Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282806
K. Miyaguchi, M. Hieda, M. Hangai, T. Nishino, N. Yunoue, Y. Sasaki, M. Miyazaki
An ultra compact 5-bit MMIC phase shifter, operating in the C-band, is presented. The proposed phase shifting circuit utilizes the lumped-element all-pass network topology. The transition frequency of the all-pass network which determines the size of the circuit is set to be much higher than the operating bandwidth, which results in an extremely small chip size of the phase shifter in a relatively low frequency range. The MMIC phase shifter has been successfully fabricated with a die size of 1.72mm times 0.81mm (1.37mm2) and achieved a fractional bandwidth of 10%, demonstrating an insertion loss of 5.7 dB plusmn 0.8 dB and an RMS phase shift error of less than 2.3deg in the C-band. To our knowledge, the MMIC phase shifter is the smallest among the reported digital phase shifters which cover a total phase shift of 360deg for the C-band
提出了一种工作在c波段的超紧凑5位MMIC移相器。所提出的移相电路采用集总元全通网络拓扑结构。将决定电路尺寸的全通网络的过渡频率设置为远高于工作带宽，从而使移相器在相对较低的频率范围内具有极小的芯片尺寸。MMIC移相器的芯片尺寸为1.72mm × 0.81mm (1.37mm2)，其分数带宽为10%，插入损耗为5.7 dB + 0.8 dB, c波段的RMS移相误差小于2.3°。据我们所知，MMIC移相器是报道的数字移相器中最小的，它覆盖了c波段360度的总相移
{"title":"An Ultra Compact C-Band 5-Bit MMIC Phase Shifter Based on All-Pass Network","authors":"K. Miyaguchi, M. Hieda, M. Hangai, T. Nishino, N. Yunoue, Y. Sasaki, M. Miyazaki","doi":"10.1109/EMICC.2006.282806","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282806","url":null,"abstract":"An ultra compact 5-bit MMIC phase shifter, operating in the C-band, is presented. The proposed phase shifting circuit utilizes the lumped-element all-pass network topology. The transition frequency of the all-pass network which determines the size of the circuit is set to be much higher than the operating bandwidth, which results in an extremely small chip size of the phase shifter in a relatively low frequency range. The MMIC phase shifter has been successfully fabricated with a die size of 1.72mm times 0.81mm (1.37mm2) and achieved a fractional bandwidth of 10%, demonstrating an insertion loss of 5.7 dB plusmn 0.8 dB and an RMS phase shift error of less than 2.3deg in the C-band. To our knowledge, the MMIC phase shifter is the smallest among the reported digital phase shifters which cover a total phase shift of 360deg for the C-band","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133811470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282804
N. Poitrenaud, B. Lefebvre, S. Tranchant, M. Camiade
The design and performance of a compact packaged 5-30GHz variable attenuator are reported in this paper. Using a standard 4-inch 0.7mum GaAs power MESFET technology with BCB coating and backside metallization, these shunt-type packaged attenuator exhibits more than 25dB dynamic range, with a nominal insertion loss from 3 to 6dB over the 5-30GHz frequency band. Using multi-gates FETs and biasing voltage sequential control, input power compression of more than 25 to 30dBm is achieved. To allow a significant cost reduction for RF module assembly, this voltage attenuator MMIC is housed in a standard 16L-QFN3times3 SMD molded package. To the author's knowledge, these results show the highest linearity reported up to now for a voltage variable attenuator in a SMD package
本文介绍了一种紧凑封装的5-30GHz可变衰减器的设计和性能。采用标准的4英寸0.7 μ m GaAs功率MESFET技术，采用BCB涂层和背面金属化，这些并联型封装衰减器具有超过25dB的动态范围，在5-30GHz频段内标称插入损耗为3至6dB。采用多栅极场效应管和偏置电压顺序控制，可实现超过25 ~ 30dBm的输入功率压缩。为了显著降低射频模块组装成本，该电压衰减器MMIC被封装在标准的16L-QFN3times3 SMD模制封装中。据作者所知，这些结果显示了迄今为止SMD封装中电压可变衰减器的最高线性度
{"title":"A Novel 5-30GHz Voltage Controlled Variable Attenuator with High Linearity in a Low Cost SMD Compact Package","authors":"N. Poitrenaud, B. Lefebvre, S. Tranchant, M. Camiade","doi":"10.1109/EMICC.2006.282804","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282804","url":null,"abstract":"The design and performance of a compact packaged 5-30GHz variable attenuator are reported in this paper. Using a standard 4-inch 0.7mum GaAs power MESFET technology with BCB coating and backside metallization, these shunt-type packaged attenuator exhibits more than 25dB dynamic range, with a nominal insertion loss from 3 to 6dB over the 5-30GHz frequency band. Using multi-gates FETs and biasing voltage sequential control, input power compression of more than 25 to 30dBm is achieved. To allow a significant cost reduction for RF module assembly, this voltage attenuator MMIC is housed in a standard 16L-QFN3times3 SMD molded package. To the author's knowledge, these results show the highest linearity reported up to now for a voltage variable attenuator in a SMD package","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133471453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EUMC.2006.281472
J. Wurfl, R. Behtash, R. Lossy, A. Liero, W. Heinrich, G. Trankle, K. Hirche, G. Fischer
Progress in fabrication of packaged discrete L- and X-band power AlGaN/GaN HFETs is presented. By exploiting typical GaN HFET related features such as improved linearity, power density, gain and broad band capability the devices allow for novel architectures for base stations in mobile communications and for space applications. Highlights to be presented are L-band power bar devices designed for continuous wave (cw) operation delivering an cw output power of 30 W and 100 W with 20 dB and 14 dB linear gain respectively. The architecture of these devices is based on novel gate "feed plate" structures. Furthermore discrete, hermetically packaged X-band devices for space based SSPAs in the power range of 10 W (continuous wave) at 8 GHz are presented
{"title":"Advances in GaN-based discrete power devices for L- and X-band applications","authors":"J. Wurfl, R. Behtash, R. Lossy, A. Liero, W. Heinrich, G. Trankle, K. Hirche, G. Fischer","doi":"10.1109/EUMC.2006.281472","DOIUrl":"https://doi.org/10.1109/EUMC.2006.281472","url":null,"abstract":"Progress in fabrication of packaged discrete L- and X-band power AlGaN/GaN HFETs is presented. By exploiting typical GaN HFET related features such as improved linearity, power density, gain and broad band capability the devices allow for novel architectures for base stations in mobile communications and for space applications. Highlights to be presented are L-band power bar devices designed for continuous wave (cw) operation delivering an cw output power of 30 W and 100 W with 20 dB and 14 dB linear gain respectively. The architecture of these devices is based on novel gate \"feed plate\" structures. Furthermore discrete, hermetically packaged X-band devices for space based SSPAs in the power range of 10 W (continuous wave) at 8 GHz are presented","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123672669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282815
A. Lázaro, B. Iñíguez
We present a new model for single-gate (SG) SOI, cylindrical undoped (lightly doped) gate-all-around (GAA) or surrounding gate (SGT) MOSFETs and double gate fully depleted silicon-on-insulator (DG SOI) for DC, RF and noise modeling. Using this model, the single-gate, GAA and DG analog and noise performances are compared
{"title":"RF and Noise Performance of Multiple-Gate SOI MOSFETs","authors":"A. Lázaro, B. Iñíguez","doi":"10.1109/EMICC.2006.282815","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282815","url":null,"abstract":"We present a new model for single-gate (SG) SOI, cylindrical undoped (lightly doped) gate-all-around (GAA) or surrounding gate (SGT) MOSFETs and double gate fully depleted silicon-on-insulator (DG SOI) for DC, RF and noise modeling. Using this model, the single-gate, GAA and DG analog and noise performances are compared","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129132848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282743
P. Helisto, A. Luukanen, L. Gronberg, J. Penttila, H. Seppa, H. Sipola, C. Dietlein, E. Grossman
In the recent years, millimetre wave and THz imaging have received a vast amount of interest due to the interesting possibilities and applications that imaging at these frequencies could enable. Many of the applications that have generated substantial interest (such as stand-off concealed weapons detection) often require exquisite sensitivity, while a low system cost is required. In this paper we discuss one potential candidate for affordable imaging arrays: an antenna-coupled superconducting microbolometer. We show that these devices possess capabilities that are hard to meet with other passive detection schemes. While refrigeration to cryogenic temperatures is required for maximum performance, we show that the devices can be operated within a cryogen-free refrigerator that allows for turn-key operation. Comparison with other detectors is presented
{"title":"Antenna-coupled microbolometers for passive THz direct detection imaging arrays","authors":"P. Helisto, A. Luukanen, L. Gronberg, J. Penttila, H. Seppa, H. Sipola, C. Dietlein, E. Grossman","doi":"10.1109/EMICC.2006.282743","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282743","url":null,"abstract":"In the recent years, millimetre wave and THz imaging have received a vast amount of interest due to the interesting possibilities and applications that imaging at these frequencies could enable. Many of the applications that have generated substantial interest (such as stand-off concealed weapons detection) often require exquisite sensitivity, while a low system cost is required. In this paper we discuss one potential candidate for affordable imaging arrays: an antenna-coupled superconducting microbolometer. We show that these devices possess capabilities that are hard to meet with other passive detection schemes. While refrigeration to cryogenic temperatures is required for maximum performance, we show that the devices can be operated within a cryogen-free refrigerator that allows for turn-key operation. Comparison with other detectors is presented","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132065976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282735
L. Bednarz, Rashmi, G. Farhi, B. Hackens, V. Bayot, I. Huynen
The problem of high input impedance of nanoscaled devices is analyzed for the case of a Y-Branch Junction. An electrical nonlinear model of YBJs validated on measured data is used to show influence of source impedance on HF to DC detection performance in YBJ. An impedance matching network is proposed and is proven to increase the detection sensitivity. Multiple 2DEG channels material used to fabricate parallel YBJ's stacked on one another is also proposed as an alternative solution to mismatch problem. It is shown that using multiple 2DEG the input impedance and reflection coefficient can be decreased but at the price of decrease in sensitivity
{"title":"Solutions for input impedance matching of nanodevices: Application to Y-Branch Junction HF to DC rectifier","authors":"L. Bednarz, Rashmi, G. Farhi, B. Hackens, V. Bayot, I. Huynen","doi":"10.1109/EMICC.2006.282735","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282735","url":null,"abstract":"The problem of high input impedance of nanoscaled devices is analyzed for the case of a Y-Branch Junction. An electrical nonlinear model of YBJs validated on measured data is used to show influence of source impedance on HF to DC detection performance in YBJ. An impedance matching network is proposed and is proven to increase the detection sensitivity. Multiple 2DEG channels material used to fabricate parallel YBJ's stacked on one another is also proposed as an alternative solution to mismatch problem. It is shown that using multiple 2DEG the input impedance and reflection coefficient can be decreased but at the price of decrease in sensitivity","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130757335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282679
H. Chua, P. Curtis, W. Tong, Z.R. Hu, A. Gibson, M. Missous
Super compact multilayer broadband left-handed (LH) metamaterials medium for RF/MMIC applications have been previously proposed and demonstrated by full wave and equivalent circuit analysis (Tong and Hu, 2005 and Horii et al., 2005). From references (Tong and Hu, 2005 and Horii et al., 2005), LH metamaterials have the potential to miniaturise circuits for low frequency applications. In this paper, we propose an integrated unit cell and transmission line, which has the advantages of simpler fabrication, convenient probe contactability and the potential integrates with MMIC technology. LH unit cell circuits have been developed, and the simulation and measurement results are presented. The miniaturised LH transmission line is also developed and the simulation and measurement results are presented
先前已经提出并通过全波和等效电路分析证明了用于RF/MMIC应用的超紧凑多层宽带左手(LH)超材料介质(Tong和Hu, 2005和Horii等人，2005)。根据文献(Tong and Hu, 2005, Horii et al.， 2005)， LH超材料具有将低频电路小型化的潜力。本文提出了一种集成单元电池和传输线的方案，该方案具有制作简单、探头接触方便、与MMIC技术集成的潜力等优点。研制了LH单元电路，并给出了仿真和测量结果。研制了小型化的LH传输线，并给出了仿真和测量结果
{"title":"Integrated Left-Handed Metamaterials on MMIC Technology","authors":"H. Chua, P. Curtis, W. Tong, Z.R. Hu, A. Gibson, M. Missous","doi":"10.1109/EMICC.2006.282679","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282679","url":null,"abstract":"Super compact multilayer broadband left-handed (LH) metamaterials medium for RF/MMIC applications have been previously proposed and demonstrated by full wave and equivalent circuit analysis (Tong and Hu, 2005 and Horii et al., 2005). From references (Tong and Hu, 2005 and Horii et al., 2005), LH metamaterials have the potential to miniaturise circuits for low frequency applications. In this paper, we propose an integrated unit cell and transmission line, which has the advantages of simpler fabrication, convenient probe contactability and the potential integrates with MMIC technology. LH unit cell circuits have been developed, and the simulation and measurement results are presented. The miniaturised LH transmission line is also developed and the simulation and measurement results are presented","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127206228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282741
T. Ashley, L. Buckle, M. Emeny, M. Fearn, D. Hayes, K. Hilton, R. Jefferies, T. Martin, T. Phillips, J. Powell, A. Tang, D. Wallis, P. Wilding
Indium antimonide has the highest electron mobility and saturation velocity of any semiconductor, so has potential for ultra-high frequency operation with very low power dissipation. Unoptimised, uncooled quantum well heterojunction FETs, with gate length of 85nm, that have a cutoff frequency of 340GHz at only 0.5 V Vds. The prospects of this technology for future microwave applications in excess of 100GHz are shown to be very promising
锑化铟具有半导体中最高的电子迁移率和饱和速度，因此具有超低功耗的超高频工作潜力。非优化、非冷却量子阱异质结场效应管，栅极长度为85nm，在0.5 V Vds下截止频率为340GHz。该技术在未来超过100GHz的微波应用中显示出非常有前景
{"title":"Indium Antimonide based Quantum Well FETs for Ultra-high Frequency, Low Power Dissipation Circuits","authors":"T. Ashley, L. Buckle, M. Emeny, M. Fearn, D. Hayes, K. Hilton, R. Jefferies, T. Martin, T. Phillips, J. Powell, A. Tang, D. Wallis, P. Wilding","doi":"10.1109/EMICC.2006.282741","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282741","url":null,"abstract":"Indium antimonide has the highest electron mobility and saturation velocity of any semiconductor, so has potential for ultra-high frequency operation with very low power dissipation. Unoptimised, uncooled quantum well heterojunction FETs, with gate length of 85nm, that have a cutoff frequency of 340GHz at only 0.5 V Vds. The prospects of this technology for future microwave applications in excess of 100GHz are shown to be very promising","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126739580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282671
O. Esame, I. Tekin, Y. Gurbuz
In this paper, design and realization of a 4.5-5.8 GHz, -Gm LC voltage controlled oscillator (VCO) for IEEE 802.11a standard is presented. The circuit is implemented with AMS 0.35μm-SiGe BiCMOS process that includes high-speed SiGe heterojunction bipolar transistors (HBTs). A linear, 1300 MHz tuning range is measured with on-chip, accumulation-mode varactors. Fundamental frequency output power changes between -1.6 dBm and 0.9 dBm, depending on the tuning voltage. The circuit draws 17 mA from 3.3 V supply, including buffer circuits. Post-layout simulations of the VCO led to -110.7 dBc/Hz at 1MHz offset from 5.4 GHz carrier frequency and -113.4 dBc/Hz from 4.2 GHz carrier frequency of phase noise. The circuit occupies an area of 0.6 mm2, including RF and DC pads
{"title":"A 4.5-5.8 GHz Differential LC VCO using 0.35 μm SiGe BiCMOS Technology","authors":"O. Esame, I. Tekin, Y. Gurbuz","doi":"10.1109/EMICC.2006.282671","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282671","url":null,"abstract":"In this paper, design and realization of a 4.5-5.8 GHz, -Gm LC voltage controlled oscillator (VCO) for IEEE 802.11a standard is presented. The circuit is implemented with AMS 0.35μm-SiGe BiCMOS process that includes high-speed SiGe heterojunction bipolar transistors (HBTs). A linear, 1300 MHz tuning range is measured with on-chip, accumulation-mode varactors. Fundamental frequency output power changes between -1.6 dBm and 0.9 dBm, depending on the tuning voltage. The circuit draws 17 mA from 3.3 V supply, including buffer circuits. Post-layout simulations of the VCO led to -110.7 dBc/Hz at 1MHz offset from 5.4 GHz carrier frequency and -113.4 dBc/Hz from 4.2 GHz carrier frequency of phase noise. The circuit occupies an area of 0.6 mm2, including RF and DC pads","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128199199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282791
I. Angelov, M. Feradahl, F. Ingvarson, H. Zirath, H. Vickes
A compact large-signal model (LS) for high frequency CMOS transistors is proposed and experimentally evaluated with DC, S-parameter, power spectrum measurements and load pool measurements. Very good correspondences between measurements on 90 nm CMOS FETs and simulations were achieved. Due to the low number of model parameters and the careful selection of model equations, the model exhibits excellent convergence behavior, a property important for successful nonlinear circuit simulation of RF circuits. The LS model was extended to model the RF noise and implemented in commercial CAD tool and shows a good correspondence between the measurements and the model
{"title":"CMOS Large Signal and RF Noise Model for CAD","authors":"I. Angelov, M. Feradahl, F. Ingvarson, H. Zirath, H. Vickes","doi":"10.1109/EMICC.2006.282791","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282791","url":null,"abstract":"A compact large-signal model (LS) for high frequency CMOS transistors is proposed and experimentally evaluated with DC, S-parameter, power spectrum measurements and load pool measurements. Very good correspondences between measurements on 90 nm CMOS FETs and simulations were achieved. Due to the low number of model parameters and the careful selection of model equations, the model exhibits excellent convergence behavior, a property important for successful nonlinear circuit simulation of RF circuits. The LS model was extended to model the RF noise and implemented in commercial CAD tool and shows a good correspondence between the measurements and the model","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114083783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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