Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115478
M. Sureau, Russell Stevens, M. Leuenberger, N. Rezzak, Dorian Johnson
TID, ELDRS and SEE hardening and testing of the first radiation hardened analog mixed-signal telemetry controller IC, the LX7730, are presented.
介绍了首个抗辐射模拟混合信号遥测控制器IC LX7730的TID、ELDRS和SEE硬化和测试。
{"title":"TID, ELDRS and SEE hardening and testing on mixed signal telemetry LX7730 controller","authors":"M. Sureau, Russell Stevens, M. Leuenberger, N. Rezzak, Dorian Johnson","doi":"10.1109/NSREC.2017.8115478","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115478","url":null,"abstract":"TID, ELDRS and SEE hardening and testing of the first radiation hardened analog mixed-signal telemetry controller IC, the LX7730, are presented.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"177 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132410738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115439
A. Donoghue, L. Phair, Michael B. Johnson, B. Ninemire, S. Small, R. Siero, T. Gimpel
An investigation is made of the trade-off between fluence measurement accuracy and ion changeover time. Allowing users to select fluence measurement accuracy based on the type of testing being performed and time available.
{"title":"Selectable fluence accuracy at the BASE heavy ion facility","authors":"A. Donoghue, L. Phair, Michael B. Johnson, B. Ninemire, S. Small, R. Siero, T. Gimpel","doi":"10.1109/NSREC.2017.8115439","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115439","url":null,"abstract":"An investigation is made of the trade-off between fluence measurement accuracy and ion changeover time. Allowing users to select fluence measurement accuracy based on the type of testing being performed and time available.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"abs/2305.16079 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125413670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115443
D. Alexander, Alonzo Vera, James Aarestad, Gabriel V. Urbaitis
Total dose test results are presented for the Maxim 1257/1258 multi-channel ADC/DAC, and the Linear Technology LTC2378-20 low power SAR ADC. The paper discusses radiation testing challenges of complex mixed signal circuits.
{"title":"Total dose testing of advanced mixed signal ADC/DAC microcircuits","authors":"D. Alexander, Alonzo Vera, James Aarestad, Gabriel V. Urbaitis","doi":"10.1109/NSREC.2017.8115443","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115443","url":null,"abstract":"Total dose test results are presented for the Maxim 1257/1258 multi-channel ADC/DAC, and the Linear Technology LTC2378-20 low power SAR ADC. The paper discusses radiation testing challenges of complex mixed signal circuits.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123174488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115460
V. Narayanan, S. Narayanan, J. Colon, Y. Christian
OPA4277-SP is a high precision operational amplifier with very low offset device that is released for space applications. OPA4277-SP has been characterized to pass Total Ionizing Dose (TID) of 50Krads and is shown to be latch-up immune up to 90.9 MeV-cm2/mg. Detailed Single Event Transient (SET) study was done to encompass multiple customer use case conditions.
{"title":"Radiation effects characterization of TI OPA4277-SP high precision operational amplifier","authors":"V. Narayanan, S. Narayanan, J. Colon, Y. Christian","doi":"10.1109/NSREC.2017.8115460","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115460","url":null,"abstract":"OPA4277-SP is a high precision operational amplifier with very low offset device that is released for space applications. OPA4277-SP has been characterized to pass Total Ionizing Dose (TID) of 50Krads and is shown to be latch-up immune up to 90.9 MeV-cm2/mg. Detailed Single Event Transient (SET) study was done to encompass multiple customer use case conditions.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114556558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115442
S. C. Witczak, Jeremiah J. Horner, D. Harms, Todd S. Mason, K. E. Marino, Glen E. Macejik
The Northrop Grumman 4558 Analog Processor / Analog-to-Digital Converter was evaluated for tolerance to ionizing radiation at moderate doses. Radiation-induced shifts in non-linearity, noise, gain, offset and power dissipation are inferred from the transfer characteristics. Neither irradiation nor post-irradiation anneal has a measurable effect on the performance parameters. The radiation hardness is attributed in part to a p+ guardband under the isolation oxides. Given measurement error, acceptable beginning-of-life parametric ranges are provided to ensure specification compliance when only one set of measurements is performed.
{"title":"Ionizing radiation response of the 4558 analog processor / analog-to-digital converter","authors":"S. C. Witczak, Jeremiah J. Horner, D. Harms, Todd S. Mason, K. E. Marino, Glen E. Macejik","doi":"10.1109/NSREC.2017.8115442","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115442","url":null,"abstract":"The Northrop Grumman 4558 Analog Processor / Analog-to-Digital Converter was evaluated for tolerance to ionizing radiation at moderate doses. Radiation-induced shifts in non-linearity, noise, gain, offset and power dissipation are inferred from the transfer characteristics. Neither irradiation nor post-irradiation anneal has a measurable effect on the performance parameters. The radiation hardness is attributed in part to a p+ guardband under the isolation oxides. Given measurement error, acceptable beginning-of-life parametric ranges are provided to ensure specification compliance when only one set of measurements is performed.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116026045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115448
D. Hiemstra, V. Kirischian, J. Brelski
Proton induced SEU cross-sections of the SRAM which stores the logic configuration and certain functional blocks of the Zynq UltraScale+ MPSOC are presented. Upset rates in the space radiation environment are estimated.
{"title":"Single event upset characterization of the Zynq UltraScale+ MPSoC using proton irradiation","authors":"D. Hiemstra, V. Kirischian, J. Brelski","doi":"10.1109/NSREC.2017.8115448","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115448","url":null,"abstract":"Proton induced SEU cross-sections of the SRAM which stores the logic configuration and certain functional blocks of the Zynq UltraScale+ MPSOC are presented. Upset rates in the space radiation environment are estimated.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"130 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124884868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115450
Yanran P. Chen, P. Maillard, M. Hart, Jeff Barton, J. Schmitz, Patrick Kyu
This paper examines the single-event upset response of a customer memory interface design on the Xilinx 20nm XCKU040 Field Programmable Gate Array (FPGA) irradiated with 64MeV proton source. Results for single-event upsets on configuration RAM (CRAM) cells are provided. The difference between architectural vulnerability factor (AVF) and design vulnerability factor (DVF) of the customer memory interface design is also discussed in this work.
{"title":"64 MeV proton single-event upset characterization of customer memory interface design on Xilinx XCKU040 FPGA","authors":"Yanran P. Chen, P. Maillard, M. Hart, Jeff Barton, J. Schmitz, Patrick Kyu","doi":"10.1109/NSREC.2017.8115450","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115450","url":null,"abstract":"This paper examines the single-event upset response of a customer memory interface design on the Xilinx 20nm XCKU040 Field Programmable Gate Array (FPGA) irradiated with 64MeV proton source. Results for single-event upsets on configuration RAM (CRAM) cells are provided. The difference between architectural vulnerability factor (AVF) and design vulnerability factor (DVF) of the customer memory interface design is also discussed in this work.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121611053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115469
N. V. van Vonno, O. Mansilla, J. S. Gill, W. H. Newman, L. Pearce, E. Thomson
We provide a brief discussion of the basic enhancement mode gallium nitride (GaN) power FET device structure and its performance and then report the results of displacement damage (DD) testing of the Intersil ISL70023SEH and ISL70024SEH GaN power transistors.
{"title":"Displacement damage testing of the Intersil ISL70023SEH and ISL70024SEH gallium nitride power transistors","authors":"N. V. van Vonno, O. Mansilla, J. S. Gill, W. H. Newman, L. Pearce, E. Thomson","doi":"10.1109/NSREC.2017.8115469","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115469","url":null,"abstract":"We provide a brief discussion of the basic enhancement mode gallium nitride (GaN) power FET device structure and its performance and then report the results of displacement damage (DD) testing of the Intersil ISL70023SEH and ISL70024SEH GaN power transistors.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126100042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115483
R. Shuler
We describe heavy ion tests of RHBD configurations (varying guard timing, spacing, number of strings), including DICE, TAG4, TMR, I/O pads and a new 10T voting latch, to identify strategies for a portable nanoscale library. The TAG4, now off patent, provides superior performance to DICE. Large critical node separation requirements in bulk 65 nm are inferred. The new 10t voting latch performs as well as conventional TMR. A voting by block placement strategy demonstrates rapid reconfiguration for increased critical node group separation, and near optimal layout efficiency.
{"title":"Configuration tests of RHBD library with DICE, TAG4, dual rail, TMR and new 10T voting latch using UMC 65 and XFAB 180 nm","authors":"R. Shuler","doi":"10.1109/NSREC.2017.8115483","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115483","url":null,"abstract":"We describe heavy ion tests of RHBD configurations (varying guard timing, spacing, number of strings), including DICE, TAG4, TMR, I/O pads and a new 10T voting latch, to identify strategies for a portable nanoscale library. The TAG4, now off patent, provides superior performance to DICE. Large critical node separation requirements in bulk 65 nm are inferred. The new 10t voting latch performs as well as conventional TMR. A voting by block placement strategy demonstrates rapid reconfiguration for increased critical node group separation, and near optimal layout efficiency.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125719322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115465
R. Milanowski, Raichelle J. Aniceto, Fred Hardy, B. Vermeire, M. Jacox, Slaven Moro, K. Cahoy
Commercial off-the-shelf 12-Megapixel CMOS image sensors were irradiated with 105 MeV protons — one part to a fluence of 4×1011 protons/cm2, and a second part to 2×1011 protons/cm2. Pixel brightness increases with fluence along with annealing effects are reported. No latch-up events or hangs occurred.
{"title":"Proton radiation effects assessment of a commercial 12-megapixel CMOS imager","authors":"R. Milanowski, Raichelle J. Aniceto, Fred Hardy, B. Vermeire, M. Jacox, Slaven Moro, K. Cahoy","doi":"10.1109/NSREC.2017.8115465","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115465","url":null,"abstract":"Commercial off-the-shelf 12-Megapixel CMOS image sensors were irradiated with 105 MeV protons — one part to a fluence of 4×10<sup>11</sup> protons/cm<sup>2</sup>, and a second part to 2×10<sup>11</sup> protons/cm<sup>2</sup>. Pixel brightness increases with fluence along with annealing effects are reported. No latch-up events or hangs occurred.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"178 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126997214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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