Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115458
B. Myers, K. Kruckmeyer, T. Trinh
The ELDRS characterization data is presented for Texas Instruments' dual op amp LM158, where it is shown that results for the low dose rate have better performance than for the high dose rate. The LM158 is ELDRS free to 100 krad.
{"title":"ELDRS characterization up to 100 krad of texas instruments' dual amplifier LM158","authors":"B. Myers, K. Kruckmeyer, T. Trinh","doi":"10.1109/NSREC.2017.8115458","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115458","url":null,"abstract":"The ELDRS characterization data is presented for Texas Instruments' dual op amp LM158, where it is shown that results for the low dose rate have better performance than for the high dose rate. The LM158 is ELDRS free to 100 krad.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131332534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115480
L. Artola, A. A. Youssef, S. Ducret, R. Buiron, S. Parola, G. Hubert, C. Poivey
This work presents the measurements of single event transients and functional interrupts on two designs of readout integrated circuit under a heavy ions beam at cryogenic temperatures. The temperature dependence of the SEFI occurrence is limited.
{"title":"Single event transient and functional interrupt in readout integrated circuit of infrared image sensors at low temperatures","authors":"L. Artola, A. A. Youssef, S. Ducret, R. Buiron, S. Parola, G. Hubert, C. Poivey","doi":"10.1109/NSREC.2017.8115480","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115480","url":null,"abstract":"This work presents the measurements of single event transients and functional interrupts on two designs of readout integrated circuit under a heavy ions beam at cryogenic temperatures. The temperature dependence of the SEFI occurrence is limited.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125917219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115447
Qingyu Chen, D. Hiemstra, Haibin Wang, Li Chen, V. Kirischian
Vroton induced SEU cross-section of DSP cores within the KeyStone™ II system-on-chip 66AK2L06 is presented. Upset rates in the space radiation environment are estimated.
{"title":"High energy proton irradiation results for the DSP cores of the KeyStone II system-on-chip (SoC) 66AK2L06","authors":"Qingyu Chen, D. Hiemstra, Haibin Wang, Li Chen, V. Kirischian","doi":"10.1109/NSREC.2017.8115447","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115447","url":null,"abstract":"Vroton induced SEU cross-section of DSP cores within the KeyStone™ II system-on-chip 66AK2L06 is presented. Upset rates in the space radiation environment are estimated.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128170936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115435
M. Andreotti, Wander Baldini, M. Baszczyk, R. Calabrese, A. Candelori, P. Carniti, L. Cassina, A. C. Ramusino, P. Dorosz, M. Fiorini, Andrea Giachero, C. Gotti, W. Kucewicz, E. Luppi, M. Maino, R. Malaguti, S. Mattiazzo, L. Minzoni, I. Neri, L. Pappalardo, G. Pessina, L. Silvestrin, L. Tomassetti
A new version of the CLARO8 ASIC has been designed in AMS 0.35 μm CMOS technology, based on radiation hardened by design cells, and extensively tested. Results on the complete radiation hardness characterization are presented.
{"title":"A fast and radiation-hard single-photon counting ASIC for the upgrade of the LHCb RICH detector at CERN","authors":"M. Andreotti, Wander Baldini, M. Baszczyk, R. Calabrese, A. Candelori, P. Carniti, L. Cassina, A. C. Ramusino, P. Dorosz, M. Fiorini, Andrea Giachero, C. Gotti, W. Kucewicz, E. Luppi, M. Maino, R. Malaguti, S. Mattiazzo, L. Minzoni, I. Neri, L. Pappalardo, G. Pessina, L. Silvestrin, L. Tomassetti","doi":"10.1109/NSREC.2017.8115435","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115435","url":null,"abstract":"A new version of the CLARO8 ASIC has been designed in AMS 0.35 μm CMOS technology, based on radiation hardened by design cells, and extensively tested. Results on the complete radiation hardness characterization are presented.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129210674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115474
D. Lasi, M. Tulej, M. Neuland, P. Wurz, T. Carzaniga, K. Nesteruk, S. Braccini, H. Elsener
The Neutral and Ion Mass Spectrometer onboard ESA Jupiter mission JUICE employs thick-film resistors (from ∼1 Ω to ∼1 MQ), screen-printed on ceramic elements, to realize high-voltage ion optical elements and decontamination heaters. Despite the relevant space heritage, these materials were never employed before in a radiation environment comparable to Jupiter's magnetosphere. With this study, we prove the suitability of these materials for the NIM instrument by means of irradiation up to ∼ 16–85 Mrad in vacuum with 18 MeV protons. To allow an accurate calculation of the dose, the chemical composition of the samples is determined by Laser Mass Spectrometry. Thanks to a custom-designed irradiation station, the temperature and the electrical parameters of the sample are monitored in real-time during the irradiation, or the sample can be subject to high-voltages representative of the operating conditions in space. All in all, the materials proved to be radiation-hard in the investigated dose range, with few exceptions where permanent damages occur.
{"title":"Testing the radiation hardness of thick-film resistors for a time-of-flight mass spectrometer at jupiter with 18 MeV protons","authors":"D. Lasi, M. Tulej, M. Neuland, P. Wurz, T. Carzaniga, K. Nesteruk, S. Braccini, H. Elsener","doi":"10.1109/NSREC.2017.8115474","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115474","url":null,"abstract":"The Neutral and Ion Mass Spectrometer onboard ESA Jupiter mission JUICE employs thick-film resistors (from ∼1 Ω to ∼1 MQ), screen-printed on ceramic elements, to realize high-voltage ion optical elements and decontamination heaters. Despite the relevant space heritage, these materials were never employed before in a radiation environment comparable to Jupiter's magnetosphere. With this study, we prove the suitability of these materials for the NIM instrument by means of irradiation up to ∼ 16–85 Mrad in vacuum with 18 MeV protons. To allow an accurate calculation of the dose, the chemical composition of the samples is determined by Laser Mass Spectrometry. Thanks to a custom-designed irradiation station, the temperature and the electrical parameters of the sample are monitored in real-time during the irradiation, or the sample can be subject to high-voltages representative of the operating conditions in space. All in all, the materials proved to be radiation-hard in the investigated dose range, with few exceptions where permanent damages occur.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134537789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115485
D. L. Hansen, R. Hillman, F. Meraz, J. Montoya, G. Williamson
Single-event effects and total ionizing-dose testing was performed on a flash NAND device. The results are presented here and the consequences for error correction architectures are analyzed taking into account the fact that beginning-of-life flash devices are susceptible to data corruption with no external stress applied. The analysis indicates that many typical error correction architectures may be ineffectual because of the variety of radiation effects.
{"title":"Architectural consequences of radiation performance in a flash NAND device","authors":"D. L. Hansen, R. Hillman, F. Meraz, J. Montoya, G. Williamson","doi":"10.1109/NSREC.2017.8115485","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115485","url":null,"abstract":"Single-event effects and total ionizing-dose testing was performed on a flash NAND device. The results are presented here and the consequences for error correction architectures are analyzed taking into account the fact that beginning-of-life flash devices are susceptible to data corruption with no external stress applied. The analysis indicates that many typical error correction architectures may be ineffectual because of the variety of radiation effects.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133996872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115470
N. V. van Vonno, O. Mansilla, J. S. Gill, W. H. Newman, L. Pearce, E. Thomson
We provide a brief discussion of the basic enhancement mode gallium nitride (GaN) power FET device structure and its performance and then report the results of destructive single-event effects (SEE) testing of the Intersil ISL70023SEH and ISL70024SEH GaN power transistors. We include a discussion of a conservative safe operating area (SOA) specification for both devices.
{"title":"Destructive single-event effects testing of the Intersil ISL70023SEH and ISL70024SEH gallium nitride power transistors","authors":"N. V. van Vonno, O. Mansilla, J. S. Gill, W. H. Newman, L. Pearce, E. Thomson","doi":"10.1109/NSREC.2017.8115470","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115470","url":null,"abstract":"We provide a brief discussion of the basic enhancement mode gallium nitride (GaN) power FET device structure and its performance and then report the results of destructive single-event effects (SEE) testing of the Intersil ISL70023SEH and ISL70024SEH GaN power transistors. We include a discussion of a conservative safe operating area (SOA) specification for both devices.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123887559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115468
D. L. Hansen
This paper reports on the calculation of proton SEU cross section from heavy-ion data in GaAs devices. A number of different models are used, however in each, accommodations must be made to account for the fact that the density and ionization energy of GaAs differs from that of Si. Model accuracy is checked using data on proton and heavy-ion cross sections from the published literature.
{"title":"Proton cross-sections from heavy-ion data in GaAs devices","authors":"D. L. Hansen","doi":"10.1109/NSREC.2017.8115468","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115468","url":null,"abstract":"This paper reports on the calculation of proton SEU cross section from heavy-ion data in GaAs devices. A number of different models are used, however in each, accommodations must be made to account for the fact that the density and ionization energy of GaAs differs from that of Si. Model accuracy is checked using data on proton and heavy-ion cross sections from the published literature.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125769604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115457
M. Gadlage, M. Kay, David I. Bruce, A. Roach, A. Duncan, Aaron M. Williams, J. D. Ingalls
The total dose response of commercially-available floating-gate-alternative non-volatile memories is characterized. The response of MRAM, FRAM, CBRAM, ReRAM, SONOS, and PCRAM devices are compared to a relatively radiation tolerant NAND flash.
{"title":"Total ionizing dose effects in commercial floating-gate-alternative non-volatile memories","authors":"M. Gadlage, M. Kay, David I. Bruce, A. Roach, A. Duncan, Aaron M. Williams, J. D. Ingalls","doi":"10.1109/NSREC.2017.8115457","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115457","url":null,"abstract":"The total dose response of commercially-available floating-gate-alternative non-volatile memories is characterized. The response of MRAM, FRAM, CBRAM, ReRAM, SONOS, and PCRAM devices are compared to a relatively radiation tolerant NAND flash.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126060443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115453
S. Guertin, Sergeh Vartanian
Earlier P2020 SEE data are compared and expanded to a recent die revision, significantly increasing samples tested by protons by five devices, and by heavy ions by five devices. Earlier tested SEE types are found to be fairly similar in register, L1 cache, L2 cache, and CPU crashes. New test methods give SEE performance for the flash memory controller, watchdog circuit, and a built-in Ethernet port on the P2020 processor. Results from heavy ion and proton tests are presented, with data separated over a large number of specific error types and test programs.
{"title":"Towards a qualification data set: Expanded SEE data on the P2020 processor","authors":"S. Guertin, Sergeh Vartanian","doi":"10.1109/NSREC.2017.8115453","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115453","url":null,"abstract":"Earlier P2020 SEE data are compared and expanded to a recent die revision, significantly increasing samples tested by protons by five devices, and by heavy ions by five devices. Earlier tested SEE types are found to be fairly similar in register, L1 cache, L2 cache, and CPU crashes. New test methods give SEE performance for the flash memory controller, watchdog circuit, and a built-in Ethernet port on the P2020 processor. Results from heavy ion and proton tests are presented, with data separated over a large number of specific error types and test programs.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"228 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114472360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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