Pub Date : 2001-01-21DOI: 10.1109/MEMSYS.2001.906533
M. Hara, S. Tanaka, M. Esashi
This paper describes the development of a micro-air-turbine-driven polarization modulator (MPM) for double modulation Fourier transform infrared spectroscopy (FT-IR). The MPM has a Au/Cr wire grid polarizer on the backside of a /spl phi/ 5 mm n-type silicon turbine rotor. The MPM was fabricated using silicon bulk micromachining techniques such as photolithography and deep reactive ion etching (deep RIE). We completed first and second generation MPMs. The second generation MPM has an improved blade shape, a narrower radial bearing gap of 10 /spl mu/m and a better rotor balance compared to those of the first generation MPM. The first generation MPM rotated at about 10,000 rpm using 0.44 MPa compressed air, and realized IR light modulation frequency of 0.3 kHz.
本文介绍了一种用于双调制傅里叶变换红外光谱(FT-IR)的微型空气涡轮驱动偏振调制器的研制。MPM在一个/spl phi/ 5 mm n型硅涡轮转子的背面有一个Au/Cr线栅偏振器。采用光刻和深度反应离子蚀刻(deep reactive ion etching, deep RIE)等硅体微加工技术制备了MPM。我们完成了第一代和第二代mpm。与第一代MPM相比，第二代MPM改进了叶片形状，径向轴承间隙缩小至10 /spl mu/m，转子平衡更好。第一代MPM使用0.44 MPa压缩空气，旋转速度约为10,000 rpm，实现了0.3 kHz的红外光调制频率。
{"title":"Micro-turbomachine driving an infrared polarization modulator for Fourier transform infrared spectroscopy","authors":"M. Hara, S. Tanaka, M. Esashi","doi":"10.1109/MEMSYS.2001.906533","DOIUrl":"https://doi.org/10.1109/MEMSYS.2001.906533","url":null,"abstract":"This paper describes the development of a micro-air-turbine-driven polarization modulator (MPM) for double modulation Fourier transform infrared spectroscopy (FT-IR). The MPM has a Au/Cr wire grid polarizer on the backside of a /spl phi/ 5 mm n-type silicon turbine rotor. The MPM was fabricated using silicon bulk micromachining techniques such as photolithography and deep reactive ion etching (deep RIE). We completed first and second generation MPMs. The second generation MPM has an improved blade shape, a narrower radial bearing gap of 10 /spl mu/m and a better rotor balance compared to those of the first generation MPM. The first generation MPM rotated at about 10,000 rpm using 0.44 MPa compressed air, and realized IR light modulation frequency of 0.3 kHz.","PeriodicalId":311365,"journal":{"name":"Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090)","volume":"157 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114649852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-01-21DOI: 10.1109/MEMSYS.2001.906602
Don-Hee Lee, H. Hong, Chil-Keun Park, Geun-ho Kim, Y. Jeon, J. Bu
This paper reports a high-sensitive robust humidity sensor using a pair of thermally isolated membranes on which includes meander shaped metal resistive elements are formed. The sensing mechanism of the humidity sensor is based on the difference of thermal conductivity with the amount of moisture in air. The sensor exhibits a sensitivity of 0.054 mV/%RH and a response time of 25 sec. Measurements show a remarkably small nonlinearity of 1% FS and a hysteresis of below 2% over a wide range from 40 to 90% RH. Various reliability tests required for practical use in food processing applications, such as a long-term stability test in high/low temperature (150/spl deg/C/-70/spl deg/C) and high humidity (95% RH) environment and a contamination test, reveal its superior durability in harsh environment.
{"title":"A micromachined robust humidity sensor for harsh environment applications","authors":"Don-Hee Lee, H. Hong, Chil-Keun Park, Geun-ho Kim, Y. Jeon, J. Bu","doi":"10.1109/MEMSYS.2001.906602","DOIUrl":"https://doi.org/10.1109/MEMSYS.2001.906602","url":null,"abstract":"This paper reports a high-sensitive robust humidity sensor using a pair of thermally isolated membranes on which includes meander shaped metal resistive elements are formed. The sensing mechanism of the humidity sensor is based on the difference of thermal conductivity with the amount of moisture in air. The sensor exhibits a sensitivity of 0.054 mV/%RH and a response time of 25 sec. Measurements show a remarkably small nonlinearity of 1% FS and a hysteresis of below 2% over a wide range from 40 to 90% RH. Various reliability tests required for practical use in food processing applications, such as a long-term stability test in high/low temperature (150/spl deg/C/-70/spl deg/C) and high humidity (95% RH) environment and a contamination test, reveal its superior durability in harsh environment.","PeriodicalId":311365,"journal":{"name":"Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090)","volume":"20 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120904236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-01-21DOI: 10.1109/MEMSYS.2001.906519
M. Ruan, J. Shen, C. Wheeler
This paper describes recent progresses on the development of a new type of latching micro magnetic relay that has recently been demonstrated. The device is based on preferential magnetization of a permalloy cantilever in a permanent external magnetic field. Switching between two stable states is accomplished by a short current pulse through an integrated coil underneath the cantilever. Some key features are summarized as follows. (1) Latching (bistable); (2) low energy consumption during switching (/spl lsim/93 /spl mu/J, switching current /spl sim/60 mA, minimum switching pulse width /spl sim/0.2 ms); (3) low voltage operation (/spl sim/5 V); (4) maximum DC current >500 mA; (5) capable of various switch configurations [single-pole-single-throw (SPST), multi-pole-single-throw (MPST), or multi-pole-double-throw (MPDT)]; (6) low contact resistance (/spl lsim/50 m/spl Omega/); (7) operation in ambient environment; (8) lifetime >5/spl times/10/sup 6/ cycles at 240 /spl mu/A, (9) batch fabrication using planar processing methods. We report new results on latching relays with multistrip permalloy cantilevers to improve the operation stability and with an off-center flexure bar to decrease the contact resistance.
{"title":"Latching micro magnetic relays with multistrip permalloy cantilevers","authors":"M. Ruan, J. Shen, C. Wheeler","doi":"10.1109/MEMSYS.2001.906519","DOIUrl":"https://doi.org/10.1109/MEMSYS.2001.906519","url":null,"abstract":"This paper describes recent progresses on the development of a new type of latching micro magnetic relay that has recently been demonstrated. The device is based on preferential magnetization of a permalloy cantilever in a permanent external magnetic field. Switching between two stable states is accomplished by a short current pulse through an integrated coil underneath the cantilever. Some key features are summarized as follows. (1) Latching (bistable); (2) low energy consumption during switching (/spl lsim/93 /spl mu/J, switching current /spl sim/60 mA, minimum switching pulse width /spl sim/0.2 ms); (3) low voltage operation (/spl sim/5 V); (4) maximum DC current >500 mA; (5) capable of various switch configurations [single-pole-single-throw (SPST), multi-pole-single-throw (MPST), or multi-pole-double-throw (MPDT)]; (6) low contact resistance (/spl lsim/50 m/spl Omega/); (7) operation in ambient environment; (8) lifetime >5/spl times/10/sup 6/ cycles at 240 /spl mu/A, (9) batch fabrication using planar processing methods. We report new results on latching relays with multistrip permalloy cantilevers to improve the operation stability and with an off-center flexure bar to decrease the contact resistance.","PeriodicalId":311365,"journal":{"name":"Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133896675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-01-21DOI: 10.1109/MEMSYS.2001.906591
T. Pornsin-Sirirak, Y. Tai, H. Nassef, C. Ho
This paper describes the first flexible parylene electrostatic actuator valves intended for micro adaptive flow control for the future use on the wings of micro-air-vehicle (MAV). The actuator diaphragm is made of two layers of parylene membranes with offset vent holes. Without electrostatic actuation, air can move freely from one side of the skin to the other side through the vent holes. With actuation, these vent holes are sealed and the airflow is controlled. The membrane behaves as a complete diaphragm. We have successfully demonstrated this function using a 2-mm/spl times/2-mm parylene diaphragm electrostatic actuator valves. This work also includes the novel anti-stiction technology that is crucial to make such large-area parylene actuator diaphragm with the combined use of anti-stiction posts, self-assembled monolayers (SAM), surface roughening, and bromine trifluoride (BrF/sub 3/) dry etching. With the help of SAM treatment, the operating voltage is lowered from 30 volts to 13 volts. The load deflection method is then used to measure the effective thickness of the composite diaphragm. The flexible parylene diaphragm can be deflected up to 100 /spl mu/m when 150 Torr of pressure is applied. The result is fitted into a theoretical model and yields an effective thickness of 5.9 /spl mu/m, which is agreeable with the actual thickness of 5.6 /spl mu/m, thus proves the functionality of the device.
{"title":"Flexible parylene actuator for micro adaptive flow control","authors":"T. Pornsin-Sirirak, Y. Tai, H. Nassef, C. Ho","doi":"10.1109/MEMSYS.2001.906591","DOIUrl":"https://doi.org/10.1109/MEMSYS.2001.906591","url":null,"abstract":"This paper describes the first flexible parylene electrostatic actuator valves intended for micro adaptive flow control for the future use on the wings of micro-air-vehicle (MAV). The actuator diaphragm is made of two layers of parylene membranes with offset vent holes. Without electrostatic actuation, air can move freely from one side of the skin to the other side through the vent holes. With actuation, these vent holes are sealed and the airflow is controlled. The membrane behaves as a complete diaphragm. We have successfully demonstrated this function using a 2-mm/spl times/2-mm parylene diaphragm electrostatic actuator valves. This work also includes the novel anti-stiction technology that is crucial to make such large-area parylene actuator diaphragm with the combined use of anti-stiction posts, self-assembled monolayers (SAM), surface roughening, and bromine trifluoride (BrF/sub 3/) dry etching. With the help of SAM treatment, the operating voltage is lowered from 30 volts to 13 volts. The load deflection method is then used to measure the effective thickness of the composite diaphragm. The flexible parylene diaphragm can be deflected up to 100 /spl mu/m when 150 Torr of pressure is applied. The result is fitted into a theoretical model and yields an effective thickness of 5.9 /spl mu/m, which is agreeable with the actual thickness of 5.6 /spl mu/m, thus proves the functionality of the device.","PeriodicalId":311365,"journal":{"name":"Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134035032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-01-21DOI: 10.1109/MEMSYS.2001.906521
G. Perregaux, S. Gonseth, P. Debergh, Jean-Philippe Thiébaud, H. Vuilliomenet
This paper describes an optical MEMS based on an array of electrostatically actuated polysilicon microshutters. Developed in the framework of an industrial project, they are integrated in a matrix of 602 elements that can be individually addressed and that constitute the core of an assembly for light switching. Despite severe specifications on the long-term functionality of this system, samples devices with several tens of millions of cycles have been demonstrated. The paper will focus on the technology, the design and the characteristics of these arrays. A large experimental work has allowed us to identify the main failure modes and the long-term behavior such as out of plane movement or in-use stiction. These phenomena will be discussed hereafter. We also report on possible improvements of the design that should solve the remaining limitations of the system.
{"title":"Arrays of addressable high-speed optical microshutters","authors":"G. Perregaux, S. Gonseth, P. Debergh, Jean-Philippe Thiébaud, H. Vuilliomenet","doi":"10.1109/MEMSYS.2001.906521","DOIUrl":"https://doi.org/10.1109/MEMSYS.2001.906521","url":null,"abstract":"This paper describes an optical MEMS based on an array of electrostatically actuated polysilicon microshutters. Developed in the framework of an industrial project, they are integrated in a matrix of 602 elements that can be individually addressed and that constitute the core of an assembly for light switching. Despite severe specifications on the long-term functionality of this system, samples devices with several tens of millions of cycles have been demonstrated. The paper will focus on the technology, the design and the characteristics of these arrays. A large experimental work has allowed us to identify the main failure modes and the long-term behavior such as out of plane movement or in-use stiction. These phenomena will be discussed hereafter. We also report on possible improvements of the design that should solve the remaining limitations of the system.","PeriodicalId":311365,"journal":{"name":"Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130976904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-01-21DOI: 10.1109/MEMSYS.2001.906496
D. Saya, K. Fukushima, H. Toshiyoshi, G. Hashiguchi, H. Fujita, H. Kawakatsu
For the purpose of improvement in resolution of force gradient and mass detection in atomic force microscope (AFM), we are developing cantilevers measuring from 100 nm to several microns. We succeeded in fabrication of single crystal Si cantilever with several microns size and measurement of its mechanical characteristics. Silicon-on-insulator (SOI) wafer is used for the fabrication. Fabrication is based on three anisotropic etching by KOH and two local oxidation processes of Si. Without depending on precision of lithography technique, triangular shaped cantilevers measuring several microns with tetrahedral tips on their ends are fabricated with high uniformity. The thickness of the cantilever is chosen from 20 nm to 120 nm. Typical spring constant, resonance frequency and Q factors of the single-crystal Si cantilevers are several N/m, 1 to 10 MHz and around 10/sup 4/ in vacuum, respectively. The density of the cantilever is up to 10,000 cantilevers/mm/sup 2/. We aim to scan an area of up to a few mm/sup 2/ simultaneously with this multi-probe cantilever array.
{"title":"Fabrication of array of single-crystal Si multi probe cantilevers with several microns size for parallel operation of atomic force microscope","authors":"D. Saya, K. Fukushima, H. Toshiyoshi, G. Hashiguchi, H. Fujita, H. Kawakatsu","doi":"10.1109/MEMSYS.2001.906496","DOIUrl":"https://doi.org/10.1109/MEMSYS.2001.906496","url":null,"abstract":"For the purpose of improvement in resolution of force gradient and mass detection in atomic force microscope (AFM), we are developing cantilevers measuring from 100 nm to several microns. We succeeded in fabrication of single crystal Si cantilever with several microns size and measurement of its mechanical characteristics. Silicon-on-insulator (SOI) wafer is used for the fabrication. Fabrication is based on three anisotropic etching by KOH and two local oxidation processes of Si. Without depending on precision of lithography technique, triangular shaped cantilevers measuring several microns with tetrahedral tips on their ends are fabricated with high uniformity. The thickness of the cantilever is chosen from 20 nm to 120 nm. Typical spring constant, resonance frequency and Q factors of the single-crystal Si cantilevers are several N/m, 1 to 10 MHz and around 10/sup 4/ in vacuum, respectively. The density of the cantilever is up to 10,000 cantilevers/mm/sup 2/. We aim to scan an area of up to a few mm/sup 2/ simultaneously with this multi-probe cantilever array.","PeriodicalId":311365,"journal":{"name":"Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129840140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-01-21DOI: 10.1109/MEMSYS.2001.906494
S. Fan, C. Kim, Jong-Ah Paik, B. Dunn, P. Patterson, M. Wu
This paper reports the first successful incorporation of aerogel thin films for MEMS fabrication. We developed the photolithography procedures and various surface micromachining methods for highly porous thin films. The development is verified with micro bridges, cantilevers, and membranes made of aerogel thin films, completing the entire procedures for two aerogel thin films, silica and alumina. Also discussed will be the new opportunities that aerogel MEMS bring about.
{"title":"MEMS with thin-film aerogel","authors":"S. Fan, C. Kim, Jong-Ah Paik, B. Dunn, P. Patterson, M. Wu","doi":"10.1109/MEMSYS.2001.906494","DOIUrl":"https://doi.org/10.1109/MEMSYS.2001.906494","url":null,"abstract":"This paper reports the first successful incorporation of aerogel thin films for MEMS fabrication. We developed the photolithography procedures and various surface micromachining methods for highly porous thin films. The development is verified with micro bridges, cantilevers, and membranes made of aerogel thin films, completing the entire procedures for two aerogel thin films, silica and alumina. Also discussed will be the new opportunities that aerogel MEMS bring about.","PeriodicalId":311365,"journal":{"name":"Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132407341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-01-21DOI: 10.1109/MEMSYS.2001.906482
J. Ohara, K. Kano, Y. Takeuchi, Y. Otsuka
This paper describes an improvement of Si/SiO/sub 2/ mask etching selectivity in the new D-RIE process that we presented in MEMS 2000. This process, which repeats the conventional D-RIE (ASE process) and O/sub 2/ plasma irradiation processes alternately, can improve the aspect ratio due to the prevention of lateral etching. However, the SiO/sub 2/ mask erosion of this process was 2.7 times as high as that of the conventional D-RIE process because the SiO/sub 2/ mask is sputtered by oxygen ion in the O/sub 2/ plasma irradiation process. Therefore the highest aspect ratio:46 was restricted by mask consumption. In this study, we suppressed the SiO/sub 2/ mask consumption. This suppression improves etching selectivity and increases the highest aspect ratio up to 60. Furthermore, the required process time is reduced to 2/3 of the prior result.
{"title":"Improvement of Si/SiO/sub 2/ mask etching selectivity in the new D-RIE process","authors":"J. Ohara, K. Kano, Y. Takeuchi, Y. Otsuka","doi":"10.1109/MEMSYS.2001.906482","DOIUrl":"https://doi.org/10.1109/MEMSYS.2001.906482","url":null,"abstract":"This paper describes an improvement of Si/SiO/sub 2/ mask etching selectivity in the new D-RIE process that we presented in MEMS 2000. This process, which repeats the conventional D-RIE (ASE process) and O/sub 2/ plasma irradiation processes alternately, can improve the aspect ratio due to the prevention of lateral etching. However, the SiO/sub 2/ mask erosion of this process was 2.7 times as high as that of the conventional D-RIE process because the SiO/sub 2/ mask is sputtered by oxygen ion in the O/sub 2/ plasma irradiation process. Therefore the highest aspect ratio:46 was restricted by mask consumption. In this study, we suppressed the SiO/sub 2/ mask consumption. This suppression improves etching selectivity and increases the highest aspect ratio up to 60. Furthermore, the required process time is reduced to 2/3 of the prior result.","PeriodicalId":311365,"journal":{"name":"Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132798287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-01-21DOI: 10.1109/MEMSYS.2001.906483
E. Yang, D. Wiberg
This paper describes a new technique for transferring an entire wafer-level silicon membrane from one substrate to another. A 1 /spl mu/m thick silicon membrane, 100 mm in diameter, has been successfully transferred without using adhesives or polymers (i.e. wax, epoxy, or photoresist). Smaller or larger diameter membranes can also be transferred using this technique. The fabricated actuator membrane with an electrode gap of 1.50 /spl mu/m, shows a vertical deflection of 0.37 /spl mu/m at 55 V. The proposed technique has the following benefits over those previously reported: (1) No post-assembly release process (e.g. using HF) is required, and no wax, photoresist, or epoxy is used for the transfer purpose; (2) The bonded interface is completely isolated from any acid, etchant, or solvent, which ensures a clean and flat membrane surface; (3) It offers the capability of transferring wafer-level membranes over deformable actuators.
{"title":"A new wafer-level membrane transfer technique for MEMS deformable mirrors","authors":"E. Yang, D. Wiberg","doi":"10.1109/MEMSYS.2001.906483","DOIUrl":"https://doi.org/10.1109/MEMSYS.2001.906483","url":null,"abstract":"This paper describes a new technique for transferring an entire wafer-level silicon membrane from one substrate to another. A 1 /spl mu/m thick silicon membrane, 100 mm in diameter, has been successfully transferred without using adhesives or polymers (i.e. wax, epoxy, or photoresist). Smaller or larger diameter membranes can also be transferred using this technique. The fabricated actuator membrane with an electrode gap of 1.50 /spl mu/m, shows a vertical deflection of 0.37 /spl mu/m at 55 V. The proposed technique has the following benefits over those previously reported: (1) No post-assembly release process (e.g. using HF) is required, and no wax, photoresist, or epoxy is used for the transfer purpose; (2) The bonded interface is completely isolated from any acid, etchant, or solvent, which ensures a clean and flat membrane surface; (3) It offers the capability of transferring wafer-level membranes over deformable actuators.","PeriodicalId":311365,"journal":{"name":"Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090)","volume":"124 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132577225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-01-21DOI: 10.1109/MEMSYS.2001.906589
J. Zahn, A. Deshmukh, A. Pisano, D. Liepmann
Microneedles are promising microfabricated devices for minimally invasive drug delivery applications. Microneedles can be integrated into a variety of devices. However, any portable drug delivery device with integrated microneedles will need an equally compact means to deliver the therapeutics. This work presents microneedles integrated with an on-chip MEMS positive displacement micropump for continuous drug delivery applications. The generation and collapse of thermally generated bubbles with flow rectified by directional check valves are used to achieve net pumping. Visualization methods have observed net flow rates of water out of a microneedle at approximately 1.0 nl/s with a pressure of 3.9 kPa. In addition, continuous pumping was achieved for more than 6 hours. The heaters operated for over 18 hours (15,000 cycles) without failing.
{"title":"Continuous on-chip micropumping through a microneedle","authors":"J. Zahn, A. Deshmukh, A. Pisano, D. Liepmann","doi":"10.1109/MEMSYS.2001.906589","DOIUrl":"https://doi.org/10.1109/MEMSYS.2001.906589","url":null,"abstract":"Microneedles are promising microfabricated devices for minimally invasive drug delivery applications. Microneedles can be integrated into a variety of devices. However, any portable drug delivery device with integrated microneedles will need an equally compact means to deliver the therapeutics. This work presents microneedles integrated with an on-chip MEMS positive displacement micropump for continuous drug delivery applications. The generation and collapse of thermally generated bubbles with flow rectified by directional check valves are used to achieve net pumping. Visualization methods have observed net flow rates of water out of a microneedle at approximately 1.0 nl/s with a pressure of 3.9 kPa. In addition, continuous pumping was achieved for more than 6 hours. The heaters operated for over 18 hours (15,000 cycles) without failing.","PeriodicalId":311365,"journal":{"name":"Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090)","volume":"54 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131923181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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