Pub Date : 2001-01-21DOI: 10.1109/MEMSYS.2001.906525
S. Kondo, Shoji Yoshimura, N. Saito, K. Tanioka, M. Esashi
This paper describes a stacked (multilayered) piezoelectric (PE) actuator in which both small and large displacements can be generated with a high degree of accuracy. This operation is achieved by driving the individual layers of the multilayered PE actuator. Such multilayered actuators are sandwich-structured, with a thin, (/spl sim/50 /spl mu/m) electrode layer between each pair of thin (/spl sim/100 /spl mu/m) PE-ceramic layers, so driving an individual layer of the stacked PE actuator was difficult. This difficulty was overcome by using polyamide deposition and a YAG-laser process so that each layer had an individual connection to the power supply. Each layer of the present multilayered PE actuator is thus driven by a corresponding pair of electrodes, and each pair of electrodes can be individually controlled.
{"title":"Precise control of small displacements of a stacked piezoelectric actuator by means of layer-by-layer driving","authors":"S. Kondo, Shoji Yoshimura, N. Saito, K. Tanioka, M. Esashi","doi":"10.1109/MEMSYS.2001.906525","DOIUrl":"https://doi.org/10.1109/MEMSYS.2001.906525","url":null,"abstract":"This paper describes a stacked (multilayered) piezoelectric (PE) actuator in which both small and large displacements can be generated with a high degree of accuracy. This operation is achieved by driving the individual layers of the multilayered PE actuator. Such multilayered actuators are sandwich-structured, with a thin, (/spl sim/50 /spl mu/m) electrode layer between each pair of thin (/spl sim/100 /spl mu/m) PE-ceramic layers, so driving an individual layer of the stacked PE actuator was difficult. This difficulty was overcome by using polyamide deposition and a YAG-laser process so that each layer had an individual connection to the power supply. Each layer of the present multilayered PE actuator is thus driven by a corresponding pair of electrodes, and each pair of electrodes can be individually controlled.","PeriodicalId":311365,"journal":{"name":"Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090)","volume":"27 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116520059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-01-21DOI: 10.1109/MEMSYS.2001.906608
M. Gel, I. Shimoyama
A micro actuating structure with an out-of-plane erected body is designed, fabricated and tested. Different from the traditional micro actuators, which are located on substrate surface, this new actuation mechanism is capable of producing linear motion at a point far from substrate. This unique advantage brings the possibility of driving other 3-D structures for on or out-of-wafer applications like optical alignment or precise manipulation. The unique design of the planar structure fabricated by surface micromachining is making use of elastic polyimide joints to bring a movable large silicon plate in front of an other plate to form a parallel plate capacitor. The area of the capacitive plate is 430 microns/spl times/330 microns where the height of the structure is about 1 mm. A 2-D simplified mechanical model of the structure is build and used to estimate the mechanical behavior of the structure by using a commercial finite element analysis program.
{"title":"High aspect ratio micro actuation mechanism","authors":"M. Gel, I. Shimoyama","doi":"10.1109/MEMSYS.2001.906608","DOIUrl":"https://doi.org/10.1109/MEMSYS.2001.906608","url":null,"abstract":"A micro actuating structure with an out-of-plane erected body is designed, fabricated and tested. Different from the traditional micro actuators, which are located on substrate surface, this new actuation mechanism is capable of producing linear motion at a point far from substrate. This unique advantage brings the possibility of driving other 3-D structures for on or out-of-wafer applications like optical alignment or precise manipulation. The unique design of the planar structure fabricated by surface micromachining is making use of elastic polyimide joints to bring a movable large silicon plate in front of an other plate to form a parallel plate capacitor. The area of the capacitive plate is 430 microns/spl times/330 microns where the height of the structure is about 1 mm. A 2-D simplified mechanical model of the structure is build and used to estimate the mechanical behavior of the structure by using a commercial finite element analysis program.","PeriodicalId":311365,"journal":{"name":"Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132417769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-01-21DOI: 10.1109/MEMSYS.2001.906604
D. Sabuncuoglu Tezcan, S. Eminoglu, O. Sevket Akar, T. Akin
This paper reports a low-cost, 256-pixel uncooled infrared microbolometer focal plane array (FPA) implemented using a 0.8 /spl mu/m CMOS process where the n-well layer is used as the active microbolometer material. The suspended n-well structure is obtained by simple front-end bulk etching of the fabricated CMOS dies, while the n-well region is protected from etching by electrochemical etch-stop technique within a TMAH solution. Electrical connections to the suspended n-well are obtained with polysilicon interconnect layer instead of aluminum to increase the thermal isolation of the pixel by an order of magnitude. Since polysilicon has very low TCR and high resistance, the effective TCR of the pixel is reduced to 0.34%/K, even though the n-well TCR is measured to be 0.58%/K. A 16/spl times/16 pixel array prototype with 80 /spl mu/m/spl times/80 /spl mu/m pixel sizes has successfully been implemented. The pixel resistance measurements show that pixels are very uniform with a nonuniformity of 1.23%. Measurements and calculations show that the detector and the array provide a responsivity of 1200 V/W, a detectivity of 2.2/spl times/10/sup 8/ cm/Hz/sup 1/2//W, and a noise equivalent temperature difference (NETD) of 200 mK at 0.5 Hz frame rate with fully serial readout scheme. This performance can be further increased by using other advanced readout techniques, therefore, the CMOS n-well microbolometer approach seems to be a very cost-effective method to produce large focal plane arrays for low-cost infrared imaging applications.
{"title":"A low cost uncooled infrared microbolometer focal plane array using the CMOS n-well layer","authors":"D. Sabuncuoglu Tezcan, S. Eminoglu, O. Sevket Akar, T. Akin","doi":"10.1109/MEMSYS.2001.906604","DOIUrl":"https://doi.org/10.1109/MEMSYS.2001.906604","url":null,"abstract":"This paper reports a low-cost, 256-pixel uncooled infrared microbolometer focal plane array (FPA) implemented using a 0.8 /spl mu/m CMOS process where the n-well layer is used as the active microbolometer material. The suspended n-well structure is obtained by simple front-end bulk etching of the fabricated CMOS dies, while the n-well region is protected from etching by electrochemical etch-stop technique within a TMAH solution. Electrical connections to the suspended n-well are obtained with polysilicon interconnect layer instead of aluminum to increase the thermal isolation of the pixel by an order of magnitude. Since polysilicon has very low TCR and high resistance, the effective TCR of the pixel is reduced to 0.34%/K, even though the n-well TCR is measured to be 0.58%/K. A 16/spl times/16 pixel array prototype with 80 /spl mu/m/spl times/80 /spl mu/m pixel sizes has successfully been implemented. The pixel resistance measurements show that pixels are very uniform with a nonuniformity of 1.23%. Measurements and calculations show that the detector and the array provide a responsivity of 1200 V/W, a detectivity of 2.2/spl times/10/sup 8/ cm/Hz/sup 1/2//W, and a noise equivalent temperature difference (NETD) of 200 mK at 0.5 Hz frame rate with fully serial readout scheme. This performance can be further increased by using other advanced readout techniques, therefore, the CMOS n-well microbolometer approach seems to be a very cost-effective method to produce large focal plane arrays for low-cost infrared imaging applications.","PeriodicalId":311365,"journal":{"name":"Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116636310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-01-21DOI: 10.1109/MEMSYS.2001.906536
K. Kakushima, M. Mita, D. Kobayashi, G. Hashiguchi, J. Endo, Y. Wada, H. Fujita
This paper describes the fabrication and actuation of a novel device composed of twin nano probes. The size of the probes are 200 nm-high, 280 nm-wide and 5 /spl mu/m-long, which are formed by silicon anisotropic etching. The initial gap of about 400 nm between the probes become 84 nm when 101 mW input power was given to the thermal expansion micro actuators integrated with the probes. Precise motion down to 4 nm/mW was confirmed by simultaneous TEM observation.
{"title":"Micromachined tools for nano technology. Twin nano-probes and nano-scale gap control by integrated microactuators","authors":"K. Kakushima, M. Mita, D. Kobayashi, G. Hashiguchi, J. Endo, Y. Wada, H. Fujita","doi":"10.1109/MEMSYS.2001.906536","DOIUrl":"https://doi.org/10.1109/MEMSYS.2001.906536","url":null,"abstract":"This paper describes the fabrication and actuation of a novel device composed of twin nano probes. The size of the probes are 200 nm-high, 280 nm-wide and 5 /spl mu/m-long, which are formed by silicon anisotropic etching. The initial gap of about 400 nm between the probes become 84 nm when 101 mW input power was given to the thermal expansion micro actuators integrated with the probes. Precise motion down to 4 nm/mW was confirmed by simultaneous TEM observation.","PeriodicalId":311365,"journal":{"name":"Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131259239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-01-21DOI: 10.1109/MEMSYS.2001.906526
M. Kurosawa, H. Itoh, K. Asai, M. Takasaki, T. Higuchi
An extremely large output force surface acoustic wave (SAW) motor is reported. Driving frequency of the SAW device was 9.6 MHz. Sliders were fabricated with silicon surface machining. For the contact surface, the slider had a lot of projections to control elastic contact condition. Twenty five different projection designs were tested. Using a 4/spl times/4 mm/sup 2/ silicon surface micro fabricated slider, the maximum output force was 7.6 N. Namely, it was about 0.5 N/mm/sup 2/ or 50 N/cm/sup 2/. The no-loaded speed of the motor was 0.7 m/sec in the experiment. Estimated mechanical output power of the actuator was 1 W. The mechanical output force and output power are the best of all in MEMS actuators.
{"title":"Optimization of slider contact face geometry for surface acoustic wave motor","authors":"M. Kurosawa, H. Itoh, K. Asai, M. Takasaki, T. Higuchi","doi":"10.1109/MEMSYS.2001.906526","DOIUrl":"https://doi.org/10.1109/MEMSYS.2001.906526","url":null,"abstract":"An extremely large output force surface acoustic wave (SAW) motor is reported. Driving frequency of the SAW device was 9.6 MHz. Sliders were fabricated with silicon surface machining. For the contact surface, the slider had a lot of projections to control elastic contact condition. Twenty five different projection designs were tested. Using a 4/spl times/4 mm/sup 2/ silicon surface micro fabricated slider, the maximum output force was 7.6 N. Namely, it was about 0.5 N/mm/sup 2/ or 50 N/cm/sup 2/. The no-loaded speed of the motor was 0.7 m/sec in the experiment. Estimated mechanical output power of the actuator was 1 W. The mechanical output force and output power are the best of all in MEMS actuators.","PeriodicalId":311365,"journal":{"name":"Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134458215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-01-21DOI: 10.1109/MEMSYS.2001.906520
Reza Navid, John R Clark, Mustafa Demirci, Clark T, C. Nguyen
The mechanism behind third order intermodulation distortion (IM/sub 3/) in capacitively driven clamped-clamped beam micromechanical ("CC-beam /spl mu/mechanical") resonators is shown to arise mainly from nonlinear interactions between applied off-resonance electrical signals and the mechanical displacements they induce. Analytical formulations for the third-order input intercept point (IIP/sub 3/) are then presented, first with simplifications that allow a closed form expression, then with additional complexities to account for second-order effects, such as beam bending due to an applied dc-bias voltage. Using this analytical formulation, predicted voltage IIP/sub 3/'s of 1.8 V and 6.5 V for 9.2 MHz and 17.4 MHz /spl mu/mechanical resonators, respectively, closely match measured values of 1.8 V and 6.3 V. Extensive data on the dependence of IIP/sub 3/ on dc-bias voltage, resonator Q, and resonator center frequency, are also included to lend further insight into the trade-offs involved when designing for a specific linearity requirement.
{"title":"Third-order intermodulation distortion in capacitively-driven CC-beam micromechanical resonators","authors":"Reza Navid, John R Clark, Mustafa Demirci, Clark T, C. Nguyen","doi":"10.1109/MEMSYS.2001.906520","DOIUrl":"https://doi.org/10.1109/MEMSYS.2001.906520","url":null,"abstract":"The mechanism behind third order intermodulation distortion (IM/sub 3/) in capacitively driven clamped-clamped beam micromechanical (\"CC-beam /spl mu/mechanical\") resonators is shown to arise mainly from nonlinear interactions between applied off-resonance electrical signals and the mechanical displacements they induce. Analytical formulations for the third-order input intercept point (IIP/sub 3/) are then presented, first with simplifications that allow a closed form expression, then with additional complexities to account for second-order effects, such as beam bending due to an applied dc-bias voltage. Using this analytical formulation, predicted voltage IIP/sub 3/'s of 1.8 V and 6.5 V for 9.2 MHz and 17.4 MHz /spl mu/mechanical resonators, respectively, closely match measured values of 1.8 V and 6.3 V. Extensive data on the dependence of IIP/sub 3/ on dc-bias voltage, resonator Q, and resonator center frequency, are also included to lend further insight into the trade-offs involved when designing for a specific linearity requirement.","PeriodicalId":311365,"journal":{"name":"Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131701689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-01-21DOI: 10.1109/MEMSYS.2001.906500
M. Ehmann, P. Ruther, M. von Arx, H. Baltes, O. Paul
We report the operation of micro test structures at temperatures up to 1200 K. The structures realized by a standard CMOS process consist of dielectric membranes which are heated resistively by an integrated, degenerately n-doped polysilicon heater. The heater itself serves as temperature monitor and as object of interest to characterize the ageing behavior of polysilicon. The structures are cycled thermally to temperatures up to 1200 K by increasing the electrical heating power stepwise to 124 mW. Depending on the cooling rate of the thermal cycles, the resistance of the heater can reversibly be changed between +33% (cooling rate 0.02 K/s) and -17% (cooling rate 12.1 K/s) of its initial value. During the constant power steps of the heating/cooling cycles exponential resistance changes vs. time with time constants in the range of seconds to a few minutes are observed.
{"title":"Ageing behavior of polysilicon heaters for CMOS microstructures operated at temperatures up to 1200 K","authors":"M. Ehmann, P. Ruther, M. von Arx, H. Baltes, O. Paul","doi":"10.1109/MEMSYS.2001.906500","DOIUrl":"https://doi.org/10.1109/MEMSYS.2001.906500","url":null,"abstract":"We report the operation of micro test structures at temperatures up to 1200 K. The structures realized by a standard CMOS process consist of dielectric membranes which are heated resistively by an integrated, degenerately n-doped polysilicon heater. The heater itself serves as temperature monitor and as object of interest to characterize the ageing behavior of polysilicon. The structures are cycled thermally to temperatures up to 1200 K by increasing the electrical heating power stepwise to 124 mW. Depending on the cooling rate of the thermal cycles, the resistance of the heater can reversibly be changed between +33% (cooling rate 0.02 K/s) and -17% (cooling rate 12.1 K/s) of its initial value. During the constant power steps of the heating/cooling cycles exponential resistance changes vs. time with time constants in the range of seconds to a few minutes are observed.","PeriodicalId":311365,"journal":{"name":"Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127643740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-01-21DOI: 10.1109/MEMSYS.2001.906492
K. Walsh, J. Norville, Y. Tai
We report here a detailed study of sacrificial layer dissolution of photoresist by acetone in microchannels. The effects of channel geometry as well as photoresist characteristics such as thermal cycles and UV exposure are considered and tested. Test channels were designed and fabricated ranging in height from 2 /spl mu/m to 6 /spl mu/m, widths from 10 /spl mu/m to 80 /spl mu/m, and lengths up to 2 mm. Channels were formed by encapsulating a sacrificial photoresist layer between two layers of parylene. Sacrificial layer dissolution in acetone was monitored using time lapse digital photography through a microscope and the captured data plotted and analyzed. The data support a diffusion limited model for photoresist dissolution in acetone. Individual parameters in the diffusion limited model are tested and validated through a number of controlled experiments. These results and the final model are important for the design and fabrication of micro-fluidic systems based on the parylene-photoresist sacrificial system.
{"title":"Photoresist as a sacrificial layer by dissolution in acetone","authors":"K. Walsh, J. Norville, Y. Tai","doi":"10.1109/MEMSYS.2001.906492","DOIUrl":"https://doi.org/10.1109/MEMSYS.2001.906492","url":null,"abstract":"We report here a detailed study of sacrificial layer dissolution of photoresist by acetone in microchannels. The effects of channel geometry as well as photoresist characteristics such as thermal cycles and UV exposure are considered and tested. Test channels were designed and fabricated ranging in height from 2 /spl mu/m to 6 /spl mu/m, widths from 10 /spl mu/m to 80 /spl mu/m, and lengths up to 2 mm. Channels were formed by encapsulating a sacrificial photoresist layer between two layers of parylene. Sacrificial layer dissolution in acetone was monitored using time lapse digital photography through a microscope and the captured data plotted and analyzed. The data support a diffusion limited model for photoresist dissolution in acetone. Individual parameters in the diffusion limited model are tested and validated through a number of controlled experiments. These results and the final model are important for the design and fabrication of micro-fluidic systems based on the parylene-photoresist sacrificial system.","PeriodicalId":311365,"journal":{"name":"Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129144102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-01-21DOI: 10.1109/MEMSYS.2001.906499
N. Watanabe, M. Suda, K. Furuta, T. Sakuhara
We have investigated two kinds of electrochemical processes that scan a processing electrode to fabricate metal micro parts. They are, electroforming on the mold made by electrochemical processing, and shape forming by electrochemical processing after electroplating. An electroformed Ni gear with diameter of 600 /spl square/m and thickness of 100 /spl square/m was fabricated by the former method, and a Ni gear with diameter of 1700 /spl square/m and thickness of 30 /spl square/m was fabricated by the latter method.
{"title":"Fabrication of micro parts using only electrochemical process","authors":"N. Watanabe, M. Suda, K. Furuta, T. Sakuhara","doi":"10.1109/MEMSYS.2001.906499","DOIUrl":"https://doi.org/10.1109/MEMSYS.2001.906499","url":null,"abstract":"We have investigated two kinds of electrochemical processes that scan a processing electrode to fabricate metal micro parts. They are, electroforming on the mold made by electrochemical processing, and shape forming by electrochemical processing after electroplating. An electroformed Ni gear with diameter of 600 /spl square/m and thickness of 100 /spl square/m was fabricated by the former method, and a Ni gear with diameter of 1700 /spl square/m and thickness of 30 /spl square/m was fabricated by the latter method.","PeriodicalId":311365,"journal":{"name":"Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128634135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-01-21DOI: 10.1109/MEMSYS.2001.906544
H. Nguyen, John G. D. Su, H. Toshiyoshi, M. Wu
We report on a substantially improved process for which an array of optical MEMS devices (MOEMS) are batch transferred onto a quartz wafer such that through wafer beam scanning can be achieved. MEMS optical scanners are successfully fabricated, transferred, and actuated for out-of-plane beam steering. DC transfer curves of control devices on silicon and those transferred on quartz exhibit similar pull in voltages of 135 V and 142 V respectively. Similarly, resonance for control device peaked at 1.1 kHz while transferred devices exhibit higher resonance at 1.2 kHz.
{"title":"Device transplant of optical MEMS for out of plane beam steering","authors":"H. Nguyen, John G. D. Su, H. Toshiyoshi, M. Wu","doi":"10.1109/MEMSYS.2001.906544","DOIUrl":"https://doi.org/10.1109/MEMSYS.2001.906544","url":null,"abstract":"We report on a substantially improved process for which an array of optical MEMS devices (MOEMS) are batch transferred onto a quartz wafer such that through wafer beam scanning can be achieved. MEMS optical scanners are successfully fabricated, transferred, and actuated for out-of-plane beam steering. DC transfer curves of control devices on silicon and those transferred on quartz exhibit similar pull in voltages of 135 V and 142 V respectively. Similarly, resonance for control device peaked at 1.1 kHz while transferred devices exhibit higher resonance at 1.2 kHz.","PeriodicalId":311365,"journal":{"name":"Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114381241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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