Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115466
Raichelle J. Aniceto, Slaven Moro, R. Milanowski, C. Isabelle, N. Hall, B. Vermeire, K. Cahoy
Experimental assessment of commercial 100/200 Gbps optical coherent DSP modem ASIC completed with 64 MeV and 480 MeV proton radiation test campaigns. Single event effect cross sections calculated and no performance degradation observed for proton fluence levels up to 1.27×1012 p/cm2 with equivalent total ionizing dose exposure to 170 krad(Si).
{"title":"Single event effect and total ionizing dose assessment of commercial optical coherent DSP ASIC","authors":"Raichelle J. Aniceto, Slaven Moro, R. Milanowski, C. Isabelle, N. Hall, B. Vermeire, K. Cahoy","doi":"10.1109/NSREC.2017.8115466","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115466","url":null,"abstract":"Experimental assessment of commercial 100/200 Gbps optical coherent DSP modem ASIC completed with 64 MeV and 480 MeV proton radiation test campaigns. Single event effect cross sections calculated and no performance degradation observed for proton fluence levels up to 1.27×1012 p/cm2 with equivalent total ionizing dose exposure to 170 krad(Si).","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"423 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126713243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115451
K. Sielewicz, G. Rinella, M. Bonora, P. Giubilato, M. Lupi, M. Rossewij, J. Schambach, T. Vanat
This paper describes experimental methods and results for the evaluation of triple modular redundancy SEU mitigation techniques with the Xilinx Kintex-7 FPGA. Testing was performed both in proton irradiation and fault injection tests.
{"title":"Experimental methods and results for the evaluation of triple modular redundancy SEU mitigation techniques with the Xilinx Kintex-7 FPGA","authors":"K. Sielewicz, G. Rinella, M. Bonora, P. Giubilato, M. Lupi, M. Rossewij, J. Schambach, T. Vanat","doi":"10.1109/NSREC.2017.8115451","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115451","url":null,"abstract":"This paper describes experimental methods and results for the evaluation of triple modular redundancy SEU mitigation techniques with the Xilinx Kintex-7 FPGA. Testing was performed both in proton irradiation and fault injection tests.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116987909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115461
J. Cruz-Colon, V. Narayanan, W. Vonbergen, R. G. Roybal, R. Baumann
Single Events Effect (SEE) characterization results for LVPECL 1:10 Clock Distributor is summarized, showing very robust SEE performance up to LETeff=69.2 MeV-cm2/mg.
{"title":"Radiation evaluation of the CDCLVP111-SP low voltage 1:10 LVPECL clock distributor","authors":"J. Cruz-Colon, V. Narayanan, W. Vonbergen, R. G. Roybal, R. Baumann","doi":"10.1109/NSREC.2017.8115461","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115461","url":null,"abstract":"Single Events Effect (SEE) characterization results for LVPECL 1:10 Clock Distributor is summarized, showing very robust SEE performance up to LET<inf>eff</inf>=69.2 MeV-cm<sup>2</sup>/mg.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131344618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115446
Haibin Wang, Qingyu Chen, Li Chen, D. Hiemstra, V. Kirischian
Vroton induced SEU cross-sections of Tegra K1 mobile processor are presented. Overall upset rates of Tegra K1 in the space radiation environment are estimated.
{"title":"Single event upset characterization of the Tegra K1 mobile processor using proton irradiation","authors":"Haibin Wang, Qingyu Chen, Li Chen, D. Hiemstra, V. Kirischian","doi":"10.1109/NSREC.2017.8115446","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115446","url":null,"abstract":"Vroton induced SEU cross-sections of Tegra K1 mobile processor are presented. Overall upset rates of Tegra K1 in the space radiation environment are estimated.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"377 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133847592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115459
S. Narayanan, V. Narayanan, C. Yots, J. Cruz-Colon
The SEE, TID, and SET effects of the LMH5401-SP, industry leading fully differential amplifier, are presented. No latch up events were observed up to an LET of 85 MeV.cm2/mg at 125 C.
{"title":"Radiation effects characterization of TI LMH5401-SP ultra-wideband fully differential amplifier (FDA)","authors":"S. Narayanan, V. Narayanan, C. Yots, J. Cruz-Colon","doi":"10.1109/NSREC.2017.8115459","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115459","url":null,"abstract":"The SEE, TID, and SET effects of the LMH5401-SP, industry leading fully differential amplifier, are presented. No latch up events were observed up to an LET of 85 MeV.cm2/mg at 125 C.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128014617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115452
S. Guertin, M. Cui
SEE test results are presented for proton, neutron, and heavy ion testing of the Qualcomm Snapdragon 820 and its support DDR4 device (in this case the SK Hynix 24 Gb LP DDR4 device H9HKNNNDGUMUBR-NMH). Processor crashes and DDR4 stuck bits are the primary SEE types for protons and neutrons. Test preparation difficulties and software limitations caused test efforts to be limited to processor crashes, SEFIs and SBU, and Stuck Bits in the DDR4 device. Interpretation of results is complicated by mixing of errors between devices.
{"title":"SEE test results for the Snapdragon 820","authors":"S. Guertin, M. Cui","doi":"10.1109/NSREC.2017.8115452","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115452","url":null,"abstract":"SEE test results are presented for proton, neutron, and heavy ion testing of the Qualcomm Snapdragon 820 and its support DDR4 device (in this case the SK Hynix 24 Gb LP DDR4 device H9HKNNNDGUMUBR-NMH). Processor crashes and DDR4 stuck bits are the primary SEE types for protons and neutrons. Test preparation difficulties and software limitations caused test efforts to be limited to processor crashes, SEFIs and SBU, and Stuck Bits in the DDR4 device. Interpretation of results is complicated by mixing of errors between devices.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129248487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115456
P. Adell, Slaven Moro, L. Gouyet, C. Chatry, B. Vermeire
Single event effect susceptibility of a 1-Mbit commercial MRAM was experimentally evaluated. The memory exhibited SEFIs when operated in a dynamic mode with an LET threshold of 2.29 MeV.cm2/mg and a saturated cross section of 2.2×10−4 cm2/device. The memory was not sensitive to SEL, SEU or MBUs.
{"title":"Single event effect assessment of a 1-Mbit commercial magneto-resistive random access memory (MRAM)","authors":"P. Adell, Slaven Moro, L. Gouyet, C. Chatry, B. Vermeire","doi":"10.1109/NSREC.2017.8115456","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115456","url":null,"abstract":"Single event effect susceptibility of a 1-Mbit commercial MRAM was experimentally evaluated. The memory exhibited SEFIs when operated in a dynamic mode with an LET threshold of 2.29 MeV.cm<sup>2</sup>/mg and a saturated cross section of 2.2×10<sup>−4</sup> cm<sup>2</sup>/device. The memory was not sensitive to SEL, SEU or MBUs.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129511536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115455
R. Katti
Heavy-ion device effect cross-sections from irradiated MRAM Magnetic Tunnel Junctions are LET/atomic number, and not fluence, dominated, with distribution tails similar to thermally-accelerated resistance and magnetoresistance shifts that also depend physically on the tunnel barrier.
{"title":"Heavy-ion device cross-section response in magnetic tunnel junctions for a radiation hardened 16Mb magnetoresistive random access memory (MRAM)","authors":"R. Katti","doi":"10.1109/NSREC.2017.8115455","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115455","url":null,"abstract":"Heavy-ion device effect cross-sections from irradiated MRAM Magnetic Tunnel Junctions are LET/atomic number, and not fluence, dominated, with distribution tails similar to thermally-accelerated resistance and magnetoresistance shifts that also depend physically on the tunnel barrier.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131342117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115479
R. Koga, S. Davis, J. George
We present observations of heavy ion and proton induced radiation effects on selected COTS differential bus integrated microcircuits.
我们观察了重离子和质子诱导辐射对选定的COTS差动总线集成微电路的影响。
{"title":"Heavy ion and proton induced radiation effects on differential bus transceiver microcircuits","authors":"R. Koga, S. Davis, J. George","doi":"10.1109/NSREC.2017.8115479","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115479","url":null,"abstract":"We present observations of heavy ion and proton induced radiation effects on selected COTS differential bus integrated microcircuits.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126869718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115472
M. Mccurdy, peixiong zhao, D. Fleetwood, K. Bole, B. Poling
We report summary test results of commercially available GaN HEMT RF power devices from Cree and Qorvo, Inc., with 1.8 MeV protons in three operational modes. Tested parameters include threshold voltage, transconductance, and S-parameters representative of RF/power performance. Thermoelectric cooling was used to minimize thermally induced parametric shifts.
{"title":"1.8 MeV proton testing of thermally stabilized GaN HEMT RF power devices in three operational modes","authors":"M. Mccurdy, peixiong zhao, D. Fleetwood, K. Bole, B. Poling","doi":"10.1109/NSREC.2017.8115472","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115472","url":null,"abstract":"We report summary test results of commercially available GaN HEMT RF power devices from Cree and Qorvo, Inc., with 1.8 MeV protons in three operational modes. Tested parameters include threshold voltage, transconductance, and S-parameters representative of RF/power performance. Thermoelectric cooling was used to minimize thermally induced parametric shifts.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"332 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115976461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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