Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115440
Yaqing Chi, Bin Liang, YongJie Sun, Yang Guo, Shuming Chen
The Total Ionizing Dose and Single Event Effects test results of YHFT-DV, a 32-bit floating-point digital signal processor are reported in this paper. The result shows the DSP is well radiation hardened.
{"title":"Radiation hardness evaluation of the YHFT-DV digital signal processor","authors":"Yaqing Chi, Bin Liang, YongJie Sun, Yang Guo, Shuming Chen","doi":"10.1109/NSREC.2017.8115440","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115440","url":null,"abstract":"The Total Ionizing Dose and Single Event Effects test results of YHFT-DV, a 32-bit floating-point digital signal processor are reported in this paper. The result shows the DSP is well radiation hardened.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128052347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115476
A. Bakerenkov, A. Rodin, V. Pershenkov, V. Felitsyn, Yu D Bursian
The effect of post irradiation annealing on the following radiation degradation rate of bipolar integrated circuit parameters was estimated. The degradation rate increases significantly during the irradiation in comparison with the irradiation before the annealing.
{"title":"The impact of annealing on the following radiation degradation rate of bipolar devices","authors":"A. Bakerenkov, A. Rodin, V. Pershenkov, V. Felitsyn, Yu D Bursian","doi":"10.1109/NSREC.2017.8115476","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115476","url":null,"abstract":"The effect of post irradiation annealing on the following radiation degradation rate of bipolar integrated circuit parameters was estimated. The degradation rate increases significantly during the irradiation in comparison with the irradiation before the annealing.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116591780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115454
S. Davis, R. Koga, J. George
We performed proton and heavy-ion testing of the Microsemi Igloo2 FPGA using several basic designs looking at the logic, embedded SRAM, and mathblocks as well as any SEFI or high current states.
{"title":"Proton and heavy ion testing of the Microsemi Igloo2 FPGA","authors":"S. Davis, R. Koga, J. George","doi":"10.1109/NSREC.2017.8115454","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115454","url":null,"abstract":"We performed proton and heavy-ion testing of the Microsemi Igloo2 FPGA using several basic designs looking at the logic, embedded SRAM, and mathblocks as well as any SEFI or high current states.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134647128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115471
W. H. Newman, N. V. van Vonno, O. Mansilla, L. Pearce, E. Thomson
Intersil has developed a family of radiation-hardened, high-voltage, high-precision analog parts in a complementary bipolar process on bonded-wafer SOI. Parts in this process, called PR40, include low-noise precision opamps, bandgap voltage references and a temperature sensor.
{"title":"A radiation hardened, high-voltage, high-precision analog family","authors":"W. H. Newman, N. V. van Vonno, O. Mansilla, L. Pearce, E. Thomson","doi":"10.1109/NSREC.2017.8115471","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115471","url":null,"abstract":"Intersil has developed a family of radiation-hardened, high-voltage, high-precision analog parts in a complementary bipolar process on bonded-wafer SOI. Parts in this process, called PR40, include low-noise precision opamps, bandgap voltage references and a temperature sensor.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121450130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115463
Anthony L. Wilson, D. Walz, Younes Lotfi, K. Merkel, M. Von Thun, T. Farris
We present single event transient (SET) and total ionizing dose (TID) data for the single channel voltage supervisor fabricated in a 0.35μm triple-well, mixed-signal CMOS process.
{"title":"Heavy ion and TID characterization of 3.3 V voltage supervisors","authors":"Anthony L. Wilson, D. Walz, Younes Lotfi, K. Merkel, M. Von Thun, T. Farris","doi":"10.1109/NSREC.2017.8115463","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115463","url":null,"abstract":"We present single event transient (SET) and total ionizing dose (TID) data for the single channel voltage supervisor fabricated in a 0.35μm triple-well, mixed-signal CMOS process.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"402 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122950095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115437
E. V. Mitin, Ekaterina N. Nekrasova, V. Anashin, A. Koziukov
A new heating approach for radiation hardness tests of the electronic components at elevated temperature is presented. Infrared laser radiation is used to increase temperature of the chip. In order to determine some practical aspects of the electronic components heating, a number of experiments for the devices in packages of different types have been performed in vacuum and in air environment. Heat transfer processes in the device structure after laser beam absorption have also been simulated using the finite element method. Application of the laser heating approach for radiation hardness assurance tests at elevated temperatures is discussed.
{"title":"Research of noncontact laser-based approach for DUT heating during single-event effect tests with heavy ion exposure","authors":"E. V. Mitin, Ekaterina N. Nekrasova, V. Anashin, A. Koziukov","doi":"10.1109/NSREC.2017.8115437","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115437","url":null,"abstract":"A new heating approach for radiation hardness tests of the electronic components at elevated temperature is presented. Infrared laser radiation is used to increase temperature of the chip. In order to determine some practical aspects of the electronic components heating, a number of experiments for the devices in packages of different types have been performed in vacuum and in air environment. Heat transfer processes in the device structure after laser beam absorption have also been simulated using the finite element method. Application of the laser heating approach for radiation hardness assurance tests at elevated temperatures is discussed.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"156 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132410322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115464
B. Mcguyer, R. Milanowski, Slaven Moro, N. Hall, B. Vermeire
We report proton testing of a position measuring system, the Kaman KD-5100, with applications including mirror positioning for laser beam control. We measure a device response likely due to total ionizing dose and/or displacement damage.
{"title":"Proton testing results for Kaman KD-5100 differential inductive position measuring systems","authors":"B. Mcguyer, R. Milanowski, Slaven Moro, N. Hall, B. Vermeire","doi":"10.1109/NSREC.2017.8115464","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115464","url":null,"abstract":"We report proton testing of a position measuring system, the Kaman KD-5100, with applications including mirror positioning for laser beam control. We measure a device response likely due to total ionizing dose and/or displacement damage.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124335894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115484
A. Kelly, J. Rodgers, Stephen Johnson, Ronald D. Brown, Aaron Adamson
Heavy ion and proton single event effects characterization data on BAE Systems RADNET 1848-PS Application Specific Standard Product are presented. The RADNET 1848-PS is a Serial RapidIO packet switch capable of running at rates up to 3.125 Gbaud. An at-speed SRIO network test for SEE cross section measurement is used to estimate soft error rates for observed upset modes in a reference orbit environment.
{"title":"Single event effects characterization of BAE systems RADNET™ 1848-PS RapidIO® packet switch","authors":"A. Kelly, J. Rodgers, Stephen Johnson, Ronald D. Brown, Aaron Adamson","doi":"10.1109/NSREC.2017.8115484","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115484","url":null,"abstract":"Heavy ion and proton single event effects characterization data on BAE Systems RADNET 1848-PS Application Specific Standard Product are presented. The RADNET 1848-PS is a Serial RapidIO packet switch capable of running at rates up to 3.125 Gbaud. An at-speed SRIO network test for SEE cross section measurement is used to estimate soft error rates for observed upset modes in a reference orbit environment.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115008268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The 2016 Workshop Record has been reviewed and a table prepared to facilitate the search for radiation response data by part number, type, or effect.
已经审核了2016年车间记录，并准备了一个表格，以方便按零件号、类型或影响搜索辐射响应数据。
{"title":"Guide to the 2016 IEEE radiation effects data workshop record","authors":"D. Hiemstra","doi":"10.1109/REDW.2008.8","DOIUrl":"https://doi.org/10.1109/REDW.2008.8","url":null,"abstract":"The 2016 Workshop Record has been reviewed and a table prepared to facilitate the search for radiation response data by part number, type, or effect.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116615366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/redw.2014.7004559
S. Danzeca, P. Peronnard, G. Foucard, G. Tsiligiannis, R. Secondo, R. Ferraro, C. McAllister, T. Borel, M. Brugger, A. Masi, S. Gilardoni
Vulnerability of a variety of components for particle accelerators electronics to single event effects, total ionizing dose and displacement damage has been analyzed. The tested parts include analog, linear, digital, and hybrid devices.
{"title":"Compendium of radiation-induced effects for candidate particle accelerator electronics","authors":"S. Danzeca, P. Peronnard, G. Foucard, G. Tsiligiannis, R. Secondo, R. Ferraro, C. McAllister, T. Borel, M. Brugger, A. Masi, S. Gilardoni","doi":"10.1109/redw.2014.7004559","DOIUrl":"https://doi.org/10.1109/redw.2014.7004559","url":null,"abstract":"Vulnerability of a variety of components for particle accelerators electronics to single event effects, total ionizing dose and displacement damage has been analyzed. The tested parts include analog, linear, digital, and hybrid devices.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129304289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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