Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549382
C. Senthilpari, S. Kavitha, Jude Joseph
This paper is mainly focused on designs of full-adder using by Shannon theorem based on pass transistor approach. The proposed Shannon theorem adder, SERF, CMOS 10T and mirror adder circuits are implemented in non-restoring array divider circuit. The divider circuits is schematized by using DSCH2 CAD tools and their layouts are simulated by using Microwind 3 VLSI layout CAD tool. The parameter analyses are analyzed by using BSIM 4 analyzer. The analysis includes power dissipation, propagation delay, chip area, power delay product (PDP), Energy Per Instruction (EPI), latency and throughput. These analyses are compared with reported author results, which shows better improvement in terms of low power, lower area, lower propagation delay and high throughput.
{"title":"Lower delay and area efficient non-restoring array divider by using Shannon based adder technique","authors":"C. Senthilpari, S. Kavitha, Jude Joseph","doi":"10.1109/SMELEC.2010.5549382","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549382","url":null,"abstract":"This paper is mainly focused on designs of full-adder using by Shannon theorem based on pass transistor approach. The proposed Shannon theorem adder, SERF, CMOS 10T and mirror adder circuits are implemented in non-restoring array divider circuit. The divider circuits is schematized by using DSCH2 CAD tools and their layouts are simulated by using Microwind 3 VLSI layout CAD tool. The parameter analyses are analyzed by using BSIM 4 analyzer. The analysis includes power dissipation, propagation delay, chip area, power delay product (PDP), Energy Per Instruction (EPI), latency and throughput. These analyses are compared with reported author results, which shows better improvement in terms of low power, lower area, lower propagation delay and high throughput.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124264843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549504
K. Zain
The electronic industry is the leading sector in Malaysia's manufacturing sector, contributing significantly to the country's manufacturing output 29.3%, export 55.9% and employment of 28.8%. In 70's Malaysia is well known for the backend manufacturing. In 2000 Malaysia established it's semiconductor fabrication facilities to fill in one of the major gaps in supply chain that generates RM0.5Billion/year from a single facility. This significant source of revenue gives major impact to the overall semiconductor eco-system and local economy. Semiconductor fabrication requires huge equipment investment using various types of chemicals, gasses, materials, software systems, automation, jigs and fixtures, consumables and parts in clean room environment. The process to fabricate a chip on wafer will take thirty to one hundred days depending on the complexity of the design. This demands a very highly skilled workforce to operate the processes, equipments, manufacturing and facilities. Semiconductor fabrication facility has a very deep anchor to the value chain surrounding economy and will be discussed in detail the presentation.
{"title":"Semiconductor fabrication eco-systems and supply chain in Malaysia","authors":"K. Zain","doi":"10.1109/SMELEC.2010.5549504","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549504","url":null,"abstract":"The electronic industry is the leading sector in Malaysia's manufacturing sector, contributing significantly to the country's manufacturing output 29.3%, export 55.9% and employment of 28.8%. In 70's Malaysia is well known for the backend manufacturing. In 2000 Malaysia established it's semiconductor fabrication facilities to fill in one of the major gaps in supply chain that generates RM0.5Billion/year from a single facility. This significant source of revenue gives major impact to the overall semiconductor eco-system and local economy. Semiconductor fabrication requires huge equipment investment using various types of chemicals, gasses, materials, software systems, automation, jigs and fixtures, consumables and parts in clean room environment. The process to fabricate a chip on wafer will take thirty to one hundred days depending on the complexity of the design. This demands a very highly skilled workforce to operate the processes, equipments, manufacturing and facilities. Semiconductor fabrication facility has a very deep anchor to the value chain surrounding economy and will be discussed in detail the presentation.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121665048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549578
D. A. Hadi, S. Hatta, N. Soin
Negative Bias Temperature Instability (NBTI) has become one of the critical reliability concerns as scaling down CMOS technology especially on the pMOSFET device. A simulation study had been conducted on 32 nm conventional pMOSFET using the technology CAD (TCAD) Sentaurus Synopsys simulator tool. In this paper, the effects of the gate oxide thickness together with drain bias variations on the NBTI are studied. The effect on the device parameters such as interface traps concentration (Nit), threshold voltage (Vth) and drain current (Id) degradation had been investigated and explained in detail.
{"title":"Effect of oxide thickness on 32nm Pmosfet reliability","authors":"D. A. Hadi, S. Hatta, N. Soin","doi":"10.1109/SMELEC.2010.5549578","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549578","url":null,"abstract":"Negative Bias Temperature Instability (NBTI) has become one of the critical reliability concerns as scaling down CMOS technology especially on the pMOSFET device. A simulation study had been conducted on 32 nm conventional pMOSFET using the technology CAD (TCAD) Sentaurus Synopsys simulator tool. In this paper, the effects of the gate oxide thickness together with drain bias variations on the NBTI are studied. The effect on the device parameters such as interface traps concentration (Nit), threshold voltage (Vth) and drain current (Id) degradation had been investigated and explained in detail.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"269 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133831274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549381
A. Choudhary, V. Maheshwari, Abhishek Singh, R. Kar
This paper proposes a wave propagation based approach to derive crosstalk and delay between two coupled RLCG interconnects in the transform domain. The increase of clock frequency into the GHz range, coupled with longer length interconnects of small cross-section and low dielectric strength, can result in cross coupling effects between on-chip interconnects. The traditional analysis of crosstalk in a transmission line begins with a lossless LC representation, yielding a wave equation governing the system response. In order to determine the effects that this cross talk will have on circuit operation, the resulting delays and logic levels for the victim nets must be computed. In this paper, we propose four reflection wave propagation based analytical model for estimation of crosstalk. An emphasis was made on the distributed nature of the RLCG model, thus underlining the effect of parasitic coupling inductance and conductance on present and future on-chip interconnects.
{"title":"Wave propagation based analytical delay and cross talk noise model for distributed on-chip RLCG interconnects","authors":"A. Choudhary, V. Maheshwari, Abhishek Singh, R. Kar","doi":"10.1109/SMELEC.2010.5549381","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549381","url":null,"abstract":"This paper proposes a wave propagation based approach to derive crosstalk and delay between two coupled RLCG interconnects in the transform domain. The increase of clock frequency into the GHz range, coupled with longer length interconnects of small cross-section and low dielectric strength, can result in cross coupling effects between on-chip interconnects. The traditional analysis of crosstalk in a transmission line begins with a lossless LC representation, yielding a wave equation governing the system response. In order to determine the effects that this cross talk will have on circuit operation, the resulting delays and logic levels for the victim nets must be computed. In this paper, we propose four reflection wave propagation based analytical model for estimation of crosstalk. An emphasis was made on the distributed nature of the RLCG model, thus underlining the effect of parasitic coupling inductance and conductance on present and future on-chip interconnects.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124869906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549541
A. Zoolfakar, H. Zulkefle, A. Zakaria, A. Manut, Abdul Aziz A, M. Zolkapli
This paper is to investigate correlation between doping technique towards diffusion rate and oxide growth rate. There are two types of doping technique that has been investigated such as Solid Source, SS and Spin on Dopant, SOD. Four inches wafers were used to investigate the effects of doping technique towards diffusion rate and oxidation rate. The resistivity of silicon substrate is measured by using 4-point probe while the oxide thickness is measured by an Ellipsometer. From this experiment, it can be concluded that diffusion rate of Solid Source is about 86% better than Spin on Dopand. While the oxide growth of Solid Source, SS is 3.6% better than Spin on Dopant.
{"title":"Correlation study between doping technique towards diffusion rate and oxidation rate","authors":"A. Zoolfakar, H. Zulkefle, A. Zakaria, A. Manut, Abdul Aziz A, M. Zolkapli","doi":"10.1109/SMELEC.2010.5549541","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549541","url":null,"abstract":"This paper is to investigate correlation between doping technique towards diffusion rate and oxide growth rate. There are two types of doping technique that has been investigated such as Solid Source, SS and Spin on Dopant, SOD. Four inches wafers were used to investigate the effects of doping technique towards diffusion rate and oxidation rate. The resistivity of silicon substrate is measured by using 4-point probe while the oxide thickness is measured by an Ellipsometer. From this experiment, it can be concluded that diffusion rate of Solid Source is about 86% better than Spin on Dopand. While the oxide growth of Solid Source, SS is 3.6% better than Spin on Dopant.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121881366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549501
M. Hashim
With the advancement of technology, the semiconductor materials are fabricated with ever shrinking size in order to reduce space and weight while at the same time benefiting from the improved performance such as high speed and low operating power. Recently found phenomena called, quantum confinement (QC) effects related to semiconductor material reaching the size in nanometer scale, only added to the excitement among researchers in this field around the world. Among notable effects of QC in nano-sized semiconductor is the enlargement of the bandgap due to the folding of the Brillouin zone. A few notable techniques that have been developed along this line are Metal Oxide Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE), and Liquid Phase Chemical Vapor Deposition to name but a few. However these machines are very expensive to operate especially for large scale production. This obstacle has prompted researchers to find other alternatives for cheaper production cost but trying to maintain the quality of the grown nanostructures for high performance devices. Those techniques are the ones which had been used before the QC effects are found. In this talk we are revisiting one of the low cost conventional techniques to grow high quality III-V nanostructure on Si substrate, that is electrochemical etching and deposition. This technique relies on the type of electrolyte, electrical current, temperature, time and ambient light. The quality of the grown layers is studied using SEM, PL, Raman and XRD Spectroscopy. The potential application of the grown layers in light emission, light detection, and gas sensing is also discussed.
{"title":"Nanostructures of III-V semiconductor for photonic, electronic, and sensing applications back to basics","authors":"M. Hashim","doi":"10.1109/SMELEC.2010.5549501","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549501","url":null,"abstract":"With the advancement of technology, the semiconductor materials are fabricated with ever shrinking size in order to reduce space and weight while at the same time benefiting from the improved performance such as high speed and low operating power. Recently found phenomena called, quantum confinement (QC) effects related to semiconductor material reaching the size in nanometer scale, only added to the excitement among researchers in this field around the world. Among notable effects of QC in nano-sized semiconductor is the enlargement of the bandgap due to the folding of the Brillouin zone. A few notable techniques that have been developed along this line are Metal Oxide Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE), and Liquid Phase Chemical Vapor Deposition to name but a few. However these machines are very expensive to operate especially for large scale production. This obstacle has prompted researchers to find other alternatives for cheaper production cost but trying to maintain the quality of the grown nanostructures for high performance devices. Those techniques are the ones which had been used before the QC effects are found. In this talk we are revisiting one of the low cost conventional techniques to grow high quality III-V nanostructure on Si substrate, that is electrochemical etching and deposition. This technique relies on the type of electrolyte, electrical current, temperature, time and ambient light. The quality of the grown layers is studied using SEM, PL, Raman and XRD Spectroscopy. The potential application of the grown layers in light emission, light detection, and gas sensing is also discussed.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122484402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549500
M. Othman
This presentation provides strategic direction for ubiquitous sensor networks and how we can benefit from the technology for the betterment of our lifes. An overview of the global progress is presented and the values of the technology in terms of the realization of WSN implementation in many vertical applications such as in the agriculture, medical, transportation and environment will be given. Some statements of benefits of the technology especially in the areas of medical for human and plants and environmental will be verbalised. Then followed by some case studies especially in the sensor technologies for chemical and bio-sensors will be presented. Issues in the realization both in terms of ethical and technological challenges in bio-medical sensors will be highlighted. MIMOS has been actively pursuing the R&D in bio-chemical sensors especially for the application in the field of agriculture. The multipurpose nature of the design can easily be modified to suit for many other applications in the future. In particular an integrated sensors for monitoring soil and environment (N, P, K, pH, T, Moisture and humidity sensors) has been produced and has been deployed at the POC level in several plantations industries. The R&D findings related to the sensors will be shared during the presentation. Last but not least a systemic approach in conducting and realizing gas sensors for environment will be given. The process established is very important to ensure the deliverables of the sensor systems meeting industrial requirements. A conclusion will be presented at the end of the presentation.
{"title":"Ubiquitous sensor technologies: The way moving forward","authors":"M. Othman","doi":"10.1109/SMELEC.2010.5549500","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549500","url":null,"abstract":"This presentation provides strategic direction for ubiquitous sensor networks and how we can benefit from the technology for the betterment of our lifes. An overview of the global progress is presented and the values of the technology in terms of the realization of WSN implementation in many vertical applications such as in the agriculture, medical, transportation and environment will be given. Some statements of benefits of the technology especially in the areas of medical for human and plants and environmental will be verbalised. Then followed by some case studies especially in the sensor technologies for chemical and bio-sensors will be presented. Issues in the realization both in terms of ethical and technological challenges in bio-medical sensors will be highlighted. MIMOS has been actively pursuing the R&D in bio-chemical sensors especially for the application in the field of agriculture. The multipurpose nature of the design can easily be modified to suit for many other applications in the future. In particular an integrated sensors for monitoring soil and environment (N, P, K, pH, T, Moisture and humidity sensors) has been produced and has been deployed at the POC level in several plantations industries. The R&D findings related to the sensors will be shared during the presentation. Last but not least a systemic approach in conducting and realizing gas sensors for environment will be given. The process established is very important to ensure the deliverables of the sensor systems meeting industrial requirements. A conclusion will be presented at the end of the presentation.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114171295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549421
M. Abadi, M. Hamidon, A. Shaari, N. Abdullah, R. Wagiran, N. Misron
A multi–layer thick film array sensor for gas sensing application including heater element, insulator layer, and interdigitated electrodes was designed and fabricated on alumina substrate. Tin dioxide and platinum nanopowder were used in the pellet form as the active and catalyst layers, respectively. Pulse laser ablation deposition (PLAD) technique was used to deposit the sensitive layer onto the electrode part of each sensor. Microstructural and morphological properties of the sensor surface were determined. Sensors were exposed to wood smoke and their sensitivity were measured and compared with the results of the sensors without catalyst layer.
{"title":"Development of nanocrystalline laser ablated thick film array gas sensor","authors":"M. Abadi, M. Hamidon, A. Shaari, N. Abdullah, R. Wagiran, N. Misron","doi":"10.1109/SMELEC.2010.5549421","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549421","url":null,"abstract":"A multi–layer thick film array sensor for gas sensing application including heater element, insulator layer, and interdigitated electrodes was designed and fabricated on alumina substrate. Tin dioxide and platinum nanopowder were used in the pellet form as the active and catalyst layers, respectively. Pulse laser ablation deposition (PLAD) technique was used to deposit the sensitive layer onto the electrode part of each sensor. Microstructural and morphological properties of the sensor surface were determined. Sensors were exposed to wood smoke and their sensitivity were measured and compared with the results of the sensors without catalyst layer.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116038166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549363
Abhijeet Kshirsagar, P. Apte, S. Duttagupta, S. Gangal
Cantilever based metal-to-metal contact type MEMS series switch has many applications namely in RFMEMS, Power MEMS etc. A typical MEMS switch consists of a cantilever as actuating element to make the contact between the two metal terminals of the switch. In electrostatic type switches the cantilever is pulled down by applying a pull-in voltage to the control electrode that is located below the middle portion of the cantilever while only the tip portion of the cantilever makes contact between the two terminals. Detailed analysis of bending of the cantilever for different pull-in voltages reveals some interesting facts. At low pull-in voltage the cantilever tip barely touches the two terminals, thus resulting in very less contact area. To increase contact area a very high pull-in voltage is applied. However it lifts the tip from the free end due to concave curving of the cantilever in the middle region of the cantilever where the electrode is located. It again results in less contact area. Furthermore, the high pull-in voltage produces large stress at the base of the cantilever close to the anchor. Therefore, an optimum, pull-in voltage must exist at which the concave curving is eliminated and contact area is maximum. In this paper authors report the procedure for finding a optimum voltage that can give maximum contact force across the two terminals. Taguchi method which is well suited to solve such optimization problem is used in the present work. The switch parameters, like cantilever length, cantilever width, electrode position, thickness of the metal of two terminals, are taken as 'control factors' with 4 levels each and simulation is performed for various combinations of the control factors as these appear in the rows of the L16 orthogonal array. The paper reports the optimum design of the MEMS switch.
{"title":"Optimization of pull-in voltage and contact force for MEMS series switch using Taguchi method","authors":"Abhijeet Kshirsagar, P. Apte, S. Duttagupta, S. Gangal","doi":"10.1109/SMELEC.2010.5549363","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549363","url":null,"abstract":"Cantilever based metal-to-metal contact type MEMS series switch has many applications namely in RFMEMS, Power MEMS etc. A typical MEMS switch consists of a cantilever as actuating element to make the contact between the two metal terminals of the switch. In electrostatic type switches the cantilever is pulled down by applying a pull-in voltage to the control electrode that is located below the middle portion of the cantilever while only the tip portion of the cantilever makes contact between the two terminals. Detailed analysis of bending of the cantilever for different pull-in voltages reveals some interesting facts. At low pull-in voltage the cantilever tip barely touches the two terminals, thus resulting in very less contact area. To increase contact area a very high pull-in voltage is applied. However it lifts the tip from the free end due to concave curving of the cantilever in the middle region of the cantilever where the electrode is located. It again results in less contact area. Furthermore, the high pull-in voltage produces large stress at the base of the cantilever close to the anchor. Therefore, an optimum, pull-in voltage must exist at which the concave curving is eliminated and contact area is maximum. In this paper authors report the procedure for finding a optimum voltage that can give maximum contact force across the two terminals. Taguchi method which is well suited to solve such optimization problem is used in the present work. The switch parameters, like cantilever length, cantilever width, electrode position, thickness of the metal of two terminals, are taken as 'control factors' with 4 levels each and simulation is performed for various combinations of the control factors as these appear in the rows of the L16 orthogonal array. The paper reports the optimum design of the MEMS switch.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129510103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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