Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115449
P. Maillard, M. Hart, Jeff Barton, Jue Arver, Christina Smith
This paper examines the single-event effect response of the Xilinx 16nm FinFET XCZU9EG Zynq® MPSoC irradiated with neutrons, 64 MeV protons and thermal neutrons sources. A 16nm FPGA-like test chip was also built for alpha foil testing. Results for single-event upsets on configuration RAM (CRAM) cells and block RAM (bRAM) cells are provided for the programmable logic. In addition, the 1st· Xilinx 16nm FinFET processor (PS) SEE results are also presented.
{"title":"Neutron, 64 MeV proton & alpha single-event characterization of Xilinx 16nm FinFET Zynq® UltraScale+™ MPSoC","authors":"P. Maillard, M. Hart, Jeff Barton, Jue Arver, Christina Smith","doi":"10.1109/NSREC.2017.8115449","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115449","url":null,"abstract":"This paper examines the single-event effect response of the Xilinx 16nm FinFET XCZU9EG Zynq® MPSoC irradiated with neutrons, 64 MeV protons and thermal neutrons sources. A 16nm FPGA-like test chip was also built for alpha foil testing. Results for single-event upsets on configuration RAM (CRAM) cells and block RAM (bRAM) cells are provided for the programmable logic. In addition, the 1st· Xilinx 16nm FinFET processor (PS) SEE results are also presented.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122255125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115486
D. L. Hansen, F. Meraz, J. Montoya, S. Roberg, G. Williamson
Total ionizing dose and single event effects testing was performed on 4 Gb NAND flash die used in DDC's 69F24G24 flash NAND devices. If the data is regularly refreshed, the devices show good resistance to corrupted bits during total dose irradiation. In the case of heavy ion irradiation, multi-bit upsets could prove problematic to some error correction schemes.
{"title":"Radiation testing of a flash NAND device","authors":"D. L. Hansen, F. Meraz, J. Montoya, S. Roberg, G. Williamson","doi":"10.1109/NSREC.2017.8115486","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115486","url":null,"abstract":"Total ionizing dose and single event effects testing was performed on 4 Gb NAND flash die used in DDC's 69F24G24 flash NAND devices. If the data is regularly refreshed, the devices show good resistance to corrupted bits during total dose irradiation. In the case of heavy ion irradiation, multi-bit upsets could prove problematic to some error correction schemes.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115496255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115444
D. Lambert, F. Desnoyers, D. Thouvenot, O. Riant, Jérémy Galinat, B. Azaïs, T. Colladant
Single Event Effect (SEE) characterizations under a few MeV neutrons are presented for various commercial SRAMs and FPGAs.
介绍了几种商用sram和fpga在几个MeV中子下的单事件效应(SEE)表征。
{"title":"Single Event upsets induced by a few MeV neutrons in SRAMs and FPGAs","authors":"D. Lambert, F. Desnoyers, D. Thouvenot, O. Riant, Jérémy Galinat, B. Azaïs, T. Colladant","doi":"10.1109/NSREC.2017.8115444","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115444","url":null,"abstract":"Single Event Effect (SEE) characterizations under a few MeV neutrons are presented for various commercial SRAMs and FPGAs.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117113894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115436
F. G. Leite, V. Aguiar, N. Added, R. Giacomini, N. Medina, R. B. B. Santos, M. Silveira
Assessing electronic systems regarding ionizing radiation is often costly and requires complex facilities capable of generating the ionizing radiation, and highly qualified human resources to fulfill all the requirements for the radiation tests. This work proposes a fast and low-cost setup to evaluate soft errors on digital programmable systems owing to Single Event Effects caused by ionizing radiation. Alpha particle sources allows to test these systems on a fast and simple procedure, with the advantage of evaluating also the system's sensitivity to ionizing radiation.
{"title":"Fast and low-cost soft error testing of a COTS microcontroller with alpha particle source","authors":"F. G. Leite, V. Aguiar, N. Added, R. Giacomini, N. Medina, R. B. B. Santos, M. Silveira","doi":"10.1109/NSREC.2017.8115436","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115436","url":null,"abstract":"Assessing electronic systems regarding ionizing radiation is often costly and requires complex facilities capable of generating the ionizing radiation, and highly qualified human resources to fulfill all the requirements for the radiation tests. This work proposes a fast and low-cost setup to evaluate soft errors on digital programmable systems owing to Single Event Effects caused by ionizing radiation. Alpha particle sources allows to test these systems on a fast and simple procedure, with the advantage of evaluating also the system's sensitivity to ionizing radiation.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125867379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115438
J. Benitez, A. Donoghue, Michael B. Johnson, W. Lu, B. Ninemire, L. Phair, D. Todd, D. Xie
Electron Cyclotron Resonance (ECR) Ion Sources at Lawrence Berkeley National Laboratory's (LBNL) 88-Inch Cyclotron produce heavy ion cocktails to test the radiation hardness of spacecraft electronics. A 20 MeV/u cocktail is underway and the 10 MeV/u cocktail has been expanded to include gold.
{"title":"Recent cocktail beam developments at the 88-inch cyclotron for SEE testing","authors":"J. Benitez, A. Donoghue, Michael B. Johnson, W. Lu, B. Ninemire, L. Phair, D. Todd, D. Xie","doi":"10.1109/NSREC.2017.8115438","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115438","url":null,"abstract":"Electron Cyclotron Resonance (ECR) Ion Sources at Lawrence Berkeley National Laboratory's (LBNL) 88-Inch Cyclotron produce heavy ion cocktails to test the radiation hardness of spacecraft electronics. A 20 MeV/u cocktail is underway and the 10 MeV/u cocktail has been expanded to include gold.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132089825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115487
J. Dubeau, S. H. Witharana, R. Peterson, M. Kiselev, E. M. Sacay
Neutron fields are created inside and outside the vault as byproducts of radioisotope production of the 70 MeV cyclotron at Zevacor Molecular Inc. Neutron energy distribution measurements were obtained for a 10 μΑ accelerator proton beam incident on a Rb/Ga target using the Nested Neutron Spectrometer. The neutron fluence rate at a 30 cm diameter conduit outside of the vault reached 3.95×104 cm−2 s−1 and was measured to be 7.68×107 cm−2 s−1 inside the vault at a distance of 1 m from the target. Neutron output is expected to be approximately 20 times greater during routine operational conditions (200 μΑ). Inside the vault, the spectrum showed features similar to theoretical models and may provide a useful environment to test space-bound electronics.
{"title":"Measurement of the neutron field characteristics inside and outside the vault of a 70 MeV cyclotron","authors":"J. Dubeau, S. H. Witharana, R. Peterson, M. Kiselev, E. M. Sacay","doi":"10.1109/NSREC.2017.8115487","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115487","url":null,"abstract":"Neutron fields are created inside and outside the vault as byproducts of radioisotope production of the 70 MeV cyclotron at Zevacor Molecular Inc. Neutron energy distribution measurements were obtained for a 10 μΑ accelerator proton beam incident on a Rb/Ga target using the Nested Neutron Spectrometer. The neutron fluence rate at a 30 cm diameter conduit outside of the vault reached 3.95×10<sup>4</sup> cm<sup>−2</sup> s<sup>−1</sup> and was measured to be 7.68×10<sup>7</sup> cm<sup>−2</sup> s<sup>−1</sup> inside the vault at a distance of 1 m from the target. Neutron output is expected to be approximately 20 times greater during routine operational conditions (200 μΑ). Inside the vault, the spectrum showed features similar to theoretical models and may provide a useful environment to test space-bound electronics.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126461105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115475
M. Pinto, P. Assis, M. Ferreira, P. Gonçalves, M. Muschitiello, C. Poivey
The major contribution to the Total Ionizing Dose (TID) damage to EEE components to be flown in the ESA JUICE mission to the Jovian system comes from the electron radiation belts of Jupiter and of its moons. However, standard testing of TID degradation of EEE components is performed with 60Co gammas. In this work the representativity of 60Co testing for the Jovian electron environment was tested by comparing TID degradation of selected EEE components when irradiated with 60Co gammas and with electron beams with energy above 10 MeV. In order to perform this verification, typical components used in space systems were irradiated at different facilities, under different conditions with High Dose Rate (HDR) and Low Dose Rate (LDR) 60Co gammas and with 12 MeV and 20 MeV electrons beams up to 100 krad (water). Key parameters of each component were measured before, during (every 20 krad) and after irradiation. The results obtained show no significant sensitivity to radiation type in all components tested. Furthermore, results achieved (the annealing measurement phase is still ongoing) confirm that 60Co testing is representative of the expected response to TID of the five tested component types to be flown in JUICE.
{"title":"Representativeness of 60Co testing for EEE components to be flown in JUICE","authors":"M. Pinto, P. Assis, M. Ferreira, P. Gonçalves, M. Muschitiello, C. Poivey","doi":"10.1109/NSREC.2017.8115475","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115475","url":null,"abstract":"The major contribution to the Total Ionizing Dose (TID) damage to EEE components to be flown in the ESA JUICE mission to the Jovian system comes from the electron radiation belts of Jupiter and of its moons. However, standard testing of TID degradation of EEE components is performed with 60Co gammas. In this work the representativity of 60Co testing for the Jovian electron environment was tested by comparing TID degradation of selected EEE components when irradiated with 60Co gammas and with electron beams with energy above 10 MeV. In order to perform this verification, typical components used in space systems were irradiated at different facilities, under different conditions with High Dose Rate (HDR) and Low Dose Rate (LDR) 60Co gammas and with 12 MeV and 20 MeV electrons beams up to 100 krad (water). Key parameters of each component were measured before, during (every 20 krad) and after irradiation. The results obtained show no significant sensitivity to radiation type in all components tested. Furthermore, results achieved (the annealing measurement phase is still ongoing) confirm that 60Co testing is representative of the expected response to TID of the five tested component types to be flown in JUICE.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115263927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115481
P. Manzano, M. Álvarez, S. Sampedro, M. Rivas, I. Traseira, J. Manzano, J. R. Mingo, A. Martín-Ortega, N. Andrés
Heavy ion latch-up test on Microchip microcontroller dsPIC30F6014A has been performed in order to analyze its suitability for ExoMars 2020 mission. The estimation of SEL rate shows the applicability of the microcontroller for non-critical functions.
{"title":"Heavy ion latch-up test on dsPIC microcontroller to be used in ExoMars 2020 mission","authors":"P. Manzano, M. Álvarez, S. Sampedro, M. Rivas, I. Traseira, J. Manzano, J. R. Mingo, A. Martín-Ortega, N. Andrés","doi":"10.1109/NSREC.2017.8115481","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115481","url":null,"abstract":"Heavy ion latch-up test on Microchip microcontroller dsPIC30F6014A has been performed in order to analyze its suitability for ExoMars 2020 mission. The estimation of SEL rate shows the applicability of the microcontroller for non-critical functions.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121645672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115462
M. Von Thun, D. Walz, Radu Dumitru, Anthony L. Wilson, T. Farris
Embedded Compiled SRAMs are included as part of the Cobham 130nm Radiation Hardened ASIC design environment. Previous testing of the Cobham 130nm library was performed at Lawrence Berkeley National Laboratory and is reported in the following references [1]–[4]. This work describes additional characterization of two architectures of compiled embedded SRAMs in heavy ion and proton environments. Heavy ion testing was performed at the Texas A&M University Cyclotron Institute (TAMU) and proton testing was performed at the TRI-University Meson Facility (TRIUMF).
{"title":"SEU characterization of an embedded 130nm compiled SRAM in heavy ion and proton environments","authors":"M. Von Thun, D. Walz, Radu Dumitru, Anthony L. Wilson, T. Farris","doi":"10.1109/NSREC.2017.8115462","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115462","url":null,"abstract":"Embedded Compiled SRAMs are included as part of the Cobham 130nm Radiation Hardened ASIC design environment. Previous testing of the Cobham 130nm library was performed at Lawrence Berkeley National Laboratory and is reported in the following references [1]–[4]. This work describes additional characterization of two architectures of compiled embedded SRAMs in heavy ion and proton environments. Heavy ion testing was performed at the Texas A&M University Cyclotron Institute (TAMU) and proton testing was performed at the TRI-University Meson Facility (TRIUMF).","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115241111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115477
A. Bakerenkov, V. Felitsyn, V. V. Orlov, A. Rodin, G. Zebrev
Total dose radiation response of the n-channel 2N7002 transistors was examined at different temperatures. Voltage-current characteristics of the devices were measured before and after irradiation in wide temperature range from 80 K to 350 K.
{"title":"Total dose radiation response of n-channel enhancement mode field effect transistors over wide operation temperature range","authors":"A. Bakerenkov, V. Felitsyn, V. V. Orlov, A. Rodin, G. Zebrev","doi":"10.1109/NSREC.2017.8115477","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115477","url":null,"abstract":"Total dose radiation response of the n-channel 2N7002 transistors was examined at different temperatures. Voltage-current characteristics of the devices were measured before and after irradiation in wide temperature range from 80 K to 350 K.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125087136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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