent","doi":"10.1109/EMICC.2006.282764","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282764","url":null,"abstract":"Different setups for the measurement of the low-frequency noise of semiconductor devices have been proposed in the literature, based on the use of either low-noise voltage amplifiers (VAs) or, more recently, transimpedance amplifiers (TAs). This paper aims to address the applicability and physical limit of each configuration, when they are applied to measure the LF noise of HBTs or diodes at moderate to high DC current densities. Extracted noise curves issued from different setups are analyzed. Noise data collected from recent low-noise technologies shows that physical limits are being systematically approached","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121157749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282745
C. Roff, P. McGovern, J. Benedikt, P. Tasker, R. Balmer, D. Wallis, K. Hilton, J. O. Maclean, D. Hayes, M. Uren, T. Martin
Detailed time-domain IV waveforms at RF frequencies are employed for characterisation of AlGaN/GaN HFETs in order to steer and advance device development. The IV time-domain data is used to isolate the separate effects of pinch-off and knee-walkout behaviour in limiting device performance. Furthermore, the waveform measurements which are obtained with a previously unseen level of detail, allowed the direct extraction of optimum device operating conditions
{"title":"Detailed Analysis of DC-RF Dispersion in AlGaN/GaN HFETs using Waveform Measurements","authors":"C. Roff, P. McGovern, J. Benedikt, P. Tasker, R. Balmer, D. Wallis, K. Hilton, J. O. Maclean, D. Hayes, M. Uren, T. Martin","doi":"10.1109/EMICC.2006.282745","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282745","url":null,"abstract":"Detailed time-domain IV waveforms at RF frequencies are employed for characterisation of AlGaN/GaN HFETs in order to steer and advance device development. The IV time-domain data is used to isolate the separate effects of pinch-off and knee-walkout behaviour in limiting device performance. Furthermore, the waveform measurements which are obtained with a previously unseen level of detail, allowed the direct extraction of optimum device operating conditions","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117051033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282770
A. Tessmann, A. Leuther, M. Kuri, H. Massler, M. Riessle, H. Essen, H. Stanko, R. Sommer, M. Zink, R. Stibal, W. Reinert, M. Schlechtweg
G-band low-noise amplifier (LNA) modules have been successfully developed for use in high-resolution radiometric imaging applications. The WR-5 waveguide modules contain a four-stage 220 GHz cascode LNA MMIC and two microstrip-to-waveguide transitions which were realized on 50 mum thick quartz substrates. The monolithic amplifier circuits were fabricated using a well proven 0.1 mum InAlAs/InGaAs metamorphic high electron mobility transistor (MHEMT) technology in combination with grounded coplanar waveguides (GCPW). Furthermore, an MMIC based 220 GHz direct detection radiometer was developed, for the first time, containing three amplifier modules connected in series and demonstrating a small-signal gain of more than 50 dB over the frequency range from 209 to 217 GHz
{"title":"220 GHz Low-Noise Amplifier Modules for Radiometric Imaging Applications","authors":"A. Tessmann, A. Leuther, M. Kuri, H. Massler, M. Riessle, H. Essen, H. Stanko, R. Sommer, M. Zink, R. Stibal, W. Reinert, M. Schlechtweg","doi":"10.1109/EMICC.2006.282770","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282770","url":null,"abstract":"G-band low-noise amplifier (LNA) modules have been successfully developed for use in high-resolution radiometric imaging applications. The WR-5 waveguide modules contain a four-stage 220 GHz cascode LNA MMIC and two microstrip-to-waveguide transitions which were realized on 50 mum thick quartz substrates. The monolithic amplifier circuits were fabricated using a well proven 0.1 mum InAlAs/InGaAs metamorphic high electron mobility transistor (MHEMT) technology in combination with grounded coplanar waveguides (GCPW). Furthermore, an MMIC based 220 GHz direct detection radiometer was developed, for the first time, containing three amplifier modules connected in series and demonstrating a small-signal gain of more than 50 dB over the frequency range from 209 to 217 GHz","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126526190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282665
Nogil Myoung, H. S. Kang, Seok Tae Kim, Byoung Gun Choi, Seong-Su Park, C. Park
A low-voltage, low-power and high-gain mixer core structure based on the unbalanced mixer cell or square-law mixer cell for 5GHz wireless LAN applications is presented in this paper. To reduce power dissipation, a new single-balanced mixer was proposed which operates under a low supply voltage and with the current reuse technique. The circuit was designed with a 0.18mum CMOS process. The designed down-conversion mixer has a maximum conversion gain of 22dB with LO power of -2.5dBm. However, with small LO power of -10dBm, -15dBm and -20dBm the mixer shows a moderate conversion gain of 14.9dB, 10dB and 5.1dB, and an input P1dB of -14dBm, -9.5dBm and -4.5dBm, and an input IP3 of -4.5dBm, 0dBm and 5dBm, respectively. The designed mixer including a bias circuit consumes 1.2mA under a 1.5V supply voltage. The chip size including pads is 0.77mm times 0.81mm
提出了一种适用于5GHz无线局域网的基于非平衡混频器单元或平方律混频器单元的低电压、低功耗、高增益混频器核心结构。为了降低功耗，提出了一种低电压、电流复用技术的新型单平衡混频器。电路采用0.18 μ m CMOS工艺设计。所设计的下变频混频器最大转换增益为22dB，本端功率为-2.5dBm。然而，当本端功率为-10dBm、-15dBm和-20dBm时，混频器的转换增益适中，分别为14.9dB、10dB和5.1dB，输入P1dB分别为-14dBm、-9.5dBm和-4.5dBm，输入IP3分别为-4.5dBm、0dBm和5dBm。设计的混频器包括一个偏置电路，在1.5V电源电压下消耗1.2mA。包括衬垫在内的芯片尺寸为0.77mm × 0.81mm
{"title":"Low-voltage, Low-power and High-gain Mixer Based on Unbalanced Mixer Cell","authors":"Nogil Myoung, H. S. Kang, Seok Tae Kim, Byoung Gun Choi, Seong-Su Park, C. Park","doi":"10.1109/EMICC.2006.282665","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282665","url":null,"abstract":"A low-voltage, low-power and high-gain mixer core structure based on the unbalanced mixer cell or square-law mixer cell for 5GHz wireless LAN applications is presented in this paper. To reduce power dissipation, a new single-balanced mixer was proposed which operates under a low supply voltage and with the current reuse technique. The circuit was designed with a 0.18mum CMOS process. The designed down-conversion mixer has a maximum conversion gain of 22dB with LO power of -2.5dBm. However, with small LO power of -10dBm, -15dBm and -20dBm the mixer shows a moderate conversion gain of 14.9dB, 10dB and 5.1dB, and an input P1dB of -14dBm, -9.5dBm and -4.5dBm, and an input IP3 of -4.5dBm, 0dBm and 5dBm, respectively. The designed mixer including a bias circuit consumes 1.2mA under a 1.5V supply voltage. The chip size including pads is 0.77mm times 0.81mm","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126157709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this paper, we present a power amplifier module package using a selectively anodized aluminum substrate for mobile handsets operating in the 1850 MHz to 1910 MHz PCS band. High-Q passive components (inductors, capacitors, transmission lines) for implementing the power amplifier are integrated on a 60 mum thick anodized aluminum layer and a bare InGaP HBT MMIC die is mounted on aluminum with the ability of effective heat dissipation. The fabricated module has a compact 3mm times 3mm size and exhibits 28.4 dB power gain, 41.5 % power added efficiency (PAE) and -36 dBc adjacent channel power ratio (ACPR) under a supply voltage of 3.7 V
{"title":"PCS Power Amplifier Module Package Using Selectively Anodized Aluminum Substrate","authors":"Seong-Ho Shin, Ju-Hyang Lee, Bo-In Sohn, Seung-Han Ryu, Young-Se Kwon","doi":"10.1109/EMICC.2006.282703","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282703","url":null,"abstract":"In this paper, we present a power amplifier module package using a selectively anodized aluminum substrate for mobile handsets operating in the 1850 MHz to 1910 MHz PCS band. High-Q passive components (inductors, capacitors, transmission lines) for implementing the power amplifier are integrated on a 60 mum thick anodized aluminum layer and a bare InGaP HBT MMIC die is mounted on aluminum with the ability of effective heat dissipation. The fabricated module has a compact 3mm times 3mm size and exhibits 28.4 dB power gain, 41.5 % power added efficiency (PAE) and -36 dBc adjacent channel power ratio (ACPR) under a supply voltage of 3.7 V","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130914950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282701
S. Kumar, H. Morkner
A 20-42GHz output frequency GaAs MMIC frequency doubler chip has been developed that requires low input drive power and produces high output power with high fundamental & harmonic suppression without any external filter. This developed chip has an integrated broadband single ended-in to differential-out active Balun with impedance inverter and a broadband waveform shaping circuit. The unique topology of developed Balun helps to produce high voltage swing at differential outputs at low input drive power with excellent amplitude and phase balance over the band. The differential outputs of active Balun are connected to balanced common source FETs and drive the balanced FETs in push-push configuration to generate second harmonics and reject fundamental and higher (odd) order harmonics. This creates a broadband frequency doubler with overlapping input and output frequencies, high conversion efficiency with good fundamental and higher odd harmonic rejection without any external Filter. The doubler work from -9 to +7 dBm. The output power of doubler is +17 to +18dBm in most of the band at Pin=+3dBm. Fundamental suppression is better than 50dBc to 34GHz and minimum 30dBc in the entire band. 3rd and 4th harmonic rejections are also better than 25dBc in most of the band. The phase noise of doubler is -137dBc/Hz at 100 kHz offset (fout=24GHz). The input return loss of doubler is better than 20dB in most of the band and output return loss varies from 10-15dB over the band. It works at Vd =4.5V, Id=100-225mA
{"title":"A High Performance 20-42 GHz MMIC Frequency Multiplier with Low Input Drive Power and High Output Power","authors":"S. Kumar, H. Morkner","doi":"10.1109/EMICC.2006.282701","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282701","url":null,"abstract":"A 20-42GHz output frequency GaAs MMIC frequency doubler chip has been developed that requires low input drive power and produces high output power with high fundamental & harmonic suppression without any external filter. This developed chip has an integrated broadband single ended-in to differential-out active Balun with impedance inverter and a broadband waveform shaping circuit. The unique topology of developed Balun helps to produce high voltage swing at differential outputs at low input drive power with excellent amplitude and phase balance over the band. The differential outputs of active Balun are connected to balanced common source FETs and drive the balanced FETs in push-push configuration to generate second harmonics and reject fundamental and higher (odd) order harmonics. This creates a broadband frequency doubler with overlapping input and output frequencies, high conversion efficiency with good fundamental and higher odd harmonic rejection without any external Filter. The doubler work from -9 to +7 dBm. The output power of doubler is +17 to +18dBm in most of the band at Pin=+3dBm. Fundamental suppression is better than 50dBc to 34GHz and minimum 30dBc in the entire band. 3rd and 4th harmonic rejections are also better than 25dBc in most of the band. The phase noise of doubler is -137dBc/Hz at 100 kHz offset (fout=24GHz). The input return loss of doubler is better than 20dB in most of the band and output return loss varies from 10-15dB over the band. It works at Vd =4.5V, Id=100-225mA","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125130380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282700
H. Mizutani, M. Tsuru, T. Matsuzuka, K. Choumei, K. Kawakami, M. Miyazaki
This paper presents a fully integrated highly linear and low phase noise voltage controlled oscillator (VCO) with a novel compact tuning voltage converter for millimeter-wave applications. The tuning voltage converter consists of only a few diodes and resistors and has nonlinear characteristics to correct varactor tuning curves. The authors fabricated the millimeter-wave VCO MMIC employing InGaP/GaAs HBT process. The MMIC chip size is 2.55 mm times 1.4 mm, in contrast the voltage converter has the size of 0.35 mm times 0.70 mm. The measured tuning sensitivity of 97 plusmn12 MHz/V is achieved for voltages between 0 V and 5 V, and the temperature dependency is very small. Also the phase noise performance is -110.7 dBc/Hz at 1MHz offset from the carrier when the oscillation frequency is 38.2 GHz. This linearization technique can greatly reduce the configuration of the conventional software linearization system
{"title":"A Millimeter-Wave Highly Linear VCO MMIC with Compact Tuning Voltage Converter","authors":"H. Mizutani, M. Tsuru, T. Matsuzuka, K. Choumei, K. Kawakami, M. Miyazaki","doi":"10.1109/EMICC.2006.282700","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282700","url":null,"abstract":"This paper presents a fully integrated highly linear and low phase noise voltage controlled oscillator (VCO) with a novel compact tuning voltage converter for millimeter-wave applications. The tuning voltage converter consists of only a few diodes and resistors and has nonlinear characteristics to correct varactor tuning curves. The authors fabricated the millimeter-wave VCO MMIC employing InGaP/GaAs HBT process. The MMIC chip size is 2.55 mm times 1.4 mm, in contrast the voltage converter has the size of 0.35 mm times 0.70 mm. The measured tuning sensitivity of 97 plusmn12 MHz/V is achieved for voltages between 0 V and 5 V, and the temperature dependency is very small. Also the phase noise performance is -110.7 dBc/Hz at 1MHz offset from the carrier when the oscillation frequency is 38.2 GHz. This linearization technique can greatly reduce the configuration of the conventional software linearization system","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131335775","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282809
G. Rafael-Valdivia, R. Brady, T. Brazil
In this work, a new Ids current equation and FET model are proposed based on DC and pulsed I/V measurements. Its implementation is based on the identification of a new function that characterizes the differences between dynamic and static conditions. The performance of the model was evaluated with scattering, DC and pulsed measurements on different kinds of devices. The results show good agreement for low-high power transistors
{"title":"New drain current model for MESFET/HEMT devices based on pulsed measurements","authors":"G. Rafael-Valdivia, R. Brady, T. Brazil","doi":"10.1109/EMICC.2006.282809","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282809","url":null,"abstract":"In this work, a new Ids current equation and FET model are proposed based on DC and pulsed I/V measurements. Its implementation is based on the identification of a new function that characterizes the differences between dynamic and static conditions. The performance of the model was evaluated with scattering, DC and pulsed measurements on different kinds of devices. The results show good agreement for low-high power transistors","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132636324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282805
A. Ådahl, H. Zirath
A new principle of a high efficiency active frequency multiplier is presented. High efficiency is achieved by operating the transistor in deep Class C by using a source RC-bias-network, forcing the conduction angle to be substantially less than 180deg. The principle can also be extended to balanced frequency multipliers for higher rejection of the fundamental frequency. The 'proof of concept' is demonstrated in a practical MMIC design. This design achieves, to our knowledge, the highest reported efficiency for a balanced frequency doubler, with high bandwidth
{"title":"A novel high purity, highly efficient, broadband MMIC frequency multiplier implemented in metamorphic HEMT technology","authors":"A. Ådahl, H. Zirath","doi":"10.1109/EMICC.2006.282805","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282805","url":null,"abstract":"A new principle of a high efficiency active frequency multiplier is presented. High efficiency is achieved by operating the transistor in deep Class C by using a source RC-bias-network, forcing the conduction angle to be substantially less than 180deg. The principle can also be extended to balanced frequency multipliers for higher rejection of the fundamental frequency. The 'proof of concept' is demonstrated in a practical MMIC design. This design achieves, to our knowledge, the highest reported efficiency for a balanced frequency doubler, with high bandwidth","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115452446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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