Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282807
H. Kamitsuna, Y. Yamane, M. Tokumitsu, H. Sugahara, T. Enoki
An 8times8 switch matrix MMIC using cold-FET SP8T switches is presented. InP HEMTs with a low RonmiddotCoff product enable us to construct a dc-to-over-10-GHz SP8T switch in a series configuration. The multilayer interconnection with top-metal- and dielectric-layer thickness of 5 mum allows us to configure interconnection transmission lines quite compactly, which is essential for wideband operation. The switch matrix IC using these technologies with a novel size-reduction technique is as small as 0.4 mm2 (core area) and achieves low insertion loss (<3.9 dB) and high isolation (>26.5 dB) below 10 GHz. We confirmed error-free operation up to 12.5 Gbit/s with good eye openings even when eight data signals are simultaneously input to the switch IC
{"title":"An 8×8 Switch Matrix MMIC Integrating Eight InP-HEMT SP8T Switches for 10-Gbit/s Systems","authors":"H. Kamitsuna, Y. Yamane, M. Tokumitsu, H. Sugahara, T. Enoki","doi":"10.1109/EMICC.2006.282807","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282807","url":null,"abstract":"An 8times8 switch matrix MMIC using cold-FET SP8T switches is presented. InP HEMTs with a low RonmiddotCoff product enable us to construct a dc-to-over-10-GHz SP8T switch in a series configuration. The multilayer interconnection with top-metal- and dielectric-layer thickness of 5 mum allows us to configure interconnection transmission lines quite compactly, which is essential for wideband operation. The switch matrix IC using these technologies with a novel size-reduction technique is as small as 0.4 mm2 (core area) and achieves low insertion loss (<3.9 dB) and high isolation (>26.5 dB) below 10 GHz. We confirmed error-free operation up to 12.5 Gbit/s with good eye openings even when eight data signals are simultaneously input to the switch IC","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121660123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282765
M. Kelly, I. Angelov, J. P. Starski, N. Wadefalk, H. Zirath
This paper describes two metamorphic high electron mobility transistor (mHEMT) amplifiers with low noise in the frequency band 4-8 GHz. One amplifier contains the complete circuitry on a monolithic microwave integrated circuit (MMIC) chip and the other is configured with the input network on a low loss duroid substate together with an MMIC. The measurements at room temperature for the MMIC gave a gain of 28plusmn1 dB and a typical noise temperature of 56 K. The measurements at room temperature for the hybrid-MMIC gave a gain of 29plusmn2 dB and a minimum noise temperature of 41 K. When cooled to 20 K the hybrid-MMIC obtained a minimum noise temperature of 6 K. The hybrid-MMIC is compared to InP based hybrid LNAs at cryogenic temperature
{"title":"4-8 GHz Low Noise Amplifiers using metamorphic HEMT Technology","authors":"M. Kelly, I. Angelov, J. P. Starski, N. Wadefalk, H. Zirath","doi":"10.1109/EMICC.2006.282765","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282765","url":null,"abstract":"This paper describes two metamorphic high electron mobility transistor (mHEMT) amplifiers with low noise in the frequency band 4-8 GHz. One amplifier contains the complete circuitry on a monolithic microwave integrated circuit (MMIC) chip and the other is configured with the input network on a low loss duroid substate together with an MMIC. The measurements at room temperature for the MMIC gave a gain of 28plusmn1 dB and a typical noise temperature of 56 K. The measurements at room temperature for the hybrid-MMIC gave a gain of 29plusmn2 dB and a minimum noise temperature of 41 K. When cooled to 20 K the hybrid-MMIC obtained a minimum noise temperature of 6 K. The hybrid-MMIC is compared to InP based hybrid LNAs at cryogenic temperature","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131633692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282803
P. Gilabert, D. Silveira, G. Montoro, G. Magerl
This paper presents the black-box modeling of a microwave power amplifier (PA) operating near saturation and the performance of a modular predistortion model designed for this PA. A 16-QAM modulation scheme has been used as input signal. Nonlinearities caused by the amplifier operating at low input back-off (IBO), that is close to compression, can change the output constellation and lead to difficulties in finding the correct model parameters since the black-box identification procedure is based on measured input/output signals. A segment of the input/output measurement data is processed to generate an initial model. Then pseudo-inverse techniques are used to find a parsimonious Wiener model that is cross-validated with the entire measurement data. The presented modeling approach results in a model intended to be numerically robust and having a high identification percentage based on the normalized mean squared error (NMSE) figure of merit. Once the PA model is obtained, a Hammerstein based predistorter (HPD) is estimated by means of the indirect learning approach (PA input-output measured data). Simulation and experimental results are provided in order to show linearity improvement achieved by this HPD. In band and out of band distortion compensation are measured in terms of adjacent channel power ratio (ACPR) and error vector magnitude (EVM) reduction
{"title":"RF-Power Amplifier Modeling and Predistortion Based on a Modular Approach","authors":"P. Gilabert, D. Silveira, G. Montoro, G. Magerl","doi":"10.1109/EMICC.2006.282803","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282803","url":null,"abstract":"This paper presents the black-box modeling of a microwave power amplifier (PA) operating near saturation and the performance of a modular predistortion model designed for this PA. A 16-QAM modulation scheme has been used as input signal. Nonlinearities caused by the amplifier operating at low input back-off (IBO), that is close to compression, can change the output constellation and lead to difficulties in finding the correct model parameters since the black-box identification procedure is based on measured input/output signals. A segment of the input/output measurement data is processed to generate an initial model. Then pseudo-inverse techniques are used to find a parsimonious Wiener model that is cross-validated with the entire measurement data. The presented modeling approach results in a model intended to be numerically robust and having a high identification percentage based on the normalized mean squared error (NMSE) figure of merit. Once the PA model is obtained, a Hammerstein based predistorter (HPD) is estimated by means of the indirect learning approach (PA input-output measured data). Simulation and experimental results are provided in order to show linearity improvement achieved by this HPD. In band and out of band distortion compensation are measured in terms of adjacent channel power ratio (ACPR) and error vector magnitude (EVM) reduction","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128118656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282693
S. DiNardo, P. Farinelli, F. Giacomozzi, G. Mannocchi, R. Marcelli, B. Margesin, P. Mezzanotte, V. Million, P. Russer, R. Sorrentino, F. Vitulli, L. Vietzorreck
A broadband single pole double throw (SPDT) switch has been developed for use in the range of 0 to 30 GHz. The switch consists of a cascade of a MEMS ohmic series and a capaci-tive shunt switch with floating electrode in each branch. It is manufactured on high-resistive silicon using surface micro-machining technology. The SPDT switch provides an insertion loss better than -0.6 dB, return loss smaller than -20dB, and isolation better than -40 dB in nearly the whole band. A switching voltage around 50 V is needed. The switch is used as a building block for more complex switching networks. The fabrication process is described and the measured RF-performances are reported and discussed. A failure analysis exhibits a lifetime up to 109 actuations
{"title":"Broadband RF-MEMS Based SPDT","authors":"S. DiNardo, P. Farinelli, F. Giacomozzi, G. Mannocchi, R. Marcelli, B. Margesin, P. Mezzanotte, V. Million, P. Russer, R. Sorrentino, F. Vitulli, L. Vietzorreck","doi":"10.1109/EMICC.2006.282693","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282693","url":null,"abstract":"A broadband single pole double throw (SPDT) switch has been developed for use in the range of 0 to 30 GHz. The switch consists of a cascade of a MEMS ohmic series and a capaci-tive shunt switch with floating electrode in each branch. It is manufactured on high-resistive silicon using surface micro-machining technology. The SPDT switch provides an insertion loss better than -0.6 dB, return loss smaller than -20dB, and isolation better than -40 dB in nearly the whole band. A switching voltage around 50 V is needed. The switch is used as a building block for more complex switching networks. The fabrication process is described and the measured RF-performances are reported and discussed. A failure analysis exhibits a lifetime up to 109 actuations","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132555617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282758
S. Marsh, B. Alderman, D. Matheson, P. D. de Maagt
This paper describes the computer aided design techniques used to design millimeter-wave mixer components for potentially high volume applications such as medical and security screening and non-destructive testing. These are demonstrated by the design of a 183GHz subharmonic mixer for earth observation applications. Using commercially available foundry diodes, the mixer exhibits 6.85dB double side-band conversion loss and a mixer temperature of 988 Kelvin using 5mW of local oscillator power at 92GHz. The subharmonic mixer is designed as a fixed tuned component with the least number of parts to minimize the cost and maximize its potential for volume manufacture
{"title":"CAD Techniques for 183GHz Fixed Tuned Sub-Harmonic Mixer Using Foundry Diodes","authors":"S. Marsh, B. Alderman, D. Matheson, P. D. de Maagt","doi":"10.1109/EMICC.2006.282758","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282758","url":null,"abstract":"This paper describes the computer aided design techniques used to design millimeter-wave mixer components for potentially high volume applications such as medical and security screening and non-destructive testing. These are demonstrated by the design of a 183GHz subharmonic mixer for earth observation applications. Using commercially available foundry diodes, the mixer exhibits 6.85dB double side-band conversion loss and a mixer temperature of 988 Kelvin using 5mW of local oscillator power at 92GHz. The subharmonic mixer is designed as a fixed tuned component with the least number of parts to minimize the cost and maximize its potential for volume manufacture","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132637382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282772
J. V. Siles, J. Grajal, V. Krozer
This work represents a further step to establish a physical numerical CAD tool for the design of Schottky-diode based MMIC circuits for millimetre-wave and terahertz applications. This software has shown very good capabilities for the design and optimization of Schottky multipliers and fundamental mixers with good agreement with measurements. The tool allows the concurrent optimization of the semiconductor device and the external circuit. The additional functionality presented in this paper consists of the design of subharmonically-pumped (SHP) GaAs Schottky diode mixers. Thus, a realistic prediction regarding LO power requirements, influence of parasitics, optimum input and output matching networks and mixer performance can be obtained prior to fabrication avoiding costly redesigns. A 400 GHz antiparallel-diode pair SHP mixer have been designed and optimized. State-of-the-art conversion losses are predicted for this SHP mixer
{"title":"Design of Subharmonically Pumped Schottky Mixers for Submillimetre-wave Applications","authors":"J. V. Siles, J. Grajal, V. Krozer","doi":"10.1109/EMICC.2006.282772","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282772","url":null,"abstract":"This work represents a further step to establish a physical numerical CAD tool for the design of Schottky-diode based MMIC circuits for millimetre-wave and terahertz applications. This software has shown very good capabilities for the design and optimization of Schottky multipliers and fundamental mixers with good agreement with measurements. The tool allows the concurrent optimization of the semiconductor device and the external circuit. The additional functionality presented in this paper consists of the design of subharmonically-pumped (SHP) GaAs Schottky diode mixers. Thus, a realistic prediction regarding LO power requirements, influence of parasitics, optimum input and output matching networks and mixer performance can be obtained prior to fabrication avoiding costly redesigns. A 400 GHz antiparallel-diode pair SHP mixer have been designed and optimized. State-of-the-art conversion losses are predicted for this SHP mixer","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132432101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282778
P. Upadhyaya, D. Heo, Y. Chen
A 2 GHz quadrature CMOS LC voltage controlled oscillator (VCO) has been designed in a standard 0.18-mum SiGe-BiCMOS process for direct conversion transceiver. Consuming total 8.5 mA of current from a 1.3 V power supply, the quadrature VCO achieves a measured single-sideband phase noise of -120 dBc/Hz at 1.0 MHz offset frequency. The VCO achieves -3 dBm of carrier power to a 50-ohm load and tuning range of 300 MHz to meet requirements for the WCDMA standard. Series-coupled technique for achieving quadrature phase lock with low phase error (< 0.6deg) and low phase noise is presented
{"title":"A 1.3V Low Phase Noise 2-GHz CMOS Quadrature LC VCO","authors":"P. Upadhyaya, D. Heo, Y. Chen","doi":"10.1109/EMICC.2006.282778","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282778","url":null,"abstract":"A 2 GHz quadrature CMOS LC voltage controlled oscillator (VCO) has been designed in a standard 0.18-mum SiGe-BiCMOS process for direct conversion transceiver. Consuming total 8.5 mA of current from a 1.3 V power supply, the quadrature VCO achieves a measured single-sideband phase noise of -120 dBc/Hz at 1.0 MHz offset frequency. The VCO achieves -3 dBm of carrier power to a 50-ohm load and tuning range of 300 MHz to meet requirements for the WCDMA standard. Series-coupled technique for achieving quadrature phase lock with low phase error (< 0.6deg) and low phase noise is presented","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":"153 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133458986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282697
A. Bessemoulin, M. G. McCulloch, A. Alexander, D. Mccann, S. Mahon, J. Harvey
The performance of a compact K-band power amplifier MMIC fabricated in standard 6-inch 0.15-mum GaAs power PHEMT technology is reported. The circuit features on-chip ESD protection including input short-circuit stub, dual capacitors at RF ports and high-current diode arrays on each gate pad. Occupying less than 3 mm2, this 3-stage power amplifier achieves a linear gain of more than 20-dB over the 17 to 24 GHz frequency range with 6-dB noise figure. It also delivers a CW output power of more than 29-and 30-dBm, in the 17-20 GHz band, at 5- and 6-V respectively. Preliminary ESD characterization shows the circuit withstands 180-V in human body model test (tester limit), and 100-V machine model (equivalent to at least 500-V HBM), without DC or RF performance degradation. Finally, performance in standard 24-lead plastic QFN package (4times4 mm2) is presented: the device exhibits more than 17.5-dB linear gain over 17-24 GHz, with P-.1dB greater than 28-dBm in the 17.7-19.7 GHz radio range
报道了采用标准6英寸0.15 μ m GaAs功率PHEMT技术制作的紧凑型k波段功率放大器MMIC的性能。该电路具有片内ESD保护功能，包括输入短路存根、射频端口的双电容和每个门垫上的大电流二极管阵列。这款3级功率放大器占地面积小于3平方毫米，在17至24 GHz频率范围内实现了超过20 db的线性增益，噪声系数为6 db。它还在17-20 GHz频段分别以5- v和6-V提供超过29和30 dbm的连续波输出功率。初步的ESD特性表明，该电路在人体模型测试(测试仪极限)和100 v机器模型测试(至少相当于500 v HBM)中承受180 v，没有DC或RF性能下降。最后，介绍了标准24引脚塑料QFN封装(4times4 mm2)的性能:该器件在17-24 GHz范围内具有17.5 db以上的线性增益，P-。在17.7-19.7 GHz无线电范围内，比28dbm大1dB
{"title":"Compact K-band Watt-level GaAs PHEMT Power Amplifier MMIC with integrated ESD protection","authors":"A. Bessemoulin, M. G. McCulloch, A. Alexander, D. Mccann, S. Mahon, J. Harvey","doi":"10.1109/EMICC.2006.282697","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282697","url":null,"abstract":"The performance of a compact K-band power amplifier MMIC fabricated in standard 6-inch 0.15-mum GaAs power PHEMT technology is reported. The circuit features on-chip ESD protection including input short-circuit stub, dual capacitors at RF ports and high-current diode arrays on each gate pad. Occupying less than 3 mm2, this 3-stage power amplifier achieves a linear gain of more than 20-dB over the 17 to 24 GHz frequency range with 6-dB noise figure. It also delivers a CW output power of more than 29-and 30-dBm, in the 17-20 GHz band, at 5- and 6-V respectively. Preliminary ESD characterization shows the circuit withstands 180-V in human body model test (tester limit), and 100-V machine model (equivalent to at least 500-V HBM), without DC or RF performance degradation. Finally, performance in standard 24-lead plastic QFN package (4times4 mm2) is presented: the device exhibits more than 17.5-dB linear gain over 17-24 GHz, with P-.1dB greater than 28-dBm in the 17.7-19.7 GHz radio range","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":"189 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117319597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282656
R. Sakai, M. Uchida, G. Araki
We studied an InGaAs epitaxial layers growth by metalorganic chemical vapor deposition (MOCVD) for InP-based high electron mobility transistors (HEMTs). The InGaAs channel layer of HEMTs was grown by a new material combination of triethylindium (TEI), triethylgallium (TEG) and arsine (AsH3). An electron mobility of the HEMTs structure sample was 20% higher than the one grown by trimethylindium (TMI), TEG and AsH3. And the DC characteristics of the HEMTs, the drain current and transconductance, were increased compared with the one. It is confirmed that this growth method is quite effective for the improvement of a characteristics of InP-based HEMTs
{"title":"Studies of InGaAs layers growth by metalorganic chemical vapor deposition for InP-HEMTs; Effects of trimethylindium and triethylindium","authors":"R. Sakai, M. Uchida, G. Araki","doi":"10.1109/EMICC.2006.282656","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282656","url":null,"abstract":"We studied an InGaAs epitaxial layers growth by metalorganic chemical vapor deposition (MOCVD) for InP-based high electron mobility transistors (HEMTs). The InGaAs channel layer of HEMTs was grown by a new material combination of triethylindium (TEI), triethylgallium (TEG) and arsine (AsH3). An electron mobility of the HEMTs structure sample was 20% higher than the one grown by trimethylindium (TMI), TEG and AsH3. And the DC characteristics of the HEMTs, the drain current and transconductance, were increased compared with the one. It is confirmed that this growth method is quite effective for the improvement of a characteristics of InP-based HEMTs","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115563408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282657
B. Benbakhti, M. Rousseau, J. De Jaeger
Field plate AlGaN/GaN HEMT (high electron mobility transistor) structures, are very promising to improve the microwave power performance. This device permits to improve the breakdown voltage but the field plate (FP) electrode involves an increase of the parasitic capacitances and consequently a drop of the current gain transition frequency. So a compromise must be found depending on the operating frequency. In this paper, a theoretical 2D-hydrodynamic model is developed to study the impact of the FP on the device performance
{"title":"Study of Field Plate AlGaN/GaN HEMTs by Means of a 2D-Hydrdynamic Model for Power Applications","authors":"B. Benbakhti, M. Rousseau, J. De Jaeger","doi":"10.1109/EMICC.2006.282657","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282657","url":null,"abstract":"Field plate AlGaN/GaN HEMT (high electron mobility transistor) structures, are very promising to improve the microwave power performance. This device permits to improve the breakdown voltage but the field plate (FP) electrode involves an increase of the parasitic capacitances and consequently a drop of the current gain transition frequency. So a compromise must be found depending on the operating frequency. In this paper, a theoretical 2D-hydrodynamic model is developed to study the impact of the FP on the device performance","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116685234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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