Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282807
H. Kamitsuna, Y. Yamane, M. Tokumitsu, H. Sugahara, T. Enoki
An 8times8 switch matrix MMIC using cold-FET SP8T switches is presented. InP HEMTs with a low RonmiddotCoff product enable us to construct a dc-to-over-10-GHz SP8T switch in a series configuration. The multilayer interconnection with top-metal- and dielectric-layer thickness of 5 mum allows us to configure interconnection transmission lines quite compactly, which is essential for wideband operation. The switch matrix IC using these technologies with a novel size-reduction technique is as small as 0.4 mm2 (core area) and achieves low insertion loss (<3.9 dB) and high isolation (>26.5 dB) below 10 GHz. We confirmed error-free operation up to 12.5 Gbit/s with good eye openings even when eight data signals are simultaneously input to the switch IC
{"title":"An 8×8 Switch Matrix MMIC Integrating Eight InP-HEMT SP8T Switches for 10-Gbit/s Systems","authors":"H. Kamitsuna, Y. Yamane, M. Tokumitsu, H. Sugahara, T. Enoki","doi":"10.1109/EMICC.2006.282807","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282807","url":null,"abstract":"An 8times8 switch matrix MMIC using cold-FET SP8T switches is presented. InP HEMTs with a low RonmiddotCoff product enable us to construct a dc-to-over-10-GHz SP8T switch in a series configuration. The multilayer interconnection with top-metal- and dielectric-layer thickness of 5 mum allows us to configure interconnection transmission lines quite compactly, which is essential for wideband operation. The switch matrix IC using these technologies with a novel size-reduction technique is as small as 0.4 mm2 (core area) and achieves low insertion loss (<3.9 dB) and high isolation (>26.5 dB) below 10 GHz. We confirmed error-free operation up to 12.5 Gbit/s with good eye openings even when eight data signals are simultaneously input to the switch IC","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121660123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282765
M. Kelly, I. Angelov, J. P. Starski, N. Wadefalk, H. Zirath
This paper describes two metamorphic high electron mobility transistor (mHEMT) amplifiers with low noise in the frequency band 4-8 GHz. One amplifier contains the complete circuitry on a monolithic microwave integrated circuit (MMIC) chip and the other is configured with the input network on a low loss duroid substate together with an MMIC. The measurements at room temperature for the MMIC gave a gain of 28plusmn1 dB and a typical noise temperature of 56 K. The measurements at room temperature for the hybrid-MMIC gave a gain of 29plusmn2 dB and a minimum noise temperature of 41 K. When cooled to 20 K the hybrid-MMIC obtained a minimum noise temperature of 6 K. The hybrid-MMIC is compared to InP based hybrid LNAs at cryogenic temperature
{"title":"4-8 GHz Low Noise Amplifiers using metamorphic HEMT Technology","authors":"M. Kelly, I. Angelov, J. P. Starski, N. Wadefalk, H. Zirath","doi":"10.1109/EMICC.2006.282765","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282765","url":null,"abstract":"This paper describes two metamorphic high electron mobility transistor (mHEMT) amplifiers with low noise in the frequency band 4-8 GHz. One amplifier contains the complete circuitry on a monolithic microwave integrated circuit (MMIC) chip and the other is configured with the input network on a low loss duroid substate together with an MMIC. The measurements at room temperature for the MMIC gave a gain of 28plusmn1 dB and a typical noise temperature of 56 K. The measurements at room temperature for the hybrid-MMIC gave a gain of 29plusmn2 dB and a minimum noise temperature of 41 K. When cooled to 20 K the hybrid-MMIC obtained a minimum noise temperature of 6 K. The hybrid-MMIC is compared to InP based hybrid LNAs at cryogenic temperature","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131633692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282803
P. Gilabert, D. Silveira, G. Montoro, G. Magerl
This paper presents the black-box modeling of a microwave power amplifier (PA) operating near saturation and the performance of a modular predistortion model designed for this PA. A 16-QAM modulation scheme has been used as input signal. Nonlinearities caused by the amplifier operating at low input back-off (IBO), that is close to compression, can change the output constellation and lead to difficulties in finding the correct model parameters since the black-box identification procedure is based on measured input/output signals. A segment of the input/output measurement data is processed to generate an initial model. Then pseudo-inverse techniques are used to find a parsimonious Wiener model that is cross-validated with the entire measurement data. The presented modeling approach results in a model intended to be numerically robust and having a high identification percentage based on the normalized mean squared error (NMSE) figure of merit. Once the PA model is obtained, a Hammerstein based predistorter (HPD) is estimated by means of the indirect learning approach (PA input-output measured data). Simulation and experimental results are provided in order to show linearity improvement achieved by this HPD. In band and out of band distortion compensation are measured in terms of adjacent channel power ratio (ACPR) and error vector magnitude (EVM) reduction
{"title":"RF-Power Amplifier Modeling and Predistortion Based on a Modular Approach","authors":"P. Gilabert, D. Silveira, G. Montoro, G. Magerl","doi":"10.1109/EMICC.2006.282803","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282803","url":null,"abstract":"This paper presents the black-box modeling of a microwave power amplifier (PA) operating near saturation and the performance of a modular predistortion model designed for this PA. A 16-QAM modulation scheme has been used as input signal. Nonlinearities caused by the amplifier operating at low input back-off (IBO), that is close to compression, can change the output constellation and lead to difficulties in finding the correct model parameters since the black-box identification procedure is based on measured input/output signals. A segment of the input/output measurement data is processed to generate an initial model. Then pseudo-inverse techniques are used to find a parsimonious Wiener model that is cross-validated with the entire measurement data. The presented modeling approach results in a model intended to be numerically robust and having a high identification percentage based on the normalized mean squared error (NMSE) figure of merit. Once the PA model is obtained, a Hammerstein based predistorter (HPD) is estimated by means of the indirect learning approach (PA input-output measured data). Simulation and experimental results are provided in order to show linearity improvement achieved by this HPD. In band and out of band distortion compensation are measured in terms of adjacent channel power ratio (ACPR) and error vector magnitude (EVM) reduction","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128118656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282693
S. DiNardo, P. Farinelli, F. Giacomozzi, G. Mannocchi, R. Marcelli, B. Margesin, P. Mezzanotte, V. Million, P. Russer, R. Sorrentino, F. Vitulli, L. Vietzorreck
A broadband single pole double throw (SPDT) switch has been developed for use in the range of 0 to 30 GHz. The switch consists of a cascade of a MEMS ohmic series and a capaci-tive shunt switch with floating electrode in each branch. It is manufactured on high-resistive silicon using surface micro-machining technology. The SPDT switch provides an insertion loss better than -0.6 dB, return loss smaller than -20dB, and isolation better than -40 dB in nearly the whole band. A switching voltage around 50 V is needed. The switch is used as a building block for more complex switching networks. The fabrication process is described and the measured RF-performances are reported and discussed. A failure analysis exhibits a lifetime up to 109 actuations
{"title":"Broadband RF-MEMS Based SPDT","authors":"S. DiNardo, P. Farinelli, F. Giacomozzi, G. Mannocchi, R. Marcelli, B. Margesin, P. Mezzanotte, V. Million, P. Russer, R. Sorrentino, F. Vitulli, L. Vietzorreck","doi":"10.1109/EMICC.2006.282693","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282693","url":null,"abstract":"A broadband single pole double throw (SPDT) switch has been developed for use in the range of 0 to 30 GHz. The switch consists of a cascade of a MEMS ohmic series and a capaci-tive shunt switch with floating electrode in each branch. It is manufactured on high-resistive silicon using surface micro-machining technology. The SPDT switch provides an insertion loss better than -0.6 dB, return loss smaller than -20dB, and isolation better than -40 dB in nearly the whole band. A switching voltage around 50 V is needed. The switch is used as a building block for more complex switching networks. The fabrication process is described and the measured RF-performances are reported and discussed. A failure analysis exhibits a lifetime up to 109 actuations","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132555617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282758
S. Marsh, B. Alderman, D. Matheson, P. D. de Maagt
This paper describes the computer aided design techniques used to design millimeter-wave mixer components for potentially high volume applications such as medical and security screening and non-destructive testing. These are demonstrated by the design of a 183GHz subharmonic mixer for earth observation applications. Using commercially available foundry diodes, the mixer exhibits 6.85dB double side-band conversion loss and a mixer temperature of 988 Kelvin using 5mW of local oscillator power at 92GHz. The subharmonic mixer is designed as a fixed tuned component with the least number of parts to minimize the cost and maximize its potential for volume manufacture
{"title":"CAD Techniques for 183GHz Fixed Tuned Sub-Harmonic Mixer Using Foundry Diodes","authors":"S. Marsh, B. Alderman, D. Matheson, P. D. de Maagt","doi":"10.1109/EMICC.2006.282758","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282758","url":null,"abstract":"This paper describes the computer aided design techniques used to design millimeter-wave mixer components for potentially high volume applications such as medical and security screening and non-destructive testing. These are demonstrated by the design of a 183GHz subharmonic mixer for earth observation applications. Using commercially available foundry diodes, the mixer exhibits 6.85dB double side-band conversion loss and a mixer temperature of 988 Kelvin using 5mW of local oscillator power at 92GHz. The subharmonic mixer is designed as a fixed tuned component with the least number of parts to minimize the cost and maximize its potential for volume manufacture","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132637382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282656
R. Sakai, M. Uchida, G. Araki
We studied an InGaAs epitaxial layers growth by metalorganic chemical vapor deposition (MOCVD) for InP-based high electron mobility transistors (HEMTs). The InGaAs channel layer of HEMTs was grown by a new material combination of triethylindium (TEI), triethylgallium (TEG) and arsine (AsH3). An electron mobility of the HEMTs structure sample was 20% higher than the one grown by trimethylindium (TMI), TEG and AsH3. And the DC characteristics of the HEMTs, the drain current and transconductance, were increased compared with the one. It is confirmed that this growth method is quite effective for the improvement of a characteristics of InP-based HEMTs
{"title":"Studies of InGaAs layers growth by metalorganic chemical vapor deposition for InP-HEMTs; Effects of trimethylindium and triethylindium","authors":"R. Sakai, M. Uchida, G. Araki","doi":"10.1109/EMICC.2006.282656","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282656","url":null,"abstract":"We studied an InGaAs epitaxial layers growth by metalorganic chemical vapor deposition (MOCVD) for InP-based high electron mobility transistors (HEMTs). The InGaAs channel layer of HEMTs was grown by a new material combination of triethylindium (TEI), triethylgallium (TEG) and arsine (AsH3). An electron mobility of the HEMTs structure sample was 20% higher than the one grown by trimethylindium (TMI), TEG and AsH3. And the DC characteristics of the HEMTs, the drain current and transconductance, were increased compared with the one. It is confirmed that this growth method is quite effective for the improvement of a characteristics of InP-based HEMTs","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115563408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282817
A. Parker, J. Rathmell
A novel view of dispersion of linearity in broadband circuits is offered, whereby memory effects impart a frequency dependence to linearity of FET amplifiers. The considerable variation in intermodulation across wide bandwidths due to trapping and heating mechanisms are considered here as a dispersion of linearity that is bias dependent. This is of interest to designers because the dispersion gives intermodulation a strong dependence on center and spacing of test frequencies, which requires an interpretation of intermodulation measurements and specifications across the whole signal bandwidth. This is important for meeting legislative requirements or for designing for good spurious-free dynamic range, and for improving the performance of linearization techniques where band-limiting of optimal linear conditions may occur
{"title":"Dispersion of Linearity in Broadband FET Circuits","authors":"A. Parker, J. Rathmell","doi":"10.1109/EMICC.2006.282817","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282817","url":null,"abstract":"A novel view of dispersion of linearity in broadband circuits is offered, whereby memory effects impart a frequency dependence to linearity of FET amplifiers. The considerable variation in intermodulation across wide bandwidths due to trapping and heating mechanisms are considered here as a dispersion of linearity that is bias dependent. This is of interest to designers because the dispersion gives intermodulation a strong dependence on center and spacing of test frequencies, which requires an interpretation of intermodulation measurements and specifications across the whole signal bandwidth. This is important for meeting legislative requirements or for designing for good spurious-free dynamic range, and for improving the performance of linearization techniques where band-limiting of optimal linear conditions may occur","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114698384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282753
N. Ui, S. Sano
A 100W class-E GaN HEMT device has been developed for high power and high efficiency amplifier. The authors achieved superior measurement results; drain efficiency of 75%, CW output power of 100W and associated power gain of 12dB at 2.14GHz and 50V drain bias operation with acceptable frequency band characteristics in simple class-E circuit topology
{"title":"A 100W Class-E GaN HEMT with 75% Drain Efficiency at 2GHz","authors":"N. Ui, S. Sano","doi":"10.1109/EMICC.2006.282753","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282753","url":null,"abstract":"A 100W class-E GaN HEMT device has been developed for high power and high efficiency amplifier. The authors achieved superior measurement results; drain efficiency of 75%, CW output power of 100W and associated power gain of 12dB at 2.14GHz and 50V drain bias operation with acceptable frequency band characteristics in simple class-E circuit topology","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114419429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282672
A. Costantini, B. Lawrence, S. Mahon, J. Harvey, G. McCulloch, A. Bessemoulin
This paper presents the design and the evaluation of a selection of broadband active and passive baluns. These balanced structures have been developed for future integration in monolithic millimeter-wave transceivers that deliver greater functionality than previously available. The paper presents two compact wideband active balun designs for the range 1 to 16 GHz and 10 to 30 GHz. Two passive baluns are also included, one for IF range 1.5 to 2.5 GHz and the other for the RF range 35 GHz to 45 GHz. The active baluns give a viable alternative to passive baluns within system constraints and a matrix of balun characteristics is presented to clearly indicate the appropriate choice for satisfying transceiver specifications
{"title":"Broadband Active and Passive Balun Circuits: Functional Blocks for Modern Millimeter-Wave Radio Architectures","authors":"A. Costantini, B. Lawrence, S. Mahon, J. Harvey, G. McCulloch, A. Bessemoulin","doi":"10.1109/EMICC.2006.282672","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282672","url":null,"abstract":"This paper presents the design and the evaluation of a selection of broadband active and passive baluns. These balanced structures have been developed for future integration in monolithic millimeter-wave transceivers that deliver greater functionality than previously available. The paper presents two compact wideband active balun designs for the range 1 to 16 GHz and 10 to 30 GHz. Two passive baluns are also included, one for IF range 1.5 to 2.5 GHz and the other for the RF range 35 GHz to 45 GHz. The active baluns give a viable alternative to passive baluns within system constraints and a matrix of balun characteristics is presented to clearly indicate the appropriate choice for satisfying transceiver specifications","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123346180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282763
A. Khan, A. Rezazadeh
The effect of various biasing conditions and temperature on third order two-tone intermodulation distortion characteristics of InGaP/GaAs microwave DHBTs is studied. The experimental results indicated that the variations in the third order nonlinearity characteristic dip are mainly due to changes in the DC current gain of the device at a fixed and relatively low collector current. Changes in the AC power gain (with bias and temperature) only become important at higher collector currents. These variations in the dip of the third order nonlinearity are used to calculate thermal resistance at low power optimal operating point of the dip. The results are compared with other methods of extracting thermal resistance from DC characteristics. This analysis has been reported for the first time and is important in understanding the non-linear characteristics of microwave device
{"title":"Bias and Temperature Dependant Third Order Nonlinearity of GaAs DHBTs and its use in Extracting Thermal Resistance","authors":"A. Khan, A. Rezazadeh","doi":"10.1109/EMICC.2006.282763","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282763","url":null,"abstract":"The effect of various biasing conditions and temperature on third order two-tone intermodulation distortion characteristics of InGaP/GaAs microwave DHBTs is studied. The experimental results indicated that the variations in the third order nonlinearity characteristic dip are mainly due to changes in the DC current gain of the device at a fixed and relatively low collector current. Changes in the AC power gain (with bias and temperature) only become important at higher collector currents. These variations in the dip of the third order nonlinearity are used to calculate thermal resistance at low power optimal operating point of the dip. The results are compared with other methods of extracting thermal resistance from DC characteristics. This analysis has been reported for the first time and is important in understanding the non-linear characteristics of microwave device","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125433849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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